Showing 1–11 of 11 results for author: Belli, M

Giant spin-charge conversion in ultrathin films of the MnPtSb half-Heusler compound

Authors: E. Longo, A. Markou, C. Felser, M. Belli, A. Serafini, P. Targa, D. Codegoni, M. Fanciulli, R. Mantovan

Abstract: Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of magnetization in energy-efficient spintronic devices. In this work, we report the spin-to-charge conversion in sputtered ultrathin films of the half-Heusler compou… ▽ More Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of magnetization in energy-efficient spintronic devices. In this work, we report the spin-to-charge conversion in sputtered ultrathin films of the half-Heusler compound MnPtSb with thickness (t) in the range from 1 to 6 nm. A combination of X-ray and transmission electron microscopy measurements evidence the epitaxial nature of these ultrathin non-centrosymmetric MnPtSb films, with a clear (111)-orientation obtained on top of (0001) single-crystal sapphire substrates. The study of the thickness (t)-dependent magnetization dynamics of the MnPtSb(t)/Co(5nm)/Au(5nm) heterostructure revealed that the MnPtSb compound can be used as an efficient spin current generator, even at film thicknesses as low as 1 nm. By making use of spin pumping FMR, we measure a remarkable t-dependent spin-charge conversion in the MnPtSb layers, which clearly demonstrate the interfacial origin of the conversion. When interpreted as arising from the inverse Edelstein effect (IEE), the spin-charge conversion efficiency extracted at room temperature for the thinnest MnPtSb layer reaches λIEE~3 nm, representing an extremely high spin-charge conversion efficiency at room temperature. The still never explored ultrathin regime of the MnPtSb films studied in this work and the discover of their outstanding functionality are two ingredients which demonstrate the potentiality of such materials for future applications in spintronics. △ Less

Submitted 26 July, 2023; originally announced July 2023.

Comments: main text: 17 pages (with 4 figures), plus additional 8 pages of Supplementary Information

Journal ref: Adv. Funct. Mater. 2024, 2407968

Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon

Authors: Emanuele Longo, Matteo Belli, Mario Alia, Martino Rimoldi, Raimondo Cecchini, Massimo Longo, Claudia Wiemer, Lorenzo Locatelli, Gianluca Gubbiotti, Marco Fanciulli, Roberto Mantovan

Abstract: Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2T… ▽ More Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4 inches Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length λIEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: Main text: 28 pages, 5 figures and 2 tables. Supplementary information are also included in the file with additional 12 pages

Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO$_2$ interface

Authors: M. Belli, M. Fanciulli, R. de Sousa

Abstract: The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so called "boson peak" in neutron and optical spectroscopy. These same modes manifest themselves as two level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here we present an experiment that uses the spin relaxation of dangling bonds at the S… ▽ More The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so called "boson peak" in neutron and optical spectroscopy. These same modes manifest themselves as two level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here we present an experiment that uses the spin relaxation of dangling bonds at the Si/(amorphous)SiO$_2$ interface as a probe of TLSs. We introduce a model that is able to explain the observed non-exponential electron spin inversion recovery and provides a measure of the degree of spatial localization and concentration of the TLSs close to the interface, their maximum energy and its temperature dependence. △ Less

Submitted 24 April, 2020; v1 submitted 3 April, 2019; originally announced April 2019.

Comments: 4 pages, 2 figures, regular paper

Journal ref: Phys. Rev. Research 2, 033507 (2020)

Linear Accelerator Test Facility at LNF Conceptual Design Report

Authors: Paolo Valente, Maurizio Belli, Bruno Bolli, Bruno Buonomo, Sergio Cantarella, Riccardo Ceccarelli, Alberto Cecchinelli, Oreste Cerafogli, Renato Clementi, Claudio Di Giulio, Adolfo Esposito, Oscar Frasciello, Luca Foggetta, Andrea Ghigo, Simona Incremona, Franco Iungo, Roberto Mascio, Stefano Martelli, Graziano Piermarini, Lucia Sabbatini, Franco Sardone, Giancarlo Sensolini, Ruggero Ricci, Luis Antonio Rossi, Ugo Rotundo , et al. (3 additional authors not shown)

Abstract: Test beam and irradiation facilities are the key enabling infrastructures for research in high energy physics (HEP) and astro-particles. In the last 11 years the Beam-Test Facility (BTF) of the DAΦNE accelerator complex in the Frascati laboratory has gained an important role in the European infrastructures devoted to the development and testing of particle detectors. At the same time the BTF opera… ▽ More Test beam and irradiation facilities are the key enabling infrastructures for research in high energy physics (HEP) and astro-particles. In the last 11 years the Beam-Test Facility (BTF) of the DAΦNE accelerator complex in the Frascati laboratory has gained an important role in the European infrastructures devoted to the development and testing of particle detectors. At the same time the BTF operation has been largely shadowed, in terms of resources, by the running of the DAΦNE electron-positron collider. The present proposal is aimed at improving the present performance of the facility from two different points of view: extending the range of application for the LINAC beam extracted to the BTF lines, in particular in the (in some sense opposite) directions of hosting fundamental physics and providing electron irradiation also for industrial users; extending the life of the LINAC beyond or independently from its use as injector of the DAΦNE collider, as it is also a key element of the electron/positron beam facility. The main lines of these two developments can be identified as: consolidation of the LINAC infrastructure, in order to guarantee a stable operation in the longer term; upgrade of the LINAC energy, in order to increase the facility capability (especially for the almost unique extracted positron beam); doubling of the BTF beam-lines, in order to cope with the signicant increase of users due to the much wider range of applications. △ Less

Submitted 17 March, 2016; originally announced March 2016.

Comments: 71 pages

Report number: INFN-16-04/LNF

Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon

Authors: G. Mazzeo, E. Prati, M. Belli, G. Leti, S. Cocco, M. Fanciulli, F. Guagliardo, G. Ferrari

Abstract: We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magneti… ▽ More We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magnetic field independent tunneling time is measured. We measure the statistics of the transfer of electrons observed when the ground state D0 of the donor is aligned with the SET states. △ Less

Submitted 23 March, 2012; originally announced March 2012.

Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

Authors: Enrico Prati, Marco De Michielis, Matteo Belli, Simone Cocco, Marco Fanciulli, Dharmraj Kotekar-Patil, Matthias Ruoff, Dieter P. Kern, David A. Wharam, Arjan Verduijn, Giuseppe Tettamanzi, Sven Rogge, Benoit Roche, Romain Wacquez, Xavier Jehl, Maud Vinet, Marc Sanquer

Abstract: We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electr… ▽ More We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices. △ Less

Submitted 20 March, 2012; originally announced March 2012.

Comments: 4 Figures

Adiabatic Charge Control in a Single Donor Atom Transistor

Authors: Enrico Prati, Matteo Belli, Simone Cocco, Guido Petretto, Marco Fanciulli

Abstract: We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect transistor. The different coupling capacitances of the donor and the quantum dot with the control and the back gates are exploited to generate a relative rigid shift of… ▽ More We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect transistor. The different coupling capacitances of the donor and the quantum dot with the control and the back gates are exploited to generate a relative rigid shift of their energy spectrum as a function of the back gate voltage, causing the crossing of the energy levels. We observe the sequential tunneling through the $D^{2-}$ and the $D^{3-}$ energy levels of the donor hybridized at the oxide interface at 4.2 K. Their respective states form an honeycomb pattern with the quantum dot states. It is therefore possible to control the exchange coupling of an electron of the quantum dot with the electrons bound to the donor, thus realizing a physical qubit for quantum information processing applications. △ Less

Submitted 10 August, 2010; v1 submitted 18 May, 2010; originally announced June 2010.

Comments: 12 pages, 5 figures

Compact silicon double and triple dots realized with only two gates

Authors: Mathieu Pierre, Romain Wacquez, Benoit Roche, Xavier Jehl, Marc Sanquer, Maud Vinet, Enrico Prati, Matteo Belli, Marco Fanciulli

Abstract: We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The m… ▽ More We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted. △ Less

Submitted 31 May, 2010; originally announced May 2010.

Comments: 3 pages, 4 figures

Journal ref: Applied Physics Letters 95, 242107 (2009)

Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics

Authors: Enrico Prati, Matteo Belli, Marco Fanciulli, Giorgio Ferrari

Abstract: We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and emission of an electron in a point defect close to the interface. Contrarily to previous reports, we show that the capture and emission by point defects in S… ▽ More We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and emission of an electron in a point defect close to the interface. Contrarily to previous reports, we show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical ensemble model applies, the time domain charge fluctuation in the defect is used to determine the temperature of the few electron gas in the channel. △ Less

Submitted 4 February, 2010; v1 submitted 29 January, 2010; originally announced February 2010.

Comments: 4 Figures (color)

Recovering Metallicity in A4C60: The Case of Monomeric Li4C60

Authors: M. Riccò, M. Belli, D. Pontiroli, M. Mazzani, T. Shiroka, D. Arcon, A. Zorko, S. Margadonna, G. Ruani

Abstract: The restoration of metallicity in the high-temperature, cubic phase of Li4C60 represents a remarkable feature for a member of the A4C60 family (A = alkali metal), invariably found to be insulators. Structural and resonance technique investigations on Li4C60 at T > 600 K, show that its fcc structure is associated with a complete (4e) charge transfer to C60 and a sparsely populated Fermi level. Th… ▽ More The restoration of metallicity in the high-temperature, cubic phase of Li4C60 represents a remarkable feature for a member of the A4C60 family (A = alkali metal), invariably found to be insulators. Structural and resonance technique investigations on Li4C60 at T > 600 K, show that its fcc structure is associated with a complete (4e) charge transfer to C60 and a sparsely populated Fermi level. These findings not only emphasize the crucial role played by lattice symmetry in fulleride transport properties, but also re-dimension the role of Jahn-Teller effects in band structure determination. Moreover, they suggest the present system as a potential precursor to a new class of superconducting fullerides. △ Less

Submitted 15 January, 2007; originally announced January 2007.

Comments: 4 pages, 3 figures

Unusual polymerization in the Li4C60 fulleride

Authors: M. Ricco, T. Shiroka, M. Belli, D. Pontiroli, M. Pagliari, G. Ruani, D. Palles, S. Margadonna, M. Tomaselli

Abstract: Li4C60, one of the best representatives of lithium intercalated fullerides, features a novel type of 2D polymerization. Extensive investigations, including laboratory x-ray and synchrotron radiation diffraction, 13C NMR, MAS and Raman spectroscopy, show a monoclinic I2/m structure, characterized by chains of [2+2]-cycloaddicted fullerenes, sideways connected by single C-C bonds. This leads to th… ▽ More Li4C60, one of the best representatives of lithium intercalated fullerides, features a novel type of 2D polymerization. Extensive investigations, including laboratory x-ray and synchrotron radiation diffraction, 13C NMR, MAS and Raman spectroscopy, show a monoclinic I2/m structure, characterized by chains of [2+2]-cycloaddicted fullerenes, sideways connected by single C-C bonds. This leads to the formation of polymeric layers, whose insulating nature, deduced from the NMR and Raman spectra, denotes the complete localization of the electrons involved in the covalent bonds. △ Less

Submitted 20 September, 2005; originally announced September 2005.

Comments: 7 pages, 6 figures, RevTex4, submitted to Phys. Rev. B

Journal ref: Physical Review B 72, 155437 (2005)