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Piezoresistive PtSe$_2$ pressure sensors with reliable high sensitivity and their integration into CMOS ASIC substrates
Authors:
Sebastian Lukas,
Nico Rademacher,
Sofía Cruces,
Michael Gross,
Eva Desgué,
Stefan Heiserer,
Nikolas Dominik,
Maximilian Prechtl,
Oliver Hartwig,
Cormac Ó Coileáin,
Tanja Stimpel-Lindner,
Pierre Legagneux,
Arto Rantala,
Juha-Matti Saari,
Miika Soikkeli,
Georg S. Duesberg,
Max C. Lemme
Abstract:
Membrane-based sensors are an important market for microelectromechanical systems (MEMS). Two-dimensional (2D) materials, with their low mass, are excellent candidates for suspended membranes to provide high sensitivity, small footprint sensors. The present work demonstrates pressure sensors employing large-scale-synthesized 2D platinum diselenide (PtSe${_2}$) films as piezoresistive membranes sup…
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Membrane-based sensors are an important market for microelectromechanical systems (MEMS). Two-dimensional (2D) materials, with their low mass, are excellent candidates for suspended membranes to provide high sensitivity, small footprint sensors. The present work demonstrates pressure sensors employing large-scale-synthesized 2D platinum diselenide (PtSe${_2}$) films as piezoresistive membranes supported only by a thin polymer layer. We investigate three different synthesis methods with contrasting growth parameters and establish a reliable high yield fabrication process for suspended PtSe${_2}$/PMMA membranes across sealed cavities. The pressure sensors reproducibly display sensitivities above 6 x 10${^4}$ kPa${^{-1}}$. We show that the sensitivity clearly depends on the membrane diameter and the piezoresistive gauge factor of the PtSe${_2}$ film. Reducing the total device size by decreasing the number of membranes within a device leads to a significant increase in the area-normalized sensitivity. This allows the manufacturing of pressure sensors with high sensitivity but a much smaller device footprint than the current state-of-the-art MEMS technology. We further integrate PtSe${_2}$ pressure sensors with CMOS technology, improving the technological readiness of PtSe${_2}$-based MEMS and NEMS devices.
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Submitted 6 September, 2024; v1 submitted 4 September, 2024;
originally announced September 2024.
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The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions
Authors:
Marin Tharrault,
Sabrine Ayari,
Mehdi Arfaoui,
Eva Desgué,
Romaric Le Goff,
Pascal Morfin,
José Palomo,
Michael Rosticher,
Sihem Jaziri,
Bernard Plaçais,
Pierre Legagneux,
Francesca Carosella,
Christophe Voisin,
Robson Ferreira,
Emmanuel Baudin
Abstract:
$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove inst…
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$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove instead that the optical absorption arises only from direct transitions. This understanding allows us to shed light on the semiconductor to semimetal transition and to explore the effect of stacking and excitons on the optical absorption.
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Submitted 7 August, 2024; v1 submitted 3 November, 2023;
originally announced November 2023.
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Raman spectroscopy of monolayer to bulk PtSe2 exfoliated crystals
Authors:
Marin Tharrault,
Eva Desgué,
Dominique Carisetti,
Bernard Plaçais,
Christophe Voisin,
Pierre Legagneux,
Emmanuel Baudin
Abstract:
Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on $\rm{PtSe_2}$, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a semi-metal with increasing layer number. While polycrystalline $\rm{PtSe_2}$ can be grown with various crystalline qualities, getting insight into the monocrystalline…
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Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on $\rm{PtSe_2}$, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a semi-metal with increasing layer number. While polycrystalline $\rm{PtSe_2}$ can be grown with various crystalline qualities, getting insight into the monocrystalline intrinsic properties remains challenging. We report on the study of exfoliated 1 to 10 layers $\rm{PtSe_2}$ by Raman spectroscopy, featuring record linewidth. The clear Raman signatures allow layer-thickness identification and provides a reference metrics to assess crystal quality of grown films.
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Submitted 12 February, 2024; v1 submitted 28 July, 2023;
originally announced July 2023.
