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Ultrathin film of 3D topological insulators by vapor-phase epitaxy: Surface dominant transport in wide temperature revealed by Seebeck measurement
Authors:
Stephane Yu Matsushita,
Khuong Kim Huynh,
Katsumi Tanigaki
Abstract:
Realization of intrinsic surface dominant transport in a wide temperature region for a topological insulators (TIs) is an important frontier research in order to promote the progresses of TIs towards the future electronics. We report here systematic measurements of longitudinal electrical transport, Shubnikov-de-Haas (SdH) quantum oscillations, Hall coefficient (R_H^2D), and Seebeck coefficient as…
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Realization of intrinsic surface dominant transport in a wide temperature region for a topological insulators (TIs) is an important frontier research in order to promote the progresses of TIs towards the future electronics. We report here systematic measurements of longitudinal electrical transport, Shubnikov-de-Haas (SdH) quantum oscillations, Hall coefficient (R_H^2D), and Seebeck coefficient as a function of film thickness (d) and temperature using high quality Bi2-xSbxTe3-ySey (BSTS) single crystal thin films grown by physical vapor-phase deposition. The thickness dependence of sheet conductance and Seebeck coefficient clearly show the suppression of semiconducting hole carriers of bulk states by reducing film thickness, reaching to the surface dominant transport at below dc=14 nm. Quantitative arguments are made as to how the contribution of itinerant carrier number (n) can be suppressed, using both R_H^2D (n_Hall^2D) and SdH (n_SdH). Intriguingly, the value of n_Hall^2D approaches to be twice of n_SdH below dc. While R_H^2D shows a negative sign in whole temperature region, a change from negative to positive polarity is clearly observed for S at high temperatures when d is thick. We point out that this inconsistency observed between R_H^2D and S is intrinsic in 3D-TIs and its origin is the large difference in carrier mobility between the bulk and the topological surface. We propose that Seebeck coefficient can become a convenient and powerful tool to evaluate the intrinsic carrier concentration for the topological surface in 3D-TIs even in the absence of magnetic field.
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Submitted 20 December, 2018;
originally announced December 2018.
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Thermoelectric properties of 3D topological insulator: Direct observation of topological surface and its gap opened states
Authors:
Stephane Yu Matsushita,
Khuong Kim Huynh,
Harukazu Yoshino,
Ngoc Han Tu,
Yoichi Tanabe,
Katsumi Tanigaki
Abstract:
We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films epitaxially grown in the ultrathin limit. Two intrinsic nontrivial topological surface states, a metallic TSDS (m-TSDS) and a gap-opened semiconducting topological st…
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We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films epitaxially grown in the ultrathin limit. Two intrinsic nontrivial topological surface states, a metallic TSDS (m-TSDS) and a gap-opened semiconducting topological state (g-TSDS), are successfully observed by electrical transport, and important TE parameters (electrical conductivity ($σ$), thermal conductivity ($κ$), and thermopower ($S$)) are accurately determined. Pure m-TSDS gives $S$=-44 μVK$^{-1}$, which is an order of magnitude higher than those of the conventional metals and the value is enhanced to -212 μVK$^{-1}$ for g-TSDS. It is clearly shown that the semi-classical Boltzmann transport equation (SBTE) in the framework of constant relaxation time ($τ$) most frequently used for conventional analysis cannot be valid in 3D-TIs and strong energy dependent relaxation time $τ(E)$ beyond the Born approximation is essential for making intrinsic interpretations. Although $σ$ is protected on the m-TSDS, $κ$ is greatly influenced by the disorder on the topological surface, giving a dissimilar effect between topologically protected electronic conduction and phonon transport.
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Submitted 30 March, 2017;
originally announced March 2017.
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Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks
Authors:
Yoichi Tanabe,
Yoshikazu Ito,
Katsuaki Sugawara,
Daisuke Hojo,
Mikito Koshino,
Takeshi Fujita,
Tsutomu Aida,
Xiandong Xu,
Khuong Kim Huynh,
Hidekazu Shimotani,
Tadafumi Adschiri,
Takashi Takahashi,
Katsumi Tanigaki,
Hideo Aoki,
Mingwei Chen
Abstract:
Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of m…
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Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of massless Dirac fermions cannot be well preserved in these materials for transistor applications. Here we report a high-performance graphene transistor by utilizing 3D nanoporous graphene which is comprised of an interconnected single graphene sheet and a commodious open porosity to infuse an ionic liquid for a tunable electronic state by applying electric fields. The 3D nanoporous graphene transistor, with high carrier mobility of 5000-7500 cm$^2$V$^{-1}$s$^{-1}$, exhibits two to three orders of magnitude higher electric conductance and capacitance than those of 2D graphene devices, along with preserved ambipolor electronic nature of Dirac cones. Moreover, the 3D graphene networks with Dirac fermions turn out to exhibit a unique nonlinear Hall resistance in a wide range of the gate voltages. The high quality 3D nanoporous graphene EDLT may open a new field for utilizing Dirac fermions in 3D network structures for various fundamental and practical applications.
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Submitted 17 December, 2016;
originally announced December 2016.
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Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$
Authors:
Takahiro Urata,
Yoichi Tanabe,
Khuong Kim Huynh,
Hidetoshi Oguro,
Kazuo Watanabe,
Katsumi Tanigaki
Abstract:
Temperature dependence of resistivity of single crystals of Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$ is studied in detail under zero and high magnetic field (magnetoresistance), the latter of which enables to monitor the temperature ($T$) evolution of resistivity below the onset of superconducting transition temperature ($T_{\rm c}$). In FeSe$_{1-y}$S$_y$, $T$-linear dependence of resistivity is p…
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Temperature dependence of resistivity of single crystals of Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$ is studied in detail under zero and high magnetic field (magnetoresistance), the latter of which enables to monitor the temperature ($T$) evolution of resistivity below the onset of superconducting transition temperature ($T_{\rm c}$). In FeSe$_{1-y}$S$_y$, $T$-linear dependence of resistivity is prominent in $y$ = 0.160 below 40 K, whereas it changes to a Fermi-liquid(FL)-like $T^2$ one below 10 K in $y$ = 0.212. These suggest that the quantum critical point (QCP) originating from the electronic nematicity resides around $y$ = 0.160 and the fluctuation in QCP gives rise anomalous $T$-linear dependence in resistivity in a wide $T$ range. In Fe$_{1-x}$Co$_x$Se, resistivity gradually changes from linear- to quadratic- $T$-dependent one at low temperatures in the range between $x$ = 0.036 and 0.075. These could be interpreted by scenarios of both the nematic QCP and the crossover in the ground states between the orthorhombic nematic phase and the tetragonal phase. The anomalies found as $T$-linear resistivity are discussed in terms of orbital and spin fluctuation arising from the nematic QCP.
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Submitted 2 August, 2016;
originally announced August 2016.
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In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$
Authors:
Ngoc Han Tu,
Yoichi Tanabe,
Yosuke Satake,
Khuong Kim Huynh,
Katsumi Tanigaki
Abstract:
A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac su…
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A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of BSTS on its top half by employing tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.
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Submitted 17 December, 2016; v1 submitted 24 March, 2016;
originally announced March 2016.
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Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi2-xSbxTe3-ySey Ultrathin Film by Catalyst-Free Physical Vapor Deposition
Authors:
Ngoc Han Tu,
Yoichi Tanabe,
Yosuke Satake,
Khuong Kim Huynh,
Le Huu Phuoc,
Stephane Yu Matsushita,
Katsumi Tanigaki
Abstract:
Uniform and large area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth of bulk insulating three dimensional topological insulator (3D-TI) Bi2-xSbxTe3-ySey (BSTS) ultrathin films, ranging from a few quintuple to several hundreds of…
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Uniform and large area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth of bulk insulating three dimensional topological insulator (3D-TI) Bi2-xSbxTe3-ySey (BSTS) ultrathin films, ranging from a few quintuple to several hundreds of layaers, on mica in a large-area (1 cm2) via catalyst free physical vapor deposition. These films can nondestructively be exfoliated using deionized water and transferred to various kinds of substrates as desired. The transferred BSTS thin films show good ambipolar characteristics as well as well defined quantum oscillations arising from the topological surface states. Carrier mobility of 2500-5100 cm2(Vs)-1 is comparable to the high quality bulk BSTS single crystal. Moreover, tunable electronic states from the massless to the massive Dirac fermion were observed with a decrease in the film thickness. Both the feasible large area synthesis and the reliable film transfer process can promise that BSTS ultrathin films will pave a route to many applications of 3D-TIs.
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Submitted 13 April, 2017; v1 submitted 25 January, 2016;
originally announced January 2016.
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Argument on superconductivity pairing mechanism from cobalt impurity doping in FeSe: spin ($s_{\pm}$) or orbital ($s_{++}$) fluctuation
Authors:
T. Urata,
Y. Tanabe,
K. K. Huynh,
Y. Yamakawa,
H. Kontani,
K. Tanigaki
Abstract:
In high-superconducting transition temperature ($T_{\rm c}$) iron-based superconductors, interband sign reversal ($s_{\rm \pm}$) and sign preserving ($s_{\rm ++}$) $s$-wave superconducting states have been primarily discussed as the plausible superconducting mechanism. We study Co impurity scattering effects on the superconductivity in order to achieve an important clue on the pairing mechanism us…
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In high-superconducting transition temperature ($T_{\rm c}$) iron-based superconductors, interband sign reversal ($s_{\rm \pm}$) and sign preserving ($s_{\rm ++}$) $s$-wave superconducting states have been primarily discussed as the plausible superconducting mechanism. We study Co impurity scattering effects on the superconductivity in order to achieve an important clue on the pairing mechanism using single crystal Fe$_{1-x}$Co$_x$Se and depict a phase diagram of a FeSe system. Both superconductivity and structural transition / orbital order are suppressed by the Co replacement on the Fe sites and disappear above $x$ = 0.036. These correlated suppressions represent a common background physics behind these physical phenomena in the multiband Fermi surfaces of FeSe. By comparing experimental data and theories so far proposed, the suppression of $T_{\rm c}$ against the residual resistivity is shown to be much weaker than that predicted in the case of a general sign reversal and a full gap $s_{\pm}$ models. The origin of the superconducting paring in FeSe is discussed in terms of its multiband electronic structure.
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Submitted 9 November, 2015; v1 submitted 19 August, 2015;
originally announced August 2015.
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Enhanced superconducting transition temperature in hyper-interlayer-expanded FeSe despite the suppressed electronic nematic order and spin fluctuations
Authors:
M. Majcen Hrovat,
P. Jeglic,
M. Klanjsek,
T. Hatakeda,
T. Noji,
Y. Tanabe,
T. Urata,
K. K. Huynh,
Y. Koike,
K. Tanigaki,
D. Arcon
Abstract:
The superconducting critical temperature, $T_{\rm c}$, of FeSe can be dramatically enhanced by intercalation of a molecular spacer layer. Here we report on a $^{77}$Se, $^7$Li and $^1$H nuclear magnetic resonance (NMR) study of the powdered hyper-interlayer-expanded Li$_{x}($C$_2$H$_8$N$_2$)$_y$Fe$_{2-z}$Se$_2$ with a nearly optimal $T_{\rm c}=45$~K. The absence of any shift in the $^7$Li and…
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The superconducting critical temperature, $T_{\rm c}$, of FeSe can be dramatically enhanced by intercalation of a molecular spacer layer. Here we report on a $^{77}$Se, $^7$Li and $^1$H nuclear magnetic resonance (NMR) study of the powdered hyper-interlayer-expanded Li$_{x}($C$_2$H$_8$N$_2$)$_y$Fe$_{2-z}$Se$_2$ with a nearly optimal $T_{\rm c}=45$~K. The absence of any shift in the $^7$Li and $^1$H NMR spectra indicates a complete decoupling of interlayer units from the conduction electrons in FeSe layers, whereas nearly temperature-independent $^7$Li and $^1$H spin-lattice relaxation rates are consistent with the non-negligible concentration of Fe impurities present in the insulating interlayer space. On the other hand, strong temperature dependence of $^{77}$Se NMR shift and spin-lattice relaxation rate, $1/^{77}T_1$, is attributed to the hole-like bands close to the Fermi energy. $1/^{77}T_1$ shows no additional anisotropy that would account for the onset of electronic nematic order down to $T_{\rm c}$. Similarly, no enhancement in $1/^{77}T_1$ due to the spin fluctuations could be found in the normal state. Yet, a characteristic power-law dependence $1/^{77}T_1\propto T^{4.5}$ still comply with the Cooper pairing mediated by spin fluctuations.
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Submitted 7 August, 2015;
originally announced August 2015.
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Emergence of the minority hole with high mobility on the electrical transport in the Fe-pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$
Authors:
T. Urata,
Y. Tanabe,
K. K. Huynh,
S. Heguri,
H. Oguro,
K. Watanabe,
K. Tanigaki
Abstract:
In Fe pnictide (Pn) superconducting materials, neither Mn- nor Cr- doping to the Fe site induces superconductivity, even though hole carriers are generated. This is in strong contrast with the superconductivity appearing when holes are introduced by alkali metal substitution on the insulating blocking layers. We investigate in detail the effects of Mn doping on magneto-transport properties in Ba(F…
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In Fe pnictide (Pn) superconducting materials, neither Mn- nor Cr- doping to the Fe site induces superconductivity, even though hole carriers are generated. This is in strong contrast with the superconductivity appearing when holes are introduced by alkali metal substitution on the insulating blocking layers. We investigate in detail the effects of Mn doping on magneto-transport properties in Ba(Fe$_{1-x}$Mn$_x$As)$_2$ for elucidating the intrinsic reason. The negative Hall coefficient for $x$ = 0 estimated in the low magnetic field ($B$) regime gradually increases as $x$ increases, and its sign changes to a positive one at $x$ = 0.020. Hall resistivities as well as simultaneous interpretation using the magnetoconductivity tensor including both longitudinal and transverse transport components clarify that minority holes with high mobility are generated by the Mn doping via spin density wave (SDW) transition at low temperatures, while original majority electrons and holes residing in the parabolic-like Fermi surfaces (FSs) of the semimetallic Ba(FeAs)$_2$ are negligibly affected. Present results indicate that the mechanism of hole doping in Ba(Fe$_{1-x}$Mn$_x$As)$_2$ is greatly different from that of the other superconducting FePns family.
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Submitted 12 May, 2015; v1 submitted 10 February, 2015;
originally announced February 2015.
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Van der Waals epitaxial growth of topological insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica
Authors:
Ngoc Han Tu,
Yoichi Tanabe,
Khuong Kim Huynh,
Yohei Sato,
Hidetoshi Oguro,
Satoshi Heguri,
Kenji Tsuda,
Masami Terauchi,
Kazuo Watanabe,
Katsumi Tanigaki
Abstract:
We report the growth of high quality Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size and the composition of BSTS-NPs. Raman spectra showing systematic change indicate that the thickness…
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We report the growth of high quality Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size and the composition of BSTS-NPs. Raman spectra showing systematic change indicate that the thicknesses and compositions of BSTS-NPs are indeed accurately controlled. Electrical transport demonstrates that a robust Dirac cone carrier transport in BSTS-NPs. Since BSTS-NPs provide superior dominant surface transport of the tunable Dirac cone surface states with negligible contribution of the conduction of the bulk states, BSTS-NPs provide an ideal platform to explore intrinsic physical phenomena as well as technological applications of 3-dimensional topological insulators in the future.
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Submitted 29 July, 2014;
originally announced July 2014.
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Electric Transport of a Single Crystal Iron Chalcogenide FeSe Superconductor: Evidence of Symmetry Breakdown Nematicity and Additional Ultrafast Dirac cone-Like Carriers
Authors:
K. K. Huynh,
Y. Tanabe,
T. Urata,
H. Oguro,
S. Heguri,
K. Watanabe,
K. Tanigaki
Abstract:
An SDW antiferromagnetic (SDW-AF) low temperature phase transition is generally observe and the AF spin fluctuations are considered to play an important role for the superconductivity paring mechanism in FeAs superconductors. However, a similar magnetic phase transition is not observed in FeSe superconductors, which has caused considerable discussion. We report on the intrinsic electronic states o…
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An SDW antiferromagnetic (SDW-AF) low temperature phase transition is generally observe and the AF spin fluctuations are considered to play an important role for the superconductivity paring mechanism in FeAs superconductors. However, a similar magnetic phase transition is not observed in FeSe superconductors, which has caused considerable discussion. We report on the intrinsic electronic states of FeSe as elucidated by transport measurements under magnetic fields using a high quality single crystal. A mobility spectrum analysis, an ab initio method that does not make assumptions on the transport parameters in a multicarrier system, provides very import and clear evidence that another hidden order, most likely the symmetry broken from the tetragonal C4 symmetry to the C2 symmetry nematicity associated with the selective d-orbital splitting, exists in the case of superconducting FeSe other than the AF magnetic order spin fluctuations. The intrinsic low temperature phase in FeSe is in the almost compensated semimetallic states but is additionally accompanied by Dirac cone like ultrafast electrons $\sim$ 10$^4$cm$^2$(VS)$^{-1}$ as minority carriers.
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Submitted 4 October, 2014; v1 submitted 15 May, 2014;
originally announced May 2014.
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Mobility spectrum analytical approach for intrinsic band picture of Ba(FeAs)$_2$
Authors:
Khuong Kim Huynh,
Yoichi Tanabe,
Takahiko Urata,
Satoshi Heguri,
Katsumi Tanigaki,
T. Kida,
M. Hagiwara
Abstract:
Unconventional high temperature superconductivity as well as three-dimensional bulk Dirac cone quantum states arising from the unique d-orbital topology has been a recent priority research area in physics. In iron pnictide compounds, although transport phenomena arisen from this multiple band Fermi surface are intriguing and scientifically important, they still do not give an adequate matching to…
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Unconventional high temperature superconductivity as well as three-dimensional bulk Dirac cone quantum states arising from the unique d-orbital topology has been a recent priority research area in physics. In iron pnictide compounds, although transport phenomena arisen from this multiple band Fermi surface are intriguing and scientifically important, they still do not give an adequate matching to neither experimental observations on the band picture nor theoretical calculations and a debate continues. Here we describe a new analytical approach of mobility spectrum, in which the carrier number is conveniently described as a function of mobility without any hypothesis about the number of carriers, on both longitudinal and transverse transport of high quality single crystal Ba(FeAs)$_2$ in a wide range of magnetic field. We show that the major numbers of carriers reside in large parabolic hole and electron pockets with very different topology as well as remarkably different mobility spectra, while the minor number of Dirac carriers resides in both hole- and electron- Dirac quantum states with the largest mobility as high as 70,000 cm$^2$(Vs)$^{-1}$.
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Submitted 28 March, 2014; v1 submitted 27 March, 2014;
originally announced March 2014.
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Electron and Hole Injection via Charge Transfer at the Topological-Insulator $Bi_{2-x}Sb_xTe_{3-y}Se_y$/Organic-Molecule Interface
Authors:
Yoichi Tanabe,
Khuong Kim Huynh,
Ryo Nouchi,
Satoshi Heguri,
Gang Mu,
Jingtao Xu,
Hidekazu Shimotani,
Katsumi Tanigaki
Abstract:
As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is described. The principle of the carrier tuning and its type conversion of TI's presented in this research are based on the charge transfer of holes or electrons at the…
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As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is described. The principle of the carrier tuning and its type conversion of TI's presented in this research are based on the charge transfer of holes or electrons at the TI/organic molecule interface. By employing 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) as an electron acceptor or tetracyanoquinodimethane (TCNQ) as a donor for n- and p- Bi2-xSbxTe3-ySey (BSTS) single crystals, successful carrier conversion from n to p and its reverse mode is demonstrated depending on the electron affinities of the molecules. The present method provides a nondestructive and efficient method for local tuning in carrier density of TI's, and is useful for future applications.
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Submitted 21 February, 2014;
originally announced February 2014.
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Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$
Authors:
T. Urata,
Y. Tanabe,
K. K. Huynh,
H. Oguro,
K. Watanabe,
S. Heguri,
K. Tanigaki
Abstract:
The effect of Mn substitution, acting as a magnetic impurity for Fe, on the Dirac cone was investigated in Ba(Fe$_{1-x}$Mn$_x$As)$_2$. Both magnetoresistance and Hall resistivity studies clearly indicate that the cyclotron effective mass ($m^{\ast}$) of the Dirac cone is anomalously enhanced at low temperatures by the impurity, although its evolution as a function of carrier number proceeds in a c…
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The effect of Mn substitution, acting as a magnetic impurity for Fe, on the Dirac cone was investigated in Ba(Fe$_{1-x}$Mn$_x$As)$_2$. Both magnetoresistance and Hall resistivity studies clearly indicate that the cyclotron effective mass ($m^{\ast}$) of the Dirac cone is anomalously enhanced at low temperatures by the impurity, although its evolution as a function of carrier number proceeds in a conventional manner at higher temperatures. Kondo-like band renormalization induced by the magnetic impurity scattering is suggested as an explanation for this, and the anomalous mass enhancement of the Dirac fermions is discussed.
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Submitted 14 January, 2014; v1 submitted 10 July, 2013;
originally announced July 2013.
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Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$
Authors:
Y. Tanabe,
K. K. Huynh,
T. Urata,
S. Heguri,
G. Mu,
J. T. Xu,
R. Nouchi,
K. Tanigaki
Abstract:
We report electronic transport of Dirac cones when Fe is replaced by Ru, which has an isoelectronic electron configuration to Fe, using single crystals of Ba(Fe$_{1-x}$Ru$_x$As)$_2$. The electronic transport of parabolic bands is shown to be suppressed by scattering due to the crystal lattice distortion and the impurity effect of Ru, while that of the Dirac cone is not significantly reduced due to…
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We report electronic transport of Dirac cones when Fe is replaced by Ru, which has an isoelectronic electron configuration to Fe, using single crystals of Ba(Fe$_{1-x}$Ru$_x$As)$_2$. The electronic transport of parabolic bands is shown to be suppressed by scattering due to the crystal lattice distortion and the impurity effect of Ru, while that of the Dirac cone is not significantly reduced due to the intrinsic character of Dirac cones. It is clearly shown from magnetoresistance and Hall coefficient measurements that the inverse of average mobility, proportional to cyclotron effective mass, develops as the square root of the carrier number (n) of the Dirac cones. This is the unique character of the Dirac cone linear dispersion relationship. Scattering of Ru on the Dirac cones is discussed in terms of the estimated mean free path using experimental parameters.
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Submitted 1 September, 2012; v1 submitted 11 August, 2012;
originally announced August 2012.
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Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe$_{1-x}$Ru$_x$As)$_2$
Authors:
Y. Tanabe,
K. K. Huynh,
S. Heguri,
G. Mu,
T. Urata,
J. Xu,
R. Nouchi,
N. Mitoma,
K. Tanigaki
Abstract:
The Ru doping effect on the Dirac cone states is investigated in iron pnictide superconductors Ba(Fe$_{1-x}$Ru$_x$As)$_2$ using the transverse magnetoresistance (MR) measurements as a function of temperature. The linear development of MR against magnetic field $B$ is observed for $x$ = 0 - 0.244 at low temperatures below the antiferromagnetic transition. The $B$-linear MR is interpreted in terms o…
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The Ru doping effect on the Dirac cone states is investigated in iron pnictide superconductors Ba(Fe$_{1-x}$Ru$_x$As)$_2$ using the transverse magnetoresistance (MR) measurements as a function of temperature. The linear development of MR against magnetic field $B$ is observed for $x$ = 0 - 0.244 at low temperatures below the antiferromagnetic transition. The $B$-linear MR is interpreted in terms of the quantum limit of the Dirac cone states by using the model proposed by Abrikosov. An intriguing evidence is shown that the Dirac cone state persists on the electronic phase diagram where the antiferromagnetism and the superconductivity coexist.
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Submitted 30 September, 2011; v1 submitted 8 June, 2011;
originally announced June 2011.
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Electron and hole Dirac cone states in-pairs in Ba(FeAs)$_2$ confirmed by magnetoresistance
Authors:
Khuong K. Huynh,
Yoichi Tanabe,
Katsumi Tanigaki
Abstract:
The quantum transport of Dirac cone states in the iron pnictide Ba(FeAs)$_2$ with a d-\,multiband system is studied by using single crystal samples. The transverse magnetoresistance develops linearly against magnetic field at low temperatures. The transport phenomena are interpreted in terms of the 0$^{th}$ Landau level by applying the theory predicted by Abrikosov. The results of the semiclassica…
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The quantum transport of Dirac cone states in the iron pnictide Ba(FeAs)$_2$ with a d-\,multiband system is studied by using single crystal samples. The transverse magnetoresistance develops linearly against magnetic field at low temperatures. The transport phenomena are interpreted in terms of the 0$^{th}$ Landau level by applying the theory predicted by Abrikosov. The results of the semiclassical analyses of a two carrier system under low magnetic field limit show that both electron and hole reside as the high mobility states, being indicative to the fact that both electron- and hole Dirac cone states should be taken into account in pairs for having the real interpretation of low temperature electronic states in iron pnictides, being in contrast to the previous reports.
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Submitted 21 June, 2011; v1 submitted 14 December, 2010;
originally announced December 2010.
