Showing 1–50 of 67 results for author: Bertrand, B

Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays

Authors: Pierre Hamonic, Martin Nurizzo, Jayshankar Nath, Matthieu C. Dartiailh, Victor El-Homsy, Mathis Fragnol, Biel Martinez, Pierre-Louis Julliard, Bruna Cardoso Paz, Mathilde Ouvrier-Buffet, Jean-Baptiste Filippini, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Franck Balestro, Tristan Meunier, Matias Urdampilleta

Abstract: Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore,… ▽ More Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore, to scale-up a spin-based architecture we must change how individual charges are readout and controlled. Here, we demonstrate single-spin occupancy of each dot in a foundry-fabricated array by combining two methods. 1/ Loading a finite number of electrons into the quantum dot array; simplifying electrostatic tuning by isolating the array from the reservoirs. 2/ Deploying multiplex gate-based reflectometry to dispersively probe charge tunneling and spin states without charge sensors or reservoirs. Our isolated arrays probed by embedded multiplex readout can be readily electrostatically tuned. They are thus a viable, scalable approach for spin-based quantum architectures. △ Less

Submitted 3 October, 2024; originally announced October 2024.

Comments: 15 pages 5 figures

Searching for large dark matter clumps using the Galileo Satnav clock variations

Authors: Bruno Bertrand, Pascale Defraigne, Aurélien Hees, Alexandra Sheremet, Clément Courde, Julien Chabé, Javier Ventura-Traveset, Florian Dilssner, Erik Schoenemann, Luis Mendes, Pacôme Delva

Abstract: This study presents bounds on transient variations of fundamental constants, with typical timescales ranging from minutes to months, using clocks in space. The underlying phenomenology describing such transient variations relies on models for Dark Matter (DM) which suggest possible encounters of macroscopic compact objects with the Earth, due to the motion of the solar system in the galactic halo.… ▽ More This study presents bounds on transient variations of fundamental constants, with typical timescales ranging from minutes to months, using clocks in space. The underlying phenomenology describing such transient variations relies on models for Dark Matter (DM) which suggest possible encounters of macroscopic compact objects with the Earth, due to the motion of the solar system in the galactic halo. If such compact objects possess an effective feeble interaction with the ordinary matter beyond the gravitational one, it may result in effective transient variations of fundamental constants. Such variations leave signatures on clocks onboard GNSS satellites. In this paper, we introduce a phenomenological study dedicated to the search for such DM transient objects using the network of passive hydrogen masers (H-Masers) onboard Galileo satellites. We first model the signature of transient variations of fundamental constants as a frequency modulation in the difference between two satellite clocks, considering the satellite trajectories relative to the transient event. Then, we present first results based on a fast analysis method, the maximum reach analysis. The main result is a significant extension of the discovery range for DM transients, with a sensitivity never achieved before. We investigate indeed the range of transient sizes from $10^5$ to $10^9$ kilometres, which, apart from indirect and model-dependent non-transient effects, has never been explored previously. △ Less

Submitted 26 March, 2024; originally announced March 2024.

Comments: 13 pages, 11 figures, version accepted for publication in Advances in Space Research

MSC Class: 83C56 (Primary) 81V45 (Secondary)

Probing Primordial Black Holes and Dark Matter Clumps in the Solar System with Gravimeter and GNSS Networks

Authors: Michal Cuadrat-Grzybowski, Sébastien Clesse, Pascale Defraigne, Michel Van Camp, Bruno Bertrand

Abstract: We show that Global Navigation Satellite Systems (GNSS) and gravimeters on Earth and in space can potentially offer the most accurate direct measurement of local density of near-Earth asteroid-mass Primordial Black Holes (PBHs) and Dark Matter (DM) clumps in the solar system by means of gravitational influence. Using semi-analytical methods and Monte Carlo simulation, this paper revisits the analy… ▽ More We show that Global Navigation Satellite Systems (GNSS) and gravimeters on Earth and in space can potentially offer the most accurate direct measurement of local density of near-Earth asteroid-mass Primordial Black Holes (PBHs) and Dark Matter (DM) clumps in the solar system by means of gravitational influence. Using semi-analytical methods and Monte Carlo simulation, this paper revisits the analysis of the trajectories of DM clumps in the solar system, including both captured objects and hyperbolic trajectories. A link is thus made between the frequency and distance of Earth overflights for a given mass flux, and a direct measure of dark matter clump density in the solar system. We then model the signature of a close flyby of a DM object on orbital data from GNSS satellites and gravity measurements from gravimeters. We thus obtain a first assessment of the single probe sensitivity. It paves the way for an exhaustive statistical analysis of 28 years of gravimeters and GNSS data to obtain observational constraints on the density of the PBHs and DM clumps within the solar system, for the mass range $[10^8-10^{17}]$ kg. In addition, our methodology offers a possibility of direct detection in cases where DM clumps are endowed with an additional long-range clump-matter fifth-force beyond gravity. △ Less

Submitted 21 March, 2024; originally announced March 2024.

Comments: 27 pages, 30 figures

MSC Class: 83C56 (Primary) 70M20; 83C57; 86A15 (Secondary)

Observing dark matter clumps and asteroid-mass primordial black holes in the solar system with gravimeters and GNSS networks

Authors: Bruno Bertrand, Michal Cuadrat-Grzybowski, Pascale Defraigne, Michel Van Camp, Sébastien Clesse

Abstract: In this proceedings, we study the possible gravitational impact of primordial black holes (PBHs) or dark matter (DM) clumps on GNSS satellite orbits and gravimeter measurements. It provides a preliminary step to the future exhaustive statistical analysis over 28 years of gravimeter and GNSS data to get constraints over the density of asteroid-mass PBH and DM clumps inside the solar system. Such co… ▽ More In this proceedings, we study the possible gravitational impact of primordial black holes (PBHs) or dark matter (DM) clumps on GNSS satellite orbits and gravimeter measurements. It provides a preliminary step to the future exhaustive statistical analysis over 28 years of gravimeter and GNSS data to get constraints over the density of asteroid-mass PBH and DM clumps inside the solar system. Such constraints would be the first to be obtained by direct observation on a terrestrial scale. △ Less

Submitted 22 December, 2023; originally announced December 2023.

Comments: Contribution to the 2023 Gravitation session of the 57th Rencontres de Moriond

MSC Class: 83C56 (Primary) 70M20; 83C57; 86A15 (Secondary)

Real-time milli-Kelvin thermometry in a semiconductor qubit architecture

Authors: Victor Champain, Vivien Schmitt, Benoit Bertrand, Heimanu Niebojewski, Romain Maurand, Xavier Jehl, Clemens Winkelmann, Silvano De Franceschi, Boris Brun

Abstract: We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local electron or phonon temperatures with $μ$s-scale time resolution and a noise equivalent temperature of $3$ $\rm mK/\sqrt{\rm Hz}$. Following the application of short m… ▽ More We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local electron or phonon temperatures with $μ$s-scale time resolution and a noise equivalent temperature of $3$ $\rm mK/\sqrt{\rm Hz}$. Following the application of short microwave pulses, causing local periodic heating, time-dependent thermometry can track the dynamics of thermal excitation and relaxation, revealing clearly different characteristic time scales. This work opens important prospects to investigate the out-of-equilibrium thermal properties of semiconductor quantum electronic devices operating at very low temperature. In particular, it may provide a powerful handle to understand heating effects recently observed in semiconductor spin-qubit systems. △ Less

Submitted 20 June, 2024; v1 submitted 24 August, 2023; originally announced August 2023.

Comments: 7 pages 4 figures (supp. mat. 6 pages and 5 figures)

Journal ref: Phys. Rev. Applied 21, 064039 (2024)

Broadband parametric amplification for multiplexed SiMOS quantum dot signals

Authors: Victor Elhomsy, Luca Planat, David J. Niegemann, Bruna Cardoso-Paz, Ali Badreldin, Bernhard Klemt, Vivien Thiney, Renan Lethiecq, Eric Eyraud, Matthieu C. Dartiailh, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Tristan Meunier, Nicolas Roch, Matias Urdampilleta

Abstract: Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires the already existing transistor gates to readout a quantum dot state, relieving the need for addit… ▽ More Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires the already existing transistor gates to readout a quantum dot state, relieving the need for additional elements. In this effort towards scalability, traveling-wave superconducting parametric amplifiers significantly enhance the readout signal-to-noise ratio (SNR) by reducing the noise below typical cryogenic low-noise amplifiers, while offering a broad amplification band, essential to multiplex the readout of multiple resonators. In this work, we demonstrate a 3GHz gate-based reflectometry readout of electron charge states trapped in quantum dots formed in SiMOS multi-gate devices, with SNR enhanced thanks to a Josephson traveling-wave parametric amplifier (JTWPA). The broad, tunable 2GHz amplification bandwidth combined with more than 10dB ON/OFF SNR improvement of the JTWPA enables frequency and time division multiplexed readout of interdot transitions, and noise performance near the quantum limit. In addition, owing to a design without superconducting loops and with a metallic ground plane, the JTWPA is flux insensitive and shows stable performances up to a magnetic field of 1.2T at the quantum dot device, compatible with standard SiMOS spin qubit experiments. △ Less

Submitted 2 August, 2023; v1 submitted 27 July, 2023; originally announced July 2023.

RF simulation platform of qubit control using FDSOI technology for quantum computing

Authors: H. Jacquinot, R. Maurand, G. Troncoso Fernandez Bada, B. Bertrand, M. Cassé, Y. M. Niquet, S. de Franceschi, T. Meunier, M. Vinet

Abstract: In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the mag… ▽ More In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the magnetic and electric field distribution, we found that the EM environment of the qubits contributes significantly to the ESR line efficiency for spin control characterized by the magnetic over electric field ratio generated at the qubit location. △ Less

Submitted 7 April, 2023; originally announced April 2023.

Comments: 11 pages, 8 figures, Solid State Electronics (2022)

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Authors: Bernhard Klemt, Victor El-Homsy, Martin Nurizzo, Pierre Hamonic, Biel Martinez, Bruna Cardoso Paz, Cameron spence, Matthieu Dartiailh, Baptiste Jadot, Emmanuel Chanrion, Vivien Thiney, Renan Lethiecq, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting… ▽ More For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric field and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 11 pages, 10 figures

A quantum dot-based frequency multiplier

Authors: G. A. Oakes, L. Peri, L. Cochrane, F. Martins, L. Hutin, B. Bertrand, M. Vinet, A. Gomez Saiz, C. J. B. Ford, C. G. Smith, M. F. Gonzalez-Zalba

Abstract: Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance… ▽ More Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance-voltage characteristics of quantum dot systems arising from their low-dimensional density of states. We implement the multiplier in a multi-gate silicon nanowire transistor using two complementary device configurations: a single quantum dot coupled to a charge reservoir and a coupled double quantum dot. We study the harmonic voltage conversion as a function of energy detuning, multiplication factor and harmonic phase noise and find near ideal performance up to a multiplication factor of 10. Our results demonstrate a method for high-frequency conversion that could be readily integrated into silicon-based quantum computing systems and be applied to other semiconductors. △ Less

Submitted 25 November, 2022; originally announced November 2022.

Comments: 17 pages, 16 figures

Probing charge noise in few electron CMOS quantum dots

Authors: Cameron Spence, Bruna Cardoso-Paz, Vincent Michal, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Pierre-André Mortemousque, Bernhard Klemt, Vivien Thiney, Benoit Bertrand, Louis Hutin, Christopher Bäuerle, Franck Balestro, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot c… ▽ More Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot configurations, finding that it is possible to tune the charge noise over two orders of magnitude, ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the top interface and the reservoirs are the main sources of charge noise and their effect can be mitigated by controlling the quantum dot extension. Additionally, we demonstrate a novel method for the measurement of the charge noise experienced by a quantum dot in the few electron regime. We measure a comparatively higher charge noise value of 40 ueV^2 at the first electron, and demonstrate that the charge noise is highly dependent on the electron occupancy of the quantum dot. △ Less

Submitted 5 September, 2022; originally announced September 2022.

Comments: 6 pages 5 figures, supplementary materials included

Parity and singlet-triplet high fidelity readout in a silicon double quantum dot at 0.5 K

Authors: David J. Niegemann, Victor El-Homsy, Baptiste Jadot, Martin Nurizzo, Bruna Cardoso-Paz, Emmanuel Chanrion, Matthieu Dartiailh, Bernhard Klemt, Vivien Thiney, Christopher Bäuerle, Pierre-André Mortemousque, Benoit Bertrand, Heimanu Niebojewski, Maud Vinet, Franck Balestro, Tristan Meunier, Matias Urdampilleta

Abstract: We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keep… ▽ More We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keeping the same spin state with $a \approx 95.6\%$ fidelity. △ Less

Submitted 21 July, 2022; originally announced July 2022.

Comments: 13 pages, 12 figures

Strong coupling between a photon and a hole spin in silicon

Authors: Cécile X. Yu, Simon Zihlmann, José C. Abadillo-Uriel, Vincent P. Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Etienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand

Abstract: Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a supe… ▽ More Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible MOS fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330~MHz largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots. △ Less

Submitted 9 May, 2023; v1 submitted 28 June, 2022; originally announced June 2022.

Comments: 7 pages, 4 figures of main text, 19 pages, 12 figures of supplementary material

Journal ref: Nature Nanotechnology 18, 741-746 (2023)

Fast high-fidelity single-shot readout of spins in silicon using a single-electron box

Authors: G. A. Oakes, V. N. Ciriano-Tejel, D. Wise, M. A. Fogarty, T. Lundberg, C. Lainé, S. Schaal, F. Martins, D. J. Ibberson, L. Hutin, B. Bertrand, N. Stelmashenko, J. A. W. Robinson, L. Ibberson, A. Hashim, I. Siddiqi, A. Lee, M. Vinet, C. G. Smith, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we… ▽ More Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 $μ$s. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors. △ Less

Submitted 13 March, 2022; originally announced March 2022.

Comments: Main: 9 pages, 4 figures, 1 table. Supplementary: 33 pages, 18 figures

A single hole spin with enhanced coherence in natural silicon

Authors: N. Piot, B. Brun, V. Schmitt, S. Zihlmann, V. P. Michal, A. Apra, J. C. Abadillo-Uriel, X. Jehl, B. Bertrand, H. Niebojewski, L. Hutin, M. Vinet, M. Urdampilleta, T. Meunier, Y. -M. Niquet, R. Maurand, S. De Franceschi

Abstract: Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a… ▽ More Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $μ$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing. △ Less

Submitted 25 September, 2022; v1 submitted 21 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology 17, 1072-1077 (2022)

Quantum Dot-Based Parametric Amplifiers

Authors: Laurence Cochrane, Theodor Lundberg, David J. Ibberson, Lisa Ibberson, Louis Hutin, Benoit Bertrand, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Ashwin A. Seshia, M. Fernando Gonzalez-Zalba

Abstract: Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for p… ▽ More Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for parametric amplification. We experimentally demonstrate phase-sensitive parametric amplification using a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8~GHz superconducting lumped-element microwave cavity, achieving parametric gains of -3 to +3 dB, limited by Sisyphus dissipation. Using a semi-classical model, we find an optimised design within current technological capabilities could achieve gains and bandwidths comparable to JPAs, while providing complementary specifications with respect to integration in semiconductor platforms or operation at higher magnetic fields. △ Less

Submitted 2 December, 2021; v1 submitted 23 November, 2021; originally announced November 2021.

Comments: 7 pages, 4 figures

Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot

Authors: Theodor Lundberg, David J. Ibberson, Jing Li, Louis Hutin, José C. Abadillo-Uriel, Michele Filippone, Benoit Bertrand, Andreas Nunnenkamp, Chang-Min Lee, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Lisa Ibberson, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mech… ▽ More Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mechanism in a silicon double quantum dot due to incoherent tunneling between different spin manifolds. Through dispersively-detected magnetospectroscopy of the double quantum dot in 16 charge configurations, we find the mechanism to be energy-level selective and non-reciprocal for neighbouring charge configurations. Additionally, using input-output theory we report a large coupling of different electron spin manifolds of 7.90 $μ$eV, the largest reported to date, indicating an enhanced spin-orbit coupling which may enable all-electrical qubit control. △ Less

Submitted 20 October, 2021; v1 submitted 19 October, 2021; originally announced October 2021.

Comments: 12 pages, 10 figures. Minor updates to notation

Journal ref: npj Quantum Information 10, 28 (2024)

Spin-valley coupling anisotropy and noise in CMOS quantum dots

Authors: Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Vivien Thiney, Benoit Bertrand, Heimanu Niebojewski, Pierre-André Mortemousque, Xavier Jehl, Romain Maurand, Silvano De Franceschi, Maud Vinet, Franck Balestro, Christopher Bäuerle, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire devi… ▽ More One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the dependence expected from the symmetry of the local confinement, indicating low disorder in the region of the quantum dot. Finally the charge noise in the spin-valley coupling regime is investigated and found to induce fluctuations in the qubit energy in the range of $0.6GHz/\sqrt{Hz}$. △ Less

Submitted 28 September, 2021; originally announced September 2021.

Comments: 4 figures

Valley population of donor states in highly strained silicon

Authors: B. Voisin, K. S. H. Ng, J. Salfi, M. Usman, J. C. Wong, A. Tankasala, B. C. Johnson, J. C. McCallum, L. Hutin, B. Bertrand, M. Vinet, N. Valanoor, M. Y. Simmons, R. Rahman, L. C. L. Hollenberg, S. Rogge

Abstract: Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.… ▽ More Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.8% and their wave function imaged using spatially resolved spectroscopy. A prevalence of the out-of-plane valleys is confirmed from the real-space images, and a combination of theoretical modelling tools is used to assess how this valley repopulation effect can yield isotropic exchange and tunnel interactions in the $xy$-plane relevant for atomically precise donor qubit devices. Finally, the residual presence of in-plane valleys is evidenced by a Fourier analysis of both experimental and theoretical images, and atomistic calculations highlight the importance of higher orbital excited states to obtain a precise relationship between valley population and strain. Controlling the valley degree of freedom in engineered strained epilayers provides a new competitive asset for the development of donor-based quantum technologies in silicon. △ Less

Submitted 17 September, 2021; originally announced September 2021.

A test platform for the detection and readout chain for the Athena X-IFU

Authors: Gabriele Betancourt-Martinez, François Pajot, Sophie Beaumont, Gilles Roudil, Joseph Adams, Hiroki Akamatsu, Simon Bandler, Bernard Bertrand, Marcel Bruijn, Florent Castellani, Edoardo Cucchetti, William Doriese, Michel Dupieux, Hervé Geoffray, Luciano Gottardi, Brian Jackson, Jan van der Kuur, Mikko Kiviranta, Antoine Miniussi, Phillipe Peille, Kevin Ravensberg, Laurent Ravera, Carl Reintsema, Kazuhiro Sakai, Stephen Smith , et al. (4 additional authors not shown)

Abstract: We present a test platform for the Athena X-IFU detection chain, which will serve as the first demonstration of the representative end-to-end detection and readout chain for the X-IFU, using prototypes of the future flight electronics and currently available subsystems. This test bench, housed in a commercial two-stage ADR cryostat, includes a focal plane array placed at the 50 mK cold stage of th… ▽ More We present a test platform for the Athena X-IFU detection chain, which will serve as the first demonstration of the representative end-to-end detection and readout chain for the X-IFU, using prototypes of the future flight electronics and currently available subsystems. This test bench, housed in a commercial two-stage ADR cryostat, includes a focal plane array placed at the 50 mK cold stage of the ADR with a kilopixel array of transition-edge sensor microcalorimeter spectrometers and associated cold readout electronics. Prototype room temperature electronics for the X-IFU provide the readout, and will evolve over time to become more representative of the X-IFU mission baseline. The test bench yields critical feedback on subsystem designs and interfaces, in particular the warm readout electronics, and will provide an in-house detection system for continued testing and development of the warm readout electronics and for the validation of X-ray calibration sources. In this paper, we describe the test bench subsystems and design, characterization of the cryostat, and current status of the project. △ Less

Submitted 7 July, 2021; originally announced July 2021.

Comments: 11 pages, 4 figures, to appear in Proc. SPIE Astronomical Telescopes and Instrumentation, 2020

Dispersively probed microwave spectroscopy of a silicon hole double quantum dot

Authors: Rami Ezzouch, Simon Zihlmann, Vincent P. Michal, Jing Li, Agostino Aprá, Benoit Bertrand, Louis Hutin, Maud Vinet, Matias Urdampilleta, Tristan Meunier, Xavier Jehl, Yann-Michel Niquet, Marc Sanquer, Silvano De Franceschi, Romain Maurand

Abstract: Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layou… ▽ More Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation. △ Less

Submitted 28 January, 2021; v1 submitted 31 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Applied 16, 034031 (2021)

Gate reflectometry in dense quantum dot arrays

Authors: Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele, Torbjørn Rasmussen, Bertram Brovang, Fabrizio Berritta, Amber Heskes, Jing Li, Louis Hutin, Benjamin Venitucci, Benoit Bertrand, Maud Vinet, Yann-Michel Niquet, Anasua Chatterjee, Ferdinand Kuemmeth

Abstract: Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Uti… ▽ More Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2$\times$N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors. △ Less

Submitted 5 June, 2023; v1 submitted 8 December, 2020; originally announced December 2020.

Comments: 13 pages including appendices and 9 figures

Report number: NBI QDEV 2023

Journal ref: New J. Phys. 25, 033023 (2023)

Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling

Authors: V. N. Ciriano-Tejel, M. A. Fogarty, S. Schaal, L. Hutin, B. Bertrand, Lisa Ibberson, M. F. Gonzalez-Zalba, J. Li, Y. -M. Niquet, M. Vinet, J. J. L. Morton

Abstract: Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, w… ▽ More Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 \pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures. △ Less

Submitted 12 June, 2020; v1 submitted 15 May, 2020; originally announced May 2020.

Comments: 8 pages, 4 figures, 57 cites. v3: added acknowledges

Journal ref: PRX Quantum 2, 010353 (2021)

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Authors: Will Gilbert, Andre Saraiva, Wee Han Lim, Chih Hwan Yang, Arne Laucht, Benoit Bertrand, Nils Rambal, Louis Hutin, Christopher C. Escott, Maud Vinet, Andrew S. Dzurak

Abstract: The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in uni… ▽ More The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in university-fabricated multi-gate designs. We show here that the charge state of quantum dots formed in a CMOS nanowire device can be sensed by using floating gates to electrostatically couple it to a remote single electron transistor (SET) formed in an adjacent nanowire. By biasing the nanowire and gates of the remote SET with respect to the nanowire hosting the quantum dots, we controllably form ancillary quantum dots under the floating gates, thus enabling the demonstration of independent control over charge transitions in a quadruple (2x2) quantum dot array. This device overcomes the limitations associated with measurements based on tunnelling transport through the dots and permits the sensing of all charge transitions, down to the last electron in each dot. We use effective mass theory to investigate the necessary optimization of the device parameters in order to achieve the tunnel rates required for spin-based quantum computation. △ Less

Submitted 24 April, 2020; originally announced April 2020.

Comments: 12 pages and 6 figures, including supplementary material

Journal ref: Nano Lett. 2020, 20, 11, 7882-7888

Charge detection in an array of CMOS quantum dots

Authors: Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand, Cameron Spence, Baptiste Jadot, Jing Li, Pierre-André Mortemousque, Louis Hutin, Romain Maurand, Xavier Jehl, Marc Sanquer, Silvano De Franceschi, Christopher Bäuerle, Franck Balestro, Yann-Michel Niquet, Maud Vinet, Tristan Meunier, Matias Urdampilleta

Abstract: The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state an… ▽ More The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots. △ Less

Submitted 3 April, 2020; v1 submitted 2 April, 2020; originally announced April 2020.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Applied 14, 024066 (2020)

Single-electron control in a foundry-fabricated two-dimensional qubit array

Authors: Fabio Ansaloni, Anasua Chatterjee, Heorhii Bohuslavskyi, Benoit Bertrand, Louis Hutin, Maud Vinet, Ferdinand Kuemmeth

Abstract: Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A significant next step for the development of scalable multi-qubit processors is the operation of foundry-fabricated, extendable two-dimensional (2D) arrays. In gallium arsenide, 2D quantum-dot arrays recently allowed coh… ▽ More Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A significant next step for the development of scalable multi-qubit processors is the operation of foundry-fabricated, extendable two-dimensional (2D) arrays. In gallium arsenide, 2D quantum-dot arrays recently allowed coherent spin operations and quantum simulations. In silicon, 2D arrays have been limited to transport measurements in the many-electron regime. Here, we operate a foundry-fabricated silicon 2x2 array in the few-electron regime, achieving single-electron occupation in each of the four gate-defined quantum dots, as well as reconfigurable single, double, and triple dots with tunable tunnel couplings. Pulsed-gate and gate-reflectometry techniques permit single-electron manipulation and single-shot charge readout, while the two-dimensionality allows the spatial exchange of electron pairs. The compact form factor of such arrays, whose foundry fabrication can be extended to larger 2xN arrays, along with the recent demonstration of coherent spin control and readout, paves the way for dense qubit arrays for quantum computation and simulation. △ Less

Submitted 3 April, 2020; v1 submitted 2 April, 2020; originally announced April 2020.

Comments: 9 pages (including supplementary information and 5 figures)

Report number: NBI QDEV 2020

Journal ref: Nature Communications 11, 6399 (2020)

Large dispersive interaction between a CMOS double quantum dot and microwave photons

Authors: David J. Ibberson, Theodor Lundberg, James A. Haigh, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Chang-Min Lee, Nadia A. Stelmashenko, Giovanni A. Oakes, Laurence Cochrane, Jason W. A. Robinson, Maud Vinet, M. Fernando Gonzalez-Zalba, Lisa A. Ibberson

Abstract: We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2π) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device,… ▽ More We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2π) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $α=0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_\text{r}=560~Ω$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems. △ Less

Submitted 14 May, 2021; v1 submitted 1 April, 2020; originally announced April 2020.

Comments: Accepted manuscript

Journal ref: PRX Quantum 2, 020315 (2021)

28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing

Authors: H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barral, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. De Franceschi, M. Vinet

Abstract: This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher d… ▽ More This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned. △ Less

Submitted 20 December, 2019; originally announced February 2020.

Journal ref: 2017 Silicon Nanoelectronics Workshop (SNW), Kyoto, 2017, pp. 143-144

Fundamental physics tests using the propagation of GNSS signals

Authors: Bruno Bertrand, Pascale Defraigne

Abstract: This paper introduces new tests of fundamental physics by means of the analysis of disturbances on the GNSS signal propagation. We show how the GNSS signals are sensitive to a space variation of the fine structure constant $α$ in a generic framework of effective scalar field theories beyond the Standard Model. This effective variation may originate from the crossing of the RF signals with dark mat… ▽ More This paper introduces new tests of fundamental physics by means of the analysis of disturbances on the GNSS signal propagation. We show how the GNSS signals are sensitive to a space variation of the fine structure constant $α$ in a generic framework of effective scalar field theories beyond the Standard Model. This effective variation may originate from the crossing of the RF signals with dark matter clumps and/or solitonic structures. At the macroscopic scale, the subsequent disturbances are equivalent to those which occur during the propagation in an inhomogeneous medium. We thus propose an interpretation of the "measure" of the vacuum permeability as a test of fundamental physics. We show the relevance of our approach by a first quantification of the expected signature in a simple model of a variation of $α$ according to a planar geometry. We use a test-bed model of domain walls for that purpose and focus on the measurable time delay in the GNSS signal carrier. △ Less

Submitted 5 February, 2020; originally announced February 2020.

Comments: 15 pages, 6 figures

All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Authors: Léo Bourdet, Louis Hutin, Benoit Bertrand, Andrea Corna, Heorhii Bohuslavskyi, Anthony Amisse, Alessandro Crippa, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bäuerle, Tristan Meunier, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Yann-Michel Niquet, Maud Vinet

Abstract: We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valle… ▽ More We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Comments: arXiv admin note: substantial text overlap with arXiv:1912.09806

Journal ref: IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 11 , Nov. 2018 )

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Authors: L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T. -Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y. -M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet

Abstract: We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent qua… ▽ More We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2019 IEEE International Electron Devices Meeting (IEDM)

Towards scalable silicon quantum computing

Authors: M. Vinet, L. Hutin, B. Bertrand, S. Barraud, J. -M. Hartmann, Y. -J. Kim, V. Mazzocchi, A. Amisse, H. Bohuslavskyi, L. Bourdet, A. Crippa, X. Jehl, R. Maurand, Y. -M. Niquet, M. Sanquer, B. Venitucci, B. Jadot, E. Chanrion, P. -A. Mortemousque, C. Spence, M. Urdampilleta, S. De Franceschi, T. Meunier

Abstract: We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE International Electron Devices Meeting (IEDM)

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Authors: L. Hutin, L. Bourdet, B. Bertrand, A. Corna, H. Bohuslavskyi, A. Amisse, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Franceschi, Y. -M. Niquet, M. Vinet

Abstract: We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected config… ▽ More We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE Symposium on VLSI Technology

A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Authors: Theodor Lundberg, Jing Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quan… ▽ More Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin blockade lifting involving spin states with total spin angular momentum up to $S=3$. More particularly, we report the formation of a hybridized spin quintet state and show triplet-quintet and quintet-septet spin blockade. This enables studies of the quintet relaxation dynamics from which we find $T_1 \sim 4 ~μs$. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energy spectrum of a double quantum dot including the spin-dependent tunnel couplings and the energy splitting between different spin manifolds. Our results open for the possibility of using Si CMOS quantum dots as a tuneable platform for studying high-spin systems. △ Less

Submitted 22 October, 2019; originally announced October 2019.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. X 10, 041010 (2020)

Fast gate-based readout of silicon quantum dots using Josephson parametric amplification

Authors: S. Schaal, I. Ahmed, J. A. Haigh, L. Hutin, B. Bertrand, S. Barraud, M. Vinet, C. -M. Lee, N. Stelmashenko, J. W. A. Robinson, J. Y. Qiu, S. Hacohen-Gourgy, I. Siddiqi, M. F. Gonzalez-Zalba, J. J. L. Morton

Abstract: Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-… ▽ More Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier (JPA), that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio (SNR), we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 $μ$s, well-below the requirements for fault-tolerant readout and 30 times faster than without the JPA. Additionally, the JPA allows operation at a lower RF power while maintaining identical SNR. We determine a noise temperature of 200 mK with a contribution from the JPA (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the read-out speed. △ Less

Submitted 23 July, 2019; v1 submitted 22 July, 2019; originally announced July 2019.

Comments: Wrong figure reference corrected

Journal ref: Phys. Rev. Lett. 124, 067701 (2020)

Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization

Authors: H. Bohuslavskyi, S. Barraud, V. Barral, M. Cassé, L. Le Guevel, L. Hutin, B. Bertrand, A. Crippa, X. Jehl, G. Pillonnet, A. G. M. Jansen, F. Arnaud, P. Galy, R. Maurand, S. De Franceschi, M. Sanquer, M. Vinet

Abstract: Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low te… ▽ More Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low temperature. Then, the same analysis is performed by compensating $V_{TH}$ to a constant, temperature independent value through forward body-biasing (FBB). Energy efficiency optimization is proposed for different supply voltages ($V_{DD}$) in order to find an optimal operating point combining both high RO frequencies and low power dissipation. We show that the Energy-Delay product ($EDP$) can be significantly reduced at low temperature by applying a forward body bias voltage ($V_{FBB}$). We demonstrate that outstanding performance of RO in terms of speed ($τ_P$=37ps) and static power (7nA/stage) can be achieved at 4.3K with $V_{DD}$ reduced down to 0.325V. △ Less

Submitted 14 March, 2019; originally announced March 2019.

Journal ref: IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 9 , Sept. 2018 )

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening

Authors: H. Bohuslavskyi, A. G. M. Jansen, S. Barraud, V. Barral, M. Cassé, L. Le Guevel, X. Jehl, L. Hutin, B. Bertrand, G. Billiot, G. Pillonnet, F. Arnaud, P. Galy, S. De Franceschi, M. Vinet, M. Sanquer

Abstract: In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have reported $SS$(4K or lower) values that are at leas… ▽ More In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have reported $SS$(4K or lower) values that are at least an order of magnitude larger. Here, we present and analyze the saturation of $SS(T)$ in 28nm fully-depleted silicon-on-insulator (FD-SOI) devices for both n- and p-type MOSFETs of different gate oxide thicknesses and gate lengths down to 4K. Until now, the increase of interface-trap density close to the band edge as temperature decreases has been put forward to understand the saturation. Here, an original explanation of the phenomenon is presented by considering a disorder-induced tail in the density of states at the conduction (valence) band edge for the calculation of the MOS channel transport by applying Fermi-Dirac statistics. This results in a subthreshold $I_{D}\sim e^{eV_{GS}/k_BT_0}$ for $T_0=35$K with saturation value $SS(T<T_0) = \ln 10~k_BT_0/e$. The proposed model adequately describes the experimental data of $SS(T)$ from 300 down to 4K using $k_BT_0 \simeq 3$meV for the width of the exponential tail and can also accurately describe $SS(I_{D})$ within the whole subthreshold region. Our analysis allows a direct determination of the technology-dependent band-tail extension forming a crucial element in future compact modeling and design of cryogenic circuits. △ Less

Submitted 13 March, 2019; originally announced March 2019.

Journal ref: IEEE Electron Device Letters, 5 March 2019

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Authors: A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, L. Houtin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand, S. De Franceschi

Abstract: Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using i… ▽ More Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1\,K. △ Less

Submitted 2 July, 2019; v1 submitted 11 November, 2018; originally announced November 2018.

Journal ref: Nature Communications 10, 2776 (2019)

Gate-Based High Fidelity Spin Read-out in a CMOS Device

Authors: Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, 1 Christopher Bäuerle, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier

Abstract: The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary d… ▽ More The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary dot coupled to an electron reservoir to perform readout. This scalable method allows us to read out a spin with a fidelity above 99% for 1 ms integration time. To achieve such fidelity, we exploit a latched spin blockade mechanism that requires electron exchange between the ancillary dot and the reservoir. We show that the demonstrated high read-out fidelity is fully preserved up to 0.5 K. This results holds particular relevance for the future co-integration of spin qubits and classical control electronics. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Comments: 6 pages, 4 figures

Mass Generation in Abelian U(1) Gauge Theories: A Rich Network of Dualities

Authors: Bruno Bertrand, Jan Govaerts

Abstract: Following a novel approach, all known basic mass generation mechanisms consistent with an exact abelian U(1) gauge symmetry are shown to be related through an intricate network of dualities whatever the spacetime dimension. This equivalence which applies in the absence of any supersymmetry, is however restricted by the presence of topological terms generating possible topological effects. In parti… ▽ More Following a novel approach, all known basic mass generation mechanisms consistent with an exact abelian U(1) gauge symmetry are shown to be related through an intricate network of dualities whatever the spacetime dimension. This equivalence which applies in the absence of any supersymmetry, is however restricted by the presence of topological terms generating possible topological effects. In particular in 3+1 dimensions the duality relations between the Maxwell-Higgs model, the Stueckelberg and the topological mass generation mechanisms are then established following a careful treatment of the gauge symmetry content. This result offers a new framework for an effective description of superconductivity or topological defects built from fields beyond the SM. △ Less

Submitted 20 July, 2018; originally announced July 2018.

Comments: 11 pages, 2 figures

Report number: CP3-18-40

99.992 % $^{28}$Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Authors: V. Mazzocchi, P. G. Sennikov, A. D. Bulanov, M. F. Churbanov, B. Bertrand, L. Hutin, J. P. Barnes, M. N. Drozdov, J. M. Hartmann, M. Sanquer

Abstract: Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant $^{28}$silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown $^{28}$silicon epitaxial layers (epilayers) with… ▽ More Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant $^{28}$silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown $^{28}$silicon epitaxial layers (epilayers) with an isotopic purity greater than 99.992 % on 300mm natural abundance silicon crystals. The quality of the mono-crystalline isotopically purified epilayer conforms to the same drastic quality requirements as the natural epilayers used in our pre-industrial CMOS facility. The isotopically purified substrates are now ready for the fabrication of silicon qubits using a state-of-the-art 300 mm Si CMOS-foundries equipment and processes △ Less

Submitted 13 July, 2018; originally announced July 2018.

Comments: 7 pages, 7 figures

Planar Tropical Cubic Curves of Any Genus, and Higher Dimensional Generalisations

Authors: Benoît Bertrand, Erwan Brugallé, Lucía López de Medrano

Abstract: We study the maximal values of Betti numbers of tropical subvarieties of a given dimension and degree in $\mathbb{TP}^n$. We provide a lower estimate for the maximal value of the top Betti number, which naturally depends on the dimension and degree, but also on the codimension. In particular, when the codimension is large enough, this lower estimate is larger than the maximal value of the correspo… ▽ More We study the maximal values of Betti numbers of tropical subvarieties of a given dimension and degree in $\mathbb{TP}^n$. We provide a lower estimate for the maximal value of the top Betti number, which naturally depends on the dimension and degree, but also on the codimension. In particular, when the codimension is large enough, this lower estimate is larger than the maximal value of the corresponding Hodge number of complex algebraic projective varieties of the given dimension and degree. In the case of surfaces, we extend our study to all tropical homology groups. As a special case, we prove that there exist planar tropical cubic curves of genus $g$ for any non-negative integer $g$. △ Less

Submitted 2 April, 2019; v1 submitted 28 July, 2017; originally announced July 2017.

Comments: 31 pages, 9 figures. To be published in L'enseignement mathématique

MSC Class: 14T05(Primary); 14F45 (Primary); 52B20 (Secundary); 52B50 (Secundary)

A linear triple quantum dot system in isolated configuration

Authors: Hanno Flentje, Benoit Bertrand, Pierre-André Mortemousque, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Tristan Meunier

Abstract: The scaling up of electron spin qubit based nanocircuits has remained challenging up to date and involves the development of efficient charge control strategies. Here we report on the experimental realization of a linear triple quantum dot in a regime isolated from the reservoir. We show how this regime can be reached with a fixed number of electrons. Charge stability diagrams of the one, two and… ▽ More The scaling up of electron spin qubit based nanocircuits has remained challenging up to date and involves the development of efficient charge control strategies. Here we report on the experimental realization of a linear triple quantum dot in a regime isolated from the reservoir. We show how this regime can be reached with a fixed number of electrons. Charge stability diagrams of the one, two and three electron configurations where only electron exchange between the dots is allowed are observed. They are modelled with established theory based on a capacitive model of the dot systems. The advantages of the isolated regime with respect to experimental realizations of quantum simulators and qubits are discussed. We envision that the results presented here will make more manipulation schemes for existing qubit implementations possible and will ultimately allow to increase the number of tunnel coupled quantum dots which can be simultaneously controlled. △ Less

Submitted 19 May, 2017; originally announced May 2017.

Haas' theorem revisited

Authors: Benoît Bertrand, Erwan Brugallé, Arthur Renaudineau

Abstract: Haas' theorem describes all partchworkings of a given non-singular plane tropical curve $C$ giving rise to a maximal real algebraic curve. The space of such patchworkings is naturally a linear subspace $W_C$ of the $\mathbb{Z}/2\mathbb{Z}$-vector space $\overrightarrow Π_C$ generated by the bounded edges of $C$, and whose origin is the Harnack patchworking. The aim of this note is to provide an in… ▽ More Haas' theorem describes all partchworkings of a given non-singular plane tropical curve $C$ giving rise to a maximal real algebraic curve. The space of such patchworkings is naturally a linear subspace $W_C$ of the $\mathbb{Z}/2\mathbb{Z}$-vector space $\overrightarrow Π_C$ generated by the bounded edges of $C$, and whose origin is the Harnack patchworking. The aim of this note is to provide an interpretation of affine subspaces of $\overrightarrow Π_C $ parallel to $W_C$. To this purpose, we work in the setting of abstract graphs rather than plane tropical curves. We introduce a topological surface $S_Γ$ above a trivalent graph $Γ$, and consider a suitable affine space $Π_Γ$ of real structures on $S_Γ$ compatible with $Γ$. We characterise $W_Γ$ as the vector subspace of $\overrightarrow Π_Γ$ whose associated involutions induce the same action on $H_1(S_Γ,\mathbb{Z}/2\mathbb{Z})$. We then deduce from this statement another proof of Haas' original result. △ Less

Submitted 30 August, 2017; v1 submitted 7 September, 2016; originally announced September 2016.

Comments: 22 pages, 14 figures

MSC Class: 14P25; 14T05

Journal ref: Épijournal de Géométrie Algébrique, Volume 1 (September 1, 2017) epiga:2030

Injection of a single electron from static to moving quantum dots

Authors: Benoit Bertrand, Sylvain Hermelin, Pierre-André Mortemousque, Shintaro Takada, Michihisa Yamamoto, Seigo Tarucha, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Tristan Meunier

Abstract: We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot created in a long depleted channel with surface acoustic waves (SAWs). We demonstrate that such a process is characterized by an activation law with a threshold that depends on the SAW amplitude and the dot-channel potential gradient. By increasing sufficiently the SAW modulation amplitude, we… ▽ More We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot created in a long depleted channel with surface acoustic waves (SAWs). We demonstrate that such a process is characterized by an activation law with a threshold that depends on the SAW amplitude and the dot-channel potential gradient. By increasing sufficiently the SAW modulation amplitude, we can reach a regime where the transfer is unitary and potentially adiabatic. This study points at the relevant regime to use moving dots in quantum information protocols. △ Less

Submitted 11 January, 2016; originally announced January 2016.

Comments: 5 pages, 4 figures

Fast spin information transfer between distant quantum dots using individual electrons

Authors: B. Bertrand, S. Hermelin, S. Takada, M. Yamamoto, S. Tarucha, A. Ludwig, A. D. Wieck, C. Bäuerle, T. Meunier

Abstract: Transporting ensembles of electrons over long distances without losing their spin polarization is an important benchmark for spintronic devices. It requires usually to inject and to probe spin polarized electrons in conduction channels using ferromagnetic contacts or optical excitation. Parallel to this development, an important effort has been dedicated to the control of nanocircuits at the singl… ▽ More Transporting ensembles of electrons over long distances without losing their spin polarization is an important benchmark for spintronic devices. It requires usually to inject and to probe spin polarized electrons in conduction channels using ferromagnetic contacts or optical excitation. Parallel to this development, an important effort has been dedicated to the control of nanocircuits at the single electron level. The detection and the coherent manipulation of the spin of a single electron trapped in a quantum dot are now well established. Combined with the recent control of the displacement of individual electrons between two distant quantum dots, these achievements permit to envision the realization of spintronic protocols at the single electron level. Here, we demonstrate that spin information carried by one or two electrons can be transferred between two quantum dots separated by a distance of 4 micrometers with a classical fidelity of 65 %. We show that it is presently limited by spin flips occurring during the transfer procedure prior to and after the electron displacement. Being able to encode and control information in the spin degree of freedom of a single electron while being transferred over distances of a few microns on nanosecond timescales paves the way towards "quantum spintronics" devices where large scale spin-based quantum information processing could be implemented. △ Less

Submitted 22 June, 2017; v1 submitted 18 August, 2015; originally announced August 2015.

Comments: 8 pages, 3 figures, supplementary material section

Journal ref: Nature Nanotechnology 11, 672 (2016)

Quantum manipulation of two-electron spin states in metastable double quantum dots

Authors: Benoit Bertrand, Hanno Flentje, Shintaro Takada, Michihisa Yamamoto, Seigo Tarucha, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Tristan Meunier

Abstract: We studied experimentally the dynamics of the exchange interaction between two antiparallel electron spins in a so-called metastable double quantum dot where coupling to the electron reservoirs can be ignored. We demonstrate that the level of control of such a double dot is higher than in conventional double dots. In particular, it allows to couple coherently two electron spins in an efficient man… ▽ More We studied experimentally the dynamics of the exchange interaction between two antiparallel electron spins in a so-called metastable double quantum dot where coupling to the electron reservoirs can be ignored. We demonstrate that the level of control of such a double dot is higher than in conventional double dots. In particular, it allows to couple coherently two electron spins in an efficient manner following a scheme initially proposed by Loss and DiVincenzo. The present study demonstrates that metastable quantum dots are a possible route to increase the number of coherently coupled quantum dots. △ Less

Submitted 25 November, 2014; originally announced November 2014.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 115, 096801 (2015)

On the total curvature of tropical hypersurfaces

Authors: Benoît Bertrand, Lucía López de Medrano, Jean-Jacques Risler

Abstract: This paper studies the curvatures of amoebas and real amoebas (i.e. essentially logarithmic curvatures of the complex and real parts of a real algebraic hypersurface) and of tropical and real tropical hypersurfaces. If V is a tropical hypersurface defined over the field of real Puiseux series, it has a real part RV which is a polyhedral complex. We define the total curvature of V (resp. RV) by u… ▽ More This paper studies the curvatures of amoebas and real amoebas (i.e. essentially logarithmic curvatures of the complex and real parts of a real algebraic hypersurface) and of tropical and real tropical hypersurfaces. If V is a tropical hypersurface defined over the field of real Puiseux series, it has a real part RV which is a polyhedral complex. We define the total curvature of V (resp. RV) by using the total curvature of Amoebas and passing to the limit. We also define the "polyhedral total curvature" of the real part RV of a generic tropical hypersurface. The main results we prove about these notions are the following: - The fact that the total curvature and the polyhedral total curvature coincide for real non-singular tropical hypersurfaces. - A universal inequality between the total curvatures of V and RV and another between the logarithmic curvatures of the real and complex parts of a real algebraic hypersurface. -The fact that this inequality is sharp in the non-singular case. △ Less

Submitted 21 March, 2013; originally announced March 2013.

Comments: 23 pages, 11 figures

High-harmonic transient grating spectroscopy of NO2 electronic relaxation

Authors: H. Ruf, C. Handschin, A. Ferré, N. Thiré, J. B. Bertrand, L. Bonnet, R. Cireasa, E. Constant, P. B. Corkum, D. Descamps, B. Fabre, P. Larregaray, E. Mével, S. Petit, B. Pons, D. Staedter, H. J. Wörner, D. M. Villeneuve, Y. Mairesse, P. Halvick, V. Blanchet

Abstract: We study theoretically and experimentally the electronic relaxation of NO2 molecules excited by absorption of one ~400 nm pump photon. Semi-classical simulations based on trajectory surface hopping calculations are performed. They predict fast oscillations of the electronic character around the intersection of the ground and first excited diabatic states. An experiment based on high-order harmonic… ▽ More We study theoretically and experimentally the electronic relaxation of NO2 molecules excited by absorption of one ~400 nm pump photon. Semi-classical simulations based on trajectory surface hopping calculations are performed. They predict fast oscillations of the electronic character around the intersection of the ground and first excited diabatic states. An experiment based on high-order harmonic transient grating spectroscopy reveals dynamics occuring on the same timescale. A systematic study of the detected transient is conducted to investigate the possible influence of the pump intensity, pump wavelength, and rotational temperature of the molecules. The quantitative agreement between measured and predicted dynamics shows that, in NO2, high harmonic transient grating spectroscopy encodes vibrational dynamics underlying the electronic relaxation. △ Less

Submitted 5 November, 2012; originally announced November 2012.

Comments: The following article has been accepted by Journal of Chemical Physics. After it is published, it will be found at http://jcp.aip.org/

Oriented rotational wave-packet dynamics studies via high harmonic generation

Authors: E. Frumker, C. T. Hebeisen, N. Kajumba, J. B. Bertrand, H. J. Worner, M. Spanner, D. M. Villeneuve, A. Naumov, P. B. Corkum

Abstract: We produce oriented rotational wave packets in CO and measure their characteristics via high harmonic generation. The wavepacket is created using an intense, femtosecond laser pulse and its second harmonic. A delayed 800 nm pulse probes the wave packet, generating even-order high harmonics that arise from the broken symmetry induced by the orientation dynamics. The even-order harmonic radiation th… ▽ More We produce oriented rotational wave packets in CO and measure their characteristics via high harmonic generation. The wavepacket is created using an intense, femtosecond laser pulse and its second harmonic. A delayed 800 nm pulse probes the wave packet, generating even-order high harmonics that arise from the broken symmetry induced by the orientation dynamics. The even-order harmonic radiation that we measure appears on a zero background, enabling us to accurately follow the temporal evolution of the wave packet. Our measurements reveal that, for the conditions optimum for harmonic generation, the orientation is produced by preferential ionization which depletes the sample of molecules of one orientation. △ Less

Submitted 18 May, 2012; originally announced May 2012.

Probing Asymmetric Molecules with High Harmonic Generation. [Original manuscript as prepared on 22/05/2011]

Authors: E. Frumker, N. Kajumba, J. B. Bertrand, H. J. Worner, C. T. Hebeisen, P. Hockett, M. Spanner, S. Patchkovskii, G. G. Paulus, D. M. Villeneuve, P. B. Corkum

Abstract: Asymmetric molecules look different when viewed from one side or the other. This difference influences the electronic structure of the valence electrons, thereby giving stereo sensitivity to chemistry and biology. We show that attosecond and re-collision science provides a detailed and sensitive probe of electronic asymmetry. On each 1/2 cycle of an intense light pulse, laser-induced tunnelling ex… ▽ More Asymmetric molecules look different when viewed from one side or the other. This difference influences the electronic structure of the valence electrons, thereby giving stereo sensitivity to chemistry and biology. We show that attosecond and re-collision science provides a detailed and sensitive probe of electronic asymmetry. On each 1/2 cycle of an intense light pulse, laser-induced tunnelling extracts an electron wave packet from the molecule. When the electron wave packet recombines, alternately from one side of the molecule or the other, its amplitude and phase asymmetry determines the even and odd harmonics radiation that it generates. This harmonic spectrum encodes three manifestations of asymmetry; an amplitude and phase asymmetry in electron tunneling; an asymmetry in the phase that the electron wave packet accumulates relative to the ion between the moment of ionization and recombination; and an asymmetry in the amplitude and phase of the transition moment. We report the first measurement of high harmonics from oriented gas samples. We determine the phase asymmetry of the attosecond XUV pulses emitted when an electron recollides from opposite sides of the CO molecule, and the phase asymmetry of the recollision electron just before recombination. We discuss how the various contributions to asymmetry can be isolated in future experiments. △ Less

Submitted 18 May, 2012; originally announced May 2012.

Comments: Contains SOM