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Beyond-adiabatic Quantum Admittance of a Semiconductor Quantum Dot at High Frequencies: Rethinking Reflectometry as Polaron Dynamics
Authors:
L. Peri,
G. A. Oakes,
L. Cochrane,
C. J. B. Ford,
M. F. Gonzalez-Zalba
Abstract:
Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-cou…
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Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-coupled to a charge reservoir under the effect of a coherent photon bath. We find a general expression for the admittance that captures the well-known semiclassical (thermal) limit, along with the transition to lifetime and power broadening regimes due to the increased coupling to the reservoir and amplitude of the photonic drive, respectively. Furthermore, we describe two new photon-mediated regimes: Floquet broadening, determined by the dressing of the QD states, and broadening determined by photon loss in the system. Our results provide a method to simulate the high-frequency behaviour of QDs in a wide range of limits, describe past experiments, and propose novel explorations of QD-photon interactions.
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Submitted 18 March, 2024; v1 submitted 31 July, 2023;
originally announced July 2023.
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Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
Authors:
Felix-Ekkehard von Horstig,
David J. Ibberson,
Giovanni A. Oakes,
Laurence Cochrane,
David F. Wise,
Nadia Stelmashenko,
Sylvain Barraud,
Jason A. W. Robinson,
Frederico Martins,
M. Fernando Gonzalez-Zalba
Abstract:
Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge state readout at the state-of-the-art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing qu…
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Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge state readout at the state-of-the-art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing quantum dots (QDs) in a high-$κ$ nanowire transistor. The superconducting chiplet contains resonant and coupling elements as well as $LC$ filters that, when interfaced with the silicon chip, result in a resonant frequency $f=2.12$ GHz, a loaded quality factor $Q=850$, and a resonator impedance $Z=470$ $Ω$. Combined with the large gate lever arms of SOI technology, we achieve a minimum integration time for single and double QD transitions of 2.77 ns and 13.5 ns, respectively. We utilize the assembly to measure charge noise over 9 decades of frequency up to 500 kHz and find a 1/$f$ dependence across the whole frequency spectrum as well as a charge noise level of 4 $μ$eV/$\sqrt{\text{Hz}}$ at 1 Hz. The modular microwave circuitry presented here can be directly utilized in conjunction with other quantum device to improve the readout performance as well as enable large bandwidth noise spectroscopy, all without the complexity of superconductor-semiconductor monolithic fabrication.
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Submitted 2 May, 2024; v1 submitted 26 April, 2023;
originally announced April 2023.
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A quantum dot-based frequency multiplier
Authors:
G. A. Oakes,
L. Peri,
L. Cochrane,
F. Martins,
L. Hutin,
B. Bertrand,
M. Vinet,
A. Gomez Saiz,
C. J. B. Ford,
C. G. Smith,
M. F. Gonzalez-Zalba
Abstract:
Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance…
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Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance-voltage characteristics of quantum dot systems arising from their low-dimensional density of states. We implement the multiplier in a multi-gate silicon nanowire transistor using two complementary device configurations: a single quantum dot coupled to a charge reservoir and a coupled double quantum dot. We study the harmonic voltage conversion as a function of energy detuning, multiplication factor and harmonic phase noise and find near ideal performance up to a multiplication factor of 10. Our results demonstrate a method for high-frequency conversion that could be readily integrated into silicon-based quantum computing systems and be applied to other semiconductors.
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Submitted 25 November, 2022;
originally announced November 2022.
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Intrinsic Noise of the Single Electron Box
Authors:
Laurence Cochrane,
Ashwin A. Seshia,
M. Fernando Gonzalez Zalba
Abstract:
The radio-frequency Single-Electron Box is becoming an attractive charge sensor for semiconductor-based quantum computing devices due to its high sensitivity and small footprint, which facilitates the design of highly connected qubit architectures. However, an understanding of its ultimate sensitivity is missing due to the lack of a noise model. Here, we quantify the intrinsic noise of the Single-…
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The radio-frequency Single-Electron Box is becoming an attractive charge sensor for semiconductor-based quantum computing devices due to its high sensitivity and small footprint, which facilitates the design of highly connected qubit architectures. However, an understanding of its ultimate sensitivity is missing due to the lack of a noise model. Here, we quantify the intrinsic noise of the Single-Electron Box arising from stochastic cyclic electron tunnelling between a quantum dot and a reservoir driven by a periodic gate voltage. We use both a master equation formalism and Markov Monte Carlo simulations to calculate the gate noise current, and find the noise mechanism can be represented as a cyclostationary process. We consider the implications of this cyclostationary noise on the ultimate sensitivity of Single-Electron Box sensors for fast, high-fidelity readout of spin qubits, in particular evaluating results for radio-frequency reflectometry implementations and the backaction of the sensor on a qubit. Furthermore, we determine the conditions under which the intrinsic noise limit could be measured experimentally and techniques by which the noise can be suppressed to enhance qubit readout fidelity.
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Submitted 12 February, 2024; v1 submitted 29 September, 2022;
originally announced September 2022.
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Quantum Dot-Based Parametric Amplifiers
Authors:
Laurence Cochrane,
Theodor Lundberg,
David J. Ibberson,
Lisa Ibberson,
Louis Hutin,
Benoit Bertrand,
Nadia Stelmashenko,
Jason W. A. Robinson,
Maud Vinet,
Ashwin A. Seshia,
M. Fernando Gonzalez-Zalba
Abstract:
Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for p…
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Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for parametric amplification. We experimentally demonstrate phase-sensitive parametric amplification using a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8~GHz superconducting lumped-element microwave cavity, achieving parametric gains of -3 to +3 dB, limited by Sisyphus dissipation. Using a semi-classical model, we find an optimised design within current technological capabilities could achieve gains and bandwidths comparable to JPAs, while providing complementary specifications with respect to integration in semiconductor platforms or operation at higher magnetic fields.
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Submitted 2 December, 2021; v1 submitted 23 November, 2021;
originally announced November 2021.
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Large dispersive interaction between a CMOS double quantum dot and microwave photons
Authors:
David J. Ibberson,
Theodor Lundberg,
James A. Haigh,
Louis Hutin,
Benoit Bertrand,
Sylvain Barraud,
Chang-Min Lee,
Nadia A. Stelmashenko,
Giovanni A. Oakes,
Laurence Cochrane,
Jason W. A. Robinson,
Maud Vinet,
M. Fernando Gonzalez-Zalba,
Lisa A. Ibberson
Abstract:
We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2π) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device,…
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We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2π) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $α=0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_\text{r}=560~Ω$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems.
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Submitted 14 May, 2021; v1 submitted 1 April, 2020;
originally announced April 2020.
