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Non-invasive urinary bladder volume estimation with artefact-suppressed bio-impedance measurements
Authors:
Kanika Dheman,
Stefan Walser,
Philipp Mayer,
Manuel Eggimann,
Marko Kozomara,
Denise Franke,
Thomas Hermanns,
Hugo Sax,
Simone Schürle,
Michele Magno
Abstract:
Urine output is a vital parameter to gauge kidney health. Current monitoring methods include manually written records, invasive urinary catheterization or ultrasound measurements performed by highly skilled personnel. Catheterization bears high risks of infection while intermittent ultrasound measures and manual recording are time consuming and might miss early signs of kidney malfunction. Bioimpe…
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Urine output is a vital parameter to gauge kidney health. Current monitoring methods include manually written records, invasive urinary catheterization or ultrasound measurements performed by highly skilled personnel. Catheterization bears high risks of infection while intermittent ultrasound measures and manual recording are time consuming and might miss early signs of kidney malfunction. Bioimpedance (BI) measurements may serve as a non-invasive alternative for measuring urine volume in vivo. However, limited robustness have prevented its clinical translation. Here, a deep learning-based algorithm is presented that processes the local BI of the lower abdomen and suppresses artefacts to measure the bladder volume quantitatively, non-invasively and without the continuous need for additional personnel. A tetrapolar BI wearable system called ANUVIS was used to collect continuous bladder volume data from three healthy subjects to demonstrate feasibility of operation, while clinical gold standards of urodynamic (n=6) and uroflowmetry tests (n=8) provided the ground truth. Optimized location for electrode placement and a model for the change in BI with changing bladder volume is deduced. The average error for full bladder volume estimation and for residual volume estimation was -29 +/-87.6 ml, thus, comparable to commercial portable ultrasound devices (Bland Altman analysis showed a bias of -5.2 ml with LoA between 119.7 ml to -130.1 ml), while providing the additional benefit of hands-free, non-invasive, and continuous bladder volume estimation. The combination of the wearable BI sensor node and the presented algorithm provides an attractive alternative to current standard of care with potential benefits in providing insights into kidney function.
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Submitted 24 March, 2023;
originally announced March 2023.
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GW electronic structure calculations of Co doped ZnO
Authors:
Dennis Franke,
Michael Lorke,
Thomas Frauenheim,
A. L. da Rosa
Abstract:
Recently the point defect responsible for the intra-3$d$ luminescence of cobalt in doped ZnO samples has been indentified\,\cite{pssb2019}. In this work we further extend our investigation to other point defects in Co-doped ZnO. We use density-functional theory and GW calculations to determined the orbital-resolved band structure of cobalt doped zinc oxide (ZnO).
We show that mainly O-p and Co-d…
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Recently the point defect responsible for the intra-3$d$ luminescence of cobalt in doped ZnO samples has been indentified\,\cite{pssb2019}. In this work we further extend our investigation to other point defects in Co-doped ZnO. We use density-functional theory and GW calculations to determined the orbital-resolved band structure of cobalt doped zinc oxide (ZnO).
We show that mainly O-p and Co-d orbitals take part in the process and confirm that an oxygen interstitial nearby a cobalt atom is a likely defect to occur in Co-implanted ZnO samples. We also rule out that other common point defects in ZnO can be responsible for the observed intra-3$d$ transition. Finally, we suggest that defect complexes involving oxygen interstitials could be used to promote ferromagnetism in cobalt doped ZnO samples.
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Submitted 13 August, 2019;
originally announced August 2019.
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Fast two-qubit logic with holes in germanium
Authors:
N. W. Hendrickx,
D. P. Franke,
A. Sammak,
G. Scappucci,
M. Veldhorst
Abstract:
The promise of quantum computation with quantum dots has stimulated widespread research. Still, a platform that can combine excellent control with fast and high-fidelity operation is absent. Here, we show single and two-qubit operations based on holes in germanium. A high degree of control over the tunnel coupling and detuning is obtained by exploiting quantum wells with very low disorder and by w…
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The promise of quantum computation with quantum dots has stimulated widespread research. Still, a platform that can combine excellent control with fast and high-fidelity operation is absent. Here, we show single and two-qubit operations based on holes in germanium. A high degree of control over the tunnel coupling and detuning is obtained by exploiting quantum wells with very low disorder and by working in a virtual gate space. Spin-orbit coupling obviates the need for microscopic elements and enables rapid qubit control with Rabi frequencies exceeding 100 MHz and a single-qubit fidelity of 99.3 %. We demonstrate fast two-qubit CX gates executed within 75 ns and minimize decoherence by operating at the charge symmetry point. Planar germanium thus matured within one year from a material that can host quantum dots to a platform enabling two-qubit logic, positioning itself as a unique material to scale up spin qubits for quantum information.
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Submitted 25 April, 2019;
originally announced April 2019.
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Electronic and Optical Properties of Functionalized GaN (10-10) Surfaces using Hybrid-Density Functionals
Authors:
Dennis Franke,
Michael Lorke,
Thomas Frauenheim,
Andreia Luisa da Rosa
Abstract:
Adsorption of small ligands on semiconductor surfaces is a possible route to modify these surfaces so that they can be used in biosensing and optoelectronic devices. In this work we perform density-functional theory calculations of electronic and optical properties of small ligands on GaN-(10$\bar1$0) surfaces. From the investigated anchor groups we show that thiol groups introduce states into the…
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Adsorption of small ligands on semiconductor surfaces is a possible route to modify these surfaces so that they can be used in biosensing and optoelectronic devices. In this work we perform density-functional theory calculations of electronic and optical properties of small ligands on GaN-(10$\bar1$0) surfaces. From the investigated anchor groups we show that thiol groups introduce states into the GaN band gap. However, these state are not optically active, at least for these perfect surfaces. This means that more realistic surfaces need to be considered to suggest how surface modification can enhance the optical properties of GaN non-polar surfaces.
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Submitted 22 October, 2018;
originally announced October 2018.
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Hybrid density-functional theory calculations of electronic and optical properties of mercaptocarboxylic acids on ZnO $(10{\overline 1}0)$ surfaces
Authors:
Dennis Franke,
Michael Lorke,
Thomas Frauenheim,
Andrea L. daRosa
Abstract:
In this work we investigate the electronic properties of mercaptocarboxylic acids with several carbon chain lengths adsorbed on ZnO-(10-10) surfaces via density functional theory calculations using semi-local and hybrid exchange-correlation functionals. Amongst the investigated structures, we identify the monodentate adsorption mode to be stable. Moreover, this mode introduces optically active sta…
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In this work we investigate the electronic properties of mercaptocarboxylic acids with several carbon chain lengths adsorbed on ZnO-(10-10) surfaces via density functional theory calculations using semi-local and hybrid exchange-correlation functionals. Amongst the investigated structures, we identify the monodentate adsorption mode to be stable. Moreover, this mode introduces optically active states in the ZnO gap, is further confirmed by the calculation of the dielectric function at PBE0 and TD-PBE0 levels. One interesting finding is that adsorption mode and the dielectric properties of the hybrid system are both rather insensitive to the chain length, since the acceptor molecular state is very localized on the sulphur atom. This indicates that even small molecules can be used to stabilize ZnO surface and to enhance its functionality for opto-electronic applications.
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Submitted 4 October, 2018;
originally announced October 2018.
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Fidelius: Protecting User Secrets from Compromised Browsers
Authors:
Saba Eskandarian,
Jonathan Cogan,
Sawyer Birnbaum,
Peh Chang Wei Brandon,
Dillon Franke,
Forest Fraser,
Gaspar Garcia Jr.,
Eric Gong,
Hung T. Nguyen,
Taresh K. Sethi,
Vishal Subbiah,
Michael Backes,
Giancarlo Pellegrino,
Dan Boneh
Abstract:
Users regularly enter sensitive data, such as passwords, credit card numbers, or tax information, into the browser window. While modern browsers provide powerful client-side privacy measures to protect this data, none of these defenses prevent a browser compromised by malware from stealing it. In this work, we present Fidelius, a new architecture that uses trusted hardware enclaves integrated into…
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Users regularly enter sensitive data, such as passwords, credit card numbers, or tax information, into the browser window. While modern browsers provide powerful client-side privacy measures to protect this data, none of these defenses prevent a browser compromised by malware from stealing it. In this work, we present Fidelius, a new architecture that uses trusted hardware enclaves integrated into the browser to enable protection of user secrets during web browsing sessions, even if the entire underlying browser and OS are fully controlled by a malicious attacker.
Fidelius solves many challenges involved in providing protection for browsers in a fully malicious environment, offering support for integrity and privacy for form data, JavaScript execution, XMLHttpRequests, and protected web storage, while minimizing the TCB. Moreover, interactions between the enclave and the browser, the keyboard, and the display all require new protocols, each with their own security considerations. Finally, Fidelius takes into account UI considerations to ensure a consistent and simple interface for both developers and users.
As part of this project, we develop the first open source system that provides a trusted path from input and output peripherals to a hardware enclave with no reliance on additional hypervisor security assumptions. These components may be of independent interest and useful to future projects.
We implement and evaluate Fidelius to measure its performance overhead, finding that Fidelius imposes acceptable overhead on page load and user interaction for secured pages and has no impact on pages and page components that do not use its enhanced security features.
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Submitted 3 December, 2018; v1 submitted 13 September, 2018;
originally announced September 2018.
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Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium
Authors:
N. W. Hendrickx,
M. L. V. Tagliaferri,
M. Kouwenhoven,
R. Li,
D. P. Franke,
A. Sammak,
A. Brinkman,
G. Scappucci,
M. Veldhorst
Abstract:
We fabricate Josephson field-effect-transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over junction lengths of several micrometers. In superconducting quantum point contacts we observe discretization of supercurrent, as well as Fabry-Perot resonances, demonstrating ballistic transport. The magnetic field dependen…
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We fabricate Josephson field-effect-transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over junction lengths of several micrometers. In superconducting quantum point contacts we observe discretization of supercurrent, as well as Fabry-Perot resonances, demonstrating ballistic transport. The magnetic field dependence of the supercurrent follows a clear Fraunhofer-like pattern and Shapiro steps appear upon microwave irradiation. Multiple Andreev reflections give rise to conductance enhancement and evidence a transparent interface, confirmed by analyzing the excess current. These demonstrations of ballistic superconducting transport are promising for hybrid quantum technology in germanium.
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Submitted 2 August, 2018;
originally announced August 2018.
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Rent's rule and extensibility in quantum computing
Authors:
David P. Franke,
James S. Clarke,
Lieven M. K. Vandersypen,
Menno Veldhorst
Abstract:
Quantum computing is on the verge of a transition from fundamental research to practical applications. Yet, to make the step to large-scale quantum computation, an extensible qubit system has to be developed. In classical semiconductor technology, this was made possible by the invention of the integrated circuit, which allowed to interconnect large numbers of components without having to solder to…
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Quantum computing is on the verge of a transition from fundamental research to practical applications. Yet, to make the step to large-scale quantum computation, an extensible qubit system has to be developed. In classical semiconductor technology, this was made possible by the invention of the integrated circuit, which allowed to interconnect large numbers of components without having to solder to each and every one of them. Similarly, we expect that the scaling of interconnections and control lines with the number of qubits will be a central bottleneck in creating large-scale quantum technology. Here, we define the quantum Rent's exponent $p$ to quantify the progress in overcoming this challenge at different levels throughout the quantum computing stack. We further discuss the concept of quantum extensibility as an indicator of a platform's potential to reach the large quantum volume needed for universal quantum computing and review extensibility limits faced by different qubit implementations on the way towards truly large-scale qubit systems.
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Submitted 6 June, 2018;
originally announced June 2018.
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Spin lifetime and charge noise in hot silicon quantum dot qubits
Authors:
L. Petit,
J. M. Boter,
H. G. J. Eenink,
G. Droulers,
M. L. V. Tagliaferri,
R. Li,
D. P. Franke,
K. J. Singh,
J. S. Clarke,
R. N. Schouten,
V. V. Dobrovitski,
L. M. K. Vandersypen,
M. Veldhorst
Abstract:
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise…
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We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.
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Submitted 1 September, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.
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Gate-controlled quantum dots and superconductivity in planar germanium
Authors:
N. W. Hendrickx,
D. P. Franke,
A. Sammak,
M. Kouwenhoven,
D. Sabbagh,
L. Yeoh,
R. Li,
M. L. V. Tagliaferri,
M. Virgilio,
G. Capellini,
G. Scappucci,
M. Veldhorst
Abstract:
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we reali…
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Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we realise an approach that overcomes these issues altogether and integrate gate-defined quantum dots and superconductivity into a material system with strong spin-orbit coupling. In our germanium heterostructures, heavy holes with mobilities exceeding 500,000 cm$^2$/Vs are confined in shallow quantum wells that are directly contacted by annealed aluminium leads. We demonstrate gate-tunable superconductivity and find a characteristic voltage $I_cR_n$ that exceeds 10 $μ$V. Germanium therefore has great promise for fast and coherent quantum hardware and, being compatible with standard manufacturing, could become a leading material in the quantum revolution.
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Submitted 26 January, 2018;
originally announced January 2018.
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A Crossbar Network for Silicon Quantum Dot Qubits
Authors:
R. Li,
L. Petit,
D. P. Franke,
J. P. Dehollain,
J. Helsen,
M. Steudtner,
N. K. Thomas,
Z. R. Yoscovits,
K. J. Singh,
S. Wehner,
L. M. K. Vandersypen,
J. S. Clarke,
M. Veldhorst
Abstract:
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. In order to increase the number of qubits to the thousands or millions of qubits needed for practical quantum info…
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The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. In order to increase the number of qubits to the thousands or millions of qubits needed for practical quantum information we present an architecture based on shared control and a scalable number of lines. Crucially, the control lines define the qubit grid, such that no local components are required. Our design enables qubit coupling beyond nearest neighbors, providing prospects for non-planar quantum error correction protocols. Fabrication is based on a three-layer design to define qubit and tunnel barrier gates. We show that a double stripline on top of the structure can drive high-fidelity single-qubit rotations. Qubit addressability and readout are enabled by self-aligned inhomogeneous magnetic fields induced by direct currents through superconducting gates. Qubit coupling is based on the exchange interaction, and we show that parallel two-qubit gates can be performed at the detuning noise insensitive point. While the architecture requires a high level of uniformity in the materials and critical dimensions to enable shared control, it stands out for its simplicity and provides prospects for large-scale quantum computation in the near future.
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Submitted 10 November, 2017;
originally announced November 2017.
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Multiple-quantum transitions and charge-induced decoherence of donor nuclear spins in silicon
Authors:
David P. Franke,
Moritz P. D. Pflüger,
Kohei M. Itoh,
Martin S. Brandt
Abstract:
We study single- and multi-quantum transitions of the nuclear spins of ionized arsenic donors in silicon and find quadrupolar effects on the coherence times, which we link to fluctuating electrical field gradients present after the application of light and bias voltage pulses. To determine the coherence times of superpositions of all orders in the 4-dimensional Hilbert space, we use a phase-cyclin…
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We study single- and multi-quantum transitions of the nuclear spins of ionized arsenic donors in silicon and find quadrupolar effects on the coherence times, which we link to fluctuating electrical field gradients present after the application of light and bias voltage pulses. To determine the coherence times of superpositions of all orders in the 4-dimensional Hilbert space, we use a phase-cycling technique and find that, when electrical effects were allowed to decay, these times scale as expected for a field-like decoherence mechanism such as the interaction with surrounding $^{29}$Si nuclear spins.
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Submitted 13 October, 2016;
originally announced October 2016.
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Electron nuclear double resonance with donor-bound excitons in silicon
Authors:
David P. Franke,
Michael Szech,
Florian M. Hrubesch,
Helge Riemann,
Nikolai V. Abrosimov,
Peter Becker,
Hans-Joachim Pohl,
Kohei M. Itoh,
Michael L. W. Thewalt,
Martin S. Brandt
Abstract:
We present Auger-electron-detected magnetic resonance (AEDMR) experiments on phosphorus donors in silicon, where the selective optical generation of donor-bound excitons is used for the electrical detection of the electron spin state. Because of the long dephasing times of the electron spins in isotopically purified $^{28}$Si, weak microwave fields are sufficient, which allow to realize broadband…
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We present Auger-electron-detected magnetic resonance (AEDMR) experiments on phosphorus donors in silicon, where the selective optical generation of donor-bound excitons is used for the electrical detection of the electron spin state. Because of the long dephasing times of the electron spins in isotopically purified $^{28}$Si, weak microwave fields are sufficient, which allow to realize broadband AEDMR in a commercial ESR resonator. Implementing Auger-electron-detected ENDOR, we further demonstrate the optically-assisted control of the nuclear spin under conditions where the hyperfine splitting is not resolved in the optical spectrum. Compared to previous studies, this significantly relaxes the requirements on the sample and the experimental setup, e.g. with respect to strain, isotopic purity and temperature. We show AEDMR of phosphorus donors in silicon with natural isotope composition, and discuss the feasibility of ENDOR measurements also in this system.
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Submitted 29 November, 2016; v1 submitted 9 August, 2016;
originally announced August 2016.
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Quadrupolar Effects on Nuclear Spins of Neutral Arsenic Donors in Silicon
Authors:
David P. Franke,
Moritz P. D. Pflüger,
Pierre-André Mortemousque,
Kohei M. Itoh,
Martin S. Brandt
Abstract:
We present electrically detected electron nuclear double resonance measurements of the nuclear spins of ionized and neutral arsenic donors in strained silicon. In addition to a reduction of the hyperfine coupling, we find significant quadrupole interactions of the nuclear spin of the neutral donors of the order of 10 kHz. By comparing these to the quadrupole shifts due to crystal fields measured f…
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We present electrically detected electron nuclear double resonance measurements of the nuclear spins of ionized and neutral arsenic donors in strained silicon. In addition to a reduction of the hyperfine coupling, we find significant quadrupole interactions of the nuclear spin of the neutral donors of the order of 10 kHz. By comparing these to the quadrupole shifts due to crystal fields measured for the ionized donors, we identify the effect of the additional electron on the electric field gradient at the nucleus. This extra component is expected to be caused by the coupling to electric field gradients created due to changes in the electron wavefunction under strain.
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Submitted 4 March, 2016;
originally announced March 2016.
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High cooperativity coupling between a phosphorus donor spin ensemble and a superconducting microwave resonator
Authors:
Christoph W. Zollitsch,
Kai Mueller,
David P. Franke,
Sebastian T. B. Goennenwein,
Martin S. Brandt,
Rudolf Gross,
Hans Huebl
Abstract:
We investigate the coupling of an ensemble of phosphorus donors in an isotopically purified $^{28}$Si host lattice interacting with a superconducting coplanar waveguide resonator. The microwave transmission spectrum of the resonator shows a normal mode splitting characteristic for high cooperativity. The evaluated collective coupling strength $g_{\mathrm{eff}}$ is of the same order as the loss rat…
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We investigate the coupling of an ensemble of phosphorus donors in an isotopically purified $^{28}$Si host lattice interacting with a superconducting coplanar waveguide resonator. The microwave transmission spectrum of the resonator shows a normal mode splitting characteristic for high cooperativity. The evaluated collective coupling strength $g_{\mathrm{eff}}$ is of the same order as the loss rate of the spin system $γ$, indicating the onset of strong coupling. We develop a statistical model to describe the influence of temperature on the coupling strength from $50\,\mathrm{mK}$ to $3.5\,\mathrm{K}$ and find a scaling of the coupling strength with the square root of the number of thermally polarized spins.
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Submitted 9 October, 2015; v1 submitted 14 July, 2015;
originally announced July 2015.
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Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
Authors:
P. A. Mortemousque,
S. Rosenius,
G. Pica,
D. P. Franke,
T. Sekiguchi,
A. Truong,
M. P. Vlasenko,
L. S. Vlasenko,
M. S. Brandt,
R. G. Elliman,
K. M. Itoh
Abstract:
Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The exper…
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Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a donor and a spin-dependent recombination readout center.
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Submitted 14 November, 2016; v1 submitted 12 June, 2015;
originally announced June 2015.
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Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors
Authors:
David P. Franke,
Florian M. Hrubesch,
Markus Künzl,
Kohei M. Itoh,
Martin Stutzmann,
Felix Hoehne,
Lukas Dreher,
Martin S. Brandt
Abstract:
The nuclear spins of ionized donors in silicon have become an interesting quantum resource due to their very long coherence times. Their perfect isolation, however, comes at a price, since the absence of the donor electron makes the nuclear spin difficult to control. We demonstrate that the quadrupolar interaction allows us to effectively tune the nuclear magnetic resonance of ionized arsenic dono…
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The nuclear spins of ionized donors in silicon have become an interesting quantum resource due to their very long coherence times. Their perfect isolation, however, comes at a price, since the absence of the donor electron makes the nuclear spin difficult to control. We demonstrate that the quadrupolar interaction allows us to effectively tune the nuclear magnetic resonance of ionized arsenic donors in silicon via strain and determine the two nonzero elements of the S tensor linking strain and electric field gradients in this material to $S_{11}=1.5\times10^{22}$ V/m$^2$ and $S_{44}=6\times 10^{22}$ V/m$^2$. We find a stronger benefit of dynamical decoupling on the coherence properties of transitions subject to first-order quadrupole shifts than on those subject to only second-order shifts and discuss applications of quadrupole physics including mechanical driving of magnetic resonance, cooling of mechanical resonators, and strain-mediated spin coupling.
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Submitted 7 April, 2016; v1 submitted 28 February, 2015;
originally announced March 2015.
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Spin-dependent recombination at arsenic donors in ion-implanted silicon
Authors:
David P. Franke,
Manabu Ostuka,
Takashi Matsuoka,
Leonid S. Vlasenko,
Marina P. Vlasenko,
Martin S. Brandt,
Kohei M. Itoh
Abstract:
Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and electrically detected magnetic resonance (EDMR) monitoring the DC current through the sample. The high sensitivity of these techniques allows the observation of the m…
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Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and electrically detected magnetic resonance (EDMR) monitoring the DC current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance in particular of As in weak magnetic fields and at low resonance frequencies (40-1200 MHz), where high-field-forbidden transitions between the magnetic substates can be observed due to the mixing of electron and nuclear spin states. Several implantation-induced defects are present in the samples studied and act as spin readout partner. We explicitly demonstrate this by electrically detected electron double resonance experiments and identify a pair recombination of close pairs formed by As donors and oxygen-vacancy centers in an excited triplet state (SL1) as the dominant spin-dependent process in As-implanted Czochralski-grown Si.
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Submitted 21 July, 2014;
originally announced July 2014.
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Spin-dependent recombination involving oxygen-vacancy complexes in silicon
Authors:
David P. Franke,
Felix Hoehne,
Leonid S. Vlasenko,
Kohei M. Itoh,
Martin S. Brandt
Abstract:
Spin-dependent relaxation and recombination processes in $γ$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is…
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Spin-dependent relaxation and recombination processes in $γ$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between $^{31}$P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics are studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin 1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.
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Submitted 26 February, 2014; v1 submitted 24 February, 2014;
originally announced February 2014.
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Spin Selection Rule-Based Sub-Millisecond Hyperpolarization of Nuclear Spins in Silicon
Authors:
Felix Hoehne,
Lukas Dreher,
David P. Franke,
Martin Stutzmann,
Leonid S. Vlasenko,
Kohei M. Itoh,
Martin S. Brandt
Abstract:
In this work, we devise a fast and effective nuclear spin hyperpolarization scheme, which is in principle magnetic field and temperature independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus donor nuclear spins in bulk silicon, which are created within less than 100 us in a magnetic field of 0.35 T at a temperature of 5 K. The polarization scheme i…
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In this work, we devise a fast and effective nuclear spin hyperpolarization scheme, which is in principle magnetic field and temperature independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus donor nuclear spins in bulk silicon, which are created within less than 100 us in a magnetic field of 0.35 T at a temperature of 5 K. The polarization scheme is based on a spin-dependent recombination process via weakly-coupled spin pairs, for which the recombination time constant strongly depends on the relative orientation of the two spins. We further use this scheme to measure the nuclear spin relaxation time and find a value of approx. 100 ms under illumination, in good agreement with the value calculated for nuclear spin flips induced by repeated ionization and deionization processes.
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Submitted 16 August, 2013;
originally announced August 2013.
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Time Constants of Spin-Dependent Recombination Processes
Authors:
Felix Hoehne,
Lukas Dreher,
Maximilian Suckert,
David P. Franke,
Martin Stutzmann,
Martin S. Brandt
Abstract:
We present experiments to systematically study the time constants of spin-dependent recombination processes in semiconductors using pulsed electrically detected magnetic resonance (EDMR). The combination of time-programmed optical excitation and pulsed spin manipulation allows us to directly measure the recombination time constants of electrons via localized spin pairs and the time constant of spi…
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We present experiments to systematically study the time constants of spin-dependent recombination processes in semiconductors using pulsed electrically detected magnetic resonance (EDMR). The combination of time-programmed optical excitation and pulsed spin manipulation allows us to directly measure the recombination time constants of electrons via localized spin pairs and the time constant of spin pair formation as a function of the optical excitation intensity. Using electron nuclear double resonance, we show that the time constant of spin pair formation is determined by an electron capture process. Based on these time constants we devise a set of rate equations to calculate the current transient after a resonant microwave pulse and compare the results with experimental data. Finally, we critically discuss the effects of different boxcar integration time intervals typically used to analyze pulsed EDMR experiments on the determination of the time constants. The experiments are performed on phosphorus-doped silicon, where EDMR via spin pairs formed by phosphorus donors and Si/SiO2 interface dangling bond defects is detected.
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Submitted 15 July, 2013;
originally announced July 2013.
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Limits of the seismogenic zone in the epicentral region of the 26 December 2004 great Sumatra-Andaman earthquake: Results from seismic refraction and wide-angle reflection surveys and thermal modeling
Authors:
Frauke Klingelhoefer,
Marc-André Gutscher,
S. Ladage,
J. -X. Dessa,
David Graindorge,
D. Franke,
C. André,
Haryadi Permana,
T. Yudistira,
Ajay Chauhan
Abstract:
The 26 December 2004 Sumatra earthquake (Mw = 9.1) initiated around 30 km depth and ruptured 1300 km of the Indo-Australian Sunda plate boundary. During the Sumatra OBS (ocean bottom seismometer) survey, a wide angle seismic profile was acquired across the epicentral region. A seismic velocity model was obtained from combined travel time tomography and forward modeling. Together with reflection…
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The 26 December 2004 Sumatra earthquake (Mw = 9.1) initiated around 30 km depth and ruptured 1300 km of the Indo-Australian Sunda plate boundary. During the Sumatra OBS (ocean bottom seismometer) survey, a wide angle seismic profile was acquired across the epicentral region. A seismic velocity model was obtained from combined travel time tomography and forward modeling. Together with reflection seismic data from the SeaCause II cruise, the deep structure of the source region of the great earthquake is revealed. Four to five kilometers of sediments overlie the oceanic crust at the trench, and the subducting slab can be imaged down to a depth of 35 km. We find a crystalline backstop 120 km from the trench axis, below the fore arc basin. A high velocity zone at the lower landward limit of the raycovered domain, at 22 km depth, marks a shallow continental Moho, 170 km from the trench. The deep structure obtained from the seismic data was used to construct a thermal model of the fore arc in order to predict the limits of the seismogenic zone along the plate boundary fault. Assuming 100C-150C as its updip limit, the seismogenic zone is predicted to begin 530 km from the trench. The downdip limit of the 2004 rupture as inferred from aftershocks is within the 350C 450C temperature range, but this limit is 210-250 km from the trench axis and is much deeper than the fore arc Moho. The deeper part of the rupture occurred along the contact between the mantle wedge and the downgoing plate.
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Submitted 8 February, 2010;
originally announced February 2010.
