Showing 1–30 of 30 results for author: Chekhovich, E A

Quantum non-demolition measurement of an electron spin qubit through its low-energy many-body spin environment

Authors: Harry E. Dyte, George Gillard, Santanu Manna, Saimon F. Covre da Silva, Armando Rastelli, Evgeny A. Chekhovich

Abstract: The measurement problem dates back to the dawn of quantum mechanics. Here, we measure a quantum dot electron spin qubit through off-resonant coupling with thousands of redundant nuclear spin ancillae. We show that the link from quantum to classical can be made without any "wavefunction collapse", in agreement with the Quantum Darwinism concept. Large ancilla redundancy allows for single-shot reado… ▽ More The measurement problem dates back to the dawn of quantum mechanics. Here, we measure a quantum dot electron spin qubit through off-resonant coupling with thousands of redundant nuclear spin ancillae. We show that the link from quantum to classical can be made without any "wavefunction collapse", in agreement with the Quantum Darwinism concept. Large ancilla redundancy allows for single-shot readout with high fidelity $\approx99.85\%$. Repeated measurements enable heralded initialization of the qubit and probing of the equilibrium electron spin dynamics. Quantum jumps are observed and attributed to burst-like fluctuations in a thermally populated phonon bath. △ Less

Submitted 1 July, 2023; originally announced July 2023.

Approaching a fully-polarized state of nuclear spins in a semiconductor quantum dot

Authors: Peter Millington-Hotze, Harry E. Dyte, Santanu Manna, Saimon F. Covre da Silva, Armando Rastelli, Evgeny A. Chekhovich

Abstract: Magnetic noise of atomic nuclear spins is a major problem for solid state spin qubits. Highly-polarized nuclei would not only overcome this obstacle, but also make nuclear spins a useful quantum information resource. However, achieving sufficiently high nuclear polarizations has remained an evasive goal. Here we implement a nuclear spin polarization protocol which combines strong optical pumping a… ▽ More Magnetic noise of atomic nuclear spins is a major problem for solid state spin qubits. Highly-polarized nuclei would not only overcome this obstacle, but also make nuclear spins a useful quantum information resource. However, achieving sufficiently high nuclear polarizations has remained an evasive goal. Here we implement a nuclear spin polarization protocol which combines strong optical pumping and fast electron tunneling. Polarizations well above 95% are generated in GaAs semiconductor quantum dots on a timescale of 1 minute. The technique is compatible with standard quantum dot device designs, where highly-polarized nuclear spins can simplify implementations of quantum bits and memories, as well as offer a testbed for studies of many-body quantum dynamics and magnetism. △ Less

Submitted 10 February, 2023; originally announced February 2023.

Journal ref: Nature Communications 15, 985 (2024)

Nuclear spin diffusion in the central spin system of a GaAs/AlGaAs quantum dot

Authors: Peter Millington-Hotze, Santanu Manna, Saimon F. Covre da Silva, Armando Rastelli, Evgeny A. Chekhovich

Abstract: The spin diffusion concept provides a classical description of a purely quantum-mechanical evolution in inhomogeneously polarized many-body systems such as nuclear spin lattices. The central spin of a localized electron alters nuclear spin diffusion in a way that is still poorly understood. In contrast to previous predictions, we show experimentally that in GaAs/AlGaAs quantum dots the electron sp… ▽ More The spin diffusion concept provides a classical description of a purely quantum-mechanical evolution in inhomogeneously polarized many-body systems such as nuclear spin lattices. The central spin of a localized electron alters nuclear spin diffusion in a way that is still poorly understood. In contrast to previous predictions, we show experimentally that in GaAs/AlGaAs quantum dots the electron spin accelerates nuclear spin diffusion, without forming any Knight field gradient barrier. Such acceleration is present even at high magnetic fields, which we explain as a result of electron spin-flip fluctuations. Diffusion-limited nuclear spin lifetimes range between 1 and 10 s, providing plenty of room for recent proposals seeking to store and process quantum information using quantum dot nuclear spins. △ Less

Submitted 3 August, 2022; originally announced August 2022.

Ideal refocusing of an optically active spin qubit under strong hyperfine interactions

Authors: Leon Zaporski, Noah Shofer, Jonathan H. Bodey, Santanu Manna, George Gillard, Daniel M. Jackson, Martin Hayhurst Appel, Christian Schimpf, Saimon Covre da Silva, John Jarman, Geoffroy Delamare, Gunhee Park, Urs Haeusler, Evgeny A. Chekhovich, Armando Rastelli, Dorian A. Gangloff, Mete Atatüre, Claire Le Gall

Abstract: Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and networks, as well as quantum computing. Optically active semiconductor quantum dots have unparalleled photonic properties, but also modest spin coherence limited by their resident nuclei. Here, we demonstrate that eliminating strain inhomogeneity using lattice-matche… ▽ More Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and networks, as well as quantum computing. Optically active semiconductor quantum dots have unparalleled photonic properties, but also modest spin coherence limited by their resident nuclei. Here, we demonstrate that eliminating strain inhomogeneity using lattice-matched GaAs-AlGaAs quantum dot devices prolongs the electron spin coherence by nearly two orders of magnitude, beyond 0.113(3) ms. To do this, we leverage the 99.30(5)% fidelity of our optical pi-pulse gates to implement dynamical decoupling. We vary the number of decoupling pulses up to N = 81 and find a coherence time scaling of N^{0.75(2)}. This scaling manifests an ideal refocusing of strong interactions between the electron and the nuclear-spin ensemble, holding the promise of lifetime-limited spin coherence. Our findings demonstrate that the most punishing material science challenge for such quantum-dot devices has a remedy, and constitute the basis for highly coherent spin-photon interfaces. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Direct measurement of hyperfine shifts and radiofrequency manipulation of the nuclear spins in individual CdTe/ZnTe quantum dots

Authors: G. Ragunathan, J. Kobak, G. Gillard, W. Pacuski, K. Sobczak, J. Borysiuk, M. S. Skolnick, E. A. Chekhovich

Abstract: We achieve direct detection of electron hyperfine shifts in individual CdTe/ZnTe quantum dots. For the previously inaccessible regime of strong magnetic fields $B_z\gtrsim0.1$ T, we demonstrate robust polarization of a few-hundred-particle nuclear spin bath, with optical initialization time of $\sim$ 1 ms and polarization lifetime exceeding $\sim$ 1 s. Nuclear magnetic resonance spectroscopy of in… ▽ More We achieve direct detection of electron hyperfine shifts in individual CdTe/ZnTe quantum dots. For the previously inaccessible regime of strong magnetic fields $B_z\gtrsim0.1$ T, we demonstrate robust polarization of a few-hundred-particle nuclear spin bath, with optical initialization time of $\sim$ 1 ms and polarization lifetime exceeding $\sim$ 1 s. Nuclear magnetic resonance spectroscopy of individual dots reveals strong electron-nuclear interactions characterized by the Knight fields $|B_e|\gtrsim50$ mT, an order of magnitude stronger than in III-V semiconductor quantum dots. Our studies confirm II-VI semiconductor quantum dots as a promising platform for hybrid electron-nuclear spin quantum registers, combining the excellent optical properties comparable to III-V dots, and the dilute nuclear spin environment similar to group-IV semiconductors. △ Less

Submitted 19 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. Lett. 122, 096801 (2019)

Cross-calibration of GaAs deformation potentials and gradient-elastic tensors using photoluminescence and nuclear magnetic resonance spectroscopy in GaAs/AlGaAs quantum dot structures

Authors: E. A. Chekhovich, I. M. Griffiths, M. S. Skolnick, H. Huang, S. F. Covre da Silva, X. Yuan, A. Rastelli

Abstract: Lattice matched GaAs/AlGaAs epitaxial structures with quantum dots are studied under static uniaxial stress applied either along the $[001]$ or $[110]$ crystal directions. We conduct simultaneous measurements of the spectral shifts in the photoluminescence of the bulk GaAs substrate, which relate to strain via deformation potentials $a$ and $b$, and the quadrupolar shifts in the optically detected… ▽ More Lattice matched GaAs/AlGaAs epitaxial structures with quantum dots are studied under static uniaxial stress applied either along the $[001]$ or $[110]$ crystal directions. We conduct simultaneous measurements of the spectral shifts in the photoluminescence of the bulk GaAs substrate, which relate to strain via deformation potentials $a$ and $b$, and the quadrupolar shifts in the optically detected nuclear magnetic resonance spectra of the quantum dots, which relate to the same strain via the gradient-elastic tensor $S_{ijkl}$. Measurements in two uniaxial stress configurations are used to derive the ratio $b/a=0.241\pm0.008$ in good agreement with previous studies on GaAs. Based on the previously estimated value of $a\approx-8.8$ eV we derive the product of the nuclear quadrupolar moment $Q$ and the $S$-tensor diagonal component in GaAs to be $QS_{11}\approx+0.76\times10^{-6}$ V for $^{75}$As and $QS_{11}\approx-0.37\times10^{-6}$ V for $^{69}$Ga nuclei. In our experiments the signs of $S_{11}$ are directly measurable, which was not possible in the earlier nuclear acoustic resonance studies. Our $QS_{11}$ values are a factor of $\sim$1.4 smaller than those derived from the nuclear acoustic resonance experiments [Phys. Rev. B 10, 4244 (1974)]. The gradient-elastic tensor values measured in this work can be applied in structural analysis of strained III-V semiconductor nanostructures via accurate modelling of their magnetic resonance spectra. △ Less

Submitted 1 May, 2018; v1 submitted 18 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. B 97, 235311 (2018)

Dynamical suppression of fluctuations in an interacting nuclear spin bath of a self-assembled quantum dot using multiple pulse nuclear magnetic resonance

Authors: A. M. Waeber, M. Hopkinson, M. S. Skolnick, E. A. Chekhovich

Abstract: Electron spin qubit coherence in quantum dots is ultimately limited by random nuclear spin bath fluctuations. Here we aim to eliminate this randomness by making spin bath evolution deterministic. We introduce spin bath control sequences, which systematically combine Hahn and solid echoes to suppress inhomogeneous broadening and nuclear-nuclear interactions. Experiments on self-assembled quantum do… ▽ More Electron spin qubit coherence in quantum dots is ultimately limited by random nuclear spin bath fluctuations. Here we aim to eliminate this randomness by making spin bath evolution deterministic. We introduce spin bath control sequences, which systematically combine Hahn and solid echoes to suppress inhomogeneous broadening and nuclear-nuclear interactions. Experiments on self-assembled quantum dots show a five-fold increase in nuclear spin coherence. Numerical simulations show that these sequences can be used to suppress decoherence via qubit-qubit interaction in point defect and dopant spin systems. △ Less

Submitted 20 November, 2017; originally announced November 2017.

Journal ref: Nature Communications 10, 3157 (2019)

MOVPE growth, transmission electron microscopy and magneto-optical spectroscopy of individual InAsP/GaInP quantum dots

Authors: O. Del Pozo-Zamudio, J. Puebla, A. B. Krysa, R. Toro, A. M. Sanchez, R. Beanland, A. I. Tartakovskii, M. S. Skolnick, E. A. Chekhovich

Abstract: We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nominal As molar fraction. Magneto-photoluminescence experiments reveal QD emission in a wide range from 1.3 to 1.8 eV confirming incorporation of As into quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. I… ▽ More We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nominal As molar fraction. Magneto-photoluminescence experiments reveal QD emission in a wide range from 1.3 to 1.8 eV confirming incorporation of As into quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. Inside the core, an As molar fraction up to x=0.12 is observed. The heavy hole g-factor is found to be strongly dependent on As molar fraction, while the electron g-factor is close to the InP values. This suggests type-II carrier confinement in the studied InAsP dots with holes (electrons) localized in the core (cap) region. Finally, dynamic nuclear polarization is observed which allows for further insight into structural properties using nuclear magnetic resonance. △ Less

Submitted 5 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Materials 1, 034605 (2017)

Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots

Authors: E. A. Chekhovich, A. Ulhaq, E. Zallo, F. Ding, O. G. Schmidt, M. S. Skolnick

Abstract: Deep cooling of electron and nuclear spins is equivalent to achieving polarization degrees close to 100% and is a key requirement in solid state quantum information technologies. While polarization of individual nuclear spins in diamond and SiC reaches 99% and beyond, it has been limited to 60-65% for the nuclei in quantum dots. Theoretical models have attributed this limit to formation of coheren… ▽ More Deep cooling of electron and nuclear spins is equivalent to achieving polarization degrees close to 100% and is a key requirement in solid state quantum information technologies. While polarization of individual nuclear spins in diamond and SiC reaches 99% and beyond, it has been limited to 60-65% for the nuclei in quantum dots. Theoretical models have attributed this limit to formation of coherent "dark" nuclear spin states but experimental verification is lacking, especially due to the poor accuracy of polarization degree measurements. Here we measure the nuclear polarization in GaAs/AlGaAs quantum dots with high accuracy using a new approach enabled by manipulation of the nuclear spin states with radiofrequency pulses. Polarizations up to 80% are observed - the highest reported so far for optical cooling in quantum dots. This value is still not limited by nuclear coherence effects. Instead we find that optically cooled nuclei are well described within a classical spin temperature framework. Our findings unlock a route for further progress towards quantum dot electron spin qubits where deep cooling of the mesoscopic nuclear spin ensemble is used to achieve long qubit coherence. Moreover, GaAs hyperfine material constants are measured here experimentally for the first time. △ Less

Submitted 10 January, 2017; originally announced January 2017.

Journal ref: Nature Materials 16, 982-986 (2017)

Electron and nuclear spin properties of the nanohole-filled GaAs/AlGaAs quantum dots

Authors: Ata Ulhaq, Qingqing Duan, Fei Ding, Eugenio Zallo, Oliver G. Schmidt, Maurice S. Skolnick, Alexander I. Tartakovskii, Evgeny A. Chekhovich

Abstract: GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface. Here we study spin properties of such dots. We find nearly vanishing electron $g$-factor ($g_e<0.05$), providing a route for electrically driven spin control sche… ▽ More GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface. Here we study spin properties of such dots. We find nearly vanishing electron $g$-factor ($g_e<0.05$), providing a route for electrically driven spin control schemes. Optical manipulation of the nuclear spin environment is demonstrated with nuclear spin polarization up to $60\%$ achieved. NMR spectroscopy reveals the structure of two types of quantum dots and yields the small magnitude of residual strain $ε_b<0.02\%$ which nevertheless leads to long nuclear spin lifetimes exceeding 1000 s. The stability of the nuclear spin environment is advantageous for applications in quantum information processing. △ Less

Submitted 23 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. B 93, 165306 (2016)

Photoluminescence and Raman investigation of stability of InSe and GaSe thin films

Authors: O. Del Pozo-Zamudio, S. Schwarz, J. Klein, R. C. Schofield, E. A. Chekhovich, O. Ceylan, E. Margapoti, A. I. Dmitriev, G. V. Lashkarev, D. N. Borisenko, N. N. Kolesnikov, J. J. Finley, A. I. Tartakovskii

Abstract: Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when… ▽ More Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when they are exposed to air at room temperature. We find that in GaSe films, PL signal decreases on average below 50% over 24 (72) hours of exposure for films with thicknesses 10-25 (48-75) nm. In contrast, weak PL decrease of less than 20% is observed for InSe nm films after exposure of 100 hours. Similar trends are observed in Raman spectroscopy: within a week, the Raman signal decreases by a factor of 10 for a 24 nm thick GaSe, whereas no decrease was found for a 16 nm InSe film. We estimate that when exposed to air, the layers adjacent to the GaSe film surface degrade and become non-luminescent with a rate of 0.14$\pm$0.05 nm/hour. We show that the life-time of the GaSe films can be increased by up to two orders of magnitude (to several months) by encapsulation in dielectric materials such as SiO$_2$ or Si$_x$N$_y$. △ Less

Submitted 18 June, 2015; originally announced June 2015.

Few-second-long correlation times in a quantum dot nuclear spin bath probed by frequency-comb NMR spectroscopy

Authors: A. M. Waeber, M. Hopkinson, I. Farrer, D. A. Ritchie, J. Nilsson, R. M. Stevenson, A. J. Bennett, A. J. Shields, G. Burkard, A. I. Tartakovskii, M. S. Skolnick, E. A. Chekhovich

Abstract: One of the key challenges in spectroscopy is inhomogeneous broadening that masks the homogeneous spectral lineshape and the underlying coherent dynamics. A variety of techniques including four-wave mixing and spectral hole-burning are used in optical spectroscopy while in nuclear magnetic resonance (NMR) spin-echo is the most common way to counteract inhomogeneity. However, the high-power pulses u… ▽ More One of the key challenges in spectroscopy is inhomogeneous broadening that masks the homogeneous spectral lineshape and the underlying coherent dynamics. A variety of techniques including four-wave mixing and spectral hole-burning are used in optical spectroscopy while in nuclear magnetic resonance (NMR) spin-echo is the most common way to counteract inhomogeneity. However, the high-power pulses used in spin-echo and other sequences often create spurious dynamics obscuring the subtle spin correlations that play a crucial role in quantum information applications. Here we develop NMR techniques that allow the correlation times of the fluctuations in a nuclear spin bath of individual quantum dots to be probed. This is achieved with the use of frequency comb excitation which allows the homogeneous NMR lineshapes to be measured avoiding high-power pulses. We find nuclear spin correlation times exceeding 1 s in self-assembled InGaAs quantum dots - four orders of magnitude longer than in strain-free III-V semiconductors. The observed freezing of the nuclear spin fluctuations opens the way for the design of quantum dot spin qubits with a well-understood, highly stable nuclear spin bath. △ Less

Submitted 14 June, 2015; originally announced June 2015.

Optical properties of two-dimensional gallium chalcogenide films

Authors: O. Del Pozo-Zamudio, S. Schwarz, M. Sich, I. A. Akimov, M. Bayer, R. C. Schofield, E. A. Chekhovich, B. J. Robinson, N. D. Kay, O. V. Kolosov, A. I. Dmitriev, G. V. Lashkarev, D. N. Borisenko, N. N. Kolesnikov, A. I. Tartakovskii

Abstract: Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we p… ▽ More Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states. △ Less

Submitted 17 March, 2015; v1 submitted 9 January, 2015; originally announced January 2015.

Journal ref: 2D Materials, 2 (3), 035010 (2015)

Two-dimensional metal-chalcogenide films in tunable optical microcavities

Authors: S. Schwarz, S. Dufferwiel, P. M. Walker, F. Withers, A. A. P. Trichet, M. Sich, F. Li, E. A. Chekhovich, D. N. Borisenko, N. N. Kolesnikov, K. S. Novoselov, M. S. Skolnick, J. M Smith, D. N. Krizhanovskii, A. I. Tartakovskii

Abstract: Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here… ▽ More Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here we present tunable microcavities with embedded monolayer MoS2 or few monolayer GaSe films. We observe significant modification of spectral and temporal properties of photoluminescence (PL): PL is emitted in spectrally narrow and wavelength-tunable cavity modes with quality factors up to 7400; PL life-time shortening by a factor of 10 is achieved, a consequence of Purcell enhancement of the spontaneous emission rate. This work has potential to pave the way to microcavity-enhanced light-emitting devices based on layered 2D materials and their heterostructures, and also opens possibilities for cavity QED in a new material system of van der Waals crystals. △ Less

Submitted 15 August, 2014; originally announced August 2014.

Journal ref: Nano Lett., 14, 7003, 2014

Nuclear magnetic resonance inverse spectra of InGaAs quantum dots: Atomistic level structural information

Authors: Ceyhun Bulutay, E. A. Chekhovich, A. I. Tartakovskii

Abstract: A wealth of atomistic information is contained within a self-assembled quantum dot (QD), associated with its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins via the coupling between the strain within the polar lattice and the electric quadrupole moments of the nuclei. Here, we present a computational s… ▽ More A wealth of atomistic information is contained within a self-assembled quantum dot (QD), associated with its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins via the coupling between the strain within the polar lattice and the electric quadrupole moments of the nuclei. Here, we present a computational study of the recently introduced inverse spectra nuclear magnetic resonance technique to assess its suitability for extracting such structural information. We observe marked spectral differences between the compound InAs and alloy InGaAs QDs. These are linked to the local biaxial and shear strains, and the local bonding configurations. The cation-alloying plays a crucial role especially for the arsenic nuclei. The isotopic line profiles also largely differ among nuclear species: While the central transition of the gallium isotopes have a narrow linewidth, those of arsenic and indium are much broader and oppositely skewed with respect to each other. The statistical distributions of electric field gradient (EFG) parameters of the nuclei within the QD are analyzed. The consequences of various EFG axial orientation characteristics are discussed. Finally, the possibility of suppressing the first-order quadrupolar shifts is demonstrated by simply tilting the sample with respect to the static magnetic field. △ Less

Submitted 20 November, 2014; v1 submitted 2 August, 2014; originally announced August 2014.

Comments: Published version, 17 pages, 18 figures

Journal ref: Phys. Rev. B 90, 205425 (2014)

Quadrupolar induced suppression of nuclear spin bath fluctuations in self-assembled quantum dots

Authors: E. A. Chekhovich, M. Hopkinson, M. S. Skolnick, A. I. Tartakovskii

Abstract: Decoherence in quantum logic gates (qubits) due to interaction with the surrounding environment is a major obstacle to the practical realization of quantum information technologies. For solid state electron-spin qubits the interaction with nuclear spins is the main problem. One particular, neradicable source of electron decoherence arises from decoherence of the nuclear spin bath, driven by nuclea… ▽ More Decoherence in quantum logic gates (qubits) due to interaction with the surrounding environment is a major obstacle to the practical realization of quantum information technologies. For solid state electron-spin qubits the interaction with nuclear spins is the main problem. One particular, neradicable source of electron decoherence arises from decoherence of the nuclear spin bath, driven by nuclear-nuclear dipolar interactions. Due to its many-body nature nuclear decoherence is difficult to predict, especially for an important class of strained nanostructures where nuclear quadrupolar effects have a significant but largely unknown impact. Here we report direct measurement of nuclear spin bath coherence in individual strained InGaAs/GaAs quantum dots: nuclear spin-echo coherence times in the range T2~1.2 - 4.5 ms are found. Based on these T2 values we demonstrate that quadrupolar interactions make nuclear fluctuations in strained quantum dots much slower compared to lattice matched GaAs/AlGaAs structures. Such fluctuation suppression is particularly strong for arsenic nuclei due to the effect of atomic disorder of gallium and indium alloying. Our findings demonstrate that quadrupolar effects can help to solve the long-standing challenge of designing a scalable hardware for quantum computation: III-V semiconductor spin-qubits can be engineered to have a noise-free nuclear spin bath (previously achievable only in nuclear spin-0 semiconductors, where qubit network interconnection and scaling is challenging). △ Less

Submitted 21 March, 2014; v1 submitted 6 March, 2014; originally announced March 2014.

Journal ref: Nature Communications 6, 6348 (2015)

Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under non-resonant ultra-low power optical excitation

Authors: J. Puebla, E. A. Chekhovich, M. Hopkinson, P. Senellart, A. Lemaitre, M. S. Skolnick, A. I. Tartakovskii

Abstract: We study experimentally the dependence of dynamic nuclear spin polarization on the power of non-resonant optical excitation in two types of individual neutral semiconductor quantum dots: InGaAs/GaAs and GaAs/AlGaAs. We show that the mechanism of nuclear spin pumping via second order recombination of optically forbidden (''dark'') exciton states recently reported in InP/GaInP quantum dots [Phys. Re… ▽ More We study experimentally the dependence of dynamic nuclear spin polarization on the power of non-resonant optical excitation in two types of individual neutral semiconductor quantum dots: InGaAs/GaAs and GaAs/AlGaAs. We show that the mechanism of nuclear spin pumping via second order recombination of optically forbidden (''dark'') exciton states recently reported in InP/GaInP quantum dots [Phys. Rev. B 83, 125318 (2011)] is relevant for material systems considered in this work. In the InGaAs/GaAs dots this nuclear spin polarization mechanism is particularly pronounced, resulting in Overhauser shifts up to ~80 micro-eV achieved at optical excitation power ~1000 times smaller than the power required to saturate ground state excitons. The Overhauser shifts observed at low-power optical pumping in the interface GaAs/AlGaAs dots are generally found to be smaller (up to ~40 micro-eV). Furthermore in GaAs/AlGaAs we observe dot-to-dot variation and even sign reversal of the Overhauser shift which is attributed to dark-bright exciton mixing originating from electron-hole exchange interaction in dots with reduced symmetry. Nuclear spin polarization degrees reported in this work under ultra-low power optical pumping are comparable to those achieved by techniques such as resonant optical pumping or above-gap pumping with high power circularly polarized light. Dynamic nuclear polarization via second-order recombination of ''dark'' excitons may become a useful tool in single quantum dot applications, where manipulation of the nuclear spin environment or electron spin is required. △ Less

Submitted 3 June, 2013; originally announced June 2013.

Comments: Submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 88, 045306 (2013)

Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

Authors: D. Sercombe, S. Schwarz, O. Del Pozo-Zamudio, F. Liu, B. J. Robinson, E. A. Chekhovich, I. I. Tartakovskii, O. Kolosov, A. I. Tartakovskii

Abstract: Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment… ▽ More Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional capping of MoS2 with SiO2 and SiN, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials. △ Less

Submitted 21 January, 2014; v1 submitted 26 April, 2013; originally announced April 2013.

Comments: latest version

Journal ref: Scientific Reports 3, 3489 (2013)

III-V quantum light source and cavity-QED on Silicon

Authors: Isaac J. Luxmoore, Romain Toro, Osvaldo Del Pozo-Zamudio, Nicholas A. Wasley, Evgeny A. Chekhovich, Ana M. Sanchez, Richard Beanland, A. Mark Fox, Maurice S. Skolnick, Huiyun Y. Liu, Alexander I. Tartakovskii

Abstract: Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica waveguide circuits have been used to demonstrate linear optical quantum computing. Scale-up requires miniaturisation of the waveguide circuit and multiple photon sour… ▽ More Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica waveguide circuits have been used to demonstrate linear optical quantum computing. Scale-up requires miniaturisation of the waveguide circuit and multiple photon sources. Silicon photonics, driven by the incentive of optical interconnects, is a highly promising platform for the passive components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. △ Less

Submitted 22 November, 2012; originally announced November 2012.

Journal ref: Scientific Reports 3, 1239 (2013)

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

Authors: O. D. D. Couto Jr, D. Sercombe, J. Puebla, L. Otubo, I. J. Luxmoore, M. Sich, T. J. Elliott, E. A. Chekhovich, L. R. Wilson, M. S. Skolnick, H. Y. Liu, A. I. Tartakovskii

Abstract: We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison… ▽ More We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench. △ Less

Submitted 23 June, 2012; v1 submitted 21 June, 2012; originally announced June 2012.

Journal ref: Nano Lett., 12, 5269 (2012)

High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures

Authors: E. A. Chekhovich, K. V. Kavokin, J. Puebla, A. B. Krysa, M. Hopkinson, A. D. Andreev, A. M. Sanchez, R. Beanland, M. S. Skolnick, A. I. Tartakovskii

Abstract: Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Successful development of these devices depends strongly on techniques allowing structural analysis on the nanometer scale. However, commonly used microscopy methods are destructive, leading to the loss of the important link… ▽ More Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Successful development of these devices depends strongly on techniques allowing structural analysis on the nanometer scale. However, commonly used microscopy methods are destructive, leading to the loss of the important link between the obtained structural information and the electronic and optical properties of the device. Alternative non-invasive techniques such as optically detected nuclear magnetic resonance (ODNMR) so far proved difficult in semiconductor nano-structures due to significant strain-induced quadrupole broadening of the NMR spectra. Here, we develop new high sensitivity techniques that move ODNMR to a new regime, allowing high resolution spectroscopy of as few as 100000 quadrupole nuclear spins. By applying these techniques to individual strained self-assembled quantum dots, we measure strain distribution and chemical composition in the volume occupied by the confined electron. Furthermore, strain-induced spectral broadening is found to lead to suppression of nuclear spin magnetization fluctuations thus extending spin coherence times. The new ODNMR methods have potential to be applied for non-invasive investigations of a wide range of materials beyond single nano-structures, as well as address the task of understanding and control of nuclear spins on the nanoscale, one of the central problems in quantum information processing. △ Less

Submitted 17 December, 2011; originally announced December 2011.

Journal ref: Nature Nanotechnology 7, 646 (2012)

Isotope sensitive measurement of the hole-nuclear spin interaction in quantum dots

Authors: E. A. Chekhovich, A. B. Krysa, M. Hopkinson, P. Senellart, A. Lemaitre, M. S. Skolnick, A. I. Tartakovskii

Abstract: Decoherence caused by nuclear field fluctuations is a fundamental obstacle to the realization of quantum information processing using single electron spins. Alternative proposals have been made to use spin qubits based on valence band holes having weaker hyperfine coupling. However, it was demonstrated recently both theoretically and experimentally that the hole hyperfine interaction is not neglig… ▽ More Decoherence caused by nuclear field fluctuations is a fundamental obstacle to the realization of quantum information processing using single electron spins. Alternative proposals have been made to use spin qubits based on valence band holes having weaker hyperfine coupling. However, it was demonstrated recently both theoretically and experimentally that the hole hyperfine interaction is not negligible, although a consistent picture of the mechanism controlling the magnitude of the hole-nuclear coupling is still lacking. Here we address this problem by performing isotope selective measurement of the valence band hyperfine coupling in InGaAs/GaAs, InP/GaInP and GaAs/AlGaAs quantum dots. Contrary to existing models we find that the hole hyperfine constant along the growth direction of the structure (normalized by the electron hyperfine constant) has opposite signs for different isotopes and ranges from -15% to +15%. We attribute such changes in hole hyperfine constants to the competing positive contributions of p-symmetry atomic orbitals and the negative contributions of d-orbitals. Furthermore, we find that the d-symmetry contribution leads to a new mechanism for hole-nuclear spin flips which may play an important role in hole spin decoherence. In addition the measured hyperfine constants enable a fundamentally new approach for verification of the computed Bloch wavefunctions in the vicinity of nuclei in semiconductor nanostructures. △ Less

Submitted 3 October, 2012; v1 submitted 4 September, 2011; originally announced September 2011.

Journal ref: Nature Physics 9, 74-78 (2013)

Charge control in InP/GaInP single quantum dots embedded in Schottky diodes

Authors: O. D. D. Couto Jr., J. Puebla, E. A. Chekhovich, I. J. Luxmoore, C. J. Elliott, N. Babazadeh, M. S. Skolnick, A. I. Tartakovskii, A. B. Krysa

Abstract: We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify th… ▽ More We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify the exciton multi-particle states and carry out a systematic study of the neutral exciton state dipole moment and polarizability. This analysis allows for the characterization of the exciton wavefunction properties at the single dot level for this type of quantum dots. Photocurrent measurements allow further characterization of exciton properties by electrical means, opening new possibilities for resonant excitation studies for such system. △ Less

Submitted 13 July, 2011; originally announced July 2011.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 84 125301 (2011)

Direct measurement of the hole-nuclear spin interaction in single quantum dots

Authors: E. A. Chekhovich, A. B. Krysa, M. S. Skolnick, A. I. Tartakovskii

Abstract: We use photoluminescence spectroscopy of ''bright'' and ''dark'' exciton states in single InP/GaInP quantum dots to measure hyperfine interaction of the valence band hole with nuclear spins polarized along the sample growth axis. The ratio of the hyperfine constants for the hole (C) and electron (A) is found to be C/A~-0.11. In InP dots the contribution of spin 1/2 phosphorus nuclei to the hole-nu… ▽ More We use photoluminescence spectroscopy of ''bright'' and ''dark'' exciton states in single InP/GaInP quantum dots to measure hyperfine interaction of the valence band hole with nuclear spins polarized along the sample growth axis. The ratio of the hyperfine constants for the hole (C) and electron (A) is found to be C/A~-0.11. In InP dots the contribution of spin 1/2 phosphorus nuclei to the hole-nuclear interaction is weak, which enables us to determine experimentally the value of C for spin 9/2 indium nuclei as C_In~-5 micro-eV. This high value of C is in good agreement with recent theoretical predictions and suggests that the hole-nuclear spin interaction has to be taken into account when considering spin qubits based on holes. △ Less

Submitted 26 August, 2010; originally announced August 2010.

Comments: to be submitted to Phys Rev Lett

Journal ref: Phys. Rev. Lett 106, 027402 (2010)

Alignment of nuclear spins in single quantum dots using unpolarized light

Authors: E. A. Chekhovich, A. B. Krysa, M. S. Skolnick, A. I. Tartakovskii

Abstract: We report optical pumping of neutral quantum dots leading to nuclear spin alignment with direction insensitive to polarization and wavelength of light. Measurements of photoluminescence of both "dark" and "bright" excitons in single dots reveal that nuclear spin pumping occurs via a virtual spin-flip transition between these states accompanied by photon emission. The sign of the nuclear spin polar… ▽ More We report optical pumping of neutral quantum dots leading to nuclear spin alignment with direction insensitive to polarization and wavelength of light. Measurements of photoluminescence of both "dark" and "bright" excitons in single dots reveal that nuclear spin pumping occurs via a virtual spin-flip transition between these states accompanied by photon emission. The sign of the nuclear spin polarization is determined by asymmetry in the exciton energy spectrum, rather than by the sign of the exciton spin polarization. △ Less

Submitted 13 August, 2010; v1 submitted 7 July, 2010; originally announced July 2010.

Journal ref: Phys. Rev. B 83, 125318 (2011)

Optically tunable nuclear magnetic resonance in a single quantum dot

Authors: M. N. Makhonin, E. A. Chekhovich, P. Senellart, A. Lemaitre, M. S. Skolnick, A. I. Tartakovskii

Abstract: We report optically detected nuclear magnetic resonance (ODNMR) measurements on small ensembles of nuclear spins in single GaAs quantum dots. Using ODNMR we make direct measurements of the inhomogeneous Knight field from a photo-excited electron which acts on the nuclei in the dot. The resulting shifts of the NMR peak can be optically controlled by varying the electron occupancy and its spin orien… ▽ More We report optically detected nuclear magnetic resonance (ODNMR) measurements on small ensembles of nuclear spins in single GaAs quantum dots. Using ODNMR we make direct measurements of the inhomogeneous Knight field from a photo-excited electron which acts on the nuclei in the dot. The resulting shifts of the NMR peak can be optically controlled by varying the electron occupancy and its spin orientation, and lead to strongly asymmetric lineshapes at high optical excitation. The all-optical control of the NMR lineshape will enable position-selective control of small groups of nuclear spins in a dot. Our calculations also show that the asymmetric NMR peak lineshapes can provide information on the volume of the electron wave-function, and may be used for measurements of non-uniform distributions of atoms in nano-structures. △ Less

Submitted 21 March, 2010; v1 submitted 2 February, 2010; originally announced February 2010.

Comments: submitted to PRL

Journal ref: Phys. Rev. B 82, 161309 (2010) - Published October 22, 2010

Pumping of nuclear spins by the optical solid effect in a quantum dot

Authors: E. A. Chekhovich, M. N. Makhonin, K. V. Kavokin, A. B. Krysa, M. S. Skolnick, A. I. Tartakovskii

Abstract: We demonstrate that efficient optical pumping of nuclear spins in semiconductor quantum dots (QDs) can be achieved by resonant pumping of optically "forbidden" transitions. This process corresponds to one-to-one conversion of a photon absorbed by the dot into a polarized nuclear spin, which also has potential for initialization of hole spin in QDs. Pumping via the "forbidden" transition is a man… ▽ More We demonstrate that efficient optical pumping of nuclear spins in semiconductor quantum dots (QDs) can be achieved by resonant pumping of optically "forbidden" transitions. This process corresponds to one-to-one conversion of a photon absorbed by the dot into a polarized nuclear spin, which also has potential for initialization of hole spin in QDs. Pumping via the "forbidden" transition is a manifestation of the "optical solid effect", an optical analogue of the effect previously observed in electron spin resonance experiments in the solid state. We find that by employing this effect, nuclear polarization of 65% can be achieved, the highest reported so far in optical orientation studies in QDs. The efficiency of the spin pumping exceeds that employing the allowed transition, which saturates due to the low probability of electron-nuclear spin flip-flop. △ Less

Submitted 1 October, 2009; v1 submitted 29 June, 2009; originally announced June 2009.

Comments: 5 pages, 3 figures, submitted to Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 104, 066804 (2010) - Published February 12, 2010

Polarization freezing of 10000 optically-cooled nuclear spins by coupling to a single electron

Authors: E. A. Chekhovich, M. N. Makhonin, J. Skiba-Szymanska, A. B. Krysa, V. D. Kulakovskii, V. I. Fal'ko, M. S. Skolnick, A. I. Tartakovskii

Abstract: The nature of the nano-scale environment presents a major challenge for solid-state implementation of spin-based qubits. In this work, a single electron spin in an optically pumped nanometer-sized III-V semiconductor quantum dot is used to control a macroscopic nuclear spin of several thousand nuclei, freezing its decay and leading to spin life-times exceeding 100 seconds at low temperatures. Fe… ▽ More The nature of the nano-scale environment presents a major challenge for solid-state implementation of spin-based qubits. In this work, a single electron spin in an optically pumped nanometer-sized III-V semiconductor quantum dot is used to control a macroscopic nuclear spin of several thousand nuclei, freezing its decay and leading to spin life-times exceeding 100 seconds at low temperatures. Few-millisecond-fast optical initialization of the nuclear spin is followed by a slow decay exhibiting random telegraph signals at long delay times, arising from low probability electron jumps out of the dot. The remarkably long spin life-time in a dot surrounded by a densely-packed nuclear spin environment arises from the Knight field created by the resident electron, which leads to suppression of nuclear spin depolarization. △ Less

Submitted 27 January, 2009; originally announced January 2009.

Comments: 13 pages, 3 figures, submitted to Nature Materials

Journal ref: Phys. Rev. B 81, 245308 (2010) - Published June 9, 2010

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe

Authors: A. E. Nikolaenko, E. A. Chekhovich, M. N. Makhonin, I. W. Drouzas, A. B. Vankov, J. Skiba-Szymanska, M. S. Skolnick, P. Senellart, A. Lemaitre, A. I. Tartakovskii

Abstract: Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied mag… ▽ More Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced. △ Less

Submitted 15 January, 2009; originally announced January 2009.

Comments: 5 pages, 3 figures, submitted to Phys Rev B

Journal ref: Phys. Rev. B 79, 081303 (2009) - Published February 27, 2009

Overhauser effect in individual InP/GaInP dots

Authors: J. Skiba-Szymanska, A. V. Nikolaenko, E. A. Chekhovich, A. I. Tartakovskii, M. N. Makhonin, I. Drouzas, M. S. Skolnick, A. B. Krysa

Abstract: Sizable nuclear spin polarization is pumped in individual InP/GaInP dots in a wide range of external magnetic fields B_ext=0-5T by circularly polarized optical excitation. We observe nuclear polarization of up to ~40% at Bext=1.5T and corresponding to an Overhauser field of ~1.2T. We find a strong feedback of the nuclear spin on the spin pumping efficiency. This feedback, produced by the Overhau… ▽ More Sizable nuclear spin polarization is pumped in individual InP/GaInP dots in a wide range of external magnetic fields B_ext=0-5T by circularly polarized optical excitation. We observe nuclear polarization of up to ~40% at Bext=1.5T and corresponding to an Overhauser field of ~1.2T. We find a strong feedback of the nuclear spin on the spin pumping efficiency. This feedback, produced by the Overhauser field, leads to nuclear spin bi-stability at low magnetic fields of Bext=0.5-1.5T. We find that the exciton Zeeman energy increases markedly, when the Overhauser field cancels the external field. This counter-intuitive result is shown to arise from the opposite contribution of the electron and hole Zeeman splittings to the total exciton Zeeman energy. △ Less

Submitted 14 March, 2008; v1 submitted 15 October, 2007; originally announced October 2007.

Journal ref: Phys. Rev. B 77, 165338 (2008) - Published April 29, 2008