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Polarization dynamics in quantum dots: The role of dark excitons
Authors:
E. Tsitsishvili,
H. Kalt
Abstract:
We study an impact of the fine structure of the heavy--hole ground state exciton confined in semiconductor quantum dots on the photoluminescence polarization dynamics solving the relevant system of the rate equations. The presence of the dark excitons is usually ignored and the polarization decay is assumed to be caused by direct transitions within the radiative doublet. We demonstrate that in str…
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We study an impact of the fine structure of the heavy--hole ground state exciton confined in semiconductor quantum dots on the photoluminescence polarization dynamics solving the relevant system of the rate equations. The presence of the dark excitons is usually ignored and the polarization decay is assumed to be caused by direct transitions within the radiative doublet. We demonstrate that in strongly confined quantum dots the dark excitons, which are energetically well below the bright excitons, have actually a decisive effect on the polarization dynamics due to their persistent nature. The linear polarization shows nonexponential decay controlled by a conversion of the dark into a bright exciton. To get quantitative answers for specific quantum dot structures, all the necessary information can be obtained already from experiments on the luminescence dynamics following nonresonant excitation in these dots.
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Submitted 20 February, 2014;
originally announced February 2014.
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A spintronic source of circularly polarized single photons
Authors:
Pablo Asshoff,
Andreas Merz,
Heinz Kalt,
Michael Hetterich
Abstract:
We present a spintronic single photon source which emits circularly polarized light, where the helicity is determined by an applied magnetic field. Photons are emitted from an InGaAs quantum dot inside an electrically operated spin light-emitting diode, which comprises the diluted magnetic semiconductor ZnMnSe. The circular polarization degree of the emitted light is high, reaching 83% at an appli…
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We present a spintronic single photon source which emits circularly polarized light, where the helicity is determined by an applied magnetic field. Photons are emitted from an InGaAs quantum dot inside an electrically operated spin light-emitting diode, which comprises the diluted magnetic semiconductor ZnMnSe. The circular polarization degree of the emitted light is high, reaching 83% at an applied magnetic field of 2T and 96% at 6 T. Autocorrelation traces recorded in pulsed operation mode prove the emitted light to be antibunched. The two circular polarization states could be used for representing quantum states |0> and |1> in quantum cryptography implementations.
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Submitted 6 March, 2011;
originally announced March 2011.
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Exciton spin relaxation in single semiconductor quantum dots
Authors:
E. Tsitsishvili,
R. v. Baltz,
H. Kalt
Abstract:
We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation rates are found to depend strongly on the dot size, magnetic field and temperature. For typical quantum dots and temperatures below 100 K, the zero--magnetic f…
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We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation rates are found to depend strongly on the dot size, magnetic field and temperature. For typical quantum dots and temperatures below 100 K, the zero--magnetic field relaxation times are long compared to the exciton lifetime, yet they are strongly reduced in high magnetic fields. We discuss explicitly quantum dots based on (In,Ga)As and (Cd,Zn)Se semiconductor compounds.
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Submitted 23 April, 2003;
originally announced April 2003.
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Hot exciton transport in ZnSe quantum wells
Authors:
Hui Zhao,
Sebastian Moehl,
Sven Wachter,
Heinz Kalt
Abstract:
The in-plane transport of excitons in ZnSe quantum wells is investigated directly by microphotoluminescence in combination with a solid immersion lens. Due to the strong Froehlich coupling, the initial kinetic energy of the excitons is well controlled by choosing the excess energy of the excitation laser. When increasing the laser excess energy, we find a general trend of increasing transport le…
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The in-plane transport of excitons in ZnSe quantum wells is investigated directly by microphotoluminescence in combination with a solid immersion lens. Due to the strong Froehlich coupling, the initial kinetic energy of the excitons is well controlled by choosing the excess energy of the excitation laser. When increasing the laser excess energy, we find a general trend of increasing transport length and more importantly a pronounced periodic quenching of the transport length when the excess energy corresponds to multiples of the LO-phonon energy. Such features show the dominant role of the kinetic energy of excitons in the transport process. Together with the excitation intensity dependence of the transport length, we distinguish the phonon wind driven transport of cold excitons and defect-limited hot exciton transport.
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Submitted 16 September, 2002;
originally announced September 2002.
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Solid immersion lens-enhanced micro-photoluminescence: principle and applications
Authors:
S. Moehl,
Hui Zhao,
B. Dal Don,
S. Wachter,
H. Kalt
Abstract:
We demonstrate the combination of a hemispherical solid immersion lens with a micro-photoluminescence setup. Two advantages introduced by the SIL, an improved resolution of 0.4 times the wavelength in vacuum and a 5 times enhancement of the collection efficiency, make it an ideal system for spatially resolved spectroscopy applications. The influence of the air gap between the SIL and the sample…
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We demonstrate the combination of a hemispherical solid immersion lens with a micro-photoluminescence setup. Two advantages introduced by the SIL, an improved resolution of 0.4 times the wavelength in vacuum and a 5 times enhancement of the collection efficiency, make it an ideal system for spatially resolved spectroscopy applications. The influence of the air gap between the SIL and the sample surface is investigated in detail. We confirm the tolerance of the set--up to an air gap of several micrometers. Such a system is proven to be ideal system in the studies of exciton transport and polarization dependent single quantum dot spectroscopy.
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Submitted 11 July, 2002;
originally announced July 2002.
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Spatio-temporal dynamics of quantum-well excitons
Authors:
Hui Zhao,
B. Dal Don,
S. Moehl,
H. Kalt,
K. Ohkawa,
D. Hommel
Abstract:
We investigate the lateral transport of excitons in ZnSe quantum wells by using time-resolved micro-photoluminescence enhanced by the introduction of a solid immersion lens. The spatial and temporal resolutions are 200 nm and 5 ps, respectively. Strong deviation from classical diffusion is observed up to 400 ps. This feature is attributed to the hot-exciton effects, consistent with previous expe…
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We investigate the lateral transport of excitons in ZnSe quantum wells by using time-resolved micro-photoluminescence enhanced by the introduction of a solid immersion lens. The spatial and temporal resolutions are 200 nm and 5 ps, respectively. Strong deviation from classical diffusion is observed up to 400 ps. This feature is attributed to the hot-exciton effects, consistent with previous experiments under cw excitation. The coupled transport-relaxation process of hot excitons is modelled by Monte Carlo simulation. We prove that two basic assumptions typically accepted in photoluminescence investigations on excitonic transport, namely (i) the classical diffusion model as well as (ii) the equivalence between the temporal and spatial evolution of the exciton population and of the measured photoluminescence, are not valid for low-temperature experiments.
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Submitted 4 November, 2002; v1 submitted 12 July, 2002;
originally announced July 2002.
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Coherence Length of Excitons in a Semiconductor Quantum Well
Authors:
Hui Zhao,
Sebastian Moehl,
Heinz Kalt
Abstract:
We report on the first experimental determination of the coherence length of excitons in semiconductors using the combination of spatially resolved photoluminescence with phonon sideband spectroscopy. The coherence length of excitons in ZnSe quantum wells is determined to be 300 ~ 400 nm, about 25 ~ 30 times the exciton de Broglie wavelength. With increasing exciton kinetic energy, the coherence…
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We report on the first experimental determination of the coherence length of excitons in semiconductors using the combination of spatially resolved photoluminescence with phonon sideband spectroscopy. The coherence length of excitons in ZnSe quantum wells is determined to be 300 ~ 400 nm, about 25 ~ 30 times the exciton de Broglie wavelength. With increasing exciton kinetic energy, the coherence length decreases slowly. The discrepancy between the coherence lengths measured and calculated by only considering the acoustic phonon scattering suggests an important influence of static disorder.
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Submitted 12 August, 2002; v1 submitted 7 July, 2002;
originally announced July 2002.
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Effect of quantum confinement on exciton-phonon interactions
Authors:
Hui Zhao,
Sven Wachter,
Heinz Kalt
Abstract:
We investigate the homogeneous linewidth of localized type-I excitons in type-II GaAs/AlAs superlattices. These localizing centers represent the intermediate case between quasi-two-dimensional (Q2D) and quasi-zero-dimensional localizations. The temperature dependence of the homogeneous linewidth is obtained with high precision from micro-photoluminescence spectra. We confirm the reduced interact…
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We investigate the homogeneous linewidth of localized type-I excitons in type-II GaAs/AlAs superlattices. These localizing centers represent the intermediate case between quasi-two-dimensional (Q2D) and quasi-zero-dimensional localizations. The temperature dependence of the homogeneous linewidth is obtained with high precision from micro-photoluminescence spectra. We confirm the reduced interaction of the excitons with their environment with decreasing dimensionality except for the coupling to LO-phonons. The low-temperature limit for the linewidth of these localized excitons is five times smaller than that of Q2D excitons. The coefficient of exciton-acoustic-phonon interaction is 5 ~ 6 times smaller than that of Q2D excitons. An enhancement of the average exciton-LO-phonon interaction by localization is found in our sample. But this interaction is very sensitive to the detailed structure of the localizing centers.
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Submitted 16 September, 2002; v1 submitted 4 July, 2002;
originally announced July 2002.
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Temperature dependence of polarization relaxation in semiconductor quantum dots
Authors:
E. Tsitsishvili,
R. v. Baltz,
H. Kalt
Abstract:
The decay time of the linear polarization degree of the luminescence in strongly confined semiconductor quantum dots with asymmetrical shape is calculated in the frame of second-order quasielastic interaction between quantum dot charge carriers and LO phonons. The phonon bottleneck does not prevent significantly the relaxation processes and the calculated decay times can be of the order of a few…
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The decay time of the linear polarization degree of the luminescence in strongly confined semiconductor quantum dots with asymmetrical shape is calculated in the frame of second-order quasielastic interaction between quantum dot charge carriers and LO phonons. The phonon bottleneck does not prevent significantly the relaxation processes and the calculated decay times can be of the order of a few tens picoseconds at temperature $T \simeq 100$K, consistent with recent experiments by Paillard et al. [Phys. Rev. Lett. {\bf86}, 1634 (2001)].
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Submitted 5 November, 2002; v1 submitted 12 June, 2002;
originally announced June 2002.
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Energy relaxation during hot-exciton transport in quantum wells: Direct observation by spatially resolved phonon-sideband spectroscopy
Authors:
Hui Zhao,
Sebastian Moehl,
Heinz Kalt
Abstract:
We investigate the energy relaxation of excitons during the real-space transport in ZnSe quantum wells by using microphotoluminescence with spatial resolution enhanced by a solid immersion lens. The spatial evolution of the LO-phonon sideband, originating from the LO-phonon assisted recombination of hot excitons, is measured directly. By calculating the LO-phonon assisted recombination probabili…
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We investigate the energy relaxation of excitons during the real-space transport in ZnSe quantum wells by using microphotoluminescence with spatial resolution enhanced by a solid immersion lens. The spatial evolution of the LO-phonon sideband, originating from the LO-phonon assisted recombination of hot excitons, is measured directly. By calculating the LO-phonon assisted recombination probability, we obtain the nonthermal energy distribution of excitons and observe directly the energy relaxation of hot excitons during their transport. We find the excitons remain hot during their transport on a length scale of several micrometers. Thus, the excitonic transport on this scale cannot be described by classical diffusion.
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Submitted 16 September, 2002; v1 submitted 3 May, 2002;
originally announced May 2002.
