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Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces
Authors:
Gyanendra Singh,
Roger Guzman,
Guilhem Saïz,
Wu Zhou,
Jaume Gazquez,
Jordi Fraxedas,
Fereshteh Masoudinia,
Dag Winkler,
Tord Claeson,
Nicolas Bergeal,
Gervasi Herranz,
Alexei Kalaboukhov
Abstract:
SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO$_3$/SrTiO$_3$ (LAO/STO…
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SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces with remarkably large mobility and mean free paths comparable to the superconducting coherence length, approaching the clean limit for superconductivity. We further show that the carrier density, mobility, and formation of the superconducting condensate are controlled by the fine-tuning of La/Al chemical ratio in the LAO film. Interestingly, we find a region in the superconducting phase diagram where the critical temperature is not suppressed below the Lifshitz transition, at odds with previous experimental investigations. These findings point out the relevance of achieving a clean-limit regime to enhance the observation of unconventional pairing mechanisms in these systems
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Submitted 25 January, 2024;
originally announced January 2024.
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Gate-tunable hallmarks of unconventional superconductivity in non-centrosymmetric nanowires
Authors:
Gyanendra Singh,
Claudio Guarcello,
Edouard Lesne,
Dag Winkler,
Tord Claeson,
Thilo Bauch,
Floriana Lombardi,
Andrea D. Caviglia,
Roberta Citro,
Mario Cuoco,
Alexei Kalaboukhov
Abstract:
Two dimensional SrTiO3-based interfaces stand out among non-centrosymmetric superconductors due to their intricate interplay of gate tunable Rashba spin-orbit coupling and multi-orbital electronic occupations, whose combination theoretically prefigures various forms of non-standard superconductivity. However, a convincing demonstration by phase sensitive measurements has been elusive so far. Here,…
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Two dimensional SrTiO3-based interfaces stand out among non-centrosymmetric superconductors due to their intricate interplay of gate tunable Rashba spin-orbit coupling and multi-orbital electronic occupations, whose combination theoretically prefigures various forms of non-standard superconductivity. However, a convincing demonstration by phase sensitive measurements has been elusive so far. Here, by employing superconducting transport measurements in nano-devices we present clear-cut experimental evidences of unconventional superconductivity in the LaAlO3/SrTiO3 interface. The central observations are the substantial anomalous enhancement of the critical current by small magnetic fields applied perpendicularly to the plane of electron motion, and the asymmetric response with respect to the magnetic field direction. These features have a unique trend in intensity and sign upon electrostatic gating that, together with their dependence on temperature and nanowire dimensions, cannot be accommodated within a scenario of canonical spin-singlet superconductivity. We theoretically demonstrate that the hall-marks of the experimental observations unambiguously indicate a coexistence of Josephson channels with sign difference and intrinsic phase shift. The character of these findings establishes the occurrence of independent components of unconventional pairing in the superconducting state due to inversion symmetry breaking. The outcomes open new venues for the investigation of multi-orbital non-centrosymmetric superconductivity and Josephson-based devices for quantum technologies.
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Submitted 1 April, 2021;
originally announced April 2021.
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Electrical transport properties of polar heterointerface between KTaO3 and SrTiO3
Authors:
A. Kalabukhov,
R. Gunnarsson,
T. Claeson,
D. Winkler
Abstract:
Electrical transport of a polar heterointerface between two insulating perovskites, KTaO3 and SrTiO3, is studied. It is formed between a thin KTaO3 film deposited on a top of TiO2- terminated (100) SrTiO3 substrate. The resulting (KO)1-(TiO2)0 heterointerface is expected to be hole-doped according to formal valences of K (1+) and Ti (4+). We observed electrical conductivity and mobility in the K…
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Electrical transport of a polar heterointerface between two insulating perovskites, KTaO3 and SrTiO3, is studied. It is formed between a thin KTaO3 film deposited on a top of TiO2- terminated (100) SrTiO3 substrate. The resulting (KO)1-(TiO2)0 heterointerface is expected to be hole-doped according to formal valences of K (1+) and Ti (4+). We observed electrical conductivity and mobility in the KTaO3/SrTiO3 similar to values measured earlier in electron-doped LaAlO3/SrTiO3 heterointerfaces. However, the sign of the charge carriers in KTaO3/SrTiO3 obtained from the Hall measurements is negative. The result is an important clue to the true origin of the doping at perovskite oxide hetero-interfaces.
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Submitted 8 April, 2007;
originally announced April 2007.
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The role of oxygen vacancies in SrTiO3 at the LaAlO3/SrTiO3 interface
Authors:
Alexey S. Kalabukhov,
Robert Gunnarsson,
Johan Borjesson,
Eva Olsson,
Tord Claeson,
Dag Winkler
Abstract:
Strontium titanate, SrTiO3, a widely used substrate material for electronic oxide thin film devices, has provided many interesting features. In a combination with a similar oxide material, LaAlO3, it has recently received great interest. It was suggested that two-dimensional electron gas is formed at the interface between SrTiO3 and LaAlO3, resulting in high electrical conductivity and mobility.…
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Strontium titanate, SrTiO3, a widely used substrate material for electronic oxide thin film devices, has provided many interesting features. In a combination with a similar oxide material, LaAlO3, it has recently received great interest. It was suggested that two-dimensional electron gas is formed at the interface between SrTiO3 and LaAlO3, resulting in high electrical conductivity and mobility. In this report we demonstrate that the transport properties in those heterostructures are very sensitive to the deposition parameters during thin film growth. Using cathode- and photoluminescence studies in conjunction with measurements of electrical transport properties and microstructure we show that the electronic properties observed at a LaAlO3/SrTiO3 interface can be explained by oxygen reduced SrTiO3. In addition, we demonstrate that oxygen can be pushed in and out of the sample, but that re-oxygenation of an initially oxygen depleted LaAlO3/SrTiO3 heterostructure is partly prevented by the presence of the film.
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Submitted 20 March, 2006;
originally announced March 2006.
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Silent Phase Qubit Based on d-Wave Josephson Junctions
Authors:
M. H. S. Amin,
A. Yu. Smirnov,
A. M. Zagoskin,
T. Lindstrom,
S. Charlebois,
T. Claeson,
A. Ya. Tzalenchuk
Abstract:
We report on design and fabrication of a new type of flux qubit that capitalizes on intrinsic properties of submicron YBCO grain boundary junctions. The operating point is protected from the fluctuations of the external fields, already on the classical level; the effects of external perturbations are absent, to the second or third order, depending on the character of the coupling. We propose an…
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We report on design and fabrication of a new type of flux qubit that capitalizes on intrinsic properties of submicron YBCO grain boundary junctions. The operating point is protected from the fluctuations of the external fields, already on the classical level; the effects of external perturbations are absent, to the second or third order, depending on the character of the coupling. We propose an experiment to observe quantum tunneling and Rabi oscillations in the qubit. Estimate of the decoherence due to fluctuations of the external flux is presented.
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Submitted 9 October, 2003;
originally announced October 2003.
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Reply to the "Comment on 'Intrinsic tunneling spectra of Bi_2(Sr_{2-x}La_x)CuO_6' "
Authors:
A. Yurgens,
D. Winkler,
T. Claeson,
S. Ono,
Yoichi Ando
Abstract:
To better address the heating issue in stacks of intrinsic Josephson junctions, we directly measure temperature of the stack by using a micron-sized thermocouple which is in direct thermal- and electrical contact to the stack, exactly in the place where the bias current is injected. Our measurements have shown that the temperature of the stack can reach 200-300K at the highest bias. Thus, we con…
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To better address the heating issue in stacks of intrinsic Josephson junctions, we directly measure temperature of the stack by using a micron-sized thermocouple which is in direct thermal- and electrical contact to the stack, exactly in the place where the bias current is injected. Our measurements have shown that the temperature of the stack can reach 200-300K at the highest bias. Thus, we confirm experimentally that the Joule self-heating is a severe problem in intrinsic-junction-spectroscopy experiments. The pseudogap features reported in our previous paper (A.Yurgens etal, PRL 90, 147005 (2003)) are indeed an artifact of Joule heating. The detailed measurements of the temperature of the stacks at different ambient temperatures T0 allow us to deduce the unique, "heating-free" I(V)-, or dI/dV(V) curves.
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Submitted 5 September, 2003;
originally announced September 2003.
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Reply to the "Comment on 'Intrinsic tunneling spectra of Bi_2(Sr_{2-x}La_x)CuO_6' ": Auxiliary information
Authors:
A. Yurgens,
D. Winkler,
T. Claeson,
S. Ono,
Yoichi Ando
Abstract:
To better address the heating issue in stacks of intrinsic Josephson junctions, we directly measure temperature of the stack by using a micron-sized thermocouple which is in direct thermal- and electrical contact to the stack, exactly in the place where the bias current is injected. Our measurements have shown that the temperature of the stack can reach 200-300K at the highest bias. Thus, we con…
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To better address the heating issue in stacks of intrinsic Josephson junctions, we directly measure temperature of the stack by using a micron-sized thermocouple which is in direct thermal- and electrical contact to the stack, exactly in the place where the bias current is injected. Our measurements have shown that the temperature of the stack can reach 200-300K at the highest bias. Thus, we confirm experimentally that the Joule self-heating is a severe problem in intrinsic-junction-spectroscopy experiments. The pseudogap features reported in our previous paper (A.Yurgens etal, PRL 90, 147005 (2003)) are indeed an artifact of Joule heating. The detailed measurements of the temperature of the stacks at different ambient temperatures T0 allow us to deduce the unique, "heating-free" I(V)-, or dI/dV(V) curves.
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Submitted 5 September, 2003;
originally announced September 2003.
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Giant lasing effect in magnetic nanoconductors
Authors:
A. Kadigrobov,
Z. Ivanov,
T. Claeson,
R. I. Shekhter,
M. Jonson
Abstract:
We propose a new principle for a compact solid-state laser in the 1-100 THz regime. This is a frequency range where attempts to fabricate small size lasers up till now have met severe technical problems. The proposed laser is based on a new mechanism for creating spin-flip processes in ferromagnetic conductors. The mechanism is due to the interaction of light with conduction electrons; the inter…
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We propose a new principle for a compact solid-state laser in the 1-100 THz regime. This is a frequency range where attempts to fabricate small size lasers up till now have met severe technical problems. The proposed laser is based on a new mechanism for creating spin-flip processes in ferromagnetic conductors. The mechanism is due to the interaction of light with conduction electrons; the interaction strength, being proportional to the large exchange energy, exceeds the Zeeman interaction by orders of magnitude. On the basis of this interaction, a giant lasing effect is predicted in a system where a population inversion has been created by tunneling injection of spin-polarized electrons from one ferromagnetic conductor to another -- the magnetization of the two ferromagnets having different orientations. Using experimental data for ferromagnetic manganese perovskites with nearly 100% spin polarization we show the laser frequency to be in the range 1-100 THz. The optical gain is estimated to be of order 10^7 cm^{-1}, which exceeds the gain of conventional semiconductor lasers by 3 or 4 orders of magnitude. A relevant experimental study is proposed and discussed.
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Submitted 20 June, 2003;
originally announced June 2003.
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Intrinsic tunneling spectra of Bi_2(Sr_{2-x}La_x)CuO_6
Authors:
A. Yurgens,
D. Winkler,
T. Claeson,
S. Ono,
Yoichi Ando
Abstract:
We have measured intrinsic-tunneling spectra of a single CuO-layer La-doped Bi_2Sr_{2-x}La_xCuO_{6+δ} (Bi2201-La_x). Despite a difference of a factor of three in the optimal superconducting critical temperatures for Bi2201-La_{0.4} and Bi2212 (32 and 95 K, respectively) and different spectral energy scales, we find that the pseudogap vanishes at a similar characteristic temperature T*\approx 230…
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We have measured intrinsic-tunneling spectra of a single CuO-layer La-doped Bi_2Sr_{2-x}La_xCuO_{6+δ} (Bi2201-La_x). Despite a difference of a factor of three in the optimal superconducting critical temperatures for Bi2201-La_{0.4} and Bi2212 (32 and 95 K, respectively) and different spectral energy scales, we find that the pseudogap vanishes at a similar characteristic temperature T*\approx 230-300K for both compounds. We find also that in Bi2201-La_x, PG humps are seen as sharp peaks and, in fact, even dominate the intrinsic spectra.
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Submitted 23 December, 2002;
originally announced December 2002.
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Coulomb blockade thermometry using a two-dimensional array of tunnel junctions
Authors:
Tobias Bergsten,
Tord Claeson,
Per Delsing
Abstract:
We have measured current-voltage characteristics of two-dimensional arrays of small tunnel junctions at temperatures from 1.5 K to 4.2 K. This corresponds to thermal energies larger than the charging energy. We show that 2D-arrays can be used as primary thermometers in the same way as 1D-arrays, and even have some advantages over 1D-arrays. We have carried out Monte Carlo simulations, which agre…
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We have measured current-voltage characteristics of two-dimensional arrays of small tunnel junctions at temperatures from 1.5 K to 4.2 K. This corresponds to thermal energies larger than the charging energy. We show that 2D-arrays can be used as primary thermometers in the same way as 1D-arrays, and even have some advantages over 1D-arrays. We have carried out Monte Carlo simulations, which agree with our experimental results.
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Submitted 13 December, 2000;
originally announced December 2000.
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A fast, primary Coulomb blockade thermometer
Authors:
Tobias Bergsten,
Tord Claeson,
Per Delsing
Abstract:
We have measured the third derivative of the current-voltage characteristics, d^3I/dV^3, in a two-dimensional array of small tunnel junctions using a lock-in amplifier. We show that this derivative is zero at a voltage which scales linearly with the temperature and depends only on the temperature and natural constants, thus providing a primary thermometer. We demonstrate a measurement method whi…
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We have measured the third derivative of the current-voltage characteristics, d^3I/dV^3, in a two-dimensional array of small tunnel junctions using a lock-in amplifier. We show that this derivative is zero at a voltage which scales linearly with the temperature and depends only on the temperature and natural constants, thus providing a primary thermometer. We demonstrate a measurement method which extracts the zero crossing voltage directly using a feedback circuit. This method requires only one voltage measurement, which makes it substantially faster than the original Coulomb blockade thermometry method.
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Submitted 13 December, 2000;
originally announced December 2000.
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Evidence for coexistence of the superconducting gap and the pseudo - gap in Bi-2212 from intrinsic tunneling spectroscopy
Authors:
V. M. Krasnov,
A. Yurgens,
D. Winkler,
P. Delsing,
T. Claeson
Abstract:
We present intrinsic tunneling spectroscopy measurements on small Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ mesas. The tunnel conductance curves show both sharp peaks at the superconducting gap voltage and broad humps representing the $c$-axis pseudo-gap. The superconducting gap vanishes at $T_c$, while the pseudo-gap exists both above and below $T_c$. Our observation implies that the superconducting and ps…
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We present intrinsic tunneling spectroscopy measurements on small Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ mesas. The tunnel conductance curves show both sharp peaks at the superconducting gap voltage and broad humps representing the $c$-axis pseudo-gap. The superconducting gap vanishes at $T_c$, while the pseudo-gap exists both above and below $T_c$. Our observation implies that the superconducting and pseudo-gaps represent different coexisting phenomena.
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Submitted 11 February, 2000;
originally announced February 2000.
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Pseudo-gap features of intrinsic tunneling in (HgBr_2)-Bi2212 single crystals
Authors:
A. Yurgens,
D. Winkler,
T. Claeson,
Seong-Ju Hwang,
Jin-Ho Choy
Abstract:
The c-axis tunneling properties of both pristine Bi2212 and its HgBr$_2$ intercalate have been measured in the temperature range 4.2 - 250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the $\it c$-axis direction have been observed. The dynamic conductance d$I/$d…
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The c-axis tunneling properties of both pristine Bi2212 and its HgBr$_2$ intercalate have been measured in the temperature range 4.2 - 250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the $\it c$-axis direction have been observed. The dynamic conductance d$I/$d$V(V)$ shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the {\it c}-axis resistance does not change after the intercalation suggesting that a coupling between $\rm CuO_2$-bilayers has little effect on the pseudogap.
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Submitted 10 July, 1999;
originally announced July 1999.
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Resonant transmission of normal electrons through Andreev states in ferromagnets
Authors:
A. Kadigrobov,
R. I. Shekhter,
M. Jonson,
Z. Ivanov,
T. Claeson
Abstract:
Giant oscillations of the conductance of a superconductor - ferromagnet - superconductor Andreev interferometer are predicted. The effect is due to the resonant transmission of normal electrons through Andreev levels when the voltage $V$ applied to the ferromagnet is close to $2h_0/e$ ($h_0$ is the spin-dependant part of the electron energy). The effect of bias voltage and phase difference betwe…
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Giant oscillations of the conductance of a superconductor - ferromagnet - superconductor Andreev interferometer are predicted. The effect is due to the resonant transmission of normal electrons through Andreev levels when the voltage $V$ applied to the ferromagnet is close to $2h_0/e$ ($h_0$ is the spin-dependant part of the electron energy). The effect of bias voltage and phase difference between the superconductors on the current and the differential conductance is presented. These efects allow a direct spectroscopy of Andreev levels in the ferromagnet.
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Submitted 26 January, 1999;
originally announced January 1999.
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Bias and temperature dependence of the noise in a single electron transistor
Authors:
Torsten Henning,
B. Starmark,
T. Claeson,
P. Delsing
Abstract:
A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias voltage, gain, and temperature, in the frequency range 1...300 Hz. The spot noise at 10 Hz is dominated by a gain dependent component, indicating that the main no…
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A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias voltage, gain, and temperature, in the frequency range 1...300 Hz. The spot noise at 10 Hz is dominated by a gain dependent component, indicating that the main noise contribution comes from fluctuations at the input of the transistor. Deviations from ideal input charge noise behaviour are found in the form of a bias dependence of the differential charge equivalent noise, i. e. the derivative of current noise with respect to gain. The temperature dependence of this effect could indicate that heating is activating the noise sources, and that they are located inside or in the near vicinity of the junctions.
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Submitted 8 October, 1998;
originally announced October 1998.
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Gain Dependence of the Noise in the Single Electron Transistor
Authors:
B. Starmark,
Torsten Henning,
A. N. Korotkov,
T. Claeson,
P. Delsing
Abstract:
An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this ex…
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An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this excess noise is not only due to resistance fluctuations. For one sample, we find a record low minimum charge noise of qn = 9*10^-6 e/sqrt(Hz) in the superconducting state and qn = 9*10^-6 e/sqrt(Hz) in the normal state at a frequency of 4.4 kHz.
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Submitted 29 June, 1998;
originally announced June 1998.
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Two-dimensional arrays of low capacitance tunnel junctions: general properties, phase transitions and Hall effect
Authors:
P. Delsing,
C. D. Chen,
D. B. Haviland,
Tobias Bergsten,
T. Claeson
Abstract:
We describe transport properties of two-dimensional arrays of low capacitance tunnel junctions, such as the current voltage characteristic and its dependence on external magnetic field and temperature. We discuss several experiments in which the small capacitance of the junctions plays an important role. In arrays where the junctions have a relatively large charging energy, (i.e. when they have…
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We describe transport properties of two-dimensional arrays of low capacitance tunnel junctions, such as the current voltage characteristic and its dependence on external magnetic field and temperature. We discuss several experiments in which the small capacitance of the junctions plays an important role. In arrays where the junctions have a relatively large charging energy, (i.e. when they have a low capacitance) and a high normal state resistance, the low bias resistance increases with decreasing temperature and eventually at very low temperature the array becomes insulating even though the electrodes in the array are superconducting. This transition to the insulating state can be described by thermal activation. In an intermediate region where the junction resistance is of the order of the quantum resistance and the charging energy is of the order of the Josephson coupling energy, the arrays can be tuned between a superconducting and an insulating state with a magnetic field. We describe measurements of this magnetic-field-tuned superconductor insulator transition, and we show that the resistance data can be scaled over several orders of magnitude. Four arrays follow the same universal function. At the transition the transverse (Hall) resistance is found to be very small in comparison with the longitudinal resistance. However, for magnetic field values larger than the critical value.we observe a substantial Hall resistance. The Hall resistance of these arrays oscillates with the applied magnetic field. features in the magnetic field dependence of the Hall resistance can qualitatively be correlated to features in the derivative of the longitudinal resistance, similar to what is found in the quantum Hall effect.
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Submitted 11 May, 1998;
originally announced May 1998.
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Local structure study about Co in YBa$_2$(Cu$_{1-x}$Co$_x$)$_3$O$_{7-δ}$ thin films using polarized XAFS
Authors:
E. D. Bauer,
F. Bridges,
C. H. Booth,
J. B. Boyce,
T. Claeson,
G. Brorsson,
Y. Suzuki
Abstract:
We have studied the local structure around Co in YBa$_2$(Cu$_{1-x}$Co$_x$)$_3$O$_{7-δ}$ thin films with three different concentrations: x=0.07, 0.10, 0.17, and in a PrBa$_2$(Cu$_{1-x}$Co$_x$)$_3$O$_{7-δ}$ thin film of concentration x=0.05 using the X-ray Absorption Fine Structure (XAFS) technique. Data were collected at the Co $K$-edge with polarizations both parallel and perpendicular to the fi…
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We have studied the local structure around Co in YBa$_2$(Cu$_{1-x}$Co$_x$)$_3$O$_{7-δ}$ thin films with three different concentrations: x=0.07, 0.10, 0.17, and in a PrBa$_2$(Cu$_{1-x}$Co$_x$)$_3$O$_{7-δ}$ thin film of concentration x=0.05 using the X-ray Absorption Fine Structure (XAFS) technique. Data were collected at the Co $K$-edge with polarizations both parallel and perpendicular to the film surface. We find that the oxygen neighbors are well ordered and shortened in comparison with YBCO Cu-O values to 1.80 Å and 1.87 Å in the $c$-axis and $ab$-plane, respectively. A comparison of further neighbors in the thin film and powder data show that these peaks in the film are suppressed in amplitude relative to the powder samples, which suggests there is more disorder and/or distortions of the Co environment present in the thin films.
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Submitted 14 March, 1996;
originally announced March 1996.
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Comparison of local structure measurements from c-axis polarized XAFS between a film and a single crystal of YBCO as a function of temperature
Authors:
C. H. Booth,
F. Bridges,
J. B. Boyce,
T. Claeson
Abstract:
We have performed fluorescence x-ray absorption fine-structure (XAFS) measurements from 20-200 K on a 5000 Å, c-axis film of YBa_2Cu_3O_{7-δ} (YBCO) on MgO (Tc=89 K) using photons polarized perpendicular to the film. These data are compared to YBCO data from a single crystal and from a film on LaAlO_3 with the same Tc. The main difference between the single crystal and the film data is that whil…
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We have performed fluorescence x-ray absorption fine-structure (XAFS) measurements from 20-200 K on a 5000 Å, c-axis film of YBa_2Cu_3O_{7-δ} (YBCO) on MgO (Tc=89 K) using photons polarized perpendicular to the film. These data are compared to YBCO data from a single crystal and from a film on LaAlO_3 with the same Tc. The main difference between the single crystal and the film data is that while the single crystal data is well described by a two-site axial oxygen [O(4)] distribution, we see no evidence for such a distribution in either thin film sample. We place an upper limit on the size ofan axial oxygen splitting for the film on MgO at < 0.09 Å. Therefore, the magnitude of the splitting is not directly related to Tc. Fits to the temperature dependent data from the YBCO film on MgO indicate that all bonds show a smooth change of their broadening factor σ, except the Cu-O(4) bonds, which show an increase in σin the vicinity of Tc, followed by a decrease of the same magnitude. Such a feature does not occur in diffraction measurements. Since XAFS measurements of σinclude any correlation between the atoms in a given bond, we conclude that the O(4) position becomes less correlated with the Cu positions near Tc. Correlation measurements of these and several further near-neighbors are also reported.
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Submitted 15 January, 1996;
originally announced January 1996.
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Correlated local distortions of the TlO layers in Tl$_2$Ba$_2$CuO$_{y}$: An x-ray absorption study
Authors:
G. G. Li,
F. Bridges,
J. B. Boyce,
T. Claeson,
C. Ström,
S. -G. Eriksson,
S. D. Conradson
Abstract:
We have used the XAFS (x-ray-absorption fine structure) technique to investigate the local structure about the Cu, Ba, and Tl atoms in orthorhombic Tl-2201 with a superconducting transition temperature T$_c$=60 K. Our results clearly show that the O(1), O(2), Cu, and Ba atoms are at their ideal sites as given by the diffraction measurements, while the Tl and O(3) atoms are more disordered than s…
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We have used the XAFS (x-ray-absorption fine structure) technique to investigate the local structure about the Cu, Ba, and Tl atoms in orthorhombic Tl-2201 with a superconducting transition temperature T$_c$=60 K. Our results clearly show that the O(1), O(2), Cu, and Ba atoms are at their ideal sites as given by the diffraction measurements, while the Tl and O(3) atoms are more disordered than suggested by the average crystal structure. The Tl-Tl distance at 3.5 Å{ } between the TlO layers does not change, but the Tl-Tl distance at 3.9 Å{ } within the TlO layer is not observed and the Tl-Ba and Ba-Tl peaks are very broad. The shorter Tl-O(3) distance in the TlO layer is about 2.33 Å, significantly shorter than the distance calculated with both the Tl and O(3) atoms at their ideal $4e$ sites ( $x=y=$0 or $\frac{1}{2}$). A model based on these results shows that the Tl atom is displaced along the $<110>$ directions from its ideal site by about 0.11 Å; the displacements of neighboring Tl atoms are correlated. The O(3) atom is shifted from the $4e$ site by about 0.53 Å{ } roughly along the $<100>$ directions. A comparison of the Tl L$_{III}$-edge XAFS spectra from three samples, with T$_c$=60 K, 76 K, and 89 K, shows that the O environment around the Tl atom is sensitive to T$_c$ while the Tl local displacement is insensitive to T$_c$ and the structural symmetry. These conclusions are compared with other experimental results and the implications for charge transfer and superconductivity are discussed. This paper has been submitted to Phys. Rev. B.
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Submitted 19 April, 1994;
originally announced April 1994.
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Local Disorder in the Oxygen Environment Around Praseodymium in YBCO:Pr from X-ray Absorption Fine Structure
Authors:
C. H. Booth,
F. Bridges,
J. B. Boyce,
T. Claeson,
Z. X. Zhao,
P. Cervantes
Abstract:
We present K-edge XAFS (X-Ray Absorption Fine Structure) data for various concentrations of Pr in Y$_{1- x}$Pr$_{x}$Ba$_{2}$Cu$_{3}$O$_{7}$. The character of the Pr K-edge XAFS data indicate that most of the Pr substitutes onto the Y site and is well ordered with respect to the unit cell. These data also show that the amplitude of the first Pr-O peak is greatly reduced when compared to the first…
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We present K-edge XAFS (X-Ray Absorption Fine Structure) data for various concentrations of Pr in Y$_{1- x}$Pr$_{x}$Ba$_{2}$Cu$_{3}$O$_{7}$. The character of the Pr K-edge XAFS data indicate that most of the Pr substitutes onto the Y site and is well ordered with respect to the unit cell. These data also show that the amplitude of the first Pr-O peak is greatly reduced when compared to the first Y-O peak in pure YBCO, and decreases with increasing Pr concentration. In contrast, the Y K-edge data for these alloys show little if any change in the oxygen environment, while the Cu K-edge data show a 10\% reduction in the first Cu-O peak. Fits to the Pr data suggest that some oxygen atoms about the Pr become disordered and/or distorted; most of the Pr-O nearest- neighbor distances are 2.45 Å, but about 15-40\% of them are in a possibly broadened peak at 2.27$^{+0.03}_{-0.12}$ Å. The Cu K-edge XAFS data show a slight broadening but no loss of oxygens, which is consistent with a radial distortion of the Pr-O bond. The existence and the size of these two bond lengths is consistent with a mixture of Pr$^{3+}$ and Pr$^{4+}$ bonds, and to a formal valence of +3.33$^{+0.07}_{-0.18}$ for the Pr ion. This paper should be published in Feb. 1994 in Phys. Rev. B.
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Submitted 7 January, 1994;
originally announced January 1994.
