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Dimensionality Engineering of Magnetic Anisotropy from Anomalous Hall Effect in Synthetic SrRuO3 Crystals
Authors:
Seung Gyo Jeong,
Seong Won Cho,
Sehwan Song,
Jin Young Oh,
Do Gyeom Jeong,
Gyeongtak Han,
Hu Young Jeong,
Ahmed Yousef Mohamed,
Woo-suk Noh,
Sungkyun Park,
Jong Seok Lee,
Suyoun Lee,
Young-Min Kim,
Deok-Yong Cho,
Woo Seok Choi
Abstract:
Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality of epitaxially-grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designi…
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Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality of epitaxially-grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a correlated ferromagnetic SrRuO3 and nonmagnetic SrTiO3 layers, we observed modulated ferromagnetic behavior with the change of the SrRuO3 thickness. Especially, for three-unit-cell-thick layers, we observe a significant 1,500% improvement of coercive field in the anomalous Hall effect, which cannot be solely attributed to the dimensional crossover in ferromagnetism. The atomic-scale heterostructures further reveal the systematic modulation of anisotropy for the lattice structure and orbital hybridization, explaining the enhanced magnetic anisotropy. Our findings provide valuable insights into engineering the anisotropic hybridization of synthetic magnetic crystals, offering a tunable spin order for various applications.
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Submitted 3 July, 2024;
originally announced July 2024.
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Altermagnetic Polar Metallic phase in Ultra-Thin Epitaxially-Strained RuO2 Films
Authors:
Seung Gyo Jeong,
In Hyeok Choi,
Sreejith Nair,
Luca Buiarelli,
Bita Pourbahari,
Jin Young Oh,
Nabil Bassim,
Ambrose Seo,
Woo Seok Choi,
Rafael M. Fernandes,
Turan Birol,
Liuyan Zhao,
Jong Seok Lee,
Bharat Jalan
Abstract:
Altermagnetism refers to a wide class of compensated magnetic orders featuring magnetic sublattices with opposite spins related by rotational symmetry rather than inversion or translational operations, resulting in non-trivial spin splitting and high-order multipolar orders. Here, by combining theoretical analysis, electrical transport, X-ray and optical spectroscopies, and nonlinear optical measu…
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Altermagnetism refers to a wide class of compensated magnetic orders featuring magnetic sublattices with opposite spins related by rotational symmetry rather than inversion or translational operations, resulting in non-trivial spin splitting and high-order multipolar orders. Here, by combining theoretical analysis, electrical transport, X-ray and optical spectroscopies, and nonlinear optical measurements, we establish a phase diagram in hybrid molecular beam epitaxy-grown RuO2/TiO2 (110) films, mapping the broken symmetries along the altermagnetic/electronic/structural phase transitions as functions of film thickness and temperature. This phase diagram features a novel altermagnetic metallic polar phase in strained 2 nm samples, extending the concept of multiferroics to altermagnetic systems. These results provide a comprehensive understanding of altermagnetism upon epitaxial heterostructure design for emergent novel phases with multifunctionalities.
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Submitted 9 May, 2024;
originally announced May 2024.
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Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure
Authors:
Dongwon Shin,
Hyeonbeom Kim,
Sung Ju Hong,
Sehwan Song,
Yeongju Choi,
Youngkuk Kim,
Sungkyun Park,
Dongseok Suh,
Woo Seok Choi
Abstract:
Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate tunable spin filters. We demonstrate that a hybrid het…
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Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate tunable spin filters. We demonstrate that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin exchange splitting. The large and adjustable spin exchange splitting of 155.9 - 306.5 meV was obtained by the characteristic shifts in both the spin symmetry broken quantum Hall states and the Shubnikov-de-Haas oscillations. Strong hybridization induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically-tunable spin polarization in hybrid heterostructures.
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Submitted 13 March, 2024;
originally announced March 2024.
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Tunable electron scattering mechanism in plasmonic SrMoO$_3$ thin films
Authors:
Rahma Dhani Prasetiyawati,
Seung Gyo Jeong,
Chan-Koo Park,
Sehwan Song,
Sungkyun Park,
Tuson Park,
Woo Seok Choi
Abstract:
4d transition metal perovskite oxides serve as suitable testbeds for the study of strongly correlated metallic properties. Among these, $SrMoO_{3}$ (SMO) exhibits remarkable electrical conductivity at room temperature. The temperature-dependent resistivity $(ρ(T))$ exhibits a Fermi-liquid behavior below the transition temperature $T^{*}$, reflecting the dominant electron-electron interaction. Abov…
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4d transition metal perovskite oxides serve as suitable testbeds for the study of strongly correlated metallic properties. Among these, $SrMoO_{3}$ (SMO) exhibits remarkable electrical conductivity at room temperature. The temperature-dependent resistivity $(ρ(T))$ exhibits a Fermi-liquid behavior below the transition temperature $T^{*}$, reflecting the dominant electron-electron interaction. Above $T^{*}$, electron-phonon interaction becomes more appreciable. In this study, we employed the power-law scaling of $ρ(T)$ to rigorously determine the $T^{*}$. We further demonstrate that the $T^{*}$ can be modified substantially by ~40 K in epitaxial thin films. It turns out that the structural quality determines $T^{*}$. Whereas the plasma frequency could be tuned by the change in the electron-electron interaction via the effective mass enhancement, we show that the plasmonic properties are more directly governed by the electron-impurity scattering. The facile control of the electron scattering mechanism through structural quality modulation can be useful for plasmonic sensing applications in the visible region.
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Submitted 24 January, 2024;
originally announced January 2024.
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Correlated Quantum Phenomena of Spin-Orbit Coupled Perovskite Oxide Heterostructures: Cases of SrRuO3 and SrIrO3-Based Artificial Superlattices
Authors:
Seung Gyo Jeong,
Jin Young Oh,
Lin Hao,
Jian Liu,
Woo Seok Choi
Abstract:
Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d oxide superlattices, in which the spin-orbit coupling plays a significant role compared with conventional 3d oxide…
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Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d oxide superlattices, in which the spin-orbit coupling plays a significant role compared with conventional 3d oxide superlattices. Modulations in crystal structures with octahedral distortion, phonon engineering, electronic structures, spin orderings, and dimensionality control are discussed for 4d oxide superlattices. Atomic and magnetic structures, Jeff = 1/2 pseudospin and charge fluctuations, and the integration of topology and correlation are discussed for 5d oxide superlattices. This review provides insights into how correlated quantum phenomena arise from the deliberate design of superlattice structures that give birth to novel functionalities.
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Submitted 27 December, 2023;
originally announced December 2023.
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Exotic magnetic anisotropy near digitized dimensional Mott boundary
Authors:
Seung Gyo Jeong,
Jihyun Kim,
Taewon Min,
Sehwan Song,
Jin Young Oh,
Woo-suk Noh,
Sungkyun Park,
Tuson Park,
Jong Mok Ok,
Jaekwang Lee,
Woo Seok Choi
Abstract:
The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure, highly limiting its engineering. We demonstrate the magnetic anisotropy modulation near a digitized dimensional Mott boundary in artificial superlattices composed…
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The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure, highly limiting its engineering. We demonstrate the magnetic anisotropy modulation near a digitized dimensional Mott boundary in artificial superlattices composed of a correlated magnetic monolayer SrRuO3 and nonmagnetic SrTiO3. The magnetic anisotropy is initially engineered by modulating the interlayer coupling strength between the magnetic monolayers. Interestingly, when the interlayer coupling strength is maximized, a nearly degenerate state is realized, in which the anisotropic magnetotransport is strongly influenced by both the thermal and magnetic energy scales. Our results offer a new digitized control for magnetic anisotropy in low-dimensional Mott systems, inspiring promising integration of Mottronics and spintronics.
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Submitted 15 November, 2023;
originally announced November 2023.
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Application of Machine Learning to Sporadic Experimental Data for Understanding Epitaxial Strain Relaxation
Authors:
Jin Young Oh,
Dongwon Shin,
Woo Seok Choi
Abstract:
Understanding epitaxial strain relaxation is one of the key challenges in functional thin films with strong structure-property relation. Herein, we employ an emerging data analytics approach to quantitatively evaluate the underlying relationships between critical thickness (hc) of strain relaxation and various physical and chemical features, despite the sporadic experimental data points available.…
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Understanding epitaxial strain relaxation is one of the key challenges in functional thin films with strong structure-property relation. Herein, we employ an emerging data analytics approach to quantitatively evaluate the underlying relationships between critical thickness (hc) of strain relaxation and various physical and chemical features, despite the sporadic experimental data points available. First, we have collected and refined reported hc of perovskite oxide thin film/substrate system to construct a consistent sub-dataset which captures a common trend among the varying experimental details. Then, we employ correlation analyses and feature engineering to find the most relevant feature set which include Poisson's ratio and lattice mismatch. With the insight offered by correlation analyses and feature engineering, machine learning (ML) models have been trained to deduce a decent accuracy, which has been further validated experimentally. the demonstrated framework is expected to be efficiently extended to the other classes of thin films in understanding hc.
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Submitted 5 January, 2023;
originally announced January 2023.
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Atomic and Electronic Structures of Correlated SrRuO3/SrTiO3 Superlattices
Authors:
Seung Gyo Jeong,
Ahmed Yousef Mohamed,
Deok-Yong Cho,
Woo Seok Choi
Abstract:
Atomic-scale precision epitaxy of perovskite oxide superlattices provides unique opportunities for controlling the correlated electronic structures, activating effective control knobs for intriguing functionalities including electromagnetic, thermoelectric, and electrocatalytic behaviors. In this study, we investigated the close interplay between the atomic and electronic structures of correlated…
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Atomic-scale precision epitaxy of perovskite oxide superlattices provides unique opportunities for controlling the correlated electronic structures, activating effective control knobs for intriguing functionalities including electromagnetic, thermoelectric, and electrocatalytic behaviors. In this study, we investigated the close interplay between the atomic and electronic structures of correlated superlattices synthesized by atomic-scale precision epitaxy. In particular, we employ superlattices composed of correlated magnetic SrRuO3 (SRO) and quantum paraelectric SrTiO3 (STO) layers. In those superlattices, RuO6 octahedral distortion is systematically controlled from 167 to 175 degrees depending on the thickness of the STO layers, also affecting the TiO6 octahedral distortion within the STO layer. Customized octahedral distortion within SRO/STO superlattices in turn modifies the electronic structures of both the Ti and Ru compounds, observed by X-ray absorption spectroscopy. Our results identify the close correlation between atomic lattice and electronic structures enabled by the facile controllability of atomic-scale epitaxy, which would be useful for designing future correlated oxide devices.
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Submitted 3 January, 2023;
originally announced January 2023.
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Atomic-scale Modulation of Synthetic Magnetic Order in Oxide Superlattices
Authors:
Seung Gyo Jeong,
Sehwan Song,
Sungkyun Park,
Valeria Lauter,
Woo Seok Choi
Abstract:
Atomic-scale precision control of magnetic interactions facilitates a synthetic spin order useful for spintronics, including advanced memory and quantum logic devices. Conventional modulation of synthetic spin order has been limited to metallic heterostructures that exploit RKKY interaction through a nonmagnetic metallic spacer; however, they face problems arising from Joule heating and/or electri…
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Atomic-scale precision control of magnetic interactions facilitates a synthetic spin order useful for spintronics, including advanced memory and quantum logic devices. Conventional modulation of synthetic spin order has been limited to metallic heterostructures that exploit RKKY interaction through a nonmagnetic metallic spacer; however, they face problems arising from Joule heating and/or electric breakdown. The practical realization and observation of a synthetic spin order across a nonmagnetic insulating spacer would lead to the development of spin-related devices with a completely different concept. Herein, we report the atomic-scale modulation of the synthetic spiral spin order in oxide superlattices composed of ferromagnetic metal and nonmagnetic insulator layers. The atomically controlled superlattice exhibit an oscillatory magnetic behavior, representing the existence of a spiral spin structure. Depth-sensitive polarized neutron reflectometry evidences modulated spiral spin structures as a function of the nonmagnetic insulator layer thickness. Atomic-scale customization of the spin state could lead the field one step further to actual spintronic applications.
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Submitted 3 January, 2023;
originally announced January 2023.
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SGRAM: Improving Scene Graph Parsing via Abstract Meaning Representation
Authors:
Woo Suk Choi,
Yu-Jung Heo,
Byoung-Tak Zhang
Abstract:
Scene graph is structured semantic representation that can be modeled as a form of graph from images and texts. Image-based scene graph generation research has been actively conducted until recently, whereas text-based scene graph generation research has not. In this paper, we focus on the problem of scene graph parsing from textual description of a visual scene. The core idea is to use abstract m…
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Scene graph is structured semantic representation that can be modeled as a form of graph from images and texts. Image-based scene graph generation research has been actively conducted until recently, whereas text-based scene graph generation research has not. In this paper, we focus on the problem of scene graph parsing from textual description of a visual scene. The core idea is to use abstract meaning representation (AMR) instead of the dependency parsing mainly used in previous studies. AMR is a graph-based semantic formalism of natural language which abstracts concepts of words in a sentence contrary to the dependency parsing which considers dependency relationships on all words in a sentence. To this end, we design a simple yet effective two-stage scene graph parsing framework utilizing abstract meaning representation, SGRAM (Scene GRaph parsing via Abstract Meaning representation): 1) transforming a textual description of an image into an AMR graph (Text-to-AMR) and 2) encoding the AMR graph into a Transformer-based language model to generate a scene graph (AMR-to-SG). Experimental results show the scene graphs generated by our framework outperforms the dependency parsing-based model by 11.61\% and the previous state-of-the-art model using a pre-trained Transformer language model by 3.78\%. Furthermore, we apply SGRAM to image retrieval task which is one of downstream tasks for scene graph, and confirm the effectiveness of scene graphs generated by our framework.
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Submitted 16 October, 2022;
originally announced October 2022.
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Tunable Ferromagnetism in LaCoO3 Epitaxial Thin Films
Authors:
Dongwon Shin,
Sangmoon Yoon,
Sehwan Song,
Sungkyun Park,
Ho Nyung Lee,
Woo Seok Choi
Abstract:
Ferromagnetic insulators play a crucial role in the development of low-dissipation quantum magnetic devices for spintronics. Epitaxial LaCoO3 thin film is a prominent ferromagnetic insulator, in which the robust ferromagnetic ordering emerges owing to epitaxial strain. Whereas it is evident that strong spin-lattice coupling induces ferromagnetism, the reported ferromagnetic properties of epitaxial…
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Ferromagnetic insulators play a crucial role in the development of low-dissipation quantum magnetic devices for spintronics. Epitaxial LaCoO3 thin film is a prominent ferromagnetic insulator, in which the robust ferromagnetic ordering emerges owing to epitaxial strain. Whereas it is evident that strong spin-lattice coupling induces ferromagnetism, the reported ferromagnetic properties of epitaxially strained LaCoO3 thin films were highly consistent. For example, even under largely modulated degree of strain, the reported Curie temperatures of epitaxially strained LaCoO3 thin films lie within 80-85 K, without much deviation. In this study, substantial enhancement (~18%) in the Curie temperature of epitaxial LaCoO3 thin films is demonstrated via crystallographic orientation dependence. By changing the crystallographic orientation of the films from (111) to (110), the crystal-field energy was reduced and the charge transfer between the Co and O orbitals was enhanced. These modifications led to a considerable enhancement of the ferromagnetic properties (including the Curie temperature and magnetization), despite the identical nominal degree of epitaxial strain. The findings of this study provide insights into facile tunability of ferromagnetic properties via structural symmetry control in LaCoO3.
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Submitted 16 June, 2022;
originally announced June 2022.
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Hypergraph Transformer: Weakly-supervised Multi-hop Reasoning for Knowledge-based Visual Question Answering
Authors:
Yu-Jung Heo,
Eun-Sol Kim,
Woo Suk Choi,
Byoung-Tak Zhang
Abstract:
Knowledge-based visual question answering (QA) aims to answer a question which requires visually-grounded external knowledge beyond image content itself. Answering complex questions that require multi-hop reasoning under weak supervision is considered as a challenging problem since i) no supervision is given to the reasoning process and ii) high-order semantics of multi-hop knowledge facts need to…
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Knowledge-based visual question answering (QA) aims to answer a question which requires visually-grounded external knowledge beyond image content itself. Answering complex questions that require multi-hop reasoning under weak supervision is considered as a challenging problem since i) no supervision is given to the reasoning process and ii) high-order semantics of multi-hop knowledge facts need to be captured. In this paper, we introduce a concept of hypergraph to encode high-level semantics of a question and a knowledge base, and to learn high-order associations between them. The proposed model, Hypergraph Transformer, constructs a question hypergraph and a query-aware knowledge hypergraph, and infers an answer by encoding inter-associations between two hypergraphs and intra-associations in both hypergraph itself. Extensive experiments on two knowledge-based visual QA and two knowledge-based textual QA demonstrate the effectiveness of our method, especially for multi-hop reasoning problem. Our source code is available at https://github.com/yujungheo/kbvqa-public.
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Submitted 21 April, 2022;
originally announced April 2022.
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Atomistic Engineering of Phonons in Functional Oxide Heterostructures
Authors:
Seung Gyo Jeong,
Ambrose Seo,
Woo Seok Choi
Abstract:
Engineering of phonons, i.e., collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron-phonon interaction, confinement of lattice vibration, and optical polarization. Most approaches to phonon-engineering have been largely limited to the high-quality heterostructures of typical semiconductors. Yet, artificial engi…
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Engineering of phonons, i.e., collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron-phonon interaction, confinement of lattice vibration, and optical polarization. Most approaches to phonon-engineering have been largely limited to the high-quality heterostructures of typical semiconductors. Yet, artificial engineering of phonons in a variety of materials with functional properties, such as complex oxides, will yield unprecedented applications of coherent tunable phonons in future quantum acoustic devices. In this study, we demonstrate artificial engineering of phonons in the atomic-scale SrRuO3/SrTiO3 superlattices, wherein tunable phonon modes were observed via confocal Raman spectroscopy. In particular, the coherent superlattices led to the backfolding of acoustic phonon dispersion, resulting in zone-folded acoustic phonons in the THz frequency domain. We could further fine-tune the frequencies from 1 to 2 THz via atomic-scale precision thickness control. In addition, we observed a polar optical phonon originating from the local inversion symmetry breaking in the artificial oxide superlattices, exhibiting emergent functionality. Our approach of atomic-scale heterostructuring of complex oxides will vastly expand material systems for quantum acoustic devices, especially with the viability of functionality integration.
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Submitted 3 February, 2022;
originally announced February 2022.
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Unconventional interlayer exchange coupling via chiral phonons in synthetic magnetic oxide heterostructures
Authors:
Seung Gyo Jeong,
Jiwoong Kim,
Ambrose Seo,
Sungkyun Park,
Hu Young Jeong,
Young-Min Kim,
Valeria Lauter,
Takeshi Egam,
Jung Hoon Han,
Woo Seok Choi
Abstract:
Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) he…
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Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) heterostructures. Owing to the unconventional interlayer exchange interaction, we have observed rotation of magnetic moments as a function of nonmagnetic insulating spacer thickness, resulting in a spin spiral state. The chiral phonon-spin coupling is further confirmed by phonon Zeeman effects. The existence of the chiral phonons and their interplay with spins along with our atomic-scale heterostructure approach open a window to unveil the crucial roles of chiral phonons in magnetic materials.
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Submitted 3 February, 2022;
originally announced February 2022.
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Toward a Human-Level Video Understanding Intelligence
Authors:
Yu-Jung Heo,
Minsu Lee,
Seongho Choi,
Woo Suk Choi,
Minjung Shin,
Minjoon Jung,
Jeh-Kwang Ryu,
Byoung-Tak Zhang
Abstract:
We aim to develop an AI agent that can watch video clips and have a conversation with human about the video story. Developing video understanding intelligence is a significantly challenging task, and evaluation methods for adequately measuring and analyzing the progress of AI agent are lacking as well. In this paper, we propose the Video Turing Test to provide effective and practical assessments o…
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We aim to develop an AI agent that can watch video clips and have a conversation with human about the video story. Developing video understanding intelligence is a significantly challenging task, and evaluation methods for adequately measuring and analyzing the progress of AI agent are lacking as well. In this paper, we propose the Video Turing Test to provide effective and practical assessments of video understanding intelligence as well as human-likeness evaluation of AI agents. We define a general format and procedure of the Video Turing Test and present a case study to confirm the effectiveness and usefulness of the proposed test.
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Submitted 17 October, 2021; v1 submitted 8 October, 2021;
originally announced October 2021.
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Correlated Oxide Dirac Semimetal in the Extreme Quantum Limit
Authors:
Jong Mok Ok,
Narayan Mohanta,
Jie Zhang,
Sangmoon Yoon,
Satoshi Okamoto,
Eun Sang Choi,
Hua Zhou,
Megan Briggeman,
Patrick Irvin,
Andrew R. Lupini,
Yun-Yi Pai,
Elizabeth Skoropata,
Changhee Sohn,
Haoxiang Li,
Hu Miao,
Benjamin Lawrie,
Woo Seok Choi,
Gyula Eres,
Jeremy Levy,
Ho Nyung Lee
Abstract:
Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band struct…
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Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO3 films reveal ultra-high mobility (100,000 cm2/Vs), exceptionally small effective mass (0.04me), and non-zero Berry phase. More importantly, strained SrNbO3 films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO3 is a rare example of a correlated topological QM, in which strong correlation of Dirac electrons leads to the realization of fractional occupation of Landau levels.
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Submitted 18 August, 2021;
originally announced August 2021.
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Defect engineering of magnetic ground state in EuTiO$_3$ epitaxial thin films
Authors:
Dongwon Shin,
Inseo Kim,
Sehwan Song,
Yu-Seong Seo,
Jungseek Hwang,
Sungkyun Park,
Minseok Choi,
Woo Seok Choi
Abstract:
Atomistic defect engineering through the pulsed laser epitaxy of perovskite transition metal oxides offers facile control of their emergent opto-electromagnetic and energy properties. Among the various perovskite oxides, EuTiO3 exhibits a strong coupling between the lattice, electronic, and magnetic degrees of freedom. This coupling is highly susceptible to atomistic defects. In this study, we inv…
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Atomistic defect engineering through the pulsed laser epitaxy of perovskite transition metal oxides offers facile control of their emergent opto-electromagnetic and energy properties. Among the various perovskite oxides, EuTiO3 exhibits a strong coupling between the lattice, electronic, and magnetic degrees of freedom. This coupling is highly susceptible to atomistic defects. In this study, we investigated the magnetic phase of EuTiO$_3$ epitaxial thin films via systematic defect engineering. A magnetic phase transition from an antiferromagnet to a ferromagnet was observed when the unit cell volume of EuTiO3 expanded due to the introduction of Eu-O vacancies. Optical spectroscopy and density functional theory calculations show that the change in the electronic structure as the ferromagnetic phase emerges can be attributed to the weakened Eu-Ti-Eu super-exchange interaction and the developed ferromagnetic Eu-O-Eu interaction. Facile defect engineering in EuTiO$_3$ thin films facilitates understanding and tailoring of their magnetic ground state.
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Submitted 16 July, 2021;
originally announced July 2021.
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Epitaxial stabilization of metastable 3C BaRuO3 thin film with ferromagnetic non-Fermi liquid phase
Authors:
Sang A Lee,
Jong Mok Ok,
Jegon Lee,
Jae-Yeol Hwang,
Sangmon Yoon,
Se-Jeong Park,
Sehwan Song,
Jong-Seong Bae,
Sungkyun Park,
Ho Nyung Lee,
Woo Seok Choi
Abstract:
Thin films of perovskite Ruthenates of the general formula ARuO3 (A = Ca and Sr) are versatile electrical conductors for viable oxide electronics. They are also scientifically intriguing, as they exhibit non-trivial electromagnetic ground states depending on the A-site element. Among them, realization of the cubic perovskite (3C) BaRuO3 thin film has been a challenge so far, because the 3C phase i…
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Thin films of perovskite Ruthenates of the general formula ARuO3 (A = Ca and Sr) are versatile electrical conductors for viable oxide electronics. They are also scientifically intriguing, as they exhibit non-trivial electromagnetic ground states depending on the A-site element. Among them, realization of the cubic perovskite (3C) BaRuO3 thin film has been a challenge so far, because the 3C phase is metastable with the largest formation energy among the various polymorph phases of BaRuO3. In this study, we successfully prepared 3C BaRuO3 thin films employing epitaxial stabilization. The 3C BaRuO3 thin films show itinerant ferromagnetism with a transition temperature of ~48 K and a non-Fermi liquid phase. The epitaxial stabilization of the 3C BaRuO3 further enabled us to make a standard comparison of perovskite Ruthenates thin films, thereby establishing the importance of the Ru-O orbital hybridization in understanding the itinerant magnetic system.
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Submitted 15 July, 2021;
originally announced July 2021.
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Color of Copper/Copper oxide
Authors:
Su Jae Kim,
Seonghoon Kim,
Jegon Lee,
Youngjae Jo,
Yu-Seong Seo,
Myounghoon Lee,
Yousil Lee,
Chae Ryong Cho,
Jong-pil Kim,
Miyeon Cheon,
Jungseek Hwang,
Yong In Kim,
Young-Hoon Kim,
Young-Min Kim,
Aloysius Soon,
Myunghwan Choi,
Woo Seok Choi,
Se-Young Jeong,
Young Hee Lee
Abstract:
Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. We demonstrate coherent propagation of an oxidation front in single-crystal Cu thin film to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer t…
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Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. We demonstrate coherent propagation of an oxidation front in single-crystal Cu thin film to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer thickness. Grain boundary-free and atomically flat films prepared by atomic-sputtering epitaxy allow tailoring of the oxide layer with an abrupt interface via heat treatment with a suppressed temperature gradient. Color tuning of nearly full-color RGB indices is realized by precise control of oxide-layer thickness; our samples covered ~50.4% of the sRGB color space. The color of copper/copper oxide is realized by the reconstruction of the quantitative yield color from oxide pigment (complex dielectric functions of Cu2O) and light-layer interference (reflectance spectra obtained from the Fresnel equations) to produce structural color. We further demonstrate laser-oxide lithography with micron-scale linewidth and depth through local phase transformation to oxides embedded in the metal, providing spacing necessary for semiconducting transport and optoelectronics functionality.
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Submitted 15 July, 2021;
originally announced July 2021.
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Atomic structure of initial nucleation layer in hexagonal perovskite BaRuO$_3$ thin films
Authors:
Sangmoon Yoon,
Jong Mok Ok,
Sang A Lee,
Jegon Lee,
Andrew R. Lupini,
Woo Seok Choi,
Ho Nyung Lee
Abstract:
Hexagonal perovskites are an attractive group of materials due to their various polymorph phases and rich structure-property relationships. BaRuO3 (BRO) is a prototypical hexagonal perovskite, in which the electromagnetic properties are significantly modified depending on its atomic structure. Whereas thin-film epitaxy would vastly expand the application of hexagonal perovskites by epitaxially sta…
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Hexagonal perovskites are an attractive group of materials due to their various polymorph phases and rich structure-property relationships. BaRuO3 (BRO) is a prototypical hexagonal perovskite, in which the electromagnetic properties are significantly modified depending on its atomic structure. Whereas thin-film epitaxy would vastly expand the application of hexagonal perovskites by epitaxially stabilizing various metastable polymorphs, the atomic structure of epitaxial hexagonal perovskites, especially at the initial growth stage, has rarely been investigated. In this study, we show that an intriguing nucleation behavior takes place during the initial stabilization of a hexagonal perovskite 9R BaRuO3 (BRO) thin film on a (111) SrTiO3 (STO) substrate. We use high-resolution high-angle annular dark field scanning transmission electron microscopy in combination with geometrical phase analysis to understand the local strain relaxation behavior. We find that nano-scale strained layers, composed of different RuO6 octahedral stacking, are initially formed at the interface, followed by a relaxed single crystal9R BRO thin film. Within the interface layer, hexagonal BROs are nucleated on the STO (111) substrate by both corner- and face-sharing. More interestingly, we find that the boundaries between the differently-stacked nucleation layers, i.e. heterostructural boundaries facilitates strain relaxation, in addition to the formation of conventional misfit dislocations evolving from homostructural boundaries. Our observations reveal an important underlying mechanism to understand the thin-film epitaxy and strain accommodation in hexagonal perovskites.
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Submitted 15 July, 2021;
originally announced July 2021.
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Tailoring topological Hall effect in SrRuO3/SrTiO3 superlattices
Authors:
Seong Won Cho,
Seung Gyo Jeong,
Hee Young Kwon,
Sehwan Song,
Seungwu Han,
Jung Hoon Han,
Sungkyun Park,
Woo Seok Choi,
Suyoun Lee,
Jun Woo Choi
Abstract:
Investigating the effects of the complex magnetic interactions on the formation of nontrivial magnetic phases enables a better understanding of magnetic materials. Moreover, an effective method to systematically control those interactions and phases could be extensively utilized in spintronic devices. SrRuO3 heterostructures function as a suitable material system to investigate the complex magneti…
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Investigating the effects of the complex magnetic interactions on the formation of nontrivial magnetic phases enables a better understanding of magnetic materials. Moreover, an effective method to systematically control those interactions and phases could be extensively utilized in spintronic devices. SrRuO3 heterostructures function as a suitable material system to investigate the complex magnetic interactions and the resultant formation of topological magnetic phases, as the heterostructuring approach provides an accessible controllability to modulate the magnetic interactions. In this study, we have observed that the Hall effect of SrRuO3/SrTiO3 superlattices varies nonmonotonically with the repetition number (z). Using Monte Carlo simulations, we identify a possible origin of this experimental observation: the interplay between the Dzyaloshinskii-Moriya interaction and dipole-dipole interaction, which have differing z-dependence, might result in a z-dependent modulation of topological magnetic phases. This approach provides not only a collective understanding of the magnetic interactions in artificial heterostructures but also a facile control over the skyrmion phases.
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Submitted 15 July, 2021;
originally announced July 2021.
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Tuning magnetic and optical properties through strain in epitaxial LaCrO3 thin films
Authors:
Yogesh Sharma,
Binod Paudel,
Jegon Lee,
Woo Seok Choi,
Zhenzhong Yang,
Han Wang,
Yingge Du,
Kyeong Tae Kang,
Ghanshyam Pilania,
Aiping Chen
Abstract:
We report on the effect of epitaxial strain on magnetic and optical properties of perovskite LaCrO3 (LCO) single crystal thin films. Epitaxial LCO thin films are grown by pulsed laser deposition on proper choice of substrates to impose different strain states. A combined experimental and theoretical approach is used to demonstrate the direct correlation between lattice-strain and functional proper…
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We report on the effect of epitaxial strain on magnetic and optical properties of perovskite LaCrO3 (LCO) single crystal thin films. Epitaxial LCO thin films are grown by pulsed laser deposition on proper choice of substrates to impose different strain states. A combined experimental and theoretical approach is used to demonstrate the direct correlation between lattice-strain and functional properties. The magnetization results show that the lattice anisotropy plays a critical role in controlling the magnetic behavior of LCO films. The strain induced tetragonality in the film lattice strongly affects the optical transitions and charge transfer gap in LCO. This study opens new possibilities to tailoring the functional properties of LCO and related materials by strain engineering in epitaxial growth.
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Submitted 6 May, 2021;
originally announced May 2021.
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Strain-induced atomic-scale building blocks for ferromagnetism in epitaxial LaCoO3
Authors:
Sangmoon Yoon,
Xiang Gao,
Jong Mok Ok,
Zhaoliang Liao,
Myung-Geun Han,
Yimei Zhu,
Panchapakesan Ganesh,
Matthew F. Chisholm,
Woo Seok Choi,
Ho Nyung Lee
Abstract:
The origin of strain-induced ferromagnetism, which is robust regardless of the type and degree of strain in LaCoO3 (LCO) thin films, is enigmatic despite intensive research efforts over the past decade. Here, by combining scanning transmission electron microscopy with ab initio density functional theory plus U calculations, we report that the ferromagnetism does not emerge directly from the strain…
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The origin of strain-induced ferromagnetism, which is robust regardless of the type and degree of strain in LaCoO3 (LCO) thin films, is enigmatic despite intensive research efforts over the past decade. Here, by combining scanning transmission electron microscopy with ab initio density functional theory plus U calculations, we report that the ferromagnetism does not emerge directly from the strain itself, but rather from the creation of compressed structural units within ferroelastically formed twin-wall domains. The compressed structural units are magnetically active with the rocksalt-type high-spin/low-spin order. Our study highlights that the ferroelastic nature of ferromagnetic structural units is important for understanding the intriguing ferromagnetic properties in LCO thin films.
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Submitted 4 May, 2021;
originally announced May 2021.
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Atomistic deformation behavior of single and twin crystalline Cu nanopillars with preexisting dislocations
Authors:
Won-Seok Ko,
Alexander Stukowski,
Raheleh Hadian,
Ali Nematollahi,
Jong Bae Jeon,
Won Seok Choi,
Gerhard Dehm,
Jörg Neugebauer,
Christoph Kirchlechner,
Blazej Grabowski
Abstract:
Molecular dynamics simulations are performed to investigate the role of a coherent Σ3 (111) twin boundary on the plastic deformation behavior of Cu nanopillars. Our work reveals that the mechanical response of pillars with and without the twin boundary is decisively driven by the characteristics of initial dislocation sources. In the condition of comparably large pillar size and abundant initial m…
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Molecular dynamics simulations are performed to investigate the role of a coherent Σ3 (111) twin boundary on the plastic deformation behavior of Cu nanopillars. Our work reveals that the mechanical response of pillars with and without the twin boundary is decisively driven by the characteristics of initial dislocation sources. In the condition of comparably large pillar size and abundant initial mobile dislocations, overall yield and flow stresses are controlled by the longest, available mobile dislocation. An inverse correlation of the yield and flow stresses with the length of the longest dislocation is established, and its extrapolation agrees well with experimental yield stress data. The experimentally reported subtle differences in yield and flow stresses between pillars with and without the twin boundary are thus likely related to the maximum lengths of the mobile dislocations. In the condition of comparably small pillar size, for which a reduction of mobile dislocations during heat treatment and mechanical loading occurs, the mechanical response of pillars with and without the twin boundary can be clearly distinguished. Dislocation starvation during deformation is more clearly present in pillars without the twin boundary than in pillars with the twin boundary because the twin boundary acts as a pinning surface for the dislocation network.
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Submitted 8 April, 2021; v1 submitted 8 April, 2021;
originally announced April 2021.
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Dissecting functional degradation in NiTi shape-memory-alloys containing amorphous regions via atomistic simulations
Authors:
Won-Seok Ko,
Won Seok Choi,
Guanglong Xu,
Pyuck-Pa Cho,
Yuji Ikeda,
Blazej Grabowski
Abstract:
Molecular dynamics simulations are performed to provide a detailed understanding of the functional degradation of shape memory alloys at small scale. The origin of the experimentally reported accumulation of plastic deformation and the anomalous sudden increase of the residual strain under cyclic mechanical loading are explained by detailed insights into the relevant atomic scale processes. Our wo…
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Molecular dynamics simulations are performed to provide a detailed understanding of the functional degradation of shape memory alloys at small scale. The origin of the experimentally reported accumulation of plastic deformation and the anomalous sudden increase of the residual strain under cyclic mechanical loading are explained by detailed insights into the relevant atomic scale processes. Our work reveals that the mechanical response of shape-memory-alloy pillars under cyclic compression is significantly influenced by the presence of an amorphous-like surface region as experimentally induced by focused ion beam milling. The main factor responsible for the observed degradation of superelasticity under cyclic loading is the accumulated plastic deformation and the resultant retained martensite originating from a synergetic contribution of the amorphous and crystalline shape-memory-alloy regions. We show that the reported sudden diminishment of the stress plateaus and hysteresis under cyclic loading is caused by the increased stability of the martensite phase due to the presence of the amorphous phase. Based on the identified mechanism responsible for the degradation, we validate reported methods of recovering the superelasticity and propose a new method to prohibit the synergetic contribution of the amorphous and crystalline regions, such as to achieve a sustainable operation of shape memory alloys at small scale.
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Submitted 31 March, 2021; v1 submitted 26 March, 2021;
originally announced March 2021.
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Symmetry-Driven Spin-Wave Gap Modulation in Nanolayered SrRuO3/SrTiO3 Heterostructures: Implications for Spintronic Applications
Authors:
Seung Gyo Jeong,
Hyeonbeom Kim,
Sung Ju Hong,
Dongseok Suh,
Woo Seok Choi
Abstract:
A strong correlation between magnetic interaction and topological symmetries leads to unconventional magneto-transport behavior. Weyl fermions induce topologically protected spin-momentum locking, which is closely related to spin-wave gap formation in magnetic crystals. Ferromagnetic SrRuO3, regarded as a strong candidate for Weyl semimetal, inherently possesses a nonzero spin-wave gap owing to it…
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A strong correlation between magnetic interaction and topological symmetries leads to unconventional magneto-transport behavior. Weyl fermions induce topologically protected spin-momentum locking, which is closely related to spin-wave gap formation in magnetic crystals. Ferromagnetic SrRuO3, regarded as a strong candidate for Weyl semimetal, inherently possesses a nonzero spin-wave gap owing to its strong magnetic anisotropy. In this paper, we propose a method to control the spin-wave dynamics by nanolayer designing of the SrRuO3/SrTiO3 superlattices. In particular, the six-unit-cell-thick SrRuO3 layers within the superlattices undergo a phase transition in crystalline symmetry from orthorhombic to tetragonal, as the thickness of the SrTiO3 layers is modulated with atomic-scale precision. Consequently, the magnetic anisotropy, anomalous Hall conductivity, and spin-wave gap could be systematically manipulated. Such customization of magnetic anisotropy via nanoscale heterostructuring offers a novel control knob to tailor the magnon excitation energy for future spintronic applications, including magnon waveguides and filters. Our nanolayer approach unveils the important correlation between the tunable lattice degrees of freedom and spin dynamics in topologically non-trivial magnetic materials.
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Submitted 5 February, 2021;
originally announced February 2021.
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Crystalline symmetry-dependent magnon formation in itinerant ferromagnet SrRuO3
Authors:
Hyun Il Seo,
Sungmin Woo,
Jihyun Kim,
Seung Gyo Jeong,
Tuson Park,
Woo Seok Choi
Abstract:
SrRuO3 (SRO) is an itinerant ferromagnet with strong coupling between the charge, spin, and lattice degrees of freedom. This strong coupling suggests that the electronic and magnetic behaviors of SRO are highly susceptible to changes in the lattice distortion. Here we show how the spin interaction and resultant magnon formation change with the modification in the crystallographic orientation. We f…
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SrRuO3 (SRO) is an itinerant ferromagnet with strong coupling between the charge, spin, and lattice degrees of freedom. This strong coupling suggests that the electronic and magnetic behaviors of SRO are highly susceptible to changes in the lattice distortion. Here we show how the spin interaction and resultant magnon formation change with the modification in the crystallographic orientation. We fabricated SRO epitaxial thin films with (100), (110), and (111) surface orientations, to systematically modulate the spin interaction and spin dimensionality. The reduced spin dimensionality and enhanced exchange interaction in the (111)-oriented SRO thin film significantly suppresses magnon formation. Our study comprehensively demonstrates the facile tunability of magnon formation and spin interaction in correlated oxide thin films.
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Submitted 22 December, 2020;
originally announced December 2020.
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Propagation control of octahedral tilt in SrRuO3 via artificial heterostructuring
Authors:
Seung Gyo Jeong,
Gyeongtak Han,
Sehwan Song,
Taewon Min,
Ahmed Yousef Mohamed,
Sungkyun Park,
Jaekwang Lee,
Hu Young Jeong,
Young-Min Kim,
Deok-Yong Cho,
Woo Seok Choi
Abstract:
Bonding geometry engineering of metal-oxygen octahedra is a facile way of tailoring various functional properties of transition metal oxides. Several approaches, including epitaxial strain, thickness, and stoichiometry control, have been proposed to efficiently tune the rotation and tilting of the octahedra, but these approaches are inevitably accompanied by unnecessary structural modifications su…
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Bonding geometry engineering of metal-oxygen octahedra is a facile way of tailoring various functional properties of transition metal oxides. Several approaches, including epitaxial strain, thickness, and stoichiometry control, have been proposed to efficiently tune the rotation and tilting of the octahedra, but these approaches are inevitably accompanied by unnecessary structural modifications such as changes in thin-film lattice parameters. In this study, we propose a method to selectively engineer the octahedral bonding geometries, while maintaining other parameters that might implicitly influence the functional properties. A concept of octahedral tilt propagation engineering has been developed using atomically designed SrRuO3/SrTiO3 superlattices. In particular, the propagation of RuO6 octahedral tilting within the SrRuO3 layers having identical thicknesses was systematically controlled by varying the thickness of adjacent SrTiO3 layers. This led to a substantial modification in the electromagnetic properties of the SrRuO3 layer, significantly enhancing the magnetic moment of Ru. Our approach provides a method to selectively manipulate the bonding geometry of strongly correlated oxides, thereby enabling a better understanding and greater controllability of their functional properties.
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Submitted 25 June, 2020;
originally announced June 2020.
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Pulsed-laser epitaxy of metallic delafossite PdCrO$_2$ films
Authors:
Jong Mok Ok,
Matthew Brahlek,
Woo Seok Choi,
Kevin M. Roccapriore,
Matthew F. Chisholm,
Soyeun Kim,
Changhee Sohn,
Elizabeth Skoropata,
Sangmoon Yoon,
Jun Sung Kim,
Ho Nyung Lee
Abstract:
Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of the material may enable not only tuning the basic physical properties beyond what bulk materials can exhibit, but also developing novel hybrid materials by interfacing with d…
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Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of the material may enable not only tuning the basic physical properties beyond what bulk materials can exhibit, but also developing novel hybrid materials by interfacing with dissimilar materials, yet this has proven to be extremely challenging. Here, we report the epitaxial growth of metallic delafossite PdCrO2 films by pulsed laser epitaxy (PLE). The fundamental role of the PLE growth conditions, epitaxial strain, and chemical and structural characteristics of the substrate is investigated by growing under various growth conditions and on various types of substrates. While strain plays a large role in improving the crystallinities, the direct growth of epitaxial PdCrO2 films without impurity phases was not successful. We attribute this difficulty to both the chemical and structural dissimilarities between the substrates and volatile nature of PdO layer, which make nucleation of the right phase difficult. This difficulty was overcome by growing CuCrO2 buffer layers before PdCrO2 were grown. Unlike PdCrO2, CuCrO2 films were rather readily grown with a relatively wide growth window. Only monolayer thick buffer layer was sufficient to grow the correct PdCrO2 phase. This result indicates that the epitaxy of Pd-based delafossites is extremely sensitive to the chemistry and structure of the interface, necessitating near perfect substrate materials. The resulting films are commensurately strained and show an antiferromagnetic transition at 40 K that persists down to as thin as 3.6 nm in thickness.
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Submitted 20 February, 2020; v1 submitted 19 February, 2020;
originally announced February 2020.
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Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal
Authors:
Seung Gyo Jeong,
Taewon Min,
Sungmin Woo,
Jiwoong Kim,
Yu-Qiao Zhang,
Seong Won Cho,
Jaeseok Son,
Young-Min Kim,
Jung Hoon Han,
Sungkyun Park,
Hu Young Jeong,
Hiromichi Ohta,
Suyoun Lee,
Tae Won Noh,
Jaekwang Lee,
Woo Seok Choi
Abstract:
Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled an…
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Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled and induced metal-insulator transition (MIT) in atomically designed superlattices by synthesizing a genuine two dimensional (2D) SrRuO3 crystal with highly suppressed charge transfer. The tendency to ferromagnetically align the spins in SrRuO3 layer diminishes in 2D as the interlayer exchange interaction vanishes, accompanying the 2D localization of electrons. Furthermore, electronic and magnetic instabilities in the two SrRuO3 unit cell layers induce a thermally-driven MIT along with a metamagnetic transition.
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Submitted 24 November, 2019;
originally announced November 2019.
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Room Temperature Ferroelectric Ferromagnet in 1D Tetrahedral Chain Network
Authors:
Kyeong Tae Kang,
Chang Jae Roh,
Jinyoung Lim,
Taewon Min,
Jun Han Lee,
Kyoungjun Lee,
Tae Yoon Lee,
Seunghun Kang,
Daehee Seol,
Jiwoong Kim,
Hiromichi Ohta,
Amit Khare,
Sungkyun Park,
Yunseok Kim,
Seung Chul Chae,
Yoon Seok Oh,
Jaekwang Lee,
Jaejun Yu,
Jong Seok Lee,
Woo Seok Choi
Abstract:
Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous polarization. Meanwhile, some two-dimensional networks of MOx can foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Be…
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Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous polarization. Meanwhile, some two-dimensional networks of MOx can foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Because of the fundamentally different mechanism of ferroelectricity in a two-dimensional network, one can further challenge an uncharted mechanism of ferroelectricity in a one-dimensional channel of MOx and estimate its feasibility. This communication presents ferroelectricity and coupled ferromagnetism in a one-dimensional FeO4 tetrahedral chain network of a brownmillerite SrFeO2.5 epitaxial thin film. The result provides a new paradigm for designing low-dimensional MOx networks, which is expected to benefit the realization of macroscopic ferro-ordering materials including ferroelectric ferromagnets.
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Submitted 8 May, 2019;
originally announced May 2019.
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Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures
Authors:
Kyeong Tae Kang,
Jeongmin Park,
Dongseok Suh,
Woo Seok Choi
Abstract:
The marriage between a two-dimensional layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that would not have been achieved in either material alone. Interesting recent discoveries in systems such as graphene/SrTiO3, graphene/LaAlO3/SrTiO3, graphene/ferroelectric oxide, MoS2/SrTiO3, and FeSe/SrTiO3 heterostructures include vol…
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The marriage between a two-dimensional layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that would not have been achieved in either material alone. Interesting recent discoveries in systems such as graphene/SrTiO3, graphene/LaAlO3/SrTiO3, graphene/ferroelectric oxide, MoS2/SrTiO3, and FeSe/SrTiO3 heterostructures include voltage scaling in field-effect transistors, charge state coupling across an interface, quantum conductance probing of the electrochemical activity, novel memory functions based on charge traps, and greatly enhanced superconductivity. In this progress report, we review various properties and functionalities appearing in numerous different 2DLM/TMO heterostructure systems. The results imply that the multidimensional heterostructure approach based on the disparate material systems leads to an entirely new platform for the study of condensed matter physics and materials science. The heterostructures are also highly relevant technologically, as each constituent material is a promising candidate for next-generation opto-electronic devices.
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Submitted 8 May, 2019;
originally announced May 2019.
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Ferroelectric polarization rotation in order-disorder-type LiNbO3 thin films
Authors:
Tae Sup Yoo,
Sang A Lee,
Changjae Roh,
Seunghun Kang,
Daehee Seol,
Xinwei Guan,
Jong-Seong Bae,
Jiwoong Kim,
Young-Min Kim,
Hu Young Jeong,
Seunggyo Jeong,
Ahmed Yousef Mohamed,
Deok-Yong Cho,
Ji Young Jo,
Sungkyun Park,
Tom Wu,
Yunseok Kim,
Jongseok Lee,
Woo Seok Choi
Abstract:
The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we rep…
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The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we report the observation of continuous rotation of ferroelectric polarization in order-disorder type LiNbO3 thin films. The spontaneous polarization could be tilted from an out-of-plane to an in-plane direction in the thin film by controlling the Li vacancy concentration within the hexagonal lattice framework. Partial inclusion of monoclinic-like phase is attributed to the breaking of macroscopic inversion symmetry along different directions and the emergence of ferroelectric polarization along the in-plane direction.
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Submitted 7 December, 2018;
originally announced December 2018.
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Oxygen vacancy-induced structural evolution of SrFeO$_{3-x}$ epitaxial thin film from brownmillerite to perovskite
Authors:
Seulki Roh,
Seokbae Lee,
Myounghoon Lee,
Yu-Seong Seo,
Amit Khare,
Taesup Yoo,
Sungmin Woo,
Woo Seok Choi,
Jungseek Hwang,
A. Glamazda,
K. -Y. Choi
Abstract:
We investigated SrFeO$_{3-x}$ thin films on a SrTiO$_3$ (001) substrate prepared via pulsed laser epitaxy using an optical spectroscopy technique. The oxygen vacancy level ($x$) was controlled by post-annealing processes at different oxygen partial pressures. We achieved a brownmillerite(BM) structure at $x =$ 0.5 and observed the evolution of the crystal structure from BM into perovskite(PV) as t…
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We investigated SrFeO$_{3-x}$ thin films on a SrTiO$_3$ (001) substrate prepared via pulsed laser epitaxy using an optical spectroscopy technique. The oxygen vacancy level ($x$) was controlled by post-annealing processes at different oxygen partial pressures. We achieved a brownmillerite(BM) structure at $x =$ 0.5 and observed the evolution of the crystal structure from BM into perovskite(PV) as the oxygen concentration increased. We observed the evolution of infrared-active phonons with respect to the oxygen concentration, which was closely related to the structural evolution observed via X-ray diffraction. We identified the phonons using the shell-model calculation. Furthermore, we studied temperature-dependent behaviors of the phonon modes of three representative samples: PV, and two BMs (BM$_{\mathrm{oop}}$ and BM$_{\mathrm{ip}}$) with different orientations of the oxygen vacancy channel. In the BM$_{\mathrm{oop}}$ sample, we observed a phonon mode, which exhibited an unusual red-shift with decreasing temperature; this behavior may have been due to the apical oxygen instability in the FeO$_6$ octahedron. Our results provide important information regarding the ionic conduction mechanism in SrFeO$_{3-x}$ material systems.
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Submitted 18 August, 2018;
originally announced August 2018.
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Enhanced magnetic and thermoelectric properties in epitaxial polycrystalline SrRuO3 thin film
Authors:
Sungmin Woo,
Sang A Lee,
Hyeona Mun,
Young Gwan Choi,
Chan June Zhung,
Soohyeon Shin,
Morgane Lacotte,
Adrian David,
Wilfrid Prellier,
Tuson Park,
Won Nam Kang,
Jong Seok Lee,
Sung Wng Kim,
Woo Seok Choi
Abstract:
Transition metal oxide thin films show versatile electrical, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the modification of the magnetic and thermal transport properties by fabricating single- and polycrystalline epitaxial SrRuO3 thin films using pulsed laser epitaxy. Using e…
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Transition metal oxide thin films show versatile electrical, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the modification of the magnetic and thermal transport properties by fabricating single- and polycrystalline epitaxial SrRuO3 thin films using pulsed laser epitaxy. Using epitaxial stabilization technique with atomically flat polycrystalline SrTiO3 substrate, epitaxial polycrystalline SrRuO3 thin film with crystalline quality of each grain comparable to that of single-crystalline counterpart is realized. In particular, alleviated compressive strain near the grain boundaries due to coalescence is evidenced structurally, which induced enhancement of ferromagnetic ordering of the polycrystalline epitaxial thin film. The structural variations associated with the grain boundaries further reduce the thermal conductivity without deteriorating the electronic transport, and lead to enhanced thermoelectric efficiency in the epitaxial polycrystalline thin films, compared with their single-crystalline counterpart.
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Submitted 17 April, 2018;
originally announced April 2018.
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Ex-situ atomic force microscopy on the growth mode of SrRuO3 epitaxial thin film
Authors:
Bora Kim,
Sang A Lee,
Daehee Seol,
Woo Seok Choi,
Yunseok Kim
Abstract:
The functional properties of devices based on perovskite oxides depend strongly on the growth modes that dramatically affect surface morphology and microstructure of the hetero-structured thin films. To achieve atomically flat surface morphology, which is usually a necessity for the high quality devices, understanding of the growth mechanism of heteroepitaxial thin film is indispensable. In this s…
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The functional properties of devices based on perovskite oxides depend strongly on the growth modes that dramatically affect surface morphology and microstructure of the hetero-structured thin films. To achieve atomically flat surface morphology, which is usually a necessity for the high quality devices, understanding of the growth mechanism of heteroepitaxial thin film is indispensable. In this study, we explore heteroepitaxial growth kinetics of the SrRuO3 using intermittent growth scheme of pulsed laser epitaxy and ex-situ atomic force microscopy. Two significant variations in surface roughness during deposition of the first unit cell layer were observed from atomic force microscopy indicating the possible formation of the half unit cell of the SrRuO3 before the complete formation of the first unit cell. In addition, layer-by-layer growth mode dominated during the first two unit cell layer deposition of the SrRuO3 thin film. Our observation provides underlying growth mechanism of the heteroepitaxial SrRuO3 thin film on the SrTiO3 substrate during the initial growth of the thin film.
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Submitted 8 October, 2017;
originally announced October 2017.
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Tuning electromagnetic properties of SrRuO3 epitaxial thin films via atomic control of cation vacancies
Authors:
Sang A Lee,
Seokjae Oh,
Jegon Lee,
Jae-Yeol Hwang,
Jiwoong Kim,
Sungkyun Park,
Jong-Seong Bae,
Tae Eun Hong,
Suyoun Lee,
Sung Wng Kim,
Won Nam Kang,
Woo Seok Choi
Abstract:
Elemental defects in transition metal oxides is an important and intriguing subject that result in modifications in variety of physical properties including atomic and electronic structure, optical and magnetic properties. Understanding the formation of elemental vacancies and their influence on different physical properties is essential in studying the complex oxide thin films. In this study, we…
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Elemental defects in transition metal oxides is an important and intriguing subject that result in modifications in variety of physical properties including atomic and electronic structure, optical and magnetic properties. Understanding the formation of elemental vacancies and their influence on different physical properties is essential in studying the complex oxide thin films. In this study, we investigated the physical properties of epitaxial SrRuO3 thin films by systematically manipulating cation and/or oxygen vacancies, via changing the oxygen partial pressure (P(O2)) during the pulsed laser epitaxy (PLE) growth. Ru vacancies in the low-P(O2)-grown SrRuO3 thin films induce lattice expansion with the suppression of the ferromagnetic TC down to ~120 K. Sr vacancies also disturb the ferromagnetic ordering, even though Sr is not a magnetic element. Our results indicate that both A and B cation vacancies in an ABO3 perovskite can be systematically engineered via PLE, and the structural, electrical, and magnetic properties can be tailored accordingly.
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Submitted 22 September, 2017;
originally announced September 2017.
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Quantum Conductance Probing of Oxygen Vacancies in SrTiO3 Epitaxial Thin Film Using Graphene
Authors:
Kyeong Tae Kang,
Haeyong Kang,
Jeongmin Park,
Dongseok Suh,
Woo Seok Choi
Abstract:
The quantum Hall conductance in monolayer graphene on an epitaxial SrTiO3 (STO) thin film is studied to understand the role of oxygen vacancies in determining the dielectric properties of STO. As the gate voltage sweep range is gradually increased in our device, we observe systematic generation and annihilation of oxygen vacancies evidenced from the hysteretic conductance behavior in graphene. Fur…
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The quantum Hall conductance in monolayer graphene on an epitaxial SrTiO3 (STO) thin film is studied to understand the role of oxygen vacancies in determining the dielectric properties of STO. As the gate voltage sweep range is gradually increased in our device, we observe systematic generation and annihilation of oxygen vacancies evidenced from the hysteretic conductance behavior in graphene. Furthermore, based on the experimentally observed linear scaling relation between the effective capacitance and the voltage sweep range, a simple model is constructed to manifest the relationship among the dielectric properties of STO with oxygen vacancies. The inherent quantum Hall conductance in graphene can be considered as a sensitive, robust, and non-invasive probe for understanding the electronic and ionic phenomena in complex transition metal oxides without impairing the oxide layer underneath.
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Submitted 16 May, 2017;
originally announced May 2017.
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Enhanced electrocatalytic activity via phase transitions in strongly correlated SrRuO3 thin films
Authors:
Sang A Lee,
Seokjae Oh,
Jae-Yeol Hwang,
Minseok Choi,
Chulmin Youn,
Ji Woong Kim,
Seo Hyoung Chang,
Sungmin Woo,
Jong-Seong Bae,
Sungkyun Park,
Young-Min Kim,
Suyoun Lee,
Taekjib Choi,
Sung Wng Kim,
Woo Seok Choi
Abstract:
Transition metal oxides have been extensively studied and utilized as efficient catalysts. However, the strongly correlated behavior which often results in intriguing emergent phenomena in these materials has been mostly overlooked in understanding the electrochemical activities. Here, we demonstrate a close correlation between the phase transitions and oxygen evolution reaction (OER) in a strongl…
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Transition metal oxides have been extensively studied and utilized as efficient catalysts. However, the strongly correlated behavior which often results in intriguing emergent phenomena in these materials has been mostly overlooked in understanding the electrochemical activities. Here, we demonstrate a close correlation between the phase transitions and oxygen evolution reaction (OER) in a strongly correlated SrRuO3. By systematically introducing Ru-O vacancies into the single-crystalline SrRuO3 epitaxial thin films, we induced phase transition in crystalline symmetry which resulted in corresponding modification in the electronic structure. The modified electronic structure significantly affect the electrochemical activities, so a 30% decrease in the overpotential for the OER activity was achieved. Our study suggests that a substantial enhancement in the OER activity can be realized even within single material systems, by rational design and engineering of their crystal and electronic structures.
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Submitted 11 May, 2017;
originally announced May 2017.
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Highly oriented SrTiO3 thin film on graphene substrate
Authors:
Sang A Lee,
Jae-Yeol Hwang,
Eun Sung Kim,
Sung Wng Kim,
Woo Seok Choi
Abstract:
Growth of perovskite oxide thin films on Si in crystalline form has long been a critical obstacle for the integration of multifunctional oxides into Si-based technologies. In this study, we propose pulsed laser deposition of a crystalline SrTiO3 thin film on a Si using graphene substrate. The SrTiO3 thin film on graphene has a highly (00l)-oriented crystalline structure which results from the part…
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Growth of perovskite oxide thin films on Si in crystalline form has long been a critical obstacle for the integration of multifunctional oxides into Si-based technologies. In this study, we propose pulsed laser deposition of a crystalline SrTiO3 thin film on a Si using graphene substrate. The SrTiO3 thin film on graphene has a highly (00l)-oriented crystalline structure which results from the partial epitaxy. Moreover, graphene promotes a sharp interface by highly suppressing the chemical intermixing. The important role of graphene as a 2D substrate and diffusion barrier allows expansion of device applications based on functional complex oxides.
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Submitted 11 May, 2017;
originally announced May 2017.
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Phase transitions via selective elemental vacancy engineering in complex oxide thin films
Authors:
Sang A Lee,
Hoidong Jeong,
Sungmin Woo,
Jae-Yeol Hwang,
Si-Young Choi,
Sung-Dae Kim,
Minseok Cho,
Seulki Roh,
Hosung Yu,
Jungseek Hwang,
Sung Wng Kim,
Woo Seok Choi
Abstract:
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, oxygen vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to im…
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Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, oxygen vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling oxygen vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structure of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and oxygen vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, oxygen vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.
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Submitted 7 April, 2016;
originally announced April 2016.
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Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film
Authors:
Jeongmin Park,
Haeyong Kang,
Kyeong Tae Kang,
Yoojoo Yun,
Young Hee Lee,
Woo Seok Choi,
Dongseok Suh
Abstract:
Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all te…
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Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.
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Submitted 16 February, 2016;
originally announced February 2016.
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Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films
Authors:
Jonathan R. Petrie,
Chandrima Mitra,
Hyoungjeen Jeen,
Woo Seok Choi,
Tricia L. Meyer,
Fernando A. Reboredo,
John W. Freeland,
Gyula Eres,
Ho Nyung Lee
Abstract:
The ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxia…
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The ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxial strain is a powerful tool for manipulating the oxygen vacancy concentration even under highly oxidizing environments and at annealing temperatures as low as 300 C. By applying a small biaxial tensile strain (2%), the oxygen activation energy barrier decreases by ~30%, resulting in a tunable oxygen deficient steady-state under conditions that would normally fully oxidize unstrained cobaltite. These strain-induced changes in oxygen stoichiometry drive the cobaltite from a ferromagnetic metal towards an antiferromagnetic insulator. The ability to decouple the oxygen vacancy concentration from its typical dependence on the operational environment is useful for effectively designing oxides materials with a specific oxygen stoichiometry.
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Submitted 12 February, 2016;
originally announced February 2016.
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Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum
Authors:
Ho Nyung Lee,
Sung S. Ambrose Seo,
Woo Seok Choi,
Christopher M. Rouleau
Abstract:
In many transition metal oxides (TMOs), oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a cha…
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In many transition metal oxides (TMOs), oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects, even in high vacuum. We use a model homoepitaxial system of SrTiO3 (STO) thin films on single crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Therefore, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but expands the utility of pulsed laser epitaxy of other materials as well.
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Submitted 11 February, 2016;
originally announced February 2016.
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Resonant tunneling in a quantum oxide superlattice
Authors:
Woo Seok Choi,
Sang A. Lee,
Jeong Ho You,
Suyoun Lee,
Ho Nyung Lee
Abstract:
Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunnelling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. He…
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Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunnelling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunnelling behaviour with a clear negative differential resistance. The tunnelling occurred through an atomically thin, lanthanum δ-doped SrTiO3 layer, and the negative differential resistance was realized on top of the bipolar resistance switching typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10^5) between the high and low-resistance states. The unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.
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Submitted 24 June, 2015;
originally announced June 2015.
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Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films
Authors:
Woo Seok Choi,
Ho Nyung Lee
Abstract:
We investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivil…
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We investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition metal 3d states, based on a spectroscopic ellipsometry study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition metal oxides.
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Submitted 11 May, 2015;
originally announced May 2015.
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Polaron transport and thermoelectric behavior in La-doped SrTiO3 thin films with elemental vacancies
Authors:
Woo Seok Choi,
Hyang Keun Yoo,
Hiromichi Ohta
Abstract:
Electrodynamic properties of La-doped SrTiO3 thin films with controlled elemental vacancies have been investigated using optical spectroscopy and thermopower measurement. In particular, we observed a correlation between the polaron formation and thermoelectric properties of the transition metal oxide (TMO) thin films. With decreasing oxygen partial pressure during the film growth (P(O2)), a system…
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Electrodynamic properties of La-doped SrTiO3 thin films with controlled elemental vacancies have been investigated using optical spectroscopy and thermopower measurement. In particular, we observed a correlation between the polaron formation and thermoelectric properties of the transition metal oxide (TMO) thin films. With decreasing oxygen partial pressure during the film growth (P(O2)), a systematic lattice expansion was observed along with the increased elemental vacancy and carrier density, experimentally determined using optical spectroscopy. Moreover, we observed an absorption in the mid-infrared photon energy range, which is attributed to the polaron formation in the doped SrTiO3 system. Thermopower of the La-doped SrTiO3 thin films could be largely modulated from -120 to -260 μV K-1, reflecting an enhanced polaronic mass of ~3 < mpolron/m < ~4. The elemental vacancies generated in the TMO films grown at various P(O2) influences the global polaronic transport, which governs the charge transport behavior, including the thermoelectric properties.
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Submitted 11 May, 2015;
originally announced May 2015.
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Surface properties of atomically flat poly-crystalline SrTiO3
Authors:
Sungmin Woo,
Hoidong Jeong,
Sang A Lee,
Hosung Seo,
Morgane Lacotte,
Adrian David,
Hyun You Kim,
Wilfrid Prellier,
Yunseok Kim,
Woo Seok Choi
Abstract:
Comparison between single- and the poly-crystalline structures provides essential information on the role of long-range translational symmetry and grain boundaries. In particular, by comparing single- and poly-crystalline transition metal oxides (TMOs), one can study intriguing physical phenomena such as electronic and ionic conduction at the grain boundaries, phonon propagation, and various domai…
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Comparison between single- and the poly-crystalline structures provides essential information on the role of long-range translational symmetry and grain boundaries. In particular, by comparing single- and poly-crystalline transition metal oxides (TMOs), one can study intriguing physical phenomena such as electronic and ionic conduction at the grain boundaries, phonon propagation, and various domain properties. In order to make an accurate comparison, however, both single- and poly-crystalline samples should have the same quality, e.g., stoichiometry, crystallinity, thickness, etc. Here, by studying the surface properties of atomically flat poly-crystalline SrTiO3 (STO), we propose an approach to simultaneously fabricate both single- and poly-crystalline epitaxial TMO thin films on STO substrates. In order to grow TMOs epitaxially with atomic precision, an atomically flat, single-terminated surface of the substrate is a prerequisite. We first examined (100), (110), and (111) oriented single-crystalline STO surfaces, which required different annealing conditions to achieve atomically flat surfaces, depending on the surface energy. A poly-crystalline STO surface was then prepared at the optimum condition for which all the domains with different crystallographic orientations could be successfully flattened. Based on our atomically flat poly-crystalline STO substrates, we envision expansion of the studies regarding theTMOdomains and grain boundaries.
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Submitted 10 March, 2015; v1 submitted 9 March, 2015;
originally announced March 2015.
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Dimensionality Control of d-orbital Occupation in Oxide Superlattices
Authors:
Da Woon Jeong,
Woo Seok Choi,
Satoshi Okamoto,
Jae-Young Kim,
Kyung Wan Kim,
Soon Jae Moon,
Deok-Yong Cho,
Ho Nyung Lee,
Tae Won Noh
Abstract:
Manipulating the orbital state in a strongly correlated electron system is of fundamental and technological importance for exploring and developing novel electronic phases. Here, we report an unambiguous demonstration of orbital occupancy control between t2g and eg multiplets in quasi-twodimensional transition metal oxide superlattices (SLs) composed of a Mott insulator LaCoO3 and a band insulator…
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Manipulating the orbital state in a strongly correlated electron system is of fundamental and technological importance for exploring and developing novel electronic phases. Here, we report an unambiguous demonstration of orbital occupancy control between t2g and eg multiplets in quasi-twodimensional transition metal oxide superlattices (SLs) composed of a Mott insulator LaCoO3 and a band insulator LaAlO3. As the LaCoO3 sublayer thickness approaches its fundamental limit (i.e. one unit-cell-thick), the electronic state of the SLs changed from a Mott insulator, in which both t2g and eg orbitals are partially filled, to a band insulator by completely filling (emptying) the t2g (eg) orbitals. We found the reduction of dimensionality has a profound effect on the electronic structure evolution, which is, whereas, insensitive to the epitaxial strain. The remarkable orbital controllability shown here offers a promising pathway for novel applications such as catalysis and photovoltaics, where the energy of d level is an essential parameter.
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Submitted 22 December, 2014;
originally announced December 2014.
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Thermopower enhancement by fractional layer control in 2D oxide superlattices
Authors:
Woo Seok Choi,
Hiromichi Ohta,
Ho Nyung Lee
Abstract:
We have investigated two-dimensional thermoelectric properties in transition metal oxide heterostructures. In particular, we adopted an unprecedented approach to direct tuning of the 2D carrier density using fractionally δ-doped oxide superlattices. By artificially controlling the carrier density in the 2D electron gas that emerges at a LaxSr1-xTiO3 δ-doped layer, we demonstrate that a thermopower…
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We have investigated two-dimensional thermoelectric properties in transition metal oxide heterostructures. In particular, we adopted an unprecedented approach to direct tuning of the 2D carrier density using fractionally δ-doped oxide superlattices. By artificially controlling the carrier density in the 2D electron gas that emerges at a LaxSr1-xTiO3 δ-doped layer, we demonstrate that a thermopower as large as 408 μV K-1 can be reached. This approach also yielded a power factor of the 2D carriers 117 μWcm-1K-2, which is one of the largest reported values from transition metal oxide based materials. The promising result can be attributed to the anisotropic band structure in the 2D system, indicating that δ-doped oxide superlattices can be a good candidate for advanced thermoelectrics.
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Submitted 2 August, 2014;
originally announced August 2014.