Showing 1–1 of 1 results for author: Beam, E
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Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density
Authors:
Zhanbo Xia,
Chandan Joishi,
Shahadat H. Sohel,
Andy Xie,
Edward Beam,
Yu Cao,
Siddharth Rajan
Abstract:
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN base region, while the majority carrier holes for base current are injected from thick p-GaN regions adjacent to the thin p-GaN base. The design is realized usin…
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We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN base region, while the majority carrier holes for base current are injected from thick p-GaN regions adjacent to the thin p-GaN base. The design is realized using a regrowth emitter approach with SiO$_2$ as a spacer between the emitter layer and the thick p-GaN base contact regions. The fabricated device demonstrated state-of-art output current density (I$_{C, max}$) ~275 kA/cm$^2$ with a current gain ($β$) of 9, and 17 for the planar HBT design (I$_{C, max}$ =150 kA/cm$^2$). The reported results highlight the potential of the selective injection design to overcome the persistent GaN HBT design tradeoff between base resistance and current gain, paving the way for next-generation radio frequency and mm-Wave applications.
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Submitted 26 August, 2024;
originally announced August 2024.