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Purcell enhancement of silicon W centers in circular Bragg grating cavities
Authors:
Baptiste Lefaucher,
Jean-Baptiste Jager,
Vincent Calvo,
Félix Cache,
Alrik Durand,
Vincent Jacques,
Isabelle Robert-Philip,
Guillaume Cassabois,
Yoann Baron,
Frédéric Mazen,
Sébastien Kerdilès,
Shay Reboh,
Anaïs Dréau,
Jean-Michel Gérard
Abstract:
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum el…
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Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ($F_p=12.5$) and efficient luminescence extraction ($η_{coll}=40\%$ for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a two-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of $65 \pm 10 \%$ for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons, harnessing cavity quantum electrodynamics in silicon photonic chips.
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Submitted 27 October, 2023;
originally announced October 2023.
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Parallelizable Synthesis of Arbitrary Single-Qubit Gates with Linear Optics and Time-Frequency Encoding
Authors:
Antoine Henry,
Ravi Raghunathan,
Guillaume Ricard,
Baptiste Lefaucher,
Filippo Miatto,
Nadia Belabas,
Isabelle Zaquine,
Romain Alléaume
Abstract:
We propose novel methods for the exact synthesis of single-qubit unitaries with high success probability and gate fidelity, considering both time-bin and frequency-bin encodings. The proposed schemes are experimentally implementable with a spectral linear-optical quantum computation (S- LOQC) platform, composed of electro-optic phase modulators and phase-only programmable filters (pulse shapers).…
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We propose novel methods for the exact synthesis of single-qubit unitaries with high success probability and gate fidelity, considering both time-bin and frequency-bin encodings. The proposed schemes are experimentally implementable with a spectral linear-optical quantum computation (S- LOQC) platform, composed of electro-optic phase modulators and phase-only programmable filters (pulse shapers). We assess the performances in terms of fidelity and probability of the two simplest 3-components configurations for arbitrary gate generation in both encodings and give an exact analytical solution for the synthesis of an arbitrary single-qubit unitary in the time-bin encoding, using a single-tone Radio Frequency (RF) driving of the EOMs. We further investigate the parallelization of arbitrary single-qubit gates over multiple qubits with a compact experimental setup, both for spectral and temporal encodings. We systematically evaluate and discuss the impact of the RF bandwidth - that conditions the number of tones driving the modulators - and of the choice of encoding for different targeted gates. We moreover quantify the number of high fidelity Hadamard gates that can be synthesized in parallel, with minimal and increasing resources in terms of driving RF tones in a realistic system. Our analysis positions spectral S-LOQC as a promising platform to conduct massively parallel single qubit operations, with potential applications to quantum metrology and quantum tomography.
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Submitted 21 October, 2022;
originally announced October 2022.
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Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
Authors:
B. Lefaucher,
J. -B. Jager,
V. Calvo,
A. Durand,
Y. Baron,
F. Cache,
V. Jacques,
I. Robert-Philip,
G. Cassabois,
T. Herzig,
J. Meijer,
S. Pezzagna,
M. Khoury,
M. Abbarchi,
A. Dréau,
J. -M. Gérard
Abstract:
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wi…
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We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wide spectral range that is covered by G centers emission. By finely tuning the size of the microrings, we match their zero-phonon line at 1278 nm with a resonant mode of quality factor around 3000 and volume 7.2 (lambda over n)^3. The zero-phonon line intensity is enhanced by a factor of 5, both in continuous-wave and time-resolved measurements. This is attributed to the Purcell enhancement of zero-phonon spontaneous emission into the resonant mode and quantitatively understood considering the distribution of the G centers dipoles. Despite the enhancement of the zero-phonon emission, we do not observe any sizeable decrease of the average lifetime of the G centers, which points at a low radiative yield (<10%). We reveal the detrimental impact of parasitic defects in heavily implanted silicon, and discuss the perspectives for quantum electrodynamics experiments with individual color centers in lightly implanted SOI rings. Our results provide key information for the development of deterministic single photon sources for integrated quantum photonics.
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Submitted 11 October, 2022;
originally announced October 2022.
