The Interplay Between Imprint, Wake-Up Like Effects and Domains in Ferroelectric AlScN
Authors:
Maike Gremmel,
Simon Fichtner
Abstract:
This paper investigates wake-up and imprint in ferroelectric AlScN films. The study employs a series of I-V and P-E measurements with varying electric field amplitudes and voltage cycles as well as structural investigation via Scanning Electron Microscopy to understand the origin and underlying principle of wake-up and imprint as well as their relation. It is shown that the material can be conside…
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This paper investigates wake-up and imprint in ferroelectric AlScN films. The study employs a series of I-V and P-E measurements with varying electric field amplitudes and voltage cycles as well as structural investigation via Scanning Electron Microscopy to understand the origin and underlying principle of wake-up and imprint as well as their relation. It is shown that the material can be considered wake-up free, however inherent imprint and imprint shift in combination with minor loops result in a wake-up like effect. We introduce a proposition to explain the influence of initial switching cycles on domains, their stabilization and corresponding changes in imprint. Unipolar fields and temperature investigations are used to explore the reversibility of imprint and ways to program it, while partial switching is applied to investigate domain propagation and support the aforementioned approach. It is concluded, that after an energetically more demanding domain nucleation, domain wall motion can switch the majority of polarization in Al1-xScxN. As a consequence, the presence of initial domains reduces the coercive field in respect to unipolar films.
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Submitted 26 October, 2023;
originally announced October 2023.
In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V
Authors:
Georg Schönweger,
Niklas Wolff,
Md Redwanul Islam,
Maike Gremmel,
Adrian Petraru,
Lorenz Kienle,
Hermann Kohlstedt,
Simon Fichtner
Abstract:
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics of sub-5 nm thin Al$_{0.74}$Sc$_{0.26}$N films grown on Pt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, we focus on…
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Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics of sub-5 nm thin Al$_{0.74}$Sc$_{0.26}$N films grown on Pt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, we focus on the following major achievements compared to previously available wurtzite-type ferroelectrics: 1) Record low switching voltages down to 1 V are achieved, which is in a range that can be supplied by standard on-chip voltage sources. 2) Compared to the previously investigated deposition of thinnest Al$_{1-x}$Sc$_x$N films on epitaxial templates, a significantly larger coercive field to breakdown field ratio is observed for Al$_{0.74}$Sc$_{0.26}$N films grown on silicon substrates, the technologically most relevant substrate-type. 3) The formation of true ferroelectric domains in wurtzite-type materials is for the first time demonstrated on the atomic scale by scanning transmission electron microscopy investigations of a sub-5 nm thin partially switched film. The direct observation of inversion domain boundaries within single nm-sized grains supports the theory of a gradual domain-wall motion limited switching process in wurtzite-type ferroelectrics. Ultimately, this should enable the analog switching necessary for mimicking neuromorphic concepts also in highly scaled devices.
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Submitted 6 April, 2023;
originally announced April 2023.
