Showing 1–2 of 2 results for author: Burge, S R

Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

Authors: T. Ferrus, D. G. Hasko, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, G. A. D. Briggs

Abstract: We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosp… ▽ More We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosphorous-doped single-electron transistor. A single-shot technique is successfully implemented and used to observe the real time decay of a quantum state. A discussion on various measurement strategies is presented and the consequences on electron heating and noise are analysed. △ Less

Submitted 2 June, 2010; v1 submitted 21 April, 2009; originally announced April 2009.

Comments: 18 pages, 6 figures, published in J. Appl. Phys

Journal ref: J. Appl. Phys. 106, 033705 (2009)

Single shot measurement of a silicon single electron transistor

Authors: D. G. Hasko, T. Ferrus, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, G. A. D. Briggs

Abstract: We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pu… ▽ More We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 us are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing. △ Less

Submitted 21 November, 2008; v1 submitted 5 November, 2008; originally announced November 2008.

Journal ref: Appl. Phys. Lett. 93, 19, 192116 (2008)