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Coexistence of Antiferromagnetic Cubic and Ferromagnetic Tetragonal Polymorphs in Epitaxial CuMnSb
Authors:
Anna Ciechan,
Piotr Dluzewski,
Slawomir Kret,
Katarzyna Gas,
Lukas Scheffler,
Charles Gould,
Johannes Kleinlein,
Maciej Sawicki,
Laurens Molenkamp,
Piotr Boguslawski
Abstract:
High-resolution transmission electron microscopy and superconducting quantum interference device magnetometry shows that epitaxial CuMnSb films exhibit a coexistence of two magnetic phases, coherently intertwined in nanometric scales. The dominant $α$~phase is half-Heusler cubic antiferromagnet with the Néel temperature of 62~K, the equilibrium structure of bulk CuMnSb. The secondary phase is its…
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High-resolution transmission electron microscopy and superconducting quantum interference device magnetometry shows that epitaxial CuMnSb films exhibit a coexistence of two magnetic phases, coherently intertwined in nanometric scales. The dominant $α$~phase is half-Heusler cubic antiferromagnet with the Néel temperature of 62~K, the equilibrium structure of bulk CuMnSb. The secondary phase is its ferromagnetic tetragonal $β$ polymorph with the Curie temperature of about 100~K. First principles calculations provide a consistent interpretation of experiment, since (i) total energy of $β$--CuMnSb is higher than that of $α$--CuMnSb only by 0.12~eV per formula unit, which allows for epitaxial stabilization of this phase, (ii) the metallic character of $β$--CuMnSb favors the Ruderman-Kittel-Kasuya-Yoshida ferromagnetic coupling, and (iii) the calculated effective Curie-Weiss magnetic moment of Mn ions in both phases is about $5.5~μ_\mathrm{B}$, favorably close to the measured value. Calculated properties of all point native defects indicate that the most likely to occur are $\mathrm{Mn}_\mathrm{Cu}$ antisites. They affect magnetic properties of epilayers, but they cannot induce the ferromagnetic order in CuMnSb. Combined, the findings highlight a practical route towards fabrication of functional materials in which coexisting polymorphs provide complementing functionalities in one host.
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Submitted 29 May, 2024;
originally announced May 2024.
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Theory of the $sp-d$ coupling of transition metal impurities with free carriers in ZnO
Authors:
Anna Ciechan,
Piotr Bogusławski
Abstract:
The $s,p-d$ exchange coupling between the spins of band carriers and of transition metal (TM) dopants ranging from Ti to Cu in ZnO is studied within the density functional theory. The $+U$ corrections are included to reproduce the experimental ZnO band gap and the dopant levels. The $p-d$ coupling reveals unexpectedly complex features. In particular, (i) the $p-d$ coupling constants $N_0β$ vary ab…
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The $s,p-d$ exchange coupling between the spins of band carriers and of transition metal (TM) dopants ranging from Ti to Cu in ZnO is studied within the density functional theory. The $+U$ corrections are included to reproduce the experimental ZnO band gap and the dopant levels. The $p-d$ coupling reveals unexpectedly complex features. In particular, (i) the $p-d$ coupling constants $N_0β$ vary about 10 times when going from V to Cu, (ii) not only the value but also the sign of $N_0β$ depends on the charge state of the dopant, (iii) the $p-d$ coupling with the heavy holes and the light holes is not the same; in the case of Fe, Co and Ni, $N_0β$s for the two subbands can differ twice, and for Cu the opposite sign of the coupling is found for light and heavy holes. The main features of the $p-d$ coupling are determined by the $p-d$ hybridization between the $d$(TM) and $p$(O) orbitals. In contrast, the $s-d$ coupling constant $N_0α$ is almost the same for all TM ions, and does not depend on the charge state of the dopant. The TM-induced spin polarization of the $p$(O) orbitals contributes to the $s-d$ coupling, enhancing $N_0α$.
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Submitted 24 February, 2021;
originally announced February 2021.
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Electronic properties of Bi$_{2}$Se$_{3}$ dopped by $3d$ transition metal (Mn, Fe, Co, or Ni) ions
Authors:
Andrzej Ptok,
Konrad Jerzy Kapcia,
Anna Ciechan
Abstract:
Topological insulators are characterized by the existence of band inversion and the possibility of the realization of surface states. Doping with a magnetic atom, which is a source of the time-reversal symmetry breaking, can lead to realization of novel magneto-electronic properties of the system. In this paper, we study effects of substitution by the transition metal ions (Mn, Fe, Co and Ni) into…
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Topological insulators are characterized by the existence of band inversion and the possibility of the realization of surface states. Doping with a magnetic atom, which is a source of the time-reversal symmetry breaking, can lead to realization of novel magneto-electronic properties of the system. In this paper, we study effects of substitution by the transition metal ions (Mn, Fe, Co and Ni) into Bi$_{2}$Se$_{3}$ on its electric properties. Using the ab inito supercell technique, we investigate the density of states and the projected band structure. Under such substitution the shift of the Fermi level is observed. We find the existence of nearly dispersionless bands around the Fermi level associated with substituted atoms, especially, in the case of the Co and Ni. Additionally, we discuss the modification of the electron localization function as well as charge and spin redistribution in the system. Our study shows a strong influence of the transition metal--Se bond on local modifications of the physical properties. The results are also discussed in the context of the interplay between energy levels of the magnetic impurities and topological surface states.
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Submitted 21 September, 2020;
originally announced September 2020.
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Transition metal ions in ZnO: effects of intrashell Coulomb repulsion on electronic properties
Authors:
A. Ciechan,
P. Bogusławski
Abstract:
Electronic structure of the transition metal (TM) dopants in ZnO is calculated by first principles approach. Analysis of the results is focused on the properties determined by the intrashell Coulomb coupling. The role of both direct and exchange interaction channel is analyzed. The coupling is manifested in the strong charge state dependence of the TM gap levels, which leads to the metastability o…
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Electronic structure of the transition metal (TM) dopants in ZnO is calculated by first principles approach. Analysis of the results is focused on the properties determined by the intrashell Coulomb coupling. The role of both direct and exchange interaction channel is analyzed. The coupling is manifested in the strong charge state dependence of the TM gap levels, which leads to the metastability of photoexcited Mn, and determines the accessible equilibrium charge states of TM ions. The varying magnitude of the exchange coupling is reflected in the dependence of the spin splitting energy on the chemical identity across the 3$d$ series, as well as the charge state dependence of spin-up spin-down exchange splitting.
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Submitted 25 February, 2019;
originally announced February 2019.
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Calculated optical properties of Co in ZnO: internal and ionization transitions
Authors:
A. Ciechan,
P. Bogusławski
Abstract:
Previous luminescence and absorption experiments in Co-doped ZnO revealed two ionization and one intrashell transition of $d(\textrm{Co}^{2+})$ electrons. Those optical properties are analyzed within the generalized gradient approximation to the density functional theory. The two ionization channels involve electron excitations from the two $\textrm{Co}^{2+}$ gap states, the $t_{2\uparrow}$ triple…
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Previous luminescence and absorption experiments in Co-doped ZnO revealed two ionization and one intrashell transition of $d(\textrm{Co}^{2+})$ electrons. Those optical properties are analyzed within the generalized gradient approximation to the density functional theory. The two ionization channels involve electron excitations from the two $\textrm{Co}^{2+}$ gap states, the $t_{2\uparrow}$ triplet and the $e_{2\downarrow}$ doublet, to the conduction band. The third possible ionization channel, in which an electron is excited from the valence band to the $\textrm{Co}^{2+}$ level, requires energy in excess of 4~eV, and cannot lead to absorption below the ZnO band gap, contrary to earlier suggestions. We also consider two recombination channels, the direct recombination and a two-step process, in which a photoelectron is captured by $\textrm{Co}^{3+}$ and then recombines via the internal transition. Finally, the observed increase the band gap with the Co concentration is well reproduced by theory.
The accurate description of ZnO:Co is achieved after including $+U$ corrections to the relevant orbitals of Zn, O, and Co. The $+U(\textrm{Co})$ value was calculated by the linear response approach, and independently was obtained by fitting the calculated transition energies to the optical data. The respective values, 3.4 and 3.0~eV, agree well. Ionization of Co induces large energy shifts of the gap levels, driven by the varying Coulomb coupling between the $d(\textrm{Co})$ electrons, and by large lattice relaxations around Co ions. In turn, over $\sim 1$~eV changes of $\textrm{Co}^{2+}$ levels induced by the internal transition are mainly caused by the occupation-dependent $U(\textrm{Co})$ corrections.
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Submitted 25 February, 2019; v1 submitted 12 June, 2018;
originally announced June 2018.
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Metastability of Mn$^{3+}$ in ZnO driven by strong $d$(Mn) intrashell Coulomb repulsion: experiment and theory
Authors:
A. Ciechan,
H. Przybylińska,
P. Bogusławski,
A. Suchocki,
A. Grochot,
A. Mycielski,
P. Skupiński,
K. Grasza
Abstract:
Depopulation of the Mn$^{2+}$ state in ZnO:Mn upon illumination, monitored by quenching of the Mn$^{2+}$ EPR signal intensity, was observed at temperatures below 80~K. Mn$^{2+}$ photoquenching is shown to result from the Mn$^{2+}$ $\to$ Mn$^{3+}$ ionization transition, promoting one electron to the conduction band. Temperature dependence of this process indicates the existence of an energy barrier…
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Depopulation of the Mn$^{2+}$ state in ZnO:Mn upon illumination, monitored by quenching of the Mn$^{2+}$ EPR signal intensity, was observed at temperatures below 80~K. Mn$^{2+}$ photoquenching is shown to result from the Mn$^{2+}$ $\to$ Mn$^{3+}$ ionization transition, promoting one electron to the conduction band. Temperature dependence of this process indicates the existence of an energy barrier for electron recapture of the order of 1~meV. GGA$+U$ calculations show that after ionization of Mn$^{2+}$ a moderate breathing lattice relaxation in the 3+ charge state occurs, which increases energies of $d$(Mn) levels. At its equilibrium atomic configuration, Mn$^{3+}$ is metastable since the direct capture of photo-electron is not possible. The metastability is mainly driven by the strong intra-shell Coulomb repulsion between $d$(Mn) electrons. Both the estimated barrier for electron capture and the photoionization energy are in good agreement with the experimental values.
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Submitted 9 June, 2016;
originally announced June 2016.
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Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction
Authors:
J. Papierska,
A. Ciechan,
P. Bogusławski,
M. Boshta,
M. M. Gomaa,
E. Chikoidze,
Y. Dumont,
A. Drabińska,
H. Przybylińska,
A. Gardias,
J. Szczytko,
A. Twardowski,
M. Tokarczyk,
G. Kowalski,
B. Witkowski,
K. Sawicki,
W. Pacuski,
M. Nawrocki,
J. Suffczyński
Abstract:
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient…
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Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient approximation (GGA+U) indicate that the Fe ion is a relatively shallow donor. Its stable charge state is Fe2+ in ideal ZnO, however, the high energy of the (+/0) transition level enhances the compensation of Fe2+ to Fe3+ by non-intentional acceptors in real samples. Using several experimental methods like electron paramagnetic resonance, magnetometry, conductivity, excitonic magnetic circular dichroism and magneto-photoluminescence we confirm the 3+ valency of the iron ions in polycrystalline (Zn,Fe)O films with the Fe content attaining 0.2%.We find a predicted increase of n-type conductivity upon the Fe doping with the Fe donor ionization energy of 0.25 +/- 0.02 eV consistent with the results of theoretical considerations. Moreover, our magnetooptical measurements confirm the calculated non-vanishing s,p-d exchange interaction between band carriers and localized magnetic moments of the Fe3+ ions in the ZnO, being so far an unsettled issue.
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Submitted 2 December, 2016; v1 submitted 3 March, 2016;
originally announced March 2016.
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Magnetism and Superconductivity of S-substituted FeTe
Authors:
A. Ciechan,
M. J. Winiarski,
M. Samsel-Czekała
Abstract:
The influence of a partial substitution with sulphur into Te sites on the crystal, electronic and magnetic structures of FeTe is investigated by DFT calculations. The results reveal a phase transition from the antiferromagnetic double-stripe order for pure FeTe to the single-stripe order for S-substituted samples, which coincides with the previously observed appearance of the superconducting state…
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The influence of a partial substitution with sulphur into Te sites on the crystal, electronic and magnetic structures of FeTe is investigated by DFT calculations. The results reveal a phase transition from the antiferromagnetic double-stripe order for pure FeTe to the single-stripe order for S-substituted samples, which coincides with the previously observed appearance of the superconducting state. The magnetic transition is caused by the variations of the average chalcogen position in the unit cell. The analyzed normal-state properties of Fe(Te,S) and Fe(Se;S) compounds allow a detection of the well resolved nesting-driven magnetic fluctuations only for superconducting samples, consistent with their antiferromagnetic ground state. Thus, the role of an S-substitution is a suppression of the double-stripe antiferromagnetic order to give rise to the single-stripe correlations, which are associated with an occurrence of superconductivity in Fe(Te,S) solid solutions.
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Submitted 23 January, 2015;
originally announced January 2015.
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Electronic structure of ruthenium-doped iron chalcogenides
Authors:
M. J. Winiarski,
M. Samsel-Czekała,
A. Ciechan
Abstract:
The structural and electronic properties of hypothetical Ru$_x$Fe$_{1-x}$Se and Ru$_x$Fe$_{1-x}$Te systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known…
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The structural and electronic properties of hypothetical Ru$_x$Fe$_{1-x}$Se and Ru$_x$Fe$_{1-x}$Te systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known discrepancies between experimental data and DFT-calculated results for structural parameters of iron chalcogenides are related to the semicore atomic states which were frozen in the used here approach. Such an approach yields valid results of the electronic structures of the investigated compounds. The Ru-based chalcogenides exhibit the same topology of the Fermi surface (FS) as that of FeSe, differing only in subtle FS nesting features. Our calculations predict that the ground states of RuSe and RuTe are nonmagnetic, whereas those of the solid solutions Ru$_x$Fe$_{1-x}$Se and Ru$_x$Fe$_{1-x}$Te become the single- and double-stripe antiferromagnetic, respectively. However, the calculated stabilization energy values are comparable for each system. The phase transitions between these magnetic arrangements may be induced by slight changes of the chalcogen atom positions and the lattice parameters $a$ in the unit cell of iron selenides and tellurides. Since the superconductivity in iron chalcogenides is believed to be mediated by the spin fluctuations in single-stripe magnetic phase, the Ru$_x$Fe$_{1-x}$Se and Ru$_x$Fe$_{1-x}$Te systems are good candidates for new superconducting iron-based materials.
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Submitted 12 December, 2014;
originally announced December 2014.
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Strain effects on electronic structure and superconductivity in the iron telluride
Authors:
M. J. Winiarski,
M. Samsel-Czekała,
A. Ciechan
Abstract:
The influence of tensile strain in the ab-plane on crystal and electronic structure of FeTe has been studied ab initio. In superconducting FeSe the Fermi surface nesting with a vector q~(0.5,0.5)(2π/a) is believed to be crucial for rising superconductivity mediated by spin-fluctuations. The results presented here indicate that tensile-strained FeTe also exhibits such conditions. Furthermore, the F…
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The influence of tensile strain in the ab-plane on crystal and electronic structure of FeTe has been studied ab initio. In superconducting FeSe the Fermi surface nesting with a vector q~(0.5,0.5)(2π/a) is believed to be crucial for rising superconductivity mediated by spin-fluctuations. The results presented here indicate that tensile-strained FeTe also exhibits such conditions. Furthermore, the Fermi surface changes, related to the increase of the lattice parameter a of this telluride, are opposite to analogous effects reported for FeSe. Since a recently reported transition from the double-stripe to the single-stripe magnetic order in FeTe under tensile strain in the ab-plane is associated with an occurence of superconductivity in corresponding thin films, these findings allow for drawing a consistent picture of superconductivity in FeSe(1-x)Te(x) systems, in general.
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Submitted 14 April, 2014; v1 submitted 31 March, 2014;
originally announced March 2014.
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Magnetic phase transitions and superconductivity in strained FeTe
Authors:
A. Ciechan,
M. J. Winiarski,
M. Samsel-Czekała
Abstract:
The influence of hydrostatic pressure and ab-plane strain on the magnetic structure of FeTe is investigated from first principles. The results of calculations reveal a phase transition from antiferromagnetic double-stripe ordering at ambient pressure to ferromagnetic ordering at 2 GPa, or under compressive strain reducing the lattice parameter a by about 3%. In turn, a tensile strain of less than…
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The influence of hydrostatic pressure and ab-plane strain on the magnetic structure of FeTe is investigated from first principles. The results of calculations reveal a phase transition from antiferromagnetic double-stripe ordering at ambient pressure to ferromagnetic ordering at 2 GPa, or under compressive strain reducing the lattice parameter a by about 3%. In turn, a tensile strain of less than 2% induces the phase transition to antiferromagnetic single-stripe ordering. It corresponds to the superconducting FeTe thin films, thereby confirming that the superconducting state is positively linked to single-stripe antiferromagnetic fluctuations. Both types of transition indicate that the position of Te atoms in the crystal is crucial for the magnetic and superconducting properties of iron chalcogenides.
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Submitted 22 November, 2013;
originally announced November 2013.
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Strain effects on the electronic structure of the FeSe0.5Te0.5 superconductor
Authors:
M. J. Winiarski,
M. Samsel-Czekała,
A. Ciechan
Abstract:
The electronic structure of the strained FeSe0.5Te0.5 superconductor has been investigated from first principles. Our calculation results indicate that the influence of hydrostatic, biaxial or uniaxial compressive stress on the density of states at the Fermi level is insignificant. The overall shape of the Fermi-surface (FS) nesting function for FeSe0.5Te0.5 at ambient pressure resembles that of i…
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The electronic structure of the strained FeSe0.5Te0.5 superconductor has been investigated from first principles. Our calculation results indicate that the influence of hydrostatic, biaxial or uniaxial compressive stress on the density of states at the Fermi level is insignificant. The overall shape of the Fermi-surface (FS) nesting function for FeSe0.5Te0.5 at ambient pressure resembles that of its parent compound, FeSe, but under the ab-plane compressive strain. In these two systems, changes of their FSs under various stress conditions are qualitatively almost the same. However, in FeSe0.5Te0.5 the intensity of the perfect Q=(0.5,0.5)*(2π/a) nesting vector is more diminished. These findings are in good agreement with former experimental data and support the idea of spin-fluctuation mediated superconductivity in iron chalcogenides.
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Submitted 13 August, 2013;
originally announced August 2013.
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Strain effects on electronic structure of the iron selenide superconductor
Authors:
M. J. Winiarski,
M. Samsel-Czekała,
A. Ciechan
Abstract:
The influence of various strains on crystal and electronic structures of superconducting FeSe has been studied ab initio. We consider changes in the Fermi surface nesting with a vector Q=(0.5,0.5)*(2π/a) as crucial for rising superconductivity (SC) mediated by spin-fluctuations (SF). Our results indicate that the c-axis strained FeSe exhibits the most imperfect nesting, which enhances SF and, henc…
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The influence of various strains on crystal and electronic structures of superconducting FeSe has been studied ab initio. We consider changes in the Fermi surface nesting with a vector Q=(0.5,0.5)*(2π/a) as crucial for rising superconductivity (SC) mediated by spin-fluctuations (SF). Our results indicate that the c-axis strained FeSe exhibits the most imperfect nesting, which enhances SF and, hence, also SC. In turn, the ab-plane compressive strain slightly weakens this} nesting while the tensile strain destroys it completely. These findings are consistent with reported earlier experimental dependencies of superconducting transition temperatures on strain in FeSe thin films.
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Submitted 13 August, 2013;
originally announced August 2013.
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The substitution effects on electronic structure of iron selenide superconductors
Authors:
A. Ciechan,
M. J. Winiarski,
M. Samsel-Czekała
Abstract:
The influence of a partial substitution with S, Te, Co, Ni and Cu atoms on the electronic structure of the FeSe superconductor has been investigated within the density functional theory. The results of the supercell calculations reveal distinct changes of electronic structures of the substituted FeSe systems, which can be responsible for their superconducting properties. The replacement of Se atom…
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The influence of a partial substitution with S, Te, Co, Ni and Cu atoms on the electronic structure of the FeSe superconductor has been investigated within the density functional theory. The results of the supercell calculations reveal distinct changes of electronic structures of the substituted FeSe systems, which can be responsible for their superconducting properties. The replacement of Se atoms by Te or S ones yields imperfect nesting between the holelike and electronlike Fermi surface (FS) sheets, which enhances magnetic fluctuations responsible for superconducting pairing, thus leading to higher values of the superconducting critical temperatures. Meanwhile, the substitutions with transition-metal atoms for iron sites make more substantial changes of the FSs topology, since the holelike cylinders shrink at the cost of an enlargement of the electronlike ones. Thus, the superconducting pairing, driven by the nesting between these sheets, weakens and superconductivity disappears for a small percentage of dopants. The results support the idea of spin-fluctuation mediated superconductivity in iron chalcogenides.
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Submitted 12 August, 2013;
originally announced August 2013.
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The Pressure Effects on Electronic Structure of Iron Chalcogenide Superconductors FeSe$_{1-x}$Te$_x$
Authors:
A. Ciechan,
M. J. Winiarski,
M. Samsel-Czekała
Abstract:
We study the electronic structure of iron-based superconductors FeSe$_{1-x}$Te$_x$ within the density functional theory. We pay particular attention to the pressure effects on the Fermi surface (FS) topology, which seem to be correlated with a critical superconducting temperature TC of iron chalcogenides and pnictides. A reduction of the FS nesting between hole and electron cylinders with increasi…
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We study the electronic structure of iron-based superconductors FeSe$_{1-x}$Te$_x$ within the density functional theory. We pay particular attention to the pressure effects on the Fermi surface (FS) topology, which seem to be correlated with a critical superconducting temperature TC of iron chalcogenides and pnictides. A reduction of the FS nesting between hole and electron cylinders with increasing pressure is observed, which can lead to higher values of TC . The tellurium substitution into selenium sites yields FS changes similar to the pressure effect.
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Submitted 10 January, 2012; v1 submitted 15 November, 2011;
originally announced November 2011.
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Interorbital pair scattering in clean and impure superconductors
Authors:
Anna Ciechan,
Karol I. Wysokinski
Abstract:
The calculations of the local and global properties of two band superconductors have been presented with particular attention to the role of the inter-orbital scattering of pairs. The properties of such superconductors are very different from a single band or typical two band systems with dominant intra-band pairing interactions. The role of Van Hove singularity in one of the bands on the proper…
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The calculations of the local and global properties of two band superconductors have been presented with particular attention to the role of the inter-orbital scattering of pairs. The properties of such superconductors are very different from a single band or typical two band systems with dominant intra-band pairing interactions. The role of Van Hove singularity in one of the bands on the properties of intra-band clean superconductor has been discussed. It leads to marked increase of superconducting transition temperature in the weak coupling limit. We study the inhomogeneous systems in which the characteristics change from place to place by solving the Bogolubov-de Gennes equations for small clusters. The suppression of the superconducting order parameter by the single impurity scattering the fermions between bands is contrasted with that due to intra-band impurity scattering. The results obtained for impure systems have been shown as a maps of local density of states, the order parameter and gap function. They can be directly compared with STM spectra of the real material.
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Submitted 4 September, 2009;
originally announced September 2009.
