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Experimental verification of the treatment of time-dependent flux in circuit quantization
Authors:
Jacob Bryon,
D. K. Weiss,
Xinyuan You,
Sara Sussman,
Xanthe Croot,
Ziwen Huang,
Jens Koch,
Andrew Houck
Abstract:
Recent theoretical work has highlighted that quantizing a superconducting circuit in the presence of time-dependent flux $Φ(t)$ generally produces Hamiltonian terms proportional to $dΦ/dt$ unless a special allocation of the flux across inductive terms is chosen. Here, we present an experiment probing the effects of a fast flux ramp applied to a heavy-fluxonium circuit. The experiment confirms that…
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Recent theoretical work has highlighted that quantizing a superconducting circuit in the presence of time-dependent flux $Φ(t)$ generally produces Hamiltonian terms proportional to $dΦ/dt$ unless a special allocation of the flux across inductive terms is chosen. Here, we present an experiment probing the effects of a fast flux ramp applied to a heavy-fluxonium circuit. The experiment confirms that naïve omission of the $dΦ/dt$ term leads to theoretical predictions inconsistent with experimental data. Experimental data are fully consistent with recent theory that includes the derivative term or equivalently uses "irrotational variables" that uniquely allocate the flux to properly eliminate the $dΦ/dt$ term.
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Submitted 7 August, 2022;
originally announced August 2022.
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Split-Gate Cavity Coupler for Silicon Circuit Quantum Electrodynamics
Authors:
F. Borjans,
X. Croot,
S. Putz,
X. Mi,
S. M. Quinn,
A. Pan,
J. Kerckhoff,
E. J. Pritchett,
C. A. Jackson,
L. F. Edge,
R. S. Ross,
T. D. Ladd,
M. G. Borselli,
M. F. Gyure,
J. R. Petta
Abstract:
Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate…
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Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate $γ_c/2π$ = 36 MHz, and cavity decay rate $κ/2π$ = 1.2 MHz. The charge cavity coupling rate is in good agreement with device simulations. Our coupling technique can be extended to enable simultaneous coupling of multiple DQDs to the same cavity mode, opening the door to long-range coupling of semiconductor qubits using microwave frequency photons.
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Submitted 2 March, 2020;
originally announced March 2020.
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Long-Range Microwave Mediated Interactions Between Electron Spins
Authors:
F. Borjans,
X. G. Croot,
X. Mi,
M. J. Gullans,
J. R. Petta
Abstract:
Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance interconnects for spin qubits. Realizing a key milestone for spin-based quantum information processing, we demonstrate microwave-mediated spin-spin intera…
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Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance interconnects for spin qubits. Realizing a key milestone for spin-based quantum information processing, we demonstrate microwave-mediated spin-spin interactions between two electrons that are physically separated by more than 4 mm. Coherent spin-photon coupling is demonstrated for each individual spin using microwave transmission spectroscopy. An enhanced vacuum Rabi splitting is observed when both spins are tuned into resonance with the cavity, indicative of a coherent spin-spin interaction. Our results demonstrate that microwave-frequency photons can be used as a resource to generate long-range two-qubit gates between spatially separated spins.
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Submitted 2 May, 2019;
originally announced May 2019.
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Flopping-mode electric dipole spin resonance
Authors:
X. Croot,
X. Mi,
S. Putz,
M. Benito,
F. Borjans,
G. Burkard,
J. R. Petta
Abstract:
Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flopping-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge d…
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Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flopping-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low power electric dipole spin resonance. Through dispersive measurements of the single electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flopping-mode resonance, which should facilitate low power spin control in quantum dot arrays.
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Submitted 1 May, 2019;
originally announced May 2019.
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Electric-field control and noise protection of the flopping-mode spin qubit
Authors:
Monica Benito,
Xanthe Croot,
Christoph Adelsberger,
Stefan Putz,
Xiao Mi,
Jason R. Petta,
Guido Burkard
Abstract:
We propose and analyze a novel "flopping-mode" mechanism for electric dipole spin resonance based on the delocalization of a single electron across a double quantum dot confinement potential. Delocalization of the charge maximizes the electronic dipole moment compared to the conventional single dot spin resonance configuration. We present a theoretical investigation of the flopping-mode spin qubit…
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We propose and analyze a novel "flopping-mode" mechanism for electric dipole spin resonance based on the delocalization of a single electron across a double quantum dot confinement potential. Delocalization of the charge maximizes the electronic dipole moment compared to the conventional single dot spin resonance configuration. We present a theoretical investigation of the flopping-mode spin qubit properties through the crossover from the double to the single dot configuration by calculating effective spin Rabi frequencies and single-qubit gate fidelities. The flopping-mode regime optimizes the artificial spin-orbit effect generated by an external micromagnet and draws on the existence of an externally controllable sweet spot, where the coupling of the qubit to charge noise is highly suppressed. We further analyze the sweet spot behavior in the presence of a longitudinal magnetic field gradient, which gives rise to a second order sweet spot with reduced sensitivity to charge fluctuations.
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Submitted 26 August, 2019; v1 submitted 30 April, 2019;
originally announced April 2019.
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Device Architecture for Coupling Spin Qubits Via an Intermediate Quantum State
Authors:
X. G. Croot,
S. J. Pauka,
J. D. Watson,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and unloaded via tunneling to adjacent reservoirs, avoiding charge latch-up common in linear dot arrays. In a step towards realizing two-qubit entanglement based on…
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We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and unloaded via tunneling to adjacent reservoirs, avoiding charge latch-up common in linear dot arrays. In a step towards realizing two-qubit entanglement based on indirect exchange, the architecture permits precise control over tunnel rates between the singlet-triplet qubits and the intermediate state. We show that by separating qubits by 1 um, the residual capacitive coupling between them is reduced to 7 ueV.
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Submitted 20 July, 2017;
originally announced July 2017.
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Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment
Authors:
X. G. Croot,
S. J. Pauka,
H. Lu,
A. C. Gossard,
J. D. Watson,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and…
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We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and their readout sensors. Configuring a quantum point contact (QPC) as a localized emitter, we show how these charge pockets are activated by the relaxation of electrons tunneling through a barrier. The presence of charge pockets creates uncontrolled offsets in gate-bias and their thermal activation by on-chip tunnel currents suggests further sources of charge-noise that lead to decoherence in semiconductor qubits.
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Submitted 29 June, 2017;
originally announced June 2017.
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Frequency Multiplexing for Readout of Spin Qubits
Authors:
J. M. Hornibrook,
J. I. Colless,
A. C. Mahoney,
X. G. Croot,
S. Blanvillain,
H. Lu,
A. C. Gossard,
D. J. Reilly
Abstract:
We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realize dispersive gate-sensing in combination with charge detection based on two rf quantum point contacts (rf-QPCs). We apply this approach to perform multiplexed readout of a double quantum…
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We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realize dispersive gate-sensing in combination with charge detection based on two rf quantum point contacts (rf-QPCs). We apply this approach to perform multiplexed readout of a double quantum dot in the few-electron regime, and further demonstrate operation of a 10-channel multiplexing device. Limitations for scaling spin qubit readout to large numbers of multiplexed channels is discussed.
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Submitted 18 December, 2013;
originally announced December 2013.
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Stimulated Phonon Emission in a Driven Double Quantum Dot
Authors:
J. I. Colless,
X. G. Croot,
T. M. Stace,
A. C. Doherty,
S. D. Barrett,
H. Lu,
A. C. Gossard,
D. J. Reilly
Abstract:
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential…
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The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential hindrance for quantum computing architectures that can be charge-sensitive during certain operations. Here we examine phonon generation in a GaAs double dot, configured as a single- or two-electron charge qubit, and driven by the application of microwaves via surface gates. In a process that is a microwave analog of the Raman effect, stimulated phonon emission is shown to produce population inversion of a two-level system and provides spectroscopic signatures of the phononic environment created by the nanoscale device geometry.
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Submitted 25 May, 2013;
originally announced May 2013.