-
Lingering Times at Resonance: The Case of Sb-based Tunneling Devices
Authors:
Edgar David Guarin Castro,
Andreas Pfenning,
Fabian Hartmann,
Andrea Naranjo,
Georg Knebl,
Marcio Daldin Teodoro,
Gilmar Eugenio Marques,
Sven Höfling,
Gerald Bastard,
Victor Lopez-Richard
Abstract:
Concurrent natural time scales related to relaxation, recombination, trapping, and drifting processes rule the semiconductor heterostructures' response to external drives when charge carrier fluxes are induced. This paper highlights the role of stoichiometry not only for the quantitative tuning of the electron-hole dynamics but also for significant qualitative contrasts of time-resolved optical re…
▽ More
Concurrent natural time scales related to relaxation, recombination, trapping, and drifting processes rule the semiconductor heterostructures' response to external drives when charge carrier fluxes are induced. This paper highlights the role of stoichiometry not only for the quantitative tuning of the electron-hole dynamics but also for significant qualitative contrasts of time-resolved optical responses during the operation of resonant tunneling devices. Therefore, similar device architectures and different compositions have been compared to elucidate the correlation among structural parameters, radiative recombination processes, and electron-hole pair and minority carrier relaxation mechanisms. When these ingredients intermix with the electronic structure in Sb-based tunneling devices, it is proven possible to assess various time scales according to the intensity of the current flux, contrary to what has been observed in As-based tunneling devices with similar design and transport characteristics. These time scales are strongly affected not only by the filling process in the $Γ$ and L states in Sb-based double-barrier quantum wells but also by the small separation between these states, compared to similar heterostructures based on As.
△ Less
Submitted 2 July, 2023;
originally announced July 2023.
-
Optical mapping of non-equilibrium charge carriers
Authors:
E. David Guarin Castro,
A. Pfenning,
F. Hartmann,
G. Knebl,
M. Daldin Teodoro,
Gilmar E. Marques,
S. Höfling,
G. Bastard,
V. Lopez-Richard
Abstract:
We investigate the energy relaxation segmentation in a resonant tunneling heterostructures by assessing the optical and transport dynamics of non-equilibrium charge carriers. The electrical and optical properties are analyzed using electronic transport measurements combined with electro- and photoluminescence spectroscopies in continuous-wave mode. The radiative recombination is mainly governed by…
▽ More
We investigate the energy relaxation segmentation in a resonant tunneling heterostructures by assessing the optical and transport dynamics of non-equilibrium charge carriers. The electrical and optical properties are analyzed using electronic transport measurements combined with electro- and photoluminescence spectroscopies in continuous-wave mode. The radiative recombination is mainly governed by the creation of heavy holes \textit{via} impact ionization processes. Our results suggest hot electrons and holes populations form independent non-equilibrium systems that do not thermalize among them and with the lattice. Consequently, the carriers effective temperature changes independently at different regions of the heterostructure, with a population distribution for holes colder than for electrons.
△ Less
Submitted 6 March, 2023;
originally announced March 2023.
-
Circular and Linear Photogalvanic Effects in Type-II GaSb/InAs Quantum Well Structures in the Inverted Regime
Authors:
H. Plank,
S. A. Tarasenko,
T. Hummel,
G. Knebl,
P. Pfeffer,
M. Kamp,
S. Höfling,
S. D. Ganichev
Abstract:
We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarizatio…
▽ More
We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings.
△ Less
Submitted 2 August, 2016;
originally announced August 2016.
