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Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices
Authors:
Hao Zhang,
Michiel W. A. de Moor,
Jouri D. S. Bommer,
Di Xu,
Guanzhong Wang,
Nick van Loo,
Chun-Xiao Liu,
Sasa Gazibegovic,
John A. Logan,
Diana Car,
Roy L. M. Op het Veld,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Mihir Pendharkar,
Daniel J. Pennachio,
Borzoyeh Shojaei,
Joon Sue Lee,
Chris J. Palmstrøm,
Erik P. A. M. Bakkers,
S. Das Sarma,
Leo P. Kouwenhoven
Abstract:
We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order…
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We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.
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Submitted 27 January, 2021;
originally announced January 2021.
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Full parity phase diagram of a proximitized nanowire island
Authors:
J. Shen,
G. W. Winkler,
F. Borsoi,
S. Heedt,
V. Levajac,
J. Y. Wang,
D. van Driel,
D. Bouman,
S. Gazibegovic,
R. L. M. Op Het Veld,
D. Car,
J. A. Logan,
M. Pendharkar,
C. J. Palmstrom,
E. P. A. M. Bakkers,
L. P. Kouwenhoven,
B. van Heck
Abstract:
We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our nume…
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We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our numerical simulations indicate to be the most promising for locating Majorana zero modes, we observe correlated oscillations of peak spacings and heights. For positive gate voltages, the $2e$-$1e$ transition with low $B^*$ is due to the presence of non-topological states whose energy quickly disperses below the charging energy due to the orbital effect of the magnetic field. Our measurements demonstrate the importance of a careful exploration of the entire available phase space of a proximitized nanowire as a prerequisite to define future topological qubits.
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Submitted 3 August, 2021; v1 submitted 18 December, 2020;
originally announced December 2020.
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Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise
Authors:
Felix Jekat,
Benjamin Pestka,
Diana Car,
Saša Gazibegović,
Kilian Flöhr,
Sebastian Heedt,
Jürgen Schubert,
Marcus Liebmann,
Erik P. A. M. Bakkers,
Thomas Schäpers,
Markus Morgenstern
Abstract:
We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to…
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We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems.
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Submitted 22 June, 2020; v1 submitted 23 January, 2020;
originally announced January 2020.
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Spin transport in ferromagnet-InSb nanowire quantum devices
Authors:
Zedong Yang,
Brett Heischmidt,
Sasa Gazibegovic,
Ghada Badawy,
Diana Car,
Paul A. Crowell,
Erik P. A. M. Bakkers,
Vlad S. Pribiag
Abstract:
Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spi…
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Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. However, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards developing MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They also provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires.
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Submitted 16 September, 2019;
originally announced September 2019.
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Crossed Andreev Reflection in InSb Flake Josephson Junctions
Authors:
Folkert K. de Vries,
Martijn L. Sol,
Sasa Gazibegovic,
Roy L. M. op het Veld,
Stijn C. Balk,
Diana Car,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Jie Shen
Abstract:
We study superconducting quantum interference in InSb flake Josephson junctions. An even-odd effect in the amplitude and periodicity of the superconducting quantum interference pattern is found. Interestingly, the occurrence of this pattern coincides with enhanced conduction at both edges of the flake, as is deduced from measuring a SQUID pattern at reduced gate voltages. We identify the specific…
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We study superconducting quantum interference in InSb flake Josephson junctions. An even-odd effect in the amplitude and periodicity of the superconducting quantum interference pattern is found. Interestingly, the occurrence of this pattern coincides with enhanced conduction at both edges of the flake, as is deduced from measuring a SQUID pattern at reduced gate voltages. We identify the specific crystal facet of the edge with enhanced conduction, and confirm this by measuring multiple devices. Furthermore, we argue the even-odd effect is due to crossed Andreev reflection, a process where a Cooper pair splits up over the two edges and recombines at the opposite contact. An entirely $h/e$ periodic SQUID pattern, as well as the observation of both even-odd and odd-even effects, corroborates this conclusion. Crossed Andreev reflection could be harnessed for creating a topological state of matter or performing experiments on the non-local spin-entanglement of spatially separated Cooper pairs.
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Submitted 14 June, 2019; v1 submitted 13 June, 2019;
originally announced June 2019.
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Erasing odd-parity states in semiconductor quantum dots coupled to superconductors
Authors:
Z. Su,
R. Zitko,
P. Zhang,
H. Wu,
D. Car,
S. R. Plissard,
S. Gazibegovic,
G. H. A. Badawy,
M. Hocevar,
J. Chen,
E. P. A. M. Bakkers,
S. M. Frolov
Abstract:
Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-parity occupations become non-discernible (erased) both above and below the induced superconducting gap. Above the gap, conductance in the odd Coulomb valleys increases until the valleys are lifted. Below the gap, Andreev…
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Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-parity occupations become non-discernible (erased) both above and below the induced superconducting gap. Above the gap, conductance in the odd Coulomb valleys increases until the valleys are lifted. Below the gap, Andreev bound states undergo quantum phase transitions to singlet ground states at odd occupancy. We observe that the apparent erasure of odd-parity regimes coincides at low-bias and at high-bias. This observation is reproduced in numerical renormalization group simulations, and is explained qualitatively by a competition between Kondo temperature and the induced superconducting gap. In the erased odd-parity regime, the quantum dot exhibits transport features similar to a finite-size Majorana nanowire, drawing parallels between even-odd dot occupations and even-odd one-dimensional subband occupations.
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Submitted 10 April, 2019;
originally announced April 2019.
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Ubiquitous non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices
Authors:
Jun Chen,
Benjamin Woods,
Peng Yu,
Moira Hocevar,
Diana Car,
Sebastien Plissard,
Erik Bakkers,
Tudor Stanescu,
Sergey Frolov
Abstract:
We perform tunneling measurements on indium antimonide nanowire/superconductor hybrid devices fabricated for the studies of Majorana bound states. At finite magnetic field, resonances that strongly resemble Majorana bound states, including zero-bias pinning, become common to the point of ubiquity. Since Majorana bound states are predicted in only a limited parameter range in nanowire devices, we s…
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We perform tunneling measurements on indium antimonide nanowire/superconductor hybrid devices fabricated for the studies of Majorana bound states. At finite magnetic field, resonances that strongly resemble Majorana bound states, including zero-bias pinning, become common to the point of ubiquity. Since Majorana bound states are predicted in only a limited parameter range in nanowire devices, we seek an alternative explanation for the observed zero-bias peaks. With the help of a self-consistent Poission-Schrödinger multiband model developed in parallel, we identify several families of trivial subgap states which overlap and interact, giving rise to a crowded spectrum near zero energy and zero-bias conductance peaks in experiments. These findings advance the search for Majorana bound states through improved understanding of broader phenomena found in superconductor-semiconductor systems.
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Submitted 23 January, 2024; v1 submitted 7 February, 2019;
originally announced February 2019.
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Magnetic field resilient superconducting coplanar waveguide resonators for hybrid cQED experiments
Authors:
J. G. Kroll,
F. Borsoi,
K. L. van der Enden,
W. Uilhoorn,
D. de Jong,
M Quintero-Pérez,
D. J. van Woerkom,
A. Bruno,
S. R. Plissard,
D. Car,
E. P. A. M. Bakkers,
M. C. Cassidy,
L. P. Kouwenhoven
Abstract:
Superconducting coplanar waveguide resonators that can operate in strong magnetic fields are important tools for a variety of high frequency superconducting devices. Magnetic fields degrade resonator performance by creating Abrikosov vortices that cause resistive losses and frequency fluctuations, or suppressing superconductivity entirely. To mitigate these effects we investigate lithographically…
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Superconducting coplanar waveguide resonators that can operate in strong magnetic fields are important tools for a variety of high frequency superconducting devices. Magnetic fields degrade resonator performance by creating Abrikosov vortices that cause resistive losses and frequency fluctuations, or suppressing superconductivity entirely. To mitigate these effects we investigate lithographically defined artificial defects in resonators fabricated from NbTiN superconducting films. We show that by controlling the vortex dynamics the quality factor of resonators in perpendicular magnetic fields can be greatly enhanced. Coupled with the restriction of the device geometry to enhance the superconductors critical field, we demonstrate stable resonances that retain quality factors $\simeq 10^5$ at the single photon power level in perpendicular magnetic fields up to $B_\perp \simeq$ 20 mT and parallel magnetic fields up to $B_\parallel \simeq$ 6 T. We demonstrate the effectiveness of this technique for hybrid systems by integrating an InSb nanowire into a field resilient superconducting resonator, and use it to perform fast charge readout of a gate defined double quantum dot at $B_\parallel =$ 1 T.
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Submitted 11 September, 2018;
originally announced September 2018.
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Spin-Orbit Protection of Induced Superconductivity in Majorana Nanowires
Authors:
Jouri D. S. Bommer,
Hao Zhang,
Önder Gül,
Bas Nijholt,
Michael Wimmer,
Filipp N. Rybakov,
Julien Garaud,
Donjan Rodic,
Egor Babaev,
Matthias Troyer,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven
Abstract:
Spin-orbit interaction (SOI) plays a key role in creating Majorana zero modes in semiconductor nanowires proximity coupled to a superconductor. We track the evolution of the induced superconducting gap in InSb nanowires coupled to a NbTiN superconductor in a large range of magnetic field strengths and orientations. Based on realistic simulations of our devices, we reveal SOI with a strength of 0.1…
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Spin-orbit interaction (SOI) plays a key role in creating Majorana zero modes in semiconductor nanowires proximity coupled to a superconductor. We track the evolution of the induced superconducting gap in InSb nanowires coupled to a NbTiN superconductor in a large range of magnetic field strengths and orientations. Based on realistic simulations of our devices, we reveal SOI with a strength of 0.15-0.35 eV$\require{mediawiki-texvc}Å$. Our approach identifies the direction of the spin-orbit field, which is strongly affected by the superconductor geometry and electrostatic gates.
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Submitted 10 May, 2019; v1 submitted 5 July, 2018;
originally announced July 2018.
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Electric field tunable superconductor-semiconductor coupling in Majorana nanowires
Authors:
Michiel W. A. de Moor,
Jouri D. S. Bommer,
Di Xu,
Georg W. Winkler,
Andrey E. Antipov,
Arno Bargerbos,
Guanzhong Wang,
Nick van Loo,
Roy L. M. Op het Veld,
Sasa Gazibegovic,
Diana Car,
John A. Logan,
Mihir Pendharkar,
Joon Sue Lee,
Erik P. A. M. Bakkers,
Chris J. Palmstrøm,
Roman M. Lutchyn,
Leo P. Kouwenhoven,
Hao Zhang
Abstract:
We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and sp…
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We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and spin-orbit coupling, which all play a key role in understanding Majorana physics. We further show that level repulsion due to spin-orbit coupling in a finite size system can lead to seemingly stable zero bias conductance peaks, which mimic the behavior of Majorana zero modes. Our results improve the understanding of realistic Majorana nanowire systems.
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Submitted 4 June, 2018;
originally announced June 2018.
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Mirage Andreev spectra generated by mesoscopic leads in nanowire quantum dots
Authors:
Z. Su,
A. Zarassi,
J. -F. Hsu,
P. San-Jose,
E. Prada,
R. Aguado,
E. J. H. Lee,
S. Gazibegovic,
R. Op het Veld,
D. Car,
S. R. Plissard,
M. Hocevar,
M. Pendharkar,
J. S. Lee,
J. A. Logan,
C. J. Palmstrom,
E. P. A. M. Bakkers,
S. M. Frolov
Abstract:
We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded…
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We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded spectrum is created. To describe the observations a model is developed that combines the effects of a soft induced gap and of additional Andreev bound states both in the quantum dot and in the finite regions of the nanowire adjacent to the quantum dot. Understanding of Andreev spectroscopy is important for the correct interpretation of Majorana experiments done on the same structures.
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Submitted 11 May, 2018;
originally announced May 2018.
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Parity transitions in the superconducting ground state of hybrid InSb-Al Coulomb islands
Authors:
Jie Shen,
Sebastian Heedt,
Francesco Borsoi,
Bernard Van Heck,
Sasa Gazibegovic,
Roy L. M. Op het Veld,
Diana Car,
John A. Logan,
Mihir Pendharkar,
Senja J. J. Ramakers,
Guanzhong Wang,
Di Xu,
Daniel Bouman,
Attila Geresdi,
Chris J. Palmstrom,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
The number of electrons in small metallic or semiconducting islands is quantized. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we stu…
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The number of electrons in small metallic or semiconducting islands is quantized. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we study a hybrid superconducting-semiconducting island and find three typical GS evolutions in a parallel magnetic field: a robust 2e-periodic even-parity GS, a transition to a 2e-periodic odd-parity GS,and a transition from a 2e- to a 1e-periodic GS. The 2e-periodic odd-parity GS persistent in gate-voltage occurs when a spin-resolved subgap state crosses zero energy. For our 1e-periodic GSs we explicitly show the origin being a single zero-energy state gapped from the continuum, i.e. compatible with an Andreev bound states stabilized at zero energy or the presence of Majorana zero modes.
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Submitted 5 November, 2018; v1 submitted 9 April, 2018;
originally announced April 2018.
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Selective Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires
Authors:
S. T. Gill,
J. Damasco,
B. E. Janicek,
M. S. Durkin,
V. Humbert,
S. Gazibegovic,
D. Car,
E. P. A. M. Bakkers,
P. Y. Huang,
N. Mason
Abstract:
Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the supercon…
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Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting soft superconducting gap ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana based quantum computing applications, prepared using selective area epitaxy can achieve micron scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.
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Submitted 11 September, 2018; v1 submitted 20 March, 2018;
originally announced March 2018.
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Quantized Majorana conductance
Authors:
Hao Zhang,
Chun-Xiao Liu,
Sasa Gazibegovic,
Di Xu,
John A. Logan,
Guanzhong Wang,
Nick van Loo,
Jouri D. S. Bommer,
Michiel W. A. de Moor,
Diana Car,
Roy L. M. Op het Veld,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Mihir Pendharkar,
Daniel J. Pennachio,
Borzoyeh Shojaei,
Joon Sue Lee,
Chris J. Palmstrom,
Erik P. A. M. Bakkers,
S. Das Sarma,
Leo P. Kouwenhoven
Abstract:
Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this qua…
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Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this quantization is a direct consequence of the famous Majorana symmetry, 'particle equals antiparticle'. The Majorana symmetry protects the quantization against disorder, interactions, and variations in the tunnel coupling. Previous experiments, however, have shown ZBPs much smaller than 2e2/h, with a recent observation of a peak-height close to 2e2/h. Here, we report a quantized conductance plateau at 2e2/h in the zero-bias conductance measured in InSb semiconductor nanowires covered with an Al superconducting shell. Our ZBP-height remains constant despite changing parameters such as the magnetic field and tunnel coupling, i.e. a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins, by investigating its robustness on electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of non-Abelian Majorana zero-modes in the system, consequently paving the way for future braiding experiments.
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Submitted 29 October, 2017;
originally announced October 2017.
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Split-Channel Ballistic Transport in an InSb Nanowire
Authors:
J. C. Estrada Saldaña,
Y. M. Niquet,
J. P. Cleuziou,
E. J. H. Lee,
D. Car,
S. R. Plissard,
E. P. A. M. Bakkers,
S. De Franceschi
Abstract:
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of…
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We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of $e^2$/h, yet we find a quantized conductance pattern largely dependent on the configuration of voltages applied to the bottom gates. In particular, we can make the first plateau disappear leaving a first conductance step of 2$e^2/h$, which is indicative of a remarkable two-fold subband degeneracy that can persist up to several Tesla. For certain gate voltage settings, we also observe the presence of discrete resonant states producing conductance features that can resemble those expected from the opening of a helical gap in the subband structure. We explain our experimental findings through the formation of two spatially separated 1D conduction channels.
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Submitted 9 March, 2018; v1 submitted 8 September, 2017;
originally announced September 2017.
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Ballistic superconductivity in semiconductor nanowires
Authors:
Hao Zhang,
Önder Gül,
Sonia Conesa-Boj,
Michał P. Nowak,
Michael Wimmer,
Kun Zuo,
Vincent Mourik,
Folkert K. de Vries,
Jasper van Veen,
Michiel W. A. de Moor,
Jouri D. S. Bommer,
David J. van Woerkom,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Marina Quintero-Pérez,
Maja C. Cassidy,
Sebastian Koelling,
Srijit Goswami,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven
Abstract:
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brou…
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Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here, we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor which enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices.
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Submitted 10 July, 2017;
originally announced July 2017.
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Supercurrent interference in few-mode nanowire Josephson junctions
Authors:
Kun Zuo,
Vincent Mourik,
Daniel B. Szombati,
Bas Nijholt,
David J. van Woerkom,
Attila Geresdi,
Jun Chen,
Viacheslav P. Ostroukh,
Anton R. Akhmerov,
Sebastién R. Plissard,
Diana Car,
Erik P. A. M. Bakkers,
Dmitry I. Pikulin,
Leo P. Kouwenhoven,
Sergey M. Frolov
Abstract:
Junctions created by coupling two superconductors via a semiconductor nanowire in the presence of high magnetic fields are the basis for detection, fusion, and braiding of Majorana bound states. We study NbTiN/InSb nanowire/NbTiN Josephson junctions and find that their critical currents in the few mode regime are strongly suppressed by magnetic field. Furthermore, the dependence of the critical cu…
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Junctions created by coupling two superconductors via a semiconductor nanowire in the presence of high magnetic fields are the basis for detection, fusion, and braiding of Majorana bound states. We study NbTiN/InSb nanowire/NbTiN Josephson junctions and find that their critical currents in the few mode regime are strongly suppressed by magnetic field. Furthermore, the dependence of the critical current on magnetic field exhibits gate-tunable nodes. Based on a realistic numerical model we conclude that the Zeeman effect induced by the magnetic field and the spin-orbit interaction in the nanowire are insufficient to explain the observed evolution of the Josephson effect. We find the interference between the few occupied one-dimensional modes in the nanowire to be the dominant mechanism responsible for the critical current behavior. The suppression and non-monotonic evolution of critical currents at finite magnetic field should be taken into account when designing circuits based on Majorana bound states.
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Submitted 5 November, 2017; v1 submitted 11 June, 2017;
originally announced June 2017.
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Epitaxy of Advanced Nanowire Quantum Devices
Authors:
Sasa Gazibegovic,
Diana Car,
Hao Zhang,
Stijn C. Balk,
John A. Logan,
Michiel W. A. de Moor,
Maja C. Cassidy,
Rudi Schmits,
Di Xu,
Guanzhong Wang,
Peter Krogstrup,
Roy L. M. Op het Veld,
Jie Shen,
Daniël Bouman,
Borzoyeh Shojaei,
Daniel Pennachio,
Joon Sue Lee,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Leo P. Kouwenhoven,
Chris J. Palmstrøm,
Erik P. A. M. Bakkers
Abstract:
Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exc…
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Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of single-crystalline nanowires coupled to superconducting islands. Here, we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks having a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire "hashtags" reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens new avenues for the realization of epitaxial 3-dimensional quantum device architectures.
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Submitted 10 December, 2021; v1 submitted 3 May, 2017;
originally announced May 2017.
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Observation of Conductance Quantization in InSb Nanowire Networks
Authors:
Elham M. T. Fadaly,
Hao Zhang,
Sonia Conesa-Boj,
Diana Car,
Önder Gül,
Sébastien R. Plissard,
Roy L. M. Op het Veld,
Sebastian Kölling,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers
Abstract:
Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a…
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Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a certain sequence. Most of the proposed Majorana braiding circuits require nanowire networks with minimal disorder. Here, the electronic transport across a junction between two merged InSb nanowires is studied to investigate how disordered these nanowire networks are. Conductance quantization plateaus are observed in all contact pairs of the epitaxial InSb nanowire networks; the hallmark of ballistic transport behavior.
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Submitted 12 July, 2021; v1 submitted 15 March, 2017;
originally announced March 2017.
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Josephson radiation and shot noise of a semiconductor nanowire junction
Authors:
David J. van Woerkom,
Alex Proutski,
Ruben J. J. van Gulik,
Tamás Kriváchy,
Diana Car,
Sèbastian R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Attila Geresdi
Abstract:
We measured the Josephson radiation emitted by an InSb semiconductor nanowire junction utilizing photon assisted quasiparticle tunneling in an AC-coupled superconducting tunnel junction. We quantify the action of the local microwave environment by evaluating the frequency dependence of the inelastic Cooper-pair tunneling of the nanowire junction and find the zero frequency impedance $Z(0)=492\,Ω$…
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We measured the Josephson radiation emitted by an InSb semiconductor nanowire junction utilizing photon assisted quasiparticle tunneling in an AC-coupled superconducting tunnel junction. We quantify the action of the local microwave environment by evaluating the frequency dependence of the inelastic Cooper-pair tunneling of the nanowire junction and find the zero frequency impedance $Z(0)=492\,Ω$ with a cutoff frequency of $f_0=33.1\,$GHz. We extract a circuit coupling efficiency of $η\approx 0.1$ and a detector quantum efficiency approaching unity in the high frequency limit. In addition to the Josephson radiation, we identify a shot-noise contribution with a Fano factor $F\approx1$, consistently with the presence of single electron states in the nanowire channel.
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Submitted 21 October, 2017; v1 submitted 9 February, 2017;
originally announced February 2017.
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Hard superconducting gap in InSb nanowires
Authors:
Önder Gül,
Hao Zhang,
Folkert K. de Vries,
Jasper van Veen,
Kun Zuo,
Vincent Mourik,
Sonia Conesa-Boj,
Michał P. Nowak,
David J. van Woerkom,
Marina Quintero-Pérez,
Maja C. Cassidy,
Attila Geresdi,
Sebastian Koelling,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material system…
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Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor, and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (~ 0.5 Tesla), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two dimensional electron gases and topological insulators, and holds relevance for topological superconductivity and quantum computation.
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Submitted 12 August, 2024; v1 submitted 8 February, 2017;
originally announced February 2017.
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Conductance through a helical state in an InSb nanowire
Authors:
Jakob Kammhuber,
Maja C Cassidy,
Fei Pei,
Michal P Nowak,
Adriaan Vuik,
Diana Car,
Sèbastien R Plissard,
Erik P A M Bakkers,
Michael Wimmer,
Leo P Kouwenhoven
Abstract:
The motion of an electron and its spin are generally not coupled. However in a one dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and Cooper pair splitter devices and is an essential ingredient for…
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The motion of an electron and its spin are generally not coupled. However in a one dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and Cooper pair splitter devices and is an essential ingredient for realizing topologically protected quantum computing using Majorana zero modes. Here we report electrical conductance measurements of a quantum point contact (QPC) formed in an indium antimonide nanowire as a function of magnetic field. At magnetic fields exceeding 3T, the $2e^2/h$ plateau shows a reentrant conductance feature towards $1e^2/h$ which increases linearly in width with magnetic field before enveloping the $1e^2/h$ plateau. Rotating the external magnetic field either parallel or perpendicular to the spin-orbit field allows us to clearly attribute this experimental signature to SOI. We compare our observations with a model of a QPC incorporating SOI and extract a spin-orbit energy of ~6.5meV, which is significantly stronger than the SO energy obtained by other methods.
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Submitted 24 January, 2017;
originally announced January 2017.
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Hybrid Superconductor-Quantum Point Contact Devices using InSb Nanowires
Authors:
S. T. Gill,
J. Damasco,
D. Car,
E. P. A. M. Bakkers,
N. Mason
Abstract:
Proposals for studying topological superconductivity and Majorana bound states in nanowires proximity coupled to superconductors require that transport in the nanowire is ballistic. Previous work on hybrid nanowire-superconductor systems has shown evidence for Majorana bound states, but these experiments were also marked by disorder, which disrupts ballistic transport. In this letter, we demonstra…
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Proposals for studying topological superconductivity and Majorana bound states in nanowires proximity coupled to superconductors require that transport in the nanowire is ballistic. Previous work on hybrid nanowire-superconductor systems has shown evidence for Majorana bound states, but these experiments were also marked by disorder, which disrupts ballistic transport. In this letter, we demonstrate ballistic transport in InSb nanowires interfaced directly with superconducting Al by observing quantized conductance at zero-magnetic field. Additionally, we demonstrate that the nanowire is proximity coupled to the superconducting contacts by observing Andreev reflection. These results are important steps for robustly establishing topological superconductivity in InSb nanowires.
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Submitted 5 December, 2016;
originally announced December 2016.
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InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices
Authors:
Diana Car,
Sonia Conesa-Boj,
Hao Zhang,
Roy L. M. Op het Veld,
Michiel W. A. de Moor,
Elham M. T. Fadaly,
Önder Gül,
Sebastian Kölling,
Sebastien R. Plissard,
Vigdis Toresen,
Michael T. Wimmer,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers
Abstract:
Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and…
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Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB)-fits to the experimental I-V traces.
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Submitted 12 July, 2021; v1 submitted 17 November, 2016;
originally announced November 2016.
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Andreev Molecules in Semiconductor Nanowire Double Quantum Dots
Authors:
Zhaoen Su,
Alexandre B. Tacla,
Moïra Hocevar,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Andrew J. Daley,
David Pekker,
Sergey M. Frolov
Abstract:
Quantum simulation is a way to study unexplored Hamiltonians by mapping them onto the assemblies of well-understood quantum systems such as ultracold atoms in optical lattices, trapped ions or superconducting circuits. Semiconductor nanostructures which form the backbone of classical computing hold largely untapped potential for quantum simulation. In particular, chains of quantum dots in semicond…
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Quantum simulation is a way to study unexplored Hamiltonians by mapping them onto the assemblies of well-understood quantum systems such as ultracold atoms in optical lattices, trapped ions or superconducting circuits. Semiconductor nanostructures which form the backbone of classical computing hold largely untapped potential for quantum simulation. In particular, chains of quantum dots in semiconductor nanowires can be used to emulate one-dimensional Hamiltonians such as the toy model of a topological p-wave superconductor. Here we realize a building block of this model, a double quantum dot with superconducting contacts, in an indium antimonide nanowire. In each dot, tunnel-coupling to a superconductor induces Andreev bound states. We demonstrate that these states hybridize to form the double-dot Andreev molecular states. We establish the parity and the spin structure of Andreev molecular levels by monitoring their evolution in electrostatic potential and magnetic field. Understanding Andreev molecules is a key step towards building longer chains which are predicted to generate Majorana bound states at the end sites. Two superconducting quantum dots are already sufficient to test the fusion rules of Majorana bound states, a milestone towards fault-tolerant topological quantum computing.
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Submitted 17 November, 2016; v1 submitted 2 November, 2016;
originally announced November 2016.
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Experimental Phase Diagram of a One-Dimensional Topological Superconductor
Authors:
Jun Chen,
Peng Yu,
John Stenger,
Moïra Hocevar,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Tudor D. Stanescu,
Sergey M. Frolov
Abstract:
Topological superconductors can host Majorana quasiparticles which supersede the fermion/boson dichotomy and offer a pathway to fault tolerant quantum computation. In one-dimensional systems zero-energy Majorana states are bound to the ends of the topologically superconducting regions. An experimental signature of a Majorana bound state is a conductance peak at zero source-drain voltage bias in a…
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Topological superconductors can host Majorana quasiparticles which supersede the fermion/boson dichotomy and offer a pathway to fault tolerant quantum computation. In one-dimensional systems zero-energy Majorana states are bound to the ends of the topologically superconducting regions. An experimental signature of a Majorana bound state is a conductance peak at zero source-drain voltage bias in a tunneling experiment. Here, we identify the bulk topological phase in a semiconductor nanowire coupled to a conventional superconductor. We map out its phase diagram through the dependence of zero-bias peak on the chemical potential and magnetic field. Our findings are consistent with calculations for a finite-length topological nanowire. Knowledge of the phase diagram makes it possible to predictably tune nanowire segments in and out of the topological phase, thus controlling the positions and couplings of multiple Majorana bound states. This ability is a prerequisite for Majorana braiding, an experiment in which Majorana quantum states are exchanged in order to both demonstrate their non-abelian character and realize topological quantum bits.
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Submitted 14 October, 2016;
originally announced October 2016.
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Ballistic Majorana nanowire devices
Authors:
Önder Gül,
Hao Zhang,
Jouri D. S. Bommer,
Michiel W. A. de Moor,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Attila Geresdi,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven
Abstract:
Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor, several tunneling experiments reported characteristic Majorana signatures. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energ…
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Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor, several tunneling experiments reported characteristic Majorana signatures. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energy signatures of Majoranas, and renders the topological properties inaccessible. Here, we show characteristic Majorana signatures in InSb nanowire devices exhibiting clear ballistic transport properties. Application of a magnetic field and spatial control of carrier density using local gates generates a zero bias peak that is rigid over a large region in the parameter space of chemical potential, Zeeman energy, and tunnel barrier potential. The reduction of disorder allows us to resolve separate regions in the parameter space with and without a zero bias peak, indicating topologically distinct phases. These observations are consistent with the Majorana theory in a ballistic system, and exclude for the first time the known alternative explanations that invoke disorder or a nonuniform chemical potential.
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Submitted 26 April, 2021; v1 submitted 13 March, 2016;
originally announced March 2016.
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Conductance Quantization at zero magnetic field in InSb nanowires
Authors:
Jakob Kammhuber,
Maja C. Cassidy,
Hao Zhang,
Önder Gül,
Fei Pei,
Michiel W. A. de Moor,
Bas Nijholt,
Kenji Watanabe,
Takashi Taniguchi,
Diana Car,
Sebastien R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectri…
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Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally, studying the sub-band evolution in a rotating magnetic field reveals an orbital degeneracy between the second and third sub-bands for perpendicular fields above 1T.
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Submitted 11 March, 2016;
originally announced March 2016.
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Josephson $\varphi_{0}$-junction in nanowire quantum dots
Authors:
D. B. Szombati,
S. Nadj-Perge,
D. Car,
S. R. Plissard,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
The Josephson effect describes supercurrent flowing through a junction connecting two superconducting leads by a thin barrier [1]. This current is driven by a superconducting phase difference $φ$ between the leads. In the presence of chiral and time reversal symmetry of the Cooper pair tunneling process [2] the current is strictly zero when $φ$ vanishes. Only if these underlying symmetries are bro…
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The Josephson effect describes supercurrent flowing through a junction connecting two superconducting leads by a thin barrier [1]. This current is driven by a superconducting phase difference $φ$ between the leads. In the presence of chiral and time reversal symmetry of the Cooper pair tunneling process [2] the current is strictly zero when $φ$ vanishes. Only if these underlying symmetries are broken the supercurrent for $φ=0$ may be finite [3-5]. This corresponds to a ground state of the junction being offset by a phase $φ_{0}$, different from 0 or $π$. Here, we report such a Josephson $φ_{0}$-junction based on a nanowire quantum dot. We use a quantum interferometer device in order to investigate phase offsets and demonstrate that $φ_{0}$ can be controlled by electrostatic gating. Our results have possible far reaching implications for superconducting flux and phase defined quantum bits as well as for exploring topological superconductivity in quantum dot systems.
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Submitted 23 February, 2016; v1 submitted 3 December, 2015;
originally announced December 2015.
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Towards high mobility InSb nanowire devices
Authors:
Önder Gül,
David J. van Woerkom,
Ilse van Weperen,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility…
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We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of $\sim2.5\mathbin{\times}10^4$ cm$^2$/Vs. We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.
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Submitted 8 May, 2015; v1 submitted 26 November, 2014;
originally announced November 2014.