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Characterizing and modeling the influence of geometry on the performance of superconducting nanowire cryotrons
Authors:
Alejandro Simon,
Reed Foster,
Owen Medeiros,
Matteo Castellani,
Emma Batson,
Karl K. Berggren
Abstract:
The scaling of superconducting nanowire-based devices to larger arrays is often limited by the cabling required to interface with each device. Cryogenic integrated circuits constructed from nanowire cryotrons, or nanocryotrons, can address this limitation by performing signal processing on chip. In this study, we characterize key performance metrics of the nanocryotron to elucidate its potential a…
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The scaling of superconducting nanowire-based devices to larger arrays is often limited by the cabling required to interface with each device. Cryogenic integrated circuits constructed from nanowire cryotrons, or nanocryotrons, can address this limitation by performing signal processing on chip. In this study, we characterize key performance metrics of the nanocryotron to elucidate its potential as a logical element in cryogenic integrated circuits and develop an electro-thermal model to connect material parameters with device performance. We find that the performance of the nanocryotron depends significantly on the device geometry, and trade-offs are associated with optimizing the gain, jitter, and energy dissipation. We demonstrate that nanocryotrons fabricated on niobium nitride can achieve a grey zone less than 210 nA wide for a 5 ns long input pulse corresponding to a maximum achievable gain of 48 dB, an energy dissipation of less than 20 aJ per operation, and a jitter of less than 60 ps.
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Submitted 25 September, 2024;
originally announced September 2024.
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Coherent control of a superconducting qubit using light
Authors:
Hana K. Warner,
Jeffrey Holzgrafe,
Beatriz Yankelevich,
David Barton,
Stefano Poletto,
C. J. Xin,
Neil Sinclair,
Di Zhu,
Eyob Sete,
Brandon Langley,
Emma Batson,
Marco Colangelo,
Amirhassan Shams-Ansari,
Graham Joe,
Karl K. Berggren,
Liang Jiang,
Matthew Reagor,
Marko Loncar
Abstract:
Quantum science and technology promise the realization of a powerful computational resource that relies on a network of quantum processors connected with low loss and low noise communication channels capable of distributing entangled states [1,2]. While superconducting microwave qubits (3-8 GHz) operating in cryogenic environments have emerged as promising candidates for quantum processor nodes du…
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Quantum science and technology promise the realization of a powerful computational resource that relies on a network of quantum processors connected with low loss and low noise communication channels capable of distributing entangled states [1,2]. While superconducting microwave qubits (3-8 GHz) operating in cryogenic environments have emerged as promising candidates for quantum processor nodes due to their strong Josephson nonlinearity and low loss [3], the information between spatially separated processor nodes will likely be carried at room temperature via telecommunication photons (200 THz) propagating in low loss optical fibers. Transduction of quantum information [4-10] between these disparate frequencies is therefore critical to leverage the advantages of each platform by interfacing quantum resources. Here, we demonstrate coherent optical control of a superconducting qubit. We achieve this by developing a microwave-optical quantum transducer that operates with up to 1.18% conversion efficiency (1.16% cooperativity) and demonstrate optically-driven Rabi oscillations (2.27 MHz) in a superconducting qubit without impacting qubit coherence times (800 ns). Finally, we discuss outlooks towards using the transducer to network quantum processor nodes.
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Submitted 30 October, 2023; v1 submitted 24 October, 2023;
originally announced October 2023.
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Single-photon detection using large-scale high-temperature MgB$_2$ sensors at 20 K
Authors:
I. Charaev,
E. K. Batson,
S. Cherednichenko,
K. Reidy,
V. Drakinskiy,
Y. Yu,
S. Lara-Avila,
J. D. Thomsen,
M. Colangelo,
F. Incalza,
K. Ilin,
A. Schilling,
K. K. Berggren
Abstract:
Ultra-fast single-photon detectors with high current density and operating temperature can benefit space and ground applications, including quantum optical communication systems, lightweight cryogenics for space crafts, and medical use. Here we demonstrate magnesium diboride (MgB$_2$) thin-film superconducting microwires capable of single-photon detection at 1.55 $μ$m optical wavelength. We used h…
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Ultra-fast single-photon detectors with high current density and operating temperature can benefit space and ground applications, including quantum optical communication systems, lightweight cryogenics for space crafts, and medical use. Here we demonstrate magnesium diboride (MgB$_2$) thin-film superconducting microwires capable of single-photon detection at 1.55 $μ$m optical wavelength. We used helium ions to alter the properties of MgB$_2$, resulting in microwire-based detectors exhibiting single-photon sensitivity across a broad temperature range of up to 20 K, and detection efficiency saturation for 1 $μ$m wide microwires at 3.7 K. Linearity of detection rate vs incident power was preserved up to at least ~100 Mcps. Despite the large active area of up to 400$\times$400 $μ$m$^2$, the reset time was found to be as low as $\sim1$ ns. Our research provides new possibilities for breaking the operating temperature limit and maximum single-pixel count rate, expanding the detector area, and raises inquiries about the fundamental mechanisms of single-photon detection in high-critical-temperature superconductors.
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Submitted 29 August, 2023;
originally announced August 2023.
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Wafer-Scale MgB2 Superconducting Devices
Authors:
Changsub Kim,
Christina Bell,
Jake Evans,
Jonathan Greenfield,
Emma Batson,
Karl Berggren,
Nathan Lewis,
Daniel Cunnane
Abstract:
Progress in superconducting device and detector technologies over the past decade have realized practical applications in quantum computers, detectors for far-infrared telescopes, and optical communications. Superconducting thin film materials, however, have remained largely unchanged, with aluminum still being the material of choice for superconducting qubits, and niobium compounds for high frequ…
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Progress in superconducting device and detector technologies over the past decade have realized practical applications in quantum computers, detectors for far-infrared telescopes, and optical communications. Superconducting thin film materials, however, have remained largely unchanged, with aluminum still being the material of choice for superconducting qubits, and niobium compounds for high frequency/high kinetic inductance devices. Magnesium diboride ($\mathrm{MgB}_2$), known for its highest transition temperature ($\mathrm{T}_c$ = 39 K) among metallic superconductors, is a viable material for elevated temperature and higher frequency superconducting devices moving towards THz frequencies. However, difficulty in synthesizing wafer-scale thin films have prevented implementation of $\mathrm{MgB}_2$ devices into the application base of superconducting electronics. Here, we report ultra-smooth (< 0.5 nm root-mean-square roughness) and uniform $\mathrm{MgB}_2$ thin (< 100 nm) films over 100 mm in diameter for the first time and present prototype devices fabricated with these films demonstrating key superconducting properties including internal quality factor over $\mathrm{10}^4$ at 4.5 K and high tunable kinetic inductance in the order of tens of pH/sq in a 40 nm film. This groundbreaking advancement will enable development of elevated temperature, high frequency superconducting quantum circuits and devices.
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Submitted 21 December, 2023; v1 submitted 24 May, 2023;
originally announced May 2023.
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Reduced ITO for Transparent Superconducting Electronics
Authors:
Emma Batson,
Marco Colangelo,
John Simonaitis,
Eyosias Gebremeskel,
Owen Medeiros,
Mayuran Saravanapavanantham,
Vladimir Bulovic,
P. Donald Keathley,
Karl K. Berggren
Abstract:
Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhe…
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Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhere in the system. In this paper we investigated reduced indium tin oxide (ITO) as a potential transparent superconductor for electronics. We fabricated and characterized superconducting wires of reduced indium tin oxide. We also showed that a $\SI{10}{nm}$ thick film of the material would only absorb about 1 - 20\% of light between 500 - 1700 nm.
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Submitted 16 December, 2022;
originally announced December 2022.
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Simultaneous imaging of dopants and free charge carriers by STEM-EELS
Authors:
Hongbin Yang,
Andrea Konečná,
Xianghan Xu,
Sang-Wook Cheong,
Philip E. Batson,
F. Javier García de Abajo,
Eric Garfunkel
Abstract:
Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with high-enough spatial and spectral resolution. Here, we demonstrate nanoscale imaging of both dopants and free charge carriers in La-doped BaSnO3 (BLSO) using high-resolution electron energy-loss spectroscopy (EELS). By anal…
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Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with high-enough spatial and spectral resolution. Here, we demonstrate nanoscale imaging of both dopants and free charge carriers in La-doped BaSnO3 (BLSO) using high-resolution electron energy-loss spectroscopy (EELS). By analyzing both high- and low-energy excitations in EELS, we reveal chemical and electronic inhomogeneities within a single BLSO nanocrystal. The inhomogeneous doping leads to distinctive localized infrared surface plasmons, including a novel plasmon mode that is highly confined between high- and low-doping regions. We further quantify the carrier density, effective mass, and dopant activation percentage from EELS data and transport measurements on the bulk single crystals of BLSO. These results represent a unique way of studying heterogeneities in solids, understanding structure-property relationships at the nanoscale, and opening the way to leveraging nanoscale doping texture in the design of nanophotonic devices.
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Submitted 14 July, 2022;
originally announced July 2022.
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Electronic structure of Humble defects in Ge and Ge$_{0.8}$Si$_{0.2}$
Authors:
Shang Ren,
Hongbin Yang,
Sobhit Singh,
Philip E. Batson,
Eric L. Garfunkel,
David Vanderbilt
Abstract:
The group-IV diamond-structure elements are known to host a variety of planar defects, including {001} planar defects in C and {001}, {111} and {113} planar defects in Si and Ge. Among the {001} planar defects, the Humble defect, known for some time to occur in Ge, has recently also been observed in Si/Ge alloys, but the details of its electronic structure remain poorly understood. Here we perform…
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The group-IV diamond-structure elements are known to host a variety of planar defects, including {001} planar defects in C and {001}, {111} and {113} planar defects in Si and Ge. Among the {001} planar defects, the Humble defect, known for some time to occur in Ge, has recently also been observed in Si/Ge alloys, but the details of its electronic structure remain poorly understood. Here we perform first-principles density functional calculations to study Humble defects in both Ge and Ge$_{0.8}$Si$_{0.2}$. We also measure the Si L$_{2,3}$-edge electron energy loss spectra both at the defect and in a bulk-like region far from the defect, and compare with theoretical calculations on corresponding Si sites in our first-principles calculations. We find that inclusion of core-hole effects in the theory is essential for reproducing the observed L$_{2,3}$ edge spectra, and that once they are included, the results provide a set of fingerprints for different types of local atomic bonding environments in Ge$_{0.8}$Si$_{0.2}$. Our first-principles calculations reveal that the Humble defects have a tendency to enlarge the electronic band gap, which may have potential uses in band engineering. The use of hybrid functionals for an improved description of the band gap in these systems is also discussed.
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Submitted 27 June, 2022;
originally announced June 2022.
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Synthesis of an aqueous, air-stable, superconducting 1T'-WS$_2$ monolayer-ink
Authors:
Xiaoyu Song,
Ratnadwip Singha,
Guangming Cheng,
Yao-Wen Yeh,
Franziska Kamm,
Jason F. Khoury,
Florian Pielnhofer,
Philip E. Batson,
Nan Yao,
Leslie M. Schoop
Abstract:
Liquid-phase chemical exfoliation is ideal to achieve industry scale production of two-dimensional (2D) materials for a wide range of application such as printable electronics, catalysis and energy storage. However, many impactful 2D materials with potentials in quantum technologies can only be studied in lab settings due to their air-sensitivity, and loss of physical performance after chemical pr…
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Liquid-phase chemical exfoliation is ideal to achieve industry scale production of two-dimensional (2D) materials for a wide range of application such as printable electronics, catalysis and energy storage. However, many impactful 2D materials with potentials in quantum technologies can only be studied in lab settings due to their air-sensitivity, and loss of physical performance after chemical processing. Here, we report a simple chemical exfoliation method to create a stable, aqueous, surfactant-free, superconducting ink containing phase-pure 1T'-WS$_2$ monolayers that are isotructural to the air-sensitive topological insulator 1T'-WTe$_2$. We demonstrate that thin films can be cast on both hard and flexible substrates. The printed film is metallic at room temperature and superconducting below 7.3 K, shows strong anisotropic unconventional superconducting behavior with an in-plane and out-of-plane upper critical magnetic field of 30.1 T and 5.3 T, has a critical current of 44 mA, and is stable at ambient conditions for at least 30 days. Our results show that chemical processing can provide an engineering solution, which makes non-trivial 2D materials that used to be only studied in laboratories commercially accessible.
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Submitted 3 June, 2022;
originally announced June 2022.
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Humble planar defects in SiGe nanopillars
Authors:
Hongbin Yang,
Shang Ren,
Sobhit Singh,
Emily M. Turner,
Kevin S. Jones,
Philip E. Batson,
David Vanderbilt,
Eric Garfunkel
Abstract:
We report a new \{001\} planar defect found in SiGe nanopillars. The defect structure, determined by atomic resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigated several possible variants of the Humble structure using first principles calculations and found that the one lowest in energy was also in best agreement with the STEM images. The pillar…
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We report a new \{001\} planar defect found in SiGe nanopillars. The defect structure, determined by atomic resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigated several possible variants of the Humble structure using first principles calculations and found that the one lowest in energy was also in best agreement with the STEM images. The pillar composition has been analyzed with electron energy loss spectroscopy, which hints at how the defect is formed. Our results show that the structure and formation process of defects in nanostructured group IV semiconductors can be different from their bulk counterparts.
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Submitted 7 November, 2021;
originally announced November 2021.
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Low-loss tunable infrared plasmons in the high-mobility perovskite (Ba,La)SnO$_3$
Authors:
Hongbin Yang,
Andrea Konečná,
Xianghan Xu,
Sang-Wook Cheong,
Eric Garfunkel,
F. Javier García de Abajo,
Philip E. Batson
Abstract:
BaSnO$_3$ exhibits the highest carrier mobility among perovskite oxides, making it ideal for oxide electronics. Collective charge carrier oscillations, plasmons, are expected to arise in this material, thus providing a tool to control the nanoscale optical field for optoelectronics applications. Here, we demonstrate the existence of relatively long-lived plasmons supported by high-mobility charge…
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BaSnO$_3$ exhibits the highest carrier mobility among perovskite oxides, making it ideal for oxide electronics. Collective charge carrier oscillations, plasmons, are expected to arise in this material, thus providing a tool to control the nanoscale optical field for optoelectronics applications. Here, we demonstrate the existence of relatively long-lived plasmons supported by high-mobility charge carriers in La-doped BaSnO$_3$ (BLSO). By exploiting the high spatial and energy resolution of electron energy-loss spectroscopy with a focused beam in a scanning transmission electron microscope, we systematically investigate the dispersion, confinement ratio, and damping of infrared localized surface plasmons (LSP) in BLSO nanoparticles. We find that the LSPs in BLSO are highly spatially confined compared to those sustained by noble metals and have relatively low loss and high quality factor compared to other doped oxides. Further analysis clarifies the relation between plasmon damping and carrier mobility in BLSO. Our results support the use of nanostructured degenerate semiconductors for plasmonic applications in the infrared region and establish a relevant alternative to more traditional plasmonic materials.
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Submitted 7 November, 2021;
originally announced November 2021.
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Polarization selectivity of aloof-beam electron energy-loss spectroscopy in one-dimensional ZnO nanorods
Authors:
Yao-Wen Yeh,
Sobhit Singh,
David Vanderbilt,
Philip E. Batson
Abstract:
Orientation dependent electronic properties of wurtzite zinc oxide nanorods are characterized by aloof beam electron energy-loss spectroscopy (EELS) carried out in a scanning transmission electron microscope (STEM). The two key crystal orientation differentiating transitions specific to the in-plane (13.0 eV) and out-of-plane (11.2 eV) directions with respect to the wurtzite structure are examined…
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Orientation dependent electronic properties of wurtzite zinc oxide nanorods are characterized by aloof beam electron energy-loss spectroscopy (EELS) carried out in a scanning transmission electron microscope (STEM). The two key crystal orientation differentiating transitions specific to the in-plane (13.0 eV) and out-of-plane (11.2 eV) directions with respect to the wurtzite structure are examined by first principles density-functional theory calculations. We note some degree of orientation dependence at the onset of direct band gap transition near 3.4 eV. We demonstrate that good polarization selectivity can be achieved by placing the electron probe at different locations around the specimen with increasing impact parameter while keeping the beam-specimen orientation fixed. The observed results are qualitatively elucidated in terms of the perpendicular electric fields generated by the fast electron (60 kV) used in the microscope. The fact that good polarization selectivity can be achieved by aloof beam EELS without the requirement of sample reorientation is an attractive aspect from the characterization method point of view in the STEM-EELS community.
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Submitted 5 October, 2021;
originally announced October 2021.
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Observation of Pines' Demon in Sr$_2$RuO$_4$
Authors:
A. A. Husain,
E. W. Huang,
M. Mitrano,
M. S. Rak,
S. I. Rubeck,
X. Guo,
H. Yang,
C. Sow,
Y. Maeno,
B. Uchoa,
T. C. Chiang,
P. E. Batson,
P. W. Phillips,
P. Abbamonte
Abstract:
The characteristic excitation of a metal is its plasmon, which is a quantized collective oscillation of its electron density. In 1956, David Pines predicted that a distinct type of plasmon, dubbed a "demon," could exist in three-dimensional metals containing more than one species of charge carrier. Consisting of out-of-phase movement of electrons in different bands, demons are acoustic, electrical…
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The characteristic excitation of a metal is its plasmon, which is a quantized collective oscillation of its electron density. In 1956, David Pines predicted that a distinct type of plasmon, dubbed a "demon," could exist in three-dimensional metals containing more than one species of charge carrier. Consisting of out-of-phase movement of electrons in different bands, demons are acoustic, electrically neutral, and do not couple to light, so have never been detected in an equilibrium, three-dimensional metal. Nevertheless, demons are believed to be critical for diverse phenomena including phase transitions in mixed-valence semimetals, optical properties of metal nanoparticles, "soundarons" in Weyl semimetals, and high temperature superconductivity in, for example, metal hydrides. Here, we present evidence for a demon in Sr$_2$RuO$_4$ from momentum-resolved electron energy-loss spectroscopy (M-EELS). Formed of electrons in the $β$ and $γ$ bands, the demon is gapless with a room temperature velocity $v=1.065 \pm 0.12 \times 10^5$ m/s and critical momentum $q_c=0.08$ reciprocal lattice units. Its spectral weight violates low-energy partial sum rules, affirming its neutral character. Our study confirms a 66-year old prediction and suggests that demons may be a pervasive feature of multiband metals.
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Submitted 27 May, 2022; v1 submitted 13 July, 2020;
originally announced July 2020.
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Truncated nonlinear interferometry for quantum enhanced atomic force microscopy
Authors:
R. C. Pooser,
N. Savino,
E. Batson,
J. L. Beckey,
J. Garcia,
B. J. Lawrie
Abstract:
Nonlinear interferometers that replace beamsplitters in Mach-Zehnder interferometers with nonlinear amplifiers for quantum-enhanced phase measurements have drawn increasing interest in recent years, but practical quantum sensors based on nonlinear interferometry remain an outstanding challenge. Here, we demonstrate the first practical application of nonlinear interferometry by measuring the displa…
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Nonlinear interferometers that replace beamsplitters in Mach-Zehnder interferometers with nonlinear amplifiers for quantum-enhanced phase measurements have drawn increasing interest in recent years, but practical quantum sensors based on nonlinear interferometry remain an outstanding challenge. Here, we demonstrate the first practical application of nonlinear interferometry by measuring the displacement of an atomic force microscope microcantilever with quantum noise reduction of up to 3~dB below the standard quantum limit, corresponding to a quantum-enhanced measurement of beam displacement of $\mathrm{1.7~fm/\sqrt{Hz}}$. Further, we show how to minimize photon backaction noise while taking advantage of quantum noise reduction by transducing the cantilever displacement signal with a weak squeezed state while using dual homodyne detection with a higher power local oscillator. This approach offers a path toward quantum-enhanced broadband, high-speed scanning probe microscopy.
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Submitted 22 December, 2019;
originally announced December 2019.