Showing 1–5 of 5 results for author: Chen, B J

Magnetic Properties and Electronic Configurations of Mn Ions in the Diluted Magnetic Semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ Studied by X-ray Magnetic Circular Dichroism and Resonant Inelastic X-ray Scattering

Authors: H. Suzuki, G. Q. Zhao, J. Okamoto, S. Sakamoto, Z. -Y. Chen, Y. Nonaka, G. Shibata, K. Zhao, B. J. Chen, W. -B. Wu, F. -H. Chang, H. -J. Lin, C. -T. Chen, A. Tanaka, M. Kobayashi, Bo Gu, S. Maekawa, Y. J. Uemura, C. Q. Jin, D. J. Huang, A. Fujimori

Abstract: The magnetic properties and the electronic excitations of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ have been studied by x-ray magnetic circular dichroism (XMCD) and resonant inelastic x-ray scattering (RIXS) at the Mn $L_{2,3}$ edge. The sum rule analysis of the XMCD spectra yields the net spin moment of $0.45μ_{\text{B}}$/Mn and the small orbital… ▽ More The magnetic properties and the electronic excitations of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ have been studied by x-ray magnetic circular dichroism (XMCD) and resonant inelastic x-ray scattering (RIXS) at the Mn $L_{2,3}$ edge. The sum rule analysis of the XMCD spectra yields the net spin moment of $0.45μ_{\text{B}}$/Mn and the small orbital moment of $0.05μ_{\text{B}}$/Mn. This indicates that the Mn atoms are in the high-spin configurations of $d^{5}$, whereas the presence of competing ferromagnetic and antiferromagnetic interactions between the Mn ions reduces the net spin moment. RIXS spectra show broad peaks from 1 to 6 eV energy loss, which originate from the $d$-$d$ crystal field excitations of the Mn ions. Based on a comparison of the RIXS line shapes with those of Ga$_{1-x}$Mn$_{x}$As, we conclude that the ground state of Mn in Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ consists not only of the charge-transferred $3d^{5}\underline{L}$ electron configuration ($\underline{L}$: ligand hole) with weakly bound holes as in Ga$_{1-x}$Mn$_{x}$As, but also of the pure $3d^{5}$ configuration with free holes. △ Less

Submitted 31 January, 2022; originally announced January 2022.

Journal ref: J. Phys. Soc. Jpn. 91, 064710 (2022)

Fermi Surfaces and $p$-$d$ Hybridization in the Diluted Magnetic Semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

Authors: H. Suzuki, G. Q. Zhao, K. Zhao, B. J. Chen, M. Horio, K. Koshiishi, J. Xu, M. Kobayashi, M. Minohara, E. Sakai, K. Horiba, H. Kumigashira, Bo Gu, S. Maekawa, Y. J. Uemura, C. Q. Jin, A. Fujimori

Abstract: The electronic structure of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ ($x=0.30$, $y=0.15$) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). %High density of states of nondispersive bands composed of the Zn $3d$ orbitals are observed with ultraviolet incident light. Measurements with soft x-rays clari… ▽ More The electronic structure of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ ($x=0.30$, $y=0.15$) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). %High density of states of nondispersive bands composed of the Zn $3d$ orbitals are observed with ultraviolet incident light. Measurements with soft x-rays clarify the host valence-band electronic structure primarily composed of the As $4p$ states. Two hole pockets around the $Γ$ point, a hole corrugated cylinder surrounding the $Γ$ and Z points, and an electron pocket around the Z point are observed, and explain the metallic transport of Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$. This is contrasted with Ga$_{1-x}$Mn$_{x}$As (GaMnAs), where it is located above the As $4p$ valence-band maximum (VBM) and no Fermi surfaces have been clearly identified. Resonance soft x-ray ARPES measurements reveal a nondispersive (Kondo resonance-like) Mn $3d$ impurity band near the Fermi level, as in the case of GaMnAs. However, the impurity band is located well below the VBM, unlike the impurity band in GaMnAs, which is located around and above the VBM. We conclude that, while the strong hybridization between the Mn $3d$ and the As $4p$ orbitals plays an important role in creating the impurity band and inducing high temperature ferromagnetism in both systems, the metallic transport may predominantly occur in the host valence band in Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ and in the impurity band in GaMnAs. △ Less

Submitted 19 September, 2015; v1 submitted 15 September, 2015; originally announced September 2015.

Journal ref: Phys. Rev. B 92, 235120 (2015)

(Sr,Na)(Zn,Mn)2As2: A new diluted ferromagnetic semiconductor with the hexagonal CaAl2Si2 type structure

Authors: B. J. Chen, K. Zhao, Z. Deng, W. Han, J. L. Zhu, X. C. Wang, Q. Q. Liu, B. Frandsen, L. Liu, S. Cheung, F. L. Ning, T. J. S. Munsie, T. Medina, G. M. Luke, J. P. Carl, J. Munevar, Y. J. Uemura, C. Q. Jin

Abstract: A new diluted ferromagnetic semiconductor (Sr,Na)(Zn,Mn)2As2 is reported, in which charge and spin doping are decoupled via Sr/Na and Zn/Mn substitutions, respectively, being distinguished from classic (Ga,Mn)As where charge & spin doping are simultaneously integrated. Different from the recently reported ferromagnetic (Ba,K)(Zn,Mn)2As2, this material crystallizes into the hexagonal CaAl2Si2-type… ▽ More A new diluted ferromagnetic semiconductor (Sr,Na)(Zn,Mn)2As2 is reported, in which charge and spin doping are decoupled via Sr/Na and Zn/Mn substitutions, respectively, being distinguished from classic (Ga,Mn)As where charge & spin doping are simultaneously integrated. Different from the recently reported ferromagnetic (Ba,K)(Zn,Mn)2As2, this material crystallizes into the hexagonal CaAl2Si2-type structure. Ferromagnetism with a Curie temperature up to 20 K has been observed from magnetization. The muon spin relaxation measurements suggest that the exchange interaction between Mn moments of this new system could be different to the earlier DMS systems. This system provides an important means for studying ferromagnetism in diluted magnetic semiconductors. △ Less

Submitted 17 November, 2014; originally announced November 2014.

Comments: 18 Pages 4 Figures

Journal ref: Phys. Rev. B 90, 155202(2014)

(Ca,Na)(Zn,Mn)2As2: a new spin & charge doping decoupled diluted ferromagnetic semiconductor with hexagonal CaAl2Si2 structure

Authors: K. Zhao, B. J. Chen, Z. Deng, W. Han, G. Q. Zhao, J. L. Zhu, Q. Q. Liu, X. C. Wang, B. Frandsen, L. Liu, S. Cheung, F. L. Ning, T. J. S. Munsie, T. Medina, G. M. Luke, J. P. Carlo, J. Munevar, G. M. Zhang, Y. J. Uemura, C. Q. Jin

Abstract: Here we report the successful synthesis of a spin- & charge-decoupled diluted magnetic semiconductor (Ca,Na)(Zn,Mn)2As2, crystallizing into the hexagonal CaAl2Si2 structure. The compound shows a ferromagnetic transition with a Curie temperature up to 33 K with 10% Na doping, which gives rise to carrier density of np~10^20 cm^-3. The new DMS is a soft magnetic material with HC<400 Oe. The anomalous… ▽ More Here we report the successful synthesis of a spin- & charge-decoupled diluted magnetic semiconductor (Ca,Na)(Zn,Mn)2As2, crystallizing into the hexagonal CaAl2Si2 structure. The compound shows a ferromagnetic transition with a Curie temperature up to 33 K with 10% Na doping, which gives rise to carrier density of np~10^20 cm^-3. The new DMS is a soft magnetic material with HC<400 Oe. The anomalous Hall effect is observed below the ferromagnetic ordering temperature. With increasing Mn doping, ferromagnetic order is accompanied by an interaction between the local spin and mobile charge, giving rise to a minimum in resistivity at low temperatures and localizing the conduction electrons. The system provides an ideal platform for studying the interaction of the local spins and conduction electrons. △ Less

Submitted 29 October, 2014; originally announced October 2014.

Comments: 23 Pages 1 Table 4 Figures

Journal ref: J Appl Phys.116,163906(2014)

Photoemission and X-ray Absorption Studies of the Diluted Magnetic Semiconductor Ba$_{1-y}$K$_{y}$(Zn$_{1-x}$Mn$_{x}$)$_{2}$As$_{2}$ Isostructural to Fe-based Superconductors

Authors: H. Suzuki, K. Zhao, G. Shibata, Y. Takahashi, S. Sakamoto, K. Yoshimatsu, B. J. Chen, H. Kumigashira, F. -H. Chang, H. -J. Lin, D. J. Huang, C. T. Chen, Bo Gu, S. Maekawa, Y. J. Uemura, C. Q. Jin, A. Fujimori

Abstract: The electronic and magnetic properties of a new diluted magnetic semiconductor (DMS) Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$, which is isostructural to so-called 122-type Fe-based superconductors, are investigated by x-ray absorption spectroscopy (XAS) and resonance photoemission spectroscopy (RPES). Mn $L_{2,3}$-edge XAS indicates that the doped Mn atoms have the valence 2+ and strong… ▽ More The electronic and magnetic properties of a new diluted magnetic semiconductor (DMS) Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$, which is isostructural to so-called 122-type Fe-based superconductors, are investigated by x-ray absorption spectroscopy (XAS) and resonance photoemission spectroscopy (RPES). Mn $L_{2,3}$-edge XAS indicates that the doped Mn atoms have the valence 2+ and strongly hybridize with the $4p$ orbitals of the tetrahedrally coordinating As ligands. The Mn $3d$ partial density of states (PDOS) obtained by RPES shows a peak around 4 eV and relatively high between 0-2 eV below the Fermi level ($E_{F}$) with little contribution at $E_{F}$, similar to that of the archetypal DMS Ga$_{1-x}$Mn$_{x}$As. This energy level creates $d^{5}$ electron configuration with $S=5/2$ local magnetic moments at the Mn atoms. Hole carriers induced by K substitution for Ba atoms go into the top of the As $4p$ valence band and are weakly bound to the Mn local spins. The ferromagnetic correlation between the local spins mediated by the hole carriers induces ferromagnetism in Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ △ Less

Submitted 26 January, 2015; v1 submitted 9 October, 2014; originally announced October 2014.

Journal ref: Physical Review B 91, 140401(R) (2015)