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On edge-primitive 3-arc-transitive graphs
Authors:
Michael Giudici,
Carlisle S. H. King
Abstract:
This paper begins the classification of all edge-primitive 3-arc-transitive graphs by classifying all such graphs where the automorphism group is an almost simple group with socle an alternating or sporadic group, and all such graphs where the automorphism group is an almost simple classical group with a vertex-stabiliser acting faithfully on the set of neighbours.
This paper begins the classification of all edge-primitive 3-arc-transitive graphs by classifying all such graphs where the automorphism group is an almost simple group with socle an alternating or sporadic group, and all such graphs where the automorphism group is an almost simple classical group with a vertex-stabiliser acting faithfully on the set of neighbours.
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Submitted 19 June, 2021; v1 submitted 15 October, 2019;
originally announced October 2019.
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On the finite simple images of free products of finite groups
Authors:
Carlisle S. H. King
Abstract:
Given nontrivial finite groups $A$ and $B$, not both of order 2, we prove that every finite simple group of sufficiently large rank is an image of the free product $A \ast B$. To show this, we prove that every finite simple group of sufficiently large rank is generated by a pair of subgroups isomorphic to $A$ and $B$. This proves a conjecture of Tamburini and Wilson.
Given nontrivial finite groups $A$ and $B$, not both of order 2, we prove that every finite simple group of sufficiently large rank is an image of the free product $A \ast B$. To show this, we prove that every finite simple group of sufficiently large rank is generated by a pair of subgroups isomorphic to $A$ and $B$. This proves a conjecture of Tamburini and Wilson.
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Submitted 4 April, 2018;
originally announced April 2018.
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Generation of finite simple groups by an involution and an element of prime order
Authors:
Carlisle S. H. King
Abstract:
We prove that every non-abelian finite simple group is generated by an involution and an element of prime order.
We prove that every non-abelian finite simple group is generated by an involution and an element of prime order.
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Submitted 3 January, 2017; v1 submitted 15 March, 2016;
originally announced March 2016.
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A low field technique for measuring magnetic and magneto-resistance anisotropy coefficients applied to (Ga,Mn)As
Authors:
J A Haigh,
A W Rushforth,
C S King,
K W Edmonds,
R P Campion,
C T Foxon,
B L Gallagher
Abstract:
We demonstrate a simple, low cost, magneto-transport method for rapidly characterizing the magnetic anisotropy and anisotropic magneto-resistance (AMR) of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is the analogue of magnetic susceptibility measurements of bulk material but is applicable to very small samples with low total moment. The technique is used to…
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We demonstrate a simple, low cost, magneto-transport method for rapidly characterizing the magnetic anisotropy and anisotropic magneto-resistance (AMR) of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is the analogue of magnetic susceptibility measurements of bulk material but is applicable to very small samples with low total moment. The technique is used to characterize devices fabricated from the dilute magnetic semiconductor (Ga,Mn)As. The technique allows us to probe the behavior of the parameters close to the Curie temperature, in the limit of the applied magnetic field tending to zero. This avoids the complications arising from the presence of paramagnetism.
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Submitted 27 August, 2009;
originally announced August 2009.
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Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
Authors:
A. W. Rushforth,
E. De Ranieri,
J. Zemen,
J. Wunderlich,
K. W. Edmonds,
C. S. King,
E. Ahmad,
R. P. Campion,
C. T. Foxon,
B. L. Gallagher,
K. Vyborny,
J. Kucera,
T. Jungwirth
Abstract:
We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As pr…
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We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide microscopic understanding of the measured effect. Electrically induced magnetization switching and detection of unconventional crystalline components of the anisotropic magnetoresistance are presented, illustrating the generic utility of the piezo voltage control to provide new device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.
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Submitted 22 January, 2008; v1 submitted 6 January, 2008;
originally announced January 2008.
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The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices
Authors:
A. W. Rushforth,
K. Výborný,
C. S. King,
K. W. Edmonds,
R. P. Campion,
C. T. Foxon,
J. Wunderlich,
A. C. Irvine,
V. Novák,
K. Olejník,
A. A. Kovalev,
Jairo Sinova,
T. Jungwirth,
B. L. Gallagher
Abstract:
We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)As layers and to demonst…
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We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)As layers and to demonstrate how the components of the AMR can be engineered through lithography induced local lattice relaxations. We expand on our previous [Phys. Rev. Lett. \textbf{99}, 147207 (2007)] theoretical analysis and numerical calculations to present a simplified analytical model for the origin of the non-crystalline AMR. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential.
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Submitted 16 December, 2007;
originally announced December 2007.
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Anisotropic Magnetoresistance components in (Ga,Mn)As
Authors:
A. W. Rushforth,
K. Výborný,
C. S. King,
K. W. Edmonds,
R. P. Campion,
C. T. Foxon,
J. Wunderlich,
A. C. Irvine,
P. Vašek,
V. Novák,
K. Olejník,
Jairo Sinova,
T. Jungwirth,
B. L. Gallagher
Abstract:
Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The non-crystalline AMR reflects anisotropic lifetimes of the holes due to polarized Mn impurities while the crystalline AMR is associated with valence band warping.…
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Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The non-crystalline AMR reflects anisotropic lifetimes of the holes due to polarized Mn impurities while the crystalline AMR is associated with valence band warping. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential. We develop experimental methods directly yielding the non-crystalline and crystalline AMR components which are then independently analyzed. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. We discuss generic implications of our experimental and theoretical findings including predictions for non-crystalline AMR sign reversals in dilute moment systems.
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Submitted 6 August, 2007; v1 submitted 15 February, 2007;
originally announced February 2007.
