Showing 1–50 of 74 results for author: Holleitner, A W

Interlayer and moiré excitons in atomically thin double layers: from individual quantum emitters to degenerate ensembles

Authors: Mauro Brotons-Gisbert, Brian D. Gerardot, Alexander W. Holleitner, Ursula Wurstbauer

Abstract: Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to drastically enlarged exciton binding energies, exciting spin-valley properties, elongated lifetimes, and large permanent dipoles. The latter allows modification by e… ▽ More Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to drastically enlarged exciton binding energies, exciting spin-valley properties, elongated lifetimes, and large permanent dipoles. The latter allows modification by electric fields and the study of thermalized bosonic quasiparticles, from the single particle level to interacting degenerate dense ensembles. Additionally, the freedom to combine bilayers of different van der Waals materials without lattice or relative twist angle constraints leads to layer hybridized and moiré excitons which can be widely engineered. This review covers fundamental aspects of IXs including correlation phenomena as well as the consequence of moiré superlattices with a strong focus on TMD homo- and hetero-bilayers. △ Less

Submitted 15 July, 2024; originally announced July 2024.

Comments: Review article

Exciton-phonon-scattering: A competition between bosonic and fermionic nature of bound electron-hole pairs

Authors: Manuel Katzer, Malte Selig, Lukas Sigl, Mirco Troue, Johannes Figueiredo, Jonas Kiemle, Florian Sigger, Ursula Wurstbauer, Alexander W. Holleitner, Andreas Knorr

Abstract: The question of macroscopic occupation and spontaneous emergence of coherence for exciton ensembles has gained renewed attention due to the rise of van der Waals heterostructures made of atomically thin semiconductors. The hosted interlayer excitons exhibit nanosecond lifetimes, long enough to allow for excitonic thermalization in time. Several experimental studies reported signatures of macroscop… ▽ More The question of macroscopic occupation and spontaneous emergence of coherence for exciton ensembles has gained renewed attention due to the rise of van der Waals heterostructures made of atomically thin semiconductors. The hosted interlayer excitons exhibit nanosecond lifetimes, long enough to allow for excitonic thermalization in time. Several experimental studies reported signatures of macroscopic occupation effects at elevated exciton densities. With respect to theory, excitons are composite particles formed by fermionic constituents, and a general theoretical argument for a bosonic thermalization of an exciton gas beyond the linear regime is still missing. Here, we derive an equation for the phonon mediated thermalization at densities above the classical limit, and identify which conditions favor the thermalization of fermionic or bosonic character, respectively. In cases where acoustic, quasielastic phonon scattering dominates the dynamics, our theory suggests that transition metal dichalcogenide (TMDC) excitons might be bosonic enough to show bosonic thermalization behaviour and decreasing dephasing for increasing exciton densities. This can be interpreted as a signature of an emerging coherence in the exciton ground state, and agrees well with the experimentally observed features, such as a decreasing linewidth for increasing densities. △ Less

Submitted 21 March, 2023; originally announced March 2023.

Extended spatial coherence of interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers

Authors: Mirco Troue, Johannes Figueiredo, Lukas Sigl, Christos Paspalides, Manuel Katzer, Takashi Taniguchi, Kenji Watanabe, Malte Selig, Andreas Knorr, Ursula Wurstbauer, Alexander W. Holleitner

Abstract: We report on the spatial coherence of interlayer exciton ensembles as formed in MoSe$_2$/WSe$_2$ heterostructures and characterized by point-inversion Michelson-Morley interferometry. Below 10 K, the measured spatial coherence length of the interlayer excitons reaches values equivalent to the lateral expansion of the exciton ensembles. In this regime, the light emission of the excitons turns out t… ▽ More We report on the spatial coherence of interlayer exciton ensembles as formed in MoSe$_2$/WSe$_2$ heterostructures and characterized by point-inversion Michelson-Morley interferometry. Below 10 K, the measured spatial coherence length of the interlayer excitons reaches values equivalent to the lateral expansion of the exciton ensembles. In this regime, the light emission of the excitons turns out to be homogeneously broadened in energy with a high temporal coherence. At higher temperatures, both the spatial coherence length and the temporal coherence time decrease, most likely because of thermal processes. The presented findings point towards a spatially extended, coherent many-body state of interlayer excitons at low temperature. △ Less

Submitted 20 February, 2023; originally announced February 2023.

Lasing of Moiré Trapped MoSe$_2$/WSe$_2$ Interlayer Excitons Coupled to a Nanocavity

Authors: Chenjiang Qian, Mirco Troue, Johannes Figueiredo, Pedro Soubelet, Viviana Villafañe, Johannes Beierlein, Sebastian Klembt, Andreas V. Stier, Sven Höfling, Alexander W. Holleitner, Jonathan J. Finley

Abstract: We report lasing of moiré trapped interlayer excitons (IXs) by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer into a high-$Q$ ($>10^4$) nanophotonic cavity. We control the cavity-IX detuning using a magnetic field and measure their dipolar coupling strength to be $78 \pm 4\ \mathrm{μeV}$, fully consistent with the 82 $\mathrm{μeV}$ predicted by theory. The emission from the… ▽ More We report lasing of moiré trapped interlayer excitons (IXs) by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer into a high-$Q$ ($>10^4$) nanophotonic cavity. We control the cavity-IX detuning using a magnetic field and measure their dipolar coupling strength to be $78 \pm 4\ \mathrm{μeV}$, fully consistent with the 82 $\mathrm{μeV}$ predicted by theory. The emission from the cavity mode shows clear threshold-like behavior as the transition is tuned into resonance with the cavity. We observe a superlinear power dependence accompanied by a narrowing of the linewidth as the distinct features of lasing. The onset and prominence of these threshold-like behaviors are pronounced at resonance while weak off-resonance. Our results show that a lasing transition can be induced in interacting moiré IXs with macroscopic coherence extending over the length scale of the cavity mode. Such systems raise interesting perspectives for low-power switching and synaptic nanophotonic devices using two-dimensional materials. △ Less

Submitted 28 July, 2024; v1 submitted 14 February, 2023; originally announced February 2023.

Journal ref: Sci. Adv. 10(2), eadk6359 (2024)

Ultra-Sensitive Extinction Measurements of Optically Active Defects in Monolayer MoS$_2$

Authors: Florian Sigger, Ines Amersdorffer, Alexander Hötger, Manuel Nutz, Jonas Kiemle, Takashi Taniguchi, Kenji Watanabe, Michael Förg, Jonathan Noe, Jonathan J. Finley, Alexander Högele, Alexander W. Holleitner, Thomas Hümmer, David Hunger, Christoph Kastl

Abstract: We utilize cavity-enhanced extinction spectroscopy to directly quantify the optical absorption of defects in MoS$_2$ generated by helium ion bombardment. We achieve hyperspectral imaging of specific defect patterns with a detection limit below 0.01% extinction, corresponding to a detectable defect density below $10^{11}$ cm$^{-2}$. The corresponding spectra reveal a broad sub-gap absorption, being… ▽ More We utilize cavity-enhanced extinction spectroscopy to directly quantify the optical absorption of defects in MoS$_2$ generated by helium ion bombardment. We achieve hyperspectral imaging of specific defect patterns with a detection limit below 0.01% extinction, corresponding to a detectable defect density below $10^{11}$ cm$^{-2}$. The corresponding spectra reveal a broad sub-gap absorption, being consistent with theoretical predictions related to sulfur vacancy-bound excitons in MoS$_2$. Our results highlight cavity-enhanced extinction spectroscopy as efficient means for the detection of optical transitions in nanoscale thin films with weak absorption, applicable to a broad range of materials. △ Less

Submitted 20 December, 2022; originally announced December 2022.

Comments: 17 pages main manuscript, 7 pages supporting information

Journal ref: J. Phys. Chem. Lett. 2022, 13, 44, 10291-10296

Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin

Authors: Moritz Fischer, Ali Sajid, Jake Iles-Smith, Alexander Hötger, Denys I. Miakota, Mark. K. Svendsen, Christoph Kastl, Stela Canulescu, Sanshui Xiao, Martijn Wubs, Kristian S. Thygesen, Alexander W. Holleitner, Nicolas Stenger

Abstract: The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the c… ▽ More The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the calculated line shapes with experiments we narrow down the microscopic origin to three carbon-based defects: $\mathrm{C_2C_B}$, $\mathrm{C_2C_N}$, and $\mathrm{V_NC_B}$. The theoretical method developed enables us to calculate so-called photoluminescence excitation (PLE) maps, which show excellent agreement with our experiments. The latter resolves higher-order phonon transitions, thereby confirming both the vibronic structure of the optical transition and the phonon-assisted excitation mechanism with a phonon energy 170 meV. We believe that the presented experiments and polaron-based method accurately describe luminescent centres in hBN and will help to identify their microscopic origin. △ Less

Submitted 3 April, 2023; v1 submitted 19 September, 2022; originally announced September 2022.

Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures

Authors: Florian Sigger, Hendrik Lambers, Nisi Katharina, Julian Klein, Nihit Saigal, Alexander W. Holleitner, Ursula Wurstbauer

Abstract: Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence… ▽ More Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence intensities difficult. Here, we determine the dielectric function for the prototypical MoSe2/WSe2 heterobilayer and their individual layers. Apart from a redshift of 18 meV - 44 meV of the energetically lowest interband transitions, we find that for larger energies the dielectric function can only be described by treating the van der Waals heterobilayer as a new artificial homobilayer crystal rather than a stack of individual layers. The determined dielectric functions are applied to calculate the Michelson contrast of the individual layers and the bilayer in dependence of the oxide thickness of often used Si/SiO2 substrates. Our results highlight the need to consider the altered dielectric functions impacting the Michelson interference in the interpretation of intensities in optical measurements such as Raman scattering or photoluminescence. △ Less

Submitted 11 July, 2022; originally announced July 2022.

Comments: 6 pages, 4 figures

Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$

Authors: Alexander Hötger, Tomer Amit, Julian Klein, Katja Barthelmi, Thomas Pelini, Alex Delhomme, Sergio Rey, Marek Potemski, Clément Faugeras, Galit Cohen, Daniel Hernangómez-Pérez, Takashi Taniguchi, Kenji Watanabe, Christoph Kastl, Jonathan J. Finley, Sivan Refaely-Abramson, Alexander W. Holleitner, Andreas V. Stier

Abstract: Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer $\text{MoS}_2$. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a cons… ▽ More Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer $\text{MoS}_2$. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of $\sim$ 3.5 nm. The distinct valley-Zeeman splitting in out-of-plane $B$-fields and the brightening of dark states through in-plane $B$-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies. △ Less

Submitted 17 March, 2023; v1 submitted 20 May, 2022; originally announced May 2022.

Journal ref: npj 2D Mater. Appl. 7, 30 (2023)

Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission

Authors: Chenjiang Qian, Viviana Villafañe, Martin Schalk, G. V. Astakhov, Ulrich Kentsch, Manfred Helm, Pedro Soubelet, Nathan P. Wilson, Roberto Rizzato, Stephan Mohr, Alexander W. Holleitner, Dominik B. Bucher, Andreas V. Stier, JonathanJ. Finley

Abstract: Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q n… ▽ More Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to $V_B^-$. Our observations are consistent with the spatial redistribution of $V_B^-$ emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using $V_B^-$ as cavity spin-photon interfaces. △ Less

Submitted 22 June, 2022; v1 submitted 22 February, 2022; originally announced February 2022.

Journal ref: Nano Lett. 22(13), 5137-5142 (2022)

Optical dipole orientation of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks

Authors: Lukas Sigl, Mirco Troue, Manuel Katzer, Malte Selig, Florian Sigger, Jonas Kiemle, Mauro Brotons-Gisbert, Kenji Watanabe, Takashi Taniguchi, Brian D. Gerardot, Andreas Knorr, Ursula Wurstbauer, Alexander W. Holleitner

Abstract: We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out… ▽ More We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out-of-plane transition dipole moments associated to the interlayer exciton photon emission. We determine the transition dipole moments for all observed interlayer exciton transitions to be (99 $\pm$ 1)% in-plane for R- and H-type stacking, independent of the excitation power and therefore the density of the exciton ensemble in the experimentally examined range. Finally, we discuss the limitations of the presented measurement technique to observe correlation effects in exciton ensembles. △ Less

Submitted 2 November, 2021; originally announced November 2021.

Trions in MoS$_2$ are quantum superpositions of intra- and intervalley spin states

Authors: Julian Klein, Matthias Florian, Alexander Hötger, Alexander Steinhoff, Alex Delhomme, Takashi Taniguchi, Kenji Watanabe, Frank Jahnke, Alexander W. Holleitner, Marek Potemski, Clément Faugeras, Andreas V. Stier, Jonathan J. Finley

Abstract: We report magneto-photoluminescence spectroscopy of gated MoS$_2$ monolayers in high magnetic fields to 28 T. At B = 0T and electron density $n_s\sim 10^{12}cm^-2$, we observe three trion resonances that cannot be explained within a single-particle picture. Employing ab initio calculations that take into account three-particle correlation effects as well as local and non-local electron-hole exchan… ▽ More We report magneto-photoluminescence spectroscopy of gated MoS$_2$ monolayers in high magnetic fields to 28 T. At B = 0T and electron density $n_s\sim 10^{12}cm^-2$, we observe three trion resonances that cannot be explained within a single-particle picture. Employing ab initio calculations that take into account three-particle correlation effects as well as local and non-local electron-hole exchange interaction, we identify those features as quantum superpositions of inter- and intravalley spin states. We experimentally investigate the mixed character of the trion wave function via the filling factor dependent valley Zeeman shift in positive and negative magnetic fields. Our results highlight the importance of exchange interactions for exciton physics in monolayer MoS$_2$ and provide new insights into the microscopic understanding of trion physics in 2D multi-valley semiconductors for low excess carrier densities. △ Less

Submitted 13 September, 2021; originally announced September 2021.

Comments: Main manuscript: 7 pages, 3 figures ; Supplemental material: 16 pages, 4 figures

Journal ref: Phys. Rev. B 105, L041302 (2022)

Nonlocal Exciton-Photon Interactions in Hybrid High-Q Beam Nanocavities with Encapsulated MoS$_2$ Monolayers

Authors: Chenjiang Qian, Viviana Villafañe, Pedro Soubelet, Alexander Hötger, Takashi Taniguchi, Kenji Watanabe, Nathan P. Wilson, Andreas V. Stier, Alexander W. Holleitner, Jonathan J. Finley

Abstract: Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of \textit{free} trions in pristine hBN/MoS$_2$/hBN heterostructures coupled to single mode (Q $>10^4$) quasi 0D nanocavities. The high excitonic and photonic quality of th… ▽ More Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of \textit{free} trions in pristine hBN/MoS$_2$/hBN heterostructures coupled to single mode (Q $>10^4$) quasi 0D nanocavities. The high excitonic and photonic quality of the interaction system stems from our integrated nanofabrication approach simultaneously with the hBN encapsulation and the maximized local cavity field amplitude within the MoS$_2$ monolayer. We observe a nonmonotonic temperature dependence of the cavity-trion interaction strength, consistent with the nonlocal light-matter interactions in which the extent of the center-of-mass wavefunction is comparable to the cavity mode volume in space. Our approach can be generalized to other optically active 2D materials, opening the way towards harnessing novel light-matter interaction regimes for applications in quantum photonics. △ Less

Submitted 25 December, 2022; v1 submitted 9 July, 2021; originally announced July 2021.

Journal ref: Phys. Rev. Lett. 128(23), 237403 (2022)

Ultrafast hot carrier relaxation in silicon monitored by phase-resolved transient absorption spectroscopy

Authors: Martin Wörle, Alexander W. Holleitner, Reinhard Kienberger, Hristo Iglev

Abstract: The relaxation dynamics of hot carriers in silicon (100) is studied via a novel holistic approach based on phase-resolved transient absorption spectroscopy with few-cycle optical pulses. After excitation by a sub-5 fs light pulse, strong electron-phonon coupling leads to an ultrafast momentum relaxation with time constant of 10 fs. The thermalization of the hot carriers occurs on a time constant o… ▽ More The relaxation dynamics of hot carriers in silicon (100) is studied via a novel holistic approach based on phase-resolved transient absorption spectroscopy with few-cycle optical pulses. After excitation by a sub-5 fs light pulse, strong electron-phonon coupling leads to an ultrafast momentum relaxation with time constant of 10 fs. The thermalization of the hot carriers occurs on a time constant of 150 fs, visible in the temporal evolution of the collision time as extracted from the Drude model. We find an increase of the collision time from 3 fs for the shortest timescales with a saturation at approximately 18 fs. Moreover, the optical effective mass of the hot carrier ensemble evolves on ultrafast timescales as well, with a bi-exponential decrease from 0.7 $m_e$ to about 0.125 $m_e$ and time constants of 4 fs and 58 fs. The presented information on the electron mass dynamics as well as the momentum-, energy-, and collision-scattering times with unprecedented time resolution is important for all hot carrier optoelectronic devices. △ Less

Submitted 5 January, 2021; originally announced January 2021.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 104, 041201 (2021)

Achieving a quantum smart workforce

Authors: Clarice D. Aiello, D. D. Awschalom, Hannes Bernien, Tina Brower-Thomas, Kenneth R. Brown, Todd A. Brun, Justin R. Caram, Eric Chitambar, Rosa Di Felice, Michael F. J. Fox, Stephan Haas, Alexander W. Holleitner, Eric R. Hudson, Jeffrey H. Hunt, Robert Joynt, Scott Koziol, H. J. Lewandowski, Douglas T. McClure, Jens Palsberg, Gina Passante, Kristen L. Pudenz, Christopher J. K. Richardson, Jessica L. Rosenberg, R. S. Ross, Mark Saffman , et al. (7 additional authors not shown)

Abstract: Interest in building dedicated Quantum Information Science and Engineering (QISE) education programs has greatly expanded in recent years. These programs are inherently convergent, complex, often resource intensive and likely require collaboration with a broad variety of stakeholders. In order to address this combination of challenges, we have captured ideas from many members in the community. Thi… ▽ More Interest in building dedicated Quantum Information Science and Engineering (QISE) education programs has greatly expanded in recent years. These programs are inherently convergent, complex, often resource intensive and likely require collaboration with a broad variety of stakeholders. In order to address this combination of challenges, we have captured ideas from many members in the community. This manuscript not only addresses policy makers and funding agencies (both public and private and from the regional to the international level) but also contains needs identified by industry leaders and discusses the difficulties inherent in creating an inclusive QISE curriculum. We report on the status of eighteen post-secondary education programs in QISE and provide guidance for building new programs. Lastly, we encourage the development of a comprehensive strategic plan for quantum education and workforce development as a means to make the most of the ongoing substantial investments being made in QISE. △ Less

Submitted 23 October, 2020; originally announced October 2020.

Comments: 18 pages, 2 figures, 1 table

Journal ref: Quantum Sci. Technol. 6 030501 (2021)

Controlling exciton many-body states by the electric-field effect in monolayer MoS$_2$

Authors: Julian Klein, Alexander Hötger, Matthias Florian, Alexander Steinhoff, Alex Delhomme, Takashi Taniguchi, Kenji Watanabe, Frank Jahnke, Alexander W. Holleitner, Marek Potemski, Clément Faugeras, Jonathan J. Finley, Andreas V. Stier

Abstract: We report magneto-optical spectroscopy of gated monolayer MoS$_2$ in high magnetic fields up to 28T and obtain new insights on the many-body interaction of neutral and charged excitons with the resident charges of distinct spin and valley texture. For neutral excitons at low electron doping, we observe a nonlinear valley Zeeman shift due to dipolar spin-interactions that depends sensitively on the… ▽ More We report magneto-optical spectroscopy of gated monolayer MoS$_2$ in high magnetic fields up to 28T and obtain new insights on the many-body interaction of neutral and charged excitons with the resident charges of distinct spin and valley texture. For neutral excitons at low electron doping, we observe a nonlinear valley Zeeman shift due to dipolar spin-interactions that depends sensitively on the local carrier concentration. As the Fermi energy increases to dominate over the other relevant energy scales in the system, the magneto-optical response depends on the occupation of the fully spin-polarized Landau levels in both $K/K^{\prime}$ valleys. This manifests itself in a many-body state. Our experiments demonstrate that the exciton in monolayer semiconductors is only a single particle boson close to charge neutrality. We find that away from charge neutrality it smoothly transitions into polaronic states with a distinct spin-valley flavour that is defined by the Landau level quantized spin and valley texture. △ Less

Submitted 13 September, 2021; v1 submitted 28 July, 2020; originally announced July 2020.

Comments: Main manuscript: 7 pages, 4 figures ; Supplemental material: 20 pages, 8 figures

Journal ref: Phys. Rev. Research 3, 022009 (2021)

Scalable single-photon sources in atomically thin MoS2

Authors: Julian Klein, Lukas Sigl, Samuel Gyger, Katja Barthelmi, Matthias Florian, Sergio Rey, Takashi Taniguchi, Kenji Watanabe, Frank Jahnke, Christoph Kastl, Val Zwiller, Klaus D. Jöns, Kai Müller, Ursula Wurstbauer, Jonathan J. Finley, Alexander W. Holleitner

Abstract: Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D material… ▽ More Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D materials can host point-like centers with inherent confinement to a sub-nm plane. However, previous attempts to truly deterministically control spatial position and spectral homogeneity while maintaining the 2D character have not been realized. Here, we demonstrate the on-demand creation and precise positioning of single-photon sources in atomically thin MoS2 with very narrow ensemble broadening and near-unity fabrication yield. Focused ion beam irradiation creates 100s to 1000s of mono-typical atomistic defects with anti-bunched emission lines with sub-10 nm lateral and 0.7 nm axial positioning accuracy. Our results firmly establish 2D materials as a scalable platform for single-photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 13 pages, 4 figures

Journal ref: ACS Photonics 8, 669-677 (2021)

Condensation signatures of photogenerated interlayer excitons in a van der Waals heterostack

Authors: Lukas Sigl, Florian Sigger, Fabian Kronowetter, Jonas Kiemle, Julian Klein, Kenji Watanabe, Takashi Taniguchi, Jonathan J. Finley, Ursula Wurstbauer, Alexander W. Holleitner

Abstract: Atomistic van der Waals heterostacks are ideal systems for high-temperature exciton condensation because of large exciton binding energies and long lifetimes. Charge transport and electron energy-loss spectroscopy showed first evidence of excitonic many-body states in such two-dimensional materials. Pure optical studies, the most obvious way to access the phase diagram of photogenerated excitons h… ▽ More Atomistic van der Waals heterostacks are ideal systems for high-temperature exciton condensation because of large exciton binding energies and long lifetimes. Charge transport and electron energy-loss spectroscopy showed first evidence of excitonic many-body states in such two-dimensional materials. Pure optical studies, the most obvious way to access the phase diagram of photogenerated excitons have been elusive. We observe several criticalities in photogenerated exciton ensembles hosted in MoSe2-WSe2 heterostacks with respect to photoluminescence intensity, linewidth, and temporal coherence pointing towards the transition to a coherent quantum state. For this state, the occupation is 100 percent and the exciton diffusion length is increased. The phenomena survive above 10 kelvin, consistent with the predicted critical condensation temperature. Our study provides a first phase-diagram of many-body interlayer exciton states including Bose Einstein condensation. △ Less

Submitted 21 January, 2020; originally announced January 2020.

Comments: 26 pages, 16 figures

Journal ref: Phys. Rev. Research 2, 042044 (2020)

Impact of intrinsic and extrinsic imperfections on the electronic and optical properties of MoS2

Authors: J. Klein, A. Kerelsky, M. Lorke, M. Florian, F. Sigger, J. Kiemle, M. C. Reuter, T. Taniguchi, K. Watanabe, J. J. Finley, A. Pasupathy, A. W. Holleitner, F. M. Ross, U. Wurstbauer

Abstract: Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are determined by strong Coulomb interaction. Here, we examine the role of the substrate material and intrinsic defects in monolayer MoS2 crystals on SiO2 and hBN substr… ▽ More Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are determined by strong Coulomb interaction. Here, we examine the role of the substrate material and intrinsic defects in monolayer MoS2 crystals on SiO2 and hBN substrates using a combination of scanning tunneling spectroscopy, scanning tunneling microscopy, optical absorbance, and low-temperature photoluminescence measurements. We find that the different substrates significantly impact the optical properties and the local density of states near the conduction band edge observed in tunneling spectra. While the SiO2 substrates induce a large background doping with electrons and a substantial amount of band tail states near the conduction band edge of MoS2, such states as well as the high doping density are absent using high quality hBN substrates. By accounting for the substrate effects we obtain a quasiparticle gap that is in excellent agreement with optical absorbance spectra and we deduce an exciton binding energy of about 480 meV. We identify several intrinsic lattice defects that are ubiquitious in MoS2, but we find that on hBN substrates the impact of these defects appears to be passivated. We conclude that the choice of substrate controls both the effects of intrinsic defects and extrinsic disorder, and thus the electronic and optical properties of MoS2. The correlation of substrate induced disorder and defects on the electronic and optical properties of MoS2 contributes to an in-depth understanding of the role of the substrates on the performance of 2D materials and will help to further improve the properties of 2D materials based quantum nanosystems. △ Less

Submitted 3 May, 2019; originally announced May 2019.

Comments: 23 pages, 4 figures

Atomistic defect states as quantum emitters in monolayer MoS$_2$

Authors: Julian Klein, Michael Lorke, Matthias Florian, Florian Sigger, Jakob Wierzbowski, John Cerne, Kai Müller, Takashi Taniguchi, Kenji Watanabe, Ursula Wurstbauer, Michael Kaniber, Michael Knap, Richard Schmidt, Jonathan J. Finley, Alexander W. Holleitner

Abstract: Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overco… ▽ More Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overcome this challenge by controllably irradiating single-layer MoS$_{2}$ using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion bombarded MoS$_{2}$ flake with high-quality hBN reveals spectrally narrow emission lines that produce photons at optical wavelengths in an energy window of one to two hundred meV below the neutral 2D exciton of MoS$_{2}$. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron-hole complexes at defect states generated by the helium ion bombardment. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and exotic Hubbard systems. △ Less

Submitted 14 January, 2019; v1 submitted 4 January, 2019; originally announced January 2019.

Comments: Main: 9 pages, 3 figures + SI: 19 pages, 10 figures

Journal ref: Nature Communications 10, 2755 (2019)

Spin Hall photoconductance in a 3D topological insulator at room temperature

Authors: Paul Seifert, Kristina Vaklinova, Sergey Ganichev, Klaus Kern, Marko Burghard, Alexander W. Holleitner

Abstract: Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a spin locked perpendicularly to it in the surface plane. While the principal spin generation capability of topological insulators is well established, comparative… ▽ More Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a spin locked perpendicularly to it in the surface plane. While the principal spin generation capability of topological insulators is well established, comparatively little is known about the interaction of the spins with external stimuli like polarized light. We observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi2Te2Se platelets for perpendicular incidence of light. The same edges exhibit also a finite bias-dependent Kerr angle, indicative of spin accumulation induced by a transversal spin Hall effect in the bulk states of the Bi2Te2Se platelets. A symmetry analysis shows that the helical photoconductance is distinct to common longitudinal photoconductance and photocurrent phenomena, but consistent with the accumulated spins being transported in the side facets of the platelets. Our findings demonstrate that spin effects in the facets of 3D topological insulators can be addressed and read-out in optoelectronic devices even at room temperatures. △ Less

Submitted 1 August, 2017; originally announced August 2017.

Contact morphology and revisited photocurrent dynamics in monolayer MoS2

Authors: Eric Parzinger, Martin Hetzl, Ursula Wurstbauer, Alexander W. Holleitner

Abstract: Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have emerged as promising materials for electronic, optoelectronic, and valleytronic applications. Recent work suggests drastic changes of the band gap and exciton binding energies of photo-excited TMDs with ultrafast non-radiative relaxation processes effectively heating the crystal lattice. Such phenomena have not been consider… ▽ More Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have emerged as promising materials for electronic, optoelectronic, and valleytronic applications. Recent work suggests drastic changes of the band gap and exciton binding energies of photo-excited TMDs with ultrafast non-radiative relaxation processes effectively heating the crystal lattice. Such phenomena have not been considered in the context of optoelectronic devices yet. We resolve corresponding ultrafast photo-conductance dynamics within monolayer MoS2 and demonstrate that a bolometric contribution dominates the overall photoconductance. We further reveal that a focused laser illumination, as is used in many standard optoelectronic measurements of MoS2, modifies and anneals the morphology of metal contacts. We show that a junction evolves with lateral built-in electric fields, although Raman- and photoluminescence spectra indicate no significant changes such as a crystal phase transition. We highlight how such optimized devices can drive ultrafast electromagnetic signals in on-chip high-frequency and THz circuits. △ Less

Submitted 1 August, 2017; originally announced August 2017.

Robust valley polarization of helium ion modified atomically thin MoS$_{2}$

Authors: Julian Klein, Agnieszka Kuc, Anna Nolinder, Marcus Altzschner, Jakob Wierzbowski, Florian Sigger, Franz Kreupl, Jonathan J. Finley, Ursula Wurstbauer, Alexander W. Holleitner, Michael Kaniber

Abstract: Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties is essential for typical exposure doses used during fabrication. Here, we explore how focused helium ion bombardment affects the intrinsic vibrational, luminesc… ▽ More Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties is essential for typical exposure doses used during fabrication. Here, we explore how focused helium ion bombardment affects the intrinsic vibrational, luminescence and valleytronic properties of atomically thin MoS$_{2}$. By probing the disorder dependent vibrational response we deduce the interdefect distance by applying a phonon confinement model. We show that the increasing interdefect distance correlates with disorder-related luminescence arising 180 meV below the neutral exciton emission. We perform ab-initio density functional theory of a variety of defect related morphologies, which yield first indications on the origin of the observed additional luminescence. Remarkably, no significant reduction of free exciton valley polarization is observed until the interdefect distance approaches a few nanometers, namely the size of the free exciton Bohr radius. Our findings pave the way for direct writing of sub-10 nm nanoscale valleytronic devices and circuits using focused helium ions. △ Less

Submitted 19 February, 2018; v1 submitted 3 May, 2017; originally announced May 2017.

Comments: 9 pages, 5 figures

Journal ref: 2D Materials, 5 011007 (2018)

Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit

Authors: Jakob Wierzbowski, Julian Klein, Florian Sigger, Christian Straubinger, Malte Kremser, Takashi Taniguchi, Kenji Watanabe, Ursula Wurstbauer, Alexander W. Holleitner, Michael Kaniber, Kai Müller, Jonathan J. Finley

Abstract: We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to $\sim3.5 \text{ meV}$ for n-MoSe$_{2}$, $\sim5.0 \text{ meV}$ for p-WSe… ▽ More We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to $\sim3.5 \text{ meV}$ for n-MoSe$_{2}$, $\sim5.0 \text{ meV}$ for p-WSe$_{2}$ and $\sim4.8 \text{ meV}$ for n-MoS$_{2}$. Evidence is obtained that the hBN environment effectively lowers the Fermi level since the relative spectral weight shifts towards the neutral exciton emission in n-doped TMDCs and towards charged exciton emission in p-doped TMDCs. Moreover, we find that fully encapsulated MoS$_{2}$ shows resolvable exciton and trion emission even after high power density excitation in contrast to non-encapsulated materials. Our findings suggest that encapsulation of mechanically exfoliated few-monolayer TMDCs within nanometer thick hBN dramatically enhances optical quality, producing ultra-narrow linewidths that approach the homogeneous limit. △ Less

Submitted 30 April, 2017; originally announced May 2017.

Ballistic and resonant negative photocurrents in semiconducting carbon nanotubes

Authors: Christoph Karnetzky, Lukas Sponfeldner, Max Engl, Alexander W. Holleitner

Abstract: Ultrafast photocurrent experiments are performed on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. The photogenerated excitons are dissociated at large electric fields and the resulting transport of the charge carriers turns out to be ballistic. Thermionic emission processes to the contacts dominate the photocurrent. The charge current without… ▽ More Ultrafast photocurrent experiments are performed on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. The photogenerated excitons are dissociated at large electric fields and the resulting transport of the charge carriers turns out to be ballistic. Thermionic emission processes to the contacts dominate the photocurrent. The charge current without laser excitation is well described by a Fowler-Nordheim tunneling. The time-averaged photocurrent changes polarity as soon as sufficient charge carriers are injected from the contacts, which can be explained by an effective population inversion in the optically pumped subbands. △ Less

Submitted 9 January, 2017; originally announced January 2017.

Journal ref: Phys. Rev. B 95, 161405 (2017)

Collective electronic excitation in a trapped ensemble of photogenerated dipolar excitons and free holes revealed by inelastic light scattering

Authors: Sebastian Dietl, Sheng Wang, Dieter Schuh, Werner Wegscheider, Jörg P. Kotthaus, Aron Pinczuk, Alexander W. Holleitner, Ursula Wurstbauer

Abstract: Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are probed by a complementary approach of emission spectroscopy and resonant inelastic light scattering. Lateral electrostatic trap geometries are used to create dense systems of spatially indirect excitons and excess holes with similar densities in the order of 10$^{11}$ cm$^{-2}$. Inelastic light scattering spectra reveal… ▽ More Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are probed by a complementary approach of emission spectroscopy and resonant inelastic light scattering. Lateral electrostatic trap geometries are used to create dense systems of spatially indirect excitons and excess holes with similar densities in the order of 10$^{11}$ cm$^{-2}$. Inelastic light scattering spectra reveal a very sharp low-lying collective mode that is identified at an energy of 0.44 meV and a FWHM of only ~50 $μ$eV. This mode is interpreted as a plasmon excitation of the excess hole system coupled to the photogenerated indirect excitons. The emission energy of the indirect excitons shifts under the application of a perpendicular applied electric field with the quantum-confined Stark effect unperturbed from the presence of free charge carriers. Our results illustrate the potential of studying low-lying collective excitations in photogenerated exciton systems to explore the many-body phase diagram, related phase transitions, and interaction physics. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Comments: 19 pages, 5 figures

Light matter interaction in transition metal dichalcogenides and their heterostructures

Authors: Ursula Wurstbauer, Bastian Miller, Eric Parzinger, Alexander W. Holleitner

Abstract: The investigation of 2D van der Waals (vdW) materials is a vibrant, fast moving and still growing interdisciplinary area of research. 2D vdW materials are truly 2D crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers with a variety of different electronic, optical and mechanical properties. A very prominent class of 2D materials are transition metal di… ▽ More The investigation of 2D van der Waals (vdW) materials is a vibrant, fast moving and still growing interdisciplinary area of research. 2D vdW materials are truly 2D crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers with a variety of different electronic, optical and mechanical properties. A very prominent class of 2D materials are transition metal dichalcogenides (TMDs) and amongst them particularly the semiconducting subclass. Their properties include bandgaps in the near-infrared to the visible range, decent charge carrier mobility together with high (photo-)catalytic and mechanical stability and exotic many body phenomena. These characteristics make the materials highly attractive for both fundamental research as well as innovative device applications. Furthermore, the materials exhibit a strong light matter interaction providing a high sun light absorbance of up to 15% in the monolayer limit, strong scattering cross section in Raman experiments and access to excitonic phenomena in vdW heterostructures. This review focuses on the light matter interaction in MoS2, WS2, MoSe2, and WSe2 that is dictated by the materials complex dielectric functions and on the multiplicity of studying the first order phonon modes by Raman spectroscopy to gain access to several material properties such as doping, strain, defects and temperature. 2D materials provide an interesting platform to stack them into vdW heterostructures without the limitation of lattice mismatch resulting in novel devices for application but also to study exotic many body interaction phenomena such as interlayer excitons. Future perspectives of semiconducting TMDs and their heterostructures for applications in optoelectronic devices will be examined and routes to study emergent fundamental problems and many-body quantum phenomena under excitations with photons will be discussed. △ Less

Submitted 16 November, 2016; originally announced November 2016.

Comments: 30 pages, 11 figures

Overflow of a dipolar exciton trap at high magnetic fields

Authors: S. Dietl, K. Kowalik-Seidl, D. Schuh, W. Wegscheider, A. W. Holleitner, U. Wurstbauer

Abstract: We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identify three magnetic field regimes. At low fields, the exciton density is increased by a reduced charge carrier escape from the trap, and additionally, the excitons' emission energy is corrected by a positive diamagnetic sh… ▽ More We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identify three magnetic field regimes. At low fields, the exciton density is increased by a reduced charge carrier escape from the trap, and additionally, the excitons' emission energy is corrected by a positive diamagnetic shift. At intermediate fields, magnetic field dependent correction terms apply which follow the characteristics of a neutral magnetoexciton. Due to a combined effect of an increasing binding energy and lifetime, the exciton density is roughly doubled from zero to about seven Tesla. At the latter high field value, the charge carriers occupy only the lowest Landau level. In this situation, the exciton trap can overflow independently from the electrostatic depth of the trapping potential, and the energy shift of the excitons caused by the so-called quantum confined Stark effect is effectively compensated. Instead, the exciton energetics seem to be driven by the magnetic field dependent renormalization of the many-body interaction terms. In this regime, the impact of parasitic in-plane fields at the edge of trapping potential is eliminated. △ Less

Submitted 16 November, 2016; originally announced November 2016.

Comments: 18 pages, 4 figures

THz-circuits driven by photo-thermoelectric graphene-junctions

Authors: Andreas Brenneis, Felix Schade, Simon Drieschner, Florian Heimbach, Helmut Karl, Jose A. Garrido, Alexander W. Holleitner

Abstract: For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of p… ▽ More For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches. △ Less

Submitted 5 July, 2016; originally announced July 2016.

Imaging Spectroscopic Ellipsometry of Mono- and Few-layer MoS2

Authors: S. Funke, B. Miller, E. Parzinger, P. Thiesen, A. W. Holleitner, U. Wurstbauer

Abstract: Micromechanically exfoliated mono- and multilayers of molybdenum disulfide (MoS2) are investigated by spectroscopic imaging ellipsometry. In combination with knife edge illumination, MoS2 flakes can be detected and classified on arbitrary flat and also transparent substrates with a lateral resolution down to 1 to 2 um. The complex dielectric functions from mono- and trilayer MoS2 are presented. Th… ▽ More Micromechanically exfoliated mono- and multilayers of molybdenum disulfide (MoS2) are investigated by spectroscopic imaging ellipsometry. In combination with knife edge illumination, MoS2 flakes can be detected and classified on arbitrary flat and also transparent substrates with a lateral resolution down to 1 to 2 um. The complex dielectric functions from mono- and trilayer MoS2 are presented. They are extracted from a multilayer model to fit the measured ellipsometric angles employing an anisotropic and an isotropic fit approach. We find that the energies of the critical points of the optical constants can be treated to be independent of the utilized model, whereas the magnitude of the optical constants varies with the used model. The anisotropic model suggests a maximum absorbance for a MoS2 sheet supported by sapphire of about 14 % for monolayer and of 10 % for trilayer MoS2. Furthermore, the lateral homogeneity of the complex dielectric function for monolayer MoS2 is investigated with a spatial resolution of 2 um. Only minor fluctuations are observed. No evidence for strain, for a significant amount of disorder or lattice defects can be found in the wrinkle-free regions of the MoS2 monolayer from complementary Raman spectroscopy measurements. We assume that the minor lateral variation in the optical constants are caused by lateral modification in the van der Waals interaction presumably caused by the preparation using micromechanical exfoliation and viscoelastic stamping. △ Less

Submitted 16 November, 2016; v1 submitted 21 March, 2016; originally announced March 2016.

Comments: Manuscript and Supplementary Material

Journal ref: J. Phys.: Condens. Matter 28 (2016) 385301

Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires

Authors: Nadine Erhard, Stefan Zenger, Stefanie Morkötter, Daniel Rudolph, Matthias Weiss, Hubert J. Krenner, Helmut Karl, Gerhard Abstreiter, Jonathan J. Finley, Gregor Koblmüller, Alexander W. Holleitner

Abstract: We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based… ▽ More We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photo-thermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors. △ Less

Submitted 16 November, 2015; originally announced November 2015.

Photocurrents in a Single InAs Nanowire/ Silicon Heterojunction

Authors: Andreas Brenneis, Jan Overbeck, Julian Treu, Simon Hertenberger, Stefanie Morkötter, Markus Döblinger, Jonathan J. Finley, Gerhard Abstreiter, Gregor Koblmüller, Alexander W. Holleitner

Abstract: We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through mid-gap trap states, which form at the Si… ▽ More We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through mid-gap trap states, which form at the Si/InAs heterojunctions. Namely, the trap states add an additional transport path across a heterojunction, and the charge of the defects changes the band bending at the junction. The bending gives rise to a photovoltaic effect at a small bias voltage. In addition, we observe a photoconductance effect within the InAs nanowires at large biases. △ Less

Submitted 5 October, 2015; originally announced October 2015.

Photogating of mono- and few-layer MoS2

Authors: Bastian Miller, Eric Parzinger, Anna Vernickel, Alexander W. Holleitner, Ursula Wurstbauer

Abstract: We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed environmental molecules, that effectively deplete the intrinsically n-doped charge carrier system via charge transfer, and which can be gradually removed by the exposure… ▽ More We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed environmental molecules, that effectively deplete the intrinsically n-doped charge carrier system via charge transfer, and which can be gradually removed by the exposure to light. This photogating process is reversible and precisely tunable by the light intensity. The photogating efficiency is quantified by comparison with measurements on electrostatically gated MoS2. △ Less

Submitted 2 March, 2015; originally announced March 2015.

Journal ref: Appl. Phys. Lett. 106, 122103 (2015)

Ultrafast photocurrents and THz generation in single InAs-nanowires

Authors: Nadine Erhard, Paul Seifert, Leonhard Prechtel, Simon Hertenberger, Helmut Karl, Gerhard Abstreiter, Gregor Koblmuller, Alexander W. Holleitner

Abstract: To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contr… ▽ More To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, it is shown that THz radiation is generated in the optically excited InAs-nanowires, which is interpreted in terms of a dominating photo-Dember effect. The results are relevant for nanowire-based optoelectronic and photovoltaic applications as well as for the design of nanowire-based THz sources. △ Less

Submitted 12 February, 2015; originally announced February 2015.

Optical control of internal electric fields in band-gap graded InGaN nanowires

Authors: N. Erhard, A. T. M. Golam Sarwar, F. Yang, D. W. McComb, R. C. Myers, A. W. Holleitner

Abstract: InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differe… ▽ More InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps. △ Less

Submitted 12 February, 2015; originally announced February 2015.

Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity

Authors: Christoph Kastl, Christoph Karnetzky, Helmut Karl, Alexander W. Holleitner

Abstract: In recent years, a class of solid state materials, called three-dimensional topological insulators, has emerged. In the bulk, a topological insulator behaves like an ordinary insulator with a band gap. At the surface, conducting gapless states exist showing remarkable properties such as helical Dirac dispersion and suppression of backscattering of spin-polarized charge carriers. The characterizati… ▽ More In recent years, a class of solid state materials, called three-dimensional topological insulators, has emerged. In the bulk, a topological insulator behaves like an ordinary insulator with a band gap. At the surface, conducting gapless states exist showing remarkable properties such as helical Dirac dispersion and suppression of backscattering of spin-polarized charge carriers. The characterization and control of the surface states via transport experiments is often hindered by residual bulk contributions yet at cryogenic temperatures. Here, we show that surface currents in Bi2Se3 can be controlled by circularly polarized light on a picosecond time scale with a fidelity near unity even at room temperature. We re-veal the temporal separation of such ultrafast helicity-dependent surface currents from photo-induced thermoelectric and drift currents in the bulk. Our results uncover the functionality of ultrafast optoelectronic devices based on surface currents in topological insulators. △ Less

Submitted 30 January, 2015; originally announced January 2015.

Comments: 19 pages, 4 figures, supplementary information

Journal ref: Nat. Commun. 6, 6617 (2015)

Confocal shift interferometry of coherent emission from trapped dipolar excitons

Authors: Jens Repp, Georg J. Schinner, Enrico Schubert, Ashish K. Rai, Dirk Reuter, Andreas D. Wieck, Ursula Wurstbauer, Joerg P. Kotthaus, Alexander W. Holleitner

Abstract: We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic em… ▽ More We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic emission coincides with the point spread function of the confocal setup. The results are consistent with a temporal coherence of the excitonic emission down to temperatures of 250 mK. △ Less

Submitted 19 November, 2014; originally announced November 2014.

Comments: 5 pages, 3 figures

Ultrafast electronic read-out of diamond NV centers coupled to graphene

Authors: Andreas Brenneis, Louis Gaudreau, Max Seifert, Helmut Karl, Martin S. Brandt, Hans Huebl, Jose A. Garrido, Frank H. L. Koppens, Alexander W. Holleitner

Abstract: Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy centers in diamond, can exhibit a strong nonradiative energy transfer to graphene. So far, the energy of the transferred electronic excitations has been co… ▽ More Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy centers in diamond, can exhibit a strong nonradiative energy transfer to graphene. So far, the energy of the transferred electronic excitations has been considered to be lost within the electron bath of the graphene. Here, we demonstrate that the trans-ferred excitations can be read-out by detecting corresponding currents with picosecond time resolution. We electrically detect the spin of nitrogen vacancy centers in diamond electronically and con-trol the nonradiative transfer to graphene by electron spin resonance. Our results open the avenue for incorporating nitrogen vacancy centers as spin qubits into ultrafast electronic circuits and for harvesting non-radiative transfer processes electronically. △ Less

Submitted 8 August, 2014; originally announced August 2014.

Report number: Nature Nanotechnology, 10, 2, 135, (2015)

Journal ref: http://www.nature.com/nnano/journal/v10/n2/full/nnano.2014.276.html

Polarization dependent, surface plasmon induced photoconductance in gold nanorod arrays

Authors: S. Diefenbach, N. Erhard, J. Schopka, A. Martin, C. Karnetzky, D. Iacopino, A. W. Holleitner

Abstract: We report on the photoconductance in two-dimensional arrays of gold nanorods which is strongly enhanced at the frequency of the longitudinal surface plasmon of the nanorods. The arrays are formed by a combination of droplet deposition and stamping of gold nanorod solutions on SiO2 substrates. We find that the plasmon induced photoconductance is sensitive to the linear polarization of the exciting… ▽ More We report on the photoconductance in two-dimensional arrays of gold nanorods which is strongly enhanced at the frequency of the longitudinal surface plasmon of the nanorods. The arrays are formed by a combination of droplet deposition and stamping of gold nanorod solutions on SiO2 substrates. We find that the plasmon induced photoconductance is sensitive to the linear polarization of the exciting photons. We interpret the occurrence of the photoconductance as a bolometric enhancement of the arrays' conductance upon excitation of the longitudinal surface plasmon resonance of the nanorods. △ Less

Submitted 5 November, 2013; originally announced November 2013.

Comments: 15 pages, 3 figures

Low dimensionality of the diamond surface conductivity

Authors: Moritz V. Hauf, Patrick Simon, Max Seifert, Alexander W. Holleitner, Martin Stutzmann, Jose A. Garrido

Abstract: Undoped diamond, a remarkable bulk electrical insulator, exhibits a high surface conductivity in air when the surface is hydrogen-terminated. Although theoretical models have claimed that a two-dimensional hole gas is established as a result of surface energy band bending, no definitive experimental demonstration has been reported so far. Here, we prove the two-dimensional character of the surface… ▽ More Undoped diamond, a remarkable bulk electrical insulator, exhibits a high surface conductivity in air when the surface is hydrogen-terminated. Although theoretical models have claimed that a two-dimensional hole gas is established as a result of surface energy band bending, no definitive experimental demonstration has been reported so far. Here, we prove the two-dimensional character of the surface conductivity by low temperature characterization of diamond in-plane gated field-effect transistors that enable the lateral confinement of the transistor's drain-source channel to nanometer dimensions. In these devices, we observe Coulomb blockade effects of multiple quantum islands varying in size with the gate voltage. The charging energy and thus the size of these zero-dimensional islands exhibits a gate voltage dependence which is the direct result of the two-dimensional character of the conductive channel formed at hydrogen-terminated diamond surfaces. △ Less

Submitted 31 October, 2013; originally announced October 2013.

Journal ref: Phys. Rev. B 89, 115426 (2014)

Local photocurrent generation in thin films of the topological insulator Bi2Se3

Authors: C. Kastl, T. Guan, X. Y. He, K. H. Wu, Y. Q. Li, A. W. Holleitner

Abstract: We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitude. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits… ▽ More We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitude. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations. △ Less

Submitted 17 October, 2012; originally announced October 2012.

Journal ref: Appl. Phys. Lett. 101, 251110 (2012)

Broadband Purcell enhanced emission dynamics of quantum dots in linear photonic crystal waveguides

Authors: Arne Laucht, Thomas Günthner, Simon Pütz, Rebecca Saive, Simon Frédérick, Norman Hauke, Max Bichler, Markus-Christian Amann, Alexander W. Holleitner, Michael Kaniber, Jonathan J. Finley

Abstract: The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally, and time-resolved photoluminescence measurements, detecting normal to the plane of the photonic crystal. For quantum dots emitting in resonance with the wavegui… ▽ More The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally, and time-resolved photoluminescence measurements, detecting normal to the plane of the photonic crystal. For quantum dots emitting in resonance with the waveguide mode, a ~21x enhancement of photoluminescence intensity is observed as compared to dots in the unprocessed region of the wafer. This enhancement can be traced back to the Purcell enhanced emission of quantum dots into leaky and guided modes of the waveguide with moderate Purcell factors up to ~4x. Emission into guided modes is shown to be efficiently scattered out of the waveguide within a few microns, contributing to the out-of-plane emission and allowing the use of photonic crystal waveguides as broadband, efficiency-enhancing structures for surface-emitting diodes or single photon sources. △ Less

Submitted 7 May, 2012; originally announced May 2012.

Comments: 13 pages, 4 figures

Journal ref: Journal of Applied Physics 112, 093520 (2012)

Single exciton emission from gate-defined quantum dots

Authors: G. J. Schinner, J. Repp, E. Schubert, A. K. Rai, D. Reuter, A. D. Wieck, A. O. Govorov, A. W. Holleitner, J. P. Kotthaus

Abstract: With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcit… ▽ More With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization. The quantum dot states are tunable by gate voltage and employing a magnetic field results in a diamagnetic shift. The scheme introduces a new gate-defined platform for creating and controlling optically active quantum dots and opens the route to lithographically defined coupled quantum dot arrays with tunable in-plane coupling and voltage-controlled optical properties of single charge and spin states. △ Less

Submitted 14 April, 2012; originally announced April 2012.

A Waveguide-Coupled On-Chip Single Photon Source

Authors: A. Laucht, S. Pütz, T. Günthner, N. Hauke, R. Saive, S. Frédérick, M. Bichler, M. -C. Amann, A. W. Holleitner, M. Kaniber, J. J. Finley

Abstract: We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0.5 \mum. Time-resolved photoluminescence and photon autocorrelation measurements are… ▽ More We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0.5 \mum. Time-resolved photoluminescence and photon autocorrelation measurements are used to prove the single photon character of the emission into the propagating waveguide mode. The results obtained demonstrate that such nanostructures can be used to realize an on-chip, highly directed single photon source with single mode spontaneous emision coupling efficiencies in excess of beta~85 % and the potential to reach maximum emission rates >1 GHz. △ Less

Submitted 31 January, 2012; v1 submitted 24 January, 2012; originally announced January 2012.

Comments: submitted on September 26, 2011

Journal ref: Phys. Rev. X 2, 011014 (2012)

Many-body correlations of electrostatically trapped dipolar excitons

Authors: G. J. Schinner, J. Repp, E. Schubert, A. K. Rai, D. Reuter, A. D. Wieck, A. O. Govorov, A. W. Holleitner, J. P. Kotthaus

Abstract: We study the photoluminescence (PL) of a two-dimensional liquid of oriented dipolar excitons in In_{x}Ga_{1-x}As coupled double quantum wells confined to a microtrap. Generating excitons outside the trap and transferring them at lattice temperatures down to T = 240 mK into the trap we create cold quasi-equilibrium bosonic ensembles of some 1000 excitons with thermal de Broglie wavelengths exceedin… ▽ More We study the photoluminescence (PL) of a two-dimensional liquid of oriented dipolar excitons in In_{x}Ga_{1-x}As coupled double quantum wells confined to a microtrap. Generating excitons outside the trap and transferring them at lattice temperatures down to T = 240 mK into the trap we create cold quasi-equilibrium bosonic ensembles of some 1000 excitons with thermal de Broglie wavelengths exceeding the excitonic separation. With decreasing temperature and increasing density n <= 5*10^10 cm^{-2} we find an increasingly asymmetric PL lineshape with a sharpening blue edge and a broad red tail which we interpret to reflect correlated behavior mediated by dipolar interactions. From the PL intensity I(E) below the PL maximum at E_{0} we extract at T < 5 K a distinct power law I(E) \sim (E_{0}-E)^-|α| with -|α|\sim -0.8 in the range E_{0}-E of 1.5-4 meV, comparable to the dipolar interaction energy. △ Less

Submitted 14 April, 2012; v1 submitted 30 November, 2011; originally announced November 2011.

Electrical control of inter-dot electron tunneling in a quantum dot molecule

Authors: K. Müller, A. Bechtold, C. Ruppert, M. Zecherle, G. Reithmaier, M. Bichler, H. J. Krenner, G. Abstreiter, A. W. Holleitner, J. M. Villas-Bôas, J. J. Finley

Abstract: We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe spectrum due to Coulomb interactions between the photo-generated charge carriers. By tuning the relative energy of the orbital states in the two dots and monitorin… ▽ More We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe spectrum due to Coulomb interactions between the photo-generated charge carriers. By tuning the relative energy of the orbital states in the two dots and monitoring the temporal evolution of the pump-probe spectra the electron and hole tunneling times are separately measured and resonant tunneling between the two dots is shown to be mediated both by elastic and inelastic processes. Ultrafast (< 5 ps) inter-dot tunneling is shown to occur over a surprisingly wide bandwidth, up to ~8 meV, reflecting the spectrum of exciton-acoustic phonon coupling in the system. △ Less

Submitted 17 April, 2012; v1 submitted 14 November, 2011; originally announced November 2011.

Journal ref: Phys. Rev. Lett. 108, 197402 (2012)

Forming and confining of dipolar excitons by quantizing magnetic fields

Authors: K. Kowalik-Seidl, X. P. Vögele, F. Seilmeier, D. Schuh, W. Wegscheider, A. W. Holleitner, J. P. Kotthaus

Abstract: We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illumin… ▽ More We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illuminated region. Depending on the excitation power and the applied electric field, the hole density can be tuned over one order of magnitude up to $\sim 2.5$ $10^{11} cm^{-2}$ - a value comparable with typical carrier densities in modulation-doped structures. △ Less

Submitted 16 February, 2011; v1 submitted 2 September, 2010; originally announced September 2010.

Comments: 4.3 Pages, 4 Figures

Journal ref: Physical Review B 83, 081307(R) (2011)

Spatially resolved ultrafast transport current in GaAs photoswitches

Authors: L. Prechtel, S. Manus, D. Schuh, W. Wegscheider, A. W. Holleitner

Abstract: We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as has been reported earlier. A time-delayed second pulse is interpreted by a transport current. A time-of-flight analysis allows us to determine the velocity of the photogenerated charge carriers in the transport c… ▽ More We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as has been reported earlier. A time-delayed second pulse is interpreted by a transport current. A time-of-flight analysis allows us to determine the velocity of the photogenerated charge carriers in the transport current. It exceeds the Fermi and the single-particle quantum velocities. This suggests that the excitation of a collective electron-hole plasma and not single charge-carriers dominates the ultrafast transport current in GaAs photoswitches. △ Less

Submitted 11 May, 2010; originally announced May 2010.

Comments: 10 pages, 3 figures

Exploiting and engineering the optical field-enhancement in metal nanoparticle based circuits

Authors: Markus A. Mangold, Christoph Weiss, Beate Dirks, Alexander W. Holleitner

Abstract: We study the impact of optical field-enhancement effects on the optoelectronic properties of metal nanoparticle arrays. Applying a focused ion beam lithography in combination with an electron beam deposition technique we can pattern electrical contacts in a way to give rise to an electromagnetic field-enhancement. A further field-enhancement is achieved by the plasmon resonance of the particles. B… ▽ More We study the impact of optical field-enhancement effects on the optoelectronic properties of metal nanoparticle arrays. Applying a focused ion beam lithography in combination with an electron beam deposition technique we can pattern electrical contacts in a way to give rise to an electromagnetic field-enhancement. A further field-enhancement is achieved by the plasmon resonance of the particles. Both effects are directly observed in the photoconductance of the arrays. △ Less

Submitted 29 April, 2010; originally announced April 2010.

Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

Authors: M. Stallhofer, M. Seifert, M. Hauf, G. Abstreiter, M. Stutzmann, J. Garrido, A. W. Holleitner

Abstract: We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated elec… ▽ More We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated electrons being trapped in defect levels within the barrier. We discuss the spatial and energetic characteristics of the optoelectronic phenomena, as well as possible photocurrent effects. △ Less

Submitted 22 April, 2010; originally announced April 2010.

Long exciton spin memory in coupled quantum wells

Authors: Katarzyna Kowalik-Seidl, Xaver P. Vögele, Bernhard N. Rimpfl, Stephan Manus, Dieter Schuh, Werner Wegscheider, Alexander W. Holleitner, Jörg P. Kotthaus

Abstract: Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pumping laser pulse, de… ▽ More Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pumping laser pulse, demonstrating directly a very long relaxation time of exciton spin. The observed spin memory effect exceeds the radiative lifetime of the indirect excitons. △ Less

Submitted 16 July, 2010; v1 submitted 1 April, 2010; originally announced April 2010.

Comments: 4 pages, 2 figures

Journal ref: Appl. Phys. Lett. 97, 011104 (2010)