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Magnetoelectric coupling at the domain level in polycrystalline ErMnO3
Authors:
J. Schultheiß,
L. Puntigam,
M. Winkler,
S. Krohns,
D. Meier,
H. Das,
D. M. Evans,
I. Kézsmárki
Abstract:
We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the topologically protected ferroelectric domain structure induced by the magnetic field. These alterations likely result from strain induced by the magnetic field, f…
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We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the topologically protected ferroelectric domain structure induced by the magnetic field. These alterations likely result from strain induced by the magnetic field, facilitated by intergranular coupling in polycrystalline multiferroics. Our findings give insights into the interplay between electric and magnetic properties at the local scale and represent a so far unexplored pathway for manipulating topologically protected ferroelectric vortex patterns in hexagonal manganites.
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Submitted 19 March, 2024;
originally announced March 2024.
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Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering
Authors:
L. Zhou,
L. Puntigam,
P. Lunkenheimer,
E. Bourret,
Z. Yan,
I. Kézsmárki,
D. Meier,
S. Krohns,
J. Schultheiß,
D. M. Evans
Abstract:
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls in ferroelectrics can act as such barriers. One advantage domain walls have, in comparison to stationary interfaces, is that they can be moved, offering the pote…
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A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls in ferroelectrics can act as such barriers. One advantage domain walls have, in comparison to stationary interfaces, is that they can be moved, offering the potential of post-synthesis control of the dielectric constant. However, to date, direct imaging of how changes in domain wall pattern cause a change in dielectric constant within a single sample has not been realized. In this work, we demonstrate that changing the domain wall density allows the engineering of the dielectric constant in hexagonal-ErMnO3 single crystals. The changes of the domain wall density are quantified via microscopy techniques, while the dielectric constant is determined via macroscopic dielectric spectroscopy measurements. The observed changes in the dielectric constant are quantitatively consistent with the observed variation in domain wall density, implying that the insulating domain walls behave as 'ideal' capacitors connected in series. Our approach to engineer the domain wall density can be readily extended to other control methods, e.g., electric fields or mechanical stresses, providing a novel degree of flexibility to in-situ tune the dielectric constant.
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Submitted 19 January, 2024;
originally announced January 2024.
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Direct imaging of spatial heterogeneities in type II superconductors
Authors:
Donald M. Evans,
Michele Conroy,
Lukas Puntigam,
Dorina Croitori,
Lilian Prodan,
James O. Douglas,
Baptiste Gault,
Vladimir Tsurkan
Abstract:
Understanding the exotic properties of quantum materials, including high-temperature superconductors, remains a formidable challenge that demands direct insights into electronic conductivity. Current methodologies either capture a bulk average or near-atomically-resolved information, missing direct measurements at the critical intermediate length scales. Here, using the superconductor Fe(Se,Te) as…
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Understanding the exotic properties of quantum materials, including high-temperature superconductors, remains a formidable challenge that demands direct insights into electronic conductivity. Current methodologies either capture a bulk average or near-atomically-resolved information, missing direct measurements at the critical intermediate length scales. Here, using the superconductor Fe(Se,Te) as a model system, we use low-temperature conductive atomic force microscopy (cAFM) to bridge this gap. Contrary to the uniform superconductivity anticipated from bulk assessments, cAFM uncovers micron-scale conductive intrusions within a relatively insulating matrix. Subsequent compositional mapping through atom probe tomography, shows that differences in conductivity correlated with local changes in composition. cAFM, supported by advanced microscopy and microanalysis, represents a methodological breakthrough that can be used to navigate the intricate landscape of high-temperature superconductors and the broader realm of quantum materials. Such fundamental information is critical for theoretical understanding and future guided design.
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Submitted 30 October, 2023;
originally announced October 2023.
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Woolf et als GWAS by subtraction is not useful for cross-generational Mendelian randomization studies
Authors:
David M Evans,
George Davey Smith,
Gunn-Helen Moen
Abstract:
Mendelian randomization (MR) is an epidemiological method that can be used to strengthen causal inference regarding the relationship between a modifiable environmental exposure and a medically relevant trait and to estimate the magnitude of this relationship1. Recently, there has been considerable interest in using MR to examine potential causal relationships between parental phenotypes and outcom…
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Mendelian randomization (MR) is an epidemiological method that can be used to strengthen causal inference regarding the relationship between a modifiable environmental exposure and a medically relevant trait and to estimate the magnitude of this relationship1. Recently, there has been considerable interest in using MR to examine potential causal relationships between parental phenotypes and outcomes amongst their offspring. In a recent issue of BMC Research Notes, Woolf et al (2023) present a new method, GWAS by subtraction, to derive genome-wide summary statistics for paternal smoking and other paternal phenotypes with the goal that these estimates can then be used in downstream (including two sample) MR studies. Whilst a potentially useful goal, Woolf et al. (2023) focus on the wrong parameter of interest for useful genome-wide association studies (GWAS) and downstream cross-generational MR studies, and the estimator that they derive is neither efficient nor appropriate for such use.
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Submitted 28 August, 2023;
originally announced August 2023.
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Large ordered moment with strong easy-plane anisotropy and vortex-domain pattern in the kagome ferromagnet Fe$_3$Sn
Authors:
Lilian Prodan,
Donald M. Evans,
Sinéad M. Griffin,
Andreas Östlin,
Markus Altthaler,
Erik Lysne,
Irina G. Filippova,
Serghei Shova,
Liviu Chioncel,
Vladimir Tsurkan,
István Kézsmárki
Abstract:
We report the structural and magnetic properties of high-quality bulk single crystals of the kagome ferromagnet Fe$_3$Sn. The dependence of magnetisation on the magnitude and orientation of the external field reveals strong easy-plane type uniaxial magnetic anisotropy, which shows a monotonous increase from $K_1=-0.99\times 10^6 J/m^3$ at 300\,K to $-1.23\times10^6 J/m^3$ at 2\,K. Our \textit{ab i…
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We report the structural and magnetic properties of high-quality bulk single crystals of the kagome ferromagnet Fe$_3$Sn. The dependence of magnetisation on the magnitude and orientation of the external field reveals strong easy-plane type uniaxial magnetic anisotropy, which shows a monotonous increase from $K_1=-0.99\times 10^6 J/m^3$ at 300\,K to $-1.23\times10^6 J/m^3$ at 2\,K. Our \textit{ab initio} electronic structure calculations yield the value of total magnetic moment of about 6.9 $μ_B$/f.u. and a magnetocrystalline anisotropy energy density of 0.406\,meV/f.u. ($1.16\times10^6 J/m^3$) both being in good agreement with the experimental values. The self-consistent DFT computations for the components of the spin/orbital moments indicate that the small difference between the saturation magnetisations measured along and perpendicular to the kagome layers results from the subtle balance between the Fe and Sn spin/orbital moments on the different sites. In zero field, magnetic force microscopy reveals micrometer-scale magnetic vortices with weakly pinned cores that vanish at $\sim$3\,T applied perpendicular to the kagome plane. Our micromagnetic simulations, using the experimentally determined value of anisotropy, well reproduce the observed vortex-domain structure. The present study, in comparison with the easy-axis ferromagnet Fe$_3$Sn$_2$, shows that varying the stacking of kagome layers provides an efficient control over magnetic anisotropy in this family of Fe-based kagome magnets.
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Submitted 6 February, 2023;
originally announced February 2023.
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Strain driven conducting domain walls in a Mott insulator
Authors:
L. Puntigam,
M. Altthaler,
S. Ghara,
L. Prodan,
V. Tsurkan,
S. Krohns,
I. Kézsmárki,
D. M. Evans
Abstract:
Rewritable nanoelectronics offers new perspectives and potential to both fundamental research and technological applications. Such interest has driven the research focus into conducting domain walls: pseudo 2D conducting channels that can be created, positioned, and deleted in situ. However, the study of conductive domain walls is largely limited to wide-gap ferroelectrics, where the conductivity…
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Rewritable nanoelectronics offers new perspectives and potential to both fundamental research and technological applications. Such interest has driven the research focus into conducting domain walls: pseudo 2D conducting channels that can be created, positioned, and deleted in situ. However, the study of conductive domain walls is largely limited to wide-gap ferroelectrics, where the conductivity typically arises from changes in charge carrier density, due to screening charge accumulation at polar discontinuities. This work shows that, in narrow-gap correlated insulators with strong charge lattice coupling, local strain gradients can drive enhanced conductivity at the domain walls, removing polar discontinuities as a criteria for conductivity. By combining different scanning probe microscopy techniques, we demonstrate that the domain wall conductivity in GaV4S8 does not follow the established screening charge model but rather arises from the large surface reconstruction across the Jahn-Teller transition and the associated strain gradients across the domain walls. This mechanism can turn any structural, or even magnetic, domain wall conducting, if the electronic structure of the host is susceptible to local strain gradients, drastically expanding the range of materials and phenomena that may be applicable to domain wall based nanoelectronics.
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Submitted 27 April, 2022;
originally announced April 2022.
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Resolving structural changes and symmetry lowering in spinel FeCr2S4
Authors:
Donald M. Evans,
Ola G. Grendal,
Lilian Prodan,
Maximilian Winkler,
Noah Winterhalter-Stocker,
Philipp Gegenwart,
Somnath Ghara,
Joachim Deisenhofer,
István Kézsmárki,
Vladimir Tsurkan
Abstract:
The cubic spinel FeCr2S4 has been receiving immense research interest because of its emergent phases and the interplay of spin, orbital and lattice degrees of freedom. Despite the intense research, several fundamental questions are yet to be answered, such as the refinement of the crystal structure in the different magnetic and orbital ordered phases. Here, using high-resolution synchrotron powder…
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The cubic spinel FeCr2S4 has been receiving immense research interest because of its emergent phases and the interplay of spin, orbital and lattice degrees of freedom. Despite the intense research, several fundamental questions are yet to be answered, such as the refinement of the crystal structure in the different magnetic and orbital ordered phases. Here, using high-resolution synchrotron powder diffraction on stoichiometric crystals of FeCr2S4 we resolved the long sought-after cubic to tetragonal transition at ~65 K, reducing the lattice symmetry to I41/amd. With further lowering the temperature, at ~9 K, the crystal structure becomes polar, hence the compound becomes multiferroic. The elucidation of the lattice symmetry throughout different phases of FeCr2S4 provides a basis for the understanding this enigmatic system and also highlights the importance of structural deformation in correlated materials.
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Submitted 1 March, 2022;
originally announced March 2022.
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Higher amalgamation properties in measured structures
Authors:
David M. Evans
Abstract:
Using an infinitary version of the Hypergraph Removal Lemma due to Towsner, we prove a model-theoretic higher amalgamation result. In particular, we obtain an independent amalgamation property which holds in structures which are measurable in the sense of Macpherson and Steinhorn, but which is not generally true in structures which are supersimple of finite SU-rank. We use this to show that some o…
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Using an infinitary version of the Hypergraph Removal Lemma due to Towsner, we prove a model-theoretic higher amalgamation result. In particular, we obtain an independent amalgamation property which holds in structures which are measurable in the sense of Macpherson and Steinhorn, but which is not generally true in structures which are supersimple of finite SU-rank. We use this to show that some of Hrushovski's non-locally-modular, supersimple $ω$-categorical structures are not MS-measurable.
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Submitted 14 July, 2022; v1 submitted 21 February, 2022;
originally announced February 2022.
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Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation
Authors:
Erik D. Roede,
Aleksander B. Mosberg,
Donald M. Evans,
Edith Bourret,
Zewu Yan,
Antonius T. J. van Helvoort,
Dennis Meier
Abstract:
Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO$_3$. Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals…
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Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO$_3$. Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The electric field response of sub-surface domains is studied by FIB cross-sectioning, revealing the 3D switching behavior. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D.
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Submitted 1 December, 2020;
originally announced December 2020.
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Effect of pseudo-cubic (111)-oriented orthorhombic substrate facets on perovskite oxide thin film synthesis
Authors:
K. Kjærnes,
T. Bolstad,
D. M. Evans,
E. Lysne,
B. A. D. Williamson,
D. Meier,
S. M. Selbach,
T. Tybell
Abstract:
Strain engineering with different substrate facets is promising for tuning functional properties of thin film perovskite oxides. By choice of facet, different surface symmetries and chemical bond directions for epitaxial interfaces can be tailored. Here, preparation of well-defined pseudo-cubic (111)-oriented orthorhombic substrates of DyScO3 , GdScO3 , and NdGaO3 is reported. The choice of orthor…
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Strain engineering with different substrate facets is promising for tuning functional properties of thin film perovskite oxides. By choice of facet, different surface symmetries and chemical bond directions for epitaxial interfaces can be tailored. Here, preparation of well-defined pseudo-cubic (111)-oriented orthorhombic substrates of DyScO3 , GdScO3 , and NdGaO3 is reported. The choice of orthorhombic facet, (011)o or (101)o , both corresponding to pseudo-cubic (111)pc , gives vicinal surfaces with single or double (111pc layer terrace step heights, respectively, impacting subsequent thin film growth. Orthorhombic LaFeO3 epitaxy on the (101)o facet reveals a distinction between alternating (111)pc layers, both during and after growth. The observed differences are explained based on the oxygen octahedral tilt pattern relative to the two orthorhombic (111)pc surfaces. This robust structural detail in the orthorhombic perovskite oxides enables utilisation of different (111)pc facets for property engineering, through polyhedral connectivity control and cation coordination at epitaxial interfaces.
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Submitted 25 November, 2020;
originally announced November 2020.
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Insulating improper ferroelectric domain walls as robust barrier layer capacitors
Authors:
Lukas Puntigam,
Jan Schultheiß,
Ana Strinic,
Zewu Yan,
Edith Bourret,
Markus Altthaler,
Istvan Kezsmarki,
Donald M. Evans,
Dennis Meier,
Stephan Krohns
Abstract:
We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second o…
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We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second one relates to an internal barrier layer capacitance (BLC). The calculated volume fraction of the internal BLC (of 8 %) is in good agreement with the observed volume fraction of insulating domain walls (DWs). While it is established that insulating DWs can give rise to high dielectric constants, studies typically focused on proper ferroelectrics where electric fields can remove the DWs. In h-ErMnO$_3$, by contrast, the insulating DWs are topologically protected, facilitating operation under substantially higher electric fields. Our findings provide the basis for a conceptually new approach to engineer materials exhibiting colossal dielectric permittivities using domain walls in improper ferroelecctrics with potential applications in electroceramic capacitors.
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Submitted 20 November, 2020;
originally announced November 2020.
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Controlling local resistance via electric-field induced dislocations
Authors:
D. M. Evans,
D. R. Småbråten,
T. S. Holstad,
P. E. Vullum,
A. B. Mosberg,
Z. Yan,
E. Bourret,
A. T. J. Van Helvoort,
S. M. Selbach,
D. Meier
Abstract:
Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations…
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Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations is usually achieved via strain fields, applied either during growth [9,10] or retrospectively via deformation, e.g., (nano [11-14])-indentation [15]. Here we show how partial dislocations can be induced using local electric fields, altering the structure and electronic response of the material where the field is applied. By combining high-resolution imaging techniques and density functional theory calculations, we directly image these dislocations in the ferroelectric hexagonal manganite Er(Ti,Mn)O3 and study their impact on the local electric transport behaviour. The use of an electric field to induce partial dislocations is a conceptually new approach to the burgeoning field of emergent defect-driven phenomena and enables local property control without the need of external macroscopic strain fields. This control is an important step towards integrating and functionalising dislocations in practical devices for future oxide electronics.
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Submitted 26 June, 2020;
originally announced June 2020.
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Simplicity of the automorphism groups of generalised metric spaces
Authors:
David M. Evans,
Jan Hubička,
Matěj Konečný,
Yibei Li,
Martin Ziegler
Abstract:
Tent and Ziegler proved that the automorphism group of the Urysohn sphere is simple and that the automorphism group of the Urysohn space is simple modulo bounded automorphisms. A key component of their proof is the definition of a stationary independence relation (SIR). In this paper we prove that the existence of a SIR satisfying some extra axioms is enough to prove simplicity of the automorphism…
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Tent and Ziegler proved that the automorphism group of the Urysohn sphere is simple and that the automorphism group of the Urysohn space is simple modulo bounded automorphisms. A key component of their proof is the definition of a stationary independence relation (SIR). In this paper we prove that the existence of a SIR satisfying some extra axioms is enough to prove simplicity of the automorphism group of a countable structure. The extra axioms are chosen with applications in mind, namely homogeneous structures which admit a "metric-like amalgamation", for example all primitive 3-constrained metrically homogeneous graphs of finite diameter from Cherlin's list.
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Submitted 3 April, 2021; v1 submitted 30 July, 2019;
originally announced July 2019.
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Higher amalgamation properties in stable theories
Authors:
David M. Evans,
Jonathan Kirby,
Tim Zander
Abstract:
For a complete, stable theory $T$ we construct, in a reasonably canonical way, a related stable theory $T^*$ which has higher independent amalgamation properties over the algebraic closure of the empty-set. The theory $T^*$ is an algebraic cover of $T$ and we give an explicit description of the finite covers involved in the construction of $T^*$ from $T$. This follows an approach of E. Hrushovski.…
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For a complete, stable theory $T$ we construct, in a reasonably canonical way, a related stable theory $T^*$ which has higher independent amalgamation properties over the algebraic closure of the empty-set. The theory $T^*$ is an algebraic cover of $T$ and we give an explicit description of the finite covers involved in the construction of $T^*$ from $T$. This follows an approach of E. Hrushovski. If $T$ is almost strongly minimal with a $0$-definable strongly minimal set, then we show that $T^*$ has higher amalgamation over any algebraically closed subset.
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Submitted 8 May, 2018;
originally announced May 2018.
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Permutation monoids and MB-homogeneity for graphs and relational structures
Authors:
Thomas D. H. Coleman,
David M. Evans,
Robert D. Gray
Abstract:
In this paper, we investigate the connection between infinite permutation monoids and bimorphism monoids of first-order structures. Taking our lead from the study of automorphism groups of structures as infinite permutation groups and the more recent developments in the field of homomorphism-homogeneous structures, we establish a series of results that underline this connection. Of particular inte…
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In this paper, we investigate the connection between infinite permutation monoids and bimorphism monoids of first-order structures. Taking our lead from the study of automorphism groups of structures as infinite permutation groups and the more recent developments in the field of homomorphism-homogeneous structures, we establish a series of results that underline this connection. Of particular interest is the idea of MB-homogeneity; a relational structure $\mathcal{M}$ is MB-homogeneous if every monomorphism between finite substructures of $\mathcal{M}$ extends to a bimorphism of $\mathcal{M}$. The results in question include a characterisation of closed permutation monoids, a Fraïssé-like theorem for MB-homogeneous structures, and the construction of $2^{\aleph_0}$ pairwise non-isomorphic countable MB-homogeneous graphs. We prove that any finite group arises as the automorphism group of some MB-homogeneous graph and use this to construct oligomorphic permutation monoids with any given finite group of units. We also consider MB-homogeneity for various well-known examples of homogeneous structures and in particular give a complete classification of countable homogeneous undirected graphs that are also MB-homogeneous.
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Submitted 11 February, 2019; v1 submitted 12 February, 2018;
originally announced February 2018.
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Automorphism groups and Ramsey properties of sparse graphs
Authors:
David M. Evans,
Jan Hubička,
Jaroslav Nešetřil
Abstract:
We study automorphism groups of sparse graphs from the viewpoint of topological dynamics and the Kechris, Pestov, Todorčević correspondence. We investigate amenable and extremely amenable subgroups of these groups using the space of orientations of the graph and results from structural Ramsey theory. Resolving one of the open questions in the area, we show that Hrushovski's example of an $ω$-categ…
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We study automorphism groups of sparse graphs from the viewpoint of topological dynamics and the Kechris, Pestov, Todorčević correspondence. We investigate amenable and extremely amenable subgroups of these groups using the space of orientations of the graph and results from structural Ramsey theory. Resolving one of the open questions in the area, we show that Hrushovski's example of an $ω$-categorical sparse graph has no $ω$-categorical expansion with extremely amenable automorphism group.
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Submitted 16 January, 2019; v1 submitted 3 January, 2018;
originally announced January 2018.
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Algorithms determining finite simple images of finitely presented groups
Authors:
Martin R. Bridson,
David M. Evans,
Martin W. Liebeck,
Dan Segal
Abstract:
We address the question: for which collections of finite simple groups does there exist an algorithm that determines the images of an arbitrary finitely presented group that lie in the collection? We prove both positive and negative results. For a collection of finite simple groups that contains infinitely many alternating groups, or contains classical groups of unbounded dimensions, we prove that…
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We address the question: for which collections of finite simple groups does there exist an algorithm that determines the images of an arbitrary finitely presented group that lie in the collection? We prove both positive and negative results. For a collection of finite simple groups that contains infinitely many alternating groups, or contains classical groups of unbounded dimensions, we prove that there is no such algorithm. On the other hand, for families of simple groups of Lie type of bounded rank, we obtain positive results. For example, given any fixed untwisted Lie type $X$ there is an algorithm that determines whether or not an arbitrary finitely presented group has infinitely many simple images isomorphic to $X(q)$ for some $q$, and if there are finitely many, the algorithm determines them.
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Submitted 19 October, 2017;
originally announced October 2017.
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Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO$_3$
Authors:
T. S. Holstad,
D. M. Evans,
A. Ruff,
D. R. Smaabraaten,
J. Schaab,
Ch. Tzschaschel,
Z. Yan,
E. Bourret,
S. M. Selbach,
S. Krohns,
D. Meier
Abstract:
Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti…
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Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti$^{4+}$. Density functional theory calculations show that Ti$^{4+}$ goes to the B-site, replacing Mn$^{3+}$. Scanning probe microscopy measurements confirm the robustness of the ferroelectric domain template. The electronic transport at both macro- and nanoscopic length scales is characterized. The measurements demonstrate the intrinsic nature of emergent domain wall currents and point towards Poole-Frenkel conductance as the dominant transport mechanism. Aside from the new insight into the electronic properties of hexagonal manganites, B-site doping adds an additional degree of freedom for tuning the domain wall functionality.
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Submitted 16 October, 2017;
originally announced October 2017.
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Ramsey properties and extending partial automorphisms for classes of finite structures
Authors:
David M. Evans,
Jan Hubička,
Jaroslav Nešetřil
Abstract:
We show that every free amalgamation class of finite structures with relations and (symmetric) partial functions is a Ramsey class when enriched by a free linear ordering of vertices. This is a common strengthening of the Nešetřil-Rödl Theorem and the second and third authors' Ramsey theorem for finite models (that is, structures with both relations and functions). We also find subclasses with the…
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We show that every free amalgamation class of finite structures with relations and (symmetric) partial functions is a Ramsey class when enriched by a free linear ordering of vertices. This is a common strengthening of the Nešetřil-Rödl Theorem and the second and third authors' Ramsey theorem for finite models (that is, structures with both relations and functions). We also find subclasses with the ordering property. For languages with relational symbols and unary functions we also show the extension property for partial automorphisms (EPPA) of free amalgamation classes. These general results solve several conjectures and provide an easy Ramseyness test for many classes of structures.
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Submitted 29 March, 2020; v1 submitted 5 May, 2017;
originally announced May 2017.
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Finite homogeneous geometries
Authors:
David M. Evans
Abstract:
This paper reproduces the text of a part of the Author's DPhil thesis. It gives a proof of the classification of non-trivial, finite homogeneous geometries of sufficiently high dimension which does not depend on the classification of the finite simple groups.
This paper reproduces the text of a part of the Author's DPhil thesis. It gives a proof of the classification of non-trivial, finite homogeneous geometries of sufficiently high dimension which does not depend on the classification of the finite simple groups.
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Submitted 18 January, 2017;
originally announced January 2017.
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Hydrodynamics of Domain Walls in Multiferroics: Impact on Memory Devices
Authors:
James F. Scott,
Donald M. Evans,
J. Marty Gregg,
Alexei Gruverman
Abstract:
We show that switching in ferroelectric lead germanate and lead iron tantalate zirconate titanate (PZTFT) does not resemble the equilibrium domain structure evolution of the Landau-Lifshitz-Kittel model but is instead highly nonequilibrium and similar, respectively, to the Richtmyer-Meshkov instability in liquids and the Helfrich-Hursault sliding instability in liquid crystals. The resulting nano-…
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We show that switching in ferroelectric lead germanate and lead iron tantalate zirconate titanate (PZTFT) does not resemble the equilibrium domain structure evolution of the Landau-Lifshitz-Kittel model but is instead highly nonequilibrium and similar, respectively, to the Richtmyer-Meshkov instability in liquids and the Helfrich-Hursault sliding instability in liquid crystals. The resulting nano-domain structures in PZTFT are circular or parabolic and involving folding bifurcations. These may have an undesirable impact on ferroelectric thin-film memoriesthat are also ferroelastic.
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Submitted 11 June, 2016;
originally announced June 2016.
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The Synthesis, Structure and Electronic Properties of a Lead-Free Hybrid Inorganic-Organic Double Perovskite (MA)2KBiCl6 (MA = methylammonium)
Authors:
Fengxia Wei,
Zeyu Deng,
Shijing Sun,
Fei Xie,
Gregor Kieslich,
Donald M. Evans,
Michael A. Carpenter,
Paul D. Bristowe,
Anthony K. Cheetham
Abstract:
In a search for Lead-free materials that could be used as alternatives to the hybrid perovskites,(MA)PbX3, in photovoltaic applications, we have discovered a hybrid double perovskite, (MA)2KBiCl6, which shows striking similarities to the lead analogues. Spectroscopic measurements and nanoindentation studies are combined with density functional calculations to reveal the properties of this interest…
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In a search for Lead-free materials that could be used as alternatives to the hybrid perovskites,(MA)PbX3, in photovoltaic applications, we have discovered a hybrid double perovskite, (MA)2KBiCl6, which shows striking similarities to the lead analogues. Spectroscopic measurements and nanoindentation studies are combined with density functional calculations to reveal the properties of this interesting system.
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Submitted 1 March, 2016;
originally announced March 2016.
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Infinite primitive and distance transitive directed graphs of finite out-valency
Authors:
Daniela Amato,
David M. Evans
Abstract:
We give certain properties which are satisfied by the descendant set of a vertex in an infinite, primitive, distance transitive digraph of finite out-valency and provide a strong structure theory for digraphs satisfying these properties. In particular, we show that there are only countably many possibilities for the isomorphism type of such a descendant set, thereby confirming a conjecture of the…
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We give certain properties which are satisfied by the descendant set of a vertex in an infinite, primitive, distance transitive digraph of finite out-valency and provide a strong structure theory for digraphs satisfying these properties. In particular, we show that there are only countably many possibilities for the isomorphism type of such a descendant set, thereby confirming a conjecture of the first Author. As a partial converse, we show that certain related conditions on a countable digraph are sufficient for it to occur as the descendant set of a primitive, distance transitive digraph.
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Submitted 12 May, 2014;
originally announced May 2014.
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Free actions of free groups on countable structures and property (T)
Authors:
David M. Evans,
Todor Tsankov
Abstract:
We show that if $G$ is a non-archimedean, Roelcke precompact, Polish group, then $G$ has Kazhdan's property (T). Moreover, if $G$ has a smallest open subgroup of finite index, then $G$ has a finite Kazhdan set. Examples of such $G$ include automorphism groups of countable $ω$-categorical structures, that is, the closed, oligomorphic permutation groups on a countable set. The proof uses work of the…
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We show that if $G$ is a non-archimedean, Roelcke precompact, Polish group, then $G$ has Kazhdan's property (T). Moreover, if $G$ has a smallest open subgroup of finite index, then $G$ has a finite Kazhdan set. Examples of such $G$ include automorphism groups of countable $ω$-categorical structures, that is, the closed, oligomorphic permutation groups on a countable set. The proof uses work of the second author on the unitary representations of such groups, together with a separation result for infinite permutation groups. The latter allows the construction of a non-abelian free subgroup of $G$ acting freely in all infinite transitive permutation representations of $G$.
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Submitted 2 September, 2015; v1 submitted 18 December, 2013;
originally announced December 2013.
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Simplicity of the automorphism groups of some Hrushovski constructions
Authors:
David M. Evans,
Zaniar Ghadernezhad,
Katrin Tent
Abstract:
We show that the automorphism groups of certain countable structures obtained using the Hrushovski amalgamation method are simple groups. The structures we consider are the 'uncollapsed' structures of infinite Morley rank obtained by the ab initio construction and the (unstable) omega-categorical pseudoplanes. The simplicity of the automorphism groups of these follows from results which generalize…
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We show that the automorphism groups of certain countable structures obtained using the Hrushovski amalgamation method are simple groups. The structures we consider are the 'uncollapsed' structures of infinite Morley rank obtained by the ab initio construction and the (unstable) omega-categorical pseudoplanes. The simplicity of the automorphism groups of these follows from results which generalize work of Lascar and of Tent and Ziegler.
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Submitted 2 September, 2015; v1 submitted 12 December, 2013;
originally announced December 2013.
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Matroid Theory and Hrushovski's Predimension Construction
Authors:
David M. Evans
Abstract:
We give an exposition of some results from matroid theory which characterise the finite pregeometries arising from Hrushovski's predimension construction. As a corollary, we observe that a finite pregeometry which satisfies Hrushovski's flatness condition arises from a predimension.
We give an exposition of some results from matroid theory which characterise the finite pregeometries arising from Hrushovski's predimension construction. As a corollary, we observe that a finite pregeometry which satisfies Hrushovski's flatness condition arises from a predimension.
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Submitted 19 May, 2011;
originally announced May 2011.
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Classification of some countable descendant-homogeneous digraphs
Authors:
Daniela Amato,
David M. Evans,
John K. Truss
Abstract:
For finite q, we classify the countable, descendant-homogeneous digraphs in which the descendant set of any vertex is a q-valent tree. We also give conditions on a rooted digraph G which allow us to construct a countable descendant-homogeneous digraph in which the descendant set of any vertex is isomorphic to G.
For finite q, we classify the countable, descendant-homogeneous digraphs in which the descendant set of any vertex is a q-valent tree. We also give conditions on a rooted digraph G which allow us to construct a countable descendant-homogeneous digraph in which the descendant set of any vertex is isomorphic to G.
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Submitted 7 April, 2011;
originally announced April 2011.
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The geometry of Hrushovski constructions, I. The uncollapsed case
Authors:
David M. Evans,
Marco S. Ferreira
Abstract:
An intermediate stage in Hrushovski's construction of flat strongly minimal structures in a relational language L produces omega-stable structures of rank omega. We analyze the pregeometries given by forking on the regular type of rank omega in these structures. We show that varying L can affect the (local) isomorphism type of the pregeometry, but not its finite subpregeometries. A sequel will com…
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An intermediate stage in Hrushovski's construction of flat strongly minimal structures in a relational language L produces omega-stable structures of rank omega. We analyze the pregeometries given by forking on the regular type of rank omega in these structures. We show that varying L can affect the (local) isomorphism type of the pregeometry, but not its finite subpregeometries. A sequel will compare these to the pregeometries of the strongly minimal structures.
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Submitted 18 March, 2011;
originally announced March 2011.
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The geometry of Hrushovski constructions, II. The strongly minimal case
Authors:
David M. Evans,
Marco S. Ferreira
Abstract:
We investigate the isomorphism types of combinatorial geometries arising from Hrushovski's flat strongly minimal structures and answer some questions from Hrushovski's original paper.
We investigate the isomorphism types of combinatorial geometries arising from Hrushovski's flat strongly minimal structures and answer some questions from Hrushovski's original paper.
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Submitted 18 March, 2011;
originally announced March 2011.
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Second cohomology groups and finite covers
Authors:
David M. Evans,
Elisabetta Pastori
Abstract:
For D an infinite set, k>1 and W the set of k-sets from D, there is a natural closed permutation group G_k which is a non-split extension of \mathbb{Z}_2^W by \Sym(D). We classify the closed subgroups of G_k which project onto \Sym(D)$. The question arises in model theory as a problem about finite covers, but here we formulate and solve it in algebraic terms.
For D an infinite set, k>1 and W the set of k-sets from D, there is a natural closed permutation group G_k which is a non-split extension of \mathbb{Z}_2^W by \Sym(D). We classify the closed subgroups of G_k which project onto \Sym(D)$. The question arises in model theory as a problem about finite covers, but here we formulate and solve it in algebraic terms.
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Submitted 23 March, 2011; v1 submitted 2 September, 2009;
originally announced September 2009.
