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An evaluation strategy of the thermal conductance of semiconductor interfaces using ultraviolet light
Authors:
Dian Li,
Joseph Feser
Abstract:
In the previous studies, the ultraviolet light thermoreflectance (UV-TDTR) signal from bulk semiconducting samples cannot be well explained by a thermal models based on the assumption that the heat is both absorbed and probed near the surface. A thermoreflectance (TDTR) technique was developed to directly excite semiconductors using UV-TDTR. At λ = 400nm, the photon energy is much greater than mos…
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In the previous studies, the ultraviolet light thermoreflectance (UV-TDTR) signal from bulk semiconducting samples cannot be well explained by a thermal models based on the assumption that the heat is both absorbed and probed near the surface. A thermoreflectance (TDTR) technique was developed to directly excite semiconductors using UV-TDTR. At λ = 400nm, the photon energy is much greater than most semiconducting bandgaps, potentially allowing semiconducting transducers to absorb light within about 10 nm of the surface, potentially enabling direct measurements of semiconductor-semiconductor interfaces. The thermoreflectance coefficient for some direct-bandgap semiconducting materials was measured. Thermal transport models were fitted to thermorefectance data collected from the system. The differences in the signal for semiconductors with different doping and nanostructure features were also studied, which should change the recombination rate. No significant changes to the signal were observed.
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Submitted 18 November, 2023;
originally announced November 2023.
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A study on the thermal conductance of interface between dissimilar metals
Authors:
Dian Li,
Joseph Feser
Abstract:
Whether diffuse mismatch model for electrons (DMMe) hold true in more general cases remains largely unexplored, especially in cases where at least one material does not behave like a free-electron metal and/or the interface is smooth enough to allow non-diffuse transmission of electrons. In this study, DMMe was proposed to predict the thermal conductance of metal-metal interfaces. A set of aluminu…
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Whether diffuse mismatch model for electrons (DMMe) hold true in more general cases remains largely unexplored, especially in cases where at least one material does not behave like a free-electron metal and/or the interface is smooth enough to allow non-diffuse transmission of electrons. In this study, DMMe was proposed to predict the thermal conductance of metal-metal interfaces. A set of aluminum-X samples (X = Cu, Ag, Fe, Ni) were grown and the time domain thermoreflectance (TDTR) technique was used to measure the metal-metal interface conductance. It was then compared to the two variants of the DMMe-using both a crude theory based on free-electron metals and accurate band structures provided by density functional theory.
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Submitted 18 November, 2023;
originally announced November 2023.
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Metric Program Synthesis
Authors:
John Feser,
Isil Dillig,
Armando Solar-Lezama
Abstract:
We present a new domain-agnostic synthesis technique for generating programs from input-output examples. Our method, called metric program synthesis, relaxes the well-known observational equivalence idea (used widely in bottom-up enumerative synthesis) into a weaker notion of observational similarity, with the goal of reducing the search space that the synthesizer needs to explore. Our method clus…
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We present a new domain-agnostic synthesis technique for generating programs from input-output examples. Our method, called metric program synthesis, relaxes the well-known observational equivalence idea (used widely in bottom-up enumerative synthesis) into a weaker notion of observational similarity, with the goal of reducing the search space that the synthesizer needs to explore. Our method clusters programs into equivalence classes based on a distance metric and constructs a version space that compactly represents "approximately correct" programs. Then, given a "close enough" program sampled from this version space, our approach uses a distance-guided repair algorithm to find a program that exactly matches the given input-output examples. We have implemented our proposed metric program synthesis technique in a tool called SyMetric and evaluate it in three different domains considered in prior work. Our evaluation shows that SyMetric outperforms other domain-agnostic synthesizers that use observational equivalence and that it achieves results competitive with domain-specific synthesizers that are either designed for or trained on those domains.
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Submitted 10 October, 2022; v1 submitted 13 June, 2022;
originally announced June 2022.
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Phonon scattering and vibrational localization in 2D embedded nanoparticle composites
Authors:
Ongira Chowdhury,
Joseph P. Feser
Abstract:
In this work, a Landauer approach enabled by the Frequency Domain Perfectly Matched Layer Method (FDPML) is used to study phonon transport in a series of large 2D domains with randomly embedded nanoparticles over a wide range of nanoparticle loadings and wavelengths. The effect of nanoparticle packing density on the mean free path and localization length is characterized. We observe that in the Mi…
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In this work, a Landauer approach enabled by the Frequency Domain Perfectly Matched Layer Method (FDPML) is used to study phonon transport in a series of large 2D domains with randomly embedded nanoparticles over a wide range of nanoparticle loadings and wavelengths. The effect of nanoparticle packing density on the mean free path and localization length is characterized. We observe that in the Mie scattering regime, the independent scattering approximation is valid up to volume fractions exceeding 10% and often higher depending on scattering parameter, indicating the mean free path can usually be calculated much less expensively using the number density and the scattering cross-section of a single scatterer. We also study localization lengths and their dependence on particle loading. In the case of heavy particles in a lighter matrix, we have been able to observe localization only at volume fractions >30% using the Landauer approach and only for high frequency modes, exceeding the vibration frequencies of the embedded nanoparticles. Using modal analysis we show that localization in nanoparticle laden materials is primarily due to energetic confinement rather than Anderson localization. Subsequently, we show that by using light particles in a heavy matrix the fraction of confined modes can be substantially increased.
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Submitted 2 February, 2022;
originally announced February 2022.
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Deductive Optimization of Relational Data Storage
Authors:
John K. Feser,
Samuel Madden,
Nan Tang,
Armando Solar-Lezama
Abstract:
Optimizing the physical data storage and retrieval of data are two key database management problems. In this paper, we propose a language that can express a wide range of physical database layouts, going well beyond the row- and column-based methods that are widely used in database management systems. We use deductive synthesis to turn a high-level relational representation of a database query int…
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Optimizing the physical data storage and retrieval of data are two key database management problems. In this paper, we propose a language that can express a wide range of physical database layouts, going well beyond the row- and column-based methods that are widely used in database management systems. We use deductive synthesis to turn a high-level relational representation of a database query into a highly optimized low-level implementation which operates on a specialized layout of the dataset. We build a compiler for this language and conduct experiments using a popular database benchmark, which shows that the performance of these specialized queries is competitive with a state-of-the-art in memory compiled database system.
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Submitted 5 February, 2020; v1 submitted 7 March, 2019;
originally announced March 2019.
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LATE Ain'T Earley: A Faster Parallel Earley Parser
Authors:
Willow Ahrens,
John Feser,
Robin Hui
Abstract:
We present the LATE algorithm, an asynchronous variant of the Earley algorithm for parsing context-free grammars. The Earley algorithm is naturally task-based, but is difficult to parallelize because of dependencies between the tasks. We present the LATE algorithm, which uses additional data structures to maintain information about the state of the parse so that work items may be processed in an…
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We present the LATE algorithm, an asynchronous variant of the Earley algorithm for parsing context-free grammars. The Earley algorithm is naturally task-based, but is difficult to parallelize because of dependencies between the tasks. We present the LATE algorithm, which uses additional data structures to maintain information about the state of the parse so that work items may be processed in any order. This property allows the LATE algorithm to be sped up using task parallelism. We show that the LATE algorithm can achieve a 120x speedup over the Earley algorithm on a natural language task.
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Submitted 15 July, 2018;
originally announced July 2018.
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Predictive design and experimental realization of InAs/GaAs superlattices with tailored thermal conductivity
Authors:
J. Carrete,
B. Vermeersch,
L. Thumfart,
R. R. Kakodkar,
G. Trevisi,
P. Frigeri,
L. Seravalli,
J. P. Feser,
A. Rastelli,
N. Mingo
Abstract:
We demonstrate an ab-initio predictive approach to computing the thermal conductivity ($κ$) of InAs/GaAs superlattices (SLs) of varying period, thickness, and composition. Our new experimental results illustrate how this method can yield good agreement with experiment when realistic composition profiles are used as inputs for the theoretical model. Due to intrinsic limitations to the InAs thicknes…
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We demonstrate an ab-initio predictive approach to computing the thermal conductivity ($κ$) of InAs/GaAs superlattices (SLs) of varying period, thickness, and composition. Our new experimental results illustrate how this method can yield good agreement with experiment when realistic composition profiles are used as inputs for the theoretical model. Due to intrinsic limitations to the InAs thickness than can be grown, bulk-like SLs show limited sensitivity to the details of their composition profile, but the situation changes significantly when finite-thickness effects are considered. If In segregation could be minimized during the growth process, SLs with significantly higher $κ$ than that of the random alloy with the same composition would be obtained, with the potential to improve heat dissipation in InAs/GaAs-based devices.
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Submitted 10 October, 2017;
originally announced October 2017.
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Differentiable Functional Program Interpreters
Authors:
John K. Feser,
Marc Brockschmidt,
Alexander L. Gaunt,
Daniel Tarlow
Abstract:
Programming by Example (PBE) is the task of inducing computer programs from input-output examples. It can be seen as a type of machine learning where the hypothesis space is the set of legal programs in some programming language. Recent work on differentiable interpreters relaxes the discrete space of programs into a continuous space so that search over programs can be performed using gradient-bas…
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Programming by Example (PBE) is the task of inducing computer programs from input-output examples. It can be seen as a type of machine learning where the hypothesis space is the set of legal programs in some programming language. Recent work on differentiable interpreters relaxes the discrete space of programs into a continuous space so that search over programs can be performed using gradient-based optimization. While conceptually powerful, so far differentiable interpreter-based program synthesis has only been capable of solving very simple problems. In this work, we study modeling choices that arise when constructing a differentiable programming language and their impact on the success of synthesis. The main motivation for the modeling choices comes from functional programming: we study the effect of memory allocation schemes, immutable data, type systems, and built-in control-flow structures. Empirically we show that incorporating functional programming ideas into differentiable programming languages allows us to learn much more complex programs than is possible with existing differentiable languages.
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Submitted 2 March, 2017; v1 submitted 7 November, 2016;
originally announced November 2016.
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Thermal Transport Across Metal Silicide-Silicon Interfaces: First-Principles Calculations and Green's Function Transport Simulations
Authors:
Sridhar Sadasivam,
Ning Ye,
James Charles,
Kai Miao,
Joseph P. Feser,
Tillmann Kubis,
Timothy S. Fisher
Abstract:
In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi$_2$-Si interfaces. An important development in the present work is t…
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In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi$_2$-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used `mixing rules' to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi$_2$-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with predictions that include all transport processes: elastic and inelastic phonon scattering, electron-phonon coupling in the metal, and electron-phonon coupling across the interface.
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Submitted 12 January, 2017; v1 submitted 10 September, 2016;
originally announced September 2016.
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Thermal Transport Across Metal Silicide-Silicon Interfaces: An Experimental Comparison between Epitaxial and Non-epitaxial Interfaces
Authors:
Ning Ye,
Joseph P Feser,
Sridhar Sadasivam,
Timothy S. Fisher,
Tianshi Wang,
Chaoying Ni,
Anderson Janotti
Abstract:
Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi$_2$, CoSi$_2$, NiSi and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most si…
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Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi$_2$, CoSi$_2$, NiSi and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no difference in the thermal interface conductance of epitaxial and non-epitaxial silicide/silicon interfaces. The effect of substrate carrier concentration is also investigated over a wide range of p- and n-type doping, and is found to be independent of carrier concentration, regardless of whether the interface is epitaxial and regardless of silicide type. In the case of epitaxial CoSi$_2$, a comparison of temperature dependant experimental data is made with two detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. At temperatures above 100K, the AGF approach greatly underpredicts the CoSi$_2$ data, while the DMM prediction matches the data well. The full-dispersion DMM is also found to closely predict the experimentally observed temperature-dependent interface conductance for epitaxial NiSi/Si and non-epitaxial TiSi$_2$/Si interfaces. In the case of epitaxial PtSi/Si interfaces, full dispersion DMM significantly overpredicts the experimental data.
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Submitted 26 January, 2017; v1 submitted 6 September, 2016;
originally announced September 2016.
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Probing the validity of the diffuse mismatch model for phonons using atomistic simulations
Authors:
Rohit R. Kakodkar,
Joseph P Feser
Abstract:
Due to it's simplicity the diffuse mismatch model (DMM) remains a popular description of phonon transmission across solid-solid boundaries. However, it remains unclear in which situations the DMM should be expected to be a valid model of the underlying physics. Here, its validity is investigated mode-by-mode using a 3-dimensional extension of the frequency domain, perfectly matched layer (FD-PML)…
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Due to it's simplicity the diffuse mismatch model (DMM) remains a popular description of phonon transmission across solid-solid boundaries. However, it remains unclear in which situations the DMM should be expected to be a valid model of the underlying physics. Here, its validity is investigated mode-by-mode using a 3-dimensional extension of the frequency domain, perfectly matched layer (FD-PML) method, to study the interface between face-centered cubic solids with interdiffused atoms. While submonolayer levels of interdiffusion are found to increase the number of available modes for transmission, consistent qualitatively with the DMM, we do not find quantitative or qualitative convergence toward the DMM at higher levels of interdiffusion. In particular, contrary to the fundamental assumption of the DMM, modes are not found to lose memory of their initial polarization and wavevector. The transmission coefficients of randomly interdiffused and smoothly-graded interfaces are also compared. While smoothly graded interfaces show strong anti-reflection properties, selection rules still prohibit transmission of many modes, whereas interdiffused interfaces are not subject to such rules and achieve similar thermal interface conductance by transmitting with lower probability but using a wider range of modes.
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Submitted 16 January, 2017; v1 submitted 28 July, 2016;
originally announced July 2016.
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A framework for solving atomistic phonon-structure scattering problems in the frequency domain using Perfectly Matched Layer boundaries
Authors:
Rohit R. Kakodkar,
Joseph P. Feser
Abstract:
We present a numerical approach to the solution of elastic phonon scattering problems based on a frequency domain decomposition of the atomistic equations of motion and the use of perfectly matched layer or PML boundaries. Unlike MD wavepacket analysis, the current approach has the ability to simulate scattering from individual phonon modes, including wavevectors in highly dispersive regimes. Like…
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We present a numerical approach to the solution of elastic phonon scattering problems based on a frequency domain decomposition of the atomistic equations of motion and the use of perfectly matched layer or PML boundaries. Unlike MD wavepacket analysis, the current approach has the ability to simulate scattering from individual phonon modes, including wavevectors in highly dispersive regimes. Like the Atomistic Green's Function method, the technique reduces scattering problems to a system of linear algebraic equations via a sparse, banded matrix. However, the use of PML boundaries enables rapid absorption of scattered wave energies at the boundaries, and provides a simple and inexpensive interpretation of the scattered phonon energy flux calculated from the energy dissipation rate in the PML. The accuracy of the method is demonstrated on connected monoatomic chains, for which an analytic solution is known. The parameters defining the PML are found to affect the performance and guidelines for selecting optimal parameters are given. The method is used to study the energy transmission coefficient for connected diatomic chains over all available wavevectors for both optical and longitudinal phonons; it is found that when there is discontinuity between sublattices, even connected chains of equivalent acoustic impedence have near-zero transmission coefficient for short wavelengths. The phonon scattering cross section of an embedded nanocylinder is calculated for a wide range of frequencies to demonstrate the extension of the method to high dimensions. The calculations match continuum theory for long wavelength phonons and large cylinder radii, but otherwise show complex physics including Mie oscillations which terminate when incident phonon frequencies exceeds the maximum available frequency in the embedded nanocylinder, and scattering efficiencies larger than two near the Brillouin zone edge.
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Submitted 18 August, 2015; v1 submitted 9 June, 2015;
originally announced June 2015.
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Compositionally-modulated Si1-xGex multilayers with cross-plane thermal conductivity below the thin-film alloy limit
Authors:
Peixuan Chen,
N. A. Katcho,
J. P. Feser,
Wu Li,
M. Glaser,
O. G. Schmidt,
David G. Cahill,
N. Mingo,
A. Rastelli
Abstract:
We describe epitaxial Ge/Si multilayers with cross-plane thermal conductivities which can be systematically reduced to exceptionally low values, as compared both with bulk and thin-film SiGe alloys of the same average concentration, by simply changing the thicknesses of the constituent layers. Ab initio calculations reveal that partial interdiffusion of Ge into the Si spacers, which naturally resu…
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We describe epitaxial Ge/Si multilayers with cross-plane thermal conductivities which can be systematically reduced to exceptionally low values, as compared both with bulk and thin-film SiGe alloys of the same average concentration, by simply changing the thicknesses of the constituent layers. Ab initio calculations reveal that partial interdiffusion of Ge into the Si spacers, which naturally results from Ge segregation during growth, plays a determinant role, lowering the thermal conductivity below what could be achieved without interdiffusion (perfect superlattice), or with total interdiffusion (alloy limit). This phenomenon is similar to the one previously observed in alloys with embedded nanoparticles, and it stresses the importance of combining alloy and nanosized scatterers simultaneously to minimize thermal conductivity. Our calculations thus suggest that superlattices with sharp interfaces, which are commonly sought but difficult to realize, are worse than compositionally-modulated Si1-xGex multilayers in the search for materials with ultralow thermal conductivities.
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Submitted 3 January, 2013;
originally announced January 2013.