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Full-permutation dynamical decoupling in triple-quantum-dot spin qubits
Authors:
Bo Sun,
Teresa Brecht,
Bryan Fong,
Moonmoon Akmal,
Jacob Z. Blumoff,
Tyler A. Cain,
Faustin W. Carter,
Dylan H. Finestone,
Micha N. Fireman,
Wonill Ha,
Anthony T. Hatke,
Ryan M. Hickey,
Clayton A. C. Jackson,
Ian Jenkins,
Aaron M. Jones,
Andrew Pan,
Daniel R. Ward,
Aaron J. Weinstein,
Samuel J. Whiteley,
Parker Williams,
Matthew G. Borselli,
Matthew T. Rakher,
Thaddeus D. Ladd
Abstract:
Dynamical decoupling of spin qubits in silicon can enhance fidelity and be used to extract the frequency spectra of noise processes. We demonstrate a full-permutation dynamical decoupling technique that cyclically exchanges the spins in a triple-dot qubit. This sequence not only suppresses both low frequency charge-noise- and magnetic-noise-induced errors; it also refocuses leakage errors to first…
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Dynamical decoupling of spin qubits in silicon can enhance fidelity and be used to extract the frequency spectra of noise processes. We demonstrate a full-permutation dynamical decoupling technique that cyclically exchanges the spins in a triple-dot qubit. This sequence not only suppresses both low frequency charge-noise- and magnetic-noise-induced errors; it also refocuses leakage errors to first order, which is particularly interesting for encoded exchange-only qubits. For a specific construction, which we call NZ1y, the qubit is isolated from error sources to such a degree that we measure a remarkable exchange pulse error of $5\times10^{-5}$. This sequence maintains a quantum state for roughly 18,000 exchange pulses, extending the qubit coherence from $T_2^*=2~μ$s to $T_2 = 720~μ$s. We experimentally validate an error model that includes $1/f$ charge noise and $1/f$ magnetic noise in two ways: by direct exchange-qubit simulation, and by integration of the assumed noise spectra with derived filter functions, both of which reproduce the measured error and leakage with respect to changing the repetition rate.
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Submitted 7 September, 2022; v1 submitted 24 August, 2022;
originally announced August 2022.
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Universal logic with encoded spin qubits in silicon
Authors:
Aaron J. Weinstein,
Matthew D. Reed,
Aaron M. Jones,
Reed W. Andrews,
David Barnes,
Jacob Z. Blumoff,
Larken E. Euliss,
Kevin Eng,
Bryan Fong,
Sieu D. Ha,
Daniel R. Hulbert,
Clayton Jackson,
Michael Jura,
Tyler E. Keating,
Joseph Kerckhoff,
Andrey A. Kiselev,
Justine Matten,
Golam Sabbir,
Aaron Smith,
Jeffrey Wright,
Matthew T. Rakher,
Thaddeus D. Ladd,
Matthew G. Borselli
Abstract:
Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-…
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Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-yielding quantum dot arrays. Here we show a device made using the single-layer etch-defined gate electrode architecture that achieves both the required functional yield needed for full control and the coherence necessary for thousands of calibrated exchange pulses to be applied. We measure an average two-qubit Clifford fidelity of $97.1 \pm 0.2\%$ with randomized benchmarking. We also use interleaved randomized benchmarking to demonstrate the controlled-NOT gate with $96.3 \pm 0.7\%$ fidelity, SWAP with $99.3 \pm 0.5\%$ fidelity, and a specialized entangling gate that limits spreading of leakage with $93.8 \pm 0.7\%$ fidelity.
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Submitted 7 February, 2022;
originally announced February 2022.
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Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits
Authors:
Jacob Z. Blumoff,
Andrew S. Pan,
Tyler E. Keating,
Reed W. Andrews,
David W. Barnes,
Teresa L. Brecht,
Edward T. Croke,
Larken E. Euliss,
Jacob A. Fast,
Clayton A. C. Jackson,
Aaron M. Jones,
Joseph Kerckhoff,
Robert K. Lanza,
Kate Raach,
Bryan J. Thomas,
Roland Velunta,
Aaron J. Weinstein,
Thaddeus D. Ladd,
Kevin Eng,
Matthew G. Borselli,
Andrew T. Hunter,
Matthew T. Rakher
Abstract:
We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ($980$ ns) and initialization ($\approx 300$ ns) operations are performed with all-electrical, baseband control. We emphasize a leakage-sensitive joint initialization and measurement metric, developed in the context of exchange-only qubits but appli…
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We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ($980$ ns) and initialization ($\approx 300$ ns) operations are performed with all-electrical, baseband control. We emphasize a leakage-sensitive joint initialization and measurement metric, developed in the context of exchange-only qubits but applicable more broadly, and report an infidelity of $2.5\pm0.5\times 10^{-3}$. This result is enabled by a high-valley-splitting heterostructure, initialization at the 2-to-3 electron charge boundary, and careful assessment and mitigation of $T_1$ during spin-to-charge conversion. The ultimate fidelity is limited by a number of comparably-important factors, and we identify clear paths towards further improved fidelity and speed. Along with an observed single-qubit randomized benchmarking error rate of $1.7\times 10^{-3}$, this work demonstrates initialization, control, and measurement of Si/SiGe triple-dot qubits at fidelities and durations which are promising for scalable quantum information processing.
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Submitted 28 January, 2022; v1 submitted 17 December, 2021;
originally announced December 2021.
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A flexible design platform for Si/SiGe exchange-only qubits with low disorder
Authors:
Wonill Ha,
Sieu D. Ha,
Maxwell D. Choi,
Yan Tang,
Adele E. Schmitz,
Mark P. Levendorf,
Kangmu Lee,
James M. Chappell,
Tower S. Adams,
Daniel R. Hulbert,
Edwin Acuna,
Ramsey S. Noah,
Justine W. Matten,
Michael P. Jura,
Jeffrey A. Wright,
Matthew T. Rakher,
Matthew G. Borselli
Abstract:
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that ar…
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Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.
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Submitted 22 July, 2021;
originally announced July 2021.
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Split-Gate Cavity Coupler for Silicon Circuit Quantum Electrodynamics
Authors:
F. Borjans,
X. Croot,
S. Putz,
X. Mi,
S. M. Quinn,
A. Pan,
J. Kerckhoff,
E. J. Pritchett,
C. A. Jackson,
L. F. Edge,
R. S. Ross,
T. D. Ladd,
M. G. Borselli,
M. F. Gyure,
J. R. Petta
Abstract:
Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate…
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Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate $γ_c/2π$ = 36 MHz, and cavity decay rate $κ/2π$ = 1.2 MHz. The charge cavity coupling rate is in good agreement with device simulations. Our coupling technique can be extended to enable simultaneous coupling of multiple DQDs to the same cavity mode, opening the door to long-range coupling of semiconductor qubits using microwave frequency photons.
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Submitted 2 March, 2020;
originally announced March 2020.
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Quantifying error and leakage in an encoded Si/SiGe triple-dot qubit
Authors:
R. W. Andrews,
C. Jones,
M. D. Reed,
A. M. Jones,
S. D. Ha,
M. P. Jura,
J. Kerckhoff,
M. Levendorf,
S. Meenehan,
S. T. Merkel,
A. Smith,
B. Sun,
A. J. Weinstein,
M. T. Rakher,
T. D. Ladd,
M. G. Borselli
Abstract:
Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and…
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Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and can also allow logical control with a single type of entangling interaction while maintaining favorable features of the underlying physical system. Here we demonstrate a qubit encoded in a subsystem of three coupled electron spins confined in gated, isotopically enhanced silicon quantum dots. Using a modified "blind" randomized benchmarking protocol that determines both computational and leakage errors, we show that unitary operations have an average total error of 0.35%, with 0.17% of that coming from leakage driven by interactions with substrate nuclear spins. This demonstration utilizes only the voltage-controlled exchange interaction for qubit manipulation and highlights the operational benefits of encoded subsystems, heralding the realization of high-quality encoded multi-qubit operations.
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Submitted 6 December, 2018;
originally announced December 2018.
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Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots
Authors:
A. M. Jones,
E. J. Pritchett,
E. H. Chen,
T. E. Keating,
R. W. Andrews,
J. Z. Blumoff,
L. A. De Lorenzo,
K. Eng,
S. D. Ha,
A. A. Kiselev,
S. M. Meenehan,
S. T. Merkel,
J. A. Wright,
L. F. Edge,
R. S. Ross,
M. T. Rakher,
M. G. Borselli,
A. Hunter
Abstract:
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the mea…
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We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the measured splitting varies smoothly as a function of confinement gate biases. Not only does this demonstration prove the value of having an $in~situ$ excited-state measurement technique as part of a standard tune-up procedure, it also suggests that in typical Si/SiGe quantum dot devices, spin-blockade can be limited by lateral orbital excitation energy rather than valley splitting.
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Submitted 21 September, 2018;
originally announced September 2018.
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Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation
Authors:
M. D. Reed,
B. M. Maune,
R. W. Andrews,
M. G. Borselli,
K. Eng,
M. P. Jura,
A. A. Kiselev,
T. D. Ladd,
S. T. Merkel,
I. Milosavljevic,
E. J. Pritchett,
M. T. Rakher,
R. S. Ross,
A. E. Schmitz,
A. Smith,
J. A. Wright,
M. F. Gyure,
A. T. Hunter
Abstract:
We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-crossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunn…
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We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-crossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunnel coupling. We find that this method reduces the dephasing effect of charge noise by more than a factor of five in comparison to operation near a charge-state anti-crossing, increasing the number of observable exchange oscillations in our qubit by a similar factor. Performance also improves with exchange rate, favoring fast quantum operations.
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Submitted 21 March, 2016; v1 submitted 5 August, 2015;
originally announced August 2015.
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Undoped accumulation-mode Si/SiGe quantum dots
Authors:
Matthew G. Borselli,
Kevin Eng,
Richard S. Ross,
Thomas M. Hazard,
Kevin S. Holabird,
Biqin Huang,
Andrey A. Kiselev,
Peter W. Deelman,
Leslie D. Warren,
Ivan Milosavljevic,
Adele E. Schmitz,
Marko Sokolich,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrate…
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We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrated over more than nine orders of magnitude and independently confirmed by direct measurement within the bandwidth of our amplifiers. The inter-dot tunnel coupling at the (0,2)<-->(1,1) charge configuration anti-crossing is directly measured to quantify the control of a single inter-dot tunnel barrier gate. A simple exponential dependence is sufficient to describe each of these tunneling processes as a function of the controlling gate voltage.
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Submitted 4 August, 2014;
originally announced August 2014.
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Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
Authors:
Matthew G. Borselli,
Kevin Eng,
Edward T. Croke,
Brett M. Maune,
Biqin Huang,
Richard S. Ross,
Andrey A. Kiselev,
Peter W. Deelman,
Ivan Alvarado-Rodriguez,
Adele E. Schmitz,
Marko Sokolich,
Kevin S. Holabird,
Thomas M. Hazard,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double d…
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We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.
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Submitted 30 June, 2011;
originally announced June 2011.
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Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
Authors:
Matthew G. Borselli,
Richard S. Ross,
Andrey A. Kiselev,
Edward T. Croke,
Kevin S. Holabird,
Peter W. Deelman,
Leslie D. Warren,
Ivan Alvarado-Rodriguez,
Ivan Milosavljevic,
Fiona C. Ku,
Wah S. Wong,
Adele E. Schmitz,
Marko Sokolich,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings…
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We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings in these two devices were 120 and 270 μeV, suggesting the presence of atomically sharp interfaces in our heterostructures.
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Submitted 13 April, 2011; v1 submitted 6 December, 2010;
originally announced December 2010.
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Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor
Authors:
E. T. Croke,
M. G. Borselli,
M. F. Gyure,
S. S. Bui,
I. I. Milosavljevic,
R. S. Ross,
A. E. Schmitz,
A. T. Hunter
Abstract:
We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper well remains empty under the free surface. A small air-bridged gate contacts the surface, and is positively biased to draw laterally confined electrons into…
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We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper well remains empty under the free surface. A small air-bridged gate contacts the surface, and is positively biased to draw laterally confined electrons into the upper well. Electrons tunneling between this accumulation-mode dot and the lower well are detected using a quantum point contact (QPC), located slightly offset from the dot gate. The charge state of the dot is measured by monitoring the differential transconductance of the QPC near pinch-off. Addition spectra starting with N=0 were observed as a function of gate voltage. DC sensitivity to single electrons was determined to be as high as 8.6%, resulting in a signal-to-noise ratio of ~9:1 with an equivalent noise bandwidth of 12.1 kHz. Analysis of random telegraph signals associated with the zero to one electron transition allowed a measurement of the lifetimes for the filled and empty states of the one-electron dot: 0.38 ms and 0.22 ms, respectively, for a device with a 10 nm AlInAs tunnel barrier between the two wells.
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Submitted 19 October, 2009;
originally announced October 2009.
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Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
Authors:
Robert R. Hayes,
Andrey A. Kiselev,
Matthew G. Borselli,
Steven S. Bui,
Edward T. Croke III,
Peter W. Deelman,
Brett M. Maune,
Ivan Milosavljevic,
Jeong-Sun Moon,
Richard S. Ross,
Adele E. Schmitz,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman doublet. We have also measured T1 of single- and multi-electron spins in InGaAs quantum dots. The l…
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We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman doublet. We have also measured T1 of single- and multi-electron spins in InGaAs quantum dots. The lifetimes of the Si/SiGe system are appreciably longer than those for InGaAs dots for comparable magnetic field strengths, but both approach one second at sufficiently low fields (< 1 T for Si, and < 0.2 T for InGaAs).
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Submitted 2 August, 2009;
originally announced August 2009.
