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Fingerprints of the Strong Interaction between Monolayer MoS2 and Gold
Authors:
Matej Velicky,
Alvaro Rodriguez,
Milan Bousa,
Andrey V. Krayev,
Martin Vondracek,
Jan Honolka,
Mahdi Ahmadi,
Gavin E. Donnelly,
Fumin Huang,
Hector D. Abruna,
Kostya S. Novoselov,
Otakar Frank
Abstract:
Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution…
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Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution with the MoS2 thickness. Here, we identify specific vibrational and binding energy fingerprints of such strong interaction using Raman and X-ray photoelectron spectroscopy, which indicate substantial strain and charge-transfer in monolayer MoS2. Near-field tip-enhanced Raman spectroscopy reveals heterogeneity of the MoS2-Au interaction at the nanoscale, reflecting the spatial non-conformity between the two materials. Far-field micro-Raman spectroscopy shows that this interaction is strongly affected by the roughness and cleanliness of the underlying Au. Our results elucidate the nature of the strong MoS2-Au interaction and provide guidance for strain and charge doping engineering of MoS2.
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Submitted 15 April, 2020;
originally announced April 2020.
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Stress and charge transfer in uniaxially strained CVD graphene
Authors:
Milan Bousa,
George Anagnostopoulos,
Elena del Corro,
Karolina Drogowska,
Jan Pekarek,
Ladislav Kavan,
Martin Kalbac,
John Parthenios,
Konstantinos Papagelis,
Costas Galiotis,
Otakar Frank
Abstract:
Mechanical properties of graphene prepared by chemical vapor deposition (CVD) are not easily comparable to the properties of nearly perfect graphene prepared by mechanical cleavage. In this work, we attempt to investigate the mechanical performance of CVD graphene (simply supported or embedded in polymer matrix), transferred by two different techniques, under uniaxial loading with simultaneous in-…
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Mechanical properties of graphene prepared by chemical vapor deposition (CVD) are not easily comparable to the properties of nearly perfect graphene prepared by mechanical cleavage. In this work, we attempt to investigate the mechanical performance of CVD graphene (simply supported or embedded in polymer matrix), transferred by two different techniques, under uniaxial loading with simultaneous in-situ monitoring by Raman microspectroscopy. The level of charge transfer doping and strain is assessed using the vector analysis modified for uniaxial strain. The strain distribution across the samples varies significantly, owing to the growth and transfer process, which induces wrinkles and faults in the CVD graphene. In simply supported specimens, the stress transfer efficiency is generally very low and the changes in Raman spectra are dominated by variations in the charge transfer originating from the realignment of the domains on the substrate upon the application of strain. In contrast, samples covered with an additional polymer layer exhibit an improved stress transfer efficiency, and the alterations of charge doping levels are negligible. In fully embedded specimens, the variations in stress transfer efficiencies are caused by the size of the effective graphene domains defined by cracks, folds and or/wrinkles.
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Submitted 17 January, 2018;
originally announced January 2018.
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Fine Tuning of Optical Transition Energy of Twisted Bilayer Graphene via Interlayer Distance Modulation
Authors:
Elena del Corro,
Miriam Peña-Alvarez,
Kentaro Sato,
Angel Morales-Garcia,
Milan Bousa,
Michal Mračko,
Radek Kolman,
Barbara Pacakova,
Ladislav Kavan,
Martin Kalbac,
Otakar Frank
Abstract:
Twisted bilayer graphene (tBLG) represents a family of unique materials with optoelectronic properties tuned by the rotation angle between the two layers. The presented work shows an additional way of tweaking the electronic structure of tBLG: by modifying the interlayer distance, for example by a small uniaxial out-of-plane compression. We have focused on the optical transition energy, which show…
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Twisted bilayer graphene (tBLG) represents a family of unique materials with optoelectronic properties tuned by the rotation angle between the two layers. The presented work shows an additional way of tweaking the electronic structure of tBLG: by modifying the interlayer distance, for example by a small uniaxial out-of-plane compression. We have focused on the optical transition energy, which shows a clear dependence on the interlayer distance, both experimentally and theoretically.
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Submitted 1 February, 2017;
originally announced February 2017.
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Phonon and structural changes in deformed Bernal stacked bilayer graphene
Authors:
Otakar Frank,
Milan Bousa,
Ibtsam Riaz,
Rashid Jalil,
Kostya S. Novoselov,
Georgia Tsoukleri,
John Parthenios,
Ladislav Kavan,
Konstantinos Papagelis,
Costas Galiotis
Abstract:
We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers are strained evenly, certain effects stem from inhomogeneous stress distribution across the layers. These phenomena such as the removal of inversion symmetry in bilayer graphene may have important implications in the ban…
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We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers are strained evenly, certain effects stem from inhomogeneous stress distribution across the layers. These phenomena such as the removal of inversion symmetry in bilayer graphene may have important implications in the band-gap engineering providing an alternative route to induce the formation of a band-gap.
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Submitted 8 February, 2012;
originally announced February 2012.
