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Highly Efficient Bilateral Doping of Single-Walled Carbon Nanotubes
Authors:
Anastasia E. Goldt,
Orysia T. Zaremba,
Mikhail O. Bulavskiy,
Fedor S. Fedorov,
Konstantin V. Larionov,
Alexey P. Tsapenko,
Zakhar I. Popov,
Pavel Sorokin,
Anton S. Anisimov,
Heena Inani,
Jani Kotakoski,
Kimmo Mustonen,
Albert G. Nasibulin
Abstract:
A boost in the development of flexible and wearable electronics facilitates the design of new materials to be applied as transparent conducting films (TCFs). Although single-walled carbon nanotube (SWCNT) films are the most promising candidates for flexible TCFs, they still do not meet optoelectronic requirements demanded their successful industrial integration. In this study, we proposed and thor…
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A boost in the development of flexible and wearable electronics facilitates the design of new materials to be applied as transparent conducting films (TCFs). Although single-walled carbon nanotube (SWCNT) films are the most promising candidates for flexible TCFs, they still do not meet optoelectronic requirements demanded their successful industrial integration. In this study, we proposed and thoroughly investigated a new approach that comprises simultaneous bilateral (outer and inner surfaces) SWCNT doping after their opening by thermal treatment at 400 C under an ambient air atmosphere. Doping by a chloroauric acid (HAuCl$_{4}$) ethanol solution allowed us to achieve the record value of sheet resistance of 31 $\pm$ 4 $Ω$/sq at a transmittance of 90% in the middle of visible spectra (550 nm). The strong p-doping was examined by open-circuit potential (OCP) measurements and confirmed by ab initio calculations demonstrating a downshift of Fermi level around 1 eV for the case of bilateral doping.
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Submitted 1 April, 2021;
originally announced April 2021.
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Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes
Authors:
Kimmo Mustonen,
Alexander Markevich,
Mukesh Tripathi,
Heena Inani,
Er-Xiong Ding,
Aqeel Hussain,
Clemens Mangler,
Esko I. Kauppinen,
Jani Kotakoski,
Toma Susi
Abstract:
The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and microscope stability, but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical m…
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The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and microscope stability, but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical means. Here it is shown that silicon heteroatoms introduced via plasma irradiation into the lattice of single-walled carbon nanotubes (SWCNTs) can be manipulated using a focused 55-60 keV electron probe aimed at neighboring carbon sites. Moving the silicon atom mainly along the longitudinal axis of large 2.7 nm diameter tubes, more than 90 controlled lattice jumps were recorded and the relevant displacement cross sections estimated. Molecular dynamics simulations show that even in 2 nm SWCNTs the threshold energies for out-of-plane dynamics are different than in graphene, and depend on the orientation of the silicon-carbon bond with respect to the electron beam as well as the local bonding of the displaced carbon atom and its neighbors. Atomic-level engineering of SWCNTs where the electron wave functions are more strictly confined than in two-dimensional materials may enable the fabrication of tunable electronic resonators and other devices.
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Submitted 11 February, 2019;
originally announced February 2019.
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Si Substitution in Nanotubes and Graphene via Intermittent Vacancies
Authors:
Heena Inani,
Kimmo Mustonen,
Alexander Markevich,
Er-Xiong Ding,
Mukesh Tripathi,
Aqeel Hussain,
Clemens Mangler,
Esko I. Kauppinen,
Toma Susi,
Jani Kotakoski
Abstract:
The properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, that often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activat…
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The properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, that often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activation of adatom diffusion by laser irradiation, silicon impurities are incorporated into the lattice of both materials. After an exposure of $\sim$1 ion/nm$^{2}$, we find Si substitution densities of 0.15 nm$^{-2}$ in graphene and 0.05 nm$^{-2}$ in nanotubes, as revealed by atomically resolved scanning transmission electron microscopy. In good agreement with predictions of Ar irradiation effects in SWCNTs, we find Si incorporated in both mono- and divacancies, with $\sim$2/3 being of the first type. Controlled inclusion of impurities in the quasi-1D and 2D carbon lattices may prove useful for applications such as gas sensing, and a similar approach might also be used to substitute other elements with migration barriers lower than that of carbon.
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Submitted 7 February, 2019;
originally announced February 2019.
