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Broadband miniaturized spectrometers with a van der Waals tunnel diode
Authors:
MD Gius Uddin,
Susobhan Das,
Abde Mayeen Shafi,
Lei Wang,
Xiaoqi Cui,
Fedor Nigmatulin,
Faisal Ahmed,
Andreas C. Liapis,
Weiwei Cai,
Zongyin Yang,
Harri Lipsanen,
Tawfique Hasan,
Hoon Hahn Yoon,
Zhipei Sun
Abstract:
Miniaturized spectrometers are of immense interest for various on-chip and implantable photonic and optoelectronic applications. State-of-the-art conventional spectrometer designs rely heavily on bulky dispersive components (such as gratings, photodetector arrays, and interferometric optics) to capture different input spectral components that increase their integration complexity. Here, we report…
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Miniaturized spectrometers are of immense interest for various on-chip and implantable photonic and optoelectronic applications. State-of-the-art conventional spectrometer designs rely heavily on bulky dispersive components (such as gratings, photodetector arrays, and interferometric optics) to capture different input spectral components that increase their integration complexity. Here, we report a high-performance broadband spectrometer based on a simple and compact van der Waals heterostructure diode, leveraging a careful selection of active van der Waals materials -- molybdenum disulfide and black phosphorus, their electrically tunable photoresponse, and advanced computational algorithms for spectral reconstruction. We achieve remarkably high peak wavelength accuracy of ~2 nanometers, and broad operation bandwidth spanning from ~500 to 1600 nanometers in a device with a ~30x20 μm2 footprint. This diode-based spectrometer scheme with broadband operation offers an attractive pathway for various applications, such as sensing, surveillance and spectral imaging.
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Submitted 2 January, 2024;
originally announced January 2024.
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Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopy
Authors:
Yadong Wang,
Fadil Iyikanat,
Habib Rostami,
Xueyin Bai,
Xuerong Hu,
Susobhan Das,
Yunyun Dai,
Luojun Du,
Yi Zhang,
Shisheng Li,
Harri Lipsanen,
F. Javier García de Abajo,
Zhipei Sun
Abstract:
Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, we probe various relevant electronic states in monolayer MoS2, such as multiple excitonic Rydberg states and free-particle energy bands, with a high relative contrast of up to >200 via broadband (from ~1.79 to 3.10 eV) static third-harmonic spectroscopy, which is further supported…
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Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, we probe various relevant electronic states in monolayer MoS2, such as multiple excitonic Rydberg states and free-particle energy bands, with a high relative contrast of up to >200 via broadband (from ~1.79 to 3.10 eV) static third-harmonic spectroscopy, which is further supported by theoretical calculations. Moreover, we introduce transient third-harmonic spectroscopy to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ~94% at ~2.18 eV, providing direct evidence of dominant carrier relaxation processes, associated with carrier-exciton and carrier-phonon interactions. Our results indicate that static and transient third-harmonic spectroscopies are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.
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Submitted 13 July, 2022;
originally announced July 2022.
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Enhanced Tunnelling in a Hybrid of Single-Walled Carbon Nanotubes and Graphene
Authors:
Yongping Liao,
Kimmo Mustonen,
Semir Tulic,
Viera Skakalova,
Sabbir A. Khan,
Patrik Laiho,
Qiang Zhang,
Changfeng Li,
Mohammad R. A. Monazam,
Jani Kotakoski,
Harri Lipsanen,
Esko I. Kauppinen
Abstract:
Transparent and conductive films (TCFs) are of great technological importance. The high transmittance, electrical conductivity and mechanical strength make single-walled carbon nanotubes (SWCNTs) a good candidate for their raw material. Despite the ballistic transport in individual SWCNTs, however, the electrical conductivity of their networks is limited by low efficiency of charge tunneling betwe…
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Transparent and conductive films (TCFs) are of great technological importance. The high transmittance, electrical conductivity and mechanical strength make single-walled carbon nanotubes (SWCNTs) a good candidate for their raw material. Despite the ballistic transport in individual SWCNTs, however, the electrical conductivity of their networks is limited by low efficiency of charge tunneling between the tube elements. Here, we demonstrate that the nanotube network sheet resistance at high optical transmittance is decreased by more than 50% when fabricated on graphene and thus provides a comparable improvement as widely adopted gold chloride ($\mathrm{AuCl_3}$) doping. However, while Raman spectroscopy reveals substantial changes in spectral features of doped nanotubes, no similar effect is observed in presence of graphene. Instead, temperature dependent transport measurements indicate that graphene substrate reduces the tunneling barrier heights while its parallel conductivity contribution is almost negligible. Finally, we show that combining the graphene substrate and $\mathrm{AuCl_3}$ doping, the SWCNT thin films can exhibit sheet resistance as low as 36 $Ω$/sq. at 90% transmittance.
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Submitted 15 March, 2019;
originally announced March 2019.
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Optical harmonic generation in monolayer group-VI transition metal dichalcogenides
Authors:
Anton Autere,
Henri Jussila,
Andrea Marini,
J. R. M. Saavedra,
Yunyun Dai,
Antti Saynatjoki,
Lasse Karvonen,
He Yang,
Babak Amirsolaimani,
Robert A. Norwood,
Nasser Peyghambarian,
Harri Lipsanen,
Khanh Kieu,
Francisco J. Garcia de Abajo,
Zhipei Sun
Abstract:
Monolayer transition metal dichalcogenides (TMDs) exhibit high nonlinear optical (NLO) susceptibilities. Experiments on MoS$_2$ have indeed revealed very large second-order ($χ^{(2)}$) and third-order ($χ^{(3)}$) optical susceptibilities. However, third harmonic generation results of other layered TMDs has not been reported. Furthermore, the reported $χ^{(2)}$ and $χ^{(3)}$ of MoS$_2$ vary by seve…
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Monolayer transition metal dichalcogenides (TMDs) exhibit high nonlinear optical (NLO) susceptibilities. Experiments on MoS$_2$ have indeed revealed very large second-order ($χ^{(2)}$) and third-order ($χ^{(3)}$) optical susceptibilities. However, third harmonic generation results of other layered TMDs has not been reported. Furthermore, the reported $χ^{(2)}$ and $χ^{(3)}$ of MoS$_2$ vary by several orders of magnitude, and a reliable quantitative comparison of optical nonlinearities across different TMDs has remained elusive. Here, we investigate second- and third-harmonic generation, and three-photon photoluminescence in TMDs. Specifically, we present an experimental study of $χ^{(2)}$, and $χ^{(3)}$ of four common TMD materials (\ce{MoS2}, \ce{MoSe2}, \ce{WS2} and \ce{WSe2}) by placing different TMD flakes in close proximity to each other on a common substrate, allowing their NLO properties to be accurately obtained from a single measurement. $χ^{(2)}$ and $χ^{(3)}$ of the four monolayer TMDs have been compared, indicating that they exhibit distinct NLO responses. We further present theoretical simulations of these susceptibilities in qualitative agreement with the measurements. Our comparative studies of the NLO responses of different two-dimensional layered materials allow us to select the best candidates for atomic-scale nonlinear photonic applications, such as frequency conversion and all-optical signal processing.
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Submitted 6 September, 2018; v1 submitted 28 August, 2018;
originally announced August 2018.
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Low-power continuous-wave second harmonic generation in semiconductor nanowires
Authors:
Qingchen Yuan,
Liang Fang,
He Yang,
Xuetao Gan,
Vladislav Khayrudinov,
Harri Lipsanen,
Zhipei Sun,
Jianlin Zhao
Abstract:
Semiconductor nanowires (NWs) are promising for realizing various on-chip nonlinear optical devices, due to their nanoscale lateral confinement and strong light-matter interaction. However, high-intensity pulsed pump lasers are typically needed to exploit their optical nonlinearity because light couples poorly with nanometric-size wires. Here, we demonstrate microwatts continuous-wave light pumped…
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Semiconductor nanowires (NWs) are promising for realizing various on-chip nonlinear optical devices, due to their nanoscale lateral confinement and strong light-matter interaction. However, high-intensity pulsed pump lasers are typically needed to exploit their optical nonlinearity because light couples poorly with nanometric-size wires. Here, we demonstrate microwatts continuous-wave light pumped second harmonic generation (SHG) in AlGaAs NWs by integrating them with silicon planar photonic crystal cavities. Light-NW coupling is enhanced effectively by the extremely localized cavity mode at the subwavelength scale. Strong SHG is obtained even with a continuous-wave laser excitation with a pump power down to ~3 uW, and the cavity-enhancement factor is estimated around 150. Additionally, in the integrated device, the NW's SHG is more than two-order of magnitude stronger than third harmonic generations in the silicon slab, though the NW only couple s with less than 1% of the cavity mode. This significantly reduced power-requirement of NW's nonlinear frequency conversion would promote NW-based building blocks for nonlinear optics, specially in chip-integrated coherent light sources, entangled photon-pairs and signal processing devices.
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Submitted 14 August, 2018;
originally announced August 2018.
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Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
Authors:
Pedro C. Feijoo,
Francisco Pasadas,
José M. Iglesias,
María J. Martín,
Raúl Rengel,
Changfeng Li,
Wonjae Kim,
Juha Riikonen,
Harri Lipsanen,
David Jiménez
Abstract:
The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field effect transistors (GFETs) to get a competitive radio frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte C…
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The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field effect transistors (GFETs) to get a competitive radio frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc.). This information is fed into a self consistent simulator, which solves the drift diffusion equation coupled with the two dimensional Poisson's equation to take full account of short channel effects. Simulated GFET characteristics were benchmarked against experimental data from our fabricated devices. Our simulations show that scalability is supposed to bring to RF performance an improvement that is, however, highly limited by instability. Despite the possibility of a lower performance, a careful choice of the bias point can avoid instability. Nevertheless, maximum oscillation frequencies are still achievable in the THz region for channel lengths of a few hundreds of nanometers.
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Submitted 4 October, 2017; v1 submitted 28 April, 2017;
originally announced May 2017.
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Direct Observation of Acoustic Phonon Confinement in Free-Standing Semiconductor Nanowires
Authors:
Fariborz Kargar,
Bishwajit Debnath,
Kakko Joona-Pekko,
Antti Saynatjoki,
Harri Lipsanen,
Denis Nika,
Roger Lake,
Alexander A. Balandin
Abstract:
Similar to electron waves, the phonon states in semiconductors can undergo changes induced by external boundaries. Modification of acoustic phonon spectrum in structures with periodically modulated elastic constant or mass density - referred to as phononic crystals - has been proven experimentally and utilized in practical applications. A possibility of modifying acoustic phonon spectrum in indivi…
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Similar to electron waves, the phonon states in semiconductors can undergo changes induced by external boundaries. Modification of acoustic phonon spectrum in structures with periodically modulated elastic constant or mass density - referred to as phononic crystals - has been proven experimentally and utilized in practical applications. A possibility of modifying acoustic phonon spectrum in individual nanostructures via spatial confinement would bring tremendous benefits for controlling phonon-electron interaction and thermal conduction at nanoscale. However, despite strong scientific and practical importance, conclusive experimental evidence of acoustic phonon confinement in individual free-standing nanostructures, e.g. nanowires, is still missing. The length scale, at which phonon dispersion undergoes changes and a possibility of the phonon group velocity reduction, are debated. Here, we utilize specially designed high-quality GaAs nanowires (NWs) with different diameters, D, and large inter-nanowire distances to directly demonstrate acoustic phonon confinement. The measurements conducted with Brillouin - Mandelstam spectroscopy reveal confined phonon polarization branches with frequencies from 4 GHz to 40 GHz in NWs with D as large as ~128 nm, i.e. at length scale, which exceeds the "grey" phonon mean-free path in GaAs by an almost an order of magnitude. The phonon dispersion modification and phonon energy scaling with D in individual nanowires are in excellent agreement with theory. The obtained results can lead to more efficient nanoscale control of acoustic phonons, with benefits for nanoelectronics, thermoelectric energy conversion, thermal management, and novel spintronic technologies.
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Submitted 29 August, 2016;
originally announced August 2016.
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Ultra-strong nonlinear optical processes and trigonal warping in MoS$_2$ layers
Authors:
A. Säynätjoki,
L. Karvonen,
H. Rostami,
A. Autere,
S. Mehravar,
A. Lombardo,
R. A. Norwood,
T. Hasan,
N. Peyghambarian,
H. Lipsanen,
K. Kieu,
A. C. Ferrari,
M. Polini,
Z. Sun
Abstract:
We report ultra-strong high-order nonlinear multiphoton processes in monolayer MoS$_2$ (1L-MoS$_2$): the third harmonic is thirty times stronger than the second harmonic, and the fourth harmonic is comparable to the second harmonic. We find that second and third harmonic processes are strongly dependent on elliptical polarization, which can be used to selectively tune harmonic generation with diff…
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We report ultra-strong high-order nonlinear multiphoton processes in monolayer MoS$_2$ (1L-MoS$_2$): the third harmonic is thirty times stronger than the second harmonic, and the fourth harmonic is comparable to the second harmonic. We find that second and third harmonic processes are strongly dependent on elliptical polarization, which can be used to selectively tune harmonic generation with different orders. We explain this by calculating the nonlinear response functions of 1L-MoS$_2$ with a continuum-model Hamiltonian and quantum-mechanical diagrammatic perturbation theory, highlighting the crucial role of trigonal warping. A similar effect is expected for all other transition-metal dichalcogenides. Our results pave the way for efficient and tunable harmonic generation based on layered materials for various applications, including microscopy and imaging
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Submitted 14 August, 2016;
originally announced August 2016.
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A physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data
Authors:
Ferney A. Chaves,
David Jiménez,
Abhay A. Sagade,
Wonjae Kim,
Juha Riikonen,
Harri Lipsanen,
Daniel Neumaier
Abstract:
The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential tunneling of carriers between the 3D-metal and 2D-graphene underneath followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic…
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The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential tunneling of carriers between the 3D-metal and 2D-graphene underneath followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical doping. Our results agree with experimental results for several metals.
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Submitted 30 July, 2015;
originally announced July 2015.
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Broadband laser polarization control with aligned carbon nanotubes
Authors:
He Yang,
Bo Fua,
Diao Lia,
Ya Chen,
Marco Mattila,
Ying Tian,
Zhenzhong Yong,
Changxi Yang,
Ilkka Tittonen,
Zhaoyu Ren,
Jingtao Bai,
Qingwen Li,
Esko I. Kauppinen,
Harri Lipsanen,
Zhipei Sun
Abstract:
We introduce a simple approach to fabricate aligned carbon nanotube (ACNT) device for broadband polarization control in fiber laser systems. The ACNT device was fabricated by pulling from as-fabricated vertically-aligned carbon nanotube arrays. Their anisotropic property is confirmed with optical and scanning electron microscopy, and with polarized Raman and absorption spectroscopy. The device was…
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We introduce a simple approach to fabricate aligned carbon nanotube (ACNT) device for broadband polarization control in fiber laser systems. The ACNT device was fabricated by pulling from as-fabricated vertically-aligned carbon nanotube arrays. Their anisotropic property is confirmed with optical and scanning electron microscopy, and with polarized Raman and absorption spectroscopy. The device was then integrated into fiber laser systems (at two technologically important wavelengths of 1 and 1.5 um) for polarization control. We obtained a linearly-polarized light output with the maximum extinction ratio of ~12 dB. The output polarization direction could be fully controlled by the ACNT alignment direction in both lasers. To the best of our knowledge, this is the first time that ACNT device is applied to polarization control in laser systems. Our results exhibit that the ACNT device is a simple, low-cost, and broadband polarizer to control laser polarization dynamics, for various photonic applications (such as material processing, polarization diversity detection in communications), where the linear polarization control is necessary.
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Submitted 13 May, 2015;
originally announced May 2015.
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Ultrafast pulse generation with black phosphorus
Authors:
Diao Li,
Henri Jussila,
Lasse Karvonen,
Guojun Ye,
Harri Lipsanen,
Xianhui Chen,
Zhipei Sun
Abstract:
Black phosphorus has been recently rediscovered as a new and interesting two-dimensional material due to its unique electronic and optical properties. Here, we study the linear and nonlinear optical properties of black phosphorus thin films, indicating that both linear and nonlinear optical properties are anisotropic and can be tuned by the film thickness. Then we employ the nonlinear optical prop…
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Black phosphorus has been recently rediscovered as a new and interesting two-dimensional material due to its unique electronic and optical properties. Here, we study the linear and nonlinear optical properties of black phosphorus thin films, indicating that both linear and nonlinear optical properties are anisotropic and can be tuned by the film thickness. Then we employ the nonlinear optical property of black phosphorus for ultrafast (pulse duration down to ~786 fs in mode-locking) and large-energy (pulse energy up to >18 nJ in Q-switching) pulse generation in fiber lasers at the near-infrared telecommunication band ~1.5 μm. Our results underscore relatively large optical nonlinearity in black phosphorus and its prospective for ultrafast pulse generation, paving the way to black phosphorus based nonlinear and ultrafast photonics applications (e.g., ultrafast all-optical switches/modulators, frequency converters etc.).
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Submitted 3 May, 2015;
originally announced May 2015.
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Processing and characterization of epitaxial GaAs radiation detectors
Authors:
X. Wu,
T. Peltola,
T. Arsenovich,
A. Gädda,
J. Härkönen,
A. Junkes,
A. Karadzhinova,
P. Kostamo,
H. Lipsanen,
P. Luukka,
M. Mattila,
S. Nenonen,
T. Riekkinen,
E. Tuominen,
A. Winkler
Abstract:
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase…
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GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 $μ\textrm{m}$/h. The GaAs p$^+$/i/n$^+$ detectors were characterized by Capacitance Voltage ($CV$), Current Voltage ($IV$), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage ($V_{\textrm{fd}}$) of the detectors with 110 $μ\textrm{m}$ epi-layer thickness is in the range of 8 V - 15 V and the leakage current density is about 10 nA/cm$^2$. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.
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Submitted 13 March, 2015;
originally announced March 2015.
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Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation
Authors:
Stefan Völk,
Florian J. R. Schülein,
Florian Knall,
Achim Wixforth,
Hubert. J. Krenner,
Arne Laucht,
Jonathan J. Finley,
Juha Riikonen,
Marco Mattila,
Markku Sopanen,
Harri Lipsanen,
Jun He,
Tuan A. Truong,
Hyochul Kim,
Pierre M. Petroff
Abstract:
We report on recent progress towards single photon sources based on quantum dot and quantum post nanostructures which are manipulated using surface acoustic waves. For this concept acoustic charge conveyance in a quantum well is used to spatially separate electron and hole pairs and transport these in the plane of the quantum well. When conveyed to the location of a quantum dot or quantum post the…
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We report on recent progress towards single photon sources based on quantum dot and quantum post nanostructures which are manipulated using surface acoustic waves. For this concept acoustic charge conveyance in a quantum well is used to spatially separate electron and hole pairs and transport these in the plane of the quantum well. When conveyed to the location of a quantum dot or quantum post these carriers are sequentially captured into the confined levels. Their radiative decays gives rise to the emission of a train of single photons. Three different approaches using (i) strain- induced and (ii) self-assembled quantum dots, and (iii) self-assembled quantum posts are discussed and their application potential is discussed. First devices and initial experiments towards the realization of such an acoustically driven single photon source are presented and remote acoustically triggered injection into few individual emitters is demonstrated.
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Submitted 23 November, 2010;
originally announced November 2010.
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Cascaded exciton emission of an individual strain-induced quantum dot
Authors:
F. J. R. Schülein,
A. Laucht,
J. Riikonen,
M. Mattila,
M. Sopanen,
H. Lipsanen,
J. J. Finley,
A. Wixforth,
H. J. Krenner
Abstract:
Single strain-induced quantum dots are isolated for optical experiments by selective removal of the inducing InP islands from the sample surface. Unpolarized emission of single, bi- and triexciton transitions are identified by power-dependent photoluminescence spectroscopy. Employing time-resolved experiments performed at different excitation powers we find a pronounced shift of the rise and dec…
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Single strain-induced quantum dots are isolated for optical experiments by selective removal of the inducing InP islands from the sample surface. Unpolarized emission of single, bi- and triexciton transitions are identified by power-dependent photoluminescence spectroscopy. Employing time-resolved experiments performed at different excitation powers we find a pronounced shift of the rise and decay times of these different transitions as expected from cascaded emission. Good agreement is found for a rate equation model for a three step cascade.
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Submitted 12 August, 2009;
originally announced August 2009.
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Efficient light coupling into a photonic crystal waveguide with flatband slow mode
Authors:
A. Säynätjoki,
K. Vynck,
M. Mulot,
D. Cassagne,
J. Ahopelto,
H. Lipsanen
Abstract:
We design an efficient coupler to transmit light from a strip waveguide into the flatband slow mode of a photonic crystal waveguide with ring-shaped holes. The coupler is a section of a photonic crystal waveguide with a higher group velocity, obtained by different ring dimensions. We demonstrate coupling efficiency in excess of 95% over the 8 nm wavelength range where the photonic crystal wavegu…
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We design an efficient coupler to transmit light from a strip waveguide into the flatband slow mode of a photonic crystal waveguide with ring-shaped holes. The coupler is a section of a photonic crystal waveguide with a higher group velocity, obtained by different ring dimensions. We demonstrate coupling efficiency in excess of 95% over the 8 nm wavelength range where the photonic crystal waveguide exhibits a quasi constant group velocity vg = c/37. An analysis based on the small Fabry-Pérot resonances in the simulated transmission spectra is introduced and used for studying the effect of the coupler length and for evaluating the coupling efficiency in different parts of the coupler. The mode conversion efficiency within the coupler is more than 99.7% over the wavelength range of interest. The parasitic reflectance in the coupler, which depends on the propagation constant mismatch between the slow mode and the coupler mode, is lower than 0.6% within this wavelength range.
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Submitted 21 January, 2008;
originally announced January 2008.
