Showing 1–6 of 6 results for author: Dienel, T

Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM

Authors: Jeremiah Croshaw, Thomas Dienel, Taleana Huff, Robert A. Wolkow

Abstract: The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation through precise desorption of surface hydrogen atoms. While samples with relatively large areas of the hydrogen terminated 2x1 surface are routinely created using an in-situ methodology, surface defects are inevitably form… ▽ More The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation through precise desorption of surface hydrogen atoms. While samples with relatively large areas of the hydrogen terminated 2x1 surface are routinely created using an in-situ methodology, surface defects are inevitably formed as well reducing the area available for patterning. Here, we present a catalog of several commonly found defects of the H-Si(100)-2x1 surface. By using a combination of scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM), we are able to extract useful information regarding the atomic and electronic structure of these defects. This allowed for the confirmation of literature assignments of several commonly found defects, as well as proposed classification of previously unreported and unassigned defects. By better understanding the structure and origin of these defects, we make the first steps toward enabling the creation of superior surfaces ultimately leading to more consistent and reliable fabrication of atom scale devices. △ Less

Submitted 21 February, 2020; originally announced February 2020.

Journal ref: Beilstein J. Nanotechnol. 2020, 11, 1346-1360

Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot

Authors: Taleana Huff, Thomas Dienel, Mohammad Rashidi, Roshan Achal, Lucian Livadaru, Jeremiah Croshaw, Robert A. Wolkow

Abstract: With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact… ▽ More With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highly-doped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain. That species, suspected of being boron or perhaps a negatively charged donor species, we suggest is of a character more consistent with either a negatively charged interstitial hydrogen or a hydrogen vacancy complex. △ Less

Submitted 17 June, 2019; v1 submitted 28 February, 2019; originally announced February 2019.

Journal ref: ACS Nano 13(9), 10566-10575 (2019)

SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits

Authors: Samuel Ng, Jacob Retallick, Hsi Nien Chiu, Robert Lupoiu, Mohammad Rashidi, Wyatt Vine, Thomas Dienel, Lucian Livadaru, Robert A. Wolkow, Konrad Walus

Abstract: This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational logic. Several simulation tools are included, each able to inform the designer on various aspects of their designs: a ground-state electron configuration finder, a non-equilibrium electron dynamics simulator, and an electri… ▽ More This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational logic. Several simulation tools are included, each able to inform the designer on various aspects of their designs: a ground-state electron configuration finder, a non-equilibrium electron dynamics simulator, and an electric potential landscape solver with clocking electrode support. Simulations have been compared against past experimental results to inform the electron population estimation and dynamic behavior. New logic gates suitable for this platform have been designed and simulated, and a clocked wire has been demonstrated. This work paves the way for the exploration of the vast and fertile design space of atomic silicon dangling bond quantum dot circuits. △ Less

Submitted 14 August, 2018; originally announced August 2018.

Journal ref: IEEE Transactions on Nanotechnology 19, 137 - 146 (2020)

Initiating and monitoring the evolution of single electrons within atom-defined structures

Authors: Mohammad Rashidi, Wyatt Vine, Thomas Dienel, Lucian Livadaru, Jacob Retallick, Taleana Huff, Konrad Walus, Robert Wolkow

Abstract: Using a non-contact atomic force microscope we track and manipulate the position of single electrons confined to atomic structures engineered from silicon dangling bonds (DBs) on the hydrogen terminated silicon surface. By varying the probe-sample separation we mechanically manipulate the equilibrium position of individual surface silicon atoms and use this to directly switch the charge state of i… ▽ More Using a non-contact atomic force microscope we track and manipulate the position of single electrons confined to atomic structures engineered from silicon dangling bonds (DBs) on the hydrogen terminated silicon surface. By varying the probe-sample separation we mechanically manipulate the equilibrium position of individual surface silicon atoms and use this to directly switch the charge state of individual DBs. Because this mechanism is based on short range interactions and can be performed without applied bias voltage, we maintain both site-specific selectivity and single-electron control. We extract the short range forces involved with this mechanism by subtracting the long range forces acquired on a dimer vacancy site. As a result of relaxation of the silicon lattice to accommodate negatively charged DBs we observe charge configurations of DB structures that remain stable for many seconds at 4.5 K. Subsequently we use charge manipulation to directly prepare the ground state and metastable charge configurations of DB structures composed of up to six atoms. △ Less

Submitted 29 May, 2018; v1 submitted 28 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. Lett. 121, 166801 (2018)

Binary Atomic Silicon Logic

Authors: Taleana Huff, Hatem Labidi, Mohammad Rashidi, Roshan Achal, Lucian Livadaru, Thomas Dienel, Jason Pitters, Robert A. Wolkow

Abstract: It has long been anticipated that the ultimate in miniature circuitry will be crafted of single atoms. Despite many advances made in scanned probe microscopy studies of molecules and atoms on surfaces, challenges with patterning and limited thermal stability have remained. Here we make progress toward those challenges and demonstrate rudimentary circuit elements through the patterning of dangling… ▽ More It has long been anticipated that the ultimate in miniature circuitry will be crafted of single atoms. Despite many advances made in scanned probe microscopy studies of molecules and atoms on surfaces, challenges with patterning and limited thermal stability have remained. Here we make progress toward those challenges and demonstrate rudimentary circuit elements through the patterning of dangling bonds on a hydrogen terminated silicon surface. Dangling bonds sequester electrons both spatially and energetically in the bulk band gap, circumventing short circuiting by the substrate. We deploy paired dangling bonds occupied by one movable electron to form a binary electronic building block. Inspired by earlier quantum dot-based approaches, binary information is encoded in the electron position allowing demonstration of a binary wire and an OR gate. △ Less

Submitted 19 June, 2018; v1 submitted 22 June, 2017; originally announced June 2017.

Journal ref: Nature Electronics 1(12), 636-643 (2018)

On-surface synthesis of graphene nanoribbons with zigzag edge topology

Authors: Pascal Ruffieux, Shiyong Wang, Bo Yang, Carlos Sanchez, Jia Liu, Thomas Dienel, Leopold Talirz, Prashant Shinde, Carlo A. Pignedoli, Daniele Passerone, Tim Dumslaff, Xinliang Feng, Klaus Muellen, Roman Fasel

Abstract: Graphene-based nanostructures exhibit a vast range of exciting electronic properties that are absent in extended graphene. For example, quantum confinement in carbon nanotubes and armchair graphene nanoribbons (AGNRs) leads to the opening of substantial electronic band gaps that are directly linked to their structural boundary conditions. Even more intriguing are nanostructures with zigzag edges,… ▽ More Graphene-based nanostructures exhibit a vast range of exciting electronic properties that are absent in extended graphene. For example, quantum confinement in carbon nanotubes and armchair graphene nanoribbons (AGNRs) leads to the opening of substantial electronic band gaps that are directly linked to their structural boundary conditions. Even more intriguing are nanostructures with zigzag edges, which are expected to host spin-polarized electronic edge states and can thus serve as key elements for graphene-based spintronics. The most prominent example is zigzag graphene nanoribbons (ZGNRs) for which the edge states are predicted to couple ferromagnetically along the edge and antiferromagnetically between them. So far, a direct observation of the spin-polarized edge states for specifically designed and controlled zigzag edge topologies has not been achieved. This is mainly due to the limited precision of current top-down approaches, which results in poorly defined edge structures. Bottom-up fabrication approaches, on the other hand, were so far only successfully applied to the growth of AGNRs and related structures. Here, we describe the successful bottom-up synthesis of ZGNRs, which are fabricated by the surface-assisted colligation and cyclodehydrogenation of specifically designed precursor monomers including carbon groups that yield atomically precise zigzag edges. Using scanning tunnelling spectroscopy we prove the existence of edge-localized states with large energy splittings. We expect that the availability of ZGNRs will finally allow the characterization of their predicted spin-related properties such as spin confinement and filtering, and ultimately add the spin degree of freedom to graphene-based circuitry. △ Less

Submitted 16 November, 2015; originally announced November 2015.

Comments: 15 pages, 4 figures