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In situ Etching of \b{eta}-Ga2O3 using tert-Butyl Chloride in an MOCVD System
Authors:
Cameron A. Gorsak,
Henry J. Bowman,
Katie R. Gann,
Kathleen T. Smith,
Jacob Steele,
Debdeep Jena,
Darrell G. Schlom,
Huili,
Xing,
Michael O. Thompson,
Hari P. Nair
Abstract:
In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successful etching of both heteroepitaxial (-201)-oriented and homoepitaxial (010)-oriented \b{eta}-Ga2O3 films over a wide range of substrate temperature, TBCl molar flows, and reactor pressures. We identify that the likely etch…
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In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successful etching of both heteroepitaxial (-201)-oriented and homoepitaxial (010)-oriented \b{eta}-Ga2O3 films over a wide range of substrate temperature, TBCl molar flows, and reactor pressures. We identify that the likely etchant is HCl (g) formed by the pyrolysis of TBCl in the hydrodynamic boundary layer above the substrate. The temperature dependence of the etch rate reveals two distinct regimes characterized by markedly different apparent activation energies. The extracted apparent activation energies suggest that at temperatures below ~800 °C the etch rate is likely limited by desorption of etch products, while at higher substrate temperatures chemisorption of HCl limits the etch rate. The relative etch rates of heteroepitaxial (-201) and homoepitaxial (010) \b{eta}-Ga2O3 were observed to scale by the ratio of the surface energies indicating an anisotropic etch. For (010) homoepitaxial films, relatively smooth post-etch surface morphology was achieved by tuning the etching parameters.
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Submitted 2 August, 2024;
originally announced August 2024.
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Silicon Implantation and Annealing in $β$-Ga$_2$O$_3$: Role of Ambient, Temperature, and Time
Authors:
K. R. Gann,
N. Pieczulewski1,
C. A. Gorsak,
K. Heinselman,
T. J. Asel,
B. A. Noesges,
K. T. Smith,
D. M. Dryden,
H. G. Xing,
H. P. Nair,
D. A. Muller,
M. O. Thompson
Abstract:
Optimizing thermal anneals of Si-implanted $β$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $β$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) wi…
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Optimizing thermal anneals of Si-implanted $β$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $β$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) with contact resistances below 0.29 $Ω$-mm. Homoepitaxial $β$-Ga$_2$O$_3$ films, grown by plasma assisted MBE on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5x10$^{18}$, 5x10$^{19}$, and 1x10$^{20}$ cm$^{-3}$. Anneals were performed in a UHV-compatible quartz furnace at 1 bar with well-controlled gas composition. To maintain $β$-Ga$_2$O$_3$ stability, $p_{O2}$ must be greater than 10$^{-9}$ bar. Anneals up to $p_{O2}$ = 1 bar achieve full activation at 5x10$^{18}$ cm$^{-3}$, while 5x10$^{19}$ cm$^{-3}$ must be annealed with $p_{O2}$ <10$^{-4}$ bar and 1x10$^{20}$ cm$^{-3}$ requires $p_{O2}$ <10$^{-6}$ bar. Water vapor prevents activation and must be maintained below 10$^{-8}$ bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperature up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 minutes with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5x10$^{19}$ cm$^{-3}$ and occurs rapidly at 1x10$^{20}$ cm$^{-3}$. RBS (channeling) suggests damage recovery is seeded from remnant aligned $β$-Ga$_2$O$_3$ that remains after implantation; this conclusion is also supported by STEM showing retention of the $β$-phase with inclusions that resemble the $γ$-phase.
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Submitted 1 November, 2023;
originally announced November 2023.
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Optical Identification of Materials Transformations in Oxide Thin Films
Authors:
Duncan R. Sutherland,
Aine Boyer Connolly,
Maximilian Amsler,
Ming-Chiang Chang,
Katie Rose Gann,
Vidit Gupta,
Sebastian Ament,
Dan Guevarra,
John M. Gregoire,
Carla P. Gomes,
R. B. van Dover,
Michael O. Thompson
Abstract:
Recent advances in high-throughput experimentation for combinatorial studies have accelerated the discovery and analysis of materials across a wide range of compositions and synthesis conditions. However, many of the more powerful characterization methods are limited by speed, cost, availability, and/or resolution. To make efficient use of these methods, there is value in developing approaches for…
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Recent advances in high-throughput experimentation for combinatorial studies have accelerated the discovery and analysis of materials across a wide range of compositions and synthesis conditions. However, many of the more powerful characterization methods are limited by speed, cost, availability, and/or resolution. To make efficient use of these methods, there is value in developing approaches for identifying critical compositions and conditions to be used as a-priori knowledge for follow-up characterization with high-precision techniques, such as micron-scale synchrotron based X-ray diffraction (XRD). Here we demonstrate the use of optical microscopy and reflectance spectroscopy to identify likely phase-change boundaries in thin film libraries. These methods are used to delineate possible metastable phase boundaries following lateral-gradient Laser Spike Annealing (lg-LSA) of oxide materials. The set of boundaries are then compared with definitive determinations of structural transformations obtained using high-resolution XRD. We demonstrate that the optical methods detect more than 95% of the structural transformations in a composition-gradient La-Mn-O library and a Ga$_2$O$_3$ sample, both subject to an extensive set of lg-LSA anneals. Our results provide quantitative support for the value of optically-detected transformations as a priori data to guide subsequent structural characterization, ultimately accelerating and enhancing the efficient implementation of $μ$m-resolution XRD experiments.
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Submitted 14 August, 2020;
originally announced August 2020.
