Showing 1–2 of 2 results for author: Guseinov, D
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Stochastic Memristive Interface between Electronic FitzHugh-Nagumo Neurons
Authors:
S. Gerasimova,
A. Belov,
D. Korolev,
D. Guseinov,
A. Lebedeva,
M. Koryazhkina,
A. Mikhaylov,
V. Kazantsev,
A. N. Pisarchik
Abstract:
The dynamics of memristive device in response to neuron-like signals and coupling electronic neurons via memristive device has been investigated theoretically and experimentally. The simplest experimental system consists of electronic circuit based on the FitzHugh-Nagumo model and metal-oxide memristive device. The hardware-software complex based on commercial data acquisition system is implemente…
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The dynamics of memristive device in response to neuron-like signals and coupling electronic neurons via memristive device has been investigated theoretically and experimentally. The simplest experimental system consists of electronic circuit based on the FitzHugh-Nagumo model and metal-oxide memristive device. The hardware-software complex based on commercial data acquisition system is implemented for the imitation of signal from presynaptic neuron`s membrane and synaptic signal transmission between neurons. The main advantage of our system is that it uses real time dynamics of memristive device. Electrical response of memristive device shows its behavioral flexibility that allows presenting a memristive device as an active synapse. This means an internal adjustment of the parameters of memristive device that leads to modulation of neuron-like signals. Physics-based dynamical model of memristor is developed in MATLAB for numerical simulation of such a memristive interface to describe and predict experimentally observed regularities of synchronization of neuron-like oscillators. FitzHugh-Nagumo circuits time series with a linear or stepwise increase in the signal amplitude are used to study the memristor response and coupling of neuron-like oscillators taking into account the stochasticity of memristor model to compare the numerical and experimental data. The observed forced synchronization modes characterize the dynamic complexity of the memristive device, which requires further description using high-order dynamical models. The developed memristive interface will provide high efficiency in the imitation of the synaptic connection due to its stochastic nature and can be used to increase the flexibility of neuronal connections for neuroprosthetic challenges.
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Submitted 28 February, 2021;
originally announced March 2021.
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Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si
Authors:
A. A. Ezhevskii,
D. V. Guseinov,
A. V. Soukhorukov,
A. V. Novikov,
D. V. Yurasov,
N. S. Gusev
Abstract:
An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization precession during ferromagnetic resonance in a thin permalloy (Py) layer deposited on a Si layer doped by phosphor and bismuth. From the angular depend…
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An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization precession during ferromagnetic resonance in a thin permalloy (Py) layer deposited on a Si layer doped by phosphor and bismuth. From the angular dependences of the dc voltage for different Py/n-Si:Bi structures aligned along the [011] or [100] crystal axes, we were able to distinguish the planar Hall effect (PHE) and ISHE contributions. The ISHE dc voltage signal was proportional to sinθ*sin2θ product for the structure aligned to the [011] crystal axis and to sinθ*cos2θ for the [100] direction. In addition, the PHE dc voltage was observed for the angles corresponded to the sin2θ dependence. It means that for silicon as a many-valley semiconductor, the scattering of spins due to the spin-orbit potential induced by shallow donor in n-type material is dependent on the orientation of the valley axes relative to the direction of the magnetic field.
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Submitted 20 February, 2020;
originally announced February 2020.
