Epitaxial hexagonal boron nitride for hydrogen generation by radiolysis of interfacial water
Authors:
Johannes Binder,
Aleksandra Krystyna Dąbrowska,
Mateusz Tokarczyk,
Katarzyna Ludwiczak,
Rafał Bożek,
Grzegorz Kowalski,
Roman Stępniewski,
Andrzej Wysmołek
Abstract:
Hydrogen is an important building block in global strategies towards a future green energy system. To make this transition possible, intense scientific efforts are needed, also in the field of materials science. Two-dimensional crystals, such as hexagonal boron nitride (hBN), are very promising in this regard, as it was demonstrated that micrometer-sized exfoliated flakes are excellent barriers to…
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Hydrogen is an important building block in global strategies towards a future green energy system. To make this transition possible, intense scientific efforts are needed, also in the field of materials science. Two-dimensional crystals, such as hexagonal boron nitride (hBN), are very promising in this regard, as it was demonstrated that micrometer-sized exfoliated flakes are excellent barriers to molecular hydrogen. However, it remains an open question whether large-area layers fabricated by industrially relevant methods preserve such promising properties. In this work we show that electron beam-induced splitting of water creates hBN bubbles that effectively store molecular hydrogen for weeks and under extreme mechanical deformation. We demonstrate that epitaxial hBN allows direct visualization and monitoring of the process of hydrogen generation by radiolysis of interfacial water. Our findings show that hBN is not only a potential candidate for hydrogen storage, but also holds promise for the development of unconventional hydrogen production schemes.
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Submitted 23 October, 2022;
originally announced November 2022.
Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres
Authors:
Katarzyna Ludwiczak,
Aleksandra Krystyna Dąbrowska,
Johannes Binder,
Mateusz Tokarczyk,
Jakub Iwański,
Bogusława Kurowska,
Jakub Turczyński,
Grzegorz Kowalski,
Rafał Bożek,
Roman Stępniewski,
Wojciech Pacuski,
Andrzej Wysmołek
Abstract:
Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can be observed for such monolayers, however only for materials of sufficient crystalline quality, so far mostly available in the form of micrometer-sized flakes. A…
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Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can be observed for such monolayers, however only for materials of sufficient crystalline quality, so far mostly available in the form of micrometer-sized flakes. A further significant improvement of optical and electrical properties can be achieved by transferring the TMD on hexagonal boron nitride (hBN). To exploit the full potential of TMDs in future applications, epitaxial techniques have to be developed that not only allow to growlarge-scale, high-quality TMD monolayers, but allow to perform the growth directly on large-scale epitaxial hBN. In this work we address this problem and demonstrate that MoSe2 of high optical quality can be directly grown on epitaxial hBN on an entire two-inch wafer. We developed a combined growth theme for which hBN is first synthesized at high temperature by Metal Organic Vapor Phase Epitaxy (MOVPE) and as a second step MoSe2 is deposited on top by Molecular Beam Epitaxy (MBE) at much lower temperatures. We show that this structure exhibits excellent optical properties, manifested by narrow excitonic lines in the photoluminescence spectra. Moreover, the material is homogeneous on the area of the whole two-inch wafer, with only +/-0.14 meV deviation of excitonic energy. Our mixed growth technique may guide the way for future large-scale production of high quality TMD/hBN heterostructures.
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Submitted 4 September, 2021;
originally announced September 2021.
