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Nanoscale thermal control of a single living cell enabled by diamond heater-thermometer
Authors:
Alexey M. Romshin,
Vadim Zeeb,
Evgenii Glushkov,
Aleksandra Radenovic,
Andrey G. Sinogeikin,
Igor I. Vlasov
Abstract:
We report a new approach to controllable thermal stimulation of a single living cell and its compartments. The technique is based on the use of a single polycrystalline diamond particle containing silicon-vacancy (SiV) color centers. Due to the presence of amorphous carbon at its intercrystalline boundaries, such a particle is an efficient light absorber and becomes a local heat source when illumi…
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We report a new approach to controllable thermal stimulation of a single living cell and its compartments. The technique is based on the use of a single polycrystalline diamond particle containing silicon-vacancy (SiV) color centers. Due to the presence of amorphous carbon at its intercrystalline boundaries, such a particle is an efficient light absorber and becomes a local heat source when illuminated by a laser. Furthermore, the temperature of such a local heater is tracked by the spectral shift of the zero-phonon line of SiV centers [2]. Thus, the diamond particle acts simultaneously as a heater and a thermometer. In the current work, we demonstrate the ability of such a Diamond Heater-Thermometer (DHT) to locally alter the temperature, one of the numerous parameters that play a decisive role for the living organisms at the nanoscale. In particular, we show that the local heating of 11-12 °C relative to the ambient temperature (22 °C) next to individual HeLa cells and neurons, isolated from the mouse hippocampus, leads to a change in the intracellular distribution of the concentration of free calcium ions. For individual HeLa cells, a long-term (about 30 s) increase in the integral intensity of Fluo-4 NW fluorescence by about three times is observed, which characterizes an increase in the [Ca2+]cyt concentration of free calcium in the cytoplasm. Heating near mouse hippocampal neurons also caused a calcium surge - an increase in the intensity of Fluo-4 NW fluorescence by 30% and a duration of ~0.4 ms.
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Submitted 30 December, 2022; v1 submitted 29 June, 2022;
originally announced June 2022.
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Liquid-activated quantum emission from pristine hexagonal boron nitride for nanofluidic sensing
Authors:
Nathan Ronceray,
Yi You,
Evgenii Glushkov,
Martina Lihter,
Benjamin Rehl,
Tzu-Heng Chen,
Gwang-Hyeon Nam,
Fanny Borza,
Kenji Watanabe,
Takashi Taniguchi,
Sylvie Roke,
Ashok Keerthi,
Jean Comtet,
Boya Radha,
Aleksandra Radenovic
Abstract:
Liquids confined down to the atomic scale can show radically new properties. However, only indirect and ensemble measurements operate in such extreme confinement, calling for novel optical approaches enabling direct imaging at the molecular level. Here, we harness fluorescence originating from single-photon emitters at the surface of hexagonal boron nitride (hBN) for molecular imaging and sensing…
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Liquids confined down to the atomic scale can show radically new properties. However, only indirect and ensemble measurements operate in such extreme confinement, calling for novel optical approaches enabling direct imaging at the molecular level. Here, we harness fluorescence originating from single-photon emitters at the surface of hexagonal boron nitride (hBN) for molecular imaging and sensing in nanometrically confined liquids. The emission originates from the chemisorption of organic solvent molecules onto native surface defects, revealing single-molecule dynamics at the interface through spatially correlated activation of neighboring defects. Emitter spectra further offer a direct readout of local dielectric properties, unveiling increasing dielectric order under nanometer-scale confinement. Liquid-activated native hBN defects bridge the gap between solid-state nanophotonics and nanofluidics, opening new avenues for nanoscale sensing and optofluidics.
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Submitted 22 August, 2023; v1 submitted 13 April, 2022;
originally announced April 2022.
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Engineering optically active defects in hexagonal boron nitride using focused ion beam and water
Authors:
Evgenii Glushkov,
Michal Macha,
Esther Rath,
Vytautas Navikas,
Nathan Ronceray,
Cheol Yeon Cheon,
Ahmed Aqeel,
Ahmet Avsar,
Kenji Watanabe,
Takashi Taniguchi,
Ivan Shorubalko,
Andras Kis,
Georg Fantner,
Aleksandra Radenovic
Abstract:
Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and ap…
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Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and applications in hybrid devices. Recently, focused ion beam (FIB) systems proved to be useful to engineer several types of spatially-defined emitters with various structural and photophysical properties. Here we systematically explore the physical processes leading to the creation of optically-active defects in hBN using FIB, and find that beam-substrate interaction plays a key role in the formation of defects. These findings are confirmed using transmission electron microscopy that reveals local mechanical deterioration of the hBN layers and local amorphization of ion beam irradiated hBN. Additionally, we show that upon exposure to water, amorphized hBN undergoes a structural and optical transition between two defect types with distinctive emission properties. Moreover, using super-resolution optical microscopy combined with atomic force microscopy, we pinpoint the exact location of emitters within the defect sites, confirming the role of defected edges as primary sources of fluorescent emission. This lays the foundation for FIB-assisted engineering of optically-active defects in hBN with high spatial and spectral control for applications ranging from integrated photonics, to quantum sensing to nanofluidics.
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Submitted 5 July, 2021;
originally announced July 2021.
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Direct growth of hexagonal boron nitride on photonic chips for high-throughput characterization
Authors:
Evgenii Glushkov,
Noah Mendelson,
Andrey Chernev,
Ritika Ritika,
Martina Lihter,
Reza R. Zamani,
Jean Comtet,
Vytautas Navikas,
Igor Aharonovich,
Aleksandra Radenovic
Abstract:
Adapting optical microscopy methods for nanoscale characterization of defects in two-dimensional (2D) materials is a vital step for photonic on-chip devices. To increase the analysis throughput, waveguide-based on-chip imaging platforms have been recently developed. Their inherent disadvantage, however, is the necessity to transfer the 2D material from the growth substrate to the imaging chip whic…
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Adapting optical microscopy methods for nanoscale characterization of defects in two-dimensional (2D) materials is a vital step for photonic on-chip devices. To increase the analysis throughput, waveguide-based on-chip imaging platforms have been recently developed. Their inherent disadvantage, however, is the necessity to transfer the 2D material from the growth substrate to the imaging chip which introduces contamination, potentially altering the characterization results. Here we present a unique approach to circumvent these shortfalls by directly growing a widely-used 2D material (hexagonal boron nitride, hBN) on silicon nitride chips, and optically characterizing the defects in the intact as-grown material. We compare the direct growth approach to the standard wet transfer method, and confirm the clear advantages of the direct growth. While demonstrated with hBN in the current work, the method is easily extendable to other 2D materials.
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Submitted 29 March, 2021;
originally announced March 2021.
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Anomalous interfacial dynamics of single proton charges in binary aqueous solutions
Authors:
Jean Comtet,
Archith Rayabharam,
Evgenii Glushkov,
Miao Zhang,
Avsar Ahmet,
Kenji Watanabe,
Takashi Taniguchi,
Narayana R Aluru,
Aleksandra Radenovic
Abstract:
Understanding the dynamics of charge exchange between a solid surface and a liquid is fundamental to various situations, ranging from nanofiltration to catalysis and electrochemistry. Charge transfer is ultimately determined by physicochemical processes (surface group dissociation, ion adsorption, etc...) occurring in the few layers of molecules at the interface between the solid and the liquid. U…
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Understanding the dynamics of charge exchange between a solid surface and a liquid is fundamental to various situations, ranging from nanofiltration to catalysis and electrochemistry. Charge transfer is ultimately determined by physicochemical processes (surface group dissociation, ion adsorption, etc...) occurring in the few layers of molecules at the interface between the solid and the liquid. Unfortunately, these processes remain largely uncharted due to the experimental challenges in probing interfacial charge dynamics with sufficiently high spatial and temporal resolution. Here, we resolve at the single-charge scale, the dynamics of proton charges at the interface between an hBN crystal and binary mixtures of water and organic amphiphilic solvents (e.g. alcohol), evidencing a dramatic influence of solvation on interfacial dynamics. Our observations rely on the application of spectral Single Molecule Localization Microscopy (sSMLM) to two types of optically active defects at the hBN surface, which act as intrinsic optical markers for both surface protonation and interaction with apolar alkyl groups of the organic solvent. We use sSMLM to reveal interfacial proton charge transport as a succession of jumps between the titratable surface defects, mediated by the transport of the solvated proton charge along the solid/liquid interface. By changing the relative concentration of water in binary mixtures, we evidence a non-trivial effect on interfacial proton charge dynamics, leading at intermediate water concentration to an increased affinity of the proton charge to the solid surface, accompanied by an increased surface diffusivity. These measurements confirm the strong role of solvation on interfacial proton charge transport and establish the potential of single-molecule localization techniques to probe a wide range of dynamic processes at solid/liquid interfaces.
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Submitted 1 January, 2021;
originally announced January 2021.
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Direct observation of water mediated single proton transport between hBN surface defects
Authors:
Jean Comtet,
Benoit Grosjean,
Evgenii Glushkov,
Ahmet Avsar,
Kenji Watanabe,
Takashi Taniguchi,
Rodolphe Vuilleumier,
Marie-Laure Bocquet,
Aleksandra Radenovic
Abstract:
Aqueous proton transport at interfaces is ubiquitous and crucial for a number of fields, ranging from cellular transport and signaling, to catalysis and membrane science. However, due to their light mass, small size and high chemical reactivity, uncovering single proton surface transport at room temperature and in aqueous environment has so far remained out-of-reach of conventional atomic-scale su…
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Aqueous proton transport at interfaces is ubiquitous and crucial for a number of fields, ranging from cellular transport and signaling, to catalysis and membrane science. However, due to their light mass, small size and high chemical reactivity, uncovering single proton surface transport at room temperature and in aqueous environment has so far remained out-of-reach of conventional atomic-scale surface science techniques, such as STM. Here, we use single-molecule localization microscopy techniques to resolve optically the transport of individual excess protons at the interface of hexagonal boron nitride crystals and aqueous solutions at room temperature. Our label-free approach relies on the successive protonation and activation of optically active defects at the surface of the crystal allowing us to resolve interfacial proton transport at the single molecule scale with nanometric resolution and over micrometer range. Proton trajectories are revealed as a succession of jumps between proton-binding defects, mediated by interfacial water. We demonstrate unexpected interfacial proton mobility under illumination, limited by proton desorption from individual defects. The proposed mechanism is supported by ab initio molecular dynamics simulations of defected and pristine hBN/water interface. Our observations provide direct experimental evidence at the single molecule scale that interfacial water provides a preferential pathway for lateral proton transport. Our findings have fundamental and general implications for water-mediated molecular charge transport at interfaces.
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Submitted 19 December, 2019; v1 submitted 21 June, 2019;
originally announced June 2019.
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Wide-field spectral super-resolution mapping of optically active defects in hBN
Authors:
Jean Comtet,
Evgenii Glushkov,
Vytautas Navikas,
Jiandong Feng,
Vitaliy Babenko,
Stephan Hofmann,
Kenji Watanabe,
Takashi Taniguchi,
Aleksandra Radenovic
Abstract:
Point defects can have significant impacts on the mechanical, electronic and optical properties of materials. The development of robust, multidimensional, high-throughput and large-scale characterization techniques of defects is thus crucial, from the establishment of integrated nanophotonic technologies to material growth optimization. Here, we demonstrate the potential of wide-field spectral sin…
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Point defects can have significant impacts on the mechanical, electronic and optical properties of materials. The development of robust, multidimensional, high-throughput and large-scale characterization techniques of defects is thus crucial, from the establishment of integrated nanophotonic technologies to material growth optimization. Here, we demonstrate the potential of wide-field spectral single-molecule localization microscopy (spectral SMLM) for the determination of ensemble spectral properties, as well as characterization of spatial, spectral and temporal dynamics of single defects in CVD-grown and irradiated exfoliated hexagonal boron-nitride (hBN) materials. We characterize the heterogeneous spectral response of our samples, and identify at least two types of defects in CVD-grown materials, while irradiated exfoliated flakes show predominantly only one type of defect. We analyze the blinking kinetics and spectral emission for each type of defects, and discuss their implications with respect to the observed spectral heterogeneity of our samples. Our study shows the potential of wide-field spectral SMLM techniques in material science and paves the way towards quantitative multidimensional mapping of defect properties.
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Submitted 18 March, 2019; v1 submitted 21 January, 2019;
originally announced January 2019.
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Resistive method for measuring the disintegration speed of Prince Rupert's drops
Authors:
Daria Gusenkova,
Mark Bochkov,
Evgenii Glushkov,
Julia Zotova,
S. N. Zhabin
Abstract:
We have successfully applied the resistance grid technique to measure the disintegration speed in special type of glass objects, widely known as Prince Rupert's drops. We use a digital oscilloscope and a simple electrical circuit, glued to the surface of the drops, to detect the voltage changes, corresponding to the breaks in the specific parts of the drops. The results obtained using this method…
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We have successfully applied the resistance grid technique to measure the disintegration speed in special type of glass objects, widely known as Prince Rupert's drops. We use a digital oscilloscope and a simple electrical circuit, glued to the surface of the drops, to detect the voltage changes, corresponding to the breaks in the specific parts of the drops. The results obtained using this method are in good qualitative and quantitative agreement with theoretical predictions and previously published data. Moreover, the proposed experimental setup doesn't include any expensive equipment (such as a high-speed camera) and can therefore be widely used in high schools and universities.
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Submitted 18 February, 2016;
originally announced February 2016.
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Deriving Entropic Inequalities for Two Coupled Superconducting Circuits
Authors:
Evgenii Glushkov,
Anastasiia Glushkova,
V. I. Man'ko
Abstract:
We discuss the known construction of two interacting superconducting circuits, based on Josephson junctions, that can be precisely engineered and easily controlled. In particular, we use the parametric excitation of two circuits, realized by an instant change of the qubit coupling, to study entropic and information properties of the density matrix of the composite system. The density matrix is obt…
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We discuss the known construction of two interacting superconducting circuits, based on Josephson junctions, that can be precisely engineered and easily controlled. In particular, we use the parametric excitation of two circuits, realized by an instant change of the qubit coupling, to study entropic and information properties of the density matrix of the composite system. The density matrix is obtained from the initial thermal state and is then analyzed in the approximation of small perturbation parameter and sufficiently low temperature. We also check the subadditivity condition for this system both for von Neumann and deformed entropies and look at the dependance of mutual information on the temperature of the system. Finally, we discuss the applicability of this approach to describe such system of two coupled superconducting qubits as harmonic oscillators with limited Hilbert space.
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Submitted 25 May, 2016; v1 submitted 14 September, 2015;
originally announced September 2015.
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On Testing Entropic Inequalities for Superconducting Qudit
Authors:
Evgenii Glushkov,
Anastasiia Glushkova,
V. I. Man'ko
Abstract:
The aim of this work is to verify the new entropic and information inequalities for non-composite systems using experimental $5 \times 5$ density matrix of the qudit state, measured by the tomographic method in a multi-level superconducting circuit. These inequalities are well-known for bipartite and tripartite systems, but have never been tested for superconducting qudits. Entropic inequalities c…
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The aim of this work is to verify the new entropic and information inequalities for non-composite systems using experimental $5 \times 5$ density matrix of the qudit state, measured by the tomographic method in a multi-level superconducting circuit. These inequalities are well-known for bipartite and tripartite systems, but have never been tested for superconducting qudits. Entropic inequalities can also be used to evaluate the accuracy of experimental data and the value of mutual information, deduced from them, may charachterize correlations between different degrees of freedom in a noncomposite system.
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Submitted 20 May, 2015; v1 submitted 30 April, 2015;
originally announced April 2015.
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Broadband Sample Holder for Microwave Spectroscopy of Superconducting Qubits
Authors:
A. S. Averkin,
A. Karpov,
K. Shulga,
E. Glushkov,
N. Abramov,
U. Huebner,
E. Ilichev,
A. V. Ustinov
Abstract:
We present a practical design and implementation of a broadband sample holder suitable for microwave experiments with superconducting integrated circuits at millikelvin temperatures. Proposed design can be easily integrated in standard dilution cryostats, has flat pass band response in a frequency range from 0 to 32 GHz, allowing the RF testing of the samples with substrate size up to 4x4 mm. The…
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We present a practical design and implementation of a broadband sample holder suitable for microwave experiments with superconducting integrated circuits at millikelvin temperatures. Proposed design can be easily integrated in standard dilution cryostats, has flat pass band response in a frequency range from 0 to 32 GHz, allowing the RF testing of the samples with substrate size up to 4x4 mm. The parasitic higher modes interference in the holder structure is analyzed and prevented via design considerations. The developed setup can be used for characterization of superconducting parametric amplifiers, bolometers and qubits. We tested the designed sample holder by characterizing of a superconducting flux qubit at 20 mK temperature.
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Submitted 20 July, 2014;
originally announced July 2014.
