Showing 1–37 of 37 results for author: Maan, J C

The magnetic anisotropy of individually addressed spin states

Authors: L. C. J. M. Peters, P. C. M. Christianen, H. Engelkamp, G. C. Groenenboom, J. C. Maan, E. Kampert, P. T. Tinnemans, A. E. Rowan, U. Zeitler

Abstract: Controlling magnetic anisotropy is a key requirement for the fundamental understanding of molecular magnetism and is a prerequisite for numerous applications in magnetic storage, spintronics, and all-spin logic devices. In order to address the question of molecular magnetic anisotropy experimentally, we have synthesized single-crystals of a molecular spin system containing four antiferromagnetical… ▽ More Controlling magnetic anisotropy is a key requirement for the fundamental understanding of molecular magnetism and is a prerequisite for numerous applications in magnetic storage, spintronics, and all-spin logic devices. In order to address the question of molecular magnetic anisotropy experimentally, we have synthesized single-crystals of a molecular spin system containing four antiferromagnetically coupled s = 5/2 manganese(II) ions. Using low-temperature cantilever magnetometry, we demonstrate the selective population of the S = 0, 1, . . . , 10 spin states upon application of magnetic fields up to 33 T and map the magnetic anisotropy of each of these states. We observe a strong dependence of the shape and size of the magnetic anisotropy on the populated spin states, and, in particular, reveal an anisotropy reversal upon going from the lowest to the highest spin-state. △ Less

Submitted 26 October, 2021; originally announced October 2021.

Comments: 6 pages, 5 figures

Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface

Authors: I. Leermakers, K. Rubi, M. Yang, B. Kerdi, M. Goiran, W. Escoffier, A. S. Rana, A. E. M. Smink, A. Brinkman, H. Hilgenkamp, J. C. Maan, U. Zeitler

Abstract: We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers… ▽ More We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers after illumination leads to quantum oscillations in the magnetoresistance originating from the Landau quantization. The carrier density ($\sim 2 \times 10^{12}$ cm$^{-2}$) and effective mass ($\sim 1.7 ~m_e$) estimated from the oscillations suggest that the high-mobility electrons occupy the d$_{xz/yz}$ subbands of Ti:t$_{2g}$ orbital extending deep within the conducting sheet of SrTiO$_3$. Our results demonstrate that the illumination which induces additional carriers at the interface can pave the way to control the Kondo-like scattering and study the quantum transport in the complex oxide heterostructures. △ Less

Submitted 20 August, 2021; originally announced August 2021.

Manipulating quantum Hall edge channels in graphene through Scanning Gate Microscopy

Authors: Lennart Bours, Stefano Guiducci, Alina Mreńca-Kolasińska, Bartłomiej Szafran, Jan C Maan, Stefan Heun

Abstract: We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show full control over the edge channels and are able, due to the spatial variation of the tip potential, to separate co-propagating edge channels in the Hall bar, cre… ▽ More We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show full control over the edge channels and are able, due to the spatial variation of the tip potential, to separate co-propagating edge channels in the Hall bar, creating junctions between regions of different charge carrier density, that have not been observed in devices based on top- or split-gates. The solution of the corresponding quantum scattering problem is presented to substantiate these results, and possible follow-up experiments are discussed. △ Less

Submitted 12 October, 2017; v1 submitted 10 July, 2017; originally announced July 2017.

Comments: 10 pages, 12 figures

Journal ref: Phys. Rev. B 96, 195423 (2017)

A low-temperature scanning tunneling microscope capable of microscopy and spectroscopy in a Bitter magnet at up to 34 T

Authors: W. Tao, S. Singh, L. Rossi, J. W. Gerritsen, B. L. M. Hendriksen, A. A. Khajetoorians, P. C. M. Christianen, J. C. Maan, U. Zeitler, B. Bryant

Abstract: We present the design and performance of a cryogenic scanning tunneling microscope (STM) which operates inside a water-cooled Bitter magnet, which can attain a magnetic field of up to 38 T. Due to the high vibration environment generated by the magnet cooling water, a uniquely designed STM and vibration damping system are required. The STM scan head is designed to be as compact and rigid as possib… ▽ More We present the design and performance of a cryogenic scanning tunneling microscope (STM) which operates inside a water-cooled Bitter magnet, which can attain a magnetic field of up to 38 T. Due to the high vibration environment generated by the magnet cooling water, a uniquely designed STM and vibration damping system are required. The STM scan head is designed to be as compact and rigid as possible, to minimize the effect of vibrational noise as well as fit the size constraints of the Bitter magnet. The STM uses a differential screw mechanism for coarse tip - sample approach, and operates in helium exchange gas at cryogenic temperatures. The reliability and performance of the STM are demonstrated through topographic imaging and scanning tunneling spectroscopy (STS) on highly oriented pyrolytic graphite (HOPG) at T = 4.2 K and in magnetic fields up to 34 T. △ Less

Submitted 10 July, 2017; originally announced July 2017.

Comments: 7 pages, 6 figures

Journal ref: Review of Scientific Instruments 88, 093706 (2017)

Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well

Authors: T. Khouri, U. Zeitler, C. Reichl, W. Wegscheider, N. E. Hussey, S. Wiedmann, J. C. Maan

Abstract: We report a magnetotransport study of an ultra-high mobility ($\barμ\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed in a wide temperature range between 0.3 K and 60 K. The simplicity of our material system with a single sub-band occupation and free electron dispersion rules out m… ▽ More We report a magnetotransport study of an ultra-high mobility ($\barμ\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed in a wide temperature range between 0.3 K and 60 K. The simplicity of our material system with a single sub-band occupation and free electron dispersion rules out most complicated mechanisms that could give rise to the observed LMR. At low temperature, quantum oscillations are superimposed onto the LMR. Both, the featureless LMR at high $T$ and the quantum oscillations at low $T$ follow the empirical resistance rule which states that the longitudinal conductance is directly related to the derivative of the transversal (Hall) conductance multiplied by the magnetic field and a constant factor $α$ that remains unchanged over the entire temperature range. Only at low temperatures, small deviations from this resistance rule are observed beyond $ν=1$ that likely originate from a different transport mechanism for the composite fermions. △ Less

Submitted 15 November, 2016; originally announced November 2016.

Magnetotransport in single layer graphene in a large parallel magnetic field

Authors: F. Chiappini, S. Wiedmann, M. Titov, A. K. Geim, R. V. Gorbachev, E. Khestanova, A. Mishchenko, K. S. Novoselov, J. C. Maan, U. Zeitler

Abstract: Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal… ▽ More Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal. The only magnetoresistance detected at low carrier concentrations is shown to be associated with a small perpendicular component of the field which cannot be fully eliminated in the experiment. Despite the high mobility of charge carries at low temperatures, we argue that the effects of Zeeman splitting are fully masked by electrostatic potential fluctuations at charge neutrality. △ Less

Submitted 18 July, 2016; v1 submitted 4 February, 2016; originally announced February 2016.

Comments: v2: updated with some modifications/clarifications

Journal ref: Phys. Rev. B 94, 085302 (2016)

Lifting of the Landau level degeneracy in graphene devices in a tilted magnetic field

Authors: F. Chiappini, S. Wiedmann, K. S. Novoselov, A. Mishchenko, A. K. Geim, J. C. Maan, U. Zeitler

Abstract: We report on transport and capacitance measurements of graphene devices in magnetic fields up to 30 T. In both techniques, we observe the full splitting of Landau levels and we employ tilted field experiments to address the origin of the observed broken symmetry states. In the lowest energy level, the spin degeneracy is removed at filling factors $ν=\pm1$ and we observe an enhanced energy gap. In… ▽ More We report on transport and capacitance measurements of graphene devices in magnetic fields up to 30 T. In both techniques, we observe the full splitting of Landau levels and we employ tilted field experiments to address the origin of the observed broken symmetry states. In the lowest energy level, the spin degeneracy is removed at filling factors $ν=\pm1$ and we observe an enhanced energy gap. In the higher levels, the valley degeneracy is removed at odd filling factors while spin polarized states are formed at even $ν$. Although the observation of odd filling factors in the higher levels points towards the spontaneous origin of the splitting, we find that the main contribution to the gap at $ν= -4,-8$, and $-12$ is due to the Zeeman energy. △ Less

Submitted 26 November, 2015; originally announced November 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 92, 201412(R) (2015)

Temperature-driven transition from a semiconductor to a topological insulator

Authors: Steffen Wiedmann, Andreas Jost, Cornelius Thienel, Christoph Brüne, Philipp Leubner, Hartmut Buhmann, Laurens W. Molenkamp, J. C. Maan, Uli Zeitler

Abstract: We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At roo… ▽ More We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At room temperature, we find electron and hole conduction that can be described by a classical two-carrier model. Above the onset of quantized magnetotransport at low temperature, we observe a pronounced linear magnetoresistance that develops from a classical quadratic low-field magnetoresistance if electrons and holes coexist. Temperature-dependent bulk band structure calculations predict a transition from a conventional semiconductor to a topological insulator in the regime where the linear magnetoresistance occurs. △ Less

Submitted 22 May, 2015; originally announced May 2015.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 91, 205311 (2015)

Transport and thermoelectric properties of the LaAlO$_3$/SrTiO$_3$ interface

Authors: A. Jost, V. K. Guduru, S. Wiedmann, J. C. Maan, U. Zeitler, S. Wenderich, A. Brinkman, H. Hilgenkamp

Abstract: The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18 T. For $T>$ 4.2 K, two different electron-like charge carriers originating from two electron channels which contribute to transport are observed. We probe the… ▽ More The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18 T. For $T>$ 4.2 K, two different electron-like charge carriers originating from two electron channels which contribute to transport are observed. We probe the contributions of a degenerate and a non-degenerate band to the thermoelectric power and develop a consistent model to describe the temperature dependence of the thermoelectric tensor. Anomalies in the data point to an additional magnetic field dependent scattering. △ Less

Submitted 30 March, 2015; v1 submitted 28 July, 2014; originally announced July 2014.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 91, 045304 (2015)

Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering

Authors: V. K. Guduru, A. McCollam, A. Jost, S. Wenderich, H. Hilgenkamp, J. C. Maan, A. Brinkman, U. Zeitler

Abstract: Magnetotransport measurements of charge carriers at the interface of a LaAlO3/SrTiO3 heterostructure with 26 unit cells of LaAlO3 show Hall resistance and magnetoresistance which at low and high temperatures is described by a single channel of electron-like charge carriers. At intermediate temperatures, we observe non-linear Hall resistance and positive magnetoresistance, establishing the presence… ▽ More Magnetotransport measurements of charge carriers at the interface of a LaAlO3/SrTiO3 heterostructure with 26 unit cells of LaAlO3 show Hall resistance and magnetoresistance which at low and high temperatures is described by a single channel of electron-like charge carriers. At intermediate temperatures, we observe non-linear Hall resistance and positive magnetoresistance, establishing the presence of at least two electron-like channels with significantly different mobilities and carrier concentrations. These channels are separated by 6 meV in energy and their temperature dependent occupation and mobilities are responsible for the observed transport properties of the interface. We observe that one of the channels has a mobility that decreases with decreasing temperature, consistent with magnetic scattering in this channel. △ Less

Submitted 22 November, 2013; originally announced November 2013.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 88, 241301(R) (2013)

Fine structure of the lowest Landau level in suspended trilayer graphene

Authors: H. J. van Elferen, A. Veligura, N. Tombros, E. V. Kurganova, B. J. van Wees, J. C. Maan, U. Zeitler

Abstract: Magneto-transport experiments on ABC-stacked suspended trilayer graphene reveal a complete splitting of the twelve-fold degenerated lowest Landau level, and, in particular, the opening of an exchange-driven gap at the charge neutrality point. A quantitative analysis of distinctness of the quantum Hall plateaus as a function of field yields a hierarchy of the filling factors: ν=6, 4, and 0 are the… ▽ More Magneto-transport experiments on ABC-stacked suspended trilayer graphene reveal a complete splitting of the twelve-fold degenerated lowest Landau level, and, in particular, the opening of an exchange-driven gap at the charge neutrality point. A quantitative analysis of distinctness of the quantum Hall plateaus as a function of field yields a hierarchy of the filling factors: ν=6, 4, and 0 are the most pronounced, followed by ν=3, and finally ν=1, 2 and 5. Apart from the appearance of a ν=4 state, which is probably caused by a layer asymmetry, this sequence is in agreement with Hund's rules for ABC-stacked trilayer graphene. △ Less

Submitted 3 April, 2013; originally announced April 2013.

Journal ref: Phys. Rev. B 88, 121302(R) (2013)

k.p subband structure of the LaAlO3/SrTiO3 interface

Authors: L. W. van Heeringen, G. A. de Wijs, A. McCollam, J. C. Maan, A. Fasolino

Abstract: Heterostructures made of transition metal oxides are new tailor-made materials which are attracting much attention. We have constructed a 6-band k.p Hamiltonian and used it within the envelope function method to calculate the subband structure of a variety of LaAlO3/SrTiO3 heterostructures. By use of density functional calculations, we determine the k.p parameters describing the conduction band ed… ▽ More Heterostructures made of transition metal oxides are new tailor-made materials which are attracting much attention. We have constructed a 6-band k.p Hamiltonian and used it within the envelope function method to calculate the subband structure of a variety of LaAlO3/SrTiO3 heterostructures. By use of density functional calculations, we determine the k.p parameters describing the conduction band edge of SrTiO3: the three effective mass parameters, L=0.6104 eV AA^2, M=9.73 eV AA^2, N=-1.616 eV AA^2, the spin orbit splitting Delta_SO=28.5 meV and the low temperature tetragonal distortion energy splitting Delta_T=2.1 meV. For confined systems we find strongly anisotropic non-parabolic subbands. As an application we calculate bands, density of states and magnetic energy levels and compare the results to Shubnikov-de Haas quantum oscillations observed in high magnetic fields. For typical heterostructures we find that electric field strength at the interface of F = 0.1 meV/AA for a carrier density of 7.2 10^{12} cm^-2 results in a subband structure that is similar to experimental results. △ Less

Submitted 8 January, 2014; v1 submitted 28 March, 2013; originally announced March 2013.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 88,205140 (2013)

Doubly-periodic instability pattern in a smectic A liquid crystal

Authors: O. V. Manyuhina, G. Tordini, W. Bras, J. C. Maan, P. C. M. Christianen

Abstract: We report the observation of a doubly-periodic surface defect-pattern in the liquid crystal 8CB, formed during the nematic--smectic A phase transition. The pattern results from the antagonistic alignment of the 8CB molecules, which is homeotropic at the surface and planar in the bulk of the sample cell. Within the continuum Landau-deGennes theory of smectic liquid crystals, we find that the long p… ▽ More We report the observation of a doubly-periodic surface defect-pattern in the liquid crystal 8CB, formed during the nematic--smectic A phase transition. The pattern results from the antagonistic alignment of the 8CB molecules, which is homeotropic at the surface and planar in the bulk of the sample cell. Within the continuum Landau-deGennes theory of smectic liquid crystals, we find that the long period (~10 μm) of the pattern is given by the balance between the surface anchoring and the elastic energy of curvature wall defects. The short period (~1 μm) we attribute to a saddle-splay distortion, leading to a non-zero Gaussian curvature and causing the curvature walls to break up. △ Less

Submitted 18 April, 2013; v1 submitted 15 February, 2013; originally announced February 2013.

Comments: revised version with references and connections added to attract attention of a broad readership

Report number: NORDITA-2013-12

Journal ref: Phys. Rev. E 87, 050501(R) (2013)

Quantized coexisting electrons and holes in graphene measured using temperature dependent magneto-transport

Authors: E. V. Kurganova, S. Wiedmann, A. J. M. Giesbers, R. V. Gorbachev, K. S. Novoselov, M. I. Katsnelson, T. Tudorovskiy, J. C. Maan, U. Zeitler

Abstract: We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental value $s \approx 20$ meV is considerably larger than in conventional semiconductors which implies a strong localization of charge carriers observable up to roo… ▽ More We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental value $s \approx 20$ meV is considerably larger than in conventional semiconductors which implies a strong localization of charge carriers observable up to room temperature. Surprisingly, in the quantized regime, the Hall resistivity overshoots the highest plateau values at high temperatures. We demonstrate by model calculations that such a peculiar behavior is expected in any system with coexisting electrons and holes when the energy spectrum is quantized and the carriers are partially localized. △ Less

Submitted 18 February, 2013; v1 submitted 8 February, 2013; originally announced February 2013.

Comments: 5 pages, 5 figures, corrected typo in author's name

Journal ref: Phys. Rev. B 87, 085447 (2013)

Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

Authors: V. K. Guduru, A. Granados del Aguila, S. Wenderich, M. K. Kruize, A. McCollam, P. C. M. Christianen, U. Zeitler, A. Brinkman, G. Rijnders, H. Hilgenkamp, J. C. Maan

Abstract: The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongl… ▽ More The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high-mobility electron channel in addition to a low-mobility electron channel which exists before illumination. △ Less

Submitted 20 November, 2012; originally announced November 2012.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 102, 051604 (2013)

Quantum oscillations and subband properties of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

Authors: A. McCollam, S. Wenderich, M. K. Kruize, V. K. Guduru, H. J. A. Molegraaf, M. Huijben, G. Koster, D. H. A. Blank, G. Rijnders, A. Brinkman, H. Hilgenkamp, U. Zeitler, J. C. Maan

Abstract: We have performed high field magnetotransport measurements to investigate the interface electron gas in LaAlO3/SrTiO3 heterostructures. Shubnikov-de Haas oscillations reveal several 2D conduction subbands with carrier effective masses between 1 and 3 m_e, quantum mobilities of order 3000 cm^2/V s, and band edges only a few millielectronvolts below the Fermi energy. Measurements in tilted magnetic… ▽ More We have performed high field magnetotransport measurements to investigate the interface electron gas in LaAlO3/SrTiO3 heterostructures. Shubnikov-de Haas oscillations reveal several 2D conduction subbands with carrier effective masses between 1 and 3 m_e, quantum mobilities of order 3000 cm^2/V s, and band edges only a few millielectronvolts below the Fermi energy. Measurements in tilted magnetic fields confirm the 2D character of the electron gas, and show evidence of inter-subband scattering. △ Less

Submitted 30 July, 2012; originally announced July 2012.

Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field

Authors: A. Veligura, H. J. van Elferen, N. Tombros, J. C. Maan, U. Zeitler, B. J. van Wees

Abstract: We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$Ω$s in the high carrier density regime to several M$Ω$s around the charge neutrality point (CNP). The corresponding transport gap is 8 meV at 0.3 K. The sequence of appearing quantum Hall plateaus at filling factor $ν=2$ followed by $ν=1$ suggests that the observed gap… ▽ More We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$Ω$s in the high carrier density regime to several M$Ω$s around the charge neutrality point (CNP). The corresponding transport gap is 8 meV at 0.3 K. The sequence of appearing quantum Hall plateaus at filling factor $ν=2$ followed by $ν=1$ suggests that the observed gap is caused by the symmetry breaking of the lowest Landau level. Investigation of the gap in a tilted magnetic field indicates that the resistance at the CNP shows a weak linear decrease for increasing total magnetic field. Those observations are in agreement with a spontaneous valley splitting at zero magnetic field followed by splitting of the spins originating from different valleys with increasing magnetic field. Both, the transport gap and $B$ field response point toward spin polarized layer antiferromagnetic state as a ground state in the bilayer graphene sample. The observed non-trivial dependence of the gap value on the normal component of $B$ suggests possible exchange mechanisms in the system. △ Less

Submitted 28 March, 2012; v1 submitted 8 February, 2012; originally announced February 2012.

Comments: 8 pages, 5 figures

Journal ref: Rhys. Rev. B (2012)

Field induced quantum-Hall ferromagnetism in suspended bilayer graphene

Authors: H. J. van Elferen, A. Veligura, E. V. Kurganova, U. Zeitler, J. C. Maan, N. Tombros, I. J. Vera-Marun, B. J. van Wees

Abstract: We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the ga… ▽ More We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point. △ Less

Submitted 27 February, 2012; v1 submitted 22 December, 2011; originally announced December 2011.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 85, 115408 (2012)

Coexistence of electron and hole transport in graphene

Authors: S. Wiedmann, H. J. van Elferen, E. V. Kurganova, M. I. Katsnelson, A. J . M. Giesbers, A. Veligura, B. J. van Wees, R. V. Gorbachev, K. S. Novoselov, J. C. Maan, U. Zeitler

Abstract: When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron… ▽ More When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at ν=0 made up by both electrons and holes. △ Less

Submitted 23 September, 2011; v1 submitted 20 July, 2011; originally announced July 2011.

Comments: 5 pages, 6 figures

Journal ref: Phys. Rev. B 84, 115314 (2011)

Spin splitting in graphene studied by means of tilted magnetic-field experiments

Authors: E. V. Kurganova, H. J. van Elferen, A. McCollam, L. A. Ponomarenko, K. S. Novoselov, A. Veligura, B. J. van Wees, J. C. Maan, U. Zeitler

Abstract: We have measured the spin splitting in single-layer and bilayer graphene by means of tilted magnetic field experiments. Applying the Lifshitz-Kosevich formula for the spin-induced decrease of the Shubnikov de Haas amplitudes with increasing tilt angle we directly determine the product between the carrier cyclotron mass m* and the effective g-factor g* as a function of the charge carrier concentrat… ▽ More We have measured the spin splitting in single-layer and bilayer graphene by means of tilted magnetic field experiments. Applying the Lifshitz-Kosevich formula for the spin-induced decrease of the Shubnikov de Haas amplitudes with increasing tilt angle we directly determine the product between the carrier cyclotron mass m* and the effective g-factor g* as a function of the charge carrier concentration. Using the cyclotron mass for a single-layer and a bilayer graphene we find an enhanced g-factor g* = 2.7 \pm 0.2 for both systems. △ Less

Submitted 21 September, 2011; v1 submitted 20 July, 2011; originally announced July 2011.

Journal ref: Phys. Rev. B 84, 121407(R) (2011)

Probing the surface states in Bi2Se3 using the Shubnikov-de Haas effect

Authors: M. Petrushevsky, E. Lahoud, A. Ron, E. Maniv, I. Diamant, I. Neder, S. Wiedmann, V. K. Guduru, F. Chiappini, U. Zeitler, J. C. Maan, K. Chashka, A. Kanigel, Y. Dagan

Abstract: Shubnikov-de Haas (SdH) oscillations are observed in Bi2Se3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass and Dingle temperature. The Fermi momentum obtained is in agreement with angle resolved photoemission spectroscopy (ARPES) measurements performed on crysta… ▽ More Shubnikov-de Haas (SdH) oscillations are observed in Bi2Se3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass and Dingle temperature. The Fermi momentum obtained is in agreement with angle resolved photoemission spectroscopy (ARPES) measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic field. The standard theoretical considerations fail to explain the observed behavior. △ Less

Submitted 16 July, 2012; v1 submitted 19 June, 2011; originally announced June 2011.

Comments: 6 pages, 8 figures. Accepted to Physical Review B

Journal ref: Phys. Rev. B 86, 045131 (2012)

Quantum Hall activation gaps in bilayer graphene

Authors: E. V. Kurganova, A. J. M. Giesbers, R. V. Gorbachev, A. K. Geim, K. S. Novoselov, J. C. Maan, U. Zeitler

Abstract: We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $ν=\pm4$ and $ν=\pm8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magn… ▽ More We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $ν=\pm4$ and $ν=\pm8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magnetic field. △ Less

Submitted 8 October, 2010; v1 submitted 28 September, 2010; originally announced September 2010.

Comments: 4 pages, accepted version (just removed a few typos), will appear as Fast Track Communication in Solid State Commun

Journal ref: Solid State Communications 150, 2209-2211 (2010)

Scaling of the quantum-Hall plateau-plateau transition in graphene

Authors: A. J. M. Giesbers, U. Zeitler, L. A. Ponomarenko, R. Yang, K. S. Novoselov, A. K. Geim, J. C. Maan

Abstract: The temperature dependence of the magneto-conductivity in graphene shows that the widths of the longitudinal conductivity peaks, for the N=1 Landau level of electrons and holes, display a power-law behavior following $Δν\propto T^κ$ with a scaling exponent $κ= 0.37\pm0.05$. Similarly the maximum derivative of the quantum Hall plateau transitions $(dσ_{xy}/dν)^{max}$ scales as $T^{-κ}$ with a sca… ▽ More The temperature dependence of the magneto-conductivity in graphene shows that the widths of the longitudinal conductivity peaks, for the N=1 Landau level of electrons and holes, display a power-law behavior following $Δν\propto T^κ$ with a scaling exponent $κ= 0.37\pm0.05$. Similarly the maximum derivative of the quantum Hall plateau transitions $(dσ_{xy}/dν)^{max}$ scales as $T^{-κ}$ with a scaling exponent $κ= 0.41\pm0.04$ for both the first and second electron and hole Landau level. These results confirm the universality of a critical scaling exponent. In the zeroth Landau level, however, the width and derivative are essentially temperature independent, which we explain by a temperature independent intrinsic length that obscures the expected universal scaling behavior of the zeroth Landau level. △ Less

Submitted 4 August, 2009; originally announced August 2009.

Journal ref: Physical Review B 80, 241411(R) (2009).

Gap opening in the zeroth Landau level of graphene

Authors: A. J. M. Giesbers, L. A. Ponomarenko, K. S. Novoselov, A. K. Geim, M. I. Katsnelson, J. C. Maan, U. Zeitler

Abstract: We have measured a strong increase of the low-temperature resistivity $ρ_{xx}$ and a zero-value plateau in the Hall conductivity $σ_{xy}$ at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transpo… ▽ More We have measured a strong increase of the low-temperature resistivity $ρ_{xx}$ and a zero-value plateau in the Hall conductivity $σ_{xy}$ at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in $ρ_{xx}$ and the anomalous $ν=0$ plateau in $σ_{xy}$ in terms of coexisting electrons and holes in the same spin-split zero-energy Landau level. △ Less

Submitted 6 April, 2009; originally announced April 2009.

Comments: 4 pages, 3 figures

Journal ref: Physical Review B 80, 201430(R) (2009).

Quantum resistance metrology in graphene

Authors: A. J. M. Giesbers, G. Rietveld, E. Houtzager, U. Zeitler, R. Yang, K. S. Novoselov, A. K. Geim, J. C. Maan

Abstract: We have performed a metrological characterization of the quantum Hall resistance in a 1 $μ$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $ν=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$Ω$ upto 2 $μ$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$ μ$A current) equal to th… ▽ More We have performed a metrological characterization of the quantum Hall resistance in a 1 $μ$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $ν=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$Ω$ upto 2 $μ$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$ μ$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied. △ Less

Submitted 22 October, 2008; originally announced October 2008.

Journal ref: Appl. Phys. Lett. 93, 222109 (2008)

Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface

Authors: M. van Zalk, J. Huijben, A. J. M. Giesbers, M. Huijben, U. Zeitler, J. C. Maan, W. G. van der Wiel, G. Rijnders, D. H. A. Blank, H. Hilgenkamp, A. Brinkman

Abstract: We present low-temperature and high-field magnetotransport data on SrTiO3-LaAlO3 interfaces. The resistance shows hysteresis in magnetic field and a logarithmic relaxation as a function of time. Oscillations in the magnetoresistance are observed, showing a square root periodicity in the applied magnetic field, both in large-area unstructured samples as well as in a structured sample. An explanat… ▽ More We present low-temperature and high-field magnetotransport data on SrTiO3-LaAlO3 interfaces. The resistance shows hysteresis in magnetic field and a logarithmic relaxation as a function of time. Oscillations in the magnetoresistance are observed, showing a square root periodicity in the applied magnetic field, both in large-area unstructured samples as well as in a structured sample. An explanation in terms of a commensurability condition of edge states in a highly mobile two-dimensional electron gas between substrate step edges is suggested. △ Less

Submitted 27 June, 2008; originally announced June 2008.

Nanolithography and manipulation of graphene using an atomic force microscope

Authors: A. J. M. Giesbers, U. Zeitler, S. Neubeck, F. Freitag, K. S. Novoselov, J. C. Maan

Abstract: We use an atomic force microscope (AFM) to manipulate graphene films on a nanoscopic length scale. By means of local anodic oxidation with an AFM we are able to structure isolating trenches into single-layer and few-layer graphene flakes, opening the possibility of tabletop graphene based device fabrication. Trench sizes of less than 30 nm in width are attainable with this technique. Besides oxi… ▽ More We use an atomic force microscope (AFM) to manipulate graphene films on a nanoscopic length scale. By means of local anodic oxidation with an AFM we are able to structure isolating trenches into single-layer and few-layer graphene flakes, opening the possibility of tabletop graphene based device fabrication. Trench sizes of less than 30 nm in width are attainable with this technique. Besides oxidation we also show the influence of mechanical peeling and scratching with an AFM of few layer graphene sheets placed on different substrates. △ Less

Submitted 5 June, 2008; v1 submitted 4 June, 2008; originally announced June 2008.

Comments: 11 pages text, 5 figures

Journal ref: Solid State Communications 147. 366-369 (2008)

Experimental imaging and atomistic modeling of electron and hole quasiparticle wave functions in InAs/GaAs quantum dots

Authors: G. Bester, D. Reuter, L. He, A. Zunger, P. Kailuweit, A. D. Wieck, U. Zeitler, J. C. Maan, O. Wibbelhoff, A. Lorke

Abstract: We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) pie… ▽ More We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) piezoelectricity on the confined carriers and (iv) observe a peculiar charging sequence of holes that violates the Aufbau principle. △ Less

Submitted 12 July, 2007; v1 submitted 12 July, 2007; originally announced July 2007.

Comments: Submitted to Physical Review B. A version of this paper with figures can be found at http://www.sst.nrel.gov/nano_pub/mts_preprint.pdf

Journal ref: Phys. Rev. B 76, 075338 (2007)

Quantum-Hall activation gaps in graphene

Authors: A. J. M. Giesbers, U. Zeitler, M. I. Katsnelson, L. A. Ponomarenko, T. M. G. Mohiuddin, J. C. Maan

Abstract: We have measured the quantum-Hall activation gaps in graphene at filling factors $ν=2$ and $ν=6$ for magnetic fields up to 32 T and temperatures from 4 K to 300 K. The $ν=6$ gap can be described by thermal excitation to broadened Landau levels with a width of 400 K. In contrast, the gap measured at $ν=2$ is strongly temperature and field dependent and approaches the expected value for sharp Land… ▽ More We have measured the quantum-Hall activation gaps in graphene at filling factors $ν=2$ and $ν=6$ for magnetic fields up to 32 T and temperatures from 4 K to 300 K. The $ν=6$ gap can be described by thermal excitation to broadened Landau levels with a width of 400 K. In contrast, the gap measured at $ν=2$ is strongly temperature and field dependent and approaches the expected value for sharp Landau levels for fields $B > 20$ T and temperatures $T > 100$ K. We explain this surprising behavior by a narrowing of the lowest Landau level. △ Less

Submitted 12 October, 2007; v1 submitted 19 June, 2007; originally announced June 2007.

Comments: 4 pages, 4 figures, updated version after review, accepted for PRL

Journal ref: Phys. Rev. Lett. 99, 206803 (2007)

Anharmonic magnetic deformation of self-assembled molecular nanocapsules

Authors: O. V. Manyuhina, I. O. Shklyarevskiy, P. Jonkheijm, P. C. M. Christianen, A. Fasolino, M. I. Katsnelson, A. P. H. J. Schenning, E. W. Meijer, O. Henze, A. F. M. Kilbinger, W. J. Feast, J. C. Maan

Abstract: High magnetic fields were used to deform spherical nanocapsules, self-assembled from bola-amphiphilic sexithiophene molecules. At low fields the deformation -- measured through linear birefringence -- scales quadratically with the capsule radius and with the magnetic field strength. These data confirm a long standing theoretical prediction (W. Helfrich, Phys. Lett. {\bf 43A}, 409 (1973)), and pe… ▽ More High magnetic fields were used to deform spherical nanocapsules, self-assembled from bola-amphiphilic sexithiophene molecules. At low fields the deformation -- measured through linear birefringence -- scales quadratically with the capsule radius and with the magnetic field strength. These data confirm a long standing theoretical prediction (W. Helfrich, Phys. Lett. {\bf 43A}, 409 (1973)), and permits the determination of the bending rigidity of the capsules as (2.6$\pm$0.8)$\times 10^{-21}$ J. At high fields, an enhanced rigidity is found which cannot be explained within the Helfrich model. We propose a complete form of the free energy functional that accounts for this behaviour, and allows discussion of the formation and stability of nanocapsules in solution. △ Less

Submitted 12 March, 2007; originally announced March 2007.

Comments: 4 pages, 3 figures, accepted in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 98, 146101 (2007)

Magnetic effects at the interface between nonmagnetic oxides

Authors: A. Brinkman, M. Huijben, M. van Zalk, J. Huijben, U. Zeitler, J. C. Maan, W. G. van der Wiel, G. Rijnders, D. H. A. Blank, H. Hilgenkamp

Abstract: The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at the interface between the otherwise nonmagnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, toget… ▽ More The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at the interface between the otherwise nonmagnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, together with a logarithmic temperature dependence of the sheet resistance. At low temperatures, the sheet resistance reveals magnetic hysteresis. Magnetic ordering is a key issue in solid-state science and its underlying mechanisms are still the subject of intense research. In particular, the interplay between localized magnetic moments and the spin of itinerant conduction electrons in a solid gives rise to intriguing many-body effects such as Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, the Kondo effect, and carrier-induced ferromagnetism in diluted magnetic semiconductors. The conducting oxide interface now provides a versatile system to induce and manipulate magnetic moments in otherwise nonmagnetic materials. △ Less

Submitted 4 June, 2007; v1 submitted 1 March, 2007; originally announced March 2007.

Comments: Nature Materials, July issue

Room-Temperature Quantum Hall Effect in Graphene

Authors: K. S. Novoselov, Z. Jiang, Y. Zhang, S. V. Morozov, H. L. Stormer, U. Zeitler, J. C. Maan, G. S. Boebinger, P. Kim, A. K. Geim

Abstract: The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed… ▽ More The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed at liquid-helium temperatures. Here, we show that in graphene - a single atomic layer of carbon - the QHE can reliably be measured even at room temperature, which is not only surprising and inspirational but also promises QHE resistance standards becoming available to a broader community, outside a few national institutions. △ Less

Submitted 17 February, 2007; originally announced February 2007.

Comments: Published in Science online 15 February 2007

Journal ref: Science 315, 1379 (2007).

Definitive observation of the dark triplet ground state of charged excitons in high magnetic fields

Authors: G. V. Astakhov, D. R. Yakovlev, V. V. Rudenkov, P. C. M. Christianen, T. Barrick, S. A. Crooker, A. B. Dzyubenko, W. Ossau, J. C. Maan, G. Karczewski, T. Wojtowicz

Abstract: The ground state of negatively charged excitons (trions) in high magnetic fields is shown to be a dark triplet state, confirming long-standing theoretical predictions. Photoluminescence (PL), reflection, and PL excitation spectroscopy of CdTe quantum wells reveal that the dark triplet trion has lower energy than the singlet trion above 24 Tesla. The singlet-triplet crossover is "hidden" (i.e., t… ▽ More The ground state of negatively charged excitons (trions) in high magnetic fields is shown to be a dark triplet state, confirming long-standing theoretical predictions. Photoluminescence (PL), reflection, and PL excitation spectroscopy of CdTe quantum wells reveal that the dark triplet trion has lower energy than the singlet trion above 24 Tesla. The singlet-triplet crossover is "hidden" (i.e., the spectral lines themselves do not cross due to different Zeeman energies), but is confirmed by temperature-dependent PL above and below 24 T. The data also show two bright triplet states. △ Less

Submitted 30 March, 2005; originally announced March 2005.

Comments: 4 figures

Journal ref: Phys. Rev. B 71, 201312(R) (2005)

Coulomb-interaction induced incomplete shell filling in the hole system of InAs quantum dots

Authors: D. Reuter, P. Kailuweit, A. D. Wieck, U. Zeitler, O. S. Wibbelhoff, C. Meier, A. Lorke, J. C. Maan

Abstract: We have studied the hole charging spectra of self-assembled InAs quantum dots in perpendicular magnetic fields by capacitance-voltage spectroscopy. From the magnetic field dependence of the individual peaks we conclude that the s-like ground state is completely filled with two holes but that the fourfold degenerate p-shell is only half filled with two holes before the filling of the d-shell star… ▽ More We have studied the hole charging spectra of self-assembled InAs quantum dots in perpendicular magnetic fields by capacitance-voltage spectroscopy. From the magnetic field dependence of the individual peaks we conclude that the s-like ground state is completely filled with two holes but that the fourfold degenerate p-shell is only half filled with two holes before the filling of the d-shell starts. The resulting six-hole ground state is highly polarized. This incomplete shell filling can be explained by the large influence of the Coulomb interaction in this system. △ Less

Submitted 8 January, 2005; originally announced January 2005.

Comments: Accepted for publication in Physical Review Letters

Dynamics of liquid crystalline domains in magnetic field

Authors: G. Tordini, P. C. M. Christianen, J. C. Maan

Abstract: We study microscopic single domains nucleating and growing within the coexistence region of the Isotropic (I) and Nematic (N) phases in magnetic field. By rapidly switching on the magnetic field the time needed to align the nuclei of sufficiently large size is measured, and is found to decrease with the square of the magnetic field. When the field is removed the disordering time is observed to l… ▽ More We study microscopic single domains nucleating and growing within the coexistence region of the Isotropic (I) and Nematic (N) phases in magnetic field. By rapidly switching on the magnetic field the time needed to align the nuclei of sufficiently large size is measured, and is found to decrease with the square of the magnetic field. When the field is removed the disordering time is observed to last on a longer time scale. The growth rate of the nematic domains at constant temperature within the coexistence region is found to increase when a magnetic field is applied. △ Less

Submitted 25 October, 2004; v1 submitted 10 August, 2004; originally announced August 2004.

Comments: 10 pages, 5 figures, unpublished

Magnetization of a two-dimensional electron gas with a second filled subband

Authors: M. R. Schaapman, U. Zeitler, P. C. M. Christianen, J. C. Maan, D. Reuter, A. D. Wieck, D. Schuh, M. Bichler

Abstract: We have measured the magnetization of a dual-subband two-dimensional electron gas, confined in a GaAs/AlGaAs heterojunction. In contrast to two-dimensional electron gases with a single subband, we observe non-1/B-periodic, triangularly shaped oscillations of the magnetization with an amplitude significantly less than $1 μ_{\mathrm{B}}^*$ per electron. All three effects are explained by a field d… ▽ More We have measured the magnetization of a dual-subband two-dimensional electron gas, confined in a GaAs/AlGaAs heterojunction. In contrast to two-dimensional electron gases with a single subband, we observe non-1/B-periodic, triangularly shaped oscillations of the magnetization with an amplitude significantly less than $1 μ_{\mathrm{B}}^*$ per electron. All three effects are explained by a field dependent self-consistent model, demonstrating the shape of the magnetization is dominated by oscillations in the confining potential. Additionally, at 1 K, we observe small oscillations at magnetic fields where Landau-levels of the two different subbands cross. △ Less

Submitted 25 August, 2003; originally announced August 2003.

Comments: 4 pages, 4 figures

Journal ref: Physical Review B 68, 193308 (2003)

Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2

Authors: J. G. S. Lok, A. K. Geim, B. Tieke, J. C. Maan, S. T. Stoddart, R. J. Hyndman, B. L. Gallagher, M. Henini

Abstract: We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is att… ▽ More We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is attributed to presence of the theoretically predicted magnetic ordering at even integer filling factors which causes the formation of macroscopic spin-charge domains. △ Less

Submitted 24 April, 1998; v1 submitted 23 April, 1998; originally announced April 1998.

Comments: 3 pages, 4 figures, uses rotating, uses epsfig

Report number: QHE-98-1