Showing 1–24 of 24 results for author: Mack, S

X-ray free-electron lasing in a flying-focus undulator

Authors: D. Ramsey, B. Malaca, T. T. Simpson, M. Formanek, L. S. Mack, J. Vieira, D. H. Froula, J. P. Palastro

Abstract: Laser-driven free-electron lasers (LDFELs) replace magnetostatic undulators with the electromagnetic fields of a laser pulse. Because the undulator period is half the wavelength of the laser pulse, LDFELs can amplify x rays using lower electron energies and over shorter interaction lengths than a conventional free-electron laser. Here we show that a flying-focus pulse substantially reduces the ene… ▽ More Laser-driven free-electron lasers (LDFELs) replace magnetostatic undulators with the electromagnetic fields of a laser pulse. Because the undulator period is half the wavelength of the laser pulse, LDFELs can amplify x rays using lower electron energies and over shorter interaction lengths than a conventional free-electron laser. Here we show that a flying-focus pulse substantially reduces the energy required to reach high gain in an LDFEL by providing a highly uniform, high-intensity field over the entire interaction length. The flying-focus pulse features an intensity peak that travels in the opposite direction of its phase fronts. This enables an LDFEL configuration where an electron beam collides head-on with the phase fronts and experiences a near-constant undulator strength as it co-propagates with the intensity peak. Three-dimensional simulations of this configuration demonstrate the generation of megawatts of coherent x-ray radiation with 20 times less energy than a conventional laser pulse. △ Less

Submitted 16 October, 2024; originally announced October 2024.

Preserving orbital order in a layered manganite by ultrafast hybridized band excitation

Authors: L. Shen, S. Mack, G. Dakovski, G. Coslovich, O. Krupin, M. Hoffmann, S-W. Huang, Y-D. Chuang, J. A. Johnson, S. Lieu, S. Zohar, C. Ford, M. Kozina, W. Schlotter, M. P. Minitti, J. Fujioka, R. Moore, W-S. Lee, Z. Hussain, Y. Tokura, P. Littlewood, J. J. Turner

Abstract: In the mixed-valence manganites, a near-infrared laser typically melts the orbital and spin order simultaneously, corresponding to the photoinduced $d^{1}d^{0}$ $\xrightarrow{}$ $d^{0}d^{1}$ excitations in the Mott-Hubbard bands of manganese. Here, we use ultrafast methods -- both femtosecond resonant x-ray diffraction and optical reflectivity -- to demonstrate that the orbital response in the lay… ▽ More In the mixed-valence manganites, a near-infrared laser typically melts the orbital and spin order simultaneously, corresponding to the photoinduced $d^{1}d^{0}$ $\xrightarrow{}$ $d^{0}d^{1}$ excitations in the Mott-Hubbard bands of manganese. Here, we use ultrafast methods -- both femtosecond resonant x-ray diffraction and optical reflectivity -- to demonstrate that the orbital response in the layered manganite Nd$_{1-x}$Sr$_{1+x}$MnO$_{4}$ ($\it{x}$ = 2/3) does not follow this scheme. At the photoexcitation saturation fluence, the orbital order is only diminished by a few percent in the transient state. Instead of the typical $d^{1}d^{0}$ $\xrightarrow{}$ $d^{0}d^{1}$ transition, a near-infrared pump in this compound promotes a fundamentally distinct mechanism of charge transfer, the $d^{0}$ $ \xrightarrow{}$ $d^{1}L$, where $\it{L}$ denotes a hole in the oxygen band. This novel finding may pave a new avenue for selectively manipulating specific types of order in complex materials of this class. △ Less

Submitted 21 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. B 101, 201103 (2020)

Emergence of topological electronic phases in elemental lithium under pressure

Authors: Stephanie A. Mack, Sinéad M. Griffin, Jeffrey B. Neaton

Abstract: Lithium, a prototypical simple metal under ambient conditions, has a surprisingly rich phase diagram under pressure, taking up several structures with reduced symmetry, low coordination numbers, and even semiconducting character with increasing density. Using first-principles calculations, we demonstrate that some predicted high-pressure phases of elemental Li also host topological electronic stru… ▽ More Lithium, a prototypical simple metal under ambient conditions, has a surprisingly rich phase diagram under pressure, taking up several structures with reduced symmetry, low coordination numbers, and even semiconducting character with increasing density. Using first-principles calculations, we demonstrate that some predicted high-pressure phases of elemental Li also host topological electronic structures. Beginning at 80 GPa and coincident with a transition to the Pbca phase, we find Li to be a Dirac nodal line semimetal. We further calculate that Li retains linearly-dispersive energy bands in subsequent predicted higher pressure phases, and that it exhibits a Lifshitz transition between two Cmca phases at 220 GPa. The Fd-3m phase at 500 GPa forms buckled honeycomb layers that give rise to a Dirac crossing 1 eV below the Fermi energy. The well-isolated topological nodes near the Fermi level in these phases result from increasing p-orbital character with density at the Fermi level, itself a consequence of rising 1s core wavefunction overlap, and a preference for nonsymmorphic symmetries in the crystal structures favored at these pressures. Our results provide evidence that under pressure, bulk 3D materials with light elements, or even pure elemental systems, can undergo topological phase transitions hosting nontrivial topological properties near the Fermi level with measurable consequences; and that, through pressure, we can access these novel phases in elemental lithium. △ Less

Submitted 2 April, 2019; originally announced April 2019.

Comments: 5 pages, 5 figures, accepted for publication

Journal ref: Proceedings of the National Academy of Sciences Apr 2019, 201821533

Optical Frequency Combs from High-Order Sideband Generation

Authors: Darren Valovcin, Hunter Banks, Shawn Mack, Arthur Gossard, Kenneth West, Loren Pfeiffer, Mark Sherwin

Abstract: We report on the generation of frequency combs from the recently-discovered phenomenon of high-order sideband generation (HSG). A near-band gap continuous-wave (cw) laser with frequency $f_\text{NIR}$ was transmitted through an epitaxial layer containing GaAs/AlGaAs quantum wells that were driven by quasi-cw in-plane electric fields $F_\text{THz}$ between 4 and 50 kV/cm oscillating at frequencies… ▽ More We report on the generation of frequency combs from the recently-discovered phenomenon of high-order sideband generation (HSG). A near-band gap continuous-wave (cw) laser with frequency $f_\text{NIR}$ was transmitted through an epitaxial layer containing GaAs/AlGaAs quantum wells that were driven by quasi-cw in-plane electric fields $F_\text{THz}$ between 4 and 50 kV/cm oscillating at frequencies $f_\text{THz}$ between 240 and 640 GHz. Frequency combs with teeth at $f_\text{sideband}=f_\text{NIR}+nf_\text{THz}$ ($n$ even) were produced, with maximum reported $n>120$, corresponding to a maximum comb span $>80$ THz. Comb spectra with the identical product $f_\text{THz}\times F_\text{THz}$ were found to have similar spans and shapes in most cases, as expected from the picture of HSG as a scattering-limited electron-hole recollision phenomenon. The HSG combs were used to measure the frequency and linewidth of our THz source as a demonstration of potential applications. △ Less

Submitted 22 August, 2018; originally announced August 2018.

Symmetry Breaking of the Persistent Spin Helix in Quantum Transport

Authors: Pirmin J. Weigele, D. C. Marinescu, Florian Dettwiler, Jiyong Fu, Shawn Mack, J. Carlos Egues, David D. Awschalom, Dominik M. Zumbühl

Abstract: We exploit the high-symmetry spin state obtained for equal Rashba and linear Dresselhaus interactions to derive a closed-form expression for the weak localization magnetoconductivity -- the paradigmatic signature of spin-orbit coupling in quantum transport. The small parameter of the theory is the deviation from the symmetry state introduced by the mismatch of the linear terms and by the cubic Dre… ▽ More We exploit the high-symmetry spin state obtained for equal Rashba and linear Dresselhaus interactions to derive a closed-form expression for the weak localization magnetoconductivity -- the paradigmatic signature of spin-orbit coupling in quantum transport. The small parameter of the theory is the deviation from the symmetry state introduced by the mismatch of the linear terms and by the cubic Dresselhaus term. In this regime, we perform quantum transport experiments in GaAs quantum wells. Top and back gates allow independent tuning of the Rashba and Dresselhaus terms in order to explore the broken-symmetry regime where the formula applies. We present a reliable two-step method to extract all parameters from fits to the new expression, obtaining excellent agreement with recent experiments. This provides experimental confirmation of the new theory, and advances spin-orbit coupling towards a powerful resource in emerging quantum technologies. △ Less

Submitted 17 January, 2018; originally announced January 2018.

Comments: 13 pages, 6 figures, supplementary included on arXiv

Journal ref: Phys. Rev. B 101, 035414 (2020)

Dynamical birefringence: Electron-hole recollisions as probes of Berry curvature

Authors: Hunter B. Banks, Qile Wu, Darren C. Valovcin, Shawn Mack, Arthur C. Gossard, Loren Pfeiffer, Ren-Bao Liu, Mark S. Sherwin

Abstract: The direct measurement of Berry phases is still a great challenge in condensed matter systems. The bottleneck has been the ability to adiabatically drive an electron coherently across a large portion of the Brillouin zone in a solid where the scattering is strong and complicated. We break through this bottleneck and show that high-order sideband generation (HSG) in semiconductors is intimately aff… ▽ More The direct measurement of Berry phases is still a great challenge in condensed matter systems. The bottleneck has been the ability to adiabatically drive an electron coherently across a large portion of the Brillouin zone in a solid where the scattering is strong and complicated. We break through this bottleneck and show that high-order sideband generation (HSG) in semiconductors is intimately affected by Berry phases. Electron-hole recollisions and HSG occur when a near-band gap laser beam excites a semiconductor that is driven by sufficiently strong terahertz (THz)-frequency electric fields. We carried out experimental and theoretical studies of HSG from three GaAs/AlGaAs quantum wells. The observed HSG spectra contain sidebands up to the 90th order, to our knowledge the highest-order optical nonlinearity observed in solids. The highest-order sidebands are associated with electron-hole pairs driven coherently across roughly 10% of the Brillouin zone around the Γpoint. The principal experimental claim is a dynamical birefringence: the sidebands, when the order is high enough (> 20), are usually stronger when the exciting near-infrared (NIR) and the THz electric fields are polarized perpendicular than parallel; the sideband intensities depend on the angles between the THz field and the crystal axes in samples with sufficiently weak quenched disorder; and the sidebands exhibit significant ellipticity that increases with increasing sideband order, despite nearly linear excitation and driving fields. We explain dynamical birefringence by generalizing the three-step model for high order harmonic generation. The hole accumulates Berry phases due to variation of its internal state as the quasi-momentum changes under the THz field. Dynamical birefringence arises from quantum interference between time-reversed pairs of electron-hole recollision pathways. △ Less

Submitted 12 October, 2017; v1 submitted 26 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. X 7, 041042 (2017)

Stretchable persistent spin helices in GaAs quantum wells

Authors: Florian Dettwiler, Jiyong Fu, Shawn Mack, Pirmin J. Weigele, J. Carlos Egues, David D. Awschalom, Dominik M. Zumbühl

Abstract: The Rashba and Dresselhaus spin-orbit (SO) interactions in 2D electron gases act as effective magnetic fields with momentum-dependent directions, which cause spin decay as the spins undergo arbitrary precessions about these randomly-oriented SO fields due to momentum scattering. Theoretically and experimentally, it has been established that by fine-tuning the Rashba $α$ and Dresselhaus $β$ couplin… ▽ More The Rashba and Dresselhaus spin-orbit (SO) interactions in 2D electron gases act as effective magnetic fields with momentum-dependent directions, which cause spin decay as the spins undergo arbitrary precessions about these randomly-oriented SO fields due to momentum scattering. Theoretically and experimentally, it has been established that by fine-tuning the Rashba $α$ and Dresselhaus $β$ couplings to equal $\it{fixed}$ strengths $α=β$, the total SO field becomes unidirectional thus rendering the electron spins immune to dephasing due to momentum scattering. A robust persistent spin helix (PSH) has already been experimentally realized at this singular point $α=β$. Here we employ the suppression of weak antilocalization as a sensitive detector for matched SO fields together with a technique that allows for independent electrical control over the SO couplings via top gate voltage $V_T$ and back gate voltage $V_B$. We demonstrate for the first time the gate control of $β$ and the $\it{continuous\,locking}$ of the SO fields at $α=β$, i.e., we are able to vary both $α$ and $β$ controllably and continuously with $V_T$ and $V_B$, while keeping them locked at equal strengths. This makes possible a new concept: "stretchable PSHs", i.e., helical spin patterns with continuously variable pitches $P$ over a wide parameter range. The extracted spin-diffusion lengths and decay times as a function of $α/β$ show a significant enhancement near $α/β=1$. Since within the continuous-locking regime quantum transport is diffusive (2D) for charge while ballistic (1D) for spin and thus amenable to coherent spin control, stretchable PSHs could provide the platform for the much heralded long-distance communication $\sim 8 - 25$ $μ$m between solid-state spin qubits. △ Less

Submitted 20 February, 2017; v1 submitted 16 February, 2017; originally announced February 2017.

Comments: 5 color figures, with supplementary info available on arXiv. arXiv admin note: substantial text overlap with arXiv:1403.3518

Journal ref: Phys. Rev. X 7, 031010 (2017)

Electrical spin protection and manipulation via gate-locked spin-orbit fields

Authors: F. Dettwiler, J. Fu, S. Mack, P. J. Weigele, J. C. Egues, D. D. Awschalom, D. M. Zumbühl

Abstract: The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin relaxation. A unique situation arises when the Rashba and Dresselhaus SO fields are matched, strongly protecting spins from relaxation, as recently demonstrated.… ▽ More The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin relaxation. A unique situation arises when the Rashba and Dresselhaus SO fields are matched, strongly protecting spins from relaxation, as recently demonstrated. Quantum computation and spintronics devices such as the paradigmatic spin transistor could vastly benefit if such spin protection could be expanded from a single point into a broad range accessible with in-situ gate-control, making possible tunable SO rotations under protection from relaxation. Here, we demonstrate broad, independent control of all relevant SO fields in GaAs quantum wells, allowing us to tune the Rashba and Dresselhaus SO fields while keeping both locked to each other using gate voltages. Thus, we can electrically control and simultaneously protect the spin. Our experiments employ quantum interference corrections to electrical conductivity as a sensitive probe of SO coupling. Finally, we combine transport data with numerical SO simulations to precisely quantify all SO terms. △ Less

Submitted 14 March, 2014; originally announced March 2014.

Comments: 5 pages, 4 figures (color), plus supplementary information 18 pages, 8 figures (color) as ancillary arXiv pdf

Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations

Authors: Hunter Banks, Ben Zaks, Fan Yang, Shawn Mack, Arthur C. Gossard, Renbao Liu, Mark S. Sherwin

Abstract: Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18 sidebands are observed at frequencies $f_{\text{sideband}}=f_{\text{NIR}}+2n f_{\text{THz}}$, with $-8 \le 2n \le 28$. Electrons and holes recollide with total kine… ▽ More Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18 sidebands are observed at frequencies $f_{\text{sideband}}=f_{\text{NIR}}+2n f_{\text{THz}}$, with $-8 \le 2n \le 28$. Electrons and holes recollide with total kinetic energies up to 57 meV, well above the $E_{\text{LO}} = 36$ meV threshold for longitudinal optical (LO) phonon emission. Sidebands with order up to $2n=22$ persist up to room temperature. A simple model shows that LO phonon scattering suppresses but does not eliminate sidebands associated with kinetic energies above $E_{\text{LO}}$. △ Less

Submitted 2 January, 2014; v1 submitted 12 September, 2013; originally announced September 2013.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 111, 267402 (2013)

Ferromagnetism and infrared electrodynamics of Ga$_{1-x}$Mn$_{x}$As}

Authors: B. C. Chapler, S. Mack, R. C. Myers, A. Frenzel, B. C. Pursley, K. S. Burch, A. M. Dattelbaum, N. Samarth, D. D. Awschalom, D. N. Basov

Abstract: We report on the magnetic and the electronic properties of the prototype dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As using infrared (IR) spectroscopy. Trends in the ferromagnetic transition temperature $T_C$ with respect to the IR spectral weight are examined using a sum-rule analysis of IR conductivity spectra. We find non-monotonic behavior of trends in $T_C$ with the spectral weight to eff… ▽ More We report on the magnetic and the electronic properties of the prototype dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As using infrared (IR) spectroscopy. Trends in the ferromagnetic transition temperature $T_C$ with respect to the IR spectral weight are examined using a sum-rule analysis of IR conductivity spectra. We find non-monotonic behavior of trends in $T_C$ with the spectral weight to effective Mn ratio, which suggest a strong double-exchange component to the FM mechanism, and highlights the important role of impurity states and localization at the Fermi level. Spectroscopic features of the IR conductivity are tracked as they evolve with temperature, doping, annealing, As-antisite compensation, and are found only to be consistent with an Mn-induced IB scenario. Furthermore, our detailed exploration of these spectral features demonstrates that seemingly conflicting trends reported in the literature regarding a broad mid-IR resonance with respect to carrier density in Ga$_{1-x}$Mn$_x$As are in fact not contradictory. Our study thus provides a consistent experimental picture of the magnetic and electronic properties of Ga$_{1-x}$Mn$_x$As. △ Less

Submitted 6 June, 2013; originally announced June 2013.

Journal ref: Phys. Rev. B 87, 205314 (2013)

Feedback cooling of cantilever motion using a quantum point contact transducer

Authors: M. Montinaro, A. Mehlin, H. S. Solanki, P. Peddibhotla, S. Mack, D. D. Awschalom, M. Poggio

Abstract: We use a quantum point contact (QPC) as a displacement transducer to measure and control the low-temperature thermal motion of a nearby micromechanical cantilever. The QPC is included in an active feedback loop designed to cool the cantilever's fundamental mechanical mode, achieving a squashing of the QPC noise at high gain. The minimum achieved effective mode temperature of 0.2 K and the displace… ▽ More We use a quantum point contact (QPC) as a displacement transducer to measure and control the low-temperature thermal motion of a nearby micromechanical cantilever. The QPC is included in an active feedback loop designed to cool the cantilever's fundamental mechanical mode, achieving a squashing of the QPC noise at high gain. The minimum achieved effective mode temperature of 0.2 K and the displacement resolution of 10^(-11) m/Hz^(1/2) are limited by the performance of the QPC as a one-dimensional conductor and by the cantilever-QPC capacitive coupling. △ Less

Submitted 20 July, 2012; originally announced July 2012.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 101, 133104 (2012)

Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

Authors: B. C. Chapler, S. Mack, L. Ju, T. W. Elson, B. W. Boudouris, E. Namdas, J. D. Yuen, A. J. Heeger, N. Samarth, M. Di Ventra, R. A. Segalman, D. D. Awschalom, F. Wang, D. N. Basov

Abstract: We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of electric field induced changes to the frequency dependent conductivity in the accumulation or depletions layers of the active material via infrared (IR) spectrosc… ▽ More We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of electric field induced changes to the frequency dependent conductivity in the accumulation or depletions layers of the active material via infrared (IR) spectroscopy. The spectra of the (Ga,Be)As-based device reveal electric field induced changes to the IR conductivity consistent with an enhancement or reduction of the Drude response in the accumulation and depletion polarities, respectively. The spectroscopic features of this device are all indicative of metallic conduction within the GaAs host valence band (VB). For the (Ga,Mn)As-based device, the spectra show enhancement of the far-IR itinerant carrier response and broad mid-IR resonance upon hole accumulation, with a decrease of these features in the depletion polarity. These later spectral features demonstrate that conduction in ferromagnetic (FM) Ga$_{1-x}$Mn$_x$As is distinct from genuine metallic behavior due to extended states in the host VB. Furthermore, these data support the notion that a Mn-induced impurity band plays a vital role in the electron dynamics of FM Ga$_{1-x}$Mn$_x$As. We add, a sum-rule analysis of the spectra of our devices suggests that the Mn or Be doping does not lead to a substantial renormalization of the GaAs host VB. △ Less

Submitted 5 July, 2012; v1 submitted 4 July, 2012; originally announced July 2012.

An infrared probe of the insulator-to-metal transition in GaMnAs and GaBeAs

Authors: B. C. Chapler, R. C. Myers, S. Mack, A. Frenzel, B. C. Pursley, K. S. Burch, E. J. Singley, A. M. Dattelbaum, N. Samarth, D. D. Awschalom, D. N. Basov

Abstract: We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga$_{1-x}$Mn$_x$As, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also per… ▽ More We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga$_{1-x}$Mn$_x$As, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be doped samples however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band. △ Less

Submitted 1 September, 2011; originally announced September 2011.

Journal ref: B. C. Chapler, R. C. Myers, S. Mack, A. Frenzel, B. C. Pursley, K. S. Burch, E. J. Singley, A. M. Dattelbaum, N. Samarth, D. D. Awschalom, and D. N. Basov, Phys. Rev. B 84, 081203(R) (2011)

Phonon driven spin distribution due to the spin-Seebeck effect

Authors: C. M. Jaworski, J. Yang, S. Mack, D. D. Awschalom, R. C. Myers, J. P. Heremans

Abstract: Here we report on measurements of the spin-Seebeck effect of GaMnAs over an extended temperature range alongside the thermal conductivity, specific heat, magnetization, and thermoelectric power. The amplitude of the spin-Seebeck effect in GaMnAs scales with the thermal conductivity of the GaAs substrate and the phonon-drag contribution to the thermoelectric power of the GaMnAs, demonstrating that… ▽ More Here we report on measurements of the spin-Seebeck effect of GaMnAs over an extended temperature range alongside the thermal conductivity, specific heat, magnetization, and thermoelectric power. The amplitude of the spin-Seebeck effect in GaMnAs scales with the thermal conductivity of the GaAs substrate and the phonon-drag contribution to the thermoelectric power of the GaMnAs, demonstrating that phonons drive the spin redistribution. A phenomenological model involving phonon-magnon drag explains the spatial and temperature dependence of the measured spin distribution. △ Less

Submitted 4 February, 2011; originally announced February 2011.

Comments: 12 pages, 3 figures

Journal ref: Phys. Rev. Lett. 106, 186601 (2011)

Oscillatory Spin Polarization and Magneto-Optic Kerr Effect in Fe3O4 Thin Films on GaAs(001)

Authors: Yan Li, Wei Han, A. G. Swartz, K. Pi, J. J. I. Wong, S. Mack, D. D. Awschalom, R. K. Kawakami

Abstract: The spin dependent properties of epitaxial Fe3O4 thin films on GaAs(001) are studied by the ferromagnetic proximity polarization (FPP) effect and magneto-optic Kerr effect (MOKE). Both FPP and MOKE show oscillations with respect to Fe3O4 film thickness, and the oscillations are large enough to induce repeated sign reversals. We attribute the oscillatory behavior to spin-polarized quantum well stat… ▽ More The spin dependent properties of epitaxial Fe3O4 thin films on GaAs(001) are studied by the ferromagnetic proximity polarization (FPP) effect and magneto-optic Kerr effect (MOKE). Both FPP and MOKE show oscillations with respect to Fe3O4 film thickness, and the oscillations are large enough to induce repeated sign reversals. We attribute the oscillatory behavior to spin-polarized quantum well states forming in the Fe3O4 film. Quantum confinement of the t2g states near the Fermi level provides an explanation for the similar thickness dependences of the FPP and MOKE oscillations. △ Less

Submitted 20 September, 2010; originally announced September 2010.

Comments: to appear in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 105, 167203 (2010)

Epitaxial EuO Thin Films on GaAs

Authors: A. G. Swartz, J. Ciraldo, J. J. I. Wong, Yan Li, Wei Han, Tao Lin, S. Mack, J. Shi, D. D. Awschalom, R. K. Kawakami

Abstract: We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate… ▽ More We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57°, a significant remanent magnetization, and a Curie temperature of 69 K. △ Less

Submitted 31 August, 2010; v1 submitted 4 August, 2010; originally announced August 2010.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 97, 112509 (2010)

Observation of the Spin-Seebeck Effect in a Ferromagnetic Semiconductor

Authors: C. M. Jaworski, J. Yang, S. Mack, D. D. Awschalom, J. P. Heremans, R. C. Myers

Abstract: The spin-Seebeck effect was recently discovered in a metallic ferromagnet and consists of a thermally generated spin distribution that is electrically measured utilizing the inverse spin Hall effect. Here this effect is reproduced experimentally in a ferromagnetic semiconductor, GaMnAs, which allows for flexible design of the magnetization directions, a larger spin polarization, and measurements a… ▽ More The spin-Seebeck effect was recently discovered in a metallic ferromagnet and consists of a thermally generated spin distribution that is electrically measured utilizing the inverse spin Hall effect. Here this effect is reproduced experimentally in a ferromagnetic semiconductor, GaMnAs, which allows for flexible design of the magnetization directions, a larger spin polarization, and measurements across the magnetic phase transition. The spin-Seebeck effect in GaMnAs is observed even in the absence of longitudinal charge transport. The spatial distribution of spin-currents is maintained across electrical breaks highlighting the local nature of the effect, which is therefore ascribed to a thermally induced spin redistribution. △ Less

Submitted 8 July, 2010; originally announced July 2010.

Comments: 12 pages, 5 figures, plus supporting information 4 pages, 5 figures, 1 table

Journal ref: Nature Materials 9, 898-903 (2010)

Spin Control of Drifting Electrons using Local Nuclear Polarization in Ferromagnet/Semiconductor Heterostructures

Authors: M. E. Nowakowski, G. D. Fuchs, S. Mack, N. Samarth, D. D. Awschalom

Abstract: We demonstrate methods to locally control the spin rotation of moving electrons in a GaAs channel. The Larmor frequency of optically-injected spins is modulated when the spins are dragged through a region of spin-polarized nuclei created at a MnAs/GaAs interface. The effective field created by the nuclei is controlled either optically or electrically using the ferromagnetic proximity polarization… ▽ More We demonstrate methods to locally control the spin rotation of moving electrons in a GaAs channel. The Larmor frequency of optically-injected spins is modulated when the spins are dragged through a region of spin-polarized nuclei created at a MnAs/GaAs interface. The effective field created by the nuclei is controlled either optically or electrically using the ferromagnetic proximity polarization effect. Spin rotation is also tuned by controlling the carrier traverse time through the polarized region. We demonstrate coherent spin rotations exceeding 4 pi radians during transport. △ Less

Submitted 17 June, 2010; originally announced June 2010.

Comments: 15 pages, 4 figures

Visualizing Critical Correlations near the Metal-Insulator Transition in Ga1-xMnxAs

Authors: Anthony Richardella, Pedram Roushan, Shawn Mack, Brian Zhou, David A. Huse, David D. Awschalom, Ali Yazdani

Abstract: Electronic states in disordered conductors on the verge of localization are predicted to exhibit critical spatial characteristics indicative of the proximity to a metal- insulator phase transition. We have used scanning tunneling microscopy to visualize electronic states in Ga1-xMnxAs samples close to this transition. Our measurements show that doping-induced disorder produces strong spatial var… ▽ More Electronic states in disordered conductors on the verge of localization are predicted to exhibit critical spatial characteristics indicative of the proximity to a metal- insulator phase transition. We have used scanning tunneling microscopy to visualize electronic states in Ga1-xMnxAs samples close to this transition. Our measurements show that doping-induced disorder produces strong spatial variations in the local tunneling conductance across a wide range of energies. Near the Fermi energy, where spectroscopic signatures of electron-electron interaction are the most prominent, the electronic states exhibit a diverging spatial correlation length. Power-law decay of the spatial correlations is accompanied by log-normal distributions of the local density of states and multifractal spatial characteristics. Our method can be used to explore critical correlations in other materials close to a quantum critical point. △ Less

Submitted 4 February, 2010; originally announced February 2010.

Comments: 11 pages, 5 figures, supporting Online Material: 8 pages including 4 figures

Journal ref: Science Vol. 327, 665 (2010)

One-Dimensional Alignment of Nanoparticles Via Magnetic Sorting

Authors: R. Bouskila, R. McAloney, S. Mack, D. D. Awschalom, M. C. Goh, K. S. Burch

Abstract: Near room temperature, thin films of MnAs spontaneously align into two phases, one ferromagnetic and the other paramagnetic. These two phases take the intriguing form of nanoscale "wires." In this experiment, we investigate the spontaneous formation of ordered linear arrays of magnetite nanoparticles on MnAs thin films using scanning probe microscopy. Near room temperature, thin films of MnAs spontaneously align into two phases, one ferromagnetic and the other paramagnetic. These two phases take the intriguing form of nanoscale "wires." In this experiment, we investigate the spontaneous formation of ordered linear arrays of magnetite nanoparticles on MnAs thin films using scanning probe microscopy. △ Less

Submitted 15 January, 2010; originally announced January 2010.

Comments: 11 pages, 5 figures. submitted to Nanoletters

Emergence of the persistent spin helix in semiconductor quantum wells

Authors: Jake D. Koralek, Chris Weber, Joe Orenstein, Andrei Bernevig, Shou-Cheng Zhang, Shawn Mack, David Awschalom

Abstract: According to Noethers theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electrons spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry i… ▽ More According to Noethers theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electrons spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be achieved in a two-dimensional electron gas, despite the presence of spin-orbit coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the persistent spin helix. SU(2) is realized, in principle, when the strength of two dominant spin-orbit interactions, the Rashba (strength parameterized by α) and linear Dresselhaus (β_1), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (β_3) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as αapproaches β_1. Here we observe experimentally the emergence of the persistent spin helix in GaAs quantum wells by independently tuning αand β_1. Using transient spin-grating spectroscopy, we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point......... △ Less

Submitted 27 March, 2009; v1 submitted 26 March, 2009; originally announced March 2009.

Comments: Will be published in Nature on April 2, 2009

Journal ref: Nature 458, 610-613 (2009)

Time-resolved Dynamics of the Spin Hall Effect

Authors: N. P. Stern, D. W. Steuerman, S. Mack, A. C. Gossard, D. D. Awschalom

Abstract: The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for potential spintronics devices. One realization of these spin-orbit phenomena, the spin Hall effect (SHE), has been studied as a means of all-electrical spin curre… ▽ More The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for potential spintronics devices. One realization of these spin-orbit phenomena, the spin Hall effect (SHE), has been studied as a means of all-electrical spin current generation and spin separation in both semiconductor and metallic systems. Previous measurements of the spin Hall effect have focused on steady-state generation and time-averaged detection, without directly addressing the accumulation dynamics on the timescale of the spin coherence time. Here, we demonstrate time-resolved measurement of the dynamics of spin accumulation generated by the extrinsic spin Hall effect in a doped GaAs semiconductor channel. Using electrically-pumped time-resolved Kerr rotation, we image the accumulation, precession, and decay dynamics near the channel boundary with spatial and temporal resolution and identify multiple evolution time constants. We model these processes using time-dependent diffusion analysis utilizing both exact and numerical solution techniques and find that the underlying physical spin coherence time differs from the dynamical rates of spin accumulation and decay observed near the sample edges. △ Less

Submitted 30 May, 2008; originally announced June 2008.

Comments: 16 pages, 4 figures

Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs

Authors: S. Mack, R. C. Myers, J. T. Heron, A. C. Gossard, D. D. Awschalom

Abstract: Heavily-alloyed, 100 nm Ga1-xMnxAs (x>0.1) films are obtained via low temperature molecular beam epitaxy utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible, optimized electronic, magnetic and structural properties are found in a narrow range of stoichiometric growth conditions. The Curie temperature of stoichiometric material is 150-… ▽ More Heavily-alloyed, 100 nm Ga1-xMnxAs (x>0.1) films are obtained via low temperature molecular beam epitaxy utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible, optimized electronic, magnetic and structural properties are found in a narrow range of stoichiometric growth conditions. The Curie temperature of stoichiometric material is 150-165 K and independent of x within a large window of growth conditions while substitutional Mn content increases linearly, contradicting the prediction of the Zener Model of hole-mediated ferromagnetism. △ Less

Submitted 21 March, 2008; originally announced March 2008.

Comments: 12 pages, 3 figures

Drift and Diffusion of Spins Generated by the Spin Hall Effect

Authors: N. P. Stern, D. W. Steuerman, S. Mack, A. C. Gossard, D. D. Awschalom

Abstract: Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved imaging reveals that spin accumulation observed in transverse arms develops due to longitudinal drift of spin polarization produced at the sample boundaries. One- a… ▽ More Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved imaging reveals that spin accumulation observed in transverse arms develops due to longitudinal drift of spin polarization produced at the sample boundaries. One- and two-dimensional drift-diffusion modeling is used to explain these features, providing a more complete understanding of observations of spin accumulation and the spin Hall effect. △ Less

Submitted 28 June, 2007; originally announced June 2007.

Comments: 9 pages, 3 figures

Journal ref: Appl. Phys. Lett. 91, 062109 (2007)