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Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides
Authors:
Yi-Hsun Chen,
Ping-Yuan Lo,
Kyle W. Boschen,
Guan-Hao Peng,
Chun-Jui Huang,
Luke N. Holtzman,
Chih-En Hsu,
Yung-Ning Hsu,
Madisen Holbrook,
Wei-Hua Wang,
Katayun Barmak,
James Hone,
Pawel Hawrylak,
Hung-Chung Hsueh,
Jeffrey A. Davis,
Shun-Jen Cheng,
Michael S. Fuhrer,
Shao-Yu Chen
Abstract:
In this work, we report a pronounced light upconversion in few-layer transition metal dichalcogenides. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the spontaneous emission of upconverted bright excitons, which can have a high upconversion efficiency. A…
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In this work, we report a pronounced light upconversion in few-layer transition metal dichalcogenides. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the spontaneous emission of upconverted bright excitons, which can have a high upconversion efficiency. Additionally, the upconversion photoluminescence is generic in MoS2, MoSe2, WS2, and WSe2, showing a high tuneability from green to ultraviolet light.
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Submitted 5 September, 2024;
originally announced September 2024.
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Superconductivity in twisted bilayer WSe$_2$
Authors:
Yinjie Guo,
Jordan Pack,
Joshua Swann,
Luke Holtzman,
Matthew Cothrine,
Kenji Watanabe,
Takashi Taniguchi,
David Mandrus,
Katayun Barmak,
James Hone,
Andrew J. Millis,
Abhay N. Pasupathy,
Cory R. Dean
Abstract:
The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other…
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The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other two-dimensional materials such as transition metal dichalcogenides (TMDs). Although a wide range of correlated phenomenon have indeed been observed in the moiré TMDs, robust demonstration of superconductivity has remained absent. Here we report superconductivity in 5 degree twisted bilayer WSe$_2$ (tWSe$_2$) with a maximum critical temperature of 426 mK. The superconducting state appears in a limited region of displacement field and density that is adjacent to a metallic state with Fermi surface reconstruction believed to arise from antiferromagnetic order. A sharp boundary is observed between the superconducting and magnetic phases at low temperature, reminiscent of spin-fluctuation mediated superconductivity. Our results establish that moiré flat-band superconductivity extends beyond graphene structures. Material properties that are absent in graphene but intrinsic among the TMDs such as a native band gap, large spin-orbit coupling, spin-valley locking, and magnetism offer the possibility to access a broader superconducting parameter space than graphene-only structures.
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Submitted 5 June, 2024;
originally announced June 2024.
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Twisted nonlinear optics in monolayer van der Waals crystals
Authors:
Tenzin Norden,
Luis M. Martinez,
Nehan Tarefder,
Kevin W. C. Kwock,
Luke M. McClintock,
Nicholas Olsen,
Luke N. Holtzman,
Xiaoyang Zhu,
James C. Hone,
Jinkyoung Yoo,
Jian-Xin Zhu,
P. James Schuck,
Antoinette J. Taylor,
Rohit P. Prasankumar,
Wilton J. M. Kort-Kamp,
Prashant Padmanabhan
Abstract:
In addition to a plethora of emergent phenomena, the spatial topology of optical vortices enables an array of applications spanning communications to quantum photonics. Nonlinear optics is essential in this context, providing access to an infinitely large set of quantum states associated with the orbital angular momentum of light. Nevertheless, the realization of such processes have failed to keep…
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In addition to a plethora of emergent phenomena, the spatial topology of optical vortices enables an array of applications spanning communications to quantum photonics. Nonlinear optics is essential in this context, providing access to an infinitely large set of quantum states associated with the orbital angular momentum of light. Nevertheless, the realization of such processes have failed to keep pace with the ever-growing need to shrink the fundamental length-scale of photonic technologies to the nanometer regime6. Here, we push the boundaries of vortex nonlinear optics to the ultimate limits of material dimensionality. By exploiting second and third-order frequency-mixing processes in semiconducting monolayers, we demonstrate the independent manipulation of the wavelength, orbital angular momentum, and spatial distribution of vortex light-fields. Due to the atomically-thin nature of the host quantum material, this control spans a broad spectral bandwidth in a highly-integrable platform, unconstrained by the traditional limits of bulk nonlinear optical materials. Our work heralds a new avenue for ultra-compact and scalable hybrid nanotechnologies empowered by twisted nonlinear light-matter interactions in van der Waals quantum nanomaterials.
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Submitted 27 April, 2024; v1 submitted 22 April, 2024;
originally announced April 2024.
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Detecting Atomic Scale Surface Defects in STM of TMDs with Ensemble Deep Learning
Authors:
Darian Smalley,
Stephanie D. Lough,
Luke Holtzman,
Kaikui Xu,
Madisen Holbrook,
Matthew R. Rosenberger,
J. C. Hone,
Katayun Barmak,
Masahiro Ishigami
Abstract:
Atomic-scale defect detection is shown in scanning tunneling microscopy images of single crystal WSe2 using an ensemble of U-Net-like convolutional neural networks. Standard deep learning test metrics indicated good detection performance with an average F1 score of 0.66 and demonstrated ensemble generalization to C-AFM images of WSe2 and STM images of MoSe2. Defect coordinates were automatically e…
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Atomic-scale defect detection is shown in scanning tunneling microscopy images of single crystal WSe2 using an ensemble of U-Net-like convolutional neural networks. Standard deep learning test metrics indicated good detection performance with an average F1 score of 0.66 and demonstrated ensemble generalization to C-AFM images of WSe2 and STM images of MoSe2. Defect coordinates were automatically extracted from defect detections maps showing that STM image analysis enhanced by machine learning can be used to dramatically increase sample characterization throughput.
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Submitted 8 December, 2023;
originally announced December 2023.
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Highly tunable room-temperature plexcitons in monolayer WSe2 /gap-plasmon nanocavities
Authors:
Thomas P. Darlington,
Mahfujur Rahaman,
Kevin W. C. Kwock,
Emanuil Yanev,
Xuehao Wu,
Luke N. Holtzman,
Madisen Holbrook,
Gwangwoo Kim,
Kyung Yeol Ma,
Hyeon Suk Shin,
Andrey Krayev,
Matthew Strasbourg,
Nicholas J. Borys,
D. N. Basov,
Katayun Barmak,
James C. Hone,
Abhay N. Pasupathy,
Deep Jariwala,
P. James Schuck
Abstract:
The advancement of quantum photonic technologies relies on the ability to precisely control the degrees of freedom of optically active states. Here, we realize real-time, room-temperature tunable strong plasmon-exciton coupling in 2D semiconductor monolayers enabled by a general approach that combines strain engineering plus force- and voltage-adjustable plasmonic nanocavities. We show that the ex…
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The advancement of quantum photonic technologies relies on the ability to precisely control the degrees of freedom of optically active states. Here, we realize real-time, room-temperature tunable strong plasmon-exciton coupling in 2D semiconductor monolayers enabled by a general approach that combines strain engineering plus force- and voltage-adjustable plasmonic nanocavities. We show that the exciton energy and nanocavity plasmon resonance can be controllably toggled in concert by applying pressure with a plasmonic nanoprobe, allowing in operando control of detuning and coupling strength, with observed Rabi splittings >100 meV. Leveraging correlated force spectroscopy, nano-photoluminescence (nano-PL) and nano-Raman measurements, augmented with electromagnetic simulations, we identify distinct polariton bands and dark polariton states, and map their evolution as a function of nanogap and strain tuning. Uniquely, the system allows for manipulation of coupling strength over a range of cavity parameters without dramatically altering the detuning. Further, we establish that the tunable strong coupling is robust under multiple pressing cycles and repeated experiments over multiple nanobubbles. Finally, we show that the nanogap size can be directly modulated via an applied DC voltage between the substrate and plasmonic tip, highlighting the inherent nature of the concept as a plexcitonic nano-electro-mechanical system (NEMS). Our work demonstrates the potential to precisely control and tailor plexciton states localized in monolayer (1L) transition metal dichalcogenides (TMDs), paving the way for on-chip polariton-based nanophotonic applications spanning quantum information processing to photochemistry.
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Submitted 4 November, 2023;
originally announced November 2023.
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Charge-transfer Contact to a High-Mobility Monolayer Semiconductor
Authors:
Jordan Pack,
Yinjie Guo,
Ziyu Liu,
Bjarke S. Jessen,
Luke Holtzman,
Song Liu,
Matthew Cothrine,
Kenji Watanabe,
Takashi Taniguchi,
David G. Mandrus,
Katayun Barmak,
James Hone,
Cory R. Dean
Abstract:
Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconducto…
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Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconductors that utilizes a charge-transfer layer to achieve large hole doping in the contact region, and implement this technique to measure magneto-transport properties of high-purity monolayer WSe$_2$. We measure a record-high hole mobility of 80,000 cm$^2$/Vs and access channel carrier densities as low as $1.6\times10^{11}$ cm$^{-2}$, an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurement of correlation-driven quantum phases including observation of a low temperature metal-insulator transition in a density and temperature regime where Wigner crystal formation is expected, and observation of the fractional quantum Hall effect under large magnetic fields. The charge transfer contact scheme paves the way for discovery and manipulation of new quantum phenomena in 2D semiconductors and their heterostructures.
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Submitted 30 October, 2023;
originally announced October 2023.
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Spontaneous Exciton Dissociation in Transition Metal Dichalcogenide Monolayers
Authors:
Taketo Handa,
Madisen A. Holbrook,
Nicholas Olsen,
Luke N. Holtzman,
Lucas Huber,
Hai I. Wang,
Mischa Bonn,
Katayun Barmak,
James C. Hone,
Abhay N. Pasupathy,
X. -Y. Zhu
Abstract:
Since the seminal work on MoS2 monolayers, photoexcitation in atomically-thin transition metal dichalcogenides (TMDCs) has been assumed to result in excitons with large binding energies (~ 200-600 meV). Because the exciton binding energies are order-of-magnitude larger than thermal energy at room temperature, it is puzzling that photocurrent and photovoltage generation have been observed in TMDC-b…
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Since the seminal work on MoS2 monolayers, photoexcitation in atomically-thin transition metal dichalcogenides (TMDCs) has been assumed to result in excitons with large binding energies (~ 200-600 meV). Because the exciton binding energies are order-of-magnitude larger than thermal energy at room temperature, it is puzzling that photocurrent and photovoltage generation have been observed in TMDC-based devices, even in monolayers with applied electric fields far below the threshold for exciton dissociation. Here, we show that the photoexcitation of TMDC monolayers results in a substantial population of free charges. Performing ultrafast terahertz (THz) spectroscopy on large-area, single crystal WS2, WSe2, and MoSe2 monolayers, we find that ~10% of excitons spontaneously dissociate into charge carriers with lifetimes exceeding 0.2 ns. Scanning tunnelling microscopy reveals that photo-carrier generation is intimately related to mid-gap defect states, likely via trap-mediated Auger scattering. Only in state-of-the-art quality monolayers14, with mid-gap trap densities as low as 10^9 cm^-2, does intrinsic exciton physics start to dominate the THz response. Our findings reveal that excitons or excitonic complexes are only the predominant quasiparticles in photo-excited TMDC monolayers at the limit of sufficiently low defect densities.
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Submitted 19 June, 2023;
originally announced June 2023.
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Two-step flux synthesis of ultrapure transition metal dichalcogenides
Authors:
Song Liu,
Yang Liu,
Luke Nemetz Holtzman,
Baichang Li,
Madisen Holbrook,
Jordan Pack,
Takashi Taniguchi,
Kenji Watanabe,
Cory R. Dean,
Abhay Pasupathy,
Katayun Barmak,
Daniel A. Rhodes,
James Hone
Abstract:
Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements…
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Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements of monolayer WSe2 yield room-temperature hole mobility above 840 cm2/Vs and low-temperature disorder-limited mobility above 44,000 cm2/Vs. Electrical transport measurements of graphene-WSe2 heterostructures fabricated from the two-step flux grown WSe2 also show superior performance: higher graphene mobility, lower charged impurity density, and well-resolved integer quantum Hall states.
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Submitted 28 March, 2023;
originally announced March 2023.
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P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
Authors:
Yi-Hsun Chen,
Kaijian Xing,
Song Liu,
Luke Holtzman,
Daniel L. Creedon,
Jeffrey C. McCallum,
Kenji Watanabe,
Takashi Taniguchi,
Katayun Barmak,
James Hone,
Alexander R. Hamilton,
Shao-Yu Chen,
Michael S. Fuhrer
Abstract:
1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathemat…
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1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia
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Submitted 22 June, 2022;
originally announced June 2022.