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VO$_2$ under hydrostatic pressure: Isostructural phase transition close to a critical end-point
Authors:
P. Bouvier,
L. Bussmann,
D. Machon,
I. Breslavetz,
G. Garbarino,
P. Strobel,
V. Dmitriev
Abstract:
The high-pressure behavior of monoclinic VO$_2$ is revisited by a combination of Raman spectroscopy and X-ray diffraction on a single crystal under hydrostatic conditions at room temperature. A soft mode is observed up to P$_c$ = 13.9(1) GPa. At this pressure, an isostructural phase transition between two monoclinic phases M$_1$ and M$_1$' hinders this instability. The features of this transformat…
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The high-pressure behavior of monoclinic VO$_2$ is revisited by a combination of Raman spectroscopy and X-ray diffraction on a single crystal under hydrostatic conditions at room temperature. A soft mode is observed up to P$_c$ = 13.9(1) GPa. At this pressure, an isostructural phase transition between two monoclinic phases M$_1$ and M$_1$' hinders this instability. The features of this transformation (no apparent volume jump) indicate that the compression at ambient temperature passes close to a critical point. An analysis based on the Landau theory of phase transitions gives a complete description of the P-T phase diagram. The M1' is characterized by spontaneous displacements of the oxygen sub-lattice without any strong modification of the VV dimers distances nor the twist angle of vanadium chains. The spontaneous displacements of oxygen and the spontaneous deformations of the ($b_{M1}$, $c_{M1}$) plane follow the same quadratic dependence with pressure and scales with spontaneous shifts of the Raman phonons located at 225, 260 and 310 cm$^{-1}$. Pressure-induced shifts of the Raman peaks allows for new assignment of several Raman modes. In particular, the A$_g$(1)+B$_g$(1) modes at 145 cm$^{-1}$ are identified as the vanadium displacive phonons. A second transformation in the metallic phase X, which is found triclinic (P$\bar1$) is observed starting at 32 GPa, with a wide coexistence region (up to 42 GPa). Upon decompression, phase X transforms, between 20 GPa and 3 GPa, to another phase that is neither the M$_1$' nor M$_1$ phase. The structural transitions identified under pressure match with all the previously reported electronic modifications confirming that lattice and electronic degrees of freedom are closely coupled in this correlated material.
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Submitted 21 September, 2023;
originally announced September 2023.
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Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Authors:
Nicolas Paupy,
Zakaria Oulad Elhmaidi,
Alexandre Chapotot,
Tadeáš Hanuš,
Javier Arias-Zapata,
Bouraoui Ilahi,
Alexandre Heintz,
Alex Brice Poungoué Mbeunmi,
Roxana Arvinte,
Mohammad Reza Aziziyan,
Valentin Daniel,
Gwenaëlle Hamon,
Jérémie Chrétien,
Firas Zouaghi,
Ahmed Ayari,
Laurie Mouchel,
Jonathan Henriques,
Loïc Demoulin,
Thierno Mamoudou Diallo,
Philippe-Olivier Provost,
Hubert Pelletier,
Maïté Volatier,
Rufi Kurstjens,
Jinyoun Cho,
Guillaume Courtois
, et al. (10 additional authors not shown)
Abstract:
Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick and rigid Ge substrates manufactured by classical wafering techniques. Nanomembranes (NMs) provide an alternative to this approach while offering wafer-scale lateral dimensions, weight reduction, limitation of waste, and cost effecti…
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Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick and rigid Ge substrates manufactured by classical wafering techniques. Nanomembranes (NMs) provide an alternative to this approach while offering wafer-scale lateral dimensions, weight reduction, limitation of waste, and cost effectiveness. Herein, we introduce the Porous germanium Efficient Epitaxial LayEr Release (PEELER) process, which consists of the fabrication of wafer-scale detachable monocrystalline Ge NMs on porous Ge (PGe) and substrate reuse. We demonstrate monocrystalline Ge NMs with surface roughness below 1 nm on top of nanoengineered void layer enabling layer detachment. Furthermore, these Ge NMs exhibit compatibility with the growth of III-V materials. High-resolution transmission electron microscopy (HRTEM) characterization shows Ge NMs crystallinity and high-resolution X-ray diffraction (HRXRD) reciprocal space mapping endorses high-quality GaAs layers. Finally, we demonstrate the chemical reconditioning process of the Ge substrate, allowing its reuse, to produce multiple free-standing NMs from a single parent wafer. The PEELER process significantly reduces the consumption of Ge during the fabrication process which paves the way for a new generation of low-cost flexible optoelectronics devices.
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Submitted 6 October, 2022;
originally announced October 2022.
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Carrier induced ferromagnetism in the insulating Mn doped III-V semiconductor InP
Authors:
Richard Bouzerar,
Denis Machon,
Patrice Melinon,
Daniel May,
Ute Löw,
Shengqiang Zhou,
Georges Bouzerar
Abstract:
Although InP and GaAs have very similar band-structure their magnetic properties appear to drastically differ. Critical temperatures in (In,Mn)P are much smaller than that of (Ga,Mn)As and scale linearly with Mn concentration. This is in contrast to the square root behaviour found in (Ga,Mn)As. Moreover the magnetization curve exhibits an unconventional shape in (In,Mn)P contrasting with the conve…
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Although InP and GaAs have very similar band-structure their magnetic properties appear to drastically differ. Critical temperatures in (In,Mn)P are much smaller than that of (Ga,Mn)As and scale linearly with Mn concentration. This is in contrast to the square root behaviour found in (Ga,Mn)As. Moreover the magnetization curve exhibits an unconventional shape in (In,Mn)P contrasting with the conventional one of well annealed (Ga,Mn)As. By combining several theoretical approaches, the nature of ferromagnetism in Mn doped InP is investigated. It appears that the magnetic properties are essentially controlled by the position of the Mn acceptor level. Our calculations are in excellent agreement with recent measurements for both critical temperatures and magnetizations. The results are only consistent with a Fermi level lying in an impurity band, ruling out the possibility to understand the physical properties of Mn doped InP within the valence band scenario. The quantitative success found here reveals a predictive tool of choice that should open interesting pathways to address magnetic properties in other compounds
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Submitted 14 September, 2016;
originally announced September 2016.
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The crystal structure of cold compressed graphite
Authors:
Maximilian Amsler,
José A. Flores-Livas,
Lauri Lehtovaara,
Felix Balima,
S. Alireza Ghasemi,
Denis Machon,
Stéphane Pailhès,
Alexander Willand,
Damien Caliste,
Silvana Botti,
Alfonso San Miguel,
Stefan Goedecker,
Miguel A. L. Marques
Abstract:
Through a systematic structural search we found an allotrope of carbon with Cmmm symmetry which we predict to be more stable than graphite for pressures above 10 GPa. This material, which we refer to as Z-carbon, is formed by pure sp3 bonds and is the only carbon allotrope which provides an excellent match to unexplained features in experimental X-ray diffraction and Raman spectra of graphite unde…
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Through a systematic structural search we found an allotrope of carbon with Cmmm symmetry which we predict to be more stable than graphite for pressures above 10 GPa. This material, which we refer to as Z-carbon, is formed by pure sp3 bonds and is the only carbon allotrope which provides an excellent match to unexplained features in experimental X-ray diffraction and Raman spectra of graphite under pressure. The transition from graphite to Z-carbon can occur through simple sliding and buckling of graphene sheets. Our calculations predict that Z-carbon is a transparent wide band gap semiconductor with a hardness comparable to diamond.
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Submitted 6 September, 2011;
originally announced September 2011.
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Pressure-temperature phase diagram of SrTiO3 up to 53 GPa
Authors:
Mael Guennou,
Pierre Bouvier,
Jens Kreisel,
Denis Machon
Abstract:
We investigate the cubic to tetragonal phase transition in the pressure-temperature phase diagram of strontium titanate SrTiO3 (STO) by means of Raman spectroscopy and X-ray diffraction on single crystal samples. X-ray diffraction experiments are performed at room temperature, 381 and 467 K up to 53 GPa, 30 GPa and 26 GPa respectively. The observation of the superstructure reflections in the X-r…
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We investigate the cubic to tetragonal phase transition in the pressure-temperature phase diagram of strontium titanate SrTiO3 (STO) by means of Raman spectroscopy and X-ray diffraction on single crystal samples. X-ray diffraction experiments are performed at room temperature, 381 and 467 K up to 53 GPa, 30 GPa and 26 GPa respectively. The observation of the superstructure reflections in the X-ray patterns provides evidence that the crystal undergoes at all investigated temperatures a pressure-induced transition from cubic to the tetragonal I4/mcm phase, identical to the low-temperature phase. No other phase transition is observed at room temperature up to 53 GPa. Together with previously published data, our results allow us to propose a new linear phase boundary in the pressure-temperature phase diagram. The data are analyzed in the framework of the Landau theory of phase transitions. With a revised value of the coupling coefficient between the order parameter and the volume spontaneous strain, the model built from pressure-independent coefficients reproduces satisfactorily the boundary in the phase diagram, but fails at reflecting the more pronounced second-order character of the pressure-induced phase transition as compared to the temperature-induced transition. We propose a new Landau potential suitable for the description of the pressure-induced phase transition. Finally, we show that particular attention has to be paid to hydrostatic conditions in the study of the high-pressure phase transition in STO.
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Submitted 14 January, 2010; v1 submitted 5 October, 2009;
originally announced October 2009.
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High pressure behavior of CsC8 graphite intercalation compound
Authors:
N. Rey,
P. Toulemonde,
D. Machon,
L. Duclaux,
S. Le Floch,
V. Pischedda,
J. P. Itié,
A. -M. Flank,
P. Lagarde,
W. A. Chrichton,
M. Mezouar,
Th. Strässle,
D. Sheptyakov,
G. Montagnac,
A. San-Miguel
Abstract:
The high pressure phase diagram of CsC8 graphite intercalated compound has been investigated at ambient temperature up to 32 GPa. Combining X-ray and neutron diffraction, Raman and X- ray absorption spectroscopies, we report for the first time that CsC8, when pressurized, undergoes phase transitions around 2.0, 4.8 and 8 GPa. Possible candidate lattice structures and the transition mechanism inv…
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The high pressure phase diagram of CsC8 graphite intercalated compound has been investigated at ambient temperature up to 32 GPa. Combining X-ray and neutron diffraction, Raman and X- ray absorption spectroscopies, we report for the first time that CsC8, when pressurized, undergoes phase transitions around 2.0, 4.8 and 8 GPa. Possible candidate lattice structures and the transition mechanism involved are proposed. We show that the observed transitions involve the structural re- arrangement in the Cs sub-network while the distance between the graphitic layers is continuously reduced at least up to 8.9 GPa. Around 8 GPa, important modifications of signatures of the electronic structure measured by Raman and X-ray absorption spectroscopies evidence the onset of a new transition.
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Submitted 25 October, 2007;
originally announced October 2007.
