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Tomographic Imaging of Orbital Vortex Lines in Three-Dimensional Momentum Space
Authors:
T. Figgemeier,
M. Ünzelmann,
P. Eck,
J. Schusser,
L. Crippa,
J. N. Neu,
B. Geldiyev,
P. Kagerer,
J. Buck,
M. Kalläne,
M. Hoesch,
K. Rossnagel,
T. Siegrist,
L. -K. Lim,
R. Moessner,
G. Sangiovanni,
D. Di Sante,
F. Reinert,
H. Bentmann
Abstract:
We report the experimental discovery of orbital vortex lines in the three-dimensional (3D) band structure of a topological semimetal. Combining linear and circular dichroism in soft x-ray angle-resolved photoemission (SX-ARPES) with first-principles theory, we image the winding of atomic orbital angular momentum, thereby revealing - and determining the location of - lines of vorticity in full 3D m…
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We report the experimental discovery of orbital vortex lines in the three-dimensional (3D) band structure of a topological semimetal. Combining linear and circular dichroism in soft x-ray angle-resolved photoemission (SX-ARPES) with first-principles theory, we image the winding of atomic orbital angular momentum, thereby revealing - and determining the location of - lines of vorticity in full 3D momentum space. Our observation of momentum-space vortex lines with quantized winding number establishes an analogue to real-space quantum vortices, for instance, in type-II superconductors and certain non-collinear magnets. These results establish multimodal dichroism in SX-ARPES as an approach to trace 3D orbital textures. Our present findings particularly constitute the first imaging of non-trivial quantum-phase winding at line nodes and may pave the way to new orbitronic phenomena in quantum materials
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Submitted 20 June, 2024; v1 submitted 15 February, 2024;
originally announced February 2024.
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Strongly Anisotropic Spin and Orbital Rashba Effect at a Tellurium - Noble Metal Interface
Authors:
B. Geldiyev,
M. Ünzelmann,
P. Eck,
T. Kißlinger,
J. Schusser,
T. Figgemeier,
P. Kagerer,
N. Tezak,
M. Krivenkov,
A. Varykhalov,
A. Fedorov,
L. Nicolaï,
J. Minár,
K. Miyamoto,
T. Okuda,
K. Shimada,
D. Di Sante,
G. Sangiovanni,
L. Hammer,
M. A. Schneider,
H. Bentmann,
F. Reinert
Abstract:
We study the interplay of lattice, spin and orbital degrees of freedom in a two-dimensional model system: a flat square lattice of Te atoms on a Au(100) surface. The atomic structure of the Te monolayer is determined by scanning tunneling microscopy (STM) and quantitative low-energy electron diffraction (LEED-IV). Using spin- and angle-resolved photoelectron spectroscopy (ARPES) and density functi…
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We study the interplay of lattice, spin and orbital degrees of freedom in a two-dimensional model system: a flat square lattice of Te atoms on a Au(100) surface. The atomic structure of the Te monolayer is determined by scanning tunneling microscopy (STM) and quantitative low-energy electron diffraction (LEED-IV). Using spin- and angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT), we observe a Te-Au interface state with highly anisotropic Rashba-type spin-orbit splitting at the X point of the Brillouin zone. Based on a profound symmetry and tight-binding analysis, we show how in-plane square lattice symmetry and broken inversion symmetry at the Te-Au interface together enforce a remarkably anisotropic orbital Rashba effect which strongly modulates the spin splitting.
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Submitted 4 August, 2023;
originally announced August 2023.
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Intermixing-driven surface and bulk ferromagnetism in the quantum anomalous Hall candidate MnBi$_6$Te$_{10}$
Authors:
Abdul V. Tcakaev,
Bastian Rubrecht,
Jorge I. Facio,
Volodymyr B. Zabolotnyy,
Laura T. Corredor,
Laura C. Folkers,
Ekaterina Kochetkova,
Thiago R. F. Peixoto,
Philipp Kagerer,
Simon Heinze,
Hendrik Bentmann,
Robert J. Green,
Pierluigi Gargiani,
Manuel Valvidares,
Eugen Weschke,
Maurits W. Haverkort,
Friedrich Reinert,
Jeroen van den Brink,
Bernd Büchner,
Anja U. B. Wolter,
Anna Isaeva,
Vladimir Hinkov
Abstract:
The recent realizations of the quantum anomalous Hall effect (QAHE) in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ benchmark the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ family as a promising hotbed for further QAHE improvements. The family owes its potential to its ferromagnetically (FM) ordered MnBi$_2$Te$_4$ septuple layers (SL). However, the QAHE realization is complicated in MnBi$_2$Te$_4$ and MnBi$_4$Te…
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The recent realizations of the quantum anomalous Hall effect (QAHE) in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ benchmark the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ family as a promising hotbed for further QAHE improvements. The family owes its potential to its ferromagnetically (FM) ordered MnBi$_2$Te$_4$ septuple layers (SL). However, the QAHE realization is complicated in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ due to the substantial antiferromagnetic (AFM) coupling between the SL. An FM state, advantageous for the QAHE, can be stabilized by interlacing the SL with an increasing number $n$ of Bi$_2$Te$_3$ layers. However, the mechanisms driving the FM state and the number of necessary QLs are not understood, and the surface magnetism remains obscure. Here, we demonstrate robust FM properties in MnBi$_6$Te$_{10}$ ($n = 2$) with $T_C \approx 12$ K and establish their origin in the Mn/Bi intermixing phenomenon by a combined experimental and theoretical study. Our measurements reveal a magnetically intact surface with a large magnetic moment, and with FM properties similar to the bulk. Our investigation thus consolidates the MnBi$_6$Te$_{10}$ system as perspective for the QAHE at elevated temperatures.
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Submitted 2 February, 2023;
originally announced February 2023.
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A simple recipe to create three-dimensional reciprocal space maps
Authors:
Rafaela F. S. Penacchio,
Maurício B. Estradiote,
Sérgio L. Morelhão,
Celso I. Fornari,
Philipp Kagerer,
Marco Dittmar,
Simon Müller,
Friedrich Reinert
Abstract:
Combinations of advanced X-ray sources and zero-noise detector of enormous dynamic range have significantly increased the opportunity of mapping the reciprocal space of crystal lattices. It is particularly important in the design of new devices based on epitaxial thin films. In this work, we present a simple approach to the three-dimensional geometry involved in plotting reciprocal space maps, alo…
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Combinations of advanced X-ray sources and zero-noise detector of enormous dynamic range have significantly increased the opportunity of mapping the reciprocal space of crystal lattices. It is particularly important in the design of new devices based on epitaxial thin films. In this work, we present a simple approach to the three-dimensional geometry involved in plotting reciprocal space maps, along with an example of computer codes to allow X-ray users to write their own codes. Experimental data used to illustrate an application of the codes are from antimony telluride epitaxial film on barium difluoride substrate.
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Submitted 11 October, 2022;
originally announced October 2022.
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Two-dimensional ferromagnetic extension of a topological insulator
Authors:
P. Kagerer,
C. I. Fornari,
S. Buchberger,
T. Tschirner,
L. Veyrat,
M. Kamp,
A. V. Tcakaev,
V. Zabolotnyy,
S. L. Morelhão,
B. Geldiyev,
S. Müller,
A. Fedorov,
E. Rienks,
P. Gargiani,
M. Valvidares,
L. C. Folkers,
A. Isaeva,
B. Büchner,
V. Hinkov,
R. Claessen,
H. Bentmann,
F. Reinert
Abstract:
Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficien…
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Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficient overlap of TSS and the FM subsystem. Here, we take a different approach, namely FM extension, using a thin film of the 3D TI Bi$_2$Te$_3$, interfaced with a monolayer of the lattice-matched van der Waals ferromagnet MnBi$_2$Te$_4$. Robust 2D ferromagnetism with out-of-plane anisotropy and a critical temperature of $\text{T}_\text{c}\approx$~15 K is demonstrated by X-ray magnetic dichroism and electrical transport measurements. Using angle-resolved photoelectron spectroscopy, we observe the opening of a sizable magnetic gap in the 2D FM phase, while the surface remains gapless in the paramagnetic phase above T$_c$. This sizable gap indicates a relocation of the TSS to the FM ordered Mn moments near the surface, which leads to a large mutual overlap.
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Submitted 28 July, 2022;
originally announced July 2022.
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Simulation of X-ray diffraction in Mn$_x$Bi$_2$Te$_{3+x}$ epitaxic films
Authors:
Rafaela F. S. Penacchio,
Celso I. Fornari,
Yori G. Camillo,
Philipp Kagerer,
Sebastian Buchberger,
Martin Kamp,
Hendrik Bentmann,
Friedrich Reinert,
Sergio L. Morelhao
Abstract:
Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintronic and quantum computing. Structural analysis methods are essential to control and improve their synthesis in the form of thin films. Recently, X-rays…
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Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintronic and quantum computing. Structural analysis methods are essential to control and improve their synthesis in the form of thin films. Recently, X-rays tools have been proposed for structural modeling of disordered heterostructures [arXiv:2107.12280]. Here, we further evaluate the use of these tools to study the compound Mn$_x$Bi$_2$Te$_{3+x}$ in the grazing incidence region of the reflectivity curves, as well as the effect of thickness fluctuation in the wide angle region.
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Submitted 4 September, 2021;
originally announced September 2021.
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X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator
Authors:
Rafaela F. S. Penacchio,
Celso I. Fornari,
Yori G. Camillo,
Philipp Kagerer,
Sebastian Buchberger,
Martin Kamp,
Hendrik Bentmann,
Friedrich Reinert,
Sergio L. Morelhao
Abstract:
Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology a…
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Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology and magnetism. Weak vdW forces between atomic layers give rise to composition fluctuations and structural disorder that are difficult to control even in a typical binary topological insulators such as Bi2Te3. The addition of a third element as in MnBi2Te4 makes the epitaxy of these materials even more chaotic. In this work, statistical model structures of thin films on single crystal substrates are described. It allows the simulation of X-ray diffraction in disordered heterostructures, a necessary step towards controlling the epitaxial growth of these materials. On top of this, the diffraction simulation method described here can be readily applied as a general tool in the field of design new materials based on stacking of vdW bonded layers of distint elements.
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Submitted 26 July, 2021;
originally announced July 2021.
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Incipient antiferromagnetism in the Eu-doped topological insulator Bi$_2$Te$_3$
Authors:
Abdul Tcakaev,
Volodymyr B. Zabolotnyy,
Celso I. Fornari,
Philipp Rüßmann,
Thiago R. F. Peixoto,
Fabian Stier,
Michael Dettbarn,
Philipp Kagerer,
Eugen Weschke,
Enrico Schierle,
Peter Bencok,
Paulo H. O. Rappl,
Eduardo Abramof,
Hendrik Bentmann,
Eberhard Goering,
Friedrich Reinert,
Vladimir Hinkov
Abstract:
Rare earth ions typically exhibit larger magnetic moments than transition metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Yet, in a recent photoemission study of Eu-doped Bi$_2$Te$_3$ films, the spectra remained gapless down to $T = 20\;\text{K}$. Here, we scrutinize whether the conditions for a substantial gap formation in thi…
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Rare earth ions typically exhibit larger magnetic moments than transition metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Yet, in a recent photoemission study of Eu-doped Bi$_2$Te$_3$ films, the spectra remained gapless down to $T = 20\;\text{K}$. Here, we scrutinize whether the conditions for a substantial gap formation in this system are present by combining spectroscopic and bulk characterization methods with theoretical calculations. For all studied Eu doping concentrations, our atomic multiplet analysis of the $M_{4,5}$ x-ray absorption and magnetic circular dichroism spectra reveals a Eu$^{2+}$ valence and confirms a large magnetic moment, consistent with a $4f^7 \; {^8}S_{7/2}$ ground state. At temperatures below $10\;\text{K}$, bulk magnetometry indicates the onset of antiferromagnetic (AFM) ordering. This is in good agreement with density functional theory, which predicts AFM interactions between the Eu impurities. Our results support the notion that antiferromagnetism can coexist with topological surface states in rare-earth doped Bi$_2$Te$_3$ and call for spectroscopic studies in the kelvin range to look for novel quantum phenomena such as the quantum anomalous Hall effect.
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Submitted 24 September, 2020;
originally announced September 2020.
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Orbital Complexity in Intrinsic Magnetic Topological Insulators MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$
Authors:
R. C. Vidal,
H. Bentmann,
J. I. Facio,
T. Heider,
P. Kagerer,
C. I. Fornari,
T. R. F. Peixoto,
T. Figgemeier,
S. Jung,
C. Cacho,
B. Büchner,
J. van den Brink,
C. M. Schneider,
L. Plucinski,
E. F. Schwier,
K. Shimada,
M. Richter,
A. Isaeva,
F. Reinert
Abstract:
Using angle-resolved photoelectron spectroscopy (ARPES), we investigate the surface electronic structure of the magnetic van der Waals compounds MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$, the $n=$~1 and 2 members of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series, which have attracted recent interest as intrinsic magnetic topological insulators. Combining circular dichroic, spin-resolved and photon…
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Using angle-resolved photoelectron spectroscopy (ARPES), we investigate the surface electronic structure of the magnetic van der Waals compounds MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$, the $n=$~1 and 2 members of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series, which have attracted recent interest as intrinsic magnetic topological insulators. Combining circular dichroic, spin-resolved and photon-energy-dependent ARPES measurements with calculations based on density functional theory, we unveil complex momentum-dependent orbital and spin textures in the surface electronic structure and disentangle topological from trivial surface bands. We find that the Dirac-cone dispersion of the topologial surface state is strongly perturbed by hybridization with valence-band states for Bi$_2$Te$_3$-terminated surfaces but remains preserved for MnBi$_2$Te$_4$-terminated surfaces. Our results firmly establish the topologically non-trivial nature of these magnetic van der Waals materials and indicate that the possibility of realizing a quantized anomalous Hall conductivity depends on surface termination.
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Submitted 7 May, 2021; v1 submitted 15 July, 2020;
originally announced July 2020.
