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Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithography Pattering Method
Authors:
Alessandro Paghi,
Sebastiano Battisti,
Simone Tortorella,
Giorgio De Simoni,
Francesco Giazotto
Abstract:
Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated Al2O3 and HfO2 layers via Atomic Layer Deposition…
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Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated Al2O3 and HfO2 layers via Atomic Layer Deposition (ALD) and we extrapolated relative permittivity (k) and dielectric strength (EBD) from AC (100 Hz to 100 kHz) and DC measurements on metal-insulator-metal capacitors. Our findings reveal a strong dependence of HfO2 cryogenic performance on the ALD growth temperature, while the latter shows a negligible impact on Al2O3. We estimated a ~9 % and ~14 % reduction of the relative permittivity of HfO2 and Al2O3, respectively, from 300 K to 3 K. Additionally, we designed and fabricated Al2O3/HfO2 bilayers and we checked their properties at cryogenic temperatures. The study also investigates the impact of the patterning method, namely, UV or electron-beam lithography (acceleration voltage of 10, 20, or 30 kV), on the high-k dielectric properties.
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Submitted 5 July, 2024;
originally announced July 2024.
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Extremely weak sub-kelvin electron-phonon coupling in InAs On Insulator
Authors:
Sebastiano Battisti,
Giorgio De Simoni,
Alessandro Braggio,
Alessandro Paghi,
Lucia Sorba,
Francesco Giazotto
Abstract:
We are proposing a hybrid superconductor-semiconductor platform using indium arsenide (InAs) grown on an insulating layer of indium aluminum arsenide (InAlAs) heterostructure (InAsOI) as an ideal candidate for coherent caloritronic devices. These devices aim to heat or cool electrons out of equilibrium with respect to the phonon degree of freedom. However, their performances are usually limited by…
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We are proposing a hybrid superconductor-semiconductor platform using indium arsenide (InAs) grown on an insulating layer of indium aluminum arsenide (InAlAs) heterostructure (InAsOI) as an ideal candidate for coherent caloritronic devices. These devices aim to heat or cool electrons out of equilibrium with respect to the phonon degree of freedom. However, their performances are usually limited by the strength of the electron-phonon (e-ph) coupling and the associated power loss. Our work discusses the advantages of the InAsOI platform, which are based on the significantly low e-ph coupling measured compared to all-metallic state-of-the-art caloritronic devices. Our structure demonstrates values of the e-ph coupling constant up to two orders of magnitude smaller than typical values in metallic structures.
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Submitted 21 June, 2024;
originally announced June 2024.
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Demonstration of high-impedance superconducting NbRe Dayem bridges
Authors:
S. Battisti,
J. Koch,
A. Paghi,
L. Ruf,
A. Gulian,
S. Teknowijoyo,
C. Cirillo,
Z. Makhdoumi Kakhaki,
C. Attanasio,
E. Scheer,
A. Di Bernardo,
G. De Simoni,
F. Giazotto
Abstract:
Here we demonstrate superconducting Dayem-bridge weak-links made of different stoichiometric compositions of NbRe. Our devices possess a relatively high critical temperature, normal-state resistance, and kinetic inductance. In particular, the high kinetic inductance makes this material a good alternative to more conventional niobium-based superconductors (e.g., NbN or NbTiN) for the realization of…
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Here we demonstrate superconducting Dayem-bridge weak-links made of different stoichiometric compositions of NbRe. Our devices possess a relatively high critical temperature, normal-state resistance, and kinetic inductance. In particular, the high kinetic inductance makes this material a good alternative to more conventional niobium-based superconductors (e.g., NbN or NbTiN) for the realization of superinductors and high-quality factor resonators, whereas the high normal-state resistance yields a large output voltage in superconducting switches and logic elements realized upon this compound. Moreover, out-of-plane critical magnetic fields exceeding 2 T ensure that possible applications requiring high magnetic fields can also be envisaged. Altogether, these features make this material appealing for a number of applications in the framework of quantum technologies.
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Submitted 15 May, 2024; v1 submitted 7 December, 2023;
originally announced December 2023.
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Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium
Authors:
Jennifer Koch,
Carla Cirillo,
Sebastiano Battisti,
Leon Ruf,
Zahra Makhdoumi Kakhaki,
Alessandro Paghi,
Armen Gulian,
Serafim Teknowijoyo,
Giorgio De Simoni,
Francesco Giazotto,
Carmine Attanasio,
Elke Scheer,
Angelo Di Bernardo
Abstract:
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS mu…
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The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS must be identified. Top-down fabrication protocols should be also optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor NbRe. Unlike other devices previously reported, our NbRe devices systematically exhibit GCS, when made in specific conditions, which paves the way for higher device scalability. Our results also suggest that surface properties of NbRe nanobridges and their modification during fabrication are key for GCS.
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Submitted 7 December, 2023;
originally announced December 2023.
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Bipolar thermoelectric superconducting single-electron transistor
Authors:
Sebastiano Battisti,
Giorgio De Simoni,
Luca Chirolli,
Alessandro Braggio,
Francesco Giazotto
Abstract:
Thermoelectric effects in normal metals and superconductors are usually very small due to the presence of electron-hole symmetry. Here, we show that superconducting junctions brought out of equilibrium manifest a sizable bipolar thermoelectric effect that stems from a strong violation of the detailed balance. To fully control the effect, we consider a thermally biased SIS'IS junction where the cap…
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Thermoelectric effects in normal metals and superconductors are usually very small due to the presence of electron-hole symmetry. Here, we show that superconducting junctions brought out of equilibrium manifest a sizable bipolar thermoelectric effect that stems from a strong violation of the detailed balance. To fully control the effect, we consider a thermally biased SIS'IS junction where the capacitance of the central S' region is small enough to establish a Coulomb blockade regime. By exploiting charging effects we are able to tune the Seebeck voltage, the thermocurrent, and thereby the power output of this structure, via an external gate. We then analyse the main figures of merit of bipolar thermoelectricity and we prospect for possible applications.
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Submitted 23 May, 2023;
originally announced May 2023.
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Gate-control of the current-flux relation of a Josephson quantum interferometer based on proximitized metallic nanojuntions
Authors:
Giorgio De Simoni,
Sebastiano Battisti,
Nadia Ligato,
Maria Teresa Mercaldo,
Mario Cuoco,
Francesco Giazotto
Abstract:
We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximitized Cu mesoscopic weak-links. The latter behave analogously to genuine superconducting metals in terms of the response to electrostatic gating, and provide a good performance in terms of current-modulation visibility. We show that, through the applicati…
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We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximitized Cu mesoscopic weak-links. The latter behave analogously to genuine superconducting metals in terms of the response to electrostatic gating, and provide a good performance in terms of current-modulation visibility. We show that, through the application of a static gate voltage, we are able to modify the interferometer current-flux relation in a fashion which seems compatible with the introduction of $π$-channels within the gated weak-link. Our results suggest that the microscopic mechanism at the origin of the suppression of the switching current in the interferometer is apparently phase coherent, resulting in an overall damping of the superconducting phase rigidity. We finally tackle the performance of the interferometer in terms of responsivity to magnetic flux variations in the dissipative regime, and discuss the practical relevance of gated proximity-based all-metallic SQUIDs for magnetometry at the nanoscale.
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Submitted 8 June, 2021; v1 submitted 7 June, 2021;
originally announced June 2021.
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Autonomous Shuttle-as-a-Service (ASaaS): Challenges, Opportunities, and Social Implications
Authors:
Antonio Bucchiarone,
Sandro Battisti,
Annapaola Marconi,
Roberto Maldacea,
Diego Cardona Ponce
Abstract:
Modern cities are composed of complex socio-technical systems that exist to provide services effectively to their residents and visitors. In this context, smart mobility systems aim to support the efficient exploitation of the city transport facilities as well as sustainable mobility within the urban environment. People need to travel quickly and conveniently between locations at different scales,…
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Modern cities are composed of complex socio-technical systems that exist to provide services effectively to their residents and visitors. In this context, smart mobility systems aim to support the efficient exploitation of the city transport facilities as well as sustainable mobility within the urban environment. People need to travel quickly and conveniently between locations at different scales, ranging from a trip of a few blocks within a city to a journey across cities or further. At the same time, goods need to be timely delivered considering the needs of both the users and the businesses. While most of the mobility and delivery solutions can cover significant distances and multiple requests, they suffer when the requests come from the growing neighborhoods and hard-to-reach areas such as city centers, corporate headquarters, and hospitals. In the last few years, several cities indicated interest in using Autonomous Vehicles (AV) for the "last-mile" mobility services. With them, it seems to be easier to get people and goods around using fewer vehicles. In this context, Autonomous Shuttles (AS) are beginning to be thought of as a new mobility/delivery service into the city center where narrow streets are not easily served by traditional buses. They allow them to serve critical areas with minimal new infrastructure and reducing noise and pollution. The goal of this article is to present an innovative vision on the introduction of the Autonomous Shuttles-as-a service (ASaaS) concept as the key pillar for the realization of innovative and sustainable proximity mobility. Through a set of real application scenarios, we present our view, and we discuss a set of challenges, opportunities, and social implications that this way to reimage the mobility of the future introduces.
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Submitted 14 January, 2020;
originally announced January 2020.
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Climate Engineering Responses to Climate Emergencies
Authors:
J. J. Blackstock,
D. S. Battisti,
K. Caldeira,
D. M. Eardley,
J. I. Katz,
D. W. Keith,
A. A. N. Patrinos,
D. P. Schrag,
R. H. Socolow,
S. E. Koonin
Abstract:
Despite efforts to stabilize CO_2 concentrations, it is possible that the climate system could respond abruptly with catastrophic consequences. Intentional intervention in the climate system to avoid or ameliorate such consequences has been proposed as one possible response, should such a scenario arise. In a one-week study, the authors of this report conducted a technical review and evaluation…
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Despite efforts to stabilize CO_2 concentrations, it is possible that the climate system could respond abruptly with catastrophic consequences. Intentional intervention in the climate system to avoid or ameliorate such consequences has been proposed as one possible response, should such a scenario arise. In a one-week study, the authors of this report conducted a technical review and evaluation of proposed climate engineering concepts that might serve as a rapid palliative response to such climate emergency scenarios.
Because of their potential to induce a prompt (less than one year) global cooling, this study concentrated on Shortwave Climate Engineering (SWCE) methods for moderately reducing the amount of shortwave solar radiation reaching the Earth. The study's main objective was to outline a decade-long agenda of technical research that would maximally reduce the uncertainty surrounding the benefits and risks associated with SWCE. For rigor of technical analysis, the study focused the research agenda on one particular SWCE concept--stratospheric aerosol injection--and in doing so developed several conceptual frameworks and methods valuable for assessing any SWCE proposal.
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Submitted 31 July, 2009; v1 submitted 29 July, 2009;
originally announced July 2009.
