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Development of a Nb-based semiconductor-superconductor hybrid platform
Authors:
Sjoerd Telkamp,
Tommaso Antonelli,
Clemens Todt,
Manuel Hinderling,
Marco Coraiola,
Daniel Haxell,
Sofieke C. ten Kate,
Deividas Sabonis,
Peng Zeng,
Rüdiger Schott,
Erik Cheah,
Christian Reichl,
Fabrizio Nichele,
Filip Krizek,
Werner Wegscheider
Abstract:
Semiconductor-superconductor hybrid materials are used as a platform to realise Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and superconductor, which are typically realised by in-situ deposition of an Al superconducting layer. Here we present a hybrid material based on an InAs two-dimensional electro…
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Semiconductor-superconductor hybrid materials are used as a platform to realise Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and superconductor, which are typically realised by in-situ deposition of an Al superconducting layer. Here we present a hybrid material based on an InAs two-dimensional electron gas (2DEG) combined with in-situ deposited Nb and NbTi superconductors, which offer a larger operating range in temperature and magnetic field due to their larger superconducting gap. We overcome the inherent difficulty associated with the formation of an amorphous interface between III-V semiconductors and Nb-based superconductors by introducing a 7 nm Al interlayer. The Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs 2DEG. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor-semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms.
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Submitted 20 August, 2024;
originally announced August 2024.
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Direct microwave spectroscopy of Andreev bound states in planar Ge Josephson junctions
Authors:
M. Hinderling,
S. C. ten Kate,
M. Coraiola,
D. Z. Haxell,
M. Stiefel,
M. Mergenthaler,
S. Paredes,
S. W. Bedell,
D. Sabonis,
F. Nichele
Abstract:
We demonstrate microwave measurements of the Andreev bound state (ABS) spectrum in planar Josephson junctions (JJs) defined in Ge high mobility two-dimensional hole gases contacted by superconducting PtSiGe. The JJs and readout circuitry are located on separate chips and inductively coupled via flip-chip bonding. For a device with $350~\mathrm{nm}$ junction length, spectroscopic signatures were co…
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We demonstrate microwave measurements of the Andreev bound state (ABS) spectrum in planar Josephson junctions (JJs) defined in Ge high mobility two-dimensional hole gases contacted by superconducting PtSiGe. The JJs and readout circuitry are located on separate chips and inductively coupled via flip-chip bonding. For a device with $350~\mathrm{nm}$ junction length, spectroscopic signatures were consistent with the short-junction limit, with an induced superconducting gap $Δ^{*}\approx48~\mathrm{μeV}$ and transmission $τ\approx 0.94$. The interaction between the highest-transmission ABS and the resonator was well described by a Jaynes-Cummings model with a vacuum Rabi splitting of approximately $6~\mathrm{MHz}$. A device with junction length of $1~μm$ showed an ABS spectrum consistent with a long junction model. Time-resolved monitoring of the readout resonator in the dispersive regime revealed gate-voltage tunable junction parity fluctuations on the timescale of seconds. Our work indicates a viable path towards hybrid quantum devices based on planar Ge.
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Submitted 6 March, 2024;
originally announced March 2024.
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Flux-Tunable Josephson Diode Effect in a Hybrid Four-Terminal Josephson Junction
Authors:
M. Coraiola,
A. E. Svetogorov,
D. Z. Haxell,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
J. C. Cuevas,
W. Belzig,
F. Nichele
Abstract:
We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect, with switching currents that depend on the sign of the bias current. The superconducting diode efficiency, reaching a maximum of $|η|\approx34\%$, is widely tunable - both in amplitude and…
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We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect, with switching currents that depend on the sign of the bias current. The superconducting diode efficiency, reaching a maximum of $|η|\approx34\%$, is widely tunable - both in amplitude and sign - as a function of magnetic fluxes and gate voltages. Our observations are supported by a circuit model of three parallel Josephson junctions with non-sinusoidal current-phase relation. With respect to conventional Josephson interferometers, phase-tunable multiterminal Josephson junctions enable large diode efficiencies in structurally symmetric devices, where local magnetic fluxes break both time-reversal and spatial-inversion symmetries. Our work establishes a pathway to develop Josephson diodes with wide-range tunability and that do not rely on exotic materials or externally applied magnetic fields.
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Submitted 11 December, 2023; v1 submitted 7 December, 2023;
originally announced December 2023.
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Flip-chip-based fast inductive parity readout of a planar superconducting island
Authors:
M. Hinderling,
S. C. ten Kate,
D. Z. Haxell,
M. Coraiola,
S. Paredes,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
D. Sabonis,
F. Nichele
Abstract:
Properties of superconducting devices depend sensitively on the parity (even or odd) of the quasiparticles they contain. Encoding quantum information in the parity degree of freedom is central in several emerging solid-state qubit architectures. Yet, accurate, non-destructive, and time-resolved parity measurement is a challenging and long-standing issue. Here we report on control and real-time par…
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Properties of superconducting devices depend sensitively on the parity (even or odd) of the quasiparticles they contain. Encoding quantum information in the parity degree of freedom is central in several emerging solid-state qubit architectures. Yet, accurate, non-destructive, and time-resolved parity measurement is a challenging and long-standing issue. Here we report on control and real-time parity measurement in a superconducting island embedded in a superconducting loop and realized in a hybrid two-dimensional heterostructure using a microwave resonator. Device and readout resonator are located on separate chips, connected via flip-chip bonding, and couple inductively through vacuum. The superconducting resonator detects the parity-dependent circuit inductance, allowing for fast and non-destructive parity readout. We resolved even and odd parity states with signal-to-noise ratio SNR $\approx3$ with an integration time of $20~μ$s and detection fidelity exceeding 98%. Real-time parity measurement showed state lifetime extending into millisecond range. Our approach will lead to better understanding of coherence-limiting mechanisms in superconducting quantum hardware and provide novel readout schemes for hybrid qubits.
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Submitted 13 July, 2023;
originally announced July 2023.
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Spin-degeneracy breaking and parity transitions in three-terminal Josephson junctions
Authors:
M. Coraiola,
D. Z. Haxell,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
Harnessing spin and parity degrees of freedom is of fundamental importance for the realization of emergent quantum devices. Nanostructures embedded in superconductor--semiconductor hybrid materials offer novel and yet unexplored routes for addressing and manipulating fermionic modes. Here we spectroscopically probe the two-dimensional band structure of Andreev bound states in a phase-controlled hy…
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Harnessing spin and parity degrees of freedom is of fundamental importance for the realization of emergent quantum devices. Nanostructures embedded in superconductor--semiconductor hybrid materials offer novel and yet unexplored routes for addressing and manipulating fermionic modes. Here we spectroscopically probe the two-dimensional band structure of Andreev bound states in a phase-controlled hybrid three-terminal Josephson junction. Andreev bands reveal spin-degeneracy breaking, with level splitting in excess of 9 GHz, and zero-energy crossings associated to ground state fermion parity transitions, in agreement with theoretical predictions. Both effects occur without the need of external magnetic fields or sizable charging energies and are tuned locally by controlling superconducting phase differences. Our results highlight the potential of multiterminal hybrid devices for engineering quantum states.
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Submitted 13 July, 2023;
originally announced July 2023.
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Zeeman and Orbital Driven Phase Transitions in Planar Josephson Junctions
Authors:
D. Z. Haxell,
M. Coraiola,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field, and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe…
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We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field, and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe gate-dependent phase shifts of up to ${\varphi_{0}=0.5π}$ which are consistent with a Zeeman field coupling to highly-transmissive Andreev bound states via Rashba spin-orbit interaction. A distinct phase shift emerges at larger fields, concomitant with a switching current minimum and the closing and reopening of the superconducting gap. These signatures of an induced phase transition, which might resemble a topological transition, scale with the superconducting lead size, demonstrating the crucial role of orbital effects. Our results elucidate the interplay of Zeeman, spin-orbit and orbital effects in InAs/Al JJs, giving new understanding to phase transitions in hybrid JJs and their applications in quantum computing and superconducting electronics.
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Submitted 5 June, 2023; v1 submitted 2 June, 2023;
originally announced June 2023.
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Demonstration of nonlocal Josephson effect in Andreev molecules
Authors:
D. Z. Haxell,
M. Coraiola,
M. Hinderling,
S. C. ten Kate,
D. Sabonis,
A. E. Svetogorov,
W. Belzig,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
We perform switching current measurements of planar Josephson junctions (JJs) coupled by a common superconducting electrode, with independent control over the two superconducting phase differences. We observe an anomalous phase shift in the current--phase relation of a JJ as a function of gate voltage or phase difference in the second JJ. This demonstrates a nonlocal Josephson effect, and the impl…
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We perform switching current measurements of planar Josephson junctions (JJs) coupled by a common superconducting electrode, with independent control over the two superconducting phase differences. We observe an anomalous phase shift in the current--phase relation of a JJ as a function of gate voltage or phase difference in the second JJ. This demonstrates a nonlocal Josephson effect, and the implementation of a $\varphi_0$-junction which is tunable both electrostatically and magnetically. The anomalous phase shift was larger for shorter distances between the JJs and vanished for distances much longer than the superconducting coherence length. Results are consistent with the hybridization of ABSs, leading to the formation of an Andreev molecule. Our devices constitute a realization of a tunable superconducting phase source, and could enable new coupling schemes for hybrid quantum devices.
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Submitted 4 July, 2023; v1 submitted 1 June, 2023;
originally announced June 2023.
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Phase-engineering the Andreev band structure of a three-terminal Josephson junction
Authors:
M. Coraiola,
D. Z. Haxell,
D. Sabonis,
H. Weisbrich,
A. E. Svetogorov,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
J. C. Cuevas,
W. Belzig,
F. Nichele
Abstract:
In hybrid Josephson junctions with three or more superconducting terminals coupled to a semiconducting region, Andreev bound states may form unconventional energy band structures, or Andreev matter, which are engineered by controlling superconducting phase differences. Here we report tunnelling spectroscopy measurements of three-terminal Josephson junctions realised in an InAs/Al heterostructure.…
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In hybrid Josephson junctions with three or more superconducting terminals coupled to a semiconducting region, Andreev bound states may form unconventional energy band structures, or Andreev matter, which are engineered by controlling superconducting phase differences. Here we report tunnelling spectroscopy measurements of three-terminal Josephson junctions realised in an InAs/Al heterostructure. The three terminals are connected to form two loops, enabling independent control over two phase differences and access to a synthetic Andreev band structure in the two-dimensional phase space. Our results demonstrate a phase-controlled Andreev molecule, originating from two discrete Andreev levels that spatially overlap and hybridise. Signatures of hybridisation are observed in the form of avoided crossings in the spectrum and band structure anisotropies in the phase space, all explained by a numerical model. Future extensions of this work could focus on addressing spin-resolved energy levels, ground state fermion parity transitions and Weyl bands in multiterminal geometries.
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Submitted 11 December, 2023; v1 submitted 28 February, 2023;
originally announced February 2023.
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Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems
Authors:
E. Cheah,
D. Z. Haxell,
R. Schott,
P. Zeng,
E. Paysen,
S. C. ten Kate,
M. Coraiola,
M. Landstetter,
A. B. Zadeh,
A. Trampert,
M. Sousa,
H. Riel,
F. Nichele,
W. Wegscheider,
F. Krizek
Abstract:
In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures a…
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In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures and two-dimensional electron gases. In contrast to the well-developed semiconductor parts of the hybrid materials, the direct effect of the crystal nanotexture of Al films on the electron transport still remains unclear. This is mainly due to the complex epitaxial relation between Al and the semiconductor. We present a study of Al films on shallow InAs two-dimensional electron gas systems grown by molecular beam epitaxy, with focus on control of the Al crystal structure. We identify the dominant grain types present in our Al films and show that the formation of grain boundaries can be significantly reduced by controlled roughening of the epitaxial interface. Finally, we demonstrate that the implemented roughening does not negatively impact either the electron mobility of the two-dimensional electron gas or the basic superconducting properties of the proximitized system.
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Submitted 17 January, 2023;
originally announced January 2023.
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Flip-chip-based microwave spectroscopy of Andreev bound states in a planar Josephson junction
Authors:
M. Hinderling,
D. Sabonis,
S. Paredes,
D. Z. Haxell,
M. Coraiola,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
We demonstrate a flip-chip-based approach to microwave measurements of Andreev bound states in a gate-tunable planar Josephson junction using inductively-coupled superconducting low-loss resonators. By means of electrostatic gating, we present control of both the density and transmission of Andreev bound states. Phase biasing of the device shifted the resonator frequency, consistent with the modul…
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We demonstrate a flip-chip-based approach to microwave measurements of Andreev bound states in a gate-tunable planar Josephson junction using inductively-coupled superconducting low-loss resonators. By means of electrostatic gating, we present control of both the density and transmission of Andreev bound states. Phase biasing of the device shifted the resonator frequency, consistent with the modulation of supercurrent in the junction. Two-tone spectroscopy measurements revealed an isolated Andreev bound state consistent with an average induced superconducting gap of $184~\mathrm{μeV}$ and a gate-tunable transmission approaching $0.98$. Our results represent the feasibility of using the flip-chip technique to address and study Andreev bound states in planar Josephson junctions, and they give a promising path towards microwave applications with superconductor-semiconductor two-dimensional materials.
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Submitted 17 January, 2023; v1 submitted 21 December, 2022;
originally announced December 2022.
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Microwave-induced conductance replicas in hybrid Josephson junctions without Floquet-Andreev states
Authors:
D. Z. Haxell,
M. Coraiola,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
W. Belzig,
J. C. Cuevas,
F. Nichele
Abstract:
Light-matter interaction enables engineering of non-equilibrium quantum systems. In condensed matter, spatially and temporally cyclic Hamiltonians are expected to generate energy-periodic Floquet states, with properties inaccessible at thermal equilibrium. A recent work explored the tunnelling conductance of a planar Josephson junction under microwave irradiation, and interpreted replicas of condu…
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Light-matter interaction enables engineering of non-equilibrium quantum systems. In condensed matter, spatially and temporally cyclic Hamiltonians are expected to generate energy-periodic Floquet states, with properties inaccessible at thermal equilibrium. A recent work explored the tunnelling conductance of a planar Josephson junction under microwave irradiation, and interpreted replicas of conductance features as evidence of steady Floquet-Andreev states. Here we realise a similar device in a hybrid superconducting-semiconducting heterostructure, which utilises a tunnelling probe with gate-tunable transparency and allows simultaneous measurements of Andreev spectrum and current-phase relation of the planar Josephson junction. We show that, in our devices, spectral replicas in sub-gap conductance emerging under microwave irradiation are caused by photon assisted tunnelling of electrons into Andreev states. The current-phase relation under microwave irradiation is also explained by the interaction of Andreev states with microwave photons, without the need to invoke Floquet states. The techniques outlined in this study establish a baseline to distinguish photon assisted tunnelling from Floquet-Andreev states in mesoscopic devices, a crucial development towards understanding light-matter coupling in hybrid nanostructures.
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Submitted 16 June, 2023; v1 submitted 7 December, 2022;
originally announced December 2022.
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Large even-odd spacing and $g$-factor anisotropy in PbTe quantum dots
Authors:
S. C. ten Kate,
M. F. Ritter,
A. Fuhrer,
J. Jung,
S. G. Schellingerhout,
E. P. A. M. Bakkers,
H. Riel,
F. Nichele
Abstract:
PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-o…
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PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron $g$-factor as a function of magnetic field direction. We find the $g$-factor tensor to be highly anisotropic, with principal $g$-factors ranging from 0.9 to 22.4, and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots.
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Submitted 13 May, 2022;
originally announced May 2022.
