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Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields
Authors:
Irene Fernández de Fuentes,
Tim Botzem,
Mark A. I. Johnson,
Arjen Vaartjes,
Serwan Asaad,
Vincent Mourik,
Fay E. Hudson,
Kohei M. Itoh,
Brett C. Johnson,
Alexander M. Jakob,
Jeffrey C. McCallum,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and scalable coupling via exchange or dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature of…
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Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and scalable coupling via exchange or dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature of the interactions. Here, we present an atom-based semiconductor platform where a 16-dimensional Hilbert space is built by the combined electron-nuclear states of a single antimony donor in silicon. We demonstrate the ability to navigate this large Hilbert space using both electric and magnetic fields, with gate fidelity exceeding 99.8% on the nuclear spin, and unveil fine details of the system Hamiltonian and its susceptibility to control and noise fields. These results establish high-spin donors as a rich platform for practical quantum information and to explore quantum foundations.
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Submitted 14 June, 2023; v1 submitted 12 June, 2023;
originally announced June 2023.
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An electrically-driven single-atom `flip-flop' qubit
Authors:
Rostyslav Savytskyy,
Tim Botzem,
Irene Fernandez de Fuentes,
Benjamin Joecker,
Jarryd J. Pla,
Fay E. Hudson,
Kohei M. Itoh,
Alexander M. Jakob,
Brett C. Johnson,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states o…
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The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states of a phosphorus donor. The qubit is controlled using local electric fields at microwave frequencies, produced within a metal-oxide-semiconductor device. The electrical drive is mediated by the modulation of the electron-nuclear hyperfine coupling, a method that can be extended to many other atomic and molecular systems. These results pave the way to the construction of solid-state quantum processors where dense arrays of atoms can be controlled using only local electric fields.
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Submitted 2 January, 2023; v1 submitted 9 February, 2022;
originally announced February 2022.
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Measurement of back-action from electron spins in a gate defined GaAs double quantum dot coupled to a mesoscopic nuclear spin bath
Authors:
Patrick Bethke,
Robert P. G. McNeil,
Julian Ritzmann,
Tim Botzem,
Arne Ludwig,
Andreas D. Wieck,
Hendrik Bluhm
Abstract:
Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology applications. The effects of large, weakly coupled environments are often described as a classical, fluctuating field whose dynamics is unaffected by the qubit, whereas a f…
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Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology applications. The effects of large, weakly coupled environments are often described as a classical, fluctuating field whose dynamics is unaffected by the qubit, whereas a fully quantum description still implies some back-action from the qubit on the environment. Here we show direct experimental evidence for such a back-action for an electron-spin-qubit in a GaAs quantum dot coupled to a mesoscopic environment of order $10^6$ nuclear spins. By means of a correlation measurement technique, we detect the back-action of a single qubit-environment interaction whose duration is comparable to the qubit's coherence time, even in such a large system. We repeatedly let the qubit interact with the spin bath and measure its state. Between such cycles, the qubit is reinitialized to different states. The correlations of the measurement outcomes are strongly affected by the intermediate qubit state, which reveals the action of a single electron spin on the nuclear spins.
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Submitted 26 July, 2020; v1 submitted 26 June, 2019;
originally announced June 2019.
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Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage
Authors:
Pascal Cerfontaine,
Tim Botzem,
Julian Ritzmann,
Simon Sebastian Humpohl,
Arne Ludwig,
Dieter Schuh,
Dominique Bougeard,
Andreas D. Wieck,
Hendrik Bluhm
Abstract:
Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses…
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Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses new challenges for high-fidelity control. Here, we demonstrate exchange-based single-qubit gates of two-electron spin qubits in GaAs double quantum dots. Using careful pulse optimization and closed-loop tuning, we achieve a randomized benchmarking fidelity of $(99.50 \pm 0.04)\%$ and a leakage rate of $0.13\%$ out of the computational subspace. These results open new perspectives for microwave-free control of singlet-triplet qubits in GaAs and other materials.
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Submitted 22 January, 2021; v1 submitted 12 June, 2019;
originally announced June 2019.
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Tuning methods for semiconductor spin--qubits
Authors:
Tim Botzem,
Michael D. Shulman,
Sandra Foletti,
Shannon P. Harvey,
Oliver E. Dial,
Patrick Bethke,
Pascal Cerfontaine,
Robert P. G. McNeil,
Diana Mahalu,
Vladimir Umansky,
Arne Ludwig,
Andreas Wieck,
Dieter Schuh,
Dominique Bougeard,
Amir Yacoby,
Hendrik Bluhm
Abstract:
We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to t…
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We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to the surrounding leads and the identification of the various fast initialization points for the operation of the qubit. Since semiconductor-based spin qubits are compatible with standard semiconductor process technology and hence promise good prospects of scalability, the challenge of efficiently tuning the dot's parameters will only grow in the near future, once the multi-qubit stage is reached. With the anticipation of being used as the basis for future automated tuning protocols, all measurements presented here are fast-to-execute and easy-to-analyze characterization methods. They result in quantitative measures of the relevant qubit parameters within a couple of seconds, and require almost no human interference.
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Submitted 11 January, 2018;
originally announced January 2018.
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Feedback-tuned noise-resilient gates for encoded spin qubits
Authors:
Pascal Cerfontaine,
Tim Botzem,
Simon Sebastian Humpohl,
Dieter Schuh,
Dominique Bougeard,
Hendrik Bluhm
Abstract:
Two level quantum mechanical systems like spin 1/2 particles lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins reduces the resources necessary for qubit control and can protect from decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace…
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Two level quantum mechanical systems like spin 1/2 particles lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins reduces the resources necessary for qubit control and can protect from decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Here, we realize high-fidelity single qubit operations for a qubit encoded in two electron spins in GaAs quantum dots by iterative tuning of the all-electrical control pulses. Using randomized benchmarking, we find an average gate fidelity of $\mathcal{F} = (98.5 \pm 0.1)\,\%$ and determine the leakage rate between the computational subspace and other states to $\mathcal{L} = (0.4\pm0.1)\,\%$. These results also demonstrate that high fidelity gates can be realized even in the presence of nuclear spins as in III-V semiconductors.
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Submitted 6 June, 2016;
originally announced June 2016.
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Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs
Authors:
Tim Botzem,
Robert P. G. McNeil,
Dieter Schuh,
Dominique Bougeard,
Hendrik Bluhm
Abstract:
Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits. Interesting effects arise from the quadrupolar interaction of nuclear spins with electric field gradients, which have been shown to suppress diffusive nuclear s…
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Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits. Interesting effects arise from the quadrupolar interaction of nuclear spins with electric field gradients, which have been shown to suppress diffusive nuclear spin dynamics. One might thus expect them to enhance electron spin coherence. Here we show experimentally that for gate-defined GaAs quantum dots, quadrupolar broadening of the nuclear Larmor precession can also reduce electron spin coherence due to faster decorrelation of transverse nuclear fields. However, this effect can be eliminated for appropriate field directions. Furthermore, we observe an additional modulation of spin coherence that can be attributed to an anisotropic electronic $g$-tensor. These results complete our understanding of dephasing in gated quantum dots and point to mitigation strategies. They may also help to unravel unexplained behaviour in related systems such as self-assembled quantum dots and III-V nanowires.
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Submitted 20 August, 2015;
originally announced August 2015.
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High-Fidelity Single-Qubit Gates for Two-Electron Spin Qubits in GaAs
Authors:
Pascal Cerfontaine,
Tim Botzem,
David P. DiVincenzo,
Hendrik Bluhm
Abstract:
Single-qubit operations on singlet-triplet qubits in GaAs double quantum dots have not yet reached the fidelities required for fault-tolerant quantum information processing. Considering experimentally important constraints and using measured noise spectra, we numerically minimize the effect of decoherence (including high-frequency 1/f-like noise) and show theoretically that quantum gates with fide…
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Single-qubit operations on singlet-triplet qubits in GaAs double quantum dots have not yet reached the fidelities required for fault-tolerant quantum information processing. Considering experimentally important constraints and using measured noise spectra, we numerically minimize the effect of decoherence (including high-frequency 1/f-like noise) and show theoretically that quantum gates with fidelities higher than 99.9% are achievable. We also present a self-consistent tuning protocol which should allow the elimination of individual systematic gate errors directly in an experiment.
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Submitted 22 January, 2021; v1 submitted 7 April, 2014;
originally announced April 2014.