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Enhanced Electron Spin Coherence in a GaAs Quantum Emitter
Authors:
Giang N. Nguyen,
Clemens Spinnler,
Mark R. Hogg,
Liang Zhai,
Alisa Javadi,
Carolin A. Schrader,
Marcel Erbe,
Marcus Wyss,
Julian Ritzmann,
Hans-Georg Babin,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of on-demand coherent photons. However, the spin rapidly decoheres via the magnetic noise arising from the host nuclei. Here, we address this drawback by implementi…
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A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of on-demand coherent photons. However, the spin rapidly decoheres via the magnetic noise arising from the host nuclei. Here, we address this drawback by implementing an all-optical nuclear-spin cooling scheme on a GaAs quantum dot. The electron-spin coherence time increases 156-fold from $T_2^*$ = 3.9 ns to 0.608 $μ$s. The cooling scheme depends on a non-collinear term in the hyperfine interaction. The results show that such a term is present even though the strain is low and no external stress is applied. Our work highlights the potential of optically-active GaAs quantum dots as fast, highly coherent spin-photon interfaces.
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Submitted 5 July, 2023;
originally announced July 2023.
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Cavity-enhanced single-shot readout of a quantum dot spin within 3 nanoseconds
Authors:
Nadia Olympia Antoniadis,
Mark Richard Hogg,
Willy Frederik Stehl,
Alisa Javadi,
Natasha Tomm,
Rüdiger Schott,
Sascha René Valentin,
Andreas Dirk Wieck,
Arne Ludwig,
Richard John Warburton
Abstract:
Rapid, high-fidelity single-shot readout of quantum states is a ubiquitous requirement in quantum information technologies, playing a crucial role in quantum computation, quantum error correction, and fundamental tests of non-locality. Readout of the spin state of an optically active emitter can be achieved by driving a spin-preserving optical transition and detecting the emitted photons. The spee…
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Rapid, high-fidelity single-shot readout of quantum states is a ubiquitous requirement in quantum information technologies, playing a crucial role in quantum computation, quantum error correction, and fundamental tests of non-locality. Readout of the spin state of an optically active emitter can be achieved by driving a spin-preserving optical transition and detecting the emitted photons. The speed and fidelity of this approach is typically limited by a combination of low photon collection rates and measurement back-action. Here, we demonstrate single-shot optical readout of a semiconductor quantum dot spin state, achieving a readout time of only a few nanoseconds. In our approach, gated semiconductor quantum dots are embedded in an open microcavity. The Purcell enhancement generated by the microcavity increases the photon creation rate from one spin state but not from the other, as well as efficiently channelling the photons into a well-defined detection mode. We achieve single-shot readout of an electron spin state in 3 nanoseconds with a fidelity of (95.2$\pm$0.7)%, and observe quantum jumps using repeated single-shot measurements. Owing to the speed of our readout, errors resulting from measurement-induced back-action have minimal impact. Our work reduces the spin readout-time to values well below both the achievable spin relaxation and dephasing times in semiconductor quantum dots, opening up new possibilities for their use in quantum technologies.
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Submitted 25 October, 2022;
originally announced October 2022.
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Single-shot readout of multiple donor electron spins with a gate-based sensor
Authors:
Mark R. Hogg,
Prasanna Pakkiam,
Samuel K. Gorman,
Andrey V. Timofeev,
Yousun Chung,
Gurpreet K. Gulati,
Matthew G. House,
Michelle Y. Simmons
Abstract:
Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the s…
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Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the sensors, and extending the range of each sensor to read more qubits. Here we show high-fidelity single-shot electron spin readout using a nanoscale single-lead quantum dot (SLQD) sensor that is both compact and capable of reading multiple qubits. Our gate-based SLQD sensor is deployed in an all-epitaxial silicon donor spin qubit device, and we demonstrate single-shot readout of three $^{31}$P donor quantum dot electron spins with a maximum fidelity of 95%. Importantly in our device the quantum dot confinement potentials are provided inherently by the donors, removing the need for additional metallic confinement gates and resulting in strong capacitive interactions between sensor and donor quantum dots. We observe a $1/d^{1.4}$ scaling of the capacitive coupling between sensor and $^{31}$P dots (where $d$ is the sensor-dot distance), compared to $1/d^{2.5-3.0}$ in gate-defined quantum dot devices. Due to the small qubit size and strong capacitive interactions in all-epitaxial donor devices, we estimate a single sensor can achieve single-shot readout of approximately 15 qubits in a linear array, compared to 3-4 qubits for a similar sensor in a gate-defined quantum dot device. Our results highlight the potential for spin qubit devices with significantly reduced sensor densities.
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Submitted 17 March, 2022;
originally announced March 2022.
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Single-shot single-gate RF spin readout in silicon
Authors:
P. Pakkiam,
A. V. Timofeev,
M. G. House,
M. R. Hogg,
T. Kobayashi,
M. Koch,
S. Rogge,
M. Y. Simmons
Abstract:
For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is,…
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For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is, a single measurement (DiVincenzo 2000). Here we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of $82.9\%$ at a $3.3~\text{kHz}$ measurement bandwidth. We use this technique to measure a triplet $T_-$ to singlet $S_0$ relaxation time of $0.62~\text{ms}$ in precision donor quantum dots in silicon. We also show that the use of RF readout does not impact the maximum readout time at zero detuning limited by the $S_0$ to $T_-$ decay, which remained at approximately $2~\text{ms}$. This establishes single-gate sensing as a viable readout method for spin qubits.
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Submitted 5 September, 2018;
originally announced September 2018.
