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Energetic Analysis of Emerging Quantum Communication Protocols
Authors:
Raja Yehia,
Yoann Piétri,
Carlos Pascual-García,
Pascal Lefebvre,
Federico Centrone
Abstract:
With the rapid development and early industrialization of quantum technologies, it is of great interest to analyze their overall energy consumption before planning for their wide-scale deployments. The evaluation of the total energy requirements of quantum networks is a challenging task: different networks require very disparate techniques to create, distribute, manipulate, detect, and process qua…
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With the rapid development and early industrialization of quantum technologies, it is of great interest to analyze their overall energy consumption before planning for their wide-scale deployments. The evaluation of the total energy requirements of quantum networks is a challenging task: different networks require very disparate techniques to create, distribute, manipulate, detect, and process quantum signals. This paper aims to lay the foundations of a framework to model the energy requirements of different quantum technologies and protocols applied to near-term quantum networks. Different figures of merit are discussed and a benchmark on the energy consumption of bipartite and multipartite network protocols is presented. An open-source software to estimate the energy consumption of photonic setups is also provided.
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Submitted 14 October, 2024;
originally announced October 2024.
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Realizing a Compact, High-Fidelity, Telecom-Wavelength Source of Multipartite Entangled Photons
Authors:
Laura dos Santos Martins,
Nicolas Laurent-Puig,
Pascal Lefebvre,
Simon Neves,
Eleni Diamanti
Abstract:
Multipartite entangled states are an essential building block for advanced quantum networking applications. Realizing such tasks in practice puts stringent requirements on the characteristics of the states in terms of fidelity and generation rate, along with a desired compatibility with telecommunication network deployment. Here, we demonstrate a photonic platform design capable of producing high-…
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Multipartite entangled states are an essential building block for advanced quantum networking applications. Realizing such tasks in practice puts stringent requirements on the characteristics of the states in terms of fidelity and generation rate, along with a desired compatibility with telecommunication network deployment. Here, we demonstrate a photonic platform design capable of producing high-fidelity Greenberger-Horne-Zeilinger (GHZ) states, at telecom wavelength and in a compact and scalable configuration. Our source relies on spontaneous parametric down-conversion in a layered Sagnac interferometer, which only requires a single nonlinear crystal. This enables the generation of highly indistinguishable photon pairs, leading by entanglement fusion to four-qubit polarization-entangled GHZ states with fidelity up to $(94.73 \pm 0.21)\%$ with respect to the ideal state, at a rate of 1.7Hz. We provide a complete characterization of our source and highlight its suitability for practical quantum network applications.
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Submitted 30 June, 2024;
originally announced July 2024.
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A Practical Protocol for Quantum Oblivious Transfer from One-Way Functions
Authors:
Eleni Diamanti,
Alex B. Grilo,
Adriano Innocenzi,
Pascal Lefebvre,
Verena Yacoub,
Álvaro Yángüez
Abstract:
We present a new simulation-secure quantum oblivious transfer (QOT) protocol based on one-way functions in the plain model. With a focus on practical implementation, our protocol surpasses prior works in efficiency, promising feasible experimental realization. We address potential experimental errors and their correction, offering analytical expressions to facilitate the analysis of the required q…
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We present a new simulation-secure quantum oblivious transfer (QOT) protocol based on one-way functions in the plain model. With a focus on practical implementation, our protocol surpasses prior works in efficiency, promising feasible experimental realization. We address potential experimental errors and their correction, offering analytical expressions to facilitate the analysis of the required quantum resources. Technically, we achieve simulation security for QOT through an equivocal and relaxed-extractable quantum bit commitment.
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Submitted 13 June, 2024;
originally announced June 2024.
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layered graphene and nickel/gold films
Authors:
R. Aristegui,
P. Lefebvre,
C. Brimont,
T. Guillet,
M. Vladimirova,
I. Paradisanos,
C. Robert,
X. Marie,
B. Urbaszek,
S. Chenot,
Y. Cordier,
B. Damilano
Abstract:
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by depositing metallic layers on the sample surface. Using spatially-resolved micro-photoluminescence spectroscopy we compare the effects of two different mater…
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Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by depositing metallic layers on the sample surface. Using spatially-resolved micro-photoluminescence spectroscopy we compare the effects of two different materials, Nickel/Gold (NiAu) and few-layered graphene (FLG), on the potential landscape experienced by the excitons. We are able to (i) determine the potential barriers imposed on QW excitons by deposition of FLG and NiAu to be $14$ and $82$~meV, respectively, and (ii) to evidence their impact on the exciton transport at appropriate densities. Optical losses and inhomogeneous broadening induced by deposition of NiAu and FLG layers are similar, and their joined implementation constitute a promising tool for electrostatic modulation of IX densities even in the absence of any applied electric bias.
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Submitted 7 June, 2023;
originally announced June 2023.
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Experimentally Certified Transmission of a Quantum Message through an Untrusted and Lossy Quantum Channel via Bell's Theorem
Authors:
Simon Neves,
Laura dos Santos Martins,
Verena Yacoub,
Pascal Lefebvre,
Ivan Supic,
Damian Markham,
Eleni Diamanti
Abstract:
Quantum transmission links are central elements in essentially all protocols involving the exchange of quantum messages. Emerging progress in quantum technologies involving such links needs to be accompanied by appropriate certification tools. In adversarial scenarios, a certification method can be vulnerable to attacks if too much trust is placed on the underlying system. Here, we propose a proto…
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Quantum transmission links are central elements in essentially all protocols involving the exchange of quantum messages. Emerging progress in quantum technologies involving such links needs to be accompanied by appropriate certification tools. In adversarial scenarios, a certification method can be vulnerable to attacks if too much trust is placed on the underlying system. Here, we propose a protocol in a device independent framework, which allows for the certification of practical quantum transmission links in scenarios where minimal assumptions are made about the functioning of the certification setup. In particular, we take unavoidable transmission losses into account by modeling the link as a completely-positive trace-decreasing map. We also, crucially, remove the assumption of independent and identically distributed samples, which is known to be incompatible with adversarial settings. Finally, in view of the use of the certified transmitted states for follow-up applications, our protocol moves beyond certification of the channel to allow us to estimate the quality of the transmitted quantum message itself. To illustrate the practical relevance and the feasibility of our protocol with currently available technology we provide an experimental implementation based on a state-of-the-art polarization entangled photon pair source in a Sagnac configuration and analyze its robustness for realistic losses and errors.
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Submitted 7 December, 2023; v1 submitted 19 April, 2023;
originally announced April 2023.
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Electrical control of excitons in GaN/(Al,Ga)N quantum wells
Authors:
R. Aristegui,
F. Chiaruttini,
B. Jouault,
P. Lefebvre,
C. Brimont,
T. Guillet,
M. Vladimirova,
S. Chenot,
Y. Cordier,
B. Damilano
Abstract:
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photolumines…
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A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photoluminescence and photo-induced current, we demonstrate that exciton density in the trap can be controlled via an external electric bias, which is capable of altering the trap depth. Application of a negative bias deepens the trapping potential, but does not lead to any additional accumulation of excitons in the trap. This is due to exciton dissociation instigated by the lateral electric field at the electrode edges. The resulting carrier losses are detected as an increased photo-current and reduced photoluminescence intensity. By contrast, application of a positive bias washes out the electrode-induced trapping potential. Thus, excitons get released from the trap and recover free propagation in the plane that we reveal by spatially-resolved photoluminescence.
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Submitted 25 March, 2022;
originally announced March 2022.
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Sample-efficient adaptive calibration of quantum networks using Bayesian optimization
Authors:
Cristian L. Cortes,
Pascal Lefebvre,
Nikolai Lauk,
Michael J. Davis,
Neil Sinclair,
Stephen K. Gray,
Daniel Oblak
Abstract:
Indistinguishable photons are imperative for advanced quantum communication networks. Indistinguishability is difficult to obtain because of environment-induced photon transformations and loss imparted by communication channels, especially in noisy scenarios. Strategies to mitigate these transformations often require hardware or software overhead that is restrictive (e.g. adding noise), infeasible…
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Indistinguishable photons are imperative for advanced quantum communication networks. Indistinguishability is difficult to obtain because of environment-induced photon transformations and loss imparted by communication channels, especially in noisy scenarios. Strategies to mitigate these transformations often require hardware or software overhead that is restrictive (e.g. adding noise), infeasible (e.g. on a satellite), or time-consuming for deployed networks. Here we propose and develop resource-efficient Bayesian optimization techniques to rapidly and adaptively calibrate the indistinguishability of individual photons for quantum networks using only information derived from their measurement. To experimentally validate our approach, we demonstrate the optimization of Hong-Ou-Mandel interference between two photons -- a central task in quantum networking -- finding rapid, efficient, and reliable convergence towards maximal photon indistinguishability in the presence of high loss and shot noise. We expect our resource-optimized and experimentally friendly methodology will allow fast and reliable calibration of indistinguishable quanta, a necessary task in distributed quantum computing, communications, and sensing, as well as for fundamental investigations.
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Submitted 10 June, 2021;
originally announced June 2021.
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Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructures
Authors:
F. Chiaruttini,
T. Guillet,
C. Brimont,
D. Scalbert,
S. Cronenberger,
B. Jouault,
P. Lefebvre,
B. Damilano,
M. Vladimirova
Abstract:
The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density we drive the system from the excitonic state, characterized by a diamagnetic behavior and thus a quadratic energy dependence on the magnetic field, to…
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The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density we drive the system from the excitonic state, characterized by a diamagnetic behavior and thus a quadratic energy dependence on the magnetic field, to the unbound electron-hole state, characterized by a linear shift of the emission energy with the magnetic field. The complexity of the system requires to take into account both the density-dependence of the exciton binding energy and the exciton-exciton interaction and correlation energy that are of the same order of magnitude. We estimate the carrier density at Mott transition as $n_\mathrm{Mott}\approx 2\times 10^{11}$cm$^{-2}$ and address the role played by excitonic correlations in this process. Our results strongly rely on the spatial resolution of the photoluminescence and the assessment of the carrier transport. We show, that in contrast to GaAs/(Al,Ga)As systems, where transport of dipolar magnetoexcitons is strongly quenched by the magnetic field due to exciton mass enhancement, in GaN/(Al,Ga)N the band parameters are such that the transport is preserved up to $9$T.
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Submitted 16 October, 2020;
originally announced October 2020.
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Improved Light-Matter Interaction for Storage of Quantum States of Light in a Thulium-Doped Crystal Cavity
Authors:
Jacob H. Davidson,
Pascal Lefebvre,
Jun Zhang,
Daniel Oblak,
Wolfgang Tittel
Abstract:
We design and implement an atomic frequency comb quantum memory for 793 nm wavelength photons using a monolithic cavity based on a thulium-doped Y$_3$Al$_5$O$_{12}$ (Tm:YAG) crystal. Approximate impedance matching results in the absorption of approximately $90\%$ of input photons and a memory efficiency of (27.5$\pm$ 2.7)% over a 500 MHz bandwidth. The cavity enhancement leads to a significant imp…
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We design and implement an atomic frequency comb quantum memory for 793 nm wavelength photons using a monolithic cavity based on a thulium-doped Y$_3$Al$_5$O$_{12}$ (Tm:YAG) crystal. Approximate impedance matching results in the absorption of approximately $90\%$ of input photons and a memory efficiency of (27.5$\pm$ 2.7)% over a 500 MHz bandwidth. The cavity enhancement leads to a significant improvement over the previous efficiency in Tm-doped crystals using a quantum memory protocol. In turn, this allows us for the first time to store and recall quantum states of light in such a memory. Our results demonstrate progress toward efficient and faithful storage of single photon qubits with large time-bandwidth product and multi-mode capacity for quantum networking.
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Submitted 30 January, 2020;
originally announced January 2020.
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Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics
Authors:
F. Chiaruttini,
T. Guillet,
C. Brimont,
B. Jouault,
P. Lefebvre,
S. Chenot,
Y. Cordier,
B. Damilano,
M. Vladimirova
Abstract:
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the…
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Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.
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Submitted 8 February, 2019;
originally announced February 2019.
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Entanglement between more than two hundred macroscopic atomic ensembles in a solid
Authors:
P. Zarkeshian,
C. Deshmukh,
N. Sinclair,
S. K. Goyal,
G. H. Aguilar,
P. Lefebvre,
M. Grimau Puigibert,
V. B. Verma,
F. Marsili,
M. D. Shaw,
S. W. Nam,
K. Heshami,
D. Oblak,
W. Tittel,
C. Simon
Abstract:
We create a multi-partite entangled state by storing a single photon in a crystal that contains many large atomic ensembles with distinct resonance frequencies. The photon is re-emitted at a well-defined time due to an interference effect analogous to multi-slit diffraction. We derive a lower bound for the number of entangled ensembles based on the contrast of the interference and the single-photo…
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We create a multi-partite entangled state by storing a single photon in a crystal that contains many large atomic ensembles with distinct resonance frequencies. The photon is re-emitted at a well-defined time due to an interference effect analogous to multi-slit diffraction. We derive a lower bound for the number of entangled ensembles based on the contrast of the interference and the single-photon character of the input, and we experimentally demonstrate entanglement between over two hundred ensembles, each containing a billion atoms. In addition, we illustrate the fact that each individual ensemble contains further entanglement. Our results are the first demonstration of entanglement between many macroscopic systems in a solid and open the door to creating even more complex entangled states.
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Submitted 14 March, 2017;
originally announced March 2017.
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Room-temperature transport of indirect excitons in (Al,Ga)N/GaN quantum wells
Authors:
F. Fedichkin,
T. Guillet,
P. Valvin,
B. Jouault,
C. Brimont,
T. Bretagnon,
L. Lahourcade,
N. Grandjean,
P. Lefebvre,
M. Vladimirova
Abstract:
We report on the exciton propagation in polar (Al,Ga)N/GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells (QWs) grown on GaN template substrate. By comparing microphotoluminescence images of two identical QWs grown on sapphire and on GaN, we reveal the twofold role played by GaN substrate…
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We report on the exciton propagation in polar (Al,Ga)N/GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells (QWs) grown on GaN template substrate. By comparing microphotoluminescence images of two identical QWs grown on sapphire and on GaN, we reveal the twofold role played by GaN substrate in the transport of excitons. First, the lower threading dislocation densities in such structures yield higher exciton radiative efficiency, thus limiting nonradiative losses of propagating excitons. Second, the absence of the dielectric mismatch between the substrate and the epilayer strongly limits the photon guiding effect in the plane of the structure,making exciton transport easier to distinguish from photon propagation. Our results pave the way towards room-temperature gate-controlled exciton transport in wide-bandgap polar heterostructures.
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Submitted 1 March, 2016;
originally announced March 2016.
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Transport of indirect excitons in ZnO quantum wells
Authors:
Yuliya Kuznetsova,
Fedor Fedichkin,
Peristera Andreakou,
Eric Calman,
Leonid Butov,
Pierre Lefebvre,
Thierry Bretagnon,
Thierry Guillet,
Maria Vladimirova,
C. Morhain,
Jean-Michel Chauveau
Abstract:
We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.
We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.
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Submitted 23 July, 2015; v1 submitted 10 March, 2015;
originally announced March 2015.
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Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
Authors:
F. Fedichkin,
P. Andreakou,
B. Jouault,
M. Vladimirova,
T. Guillet,
C. Brimont,
P. Valvin,
T. Bretagnon,
A. Dussaigne,
N. Grandjean,
P. Lefebvre
Abstract:
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that increases linearly with exciton density, whereas the ra…
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We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that increases linearly with exciton density, whereas the radiative recombination rate increases exponentially. Under continuous, localized excitation, we measure a continuous red shift of the emission, as excitons propagate away from the excitation spot. This shift corresponds to a steady-state gradient of exciton density, measured over several tens of micrometers. Time-resolved micro-photoluminescence experiments provide information on the dynamics of recombination and transport of dipolar excitons. We account for the ensemble of experimental results by solving the nonlinear drift-diffusion equation. Quantitative analysis suggests that in such structures, exciton propagation on the scale of 10 to 20 microns is mainly driven by diffusion, rather than by drift, due to the strong disorder and the presence of nonradiative defects. Secondary exciton creation, most probably by the intense higher-energy luminescence, guided along the sample plane, is shown to contribute to the exciton emission pattern on the scale up to 100 microns. The exciton propagation length is strongly temperature dependent, the emission being quenched beyond a critical distance governed by nonradiative recombination.
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Submitted 11 February, 2015;
originally announced February 2015.
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Sub-meV linewidth in GaN nanowire ensembles: absence of surface excitons due to the field-ionization of donors
Authors:
Pierre Corfdir,
Johannes K. Zettler,
Christian Hauswald,
Sergio Fernandez-Garrido,
Oliver Brandt,
Pierre Lefebvre
Abstract:
We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 degrees Celsius) temperatures. The spectra of these samples reveal a prominent transition of excitons bound to neutral Si impurities which is not observed for samples grown under standard conditions. Motivated by these expe…
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We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 degrees Celsius) temperatures. The spectra of these samples reveal a prominent transition of excitons bound to neutral Si impurities which is not observed for samples grown under standard conditions. Motivated by these experimental results, we investigate theoretically the impact of surface-induced internal electric fields on the binding energy of donors by a combined Monte Carlo and envelope function approach. We obtain the ranges of doping and diameter for which the potential is well described using the Poisson equation, where one assumes a spatially homogeneous distribution of dopants. Our calculations also show that surface donors in nanowires with a diameter smaller than 100 nm are ionized when the surface electric field is larger than about 10 kV/cm, corresponding to a doping level higher than 2 x 10^16 cm^-3. This result explains the experimental observation: since the (D+,X) complex is not stable in GaN, surface-donor-bound excitons do not contribute to the photoluminescence spectra of GaN nanowires above a certain doping level, and the linewidth reflects the actual structural perfection of the nanowire ensemble.
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Submitted 16 July, 2014;
originally announced July 2014.
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Presence of pKa Perturbations Among Homeodomain Residues Facilitates DNA Binding
Authors:
Christopher M. Frenz,
Philippe P. Lefebvre
Abstract:
Homeodomain containing proteins are a broad class of DNA binding proteins that are believed to primarily function as transcription factors. Electrostatics interactions have been demonstrated to be critical for the binding of the homeodomain to DNA. An examination of the electrostatic state of homeodomain residues involved in DNA phosphate binding has demonstrated the conserved presence of upward…
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Homeodomain containing proteins are a broad class of DNA binding proteins that are believed to primarily function as transcription factors. Electrostatics interactions have been demonstrated to be critical for the binding of the homeodomain to DNA. An examination of the electrostatic state of homeodomain residues involved in DNA phosphate binding has demonstrated the conserved presence of upward shifted pKa values among the basic residue of lysine and arginine. It is believed that these pKa perturbations work to facilitate binding to DNA since they ensure that the basic residues always retain a positive charge.
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Submitted 27 July, 2009;
originally announced July 2009.
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Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities
Authors:
Stéphane Faure,
T. Guillet,
P. Lefebvre,
T. Bretagnon,
B. Gil
Abstract:
Wide bandgap semiconductors are attractive candidates for polariton-based devices operating at room temperature. We present numerical simulations of reflectivity, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compare the particularities of the strong coupling regime in each system. Indeed the intrinsic properties of the excitons in these materials resul…
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Wide bandgap semiconductors are attractive candidates for polariton-based devices operating at room temperature. We present numerical simulations of reflectivity, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compare the particularities of the strong coupling regime in each system. Indeed the intrinsic properties of the excitons in these materials result in a different hierarchy of energies between the valence-band splitting, the effective Rydberg and the Rabi energy, defining the characteristics of the exciton-polariton states independently of the quality factor of the cavity. The knowledge of the composition of the polariton eigenstates is central to optimize such systems. We demonstrate that, in ZnO bulk microcavities, only the lower polaritons are good eigenstates and all other resonances are damped, whereas upper polaritons can be properly defined in GaAs and GaN microcavities.
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Submitted 10 October, 2008;
originally announced October 2008.
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Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory
Authors:
Richard Bardoux,
Thierry Guillet,
B. Gil,
P. Lefebvre,
T. Bretagnon,
T. Taliercio,
Sébastien Rousset,
F. Semond
Abstract:
We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily correspond to crystallographic directions. Moreover…
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We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily correspond to crystallographic directions. Moreover, we could not observe any splitting of polarized emission lines, at least within the spectral resolution of our setup (1 meV). We propose a model based on the joint effects of electron-hole exchange interaction and in-plane anisotropy of strain and/or quantum dot shape, in order to explain the quantitative differences between our observations and those previously reported on, e.g. CdTe- or InAs-based quantum dots.
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Submitted 7 July, 2008; v1 submitted 6 March, 2008;
originally announced March 2008.
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Spin-Exchange Interaction in ZnO-based Quantum Wells
Authors:
B. Gil,
P. Lefebvre,
T. Bretagnon,
T. Guillet,
J. A. Sans,
T. Taliercio,
C. Morhain
Abstract:
Wurtzitic ZnO/(Zn,Mg)O quantum wells grown along the (0001) direction permit unprecedented tunability of the short-range spin exchange interaction. In the context of large exciton binding energies and electron-hole exchange interaction in ZnO, this tunability results from the competition between quantum confinement and giant quantum confined Stark effect. By using time-resolved photoluminescence…
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Wurtzitic ZnO/(Zn,Mg)O quantum wells grown along the (0001) direction permit unprecedented tunability of the short-range spin exchange interaction. In the context of large exciton binding energies and electron-hole exchange interaction in ZnO, this tunability results from the competition between quantum confinement and giant quantum confined Stark effect. By using time-resolved photoluminescence we identify, for well widths under 3 nm, the redistribution of oscillator strengths between the A and B excitonic transitions, due to the enhancement of the exchange interaction. Conversely, for wider wells, the redistribution is cancelled by the dominant effect of internal electric fields, which dramatically reduce the exchange energy.
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Submitted 20 June, 2006; v1 submitted 17 March, 2006;
originally announced March 2006.
