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Magnetic metamaterials by ion-implantation
Authors:
Christina Vantaraki,
Petter Ström,
Tuan T. Tran,
Matías P. Grassi,
Giovanni Fevola,
Michael Foerster,
Jerzy T. Sadowski,
Daniel Primetzhofer,
Vassilios Kapaklis
Abstract:
We present a method for the additive fabrication of planar magnetic nanoarrays with minimal surface roughness. Synthesis is accomplished by combining electron-beam lithography, used to generate nanometric patterned masks, with ion implantation in thin films. By implanting $^{56}$Fe$^{+}$ ions, we are able to introduce magnetic functionality in a controlled manner into continuous Pd thin films, ach…
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We present a method for the additive fabrication of planar magnetic nanoarrays with minimal surface roughness. Synthesis is accomplished by combining electron-beam lithography, used to generate nanometric patterned masks, with ion implantation in thin films. By implanting $^{56}$Fe$^{+}$ ions, we are able to introduce magnetic functionality in a controlled manner into continuous Pd thin films, achieving 3D spatial resolution down to a few tens of nanometers. Our results demonstrate the successful application of this technique in fabricating square artificial spin ice lattices, which exhibit well-defined magnetization textures and interactions among the patterned magnetic elements.
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Submitted 16 September, 2024;
originally announced September 2024.
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Measurements of dislocations in 4H-SiC with rocking curve imaging
Authors:
Ahmar Khaliq,
Felix Wittwer,
Niklas Pyrlik,
Giovanni Fevola,
Svenja Patjens,
Jackson Barp,
Gero Falkenberg,
Sven Hampel,
Michael Stuckelberger,
Jan Garrevoet,
Dennis Bruckner,
Peter Modregger
Abstract:
4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmi…
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4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes.
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Submitted 30 August, 2024;
originally announced September 2024.
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X-ray diffraction with micrometer spatial resolution for highly absorbing samples
Authors:
P. Chakrabarti,
A. Wildeis,
M. Hartmann,
R. Brandt,
R. Döhrmann,
G. Fevola,
C. Ossig,
M. E. Stuckelberger,
J. Garrevoet,
K. V. Falch,
V. Galbierz,
G. Falkenberg,
P. Modregger
Abstract:
X-ray diffraction with high spatial resolution is commonly used to characterize (poly-)crystalline samples with, for example, respect to local strain, residual stress, grain boundaries and texture. However, the investigation of highly absorbing samples or the simultaneous assessment of high-Z materials by X-ray fluorescence have been limited due to the utilisation of low photon energies. Here, we…
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X-ray diffraction with high spatial resolution is commonly used to characterize (poly-)crystalline samples with, for example, respect to local strain, residual stress, grain boundaries and texture. However, the investigation of highly absorbing samples or the simultaneous assessment of high-Z materials by X-ray fluorescence have been limited due to the utilisation of low photon energies. Here, we report on a goniometer-based setup implemented at the P06 beamline of PETRA III that allows for micrometer spatial resolution with a photon energy of 35 keV and above. A highly focused beam was achieved by using compound refractive lenses and high precision sample manipulation was enabled by a goniometer that allows for up to 5D scans (3 rotations & 2 translations). As experimental examples, we demonstrate the determination of local strain variations in martensitic steel samples with micrometer spatial resolution as well as the simultaneous elemental distribution for high-Z materials in a thin film solar cell. Our proposed approach allows users from the materials science community to determine micro-structural properties even in highly absorbing samples.
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Submitted 31 January, 2022;
originally announced January 2022.
