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Experimental observation of metallic states with different dimensionality in a quasi-1D charge density wave compound
Authors:
P. Rezende-Gonçalves,
M. Thees,
J. Rojas Castillo,
D. Silvera-Vega,
R. L. Bouwmeester,
E. David,
A. Antezak,
A. J. Thakur,
F. Fortuna,
P. Le Fèvre,
M. Rosmus,
N. Olszowska,
R. Magalhães-Paniago,
A. C. Garcia-Castro,
P. Giraldo-Gallo,
E. Frantzeskakis,
A. F. Santander-Syro
Abstract:
TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have r…
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TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have reported metallic behavior with a resistivity plateau at temperatures lower than 10 K. In this paper, we study the electronic structure of TaTe$_4$ using a combination of high-resolution angle-resolved photoemission spectroscopy and density functional calculations. Our results reveal the existence of the long-sought metallic states. These states exhibit mixed dimensionality, while some of them might have potential topological properties.
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Submitted 28 April, 2023;
originally announced May 2023.
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Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V$_2$O$_3$
Authors:
Maximilian Thees,
Min-Han Lee,
Rosa Luca Bouwmeester,
Pedro H. Rezende-Gonçalves,
Emma David,
Alexandre Zimmers,
Emmanouil Frantzeskakis,
Nicolas M. Vargas,
Yoav Kalcheim,
Patrick Le Fèvre,
Koji Horiba,
Hiroshi Kumigashira,
Silke Biermann,
Juan Trastoy,
Marcelo J. Rozenberg,
Ivan K. Schuller,
Andrés F. Santander-Syro
Abstract:
In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and mome…
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In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V$_2$O$_3$ the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level.
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Submitted 9 July, 2022;
originally announced July 2022.
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From hidden-order to antiferromagnetism: electronic structure changes in Fe-doped URu$_{2}$Si$_{2}$
Authors:
Emmanouil Frantzeskakis,
Ji Dai,
Cédric Bareille,
Tobias C. Rödel,
Monika Güttler,
Sheng Ran,
Noravee Kanchanavatee,
Kevin Huang,
Naveen Pouse,
Christian T. Wolowiec,
Emile D. L. Rienks,
Pascal Lejay,
Franck Fortuna,
M. Brian Maple,
Andrés F. Santander-Syro
Abstract:
In matter, any spontaneous symmetry breaking induces a phase transition characterized by an order parameter, such as the magnetization vector in ferromagnets, or a macroscopic many-electron wave-function in superconductors. Phase transitions with unknown order parameter are rare but extremely appealing, as they may lead to novel physics. An emblematic, and still unsolved, example is the transition…
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In matter, any spontaneous symmetry breaking induces a phase transition characterized by an order parameter, such as the magnetization vector in ferromagnets, or a macroscopic many-electron wave-function in superconductors. Phase transitions with unknown order parameter are rare but extremely appealing, as they may lead to novel physics. An emblematic, and still unsolved, example is the transition of the heavy fermion compound URu$_2$Si$_2$ (URS) into the so-called hidden-order (HO) phase when the temperature drops below $T_0 = 17.5$K. Here we show that the interaction between the heavy fermion and the conduction band states near the Fermi level has a key role in the emergence of the HO phase. Using angle resolved photoemission spectroscopy, we find that while the Fermi surfaces of the HO and of a neighboring antiferromagnetic (AFM) phase of well-defined order parameter have the same topography, they differ in the size of some, but not all, of their electron pockets. Such a non-rigid change of the electronic structure indicates that a change in the interaction strength between states near the Fermi level is a crucial ingredient for the HO-to-AFM phase transition.
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Submitted 8 July, 2021;
originally announced July 2021.
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Experimental observation and spin texture of Dirac node arcs in tetradymite topological metals
Authors:
J. Dai,
E. Frantzeskakis,
N. Aryal,
K. -W. Chen,
F. Fortuna,
J. E. Rault,
P. Le Fèvre,
L. Balicas,
K. Miyamoto,
T. Okuda,
E. Manousakis,
R. E. Baumbach,
A. F. Santander-Syro
Abstract:
We report the observation of a non-trivial spin texture in Dirac node arcs, novel topological objects formed when Dirac cones of massless particles extend along an open one-dimensional line in momentum space. We find that such states are present in all the compounds of the tetradymite M$_2$Te$_2$X family (M$=$Ti, Zr or Hf and X$=$P or As), regardless of the weak or strong character of the topologi…
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We report the observation of a non-trivial spin texture in Dirac node arcs, novel topological objects formed when Dirac cones of massless particles extend along an open one-dimensional line in momentum space. We find that such states are present in all the compounds of the tetradymite M$_2$Te$_2$X family (M$=$Ti, Zr or Hf and X$=$P or As), regardless of the weak or strong character of the topological invariant. The Dirac node arcs in tetradymites are thus the simplest possible, textbook example, of a type-I Dirac system with a single spin-polarized node arc.
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Submitted 16 May, 2021;
originally announced May 2021.
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Universal Fabrication of Two-Dimensional Electron Systems in Functional Oxides
Authors:
Tobias Chris Rödel,
Franck Fortuna,
Shamashis Sengupta,
Emmanouil Frantzeskakis,
Patrick Le Fèvre,
François Bertran,
Bernard Mercey,
Sylvia Matzen,
Guillaume Agnus,
Thomas Maroutian,
Philippe Lecoeur,
Andrés Felipe~Santander-Syro
Abstract:
Two-dimensional electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO$_3$-based heterostructures, are hampered by the need of growing complex oxide over-layers thicker than 2~nm using evolved techniques. This work shows that thermal deposition of a monolayer of an elementary reducing agent suffices to create 2DESs…
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Two-dimensional electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO$_3$-based heterostructures, are hampered by the need of growing complex oxide over-layers thicker than 2~nm using evolved techniques. This work shows that thermal deposition of a monolayer of an elementary reducing agent suffices to create 2DESs in numerous oxides.
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Submitted 15 February, 2021;
originally announced February 2021.
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Quantum interference effects of out-of-plane confinement on two-dimensional electron systems in oxides
Authors:
A. F. Santander-Syro,
J. Dai,
T. C. Rödel,
E. Frantzeskakis,
F. Fortuna,
R. Weht,
M. J. Rozenberg
Abstract:
It was recently discovered that a conductive, metallic state is formed on the surface of some insulating oxides. Firstly observed on SrTiO$_3$(001), it was then found in other compounds as diverse as anatase TiO$_2$, KTaO$_3$, BaTiO$_3$, ZnO, and also on different surfaces of SrTiO$_3$ (or other oxides) with different symmetries. The spatial extension of the wave function of this electronic state…
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It was recently discovered that a conductive, metallic state is formed on the surface of some insulating oxides. Firstly observed on SrTiO$_3$(001), it was then found in other compounds as diverse as anatase TiO$_2$, KTaO$_3$, BaTiO$_3$, ZnO, and also on different surfaces of SrTiO$_3$ (or other oxides) with different symmetries. The spatial extension of the wave function of this electronic state is of only a few atomic layers. Experiments indicate its existence is related to the presence of oxygen vacancies induced at or near the surface of the oxide. In this article we present a simplified model aimed at describing the effect of its small spatial extension on measurements of its 3D electronic structure by angular resolved photoemission spectroscopy (ARPES). For the sake of clarity, we base our discussion on a simple tight binding scheme plus a confining potential that is assumed to be induced by the oxygen vacancies. Our model parameters are, nevertheless, obtained from density functional calculations. With this methodology we can explain from a very simple concept of selective interference the "wobbling", i.e., the photoemission intensity modulation and/or apparent dispersion of the Fermi surface and spectra along the out-of-plane ($k_z$) direction, and the "mixed 2D/3D" characteristics observed in some experiments. We conclude that the critical model parameters for such an effect are the relative strength of the electronic hopping of each band and the height/width aspect ratio of the surface confining potential. By considering recent photoemission measurements under the light of our findings, we can get relevant information on the electronic wave functions and of the nature of the confining potential.
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Submitted 10 July, 2020;
originally announced July 2020.
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Tunable two-dimensional electron system at the (110) surface of SnO$_2$
Authors:
J. Dai,
E. Frantzeskakis,
F. Fortuna,
P. Lömker,
R. Yukawa,
M. Thees,
S. Sengupta,
P. Le Fèvre,
F. Bertran,
J. E. Rault,
K. Horiba,
M. Müller,
H. Kumigashira,
A. F. Santander-Syro
Abstract:
We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalyt…
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We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of $n$-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band.
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Submitted 16 February, 2020;
originally announced February 2020.
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High-density two-dimensional electron system induced by oxygen vacancies in ZnO
Authors:
T. C. Rödel,
J. Dai,
F. Fortuna,
E. Frantzeskakis,
P. Le Fèvre,
F. Bertran,
M. Kobayashi,
R. Yukawa,
T. Mitsuhashi,
M. Kitamura,
K. Horiba,
H. Kumigashira,
A. F. Santander-Syro
Abstract:
We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the…
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We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the 2DES is up to two orders of magnitude higher than those obtained in ZnO heterostructures. The 2DES shows two $s$-type subbands, that we compare to the $d$-like 2DESs in titanates, with clear signatures of many-body interactions that we analyze through a self-consistent extraction of the system self-energy and a modeling as a coupling of a 2D Fermi liquid with a Debye distribution of phonons.
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Submitted 19 February, 2018;
originally announced February 2018.
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Two-dimensional electron system at the magnetically tunable EuO/SrTiO$_3$ interface
Authors:
Patrick Lömker,
Tobias C. Rödel,
Timm Gerber,
Franck Fortuna,
Emmanouil Frantzeskakis,
Patrick Le Fèvre,
François Bertran,
Martina Müller,
Andrés F. Santander-Syro
Abstract:
We create a two-dimensional electron system (2DES) at the interface between EuO, a ferromagnetic insulator, and SrTiO3, a transparent non-magnetic insulator considered the bedrock of oxide-based electronics. This is achieved by a controlled in-situ redox reaction between pure metallic Eu deposited at room temperature on the surface of SrTiO3, an innovative bottom-up approach that can be easily gen…
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We create a two-dimensional electron system (2DES) at the interface between EuO, a ferromagnetic insulator, and SrTiO3, a transparent non-magnetic insulator considered the bedrock of oxide-based electronics. This is achieved by a controlled in-situ redox reaction between pure metallic Eu deposited at room temperature on the surface of SrTiO3, an innovative bottom-up approach that can be easily generalized to other functional oxides and scaled to applications. Additionally, we find that the resulting EuO capping layer can be tuned from paramagnetic to ferromagnetic, depending on the layer thickness. These results demonstrate that the simple, novel technique of creating 2DESs in oxides by deposition of elementary reducing agents [T. C. Rödel et al., Adv. Mater. 28, 1976 (2016)] can be extended to simultaneously produce an active, e.g. magnetic, capping layer enabling the realization and control of additional functionalities in such oxide-based 2DESs.
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Submitted 13 December, 2017;
originally announced December 2017.
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Trigger of the ubiquitous surface band bending in 3D topological insulators
Authors:
E. Frantzeskakis,
S. V. Ramankutty,
N. de Jong,
Y. K. Huang,
Y. Pan,
A. Tytarenko,
M. Radovic,
N. C. Plumb,
M. Shi,
A. Varykhalov,
A. de Visser,
E. van Heumen,
M. S. Golden
Abstract:
The main scientific activity in the field of topological insulators (TIs) consists of determining their electronic structure by means of magneto-transport and electron spectroscopy with a view to devices based on topological transport. There is however a caveat in this approach. There are systematic experimental discrepancies on the electronic structure of the most pristine surfaces of TI single c…
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The main scientific activity in the field of topological insulators (TIs) consists of determining their electronic structure by means of magneto-transport and electron spectroscopy with a view to devices based on topological transport. There is however a caveat in this approach. There are systematic experimental discrepancies on the electronic structure of the most pristine surfaces of TI single crystals as determined by Shubnikov de Haas (SdH) oscillations and by Angle Resolved PhotoElectron Spectroscopy (ARPES). We identify intense ultraviolet illumination -that is inherent to an ARPES experiment- as the source for these experimental differences. We explicitly show that illumination is the key parameter, or in other words the trigger, for energetic shifts of electronic bands near the surface of a TI crystal. This finding revisits the common belief that surface decoration is the principal cause of surface band bending and explains why band bending is not a prime issue in the illumination-free magneto-transport studies. Our study further clarifies the role of illumination on the electronic band structure of TIs by revealing its dual effect: downward band bending on very small timescales followed by band flattening at large timescales. Our results therefore allow us to present and predict the complete evolution of the band structure of TIs in a typical ARPES experiment. By virtue of our findings, we pinpoint two alternatives of how to approach flat band conditions by means of photon-based techniques and we suggest a microscopic mechanism that can explain the underlying phenomena.
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Submitted 14 November, 2017;
originally announced November 2017.
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Converting topological insulators into topological metals within the tetradymite family
Authors:
K. -W. Chen,
N. Aryal,
J. Dai,
D. Graf,
S. Zhang,
S. Das,
P. Le Fevre,
F. Bertran,
R. Yukawa,
K. Horiba,
H. Kumigashira,
E. Frantzeskakis,
F. Fortuna,
L. Balicas,
A. F. Santander-Syro,
E. Manousakis,
R. E. Baumbach
Abstract:
We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries Bi$_2$(Se,Te)$_3$ by replacing one chalcogen ($Ch$) with a pnictogen ($Pn$) and Bi with the tetravalent transition metals $T$ $=$ Ti, Zr, or Hf. This imbalances the elec…
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We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries Bi$_2$(Se,Te)$_3$ by replacing one chalcogen ($Ch$) with a pnictogen ($Pn$) and Bi with the tetravalent transition metals $T$ $=$ Ti, Zr, or Hf. This imbalances the electron count and results in layered metals characterized by relatively high carrier mobilities and bulk two-dimensional Fermi surfaces whose topography is well-described by first principles calculations. Intriguingly, slab electronic structure calculations predict Dirac-like surface states. In contrast to Bi$_2$Se$_3$, where the surface Dirac bands are at the $Γ-$point, for (Zr,Hf)$_2$Te$_2$(P,As) there are Dirac cones of strong topological character around both the $\bar Γ$- and $\bar {M}$-points which are above and below the Fermi energy, respectively. For Ti$_2$Te$_2$P the surface state is predicted to exist only around the $\bar {M}$-point. In agreement with these predictions, the surface states that are located below the Fermi energy are observed by angle resolved photoemission spectroscopy measurements, revealing that they coexist with the bulk metallic state. Thus, this family of materials provides a foundation upon which to develop novel phenomena that exploit both the bulk and surface states (e.g., topological superconductivity).
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Submitted 11 November, 2017;
originally announced November 2017.
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Emerging one-dimensionality from self-organization of electrons in NbSe$_3$
Authors:
M. A. Valbuena,
P. Chudzinski,
S. Pons,
S. Conejeros,
P. Alemany,
E. Canadell,
H. Berger,
E. Frantzeskakis,
J. Avila,
M. C. Asensio,
T. Giamarchi,
M. Grioni
Abstract:
Materials where the electron filling is close to commensurate filling provide one of the great challenges in materials science. Several proposals of unconventional orderings, where the electronic liquid self-organizes into components with distinct properties, were recently put forward, in particular in cuprates and pnictides where electronic nematic orders have been observed. The electrons self-or…
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Materials where the electron filling is close to commensurate filling provide one of the great challenges in materials science. Several proposals of unconventional orderings, where the electronic liquid self-organizes into components with distinct properties, were recently put forward, in particular in cuprates and pnictides where electronic nematic orders have been observed. The electrons self-organization is expected to yield complex intra and inter unit cell patterns, and a reduction of dimensionality. Nevertheless, an unambiguous experimental proof of such complex orders, namely the direct observation of distinct dispersions, is still missing. Here we report a Nano Angle Resolved Photo-emission Spectroscopy (Nano-ARPES) study of NbSe$_3$, a material that has been considered a paradigm of charge order. The new data (Fig.1) invalidate the canonical picture of imperfect nesting and reveals the emergence of a novel order. The electrons self-organization uncovers the one-dimensional (1D) physics hidden in a material which naively should be the most 3D of all columnar chalcogenides.
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Submitted 14 December, 2016;
originally announced December 2016.
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2D surprises at the surface of 3D materials: confined electron systems in transition metal oxides
Authors:
Emmanouil Frantzeskakis,
Tobias Chris Rödel,
Franck Fortuna,
Andrés Felipe Santander-Syro
Abstract:
The scope of this article is to review the state-of-the-art in the field of confined electron systems generated at the bare surfaces of transition metal oxides (TMOs). This scientific field is a prime example of a domain where two-dimensional physics and photoemission-based spectroscopic techniques have together set up the development of the story. The discovery of a high-mobility two-dimensional…
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The scope of this article is to review the state-of-the-art in the field of confined electron systems generated at the bare surfaces of transition metal oxides (TMOs). This scientific field is a prime example of a domain where two-dimensional physics and photoemission-based spectroscopic techniques have together set up the development of the story. The discovery of a high-mobility two-dimensional electron system (2DES) at interfaces of transition metal oxides has attracted an immense scientific interest due to new opportunities opened in the emerging field of oxide electronics. The subsequent paradigm shift from interfaces to the bare surfaces of TMOs made the confined electron system accessible to surface-sensitive spectroscopic techniques and this new era is the focus of the present article. We describe how results by means of Angle-Resolved Photoemission Spectroscopy (ARPES) establish the presence of confined electron carriers at the bare surface of SrTiO$_{3}$(100), which exhibit complex physics phenomena such as orbital ordering, electron-phonon interactions and spin splitting. The key element behind the 2DES generation is oxygen vacancies. Moreover, we review the experimental evidence on the generation of 2DESs on surfaces with different orientation, as well as on different TMO substrates. The electronic structure of the confined electron system responds to such changes, thereby providing external means for engineering its properties. Finally, we identify new directions for future research by introducing a device-friendly fabrication protocol for the generation of 2DESs on TMO surfaces.
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Submitted 11 October, 2016;
originally announced October 2016.
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Gold-induced nanowires on the Ge(100) surface yield a 2D, and not a 1D electronic structure
Authors:
Nick de Jong,
René Heimbuch,
Sebas Eliens,
Steef Smit,
Emmanouil Frantzeskakis,
Jean-Sébastien Caux,
Harold J. W. Zandvliet,
Mark S. Golden
Abstract:
Atomic nanowires on semiconductor surfaces induced by the adsorption of metallic atoms have attracted a lot of attention as possible hosts of the elusive, Tomonaga-Luttinger liquid. The Au/Ge(100) system in particular is the subject of controversy as to whether the Au-induced nanowires do indeed host exotic, 1D metallic states. We report on a thorough study of the electronic properties of high qua…
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Atomic nanowires on semiconductor surfaces induced by the adsorption of metallic atoms have attracted a lot of attention as possible hosts of the elusive, Tomonaga-Luttinger liquid. The Au/Ge(100) system in particular is the subject of controversy as to whether the Au-induced nanowires do indeed host exotic, 1D metallic states. We report on a thorough study of the electronic properties of high quality nanowires formed at the Au/Ge(100) surface. High resolution ARPES data show the low-lying Au-induced electronic states to possess a dispersion relation that depends on two orthogonal directions in k-space. Comparison of the E(k$_x$,k$_y$) surface measured using ARPES to tight-binding calculations yields hopping parameters in the two different directions that differ by a factor of two. We find that the larger of the two hopping parameters corresponds, in fact, to the direction perpendicular to the nanowires (t$_{\perp}$). This, the topology of the $E$=$E_F$ contour in k$_{\||}$, and the fact that $t_{\||}$/$t_{\perp}\sim 0.5$ proves that the Au-induced electron pockets possess a 2D, closed Fermi surface, this firmly places the Au/Ge(100) nanowire system outside being a potential hosts of a Tomonaga-Luttinger liquid. We combine these ARPES data with STS measurements of the spatially-resolved electronic structure and find that the spatially straight conduction channels observed up to energies of order one electron volt below the Fermi level do not originate from the Au-induced states seen in the ARPES data. The former are more likely to be associated with bulk Ge states that are localized to the subsurface region. Despite our proof of the 2D nature of the Au-induced nanowire and sub-surface Ge-related states, an anomalous suppression of the density of states at the Fermi level is observed in both the STS and ARPES data, this phenomenon is discussed in the light of the effects of disorder.
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Submitted 20 April, 2016;
originally announced April 2016.
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Hubbard band or oxygen vacancy states in the correlated electron metal SrVO$_3$?
Authors:
S. Backes,
T. C. Rödel,
F. Fortuna,
E. Frantzeskakis,
P. Le Fèvre,
F. Bertran,
M. Kobayashi,
R. Yukawa,
T. Mitsuhashi,
M. Kitamura,
K. Horiba,
H. Kumigashira,
R. Saint-Martin,
A. Fouchet,
B. Berini,
Y. Dumont,
A. J. Kim,
F. Lechermann,
H. O. Jeschke,
M. J. Rozenberg,
R. Valentí,
A. F. Santander-Syro
Abstract:
We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously…
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We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously reported in this compound, raising questions on its previous interpretation. By a careful analysis of the dose dependent effects we succeed in disentangling the contributions coming from the oxygen vacancy states and from the lower Hubbard band. We obtain the intrinsic ARPES spectrum for the zero-vacancy limit, where a clear signal of a lower Hubbard band remains. We support our study by means of state-of-the-art ab initio calculations that include correlation effects and the presence of oxygen vacancies. Our results underscore the relevance of potential spurious states affecting ARPES experiments in correlated metals, which are associated to the ubiquitous oxygen vacancies as extensively reported in the context of a two-dimensional electron gas (2DEG) at the surface of insulating $d^0$ transition metal oxides.
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Submitted 22 February, 2016;
originally announced February 2016.
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Quantum oscillations of the topological surface states in low carrier concentration crystals of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$
Authors:
Y. Pan,
A. M. Nikitin,
D. Wu,
Y. K. Huang,
A. Puri,
S. Wiedmann,
U. Zeitler,
E. Frantzeskakis,
E. van Heumen,
M. S. Golden,
A. de Visser
Abstract:
We report a high-field magnetotransport study on selected low-carrier crystals of the topological insulator Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$. Monochromatic Shubnikov - de Haas (SdH) oscillations are observed at 4.2~K and their two-dimensional nature is confirmed by tilting the magnetic field with respect to the sample surface. With help of Lifshitz-Kosevich theory, important transport paramete…
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We report a high-field magnetotransport study on selected low-carrier crystals of the topological insulator Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$. Monochromatic Shubnikov - de Haas (SdH) oscillations are observed at 4.2~K and their two-dimensional nature is confirmed by tilting the magnetic field with respect to the sample surface. With help of Lifshitz-Kosevich theory, important transport parameters of the surface states are obtained, including the carrier density, cyclotron mass and mobility. For $(x,y)=(0.50,1.3)$ the Landau level plot is analyzed in terms of a model based on a topological surface state in the presence of a non-ideal linear dispersion relation and a Zeeman term with $g_s = 70$ or $-54$. Input parameters were taken from the electronic dispersion relation measured directly by angle resolved photoemission spectroscopy on crystals from the same batch. The Hall resistivity of the same crystal (thickness of 40~$μ$m) is analyzed in a two-band model, from which we conclude that the ratio of the surface conductance to the total conductance amounts to 32~\%.
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Submitted 25 November, 2015;
originally announced November 2015.
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Comparative study of rare earth hexaborides using high resolution angle-resolved photoemission
Authors:
Shyama V. Ramankutty,
Nick de Jong,
Ying-Kai Huang,
Berend Zwartsenberg,
Freek Massee,
Tran V. Bay,
Mark S. Golden,
Emmanouil Frantzeskakis
Abstract:
Strong electron correlations in rare earth hexaborides can give rise to a variety of interesting phenomena like ferromagnetism, Kondo hybridization, mixed valence, superconductivity and possibly topological characteristics. The theoretical prediction of topological properties in SmB$_{6}$ and YbB$_{6}$, has rekindled the scientific interest in the rare earth hexaborides, and high-resolution ARPES…
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Strong electron correlations in rare earth hexaborides can give rise to a variety of interesting phenomena like ferromagnetism, Kondo hybridization, mixed valence, superconductivity and possibly topological characteristics. The theoretical prediction of topological properties in SmB$_{6}$ and YbB$_{6}$, has rekindled the scientific interest in the rare earth hexaborides, and high-resolution ARPES has been playing a major role in the debate. The electronic band structure of the hexaborides contains the key to understand the origin of the different phenomena observed, and much can be learned by comparing the experimental data from different rare earth hexaborides. We have performed high-resolution ARPES on the (001) surfaces of YbB$_{6}$, CeB$_{6}$ and SmB$_{6}$. On the most basic level, the data show that the differences in the valence of the rare earth element are reflected in the experimental electronic band structure primarily as a rigid shift of the energy position of the metal 5$\textit{d}$ states with respect to the Fermi level. Although the overall shape of the $\textit{d}$-derived Fermi surface contours remains the same, we report differences in the dimensionality of these states between the compounds studied. Moreover, the spectroscopic fingerprint of the 4$\textit{f}$ states also reveals considerable differences that are related to their coherence and the strength of the $\textit{d}$-$\textit{f}$ hybridization. For the SmB$_6$ case, we use ARPES in combination with STM imaging and electron diffraction to reveal time dependent changes in the structural symmetry of the highly debated SmB$_{6}$(001) surface. All in all, our study highlights the suitability of electron spectroscopies like high-resolution ARPES to provide links between electronic structure and function in complex and correlated materials such as the rare earth hexaborides.
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Submitted 16 May, 2016; v1 submitted 19 June, 2015;
originally announced June 2015.
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Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb and Fe
Authors:
N. de Jong,
E. Frantzeskakis,
B. Zwartsenberg,
Y. K. Huang,
D. Wu,
P. Hlawenka,
J. Sánchez-Barriga,
A. Varykhalov,
E. van Heumen,
M. S. Golden
Abstract:
Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved and core-level photoemission. Fe, Nb and Ag were evaporated onto Bi1.5Sb0.5Te1.7Se1.3 (BSTS) surfaces both at room temperature and 38K. The coverage- and temperature-dependence of the adsorption and interfacial formation process have been investigated, highli…
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Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved and core-level photoemission. Fe, Nb and Ag were evaporated onto Bi1.5Sb0.5Te1.7Se1.3 (BSTS) surfaces both at room temperature and 38K. The coverage- and temperature-dependence of the adsorption and interfacial formation process have been investigated, highlighting the effects of the overlayer growth on the occupied electronic structure of the TI. For all coverages at room temperature and for those equivalent to less than 0.1 monolayer at low temperature all three metals lead to a downward shift of the TI's bands with respect to the Fermi level. At room temperature Ag appears to intercalate efficiently into the van der Waals gap of BSTS, accompanied by low-level substitution of the Te/Se atoms of the termination layer of the crystal. This Te/Se substitution with silver increases significantly for low temperature adsorption, and can even dominate the electrostatic environment of the Bi/Sb atoms in the BSTS near-surface region. On the other hand, Fe and Nb evaporants remain close to the termination layer of the crystal. On room temperature deposition, they initially substitute isoelectronically for Bi as a function of coverage, before substituting for Te/Se atoms. For low temperature deposition, Fe and Nb are too immobile for substitution processes and show a behaviour consistent with clustering on the surface. For both Ag and Fe/Nb, these differing adsorption pathways leads to the qualitatively similar and remarkable behavior for low temperature deposition that the chemical potential first moves upward (n-type dopant behavior) and then downward (p-type behavior) on increasing coverage.
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Submitted 27 August, 2015; v1 submitted 28 April, 2015;
originally announced April 2015.
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Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators
Authors:
Emmanouil Frantzeskakis,
Nick de Jong,
Berend Zwartsenberg,
Tran V. Bay,
Ying Kai Huang,
Shyama V. Ramankutty,
Alona Tytarenko,
Dong Wu,
Yu Pan,
Shira Hollanders,
Milan Radovic,
Nicholas C. Plumb,
Nan Xu,
Ming Shi,
Cosmin Lupulescu,
Tiberiu Arion,
Ruslan Ovsyannikov,
Andrei Varykhalov,
Wolfgang Eberhardt,
Anne de Visser,
Erik van Heumen,
Mark S. Golden
Abstract:
Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, stoichiometric variation and surface decoration are two effective approaches that have been followed. In ARPES experiments, both appr…
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Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, stoichiometric variation and surface decoration are two effective approaches that have been followed. In ARPES experiments, both approaches are seen to lead to electronic band structure changes. Such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases.The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of illumination a topological insulator surface has been exposed to under typical experimental ARPES conditions. Our results show that this new, third, knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous competition with the latter. The data clearly point towards surface photovoltage and photo-induced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature and photon exposure. These knobs can be used in conjunction to tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.
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Submitted 17 April, 2015;
originally announced April 2015.
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In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects
Authors:
P. Ngabonziza,
R. Heimbuch,
N. de Jong,
R. A. Klaassen,
M. P. Stehno,
M. Snelder,
A. Solmaz,
S. V. Ramankutty,
E. Frantzeskakis,
E. van Heumen,
G. Koster,
M. S. Golden,
H. J. W. Zandvliet,
A. Brinkman
Abstract:
Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achiev…
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Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counter doping. We observe that the surface morphology and electronic band structure of Bi2Te3 are not affected by in-vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.
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Submitted 26 May, 2015; v1 submitted 4 February, 2015;
originally announced February 2015.
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Micro-metric electronic patterning of a topological band structure using a photon beam
Authors:
Emmanouil Frantzeskakis,
Nick de Jong,
Berend Zwartsenberg,
Yingkai Huang,
Tran V. Bay,
Pieter Pronk,
Erik van Heumen,
Dong Wu,
Yu Pan,
Milan Radovic,
Nicholas C. Plumb,
Nan Xu,
Ming Shi,
Anne de Visser,
Mark S. Golden
Abstract:
In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulati…
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In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$ single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by `writing' micron-sized letters in the Dirac point energy of the system.
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Submitted 27 November, 2015; v1 submitted 2 December, 2014;
originally announced December 2014.
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Low carrier concentration crystals of the topological insulator Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$: a magnetotransport study
Authors:
Y. Pan,
D. Wu,
J. R. Angevaare,
H. Luigjes,
E. Frantzeskakis,
N. de Jong,
E. van Heumen,
T. V. Bay,
B. Zwartsenberg,
Y. K. Huang,
M. Snelder,
A. Brinkman,
M. S. Golden,
A. de Visser
Abstract:
In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthe…
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In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$ single crystals with compositions around $x = 0.5$ and $y = 1.3$. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to $1 μ$m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $α\simeq -1$ as expected for transport dominated by topological surface states.
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Submitted 7 May, 2015; v1 submitted 10 November, 2014;
originally announced November 2014.
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ARPES insights on the metallic states of YbB6(001): E(k) dispersion, temporal changes and spatial variation
Authors:
Emmanouil Frantzeskakis,
Nick de Jong,
Jiuxing Zhang,
Xin Zhang,
Zhi Li,
Chaolong Liang,
Yang Wang,
Andrei Varykhalov,
Yingkai Huang,
Mark S. Golden
Abstract:
We report high resolution Angle Resolved PhotoElectron Spectroscopy (ARPES) results on the (001) cleavage surface of YbB$_{6}$, a rare-earth compound which has been recently predicted to host surface electronic states with topological character. We observe two types of well-resolved metallic states, whose Fermi contours encircle the time-reversal invariant momenta of the YbB$_{6}$(001) surface Bri…
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We report high resolution Angle Resolved PhotoElectron Spectroscopy (ARPES) results on the (001) cleavage surface of YbB$_{6}$, a rare-earth compound which has been recently predicted to host surface electronic states with topological character. We observe two types of well-resolved metallic states, whose Fermi contours encircle the time-reversal invariant momenta of the YbB$_{6}$(001) surface Brillouin zone, and whose full (E,$k$)-dispersion relation can be measured wholly unmasked by states from the rest of the electronic structure. Although the two-dimensional character of these metallic states is confirmed by their lack of out-of-plane dispersion, two new aspects are revealed in these experiments. Firstly, these states do not resemble two branches of opposite, linear velocity that cross at a Dirac point, but rather straightforward parabolas which terminate to high binding energy with a clear band bottom. Secondly, these states are sensitive to time-dependent changes of the YbB$_{6}$ surface under ultrahigh vacuum conditions. Adding the fact that these data from cleaved YbB$_{6}$ surfaces also display spatial variations in the electronic structure, it appears there is little in common between the theoretical expectations for an idealized YbB$_{6}$(001) crystal truncation on the one hand, and these ARPES data from real cleavage surfaces on the other.
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Submitted 25 November, 2014; v1 submitted 23 September, 2014;
originally announced September 2014.
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Kondo hybridisation and the origin of metallic states at the (001) surface of SmB6
Authors:
E. Frantzeskakis,
N. de Jong,
B. Zwartsenberg,
Y. K. Huang,
Y. Pan,
X. Zhang,
J. X. Zhang,
F. X. Zhang,
L. H. Bao,
O. Tegus,
A. Varykhalov,
A. de Visser,
M. S. Golden
Abstract:
SmB6, a well-known Kondo insulator, has been proposed to be an ideal topological insulator with states of topological character located in a clean, bulk electronic gap, namely the Kondo hybridisation gap. Seeing as the Kondo gap arises from many body electronic correlations, this would place SmB6 at the head of a new material class: topological Kondo insulators. Here, for the first time, we show t…
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SmB6, a well-known Kondo insulator, has been proposed to be an ideal topological insulator with states of topological character located in a clean, bulk electronic gap, namely the Kondo hybridisation gap. Seeing as the Kondo gap arises from many body electronic correlations, this would place SmB6 at the head of a new material class: topological Kondo insulators. Here, for the first time, we show that the k-space characteristics of the Kondo hybridisation process is the key to unravelling the origin of the two types of metallic states observed directly by ARPES in the electronic band structure of SmB6(001). One group of these states is essentially of bulk origin, and cuts the Fermi level due to the position of the chemical potential 20 meV above the lowest lying 5d-4f hybridisation zone. The other metallic state is more enigmatic, being weak in intensity, but represents a good candidate for a topological surface state. However, before this claim can be substantiated by an unequivocal measurement of its massless dispersion relation, our data raises the bar in terms of the ARPES resolution required, as we show there to be a strong renormalisation of the hybridisation gaps by a factor 2-3 compared to theory, following from the knowledge of the true position of the chemical potential and a careful comparison with the predictions from recent LDA+Gutzwiler calculations. All in all, these key pieces of evidence act as triangulation markers, providing a detailed description of the electronic landscape in SmB6, pointing the way for future, ultrahigh resolution ARPES experiments to achieve a direct measurement of the Dirac cones in the first topological Kondo insulator.
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Submitted 13 December, 2013; v1 submitted 1 August, 2013;
originally announced August 2013.
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Two Distinct Phases of Bilayer Graphene Films on Ru(0001)
Authors:
Marco Papagno,
Daniela Pacilé,
Dinesh Topwal,
Paolo Moras,
Polina Makarovna Sheverdyaeva,
Fabian Donat Natterer,
Anne Lehnert,
Stefano Rusponi,
Quentin Dubout,
Fabian Calleja,
Emmanouil Frantzeskakis,
Stéphane Pons,
Jun Fujii,
Ivana Vobornik,
Marco Grioni,
Carlo Carbone,
Harald Brune
Abstract:
By combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy we reveal the structural and electronic properties of multilayer graphene on Ru(0001). We prove that large ethylene exposure allows to synthesize two distinct phases of bilayer graphene with different properties. The first phase has Bernal AB stacking with respect to the first graphene layer, displays weak ver…
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By combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy we reveal the structural and electronic properties of multilayer graphene on Ru(0001). We prove that large ethylene exposure allows to synthesize two distinct phases of bilayer graphene with different properties. The first phase has Bernal AB stacking with respect to the first graphene layer, displays weak vertical interaction and electron doping. The long-range ordered moiré pattern modulates the crystal potential and induces replicas of the Dirac cone and minigaps. The second phase has AA stacking sequence with respect to the first layer, displays weak structural and electronic modulation and p-doping. The linearly dispersing Dirac state reveals the nearly-freestanding character of this novel second layer phase.
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Submitted 8 January, 2013;
originally announced January 2013.
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A chemical imaging and Nano-ARPES study of well-ordered thermally reduced SrTiO3(100)
Authors:
Emmanouil Frantzeskakis,
Jose Avila,
Maria C. Asensio
Abstract:
The structural and electronic properties of thermally reduced SrTiO3(100) single crystals have been investigated using a probe with real- and reciprocal-space sensitivity: a synchrotron radiation microsopic setup which offers the possibility of Scanning Photoemission Microscopy and Angle Resolved Photoelectron Spectroscopy (ARPES) down to the nanometric scale. We have spectroscopically imaged the…
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The structural and electronic properties of thermally reduced SrTiO3(100) single crystals have been investigated using a probe with real- and reciprocal-space sensitivity: a synchrotron radiation microsopic setup which offers the possibility of Scanning Photoemission Microscopy and Angle Resolved Photoelectron Spectroscopy (ARPES) down to the nanometric scale. We have spectroscopically imaged the chemical composition of samples which present reproducible and suitable low-energy electron diffraction patterns after following well-established thermal reduction protocols. At the micrometric scale, Ca-rich areas have been directly imaged using high-energy resolution core level photoemission. Moreover, we have monitored the effect of Ca segregation on different features of the SrTiO3(100) electronic band structure, measuring ARPES inside, outside and at the interface of surface inhomogeneities with the identified Ca-rich areas. In particular, the interaction of Ca with the well-known intragap localized state, previously attributed to oxygen vacancies, has been investigated. Moreover, the combination of direct imaging and spectroscopic techniques with high spatial resolution has clarified the long-standing dilemma related to the bulk or surface character of Ca segregation in SrTiO3. Our results present solid evidence that the penetration depth of Ca segregation is very small. In contrast to what has been previously proposed, the origin of long-range surface reconstructions can unlikely be associated to Ca due to strong local variations of its surface concentration.
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Submitted 16 March, 2012; v1 submitted 21 December, 2011;
originally announced December 2011.
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Anisotropic spin gaps in BiAg$_2$-Ag/Si(111)
Authors:
Alberto Crepaldi,
Stephane Pons,
Emmanouil Frantzeskakis,
Klaus Kern,
Marco Grioni
Abstract:
We present a detailed analysis of the band structure of the BiAg$_2$/Ag/Si(111) trilayer system by means of high resolution Angle Resolved Photoemission Spectroscopy (ARPES). BiAg2/Ag/Si(111) exhibits a complex spin polarized electronic structure due to giant spin-orbit interactions. We show that a complete set of constant energy ARPES maps, supplemented by a modified nearly free electron calculat…
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We present a detailed analysis of the band structure of the BiAg$_2$/Ag/Si(111) trilayer system by means of high resolution Angle Resolved Photoemission Spectroscopy (ARPES). BiAg2/Ag/Si(111) exhibits a complex spin polarized electronic structure due to giant spin-orbit interactions. We show that a complete set of constant energy ARPES maps, supplemented by a modified nearly free electron calculation, provides a unique insight into the structure of the spin polarized bands and spin gaps. We also show that the complex gap structure can be continuously tuned in energy by a controlled deposition of an alkali metal.
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Submitted 19 January, 2012; v1 submitted 14 December, 2011;
originally announced December 2011.
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Anisotropy effects on Rashba and topological insulator spin polarized surface states: a unified phenomenological description
Authors:
Emmanouil Frantzeskakis,
Marco Grioni
Abstract:
Spin polarized two-dimensional electronic states have been previously observed on metallic surface alloys with giant Rashba splitting and on the surface of topological insulators. We study the surface band structure of these systems, in a unified manner, by exploiting recent results of k.p theory. The model suggests a different way to address the effect of anisotropy in Rashba systems. Changes in…
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Spin polarized two-dimensional electronic states have been previously observed on metallic surface alloys with giant Rashba splitting and on the surface of topological insulators. We study the surface band structure of these systems, in a unified manner, by exploiting recent results of k.p theory. The model suggests a different way to address the effect of anisotropy in Rashba systems. Changes in the surface band structure of various Rashba compounds can be captured by a single effective parameter which quantifies the competition between the Rashba effect and the hexagonal warping of the constant energy contours. The same model provides a unified phenomenological description of the surface states belonging to materials with topologically trivial and non-trivial band structures.
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Submitted 5 December, 2011; v1 submitted 8 August, 2011;
originally announced August 2011.
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Ag-coverage-dependent symmetry of the electronic states of the Pt(111)-Ag-Bi interface: The ARPES view of a structural transition
Authors:
Emmanouil Frantzeskakis,
Stephane Pons,
Alberto Crepaldi,
Harald Brune,
Klaus Kern,
Marco Grioni
Abstract:
We studied by angle-resolved photoelectron spectroscopy the strain-related structural transition from a pseudomorphic monolayer (ML) to a striped incommensurate phase in an Ag thin film grown on Pt(111). We exploited the surfactant properties of Bi to grow ordered Pt(111)-xMLAg-Bi trilayers with 0 < x < 5 ML, and monitored the dispersion of the Bi-derived interface states to probe the structure of…
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We studied by angle-resolved photoelectron spectroscopy the strain-related structural transition from a pseudomorphic monolayer (ML) to a striped incommensurate phase in an Ag thin film grown on Pt(111). We exploited the surfactant properties of Bi to grow ordered Pt(111)-xMLAg-Bi trilayers with 0 < x < 5 ML, and monitored the dispersion of the Bi-derived interface states to probe the structure of the underlying Ag film. We find that their symmetry changes from threefold to sixfold and back to threefold in the Ag coverage range studied. Together with previous scanning tunneling microscopy and photoelectron diffraction data, these results provide a consistent microscopic description of the coverage-dependent structural transition.
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Submitted 22 December, 2011; v1 submitted 8 August, 2011;
originally announced August 2011.
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A band structure scenario for the giant spin-orbit splitting observed at the Bi/Si(111) interface
Authors:
Emmanouil Frantzeskakis,
Stephane Pons,
Marco Grioni
Abstract:
The Bi/Si(111) (sqrt{3} x sqrt{3})R30 trimer phase offers a prime example of a giant spin-orbit splitting of the electronic states at the interface with a semiconducting substrate. We have performed a detailed angle-resolved photoemission (ARPES) study to clarify the complex topology of the hybrid interface bands. The analysis of the ARPES data, guided by a model tight-binding calculation, reveals…
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The Bi/Si(111) (sqrt{3} x sqrt{3})R30 trimer phase offers a prime example of a giant spin-orbit splitting of the electronic states at the interface with a semiconducting substrate. We have performed a detailed angle-resolved photoemission (ARPES) study to clarify the complex topology of the hybrid interface bands. The analysis of the ARPES data, guided by a model tight-binding calculation, reveals a previously unexplored mechanism at the origin of the giant spin-orbit splitting, which relies primarily on the underlying band structure. We anticipate that other similar interfaces characterized by trimer structures could also exhibit a large effect.
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Submitted 28 July, 2010; v1 submitted 17 June, 2010;
originally announced June 2010.
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Silicon surface with giant spin-splitting
Authors:
I. Gierz,
T. Suzuki,
E. Frantzeskakis,
S. Pons,
S. Ostanin,
A. Ernst,
J. Henk,
M. Grioni,
K. Kern,
C. R. Ast
Abstract:
We demonstrate the induction of a giant Rashba-type spin-splitting on a semiconducting substrate by means of a Bi trimer adlayer on a Si(111) wafer. The in-plane inversion symmetry is broken so that the in-plane potential gradient induces a giant spin-splitting with a Rashba energy of about 140 meV, which is more than an order of magnitude larger than what has previously been reported for any se…
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We demonstrate the induction of a giant Rashba-type spin-splitting on a semiconducting substrate by means of a Bi trimer adlayer on a Si(111) wafer. The in-plane inversion symmetry is broken so that the in-plane potential gradient induces a giant spin-splitting with a Rashba energy of about 140 meV, which is more than an order of magnitude larger than what has previously been reported for any semiconductor heterostructure. The separation of the electronic states is larger than their lifetime broadening, which has been directly observed with angular resolved photoemission spectroscopy. The experimental results are confirmed by relativistic first-principles calculations. We envision important implications for basic phenomena as well as for the semiconductor based technology.
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Submitted 6 May, 2009;
originally announced May 2009.
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Tunable spin-gaps in a quantum-confined geometry
Authors:
Emmanouil Frantzeskakis,
Stephane Pons,
Hossein Mirhosseini,
Jurgen Henk,
Christian. R. Ast,
Marco Grioni
Abstract:
We have studied the interplay of a giant spin-orbit splitting and of quantum confinement in artificial Bi-Ag-Si trilayer structures. Angle-resolved photoelectron spectroscopy (ARPES) reveals the formation of a complex spin-dependent gap structure, which can be tuned by varying the thickness of the Ag buffer layer. This provides a means to tailor the electronic structure at the Fermi energy, with…
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We have studied the interplay of a giant spin-orbit splitting and of quantum confinement in artificial Bi-Ag-Si trilayer structures. Angle-resolved photoelectron spectroscopy (ARPES) reveals the formation of a complex spin-dependent gap structure, which can be tuned by varying the thickness of the Ag buffer layer. This provides a means to tailor the electronic structure at the Fermi energy, with potential applications for silicon-compatible spintronic devices.
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Submitted 11 June, 2008; v1 submitted 26 May, 2008;
originally announced May 2008.
