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Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities
Authors:
Abhiroop Chellu,
Subhajit Bej,
Hanna Wahl,
Hermann Kahle,
Topi Uusitalo,
Roosa Hytönen,
Heikki Rekola,
Jouko Lang,
Eva Schöll,
Lukas Hanschke,
Patricia Kallert,
Tobias Kipp,
Christian Strelow,
Marjukka Tuominen,
Klaus D. Jöns,
Petri Karvinen,
Tapio Niemi,
Mircea Guina,
Teemu Hakkarainen
Abstract:
On-chip emitters that generate single and entangled photons are essential for photonic quantum information processing technologies. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the Purcell effect to demonstrate up to a 38-fold enhancement in the…
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On-chip emitters that generate single and entangled photons are essential for photonic quantum information processing technologies. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the Purcell effect to demonstrate up to a 38-fold enhancement in the emission rate of InAs QDs by coupling them to metal-clad GaAs nanopillars. These cavities, featuring a sub-wavelength mode volume of 4.5x10-4 (λ/n)3 and quality factor of 62, enable Purcell-enhanced single-photon emission across a large bandwidth of 15 nm with a multi-photon emission probability as low as 0.5 %. The broadband nature of the cavity eliminates the need for implementing tuning mechanisms typically required to achieve QD-cavity resonance, thus relaxing fabrication constraints. Ultimately, this QD-cavity architecture represents a significant stride towards developing solid-state quantum emitters generating near-ideal single-photon states at GHz-level repetition rates.
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Submitted 13 August, 2024; v1 submitted 16 July, 2024;
originally announced July 2024.
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Telecom wavelength single-photon source based on InGaSb/AlGaSb quantum dot technology
Authors:
Teemu Hakkarainen,
Joonas Hilska,
Arttu Hietalahti,
Sanna Ranta,
Markus Peil,
Emmi Kantola,
Abhiroop Chellu,
Efsane Sen,
Jussi-Pekka Penttinen,
Mircea Guina
Abstract:
Deterministic light sources capable of generating quantum states on-demand at wavelengths compatible with fiber optics and atmospheric transmission are essential for practical applications in quantum communication, photonic quantum computing, and quantum metrology. To this end, single-photon emission at 1500 nm is demonstrated from an InGaSb quantum dot (QD) grown by filling droplet-etched nanohol…
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Deterministic light sources capable of generating quantum states on-demand at wavelengths compatible with fiber optics and atmospheric transmission are essential for practical applications in quantum communication, photonic quantum computing, and quantum metrology. To this end, single-photon emission at 1500 nm is demonstrated from an InGaSb quantum dot (QD) grown by filling droplet-etched nanoholes for the first time. The QD was embedded in a device structure comprising an antimony-based high refractive index contrast back-reflector designed for cryogenic operation and a solid immersion lens for improved photon extraction. The longitudinal optical (LO) phonon assisted excitation of the QD ground state and quasi-resonant excitation of the QD excited state is realized with a novel compact wavelength-tunable power-stabilized semiconductor laser. These direct approaches to exciting a single QD unlock access to its excitonic fine structure. The neutral exciton-biexciton structure exhibits a negative binding energy of 1.4 meV (2.6 nm) and a fine structure splitting of 24.1+/-0.4 ueV. Furthermore, spectrally pure/isolated emission from a charged single exciton state with a single-photon purity of 95 % is achieved with LO phonon assisted two-color excitation. These results represent a major step forward for the use of the novel antimonide-based QD emitters as deterministic quantum light sources in complex quantum secure networks exploiting the wavelength compatibility with standard telecom fibers.
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Submitted 9 April, 2024;
originally announced April 2024.
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Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes
Authors:
Lucie Leguay,
Abhiroop Chellu,
Joonas Hilska,
Esperanza Luna,
Andrei Schliwa,
Mircea Guina,
Teemu Hakkarainen
Abstract:
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information processing and quantum communication. QDs emitting in the telecom wavelengths are especially important for ensuring compatibility with optical fiber systems requ…
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Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information processing and quantum communication. QDs emitting in the telecom wavelengths are especially important for ensuring compatibility with optical fiber systems required to implement quantum communication networks. To this end, GaSb QDs fabricated by filling local-droplet etched nanoholes are emerging as a viable approach, yet the electronic properties of such nanostructures have not been studied in detail. In this article, an insight into the electronic structure and carrier dynamics in GaSb/AlGaSb QDs is provided through a systematic experimental analysis of their temperature-dependent photoluminescence behavior. A steady-state rate equation model is used to reveal the relevant energy barriers for thermally activated carrier capture and escape processes. Furthermore, results of detailed theoretical simulations of quantum-confined energy states using the multi-band k.p model and the effective mass method are presented. The purpose of the simulations is to reveal the direct and indirect energy states, carrier wavefunctions, and allowed optical transitions for GaSb QDs with different physical dimensions.
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Submitted 29 August, 2023;
originally announced August 2023.
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Strain-free GaSb quantum dots as single-photon sources in the telecom S-band
Authors:
Johannes Michl,
Giora Peniakov,
Andreas Pfenning,
Joonas Hilska,
Abhiroop Chellu,
Andreas Bader,
Mircea Guina,
Sven Höfling,
Teemu Hakkarainen,
Tobias Huber-Loyola
Abstract:
Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high interest in recent years, with research mainly focusing on indium based QDs. However, there is not much data on the optical and spin properties of galliumantimonide (GaSb) QDs, despite it being a physically rich system with a…
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Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high interest in recent years, with research mainly focusing on indium based QDs. However, there is not much data on the optical and spin properties of galliumantimonide (GaSb) QDs, despite it being a physically rich system with an indirect to direct bandgap crossover in the telecom wavelength range. Here, we investigate the (quantum-) optical properties of GaSb quantum dots, which are fabricated by filling droplet-etched nanoholes in an aluminum-galliumantimonide (AlGaSb) matrix. We observe photoluminescence (PL) features from isolated and highly symmetric QDs that exhibit narrow linewidth in the telecom S-band and show an excitonic fine structure splitting of $ΔE=(12.0\pm0.5)μeV$. Moreover, we perform time-resolved measurements of the decay characteristics of an exciton and measure the second-order photon autocorrelation function of the charge complex to $g^{(2)}(0)=0.16\pm0.02$, revealing clear antibunching and thus proving the capability of this material platform to generate non-classical light.
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Submitted 7 May, 2023;
originally announced May 2023.
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Highly uniform GaSb quantum dots with indirect-direct bandgap crossover at telecom range
Authors:
Abhiroop Chellu,
Joonas Hilska,
Jussi-Pekka Penttinen,
Teemu Hakkarainen
Abstract:
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD densities required for non-classical single-QD light sources. The photoluminescence (PL) experiments reveal that the GaSb QDs have an indirect-direct bandgap c…
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We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD densities required for non-classical single-QD light sources. The photoluminescence (PL) experiments reveal that the GaSb QDs have an indirect-direct bandgap crossover at telecom wavelengths. This is due to the alignment of the Γ and L valleys in the conduction band as a result of quantum confinement controlled by dimensions of the nanostructure. We show that in the direct bandgap regime close to 1.5 um wavelength, the GaSb QDs have a type I band alignment and exhibit excitonic emission with narrow spectral lines and very low inhomogeneous broadening of PL emission owing to the high material quality and dimensional uniformity. These properties are extremely promising in terms of applications in infrared quantum optics and quantum photonic integration.
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Submitted 23 April, 2021; v1 submitted 23 February, 2021;
originally announced February 2021.
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Nanohole etching in AlGaSb with Ga droplets
Authors:
Joonas Hilska,
Abhiroop Chellu,
Teemu Hakkarainen
Abstract:
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270°C to 500°C, allowing a wide range of tunability of the nanohole density. By leveraging the low vapor pressure of Sb, we can obtain high degree of control over droplet formation and nanohole etching steps and reveal the physics of adatom diffusion in these processes. Furthermore, by combining the e…
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We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270°C to 500°C, allowing a wide range of tunability of the nanohole density. By leveraging the low vapor pressure of Sb, we can obtain high degree of control over droplet formation and nanohole etching steps and reveal the physics of adatom diffusion in these processes. Furthermore, by combining the experimental results and a geometric diffusion-based model, we can determine the temperature and Sb-flux-dependencies of the critical monolayer coverage of Sb atoms required for driving the droplet etching process to completion. These findings provide new insight into the droplet formation and etching process present in the droplet-mediated synthesis of semiconductor nanostructures and represent a significant step towards development of telecom-emitting quantum dots in the GaSb system.
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Submitted 23 March, 2021; v1 submitted 22 January, 2021;
originally announced January 2021.