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Mitigating Semantic Leakage in Cross-lingual Embeddings via Orthogonality Constraint
Authors:
Dayeon Ki,
Cheonbok Park,
Hyunjoong Kim
Abstract:
Accurately aligning contextual representations in cross-lingual sentence embeddings is key for effective parallel data mining. A common strategy for achieving this alignment involves disentangling semantics and language in sentence embeddings derived from multilingual pre-trained models. However, we discover that current disentangled representation learning methods suffer from semantic leakage - a…
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Accurately aligning contextual representations in cross-lingual sentence embeddings is key for effective parallel data mining. A common strategy for achieving this alignment involves disentangling semantics and language in sentence embeddings derived from multilingual pre-trained models. However, we discover that current disentangled representation learning methods suffer from semantic leakage - a term we introduce to describe when a substantial amount of language-specific information is unintentionally leaked into semantic representations. This hinders the effective disentanglement of semantic and language representations, making it difficult to retrieve embeddings that distinctively represent the meaning of the sentence. To address this challenge, we propose a novel training objective, ORthogonAlity Constraint LEarning (ORACLE), tailored to enforce orthogonality between semantic and language embeddings. ORACLE builds upon two components: intra-class clustering and inter-class separation. Through experiments on cross-lingual retrieval and semantic textual similarity tasks, we demonstrate that training with the ORACLE objective effectively reduces semantic leakage and enhances semantic alignment within the embedding space.
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Submitted 23 September, 2024;
originally announced September 2024.
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The Prompt Report: A Systematic Survey of Prompting Techniques
Authors:
Sander Schulhoff,
Michael Ilie,
Nishant Balepur,
Konstantine Kahadze,
Amanda Liu,
Chenglei Si,
Yinheng Li,
Aayush Gupta,
HyoJung Han,
Sevien Schulhoff,
Pranav Sandeep Dulepet,
Saurav Vidyadhara,
Dayeon Ki,
Sweta Agrawal,
Chau Pham,
Gerson Kroiz,
Feileen Li,
Hudson Tao,
Ashay Srivastava,
Hevander Da Costa,
Saloni Gupta,
Megan L. Rogers,
Inna Goncearenco,
Giuseppe Sarli,
Igor Galynker
, et al. (6 additional authors not shown)
Abstract:
Generative Artificial Intelligence (GenAI) systems are being increasingly deployed across all parts of industry and research settings. Developers and end users interact with these systems through the use of prompting or prompt engineering. While prompting is a widespread and highly researched concept, there exists conflicting terminology and a poor ontological understanding of what constitutes a p…
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Generative Artificial Intelligence (GenAI) systems are being increasingly deployed across all parts of industry and research settings. Developers and end users interact with these systems through the use of prompting or prompt engineering. While prompting is a widespread and highly researched concept, there exists conflicting terminology and a poor ontological understanding of what constitutes a prompt due to the area's nascency. This paper establishes a structured understanding of prompts, by assembling a taxonomy of prompting techniques and analyzing their use. We present a comprehensive vocabulary of 33 vocabulary terms, a taxonomy of 58 text-only prompting techniques, and 40 techniques for other modalities. We further present a meta-analysis of the entire literature on natural language prefix-prompting.
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Submitted 14 July, 2024; v1 submitted 6 June, 2024;
originally announced June 2024.
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Coulomb drag in graphene/hBN/graphene moiré heterostructures
Authors:
Yueyang Wang,
Hongxia Xue,
Xiong Wang,
Kenji Watanabe,
Takashi Taniguchi,
Dong-Keun Ki
Abstract:
We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (hBN) moiré heterostructure with a moiré wavelength of $\sim$14 nm and an intrinsic graphene with a lattice constant of $\sim$0.25 nm. By tuning carrier densities of each graphene layer independently, we find that the charge carriers in moiré mini-bands, i.e., near the satellite Dirac point (sDP), can be coupled…
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We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (hBN) moiré heterostructure with a moiré wavelength of $\sim$14 nm and an intrinsic graphene with a lattice constant of $\sim$0.25 nm. By tuning carrier densities of each graphene layer independently, we find that the charge carriers in moiré mini-bands, i.e., near the satellite Dirac point (sDP), can be coupled with the massless Fermions near the original Dirac point (oDP), strongly enough to generate a finite drag resistivity. At high temperature ($T$) and large density ($n$), the drag resistivities near both oDP and sDP follow a typical $n^{-α}$ ($α=1.3\sim1.7$) and $T^2$ power law dependence as expected for the momentum transfer process and it also satisfies the layer reciprocity. In contrast, at low $T$, the layer reciprocity is broken in both oDP-oDP and sDP-oDP coupled regions that suggest dominant energy drag. Furthermore, quantitatively, the drag resistivities near sDPs are smaller than those near oDP and they deviate from $T^2$ dependence below $\sim$100 K. These results suggest that the coupling between the carriers in moiré mini-bands and those in original Dirac bands may not be of a simple Fermi liquid nature.
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Submitted 21 June, 2024; v1 submitted 30 May, 2024;
originally announced May 2024.
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Emergence of moiré superlattice potential in graphene by twisted-hBN layers
Authors:
Tianyu Zhang,
Chengxin Xiao,
Hongxia Xue,
Wang Yao,
Dong-Keun Ki
Abstract:
Moiré superlattices formed in stacks of two or more 2D crystals with similar lattice structures have recently become excellent platforms to reveal new physics in low-dimensional systems. They are, however, highly sensitive to the angle and lattice constant differences between the associated crystals, limiting the range of the material choice and the possible moiré patterns for a given 2D crystal.…
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Moiré superlattices formed in stacks of two or more 2D crystals with similar lattice structures have recently become excellent platforms to reveal new physics in low-dimensional systems. They are, however, highly sensitive to the angle and lattice constant differences between the associated crystals, limiting the range of the material choice and the possible moiré patterns for a given 2D crystal. Here, we present a novel approach to realize an atomically flat substrate with a periodic moiré pattern that can induce the moiré potential on the material on top by van der Waals (vdW) interactions, without suffering from the lattice and angle mismatch. By constructing a twisted hBN (thBN) moiré substrate at an angle of about 1$^\circ$, we show that the graphene on top, aligned around 15$^\circ$ with the neighboring hBN layers, exhibits typical transport properties under a hexagonal moiré potential, including multiple satellite Dirac points (DPs), Hofstadter butterfly effect, and Brown-Zak oscillations. All features point to the existence of the moiré potential in graphene formed by thBN with $\sim$1$^\circ$ twist angle. Further statistical study shows that the twist from a parallel interface between the hBN layers is critical to induce the moiré potential. Our study demonstrates that the thBN moiré substrate can be used to investigate moiré physics in arbitrary materials without being constrained by their lattice constants.
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Submitted 16 May, 2024;
originally announced May 2024.
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Guiding Large Language Models to Post-Edit Machine Translation with Error Annotations
Authors:
Dayeon Ki,
Marine Carpuat
Abstract:
Machine Translation (MT) remains one of the last NLP tasks where large language models (LLMs) have not yet replaced dedicated supervised systems. This work exploits the complementary strengths of LLMs and supervised MT by guiding LLMs to automatically post-edit MT with external feedback on its quality, derived from Multidimensional Quality Metric (MQM) annotations. Working with LLaMA-2 models, we…
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Machine Translation (MT) remains one of the last NLP tasks where large language models (LLMs) have not yet replaced dedicated supervised systems. This work exploits the complementary strengths of LLMs and supervised MT by guiding LLMs to automatically post-edit MT with external feedback on its quality, derived from Multidimensional Quality Metric (MQM) annotations. Working with LLaMA-2 models, we consider prompting strategies varying the nature of feedback provided and then fine-tune the LLM to improve its ability to exploit the provided guidance. Through experiments on Chinese-English, English-German, and English-Russian MQM data, we demonstrate that prompting LLMs to post-edit MT improves TER, BLEU and COMET scores, although the benefits of fine-grained feedback are not clear. Fine-tuning helps integrate fine-grained feedback more effectively and further improves translation quality based on both automatic and human evaluation.
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Submitted 11 April, 2024;
originally announced April 2024.
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Landau-level spectrum and the effect of spin-orbit coupling in monolayer graphene on transition metal dichalcogenides
Authors:
Qing Rao,
Hongxia Xue,
Dong-Keun Ki
Abstract:
In graphene on transition metal dichalcogenides, proximity-induced Rashba and spin-valley Zeeman SOCs can coexist that modify graphene's electronic band differently. Here, we show that the Landau levels (LLs) are also affected by these SOCs distinctively enough to estimate their relative strengths from the Landau fan diagram. Using a simple theoretical model, we calculated the LL spectrums of grap…
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In graphene on transition metal dichalcogenides, proximity-induced Rashba and spin-valley Zeeman SOCs can coexist that modify graphene's electronic band differently. Here, we show that the Landau levels (LLs) are also affected by these SOCs distinctively enough to estimate their relative strengths from the Landau fan diagram. Using a simple theoretical model, we calculated the LL spectrums of graphene for different SOC strengths, and found that when the total SOC is strong enough (i.e., when it is comparable to the half of the energy gap between the LLs of an intrinsic graphene), the corresponding LLs will split and cross with others depending sensitively on the relative strengths of the SOC terms. To demonstrate how one can use it to estimate the relative SOC strengths, we first identified the four key features that are well separated from the complex background and can be compared with experiment directly, and used them to show that in our sample, the Rashba SOC is stronger than the spin-valley Zeeman SOC that is consistent with other spectroscopic measurements. Our study therefore provides a simple and practical strategy to analyze the LL spectrum in graphene with SOC before carrying out more in-depth measurements.
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Submitted 13 December, 2023; v1 submitted 1 October, 2023;
originally announced October 2023.
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Scratching lithography, manipulation, and soldering of 2D materials using microneedle probes
Authors:
Qing Rao,
Guoyun Gao,
Xinyu Wang,
Hongxia Xue,
Dong-Keun Ki
Abstract:
We demonstrate a facile technique to scratch, manipulate, and solder exfoliated flakes of layered 2D materials using a microneedle probe attached to the precision xyz manipulators under an optical microscope. We show that the probe can be used to scratch the flakes into a designated shape with a precision at micrometer scales, move, rotate, roll-up, and exfoliate the flakes to help building variou…
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We demonstrate a facile technique to scratch, manipulate, and solder exfoliated flakes of layered 2D materials using a microneedle probe attached to the precision xyz manipulators under an optical microscope. We show that the probe can be used to scratch the flakes into a designated shape with a precision at micrometer scales, move, rotate, roll-up, and exfoliate the flakes to help building various types of heterostructures, and form electric contacts by directly drawing/placing thin metal wires over the flake. All these can be done without lithography and etching steps that often take long processing time and involve harmful chemicals. Moreover, the setup can be easily integrated into any van der Waals assembly systems such as those in a glove box for handling air/chemical-sensitive materials. The microneedle technique demonstrated in this study therefore enables quick fabrications of devices from diverse 2D materials for testing their properties at an early stage of research before conducting more advanced studies and helps to build different types of van der Waals heterostructures.
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Submitted 13 December, 2023; v1 submitted 11 August, 2023;
originally announced August 2023.
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Towards Accurate Translation via Semantically Appropriate Application of Lexical Constraints
Authors:
Yujin Baek,
Koanho Lee,
Dayeon Ki,
Hyoung-Gyu Lee,
Cheonbok Park,
Jaegul Choo
Abstract:
Lexically-constrained NMT (LNMT) aims to incorporate user-provided terminology into translations. Despite its practical advantages, existing work has not evaluated LNMT models under challenging real-world conditions. In this paper, we focus on two important but under-studied issues that lie in the current evaluation process of LNMT studies. The model needs to cope with challenging lexical constrai…
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Lexically-constrained NMT (LNMT) aims to incorporate user-provided terminology into translations. Despite its practical advantages, existing work has not evaluated LNMT models under challenging real-world conditions. In this paper, we focus on two important but under-studied issues that lie in the current evaluation process of LNMT studies. The model needs to cope with challenging lexical constraints that are "homographs" or "unseen" during training. To this end, we first design a homograph disambiguation module to differentiate the meanings of homographs. Moreover, we propose PLUMCOT, which integrates contextually rich information about unseen lexical constraints from pre-trained language models and strengthens a copy mechanism of the pointer network via direct supervision of a copying score. We also release HOLLY, an evaluation benchmark for assessing the ability of a model to cope with "homographic" and "unseen" lexical constraints. Experiments on HOLLY and the previous test setup show the effectiveness of our method. The effects of PLUMCOT are shown to be remarkable in "unseen" constraints. Our dataset is available at https://github.com/papago-lab/HOLLY-benchmark
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Submitted 21 June, 2023;
originally announced June 2023.
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Cross-lingual QA: A Key to Unlocking In-context Cross-lingual Performance
Authors:
Sunkyoung Kim,
Dayeon Ki,
Yireun Kim,
Jinsik Lee
Abstract:
Multilingual large language models (MLLMs) have demonstrated significant cross-lingual capabilities through in-context learning. Existing approaches typically construct monolingual in-context examples, either in the source or target language. However, translating entire in-context examples into the target language might compromise contextual integrity and be costly in the case of long-context pass…
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Multilingual large language models (MLLMs) have demonstrated significant cross-lingual capabilities through in-context learning. Existing approaches typically construct monolingual in-context examples, either in the source or target language. However, translating entire in-context examples into the target language might compromise contextual integrity and be costly in the case of long-context passages. To address this, we introduce Cross-lingual QA, a cross-lingual prompting method that translates only the question and answer parts, thus reducing translation costs. Experiments on four typologically diverse multilingual benchmarks show that Cross-lingual QA prompting effectively stimulates models to elicit their cross-lingual knowledge, outperforming prior monolingual prompting approaches. Furthermore, we show that prompting open-source MLLMs with cross-lingual in-context examples enhances performance as the model scale increases.
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Submitted 16 July, 2024; v1 submitted 24 May, 2023;
originally announced May 2023.
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Ballistic transport spectroscopy of spin-orbit-coupled bands in monolayer graphene on WSe$_2$
Authors:
Qing Rao,
Wun-Hao Kang,
Hongxia Xue,
Ziqing Ye,
Xuemeng Feng,
Kenji Watanabe,
Takashi Taniguchi,
Ning Wang,
Ming-Hao Liu,
Dong-Keun Ki
Abstract:
Van der Waals interactions with transition metal dichalcogenides was shown to induce strong spin-orbit coupling (SOC) in graphene, offering great promises to combine large experimental flexibility of graphene with unique tuning capabilities of the SOC that can rotate spin by moving electrons or vice versa. Here, we probe SOC-driven band splitting and electron dynamics in graphene on WSe$_2$ by mea…
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Van der Waals interactions with transition metal dichalcogenides was shown to induce strong spin-orbit coupling (SOC) in graphene, offering great promises to combine large experimental flexibility of graphene with unique tuning capabilities of the SOC that can rotate spin by moving electrons or vice versa. Here, we probe SOC-driven band splitting and electron dynamics in graphene on WSe$_2$ by measuring ballistic transverse magnetic focusing. We found a clear splitting in the first focusing peak whose evolution in charge density and magnetic field is well reproduced by calculations using SOC strength of ~13 meV and no splitting in the second peak that indicates stronger Rashba SOC. A possible suppression of electron-electron scatterings was also found in temperature dependence measurement. Further, we found that Shubnikov-de Haas oscillations exhibit SOC strength of ~3.4 meV, suggesting that it probes different electron dynamics, calling for new theory. Our study demonstrates an interesting possibility to exploit ballistic electron motion pronounced in graphene for emerging spin-orbitronics.
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Submitted 14 April, 2023; v1 submitted 2 March, 2023;
originally announced March 2023.
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MARS via LASSO
Authors:
Dohyeong Ki,
Billy Fang,
Adityanand Guntuboyina
Abstract:
Multivariate adaptive regression splines (MARS) is a popular method for nonparametric regression introduced by Friedman in 1991. MARS fits simple nonlinear and non-additive functions to regression data. We propose and study a natural lasso variant of the MARS method. Our method is based on least squares estimation over a convex class of functions obtained by considering infinite-dimensional linear…
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Multivariate adaptive regression splines (MARS) is a popular method for nonparametric regression introduced by Friedman in 1991. MARS fits simple nonlinear and non-additive functions to regression data. We propose and study a natural lasso variant of the MARS method. Our method is based on least squares estimation over a convex class of functions obtained by considering infinite-dimensional linear combinations of functions in the MARS basis and imposing a variation based complexity constraint. Our estimator can be computed via finite-dimensional convex optimization, although it is defined as a solution to an infinite-dimensional optimization problem. Under a few standard design assumptions, we prove that our estimator achieves a rate of convergence that depends only logarithmically on dimension and thus avoids the usual curse of dimensionality to some extent. We also show that our method is naturally connected to nonparametric estimation techniques based on smoothness constraints. We implement our method with a cross-validation scheme for the selection of the involved tuning parameter and compare it to the usual MARS method in various simulation and real data settings.
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Submitted 13 October, 2024; v1 submitted 23 November, 2021;
originally announced November 2021.
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A Family of Finite-Temperature Electronic Phase Transitions in Graphene Multilayers
Authors:
Youngwoo Nam,
Dong-Keun Ki,
David Soler-Delgado,
Alberto F. Morpurgo
Abstract:
Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state, whose origin remains to be understood. Here we show that a finite-temperature second order phase transition occurs in multilayers whose critical temperature Tc increases from 12 K in bilayers to 100 K in heptalayers. A comparison of the data to a phenomenological model inspir…
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Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state, whose origin remains to be understood. Here we show that a finite-temperature second order phase transition occurs in multilayers whose critical temperature Tc increases from 12 K in bilayers to 100 K in heptalayers. A comparison of the data to a phenomenological model inspired by a mean field approach suggests that the transition is associated with the appearance of a self-consistent valley- and spin-dependent staggered potential changing sign from one layer to the next, appearing at Tc and increasing upon cooling. The systematic evolution with thickness of several measured quantities imposes constraints on any microscopic theory aiming to analyze the nature of electronic correlations in this system.
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Submitted 26 November, 2018;
originally announced November 2018.
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Controlling the topological sector of magnetic solitons in exfoliated Cr$_{1/3}$NbS$_2$ crystals
Authors:
L. Wang,
N. Chepiga,
D. -K. Ki,
L. Li,
F. Li,
W. Zhu,
Y. Kato,
O. S. Ovchinnikova,
F. Mila,
I. Martin,
D. Mandrus,
A. F. Morpurgo
Abstract:
We investigate manifestations of topological order in monoaxial helimagnet Cr$_{1/3}$NbS$_2$ by performing transport measurements on ultra-thin crystals. Upon sweeping the magnetic field perpendicularly to the helical axis, crystals thicker than one helix pitch (48 nm) but much thinner than the magnetic domain size ($\sim$1 $μ$m) are found to exhibit sharp and hysteretic resistance jumps. We show…
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We investigate manifestations of topological order in monoaxial helimagnet Cr$_{1/3}$NbS$_2$ by performing transport measurements on ultra-thin crystals. Upon sweeping the magnetic field perpendicularly to the helical axis, crystals thicker than one helix pitch (48 nm) but much thinner than the magnetic domain size ($\sim$1 $μ$m) are found to exhibit sharp and hysteretic resistance jumps. We show that these phenomena originate from transitions between topological sectors with different number of magnetic solitons. This is confirmed by measurements on crystals thinner than 48 nm --in which the topological sector cannot change-- that do not exhibit any jump or hysteresis. Our results show the ability to deterministically control the topological sector of finite-size Cr$_{1/3}$NbS$_2$ and to detect inter-sector transitions by transport measurements.
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Submitted 10 April, 2017;
originally announced April 2017.
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Electron-hole collision limited transport in charge-neutral bilayer graphene
Authors:
Youngwoo Nam,
Dong-Keun Ki,
David Soler-Delgado,
Alberto F. Morpurgo
Abstract:
Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impuriti…
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Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impurities, but by electron-hole collisions. The phenomenon manifests itself in a negative four-terminal resistance that becomes visible when the density of holes (electrons) is suppressed by gate-shifting the Fermi level in the conduction (valence) band, above the thermal energy. For smaller densities transport is diffusive, and the measured conductivity is reproduced quantitatively, with no fitting parameters, by including electron-hole scattering as the only process causing velocity relaxation. Experiments on a trilayer device show that the phenomenon is robust and that transport at charge neutrality is governed by the same physics. Our results provide a textbook illustration of a transport regime that had not been observed previously and clarify the nature of conduction through charge-neutral graphene under conditions in which carrier density inhomogeneity is immaterial. They also demonstrate that transport can be limited by a fully electronic mechanism, originating from the same microscopic processes that govern the physics of Dirac-like plasmas.
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Submitted 24 April, 2018; v1 submitted 15 March, 2017;
originally announced March 2017.
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Interaction-induced insulating state in thick multilayer graphene
Authors:
Youngwoo Nam,
Dong-Keun Ki,
Mikito Koshino,
Edward McCann,
Alberto F. Morpurgo
Abstract:
Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. Bernal-stacked layers, in particular, have shown a remarkable even-odd effect with mono- and tri-layers remaining gapless conductors, and bi- and tetra-layers becoming gapped insulators. These observations $-$at odds with…
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Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. Bernal-stacked layers, in particular, have shown a remarkable even-odd effect with mono- and tri-layers remaining gapless conductors, and bi- and tetra-layers becoming gapped insulators. These observations $-$at odds with the established notion that (Bernal) trilayers and thicker multilayers are semi-metals$-$ have resulted in the proposal of a physical scenario leading to a surprising prediction, namely that even-layered graphene multilayers remain insulating irrespective of their thickness. Here, we present data from two devices that conform ideally to this hypothesis, exhibiting the behavior expected for Bernal-stacked hexa and octalayer graphene. Despite their large thickness, these multilayers are insulating for carrier density |n|<2-3x10$^{10}$cm$^{-2}$, possess an energy gap of approximately 1.5 meV at charge neutrality (in virtually perfect agreement with what is observed in bi and tetra layer graphene) and exhibit the expected integer quantum Hall effect. These findings indicate the soundness of our basic insights on the effect of electron interactions in Bernal graphene multilayers, show that graphene multilayers exhibit unusual and interesting physics that remains to be understood, and pose ever more pressing questions as to the microscopic mechanisms behind the semimetallic behavior of bulk graphite.
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Submitted 4 October, 2016;
originally announced October 2016.
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Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides
Authors:
Zhe Wang,
Dong-Keun Ki,
Jun Yong Khoo,
Diego Mauro,
Helmuth Berger,
Leonid S. Levitov,
Alberto F. Morpurgo
Abstract:
We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and extremely robust, despite it being merely interfacially-induced, with neither graphene nor the TMD substrates changing their structure. This is found to be the case…
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We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and extremely robust, despite it being merely interfacially-induced, with neither graphene nor the TMD substrates changing their structure. This is found to be the case irrespective of the TMD material used, of the transport regime, of the carrier type in the graphene band, and of the thickness of the graphene multilayer. Specifically, we perform weak antilocalization measurements as the simplest and most general diagnostic of SOI, and show that the spin relaxation time is very short in all cases regardless of the elastic scattering time. Such a short spin-relaxation time strongly suggests that the SOI originates from a modification of graphene band structure. We confirmed this expectation by measuring a gate-dependent beating, and a corresponding frequency splitting, in the low-field Shubnikov-de Haas magneto-resistance oscillations in high quality bilayer graphene on WSe$_2$. These measurements provide an unambiguous diagnostic of a SOI-induced splitting in the electronic band structure, and their analysis allows us to determine the SOI coupling constants for the Rashba term and the so-called spin-valley coupling term, i.e., the terms that were recently predicted theoretically for interface-induced SOI in graphene. The magnitude of the SOI splitting is found to be on the order of 10 meV, more than 100 times greater than the SOI intrinsic to graphene. Both the band character of the interfacially induced SOI, as well as its robustness and large magnitude make graphene-on-TMD a promising system to realize and explore a variety of spin-dependent transport phenomena, such as, in particular, spin-Hall and valley-Hall topological insulating states.
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Submitted 6 June, 2016;
originally announced June 2016.
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Direct Observation of Long-range field-effect from gate tuning of non-local conductivity
Authors:
Lin Wang,
Ignacio Gutiérrez-Lezama,
Céline Barreteau,
Dong-Keun Ki,
Enrico Giannini,
Alberto F. Morpurgo
Abstract:
We report the observation of an unexpected, long-range field-effect in WTe$_2$ devices, leading to large gate-induced changes of the transport properties of crystals much thicker than the electrostatic screening length. The phenomenon --which manifests itself very differently from the conventional field-effect-- originates from the non-local nature of transport in the devices that are thinner than…
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We report the observation of an unexpected, long-range field-effect in WTe$_2$ devices, leading to large gate-induced changes of the transport properties of crystals much thicker than the electrostatic screening length. The phenomenon --which manifests itself very differently from the conventional field-effect-- originates from the non-local nature of transport in the devices that are thinner than the carrier mean free path, because of the dominant role of surface scattering. We reproduce theoretically the gate dependence of the measured classical and quantum magneto-transport in all detail, and show that the phenomenon is caused by the gate-tuning of the bulk carrier mobility by changing the scattering at the surface. Our results demonstrate the possibility to gate tune the electronic properties deep in the interior of conducting materials, avoiding limitations imposed by electrostatic screening.
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Submitted 30 September, 2016; v1 submitted 29 April, 2016;
originally announced April 2016.
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Strong interface-induced spin-orbit coupling in graphene on WS2
Authors:
Zhe Wang,
Dong-Keun Ki,
Hua Chen,
Helmuth Berger,
Allan H. MacDonald,
Alberto F. Morpurgo
Abstract:
Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in the band structure of graphene on hexagonal boron nitride (hBN) substrates. Ongoing research strives to explore interfacial interactions in a broader class of materials in order to engineer targeted electronic properties. Here we show that at a…
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Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in the band structure of graphene on hexagonal boron nitride (hBN) substrates. Ongoing research strives to explore interfacial interactions in a broader class of materials in order to engineer targeted electronic properties. Here we show that at an interface with a tungsten disulfide (WS2) substrate, the strength of the spin-orbit interaction (SOI) in graphene is very strongly enhanced. The induced SOI leads to a pronounced low-temperature weak anti-localization (WAL) effect, from which we determine the spin-relaxation time. We find that spin-relaxation time in graphene is two-to-three orders of magnitude smaller on WS2 than on SiO2 or hBN, and that it is comparable to the intervalley scattering time. To interpret our findings we have performed first-principle electronic structure calculations, which both confirm that carriers in graphene-on-WS2 experience a strong SOI and allow us to extract a spin-dependent low-energy effective Hamiltonian. Our analysis further shows that the use of WS2 substrates opens a possible new route to access topological states of matter in graphene-based systems.
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Submitted 12 August, 2015;
originally announced August 2015.
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Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene
Authors:
Anya L. Grushina,
Dong-Keun Ki,
Mikito Koshino,
Aurelien A. L. Nicolet,
Clément Faugeras,
Edward McCann,
Marek Potemski,
Alberto F. Morpurgo
Abstract:
The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are predicted to open a gap at charge neutrality, turning the system into an insulator, as observed experimentally. In mono and (Bernal-stacked) trilayers, interactions,…
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The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are predicted to open a gap at charge neutrality, turning the system into an insulator, as observed experimentally. In mono and (Bernal-stacked) trilayers, interactions, although still important, do not have an equally drastic effect, and these systems remain conducting at low temperature. It may be expected that interaction effects become weaker for thicker multilayers, whose behavior should eventually converge to that of graphite. Here we show that this expectation does not correspond to reality by investigating the case of Bernal-stacked tetralayer graphene (4LG). We reveal the occurrence of a robust insulating state in a narrow range of carrier densities around charge neutrality, incompatible with the behavior expected from the single-particle band structure. The phenomenology resembles that observed in bilayers, but the stronger conductance suppression makes the insulating state in 4LG visible at higher temperature. To account for our findings, we suggest a natural generalization of the interaction-driven, symmetry-broken states proposed for bilayers. This generalization also explains the systematic even-odd effect of interactions in Bernal-stacked layers of different thickness that is emerging from experiments, and has implications for the multilayer-to-graphite crossover.
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Submitted 27 January, 2015;
originally announced January 2015.
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Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
Authors:
Nuno J. G. Couto,
Davide Costanzo,
Stephan Engels,
Dong-Keun Ki,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Stampfer,
Francisco Guinea,
Alberto F. Morpurgo
Abstract:
We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. Low-temperature transport measurements on many devices reveal a clear correlation between the carrier mobility $μ$ and the width $n^*$ of the…
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We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. Low-temperature transport measurements on many devices reveal a clear correlation between the carrier mobility $μ$ and the width $n^*$ of the resistance peak around charge neutrality, demonstrating that charge scattering and density inhomogeneities originate from the same microscopic mechanism. The study of weak-localization unambiguously shows that this mechanism is associated to a long-ranged disorder potential, and provides clear indications that random pseudo-magnetic fields due to strain are the dominant scattering source. Spatially resolved Raman spectroscopy measurements confirm the role of local strain fluctuations, since the line-width of the Raman 2D-peak --containing information of local strain fluctuations present in graphene-- correlates with the value of maximum observed mobility. The importance of strain is corroborated by a theoretical analysis of the relation between $μ$ and $n^*$ that shows how local strain fluctuations reproduce the experimental data at a quantitative level, with $n^*$ being determined by the scalar deformation potential and $μ$ by the random pseudo-magnetic field (consistently with the conclusion drawn from the analysis of weak-localization). Throughout our study, we compare the behavior of devices on hBN substrates to that of devices on SiO$_2$ and SrTiO$_3$, and find that all conclusions drawn for the case of hBN are compatible with the observations made on these other materials. These observations suggest that random strain fluctuations are the dominant source of disorder for high-quality graphene on many different substrates, and not only on hexagonal boron nitride.
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Submitted 14 September, 2014; v1 submitted 21 January, 2014;
originally announced January 2014.
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High-quality multi-terminal suspended graphene devices
Authors:
Dong-Keun Ki,
Alberto F. Morpurgo
Abstract:
We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected directly to the part of graphene probed by transport measurements, but only through etched constriction, which prevents the contacts from acting invasively. The d…
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We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected directly to the part of graphene probed by transport measurements, but only through etched constriction, which prevents the contacts from acting invasively. The device high quality and uniformity is demonstrated by a reproducibly narrow (delta_n ~ 10^9 cm^-2) resistance peak around charge neutrality, by carrier mobility values exceeding 10^6 cm^2/V/s, by the observation of integer quantum Hall plateaus starting at 30 mT and of symmetry broken states at about 200 mT, and by the occurrence of a negative multi-terminal resistance directly proving the occurrence of ballistic transport. As these multi-terminal devices enable measurements that cannot be done in a simpler two-terminal configuration, we anticipate that their use in future studies of graphene-based systems will be particularly relevant.
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Submitted 16 January, 2014;
originally announced January 2014.
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Observation of even denominator fractional quantum Hall effect in suspended bilayer graphene
Authors:
Dong-Keun Ki,
Vladimir I. Fal'ko,
Dmitry A. Abanin,
Alberto F. Morpurgo
Abstract:
We investigate low-temperature magneto-transport in recently developed, high-quality multi-terminal suspended bilayer graphene devices, enabling the independent measurement of the longitudinal and transverse resistance. We observe clear signatures of the fractional quantum Hall effect, with different states that are either fully developed, and exhibit a clear plateau in the transverse resistance w…
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We investigate low-temperature magneto-transport in recently developed, high-quality multi-terminal suspended bilayer graphene devices, enabling the independent measurement of the longitudinal and transverse resistance. We observe clear signatures of the fractional quantum Hall effect, with different states that are either fully developed, and exhibit a clear plateau in the transverse resistance with a concomitant dip in longitudinal resistance, or incipient, and exhibit only a longitudinal resistance minimum. All observed states scale as a function of filling factor nu, as expected. An unprecedented even-denominator fractional state is observed at nu = -1/2 on the hole side, exhibiting a clear plateau in Rxy quantized at the expected value of 2h/e^2 with a precision of ~0.5%. Many of our observations, together with a recent electronic compressibility measurement performed in graphene bilayers on hexagonal boron-nitride (hBN) substrates, are consistent with a recent theory that accounts for the effect of the degeneracy between the N=0 and N=1 Landau levels in the fractional quantum Hall effect, and predicts the occurrence of a Moore-Read type nu = -1/2 state. Owing to the experimental flexibility of bilayer graphene --which has a gate-dependent band structure, can be easily accessed by scanning probes, and can be contacted with materials such as superconductors--, our findings offer new possibilities to explore the microscopic nature of even-denominator fractional quantum Hall effect.
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Submitted 10 March, 2014; v1 submitted 21 May, 2013;
originally announced May 2013.
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A ballistic pn junction in suspended graphene with split bottom gates
Authors:
Anya L. Grushina,
Dong-Keun Ki,
Alberto F. Morpurgo
Abstract:
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as a function of gate voltage, magnetic field, bias, and temperature exhibit characteristic Fabry-Perot oscillations in the cavities formed by the pn junction and…
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We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as a function of gate voltage, magnetic field, bias, and temperature exhibit characteristic Fabry-Perot oscillations in the cavities formed by the pn junction and each of the contacts, with transport occurring in the ballistic regime. Our results demonstrate the possibility to achieve a high degree of control on the local electronic properties of ultra-clean suspended graphene layers, a key aspect for the realization of new graphene nanostructures.
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Submitted 25 April, 2013;
originally announced April 2013.
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Identification of a strong contamination source for graphene in vacuum systems
Authors:
Christophe Caillier,
Dong-Keun Ki,
Yuliya Lisunova,
Iaroslav Gaponenko,
Patrycja Paruch,
Alberto F. Morpurgo
Abstract:
To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene due to chemical species generated by common ion high-vacuum gauges. The effect --reversible upon exposing graphene to air-- is significant, as doping rates can l…
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To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene due to chemical species generated by common ion high-vacuum gauges. The effect --reversible upon exposing graphene to air-- is significant, as doping rates can largely exceed 10^{12} cm^{-2}/hour, depending on pressure and the relative position of the gauge and the graphene device. It is important to be aware of the phenomenon, as its basic manifestation can be mistakenly interpreted as vacuum-induced desorption of p-dopants.
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Submitted 8 November, 2013; v1 submitted 21 February, 2013;
originally announced February 2013.
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Crossover from Coulomb blockade to quantum Hall effect in suspended graphene nanoribbons
Authors:
Dong-Keun Ki,
Alberto F. Morpurgo
Abstract:
Suspended graphene nano-ribbons formed during current annealing of suspended graphene flakes have been investigated experimentally. Transport measurements show the opening of a transport gap around charge neutrality due to the formation of "Coulomb islands", coexisting with quantum Hall conductance plateaus appearing at moderate values of magnetic field $B$. Upon increasing $B$, the transport gap…
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Suspended graphene nano-ribbons formed during current annealing of suspended graphene flakes have been investigated experimentally. Transport measurements show the opening of a transport gap around charge neutrality due to the formation of "Coulomb islands", coexisting with quantum Hall conductance plateaus appearing at moderate values of magnetic field $B$. Upon increasing $B$, the transport gap is rapidly suppressed, and is taken over by a much larger energy gap due to electronic correlations. Our observations show that suspended nano-ribbons allow the investigation of phenomena that could not so far be accessed in ribbons on SiO$_2$ substrates.
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Submitted 25 May, 2012; v1 submitted 2 March, 2012;
originally announced March 2012.
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Ballistic transport of graphene pnp junctions with embedded local gates
Authors:
Seung-Geol Nam,
Dong-Keun Ki,
Jong Wan Park,
Youngwook Kim,
Jun Sung Kim,
Hu-Jong Lee
Abstract:
We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observ…
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We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a 130-nm-wide local gate, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very distinctive from top-gated devices. It was caused as the electric field arising from the global back gate is strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.
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Submitted 1 September, 2011;
originally announced September 2011.
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Thermoelectric Transport of Massive Dirac Fermions in Bilayer Graphene
Authors:
Seung-Geol Nam,
Dong-Keun Ki,
Hu-Jong Lee
Abstract:
Thermoelectric power (TEP) is measured in bilayer graphene for various temperatures and charge-carrier densities. At low temperatures, measured TEP well follows the semiclassical Mott formula with a hyperbolic dispersion relation. TEP for a high carrier density shows a linear temperature dependence, which demonstrates a weak electron-phonon interaction in the bilayer graphene. For a low carrier de…
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Thermoelectric power (TEP) is measured in bilayer graphene for various temperatures and charge-carrier densities. At low temperatures, measured TEP well follows the semiclassical Mott formula with a hyperbolic dispersion relation. TEP for a high carrier density shows a linear temperature dependence, which demonstrates a weak electron-phonon interaction in the bilayer graphene. For a low carrier density, a deviation from the Mott relation is observed at high temperatures and is attributed to the low Fermi temperature in the bilayer graphene. Oscillating TEP and the Nernst effect for varying carrier density, observed in a high magnetic field, are qualitatively explained by the two dimensionality of the system.
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Submitted 13 December, 2010; v1 submitted 26 May, 2010;
originally announced May 2010.
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Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet
Authors:
Dong-Keun Ki,
Seung-Geol Nam,
Hu-Jong Lee,
Barbaros Oezyilmaz
Abstract:
By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor ($ν$) of the entire graphene vanishes. This resistance asymmetry is caused…
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By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor ($ν$) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral-direction-dependent change of the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge states in a bipolar graphene system.
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Submitted 14 December, 2009;
originally announced December 2009.
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Observation of chiral quantum-Hall edge states in graphene
Authors:
Dong-Keun Ki,
Sanghyun Jo,
Hu-Jong Lee
Abstract:
In this study, we determined the chiral direction of the quantum-Hall (QH) edge states in graphene by adopting simple two-terminal conductance measurements while grounding different edge positions of the sample. The edge state with a smaller filling factor is found to more strongly interact with the electric contacts. This simple method can be conveniently used to investigate the chirality of th…
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In this study, we determined the chiral direction of the quantum-Hall (QH) edge states in graphene by adopting simple two-terminal conductance measurements while grounding different edge positions of the sample. The edge state with a smaller filling factor is found to more strongly interact with the electric contacts. This simple method can be conveniently used to investigate the chirality of the QH edge state with zero filling factor in graphene, which is important to understand the symmetry breaking sequence in high magnetic fields ($\gtrsim$25 T).
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Submitted 6 May, 2009;
originally announced May 2009.
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Quantum Hall resistances of multiterminal top-gated graphene device
Authors:
Dong-Keun Ki,
Hu-Jong Lee
Abstract:
Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall (QH) regime. In sharp distinction from previous two-terminal studies [J. R. Williams \textit{et al.}, Science {\bf 317}, 638 (2007); B. Özyilmaz \textit{et al.}, Phys. Rev. Lett. {\bf 99}, 166804 (2007)], asymmetric QH resistances are observed, which provide information…
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Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall (QH) regime. In sharp distinction from previous two-terminal studies [J. R. Williams \textit{et al.}, Science {\bf 317}, 638 (2007); B. Özyilmaz \textit{et al.}, Phys. Rev. Lett. {\bf 99}, 166804 (2007)], asymmetric QH resistances are observed, which provide information on reflection as well as transmission of the QH edge states. Most quantized values of resistances are well analyzed by the assumption that all edge states are equally populated. Contrary to the expectation, however, a 5/2 transmission of the edge states is also found, which may be caused by incomplete mode mixing and/or by the presence of counter-propagating edge states. This four-terminal scheme can be conveniently used to study the edge-state equilibration in locally gated graphene devices as well as mono- and multi-layer graphene hybrid structures.
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Submitted 28 May, 2009; v1 submitted 2 March, 2009;
originally announced March 2009.
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Inelastic scattering in a monolayer graphene sheet; a weak-localization study
Authors:
Dong-Keun Ki,
Dongchan Jeong,
Jae-Hyun Choi,
Kee-Su Park,
Hu-Jong Lee
Abstract:
Charge carriers in a graphene sheet, a single layer of graphite, exhibit much distinctive characteristics to those in other two-dimensional electronic systems because of their chiral nature. In this report, we focus on the observation of weak localization in a graphene sheet exfoliated from a piece of natural graphite and nano-patterned into a Hall-bar geometry. Much stronger chiral-symmetry-bre…
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Charge carriers in a graphene sheet, a single layer of graphite, exhibit much distinctive characteristics to those in other two-dimensional electronic systems because of their chiral nature. In this report, we focus on the observation of weak localization in a graphene sheet exfoliated from a piece of natural graphite and nano-patterned into a Hall-bar geometry. Much stronger chiral-symmetry-breaking elastic intervalley scattering in our graphene sheet restores the conventional weak localization. The resulting carrier-density and temperature dependence of the phase coherence length reveal that the electron-electron interaction including a direct Coulomb interaction is the main inelastic scattering factor while electron-hole puddles enhance the inelastic scattering near the Dirac point.
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Submitted 19 August, 2008;
originally announced August 2008.
