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Validating Mean Field Theory in a New Complex, Disordered High-Entropy Spinel Oxide
Authors:
Neha Sharma,
Nikita Sharma,
Jyoti Sharma,
S. D. Kaushik,
Sanjoy Kr. Mahatha,
Tirthankar Chakraborty,
Sourav Marik
Abstract:
The advent of novel high-entropy oxides has sparked substantial research interest due to their exceptional functional properties, which often surpass the mere sum of their constituent elements' characteristics. This study introduces a complex high-entropy spinel oxide with composition (Ni$_{0.2}$Mg$_{0.2}$Co$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)(Mn$_{0.66}$Fe$_{0.66}$Cr$_{0.66}$)O$_{4}$. We performed compr…
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The advent of novel high-entropy oxides has sparked substantial research interest due to their exceptional functional properties, which often surpass the mere sum of their constituent elements' characteristics. This study introduces a complex high-entropy spinel oxide with composition (Ni$_{0.2}$Mg$_{0.2}$Co$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)(Mn$_{0.66}$Fe$_{0.66}$Cr$_{0.66}$)O$_{4}$. We performed comprehensive structural (X-ray and Neutron diffraction), microstructural, magnetic, and local electronic structure investigations on this material. Despite the material's high degree of disorder, detailed magnetization measurements and low temperature neutron powder diffraction studies reveal long-range ferrimagnetic ordering beginning at 293 K. The sample exhibits a high saturation magnetization of 766 emu-cm${^3}$ (at 50 K), a low coercivity (H$_C$) of 100 Oe (50 K), a high transition temperature (T$_C$) around room temperature, and high resistivity value of 4000 Ohm-cm at room temperature, indicating its potential for high density memory devices. The magnetic structure is determined using a collinear-type ferrimagnetic model with a propagation vector k = 0,0,0. Various analytical techniques, including modified Arrott plots, Kouvel-Fischer analysis, and critical isotherm analysis, are employed to investigate the phase transitions and magnetic properties of this complex system. Our results indicate a second-order phase transition. Remarkably, despite the complex structure and significant disorder, the critical exponents obtained are consistent with the mean field model. The high entropy leads to a remarkably homogeneous distribution of multiple cations, validating the approximation of average local magnetic environments and supporting the mean field theory.
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Submitted 29 July, 2024;
originally announced July 2024.
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Structural, magnetic and x-ray absorption spectroscopy studies of new Cr-based low, medium and high-entropy spinel oxides
Authors:
Sushanta Mandal,
Jyoti Sharma,
Tirthankar Chakraborty,
Sanjoy Kr. Mahatha,
Sourav Marik
Abstract:
The emergence of high-entropy oxides has spurred significant research interest in recent times. These compounds exhibit exotic functional properties that often transcend simple linear combinations of their constituent elements. Herein, we present a new series of Cr-based low, medium, and high entropy spinel oxides with composition NiCr2O4, [Ni0.5Mn0.5]Cr2O4, [Ni0.33Mn0.33Co0.33]Cr2O4, [Ni0.25Mn0.2…
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The emergence of high-entropy oxides has spurred significant research interest in recent times. These compounds exhibit exotic functional properties that often transcend simple linear combinations of their constituent elements. Herein, we present a new series of Cr-based low, medium, and high entropy spinel oxides with composition NiCr2O4, [Ni0.5Mn0.5]Cr2O4, [Ni0.33Mn0.33Co0.33]Cr2O4, [Ni0.25Mn0.25Co0.25Cu0.25]Cr2O4, [Ni0.2Mn0.2Co0.2Cu0.2Zn0.2]Cr2O4, and [Ni0.2Mg0.2Co0.2Cu0.2Zn0.2]Cr2O4. We conducted detailed structural (X-ray and Neutron diffraction), microstructural, Raman spectroscopy, magnetic, and X-ray absorption spectroscopy measurements on these materials. Our study reveals that the incorporation of multiple cations at the A-site of the structure (AB2O4) significantly modulates the magnetic properties. These compounds exhibit transitions from complex ferrimagnetic ([Ni0.2Mn0.2Co0.2Cu0.2Zn0.2]Cr2O4) to antiferromagnetic ([Ni0.2Mg0.2Co0.2Cu0.2Zn0.2]Cr2O4) states, with remarkable coercivity variations, demonstrating the ability to tailor magnetic responses through compositional design.
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Submitted 10 June, 2024;
originally announced June 2024.
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Unraveling electronic structure of GeS through ARPES and its correlation with anisotropic optical and transport behavior
Authors:
Rahul Paramanik,
Tanima Kundu,
Soumik Das,
Alexey Barinov,
Bikash Das,
Sujan Maity,
Mainak Palit,
Sanjoy Kr Mahatha,
Subhadeep Datta
Abstract:
Two-dimensional (2D) van der Waals (vdW) materials with lower symmetry (triclinic, monoclinic or orthorhombic) exhibit intrinsic anisotropic in-plane structure desirable for future optoelectronic surface operating devices. Herein, we report one such material, 2D $p$-type semiconductor germanium sulfide (GeS), a group IV monochalcogenide with puckered orthorhombic morphology, in which in-plane opti…
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Two-dimensional (2D) van der Waals (vdW) materials with lower symmetry (triclinic, monoclinic or orthorhombic) exhibit intrinsic anisotropic in-plane structure desirable for future optoelectronic surface operating devices. Herein, we report one such material, 2D $p$-type semiconductor germanium sulfide (GeS), a group IV monochalcogenide with puckered orthorhombic morphology, in which in-plane optical and transport properties can be correlated with its electronic structure. We systematically investigate the electronic band structure of the bulk GeS with micro-focused angle-resolved photoemission spectroscopy ($μ$-ARPES) and correspond the charge transport properties using the field-effect transistor (FET) device architecture, and optical anisotropy $via$ angle-resolved polarization dependent Raman spectroscopy (ARPRS) on a micron-sized rectangle-shaped exfoliated bulk flake. The experimental valence band dispersion along the two high symmetry directions indicate highly anisotropic in-plane behavior of the charge carrier that agrees well with the density functional theory (DFT) calculations. In addition, we demonstrate the variation of the in-plane hole mobility (ratio $\sim$ 3.4) from the electrical conductivity with gate-sweep in a GeS-on-SiO$_2$ FET. Moreover, we use the angle-resolved fluctuation of the Raman intensity of the characteristic phonon modes to precisely determine the armchair and zigzag edges of the particular flake. The unique structural motif of GeS with correlated electronic and optical properties are of great interest both for the physical understanding of the all-optical switch and their applications in memory devices.
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Submitted 23 May, 2024;
originally announced May 2024.
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A compact approach to higher-resolution resonant inelastic X-ray scattering detection using photoelectrons
Authors:
Jan O. Schunck,
Jens Buck,
Robin Y. Engel,
Simon R. Kruse,
Simon Marotzke,
Markus Scholz,
Sanjoy K. Mahatha,
Meng-Jie Huang,
Henrik M. Rønnow,
Georgi Dakovski,
Moritz Hoesch,
Matthias Kalläne,
Kai Rossnagel,
Martin Beye
Abstract:
The detection of inelastically scattered soft X-rays with high energy resolution usually requires large grating spectrometers. Recently, photoelectron spectrometry for analysis of X-rays (PAX) has been rediscovered for modern spectroscopy experiments at synchrotron light sources. By converting scattered photons to electrons and using an electron energy analyser, the energy resolution for resonant…
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The detection of inelastically scattered soft X-rays with high energy resolution usually requires large grating spectrometers. Recently, photoelectron spectrometry for analysis of X-rays (PAX) has been rediscovered for modern spectroscopy experiments at synchrotron light sources. By converting scattered photons to electrons and using an electron energy analyser, the energy resolution for resonant inelastic X-ray scattering (RIXS) becomes decoupled from the X-ray spot size and instrument length. In this work, we develop PAX towards high energy resolution using a modern photoemission spectroscopy setup studying Ba2Cu3O4Cl2 at the Cu L3-edge. We measure a momentum transfer range of 24% of the first Brillouin zone simultaneously. Our results hint at the observation of a magnon excitation below 100 meV energy transfer and show intensity variations related to the dispersion of dd-excitations. With dedicated setups, PAX can become an alternative to the best and largest RIXS instruments, while at the same time opening new opportunities to acquire RIXS at a range of momentum transfers simultaneously and combine it with angle-resolved photoemission spectroscopy in a single instrument.
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Submitted 12 March, 2024;
originally announced March 2024.
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Self-stacked 1$\mathrm{T}$-1$\mathrm{H}$ layers in 6$\mathrm{R}$-NbSeTe and the emergence of charge and magnetic correlations due to ligand disorder
Authors:
S. K. Mahatha,
J. Phillips,
J. Corral-Sertal,
D. Subires,
A. Korshsunov,
A. Kar,
J. Buck,
F. Diekmann,
Y. P. Ivanov,
A. Chuvilin,
D. Mondal,
I. Vobornik,
A. Bosak,
K. Rossnagel,
V. Pardo,
Adolfo O. Fumega,
S. Blanco-Canosa
Abstract:
The emergence of correlated phenomena arising from the combination of 1$\mathrm{T}$ and 1$\mathrm{H}$ van der Waals layers is the focus of intense research. Here, we synthesize a novel self-stacked 6$\mathrm{R}$ phase in NbSeTe, showing a perfect alternating 1T and 1H layers that grow coherently along the c-direction, as revealed by scanning transmission electron microscopy. Angle resolved photoem…
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The emergence of correlated phenomena arising from the combination of 1$\mathrm{T}$ and 1$\mathrm{H}$ van der Waals layers is the focus of intense research. Here, we synthesize a novel self-stacked 6$\mathrm{R}$ phase in NbSeTe, showing a perfect alternating 1T and 1H layers that grow coherently along the c-direction, as revealed by scanning transmission electron microscopy. Angle resolved photoemission spectroscopy shows a mixed contribution of the trigonal and octahedral Nb bands to the Fermi level. Diffuse scattering reveals temperature-independent short-range charge fluctuations with propagation vector $\mathrm{q_{CO}}$=(0.25,0), derived from the condensation of a longitudinal mode in the 1T layer. We observe that ligand disorder quenches the formation of a charge density wave. Magnetization measurements suggest the presence of an inhomogeneous, short-range magnetic order, further supported by the absence of a clear phase transition in the specific heat. These experimental analyses in combination with \textit{ab initio} calculations indicate that the ground state of 6$\mathrm{R}$-NbSeTe is described by a statistical distribution of short-range charge-modulated and spin-correlated regions driven by ligand disorder. Our results devise a route to synthesize 1$\mathrm{T}$-1$\mathrm{H}$ self-stacked bulk heterostructures to study emergent phases of matter.
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Submitted 12 February, 2024;
originally announced February 2024.
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Isostructural phase transition in Tb2Ti2O7 under pressure and temperature: Insights from synchrotron X-ray diffraction
Authors:
Subrata Das,
Sanjoy Kr Mahatha,
Konstantin Glazyrin,
R Ganesan,
Suja Elizabeth,
Tirthankar Chakraborty
Abstract:
Tb2Ti2O7, a pyrochlore system, has garnered significant interest due to its intriguing structural and physical properties and their dependence on external physical parameters. In this study, utilizing high-brilliance synchrotron X-ray diffraction, we conducted a comprehensive investigation of structural evolution of Tb2Ti2O7 under external pressure and temperature. We have conclusively confirmed t…
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Tb2Ti2O7, a pyrochlore system, has garnered significant interest due to its intriguing structural and physical properties and their dependence on external physical parameters. In this study, utilizing high-brilliance synchrotron X-ray diffraction, we conducted a comprehensive investigation of structural evolution of Tb2Ti2O7 under external pressure and temperature. We have conclusively confirmed the occurrence of an isostructural phase transition beyond the pressure of 10 GPa. The transition exhibits a distinct signature in the variation of lattice parameters under pressure and leads to changes in mechanical properties. The underlying physics driving this transition can be understood in terms of localized rearrangement of atoms while retaining the overall cubic symmetry of the crystal. Notably, the observed transition remains almost independent of temperature. Our findings provide insights into the distinctive behaviour of the isostructural phase transition in Tb2Ti2O7.
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Submitted 1 September, 2023;
originally announced September 2023.
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Electronic structure and lattice dynamics of 1T-VSe$_2$: origin of the 3D-CDW
Authors:
Josu Diego,
D. Subires,
A. H. Said,
D. A. Chaney,
A. Korshunov,
G. Garbarino,
F. Diekmann,
K. Mahatha,
V. Pardo,
J. Strempfer,
Pablo J. Bereciartua Perez,
S. Francoual,
C. Popescu,
M. Tallarida,
J. Dai,
Raffaello Bianco,
Lorenzo Monacelli,
Matteo Calandra,
A. Bosak,
Francesco Mauri,
K. Rossnagel,
Adolfo O. Fumega,
Ion Errea,
S. Blanco-Canosa
Abstract:
In order to characterize in detail the charge density wave (CDW) transition of 1$T$-VSe$_2$, its electronic structure and lattice dynamics are comprehensively studied by means of x-ray diffraction, angle resolved photoemission (ARPES), diffuse and inelastic x-ray scattering (IXS), and state-of-the-art first principles density functional theory calculations. Resonant elastic x-ray scattering (REXS)…
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In order to characterize in detail the charge density wave (CDW) transition of 1$T$-VSe$_2$, its electronic structure and lattice dynamics are comprehensively studied by means of x-ray diffraction, angle resolved photoemission (ARPES), diffuse and inelastic x-ray scattering (IXS), and state-of-the-art first principles density functional theory calculations. Resonant elastic x-ray scattering (REXS) does not show any resonant enhancement at either V or Se K-edges, indicating that the CDW peak describes a purely structural modulation of the electronic ordering. ARPES identifies (i) a pseudogap at T$>$T$_{CDW}$, which leads to a depletion of the density of states in the $ML-M'L'$ plane at T$<$T$_{CDW}$, and (ii) anomalies in the electronic dispersion reflecting a sizable impact of phonons on it. A diffuse scattering precursor, characteristic of soft phonons, is observed at room temperature (RT) and leads to the full collapse of the low-energy phonon ($ω_1$) with propagation vector (0.25 0 -0.3) r.l.u. We show that the frequency and linewidth of this mode are anisotropic in momentum space, reflecting the momentum dependence of the electron-phonon interaction (EPI), hence demonstrating that the origin of the CDW is, to a much larger extent, due to the momentum dependence EPI with a small contribution from nesting. The pressure dependence of the $ω_1$ soft mode remains nearly constant up to 13 GPa at RT, with only a modest softening before the transition to the high-pressure monoclinic $C2/m$ phase. The wide set of experimental data are well captured by our state-of-the art first-principles anharmonic calculations with the inclusion of van der Waals (vdW) corrections in the exchange-correlation functional. The description of the electronics and dynamics of VSe$_2$ reported here adds important pieces of information to the understanding of the electronic modulations of TMDs.
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Submitted 28 July, 2023;
originally announced July 2023.
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Plasmonic polarons induced by alkali-atom deposition in hafnium disulfide (1$T$-HfS$_2$)
Authors:
Christoph Emeis,
Sanjoy Kr Mahatha,
Sebastian Rohlf,
Kai Rossnagel,
Fabio Caruso
Abstract:
We combine ab-initio calculations based on many-body perturbation theory and the cumulant expansion with angle-resolved photoemission spectroscopy (ARPES) to quantify the electron-plasmon interaction in the highly-doped semiconducting transition metal dichalcogenide 1$T$-HfS$_2$. ARPES reveals the emergence of satellite spectral features in the vicinity of quasiparticle excitations at the bottom o…
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We combine ab-initio calculations based on many-body perturbation theory and the cumulant expansion with angle-resolved photoemission spectroscopy (ARPES) to quantify the electron-plasmon interaction in the highly-doped semiconducting transition metal dichalcogenide 1$T$-HfS$_2$. ARPES reveals the emergence of satellite spectral features in the vicinity of quasiparticle excitations at the bottom of the conduction band, suggesting coupling to bosonic excitations with a characteristic energy of 200 meV. Our first-principles calculations of the photoemission spectral function reveal that these features can be ascribed to electronic coupling to carrier plasmons (doping-induced collective charge-density fluctuations). We further show that reduced screening at the surface enhances the electron-plasmon interaction and is primarily responsible for the emergence of plasmonic polarons.
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Submitted 11 July, 2023;
originally announced July 2023.
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Silicene on Ag(111): an honeycomb lattice without Dirac bands
Authors:
Sanjoy Kr. Mahatha,
Paolo Moras,
Valerio Bellini,
Polina M. Sheverdyaeva,
Claudia Struzzi,
Luca Petaccia,
Carlo Carbone
Abstract:
The discovery of (4x4) silicene formation on Ag(111) raised the question on whether silicene maintains its Dirac fermion character, similar to graphene, on a supporting substrate. Previous photoemission studies indicated that the π-band forms Dirac cones near the Fermi energy, while theoretical investigations found it shifted at deeper binding energy. By means of angle-resolved photoemission spect…
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The discovery of (4x4) silicene formation on Ag(111) raised the question on whether silicene maintains its Dirac fermion character, similar to graphene, on a supporting substrate. Previous photoemission studies indicated that the π-band forms Dirac cones near the Fermi energy, while theoretical investigations found it shifted at deeper binding energy. By means of angle-resolved photoemission spectroscopy and density functional theory calculations we show instead that the π-symmetry states lose their local character and the Dirac cone fades out. The formation of an interface state of free-electron-like Ag origin is found to account for spectral features that were theoretically and experimentally attributed to silicene bands of π-character.
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Submitted 30 June, 2023;
originally announced June 2023.
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Real-time observation of phonon-electron energy and angular momentum flow in laser-heated nickel
Authors:
Vishal Shokeen,
Michael Heber,
Dmytro Kutnyakhov,
Xiaocui Wang,
Alexander Yaroslavtsev,
Pablo Maldonado,
Marco Berritta,
Nils Wind,
Lukas Wenthaus,
Federico Pressacco,
Chul-Hee Min,
Matz Nissen,
Sanjoy K. Mahatha,
Siarhei Dziarzhytski,
Peter M. Oppeneer,
Kai Rossnagel,
Hans-Joachim Elmers,
Gerd Schönhense,
Hermann A. Dürr
Abstract:
Identifying the microscopic nature of non-equilibrium energy transfer mechanisms among electronic, spin and lattice degrees of freedom is central for understanding ultrafast phenomena such as manipulating magnetism on the femtosecond timescale. Here we use time and angle-resolved photoemission spectroscopy to go beyond the often-employed ensemble-averaged view of non-equilibrium dynamics in terms…
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Identifying the microscopic nature of non-equilibrium energy transfer mechanisms among electronic, spin and lattice degrees of freedom is central for understanding ultrafast phenomena such as manipulating magnetism on the femtosecond timescale. Here we use time and angle-resolved photoemission spectroscopy to go beyond the often-employed ensemble-averaged view of non-equilibrium dynamics in terms of quasiparticle temperature evolutions. We show for ferromagnetic Ni that the non-equilibrium electron and spin dynamics display pronounced variations with electron momentum whereas the magnetic exchange interaction remains isotropic. This highlights the influence of lattice-mediated scattering processes and opens a pathway towards unraveling the still elusive microscopic mechanism of spin-lattice angular momentum transfer.
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Submitted 19 December, 2023; v1 submitted 18 June, 2023;
originally announced June 2023.
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Multiplex movie of concerted rotation of molecules on a 2D material
Authors:
Kiana Baumgärtner,
Misa Nozaki,
Marvin Reuner,
Nils Wind,
Masato Haniuda,
Christian Metzger,
Michael Heber,
Dmytro Kutnyakhov,
Federico Pressacco,
Lukas Wenthaus,
Keisuke Hara,
Chul-Hee Min,
Martin Beye,
Friedrich Reinert,
Friedrich Roth,
Sanjoy Kr Mahatha,
Anders Madsen,
Tim Wehling,
Kaori Niki,
Daria Popova-Gorelova,
Kai Rossnagel,
Markus Scholz
Abstract:
Function is dynamic and originates at atomic interfaces. Combining the degrees of freedom of molecules with the peculiar properties of 2D quantum materials can create novel functionality. Here, we report the manipulation and ultrafast imaging of a unidirectional gearing motion in molecules on a 2D quantum material. To visualize and disentangle the intertwined structural and electronic dynamics of…
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Function is dynamic and originates at atomic interfaces. Combining the degrees of freedom of molecules with the peculiar properties of 2D quantum materials can create novel functionality. Here, we report the manipulation and ultrafast imaging of a unidirectional gearing motion in molecules on a 2D quantum material. To visualize and disentangle the intertwined structural and electronic dynamics of such a hybrid interface, we record a 'full molecular movie' by imaging the atomic positions, the evolution of the molecular orbital wavefunctions and the modification of electronic states of the substrate. In a multimodal investigation in a single setup, we disentangle dynamics in valence and core electrons of both the molecule and the surface with femtosecond and sub-ångström precision. The ultrafast rotational motion is fueled by the transfer of hot holes into the molecules that results in 'supercharging' of the film. As hot carriers move through the interface, we track a transient modification of the frontier molecular orbitals and observe a chiral symmetry breaking associated with local structural rearrangements. Our calculations show that the 'supercharging' changes the interfacial potential energy landscape and triggers the gearing motion. The experiment offers all-in-one imaging of the electronic, molecular orbital, chemical and structural dynamics during the flow of charge and energy across the hybrid interface. Our approach provides detailed dynamical information on the mechanism underlying surface-adsorbed molecular gears and enables tailoring novel functionalities in hybrid active matter.
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Submitted 12 May, 2023;
originally announced May 2023.
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Tunable Electron Transport in Defect-Engineered PdSe$_\mathrm{2}$
Authors:
Tanima Kundu,
Barnik Pal,
Bikash Das,
Rahul Paramanik,
Sujan Maity,
Anudeepa Ghosh,
Mainak Palit,
Marek Kopciuszynski,
Alexei Barinov,
Sanjoy Kr Mahatha,
Subhadeep Datta
Abstract:
Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present the electric-field tunable electron and hole transport in a microchannel device consisting of highly air-stable van der Waals (vdW) noble metal dichalcogenide (NMDC), PdSe$_\mathrm{2}$, as an active layer. Pristine bulk P…
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Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present the electric-field tunable electron and hole transport in a microchannel device consisting of highly air-stable van der Waals (vdW) noble metal dichalcogenide (NMDC), PdSe$_\mathrm{2}$, as an active layer. Pristine bulk PdSe$_\mathrm{2}$ constitutes Se surface vacancy defects created during the growth or exfoliation process and offers an ambipolar transfer characteristics with a slight electron dominance recorded in field-effect transistor (FET) characteristics showing an ON/OFF ratio < 10 and electron mobility ~ 21 cm$^2$/V.s. However, transfer characteristics of PdSe$_\mathrm{2}$ can be tuned to a hole-dominated transport while using hydrochloric acid (HCl) as a $p$-type dopant. On the other hand, the chelating agent EDTA, being a strong electron donor, enhances the electron-dominance in PdSe$_\mathrm{2}$ channel. In addition, $p$-type behavior with a 100 times higher ON/OFF ratio is obtained while cooling the sample down to 10 K. Low-temperature angle-resolved photoemission spectroscopy resembles the $p$-type band structure of PdSe$_\mathrm{2}$ single crystal. Also, first principle density functional theory calculations justify the tunability observed in PdSe$_\mathrm{2}$ as a result of defect-engineering. Such a defect-sensitive ambipolar vdW architecture may open up new possibilities towards future CMOS (Complementary Metal-Oxide-Semiconductor) device fabrications and high performance integrated circuits.
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Submitted 3 July, 2023; v1 submitted 13 February, 2023;
originally announced February 2023.
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Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion
Authors:
T. K. Dalui,
B. Das,
C. K. Barman,
P. K. Ghose,
A. Sarma,
S. K. Mahatha,
F. Diekmann,
K. Rossnagel,
S. Majumdar,
A. Alam,
S. Giri
Abstract:
We propose SnBi2Te4 to be a novel candidate material exhibiting temperature (T) mediated transitions between rich topological phases. From a combined theoretical and experimental studies, we find that SnBi2Te4 goes from a low-T topological semimetallic phase to a high-T (room temperature) topological insulating phase via an intermediate topological metallic phase. Single crystals of SnBi2Te4 are c…
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We propose SnBi2Te4 to be a novel candidate material exhibiting temperature (T) mediated transitions between rich topological phases. From a combined theoretical and experimental studies, we find that SnBi2Te4 goes from a low-T topological semimetallic phase to a high-T (room temperature) topological insulating phase via an intermediate topological metallic phase. Single crystals of SnBi2Te4 are characterized by various experimental probes including Synchrotron based X-ray diffraction, magnetoresistance, Hall effect, Seebeck coefficient, magnetization and angle-resolved photoemission spectroscopy (ARPES). X-ray diffraction data confirms an anomalous thermal expansion of the unit cell volume below 100 K, which significantly affects the bulk band structure and hence the transport properties, as confirmed by our density functional theory calculations. Simulated surface states at 15 K agree fairly well with our ARPES data and are found to be robust with varying T. This indirectly supports the experimentally observed paramagnetic singularity in the entire T-range. The proposed coexistence of rich topological phases is a rare occurrence, yet paves a fertile ground to tune various topological phases in a material driven by structural distortion.
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Submitted 14 December, 2022;
originally announced December 2022.
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Fourier-based methods for removing mesh anomalies from angle resolved photoemission spectra
Authors:
Shouzheng Liu,
Erica Kotta,
Yishuai Xu,
Joshua Mutch,
Jiun-Haw Chu,
Moritz Hoesch,
Sanjoy Kr Mahatha,
Jonathan D. Denlinger,
L. Andrew Wray
Abstract:
Recent improvements to spatial resolution in angle-resolved photo-emission spectroscopy (ARPES) have made it common to perform measurements with a very brief dwell time, for the purpose of mapping the spectral function over large surface regions. However, rapid measurement modalities can suffer a grid-like intensity modulation due to a wire mesh that is typically placed in front of the ARPES detec…
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Recent improvements to spatial resolution in angle-resolved photo-emission spectroscopy (ARPES) have made it common to perform measurements with a very brief dwell time, for the purpose of mapping the spectral function over large surface regions. However, rapid measurement modalities can suffer a grid-like intensity modulation due to a wire mesh that is typically placed in front of the ARPES detector to block stray electrons. Here, we explore Fourier-based methods that can effectively remove this artifact, and improve the quality of ARPES images obtained in rapid scanning modes. An open source software package is provided containing implementations of demonstrated algorithms.
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Submitted 21 December, 2021;
originally announced December 2021.
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Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors
Authors:
P. Majchrzak,
K. Volckaert,
A. G. Cabo,
D. Biswas,
M. Bianchi,
S. K. Mahatha,
M. Dendzik,
F. Andreatta,
S. S. Grønborg,
I. Marković,
J. M. Riley,
J. C. Johannsen,
D. Lizzit,
L. Bignardi,
S. Lizzit,
C. Cacho,
O. Alexander,
D. Matselyukh,
A. S. Wyatt,
R. T. Chapman,
E. Springate,
J. V. Lauritsen,
P. D. C. King,
C. E. Sanders,
J. A. Miwa
, et al. (2 additional authors not shown)
Abstract:
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the sing…
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The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states.
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Submitted 31 March, 2021;
originally announced March 2021.
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Phonon collapse and van der Waals melting of the 3D charge density wave of VSe$_2$
Authors:
Josu Diego,
A. H. Said,
S. K. Mahatha,
Raffaello Bianco,
Lorenzo Monacelli,
Matteo Calandra,
Francesco Mauri,
K. Rossnagel,
Ion Errea,
S. Blanco-Canosa
Abstract:
Among transition metal dichalcogenides (TMDs), VSe$_2$ is considered to develop a purely 3-dimensional (3D) charge-density wave (CDW) at T$_{CDW}$=110 K. Here, by means of high resolution inelastic x-ray scattering (IXS), we show that the CDW transition is driven by the collapse of an acoustic mode at the critical wavevector \textit{q}$_{CDW}$= (2.25 0 0.7) r.l.u. and critical temperature T…
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Among transition metal dichalcogenides (TMDs), VSe$_2$ is considered to develop a purely 3-dimensional (3D) charge-density wave (CDW) at T$_{CDW}$=110 K. Here, by means of high resolution inelastic x-ray scattering (IXS), we show that the CDW transition is driven by the collapse of an acoustic mode at the critical wavevector \textit{q}$_{CDW}$= (2.25 0 0.7) r.l.u. and critical temperature T$_{CDW}$=110 K. The softening of this mode starts to be pronounced for temperatures below 2$\times$ T$_{CDW}$ and expands over a rather wide region of the Brillouin zone, suggesting a large contribution of the electron-phonon interaction to the CDW formation. This interpretation is supported by our first principles calculations that determine a large momentum-dependence of the electron-phonon interaction, peaking at the CDW wavevector, in the presence of nesting. Fully anharmonic {\it ab initio} calculations confirm the softening of one acoustic branch at \textit{q}$_{CDW}$ as responsible for the CDW formation and show that van der Waals interactions are crucial to melt the CDW. Our work also highlights the important role of out-of-plane interactions to describe 3D CDWs in TMDs.
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Submitted 16 July, 2020;
originally announced July 2020.
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Oxide Fermi liquid universality revealed by electron spectroscopy
Authors:
M. Horio,
K. P. Kramer,
Q. Wang,
A. Zaidan,
K. von Arx,
D. Sutter,
C. E. Matt,
Y. Sassa,
N. C. Plumb,
M. Shi,
A. Hanff,
S. K. Mahatha,
H. Bentmann,
F. Reinert,
S. Rohlf,
F. K. Diekmann,
J. Buck,
M. Kalläne,
K. Rossnagel,
E. Rienks,
V. Granata,
R. Fittipaldi,
A. Vecchione,
T. Ohgi,
T. Kawamata
, et al. (5 additional authors not shown)
Abstract:
We present a combined soft x-ray and high-resolution vacuum-ultraviolet angle-resolved photoemission spectroscopy study of the electron-overdoped cuprate Pr$_{1.3-x}$La$_{0.7}$Ce$_{x}$CuO$_4$ (PLCCO). Demonstration of its highly two-dimensional band structure enabled precise determination of the in-plane self-energy dominated by electron-electron scattering. Through analysis of this self-energy an…
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We present a combined soft x-ray and high-resolution vacuum-ultraviolet angle-resolved photoemission spectroscopy study of the electron-overdoped cuprate Pr$_{1.3-x}$La$_{0.7}$Ce$_{x}$CuO$_4$ (PLCCO). Demonstration of its highly two-dimensional band structure enabled precise determination of the in-plane self-energy dominated by electron-electron scattering. Through analysis of this self-energy and the Fermi-liquid cut-off energy scale, we find -- in contrast to hole-doped cuprates -- a momentum isotropic and comparatively weak electron correlation in PLCCO. Yet, the self-energies extracted from multiple oxide systems combine to demonstrate a logarithmic divergent relation between the quasiparticle scattering rate and mass. This constitutes a spectroscopic version of the Kadowaki-Woods relation with an important merit -- the demonstration of Fermi liquid quasiparticle lifetime and mass being set by a single energy scale.
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Submitted 25 December, 2020; v1 submitted 23 June, 2020;
originally announced June 2020.
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Observation and origin of the $Δ$-manifold in Si:P $δ$-layers
Authors:
Ann Julie Holt,
Sanjoy K. Mahatha,
Raluca-Maria Stan,
Frode S. Strand,
Thomas Nyborg,
Davide Curcio,
Alex Schenk,
Simon P. Cooil,
Marco Bianchi,
Justin W. Wells,
Philip Hofmann,
Jill A. Miwa
Abstract:
By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0$\,nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experi…
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By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0$\,nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the $Δ$-manifold is revealed. Moreover, the number of carriers hosted within the $Δ$-manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness.
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Submitted 19 November, 2019;
originally announced November 2019.
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Layer and orbital interference effects in photoemission from transition metal dichalcogenides
Authors:
Habib Rostami,
Klara Volckaert,
Nicola Lanata,
Sanjoy K. Mahatha,
Charlotte E. Sanders,
Marco Bianchi,
Daniel Lizzit,
Luca Bignardi,
Silvano Lizzit,
Jill A. Miwa,
Alexander V. Balatsky,
Philip Hofmann,
Søren Ulstrup
Abstract:
In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a $\vec{k} \cdot \vec{p}$ Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the…
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In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a $\vec{k} \cdot \vec{p}$ Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the $\bar{K}$-valley of MoS$_2$. In SL MoS$_2$ we find a significant masking of intensity outside the first Brillouin zone, which originates from an in-plane interference effect between photoelectrons emitted from the Mo $d$ orbitals. In BL MoS$_2$ an additional inter-layer interference effect leads to a distinctive modulation of intensity with photon energy. Finally, we use the semiconductor Bloch equations to model the optical excitation in a time- and angle-resolved pump-probe photoemission experiment. We find that the momentum dependence of an optically excited population in the conduction band leads to an observable dichroism in both SL and BL MoS$_2$.
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Submitted 4 October, 2019;
originally announced October 2019.
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Momentum-resolved linear dichroism in bilayer MoS$_2$
Authors:
Klara Volckaert,
Habib Rostami,
Deepnarayan Biswas,
Igor Marković,
Federico Andreatta,
Charlotte E. Sanders,
Paulina Majchrzak,
Cephise Cacho,
Richard T. Chapman,
Adam Wyatt,
Emma Springate,
Daniel Lizzit,
Luca Bignardi,
Silvano Lizzit,
Sanjoy K. Mahatha,
Marco Bianchi,
Nicola Lanata,
Phil D. C. King,
Jill A. Miwa,
Alexander V. Balatsky,
Philip Hofmann,
Søren Ulstrup
Abstract:
Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemissio…
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Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemission spectroscopy. We model the polarization-dependent photoemission intensity in the transiently-populated conduction band using the semiconductor Bloch equations and show that the observed dichroism emerges from intralayer single-particle effects within the isotropic part of the dispersion. This leads to optical excitations with an anisotropic momentum-dependence in an otherwise inversion symmetric material.
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Submitted 4 October, 2019;
originally announced October 2019.
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The occupied electronic structure of ultrathin boron doped diamond
Authors:
A. K. Schenk,
A. C. Pakpour-Tabrizi,
A. J. U. Holt,
S. K. Mahatha,
F. Arnold,
M. Bianchi,
R. B. Jackman,
J. A. Miwa,
Ph. Hofmann,
S. P. Cooil,
J. W. Wells,
F. Mazzola
Abstract:
Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their ph…
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Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.
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Submitted 1 July, 2019;
originally announced July 2019.
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Epitaxial single layer NbS$_{2}$ on Au(111): synthesis, structure, and electronic properties
Authors:
Raluca-Maria Stan,
Sanjoy K. Mahatha,
Marco Bianchi,
Charlotte E. Sanders,
Davide Curcio,
Philip Hofmann,
Jill A. Miwa
Abstract:
We report on the epitaxial growth of single layer NbS$_2$ on Au(111) and determine both its crystalline and electronic structure by a combination of low-energy electron diffraction, scanning tunnelling microscopy and angle-resolved photoemission spectroscopy. The layer is found to grow in the 1H structural phase with a lattice constant of (3.29$\pm$0.03)~Å, a value comparable to the bulk 2H NbS…
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We report on the epitaxial growth of single layer NbS$_2$ on Au(111) and determine both its crystalline and electronic structure by a combination of low-energy electron diffraction, scanning tunnelling microscopy and angle-resolved photoemission spectroscopy. The layer is found to grow in the 1H structural phase with a lattice constant of (3.29$\pm$0.03)~Å, a value comparable to the bulk 2H NbS$_2$ lattice constant. The photoemission data reveals a metallic band structure down to a temperature of 30~K. The observed bands are rather broad and consistent with either a strong NbS$_2$-substrate interaction or with the recently reported interplay of strong many-body effects in single layer NbS$_2$ \cite{Loon:2018aa}. No indications of a charge density wave are observed.
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Submitted 11 January, 2019;
originally announced January 2019.
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Electron-phonon coupling in single-layer MoS2
Authors:
Sanjoy K. Mahatha,
Arlette S. Ngankeu,
Nicki Frank Hinsche,
Ingrid Mertig,
Kevin Guilloy,
Peter L. Matzen,
Marco Bianchi,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Daniel Lizzit,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Philip Hofmann
Abstract:
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye mo…
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The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of $λ$ for the upper and lower spin-split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS$_2$. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS$_2$ on Au(111). The fact that the absolute valence band maximum in single-layer MoS$_2$ at K is almost degenerate with the local valence band maximum at $Γ$ can potentially be used to tune the strength of the electron-phonon interaction in this material.
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Submitted 18 November, 2018;
originally announced November 2018.
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Quasi-free-standing single-layer WS2 achieved by intercalation
Authors:
Sanjoy K. Mahatha,
Maciej Dendzik,
Charlotte E. Sanders,
Matteo Michiardi,
Marco Bianchi,
Jill A. Miwa,
Philip Hofmann
Abstract:
Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approach is that the interaction between the single-layer and the substrate can be strong enough to enforce a single crystalline orientation of the layer. On the other hand, the same interaction can lead to hybridization effec…
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Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approach is that the interaction between the single-layer and the substrate can be strong enough to enforce a single crystalline orientation of the layer. On the other hand, the same interaction can lead to hybridization effects, resulting in the deterioration of the single-layer's native properties. This dilemma can potentially be solved by decoupling the single-layer from the substrate surface after the growth via intercalation of atoms or molecules. Here we show that such a decoupling can indeed be achieved for single-layer WS2 epitaxially grown on Ag(111) by intercalation of Bi atoms. This process leads to a suppression of the single-layer WS2-Ag substrate interaction, yielding an electronic band structure reminiscent of free-standing single-layer WS2.
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Submitted 14 November, 2018;
originally announced November 2018.
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Novel single-layer vanadium sulphide phases
Authors:
Fabian Arnold,
Raluca-Maria Stan,
Sanjoy K. Mahatha,
H. E. Lund,
Davide Curcio,
Maciej Dendzik,
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Daniel Lizzit,
Zheshen Li,
Marco Bianchi,
Jill A. Miwa,
Martin Bremholm,
Silvano Lizzit,
Philip Hofmann,
C. E. Sanders
Abstract:
VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new…
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VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new two-dimensional compound that has no bulk analogue. The transition is reversible upon annealing in an H2S gas atmosphere. We report the structural properties of both the stoichiometric and S-depleted compounds on the basis of low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and scanning tunneling microscopy experiments.
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Submitted 21 March, 2018;
originally announced March 2018.
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Systematics of electronic and magnetic properties in the transition metal doped Sb$_2$Te$_3$ quantum anomalous Hall platform
Authors:
M F. Islam,
C. M. Canali,
A. Pertsova,
A. Balatsky,
S. K. Mahatha,
C. Carbone,
A. Barla,
K. A. Kokh,
O. E. Tereshchenk,
E. Jiménez,
N. B. Brookes,
P. Gargiani,
M. Valvidares,
S. Schatz,
T. R. F. Peixoto,
H. Bentmann,
F. Reinert,
J. Jung,
T. Bathon,
K. Fauth,
M. Bode,
P. Sessi
Abstract:
The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically-doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here we report on a detailed and systematic investigation of transition-metal (TM)-doped Sb$_2$Te$_3$. By combining density functional theory (…
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The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically-doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here we report on a detailed and systematic investigation of transition-metal (TM)-doped Sb$_2$Te$_3$. By combining density functional theory (DFT) calculations with complementary experimental techniques, i.e., scanning tunneling microscopy (STM), resonant photoemission (resPES), and x-ray magnetic circular dichroism (XMCD), we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM-doped TIs. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V- and Fe-doped Sb$_2$Te$_3$ display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity-dependent and can vary from in-plane to out-of-plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM-doped Sb$_2$Te$_3$ in the ferromagnetic state.
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Submitted 14 February, 2018;
originally announced February 2018.
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Hidden phase in parent Fe-pnictide superconductors
Authors:
Khadiza Ali,
Ganesh Adhikary,
Sangeeta Thakur,
Swapnil Patil,
Sanjoy K. Mahatha,
A. Thamizhavel,
Giovanni De Ninno,
Paolo Moras,
Polina M. Sheverdyaeva,
Carlo Carbone,
Luca Petaccia,
Kalobaran Maiti
Abstract:
We investigate the origin of exoticity in Fe-based systems via studying the Fermiology of CaFe2As2 employing Angle Resolved Photoemission spectroscopy (ARPES). While the Fermi surfaces (FSs) at 200 K and 31 K are observed to exhibit two dimensional (2D) and three dimensional (3D) topology, respectively, the FSs at intermediate temperatures reveal emergence of the 3D topology at much lower temperat…
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We investigate the origin of exoticity in Fe-based systems via studying the Fermiology of CaFe2As2 employing Angle Resolved Photoemission spectroscopy (ARPES). While the Fermi surfaces (FSs) at 200 K and 31 K are observed to exhibit two dimensional (2D) and three dimensional (3D) topology, respectively, the FSs at intermediate temperatures reveal emergence of the 3D topology at much lower temperature than the structural & magnetic phase transition temperature (170 K, for the sample under scrutiny). This leads to the conclusion that the evolution of FS topology is not directly driven by the structural transition. In addition, we discover the existence in ambient conditions of energy bands related to the collapsed tetragonal (cT) phase. These bands are distinctly resolved in the high-photon energy spectra exhibiting strong Fe 3d character. They gradually move to higher binding energies due to thermal compression with cooling, leading to the emergence of 3D topology in the Fermi surface. These results reveal the so-far hidden existence of a cT phase in ambient conditions, which is argued to lead to quantum fluctuations responsible for the exotic electronic properties in Fe-pnictide superconductors.
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Submitted 11 December, 2017;
originally announced December 2017.
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Electron-phonon coupling in the spin-split valence band of single layer WS$_2$
Authors:
Nicki Frank Hinsche,
Arlette S. Ngankeu,
Kevin Guilloy,
Sanjoy K. Mahatha,
Antonija Grubišić Čabo,
Marco Bianchi,
Maciej Dendzik,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Kristian Sommer Thygesen,
Philip Hofmann
Abstract:
The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is stud…
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The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of $λ_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength.
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Submitted 17 June, 2017;
originally announced June 2017.
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Quasi one-dimensional metallic band dispersion in the commensurate charge density wave of $1T$-TaS$_2$
Authors:
Arlette S. Ngankeu,
Kevin Guilloy,
Sanjoy K. Mahatha,
Marco Bianchi,
Charlotte E. Sanders,
Kai Rossnagel,
Jill A. Miwa,
Philip Hofmann
Abstract:
The commensurate charge density wave (CDW) in the layered compound $1T$-TaS$_2$ has hitherto mostly been treated as a quasi two-dimensional phenomenon. Recent band structure calculations have, however, predicted that the CDW coexists with a nearly one-dimensional metallic dispersion perpendicular to the crystal planes. Using synchrotron radiation based angle-resolved photoemission spectroscopy, we…
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The commensurate charge density wave (CDW) in the layered compound $1T$-TaS$_2$ has hitherto mostly been treated as a quasi two-dimensional phenomenon. Recent band structure calculations have, however, predicted that the CDW coexists with a nearly one-dimensional metallic dispersion perpendicular to the crystal planes. Using synchrotron radiation based angle-resolved photoemission spectroscopy, we show that this metallic band does in fact exist. Its occupied band width is in excellent agreement with predictions for a simple $τ_c$ stacking order of the CDW between adjacent layers and its periodicity in the $c$ direction is $2 π/ c$.
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Submitted 1 May, 2017;
originally announced May 2017.
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Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si
Authors:
Baojie Feng,
Botao Fu,
Shusuke Kasamatsu,
Suguru Ito,
Peng Cheng,
Cheng-Cheng Liu,
Ya Feng,
Shilong Wu,
Sanjoy K. Mahatha,
Polina Sheverdyaeva,
Paolo Moras,
Masashi Arita,
Osamu Sugino,
Tai-Chang Chiang,
Kenya Shimada,
Koji Miyamoto,
Taichi Okuda,
Kehui Wu,
Lan Chen,
Yugui Yao,
Iwao Matsuda
Abstract:
Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, Zr…
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Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the Γ point and are protected by mirror reflection symmetry. Our results establish Cu2Si as a new platform to study the novel physical properties in two-dimensional Dirac materials and provide new opportunities to realize high-speed low-dissipation devices.
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Submitted 17 August, 2017; v1 submitted 29 November, 2016;
originally announced November 2016.
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Magnetic decoupling of ferromagnetic metals through a graphene spacer
Authors:
I. Grimaldi,
M. Papagno,
L. Ferrari,
P. M. Sheverdyaeva,
S. K. Mahatha,
D. Pacilé,
C. Carbone
Abstract:
We study the magnetic coupling between different ferromagnetic metals (FMs) across a graphene (G) layer, and the role of graphene as a thin covalent spacer. Starting with G grown on a FM substrate (Ni or Co), we deposit on top at room temperature different FM metals (Fe, Ni, Co). By measuring the dichroic effect of 3p photoemission lines we detect the magnetization of the substrate and the sign of…
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We study the magnetic coupling between different ferromagnetic metals (FMs) across a graphene (G) layer, and the role of graphene as a thin covalent spacer. Starting with G grown on a FM substrate (Ni or Co), we deposit on top at room temperature different FM metals (Fe, Ni, Co). By measuring the dichroic effect of 3p photoemission lines we detect the magnetization of the substrate and the sign of the exchange coupling in FM overlayer at room temperature. We show that the G layer magnetically decouples the FM metals.
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Submitted 7 September, 2016;
originally announced September 2016.
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Interface electronic structure at the topological insulator - ferrimagnetic insulator junction
Authors:
Y. Kubota,
K. Murata,
J. Miyawaki,
K. Ozawa,
M. C. Onbasli,
T. Shirasawa,
B. Feng,
Sh. Yamamoto,
R. -Y. Liu,
S. Yamamoto,
S. K. Mahatha,
P. Sheverdyaeva,
P. Moras,
C. A. Ross,
S. Suga,
Y. Harada,
K. L. Wang,
I. Matsuda
Abstract:
An interface electron state at the junction between a three-dimensional topological insulator (TI) film of Bi2Se3 and a ferrimagnetic insulator film of Y3Fe5O12 (YIG) was investigated by measurements of angle-resolved photoelectron spectroscopy and X-ray absorption magnetic circular dichroism (XMCD). The surface state of the Bi2Se3 film was directly observed and localized 3d spin states of the Fe3…
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An interface electron state at the junction between a three-dimensional topological insulator (TI) film of Bi2Se3 and a ferrimagnetic insulator film of Y3Fe5O12 (YIG) was investigated by measurements of angle-resolved photoelectron spectroscopy and X-ray absorption magnetic circular dichroism (XMCD). The surface state of the Bi2Se3 film was directly observed and localized 3d spin states of the Fe3+ state in the YIG film were confirmed. The proximity effect is likely described in terms of the exchange interaction between the localized Fe 3d electrons in the YIG film and delocalized electrons of the surface and bulk states in the Bi2Se3 film. The Curie temperature (TC) may be increased by reducing the amount of the interface Fe2+ ions with opposite spin direction observable as a pre-edge in the XMCD spectra.
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Submitted 17 April, 2016;
originally announced April 2016.
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Energy-momentum mapping of d-derived Au(111) states in a thin film
Authors:
P. M. Sheverdyaeva,
R. Requist,
P. Moras,
S. K. Mahatha,
M. Papagno,
L. Ferrari,
E. Tosatti,
C. Carbone
Abstract:
The quantum well states of a film can be used to sample the electronic structure of the parent bulk material and determine its band parameters. We highlight the benefits of two-dimensional film band mapping, with respect to complex bulk analysis, in an angle-resolved photoemission spectroscopy study of the 5d states of Au(111). Discrete 5d-derived quantum well states of various orbital characters…
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The quantum well states of a film can be used to sample the electronic structure of the parent bulk material and determine its band parameters. We highlight the benefits of two-dimensional film band mapping, with respect to complex bulk analysis, in an angle-resolved photoemission spectroscopy study of the 5d states of Au(111). Discrete 5d-derived quantum well states of various orbital characters form in Au(111) films and span the width of the corresponding bulk bands. For sufficiently thick films, the dispersion of these states samples the bulk band edges, as confirmed by first-principles calculations, thus providing the positions of the critical points of bulk Au in agreement with previously determined values. In turn, this analysis identifies several d-like surface states and resonances with large spin-splittings that originate from the strong spin-orbit coupling of the Au 5d atomic levels.
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Submitted 29 March, 2016;
originally announced March 2016.
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Mesoscopic electron focusing in topological insulators
Authors:
P. Sessi,
P. Rüßmann,
T. Bathon,
A. Barla,
K. A. Kokh,
O. E. Tereshchenko,
K. Fauth,
S. K. Mahatha,
M. A. Valbuena,
S. Godey,
A. Mugarza,
P. Gargiani,
M. Valvidares,
N. H. Long,
C. Carbone,
P. Mavropoulos,
S. Blügel,
M. Bode
Abstract:
The particle wave duality sets a fundamental correspondence between optics and quantum mechanics. Within this framework, the propagation of quasiparticles can give rise to superposition phenomena which, like for electromagnetic waves, can be described by the Huygens principle. However, the utilization of this principle by means of propagation and manipulation of quantum information is limited by t…
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The particle wave duality sets a fundamental correspondence between optics and quantum mechanics. Within this framework, the propagation of quasiparticles can give rise to superposition phenomena which, like for electromagnetic waves, can be described by the Huygens principle. However, the utilization of this principle by means of propagation and manipulation of quantum information is limited by the required coherence in time and space. Here we show that in topological insulators, which in their pristine form are characterized by opposite propagation directions for the two quasiparticles spin channels, mesoscopic focusing of coherent charge density oscillations can be obtained at large nested segments of constant energy contours by magnetic surface doping. Our findings provide evidence of strongly anisotropic Dirac fermion-mediated interactions. Even more remarkably, the validity of our findings goes beyond topological insulators but applies for systems with spin orbit lifted degeneracy in general. It demonstrates how spin information can be transmitted over long distances, allowing the design of experiments and devices based on coherent quantum effects in this fascinating class of materials.
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Submitted 11 February, 2016;
originally announced February 2016.
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Spin-orbit interaction and Dirac cones in d orbital noble metal surface states
Authors:
Ryan Requist,
Polina M. Sheverdyaeva,
Paolo Moras,
Sanjoy K. Mahatha,
Carlo Carbone,
Erio Tosatti
Abstract:
Band splittings, chiral spin polarization and topological surface states generated by spin-orbit interactions at crystal surfaces are receiving a lot of attention for their potential device applications as well as fascinating physical properties. Most studies have focused on sp states near the Fermi energy, which are relevant for transport and have long lifetimes. Far less explored, though in prin…
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Band splittings, chiral spin polarization and topological surface states generated by spin-orbit interactions at crystal surfaces are receiving a lot of attention for their potential device applications as well as fascinating physical properties. Most studies have focused on sp states near the Fermi energy, which are relevant for transport and have long lifetimes. Far less explored, though in principle stronger, are spin-orbit interaction effecs within d states, including those deep below the Fermi energy. Here, we report a joint photoemission/ab initio study of spin-orbit effects in the deep d orbital surface states of a 24-layer Au film grown on Ag(111) and a 24-layer Ag film grown on Au(111), singling out a conical intersection (Dirac cone) between two surface states in a large surface-projected gap at the time-reversal symmetric M points. Unlike the often isotropic dispersion at Gamma point Dirac cones, the M point cones are strongly anisotropic. An effective k.p Hamiltonian is derived to describe the anisotropic band splitting and spin polarization near the Dirac cone.
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Submitted 21 November, 2014;
originally announced November 2014.