Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
Authors:
Matthias Widmann,
Matthias Niethammer,
Dmitry Yu. Fedyanin,
Igor A. Khramtsov,
Torsten Rendler,
Ian D. Booker,
Jawad Ul Hassan,
Naoya Morioka,
Yu-Chen Chen,
Ivan G. Ivanov,
Nguyen Tien Son,
Takeshi Ohshima,
Michel Bockstedte,
Adam Gali,
Cristian Bonato,
Sang-Yun Lee,
Jörg Wrachtrup
Abstract:
Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of indi…
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Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the colour centre in an integrated silicon carbide opto-electronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active colour centres for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.
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Submitted 23 June, 2019; v1 submitted 13 June, 2019;
originally announced June 2019.
Coherent control of single spins in silicon carbide at room temperature
Authors:
Matthias Widmann,
Sang-Yun Lee,
Torsten Rendler,
Nguyen Tien Son,
Helmut Fedder,
Seoyoung Paik,
Li-Ping Yang,
Nan Zhao,
Sen Yang,
Ian Booker,
Andrej Denisenko,
Mohammad Jamali,
Seyed Ali Momenzadeh,
Ilja Gerhardt,
Takeshi Ohshima,
Adam Gali,
Erik Janzén,
Jörg Wrachtrup
Abstract:
Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fa…
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Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fabrication techniques. Here we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence time under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.
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Submitted 31 October, 2014; v1 submitted 1 July, 2014;
originally announced July 2014.
