Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates
Authors:
Dawid Jarosz,
Ewa Bobko,
Marcin Stachowicz,
Ewa Przeździecka,
Piotr Krzemiński,
Marta Ruszała,
Anna Juś,
Małgorzata Trzyna-Sowa,
Kinga Maś,
Renata Wojnarowska-Nowak,
Oskar Nowak,
Daria Gudyka,
Brajan Tabor,
Michał Marchewka
Abstract:
This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three different methods: metamorphic, interfacial misfit (IMF) matrix, and a method based on a Polish patent application number P.443805. The first two methods are commonly used, while the third differs in the sequence of successive…
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This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three different methods: metamorphic, interfacial misfit (IMF) matrix, and a method based on a Polish patent application number P.443805. The first two methods are commonly used, while the third differs in the sequence of successive steps and the presence of Be doping at the initial growth stage. By comparing GaSb layers made by these methods for the same growth parameters, the most favorable procedure for forming a GaSb buffer layer is selected. Using GaAs substrates with a GaSb buffer layer is a cheaper alternative to using GaSb substrates in infrared detector structures based on II-type superlattices T2SL, such as InAs/GaSb. The quality of the GaSb buffer layer determines the quality of the subsequent layers that form the entire T2SL and affects factors such as dark current in terms of application
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Submitted 25 September, 2024;
originally announced September 2024.
Conductance resonances and crossing of the edge channels in the quantum Hall ferromagnet state of Cd(Mn)Te microstructures
Authors:
E. Bobko,
D. Płoch,
D. Śnieżek,
M. Majewicz,
M. Fołtyn,
T. Wojciechowski,
S. Chusnutdinow,
T. Wojtowicz,
J. Wróbel
Abstract:
In this paper we report on the observation of very high and narrow magnetoconductance peaks which we attribute to the transition to quantum Hall ferromagnet (QHFM) state occurring at the edges of the sample. We show that the expected spatial degeneracy of chiral edge channels is spontaneously lifted in agreement with theoretical studies performed within the Hartree-Fock approximation. We indicate…
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In this paper we report on the observation of very high and narrow magnetoconductance peaks which we attribute to the transition to quantum Hall ferromagnet (QHFM) state occurring at the edges of the sample. We show that the expected spatial degeneracy of chiral edge channels is spontaneously lifted in agreement with theoretical studies performed within the Hartree-Fock approximation. We indicate also that separated edge currents which flow in parallel, may nevertheless cross at certain points, giving rise to the formation of topological defects or one-dimensional magnetic domains. Furthermore, we find that such local crossing of chiral channels can be induced on demand by coupling spin states of a Landau level to different current terminals and applying a DC source-drain voltage.
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Submitted 11 April, 2019; v1 submitted 10 April, 2018;
originally announced April 2018.